CN112126972A - Seed crystal laying method, production method of ingot casting monocrystalline silicon and ingot casting monocrystalline silicon - Google Patents
Seed crystal laying method, production method of ingot casting monocrystalline silicon and ingot casting monocrystalline silicon Download PDFInfo
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- CN112126972A CN112126972A CN202010872732.5A CN202010872732A CN112126972A CN 112126972 A CN112126972 A CN 112126972A CN 202010872732 A CN202010872732 A CN 202010872732A CN 112126972 A CN112126972 A CN 112126972A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The embodiment of the application provides a seed crystal laying method, which comprises the following steps: providing a crucible, and paving a seed crystal layer at the bottom of the crucible, wherein the seed crystal layer is formed by splicing a plurality of first seed crystals and a plurality of second seed crystals at intervals, one second seed crystal is arranged between any two adjacent first seed crystals, one first seed crystal is arranged between any two adjacent second seed crystals, the growth surfaces of the first seed crystals and the second seed crystals have the same crystal orientation, and the side crystal orientations are different; the first seed crystal and the second seed crystal are both heavily-doped single crystals, and the doping elements of the heavily-doped single crystals comprise at least one seed crystal laying method of boron, gallium, phosphorus and germanium. A seed crystal preparation method for growing high-quality ingot single crystal. The seed crystal layer laid in the seed crystal laying method can inhibit dislocation generated by thermal shock and obviously reduce dislocation sources generated in the seeding process, and is favorable for producing ingot casting monocrystalline silicon with extremely low dislocation. The application also provides a production method of the ingot monocrystalline silicon and the ingot monocrystalline silicon.
Description
Technical Field
The application relates to the technical field of polycrystalline silicon ingots, in particular to a seed crystal laying method, an ingot monocrystalline silicon production method and ingot monocrystalline silicon.
Background
The crystal silicon wafer has important application prospect in the technical field of photovoltaic power generation, and monocrystalline silicon and quasi-monocrystalline silicon have the advantage of high efficiency. The existing monocrystalline silicon obtained by the Czochralski method has the characteristics of low defect density and high photoelectric conversion efficiency, but the Czochralski method has the defects of low yield, high cost and the like, and is opposite to the market development requirement on low cost. The ingot single crystal technology has the advantage of low cost, but the obtained ingot single crystal is easy to generate dislocation sources in the seeding process, so that subsequent crystal dislocation proliferation is caused, or polycrystalline grain boundaries are formed; so that the area ratio of the single crystal is reduced, and a large number of defects are formed on the silicon wafer, which seriously affects the photoelectric conversion efficiency and the service life of the solar cell.
Disclosure of Invention
In view of this, the embodiments of the present application provide a seed crystal laying method, a method for producing ingot single crystal silicon, and ingot single crystal silicon, where the seed crystal layer laid in the seed crystal laying method can suppress dislocations generated by thermal shock and significantly reduce dislocation sources generated in a seeding process, and is beneficial to producing ingot single crystal silicon with extremely low dislocations.
In a first aspect, the present application provides a seed crystal laying method, comprising:
providing a crucible, and paving a seed crystal layer at the bottom of the crucible, wherein the seed crystal layer is formed by splicing a plurality of first seed crystals and a plurality of second seed crystals at intervals, one second seed crystal is arranged between any two adjacent first seed crystals, one first seed crystal is arranged between any two adjacent second seed crystals, the growth surfaces of the first seed crystals and the second seed crystals have the same crystal orientation, and the side crystal orientations of the first seed crystals and the second seed crystals are different; the first seed crystal and the second seed crystal are both heavily doped single crystals, and the doping elements of the heavily doped single crystals comprise at least one of boron, gallium, phosphorus and germanium.
In an embodiment of the present application, the first seed crystal and the second seed crystal have a resistivity of 0.3 to 0.5 ohm-cm.
In the embodiment of the application, the included angle of the side crystal directions of the first seed crystal and the second seed crystal is 5-90 degrees.
In the embodiment of the present application, the atomic number concentration of the doping element in the heavily doped single crystal is 1 × 1018-1×1019atoms/cm3。
In the embodiment of the application, the growth surface crystal directions of the first seed crystal and the second seed crystal are <100>, <011> or <111 >.
In the embodiment of the application, the thickness of the seed crystal layer is 10-30 mm.
In a second aspect, the present application provides a method for producing ingot-cast single-crystal silicon, comprising:
forming a seed layer in a crucible according to a seed crystal placement method of the first aspect of the present application;
filling a silicon material above the seed crystal layer, and heating to melt the silicon material in the crucible into a silicon melt; when the seed crystal layer is not completely melted, adjusting a thermal field to form an overcooled state, and enabling the silicon melt to start crystal growth on the basis of the seed crystal layer;
and after all the silicon melt is crystallized, annealing and cooling to obtain ingot casting single crystal silicon.
In the embodiment of the application, in the process of filling the silicon material above the seed crystal layer, the method further comprises the step of adding a boron master alloy, wherein the concentration range of the boron master alloy is 1 x 1016-1×1017atoms/cm3。
In the embodiment of the present application, the temperature during the crystal growth process is 1410-.
In a third aspect, the present application also provides an ingot-shaped single-crystal silicon produced by the method for producing an ingot-shaped single-crystal silicon according to the second aspect of the present application.
The beneficial effect of this application includes:
1. according to the seed crystal laying method, the seed crystal layer formed by splicing the first seed crystal and the second seed crystal which are heavily doped with single crystal materials at intervals is laid at the bottom of the crucible, and the adjacent first seed crystal and the adjacent second seed crystal are arranged in the same growth surface crystal orientation and different side crystal orientations, so that a seed crystal layer which can obviously reduce dislocation sources in the ingot casting process and is beneficial to producing extremely-low dislocation ingot casting single crystal silicon is formed.
2. According to the production method of the ingot monocrystalline silicon, the seed crystal layer paved is utilized, and the ingot monocrystalline silicon is prepared by adopting a semi-melting method; the whole ingot casting process does not need a necking technology, the ingot casting method is simple and low in cost, the dislocation of the produced ingot casting monocrystalline silicon is low, the yield is high, and the quality of the ingot casting monocrystalline silicon is obviously improved. The ingot monocrystalline silicon produced by the production method has few silicon chip defects, high photoelectric conversion efficiency in solar cell application and long service life.
Advantages of the present application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the embodiments of the present application.
Drawings
In order to more clearly explain the content of the present application, the following detailed description is given in conjunction with the accompanying drawings and specific embodiments.
FIG. 1 is a schematic cross-sectional view of a crucible during a seed crystal deposition process according to an embodiment of the present disclosure;
FIG. 2 is a schematic top view of a seed layer in a crucible according to an embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of a crucible in the production process of ingot single crystal silicon according to an embodiment of the present application;
FIG. 4 is a schematic top view of a seed layer in a crucible according to example 1 of the present application;
FIG. 5 is a minority carrier lifetime distribution diagram of an ingot of single crystal silicon provided by an embodiment of the present application;
FIG. 6 is a graph illustrating minority carrier lifetime distribution of a conventional bulk silicon according to an embodiment of the present invention.
Detailed Description
While the following is a preferred embodiment of the embodiments of the present application, it should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the embodiments of the present application, and such improvements and modifications are also considered to be within the scope of the embodiments of the present application.
The terms "comprising" and "having," and any variations thereof, as appearing in the specification, claims and drawings of this application, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Unless otherwise specified, the raw materials and other chemical agents used in the examples of the present application are commercially available.
Referring to fig. 1 and 2 together, an embodiment of the present application provides a seed crystal laying method, including:
providing a crucible 10, and laying a seed crystal layer 20 on the bottom 11 of the crucible 10, wherein the seed crystal layer 20 is formed by splicing a plurality of first seed crystals 21 and a plurality of second seed crystals 22 at intervals, one second seed crystal 22 is arranged between any two adjacent first seed crystals 21, one first seed crystal 21 is arranged between any two adjacent second seed crystals 22, the growth surfaces of the first seed crystals 21 and the second seed crystals 22 have the same crystal direction, and the side crystal directions are different; the first seed crystal 21 and the second seed crystal 22 are each a heavily doped single crystal, and the doping element of the heavily doped single crystal includes at least one of boron (B), gallium (Ga), phosphorus (P), and germanium (Ge).
In the embodiment of the present application, the spaced-apart connection of the plurality of first seed crystals 21 and the plurality of second seed crystals 22 means that the second seed crystals 22 are disposed at adjacent positions of the first seed crystals 21, and the first seed crystals 21 are disposed at adjacent positions of the second seed crystals 22. Optionally, a cross-sectional shape of the first seed crystal and the second seed crystal in a direction parallel to the bottom of the crucible is at least one of a rectangle, a triangle, and a regular polygon, wherein the regular polygon refers to a regular polygon having 5-8 sides. Further, optionally, the cross-sectional shapes of the first seed crystal and the second seed crystal in a direction parallel to the bottom of the crucible are square or squared. When the cross section of the first seed crystal in the direction parallel to the bottom of the crucible is square, the cross section of the second seed crystal is also square; and the adjacent positions of the four edges of the first seed crystal are all second seed crystals, and the adjacent positions of the four edges of the second seed crystals are all first seed crystals.
In the present embodiment, the plurality of first seed crystals and the plurality of second polysilicon pieces in the seed layer are approximately seamlessly spliced, see fig. 2. In the seed crystal layer, no through gap exists in the direction vertical to the bottom of the crucible, so that the influence of the gap on the quality of a subsequent cast ingot product is reduced. The distance between any adjacent first seed crystal and any adjacent second seed crystal can be adjusted based on actual requirements, and the distance can at least meet the requirement that the thermal expansion extrusion between the first seed crystal and the second seed crystal can be prevented at high temperature. In one embodiment, the distance between any adjacent first seed crystal and any adjacent second seed crystal is 0.1-0.2 mm. In another embodiment, the spacing between any adjacent first seed crystal and second seed crystal is 0.15-0.2 mm.
In the embodiment of the application, the first seed crystal and the second seed crystal are low-resistance seed crystals and have low-range resistivity. The seed crystal layer spliced by the first seed crystal and the second seed crystal with low resistivity is beneficial to further reducing dislocation sources in the subsequent ingot casting process and is beneficial to producing ingot casting monocrystalline silicon with superior quality. Optionally, the resistivity of the first and second seed crystals is 0.3-0.5 ohm-cm. In one embodiment, the resistivity of the first and second seed crystals is 0.4 to 0.5 ohm-cm. Here, ohm-cm can also be expressed in Ω · cm.
In the embodiment of the application, the crystal orientation of the growth surfaces of the first seed crystal and the second seed crystal refers to the crystal orientation of the surface of one side of the first seed crystal and the second seed crystal, which is far away from the bottom of the crucible. Optionally, the growth surface crystal orientation of the first seed crystal and the second seed crystal is <100>, <011> or <111 >. Further, optionally, the growth face crystal orientation of the first seed crystal and the second seed crystal is <100 >.
In the embodiment of the application, the included angle of the side crystal directions of the first seed crystal and the second seed crystal is 5-90 degrees. In one embodiment, the side crystal orientation included angle of the first seed crystal and the second seed crystal is 30-90 degrees. In another embodiment, the side crystal orientation angle of the first seed crystal and the second seed crystal is 45-90 degrees. In a third embodiment, the side crystal orientation included angle of the first seed crystal and the second seed crystal is 10-40 degrees. In a fourth embodiment, the side crystal orientation included angle of the first seed crystal and the second seed crystal is 60-85 degrees. In this application, the side crystal orientation included angle of the first seed crystal and the second seed crystal may specifically be 5 °, 8 °, 10 °, 15 °, 20 °, 25 °, 30 °, 35 °, 40 °, 45 °, 50 °, 60 °, 65 °, 70 °, 75 °, 80 °, 85 °, or 90 °. The side crystal orientations of the first seed crystal and the second seed crystal are arranged to form an included angle, the crystal orientations of the growth surfaces of the first seed crystal and the second seed crystal are unified, the surface of the seed crystal layer formed after splicing can be in the unified crystal orientation, the adjacent first seed crystal and the second seed crystal are in different side crystal orientation splicing states, dislocation sources in the continuous ingot growing process can be reduced, and ingot single crystal silicon with few dislocations grows.
In the embodiment of the present application, the doping element of the heavily doped single crystal is boron, gallium, phosphorus or germanium. For example, the doping element of the heavily doped single crystal is boron, or gallium, or phosphorus, or germanium. In the present application, the doping elements of the heavily doped single crystal may also be at least two of boron, gallium, phosphorus and germanium. Doping in first and second seed crystals as described hereinThe impurity elements can greatly reduce the dislocation rate of the ingot single crystal silicon grown subsequently, and the seed crystal layer spliced by the first seed crystal and the second seed crystal containing the doping elements can be used for growing the ingot single crystal silicon, so that the necking technology can be omitted, and the ingot casting cost is greatly reduced. Optionally, the doping element has an atomic number concentration of 1 × 10 in the heavily doped single crystal18-1×1019atoms/cm3. In one embodiment, the dopant element has an atomic number concentration of 5 × 10 in the heavily doped single crystal18-1×1019atoms/cm3. For example, the doping element has an atomic number concentration of 1 × 10 in the heavily doped single crystal18atoms/cm3、3×1018atoms/cm3、5×1018atoms/cm3、7×1018atoms/cm3、9×1018atoms/cm3、1×1019atoms/cm3。
In the embodiment of the application, the thickness of the seed crystal layer is 10-30 mm. In one embodiment, the seed layer has a thickness of 15 to 20 mm. For example, the seed layer may have a thickness of 10mm, or 15mm, or 16mm, or 18mm, or 20mm, or 25mm, or 30 mm. The seed crystal layer with a certain thickness range is beneficial to regulating the temperature during the subsequent production of the ingot single crystal silicon and the supercooling state during the melting stage of selecting a proper seed crystal layer, so that the ingot single crystal silicon with less dislocation and superior quality can be grown.
In the embodiments of the present application, the crucible may be, but is not limited to, an existing crucible product. For example, the crucible may be a quartz crucible, a graphite crucible, or a ceramic crucible. Alternatively, the bottom and sidewall surfaces of the crucible may be provided with, but are not limited to, a silicon nitride coating. By adjusting the shape, the number and the size of the first seed crystal and the second seed crystal, the seed crystal laying method can be suitable for crucibles with various specifications. For crucibles with different dimensions, the requirements of the seed crystal layer on the first seed crystal and the second seed crystal are partially different, and the specific dimension requirements of the first seed crystal and the second seed crystal can be adjusted based on actual requirements.
According to the seed crystal laying method, the seed crystal layer formed by splicing the first seed crystal and the second seed crystal which are heavily doped with single crystal materials at intervals is laid at the bottom of the crucible, and the adjacent first seed crystal and the adjacent second seed crystal are arranged in the same growth surface crystal orientation and different side crystal orientations, so that a seed crystal layer which can obviously reduce dislocation sources in the ingot casting process and is beneficial to producing extremely-low dislocation ingot casting single crystal silicon is formed.
An embodiment of the present application further provides a method for producing ingot-shaped single crystal silicon, referring to fig. 3, including:
s101, providing a crucible 10, and laying a seed crystal layer 20 on the bottom 11 of the crucible 10, wherein the seed crystal layer 20 is formed by splicing a plurality of first seed crystals 21 and a plurality of second seed crystals 22 at intervals, one second seed crystal 22 is arranged between any two adjacent first seed crystals 21, one first seed crystal 21 is arranged between any two adjacent second seed crystals 22, the growth surfaces of the first seed crystals 21 and the second seed crystals 22 have the same crystal orientation, and the side crystal orientations are different; the first seed crystal 21 and the second seed crystal 22 are both heavily doped single crystals, and the doping elements of the heavily doped single crystals comprise at least one of boron (B), gallium (Ga), phosphorus (P) and germanium (Ge);
s102, filling a silicon material 30 above the seed crystal layer 20, and heating to melt the silicon material 30 in the crucible 10 into a silicon melt; when the seed crystal layer 20 is not completely melted, adjusting a thermal field to form a supercooled state, and enabling the silicon melt to start crystal growth on the basis of the seed crystal layer 20;
and S103, after all the silicon melt is crystallized, annealing and cooling to obtain ingot single crystal silicon.
Alternatively, in S101, a seed layer may be formed on the bottom of the crucible by the seed crystal deposition method described above. The crucible and the seed layer may be further defined as specifically defined in the foregoing, and are not described in detail in this embodiment.
Optionally, the specific step of S102 may include, but is not limited to: loading, heating, melting and growing crystal. For example, in the steps of charging, heating, melting and crystal growth:
charging: selecting a silicon material, loading the silicon material into a crucible with a seed crystal layer laid, and vacuumizing the crucible;
heating: after the vacuum pumping is finished, entering a heating stage, heating the silicon material to be close to the melting temperature, and introducing argon to form argon low pressure in the furnace body;
melting: under the low pressure of argon, firstly, keeping the temperature within the range of 1450-; when the seeding layer in the seed crystal layer is not completely melted, gradually reducing the temperature to below 1450 ℃ and keeping the temperature;
crystal growth: and under the low pressure of argon, opening the heat insulation cage to cool the heat exchange platform, so that the silicon melt in the crucible is directionally solidified from the bottom to the top along the temperature gradient. Optionally, the temperature during the crystal growth process is 1410-1440 ℃. Further, the temperature in the crystal growth process is 1410 ℃, 1420 ℃, 1430 ℃ or 1440 ℃.
The production method of the ingot monocrystalline silicon is carried out in an ingot furnace. And in the charging process, the ingot furnace can be subjected to leakage detection and the like. Optionally, during the process of filling the silicon material above the seed crystal layer, adding a boron master alloy, wherein the concentration range of the boron master alloy is 1 x 1016-1×1017atoms/cm3. In one embodiment, the boron master alloy has an atomic number concentration of 1 × 10 in the ingot single crystal silicon obtained by the production16-1×1017atoms/cm3. According to the growing method, the boron master alloy added into the silicon material can keep the resistivity range of the ingot monocrystalline silicon obtained by production within 1-1.5 omega cm, and the quality of the ingot monocrystalline silicon is improved.
Optionally, in S103, the internal thermal stress in the generated silicon ingot can be eliminated, but not limited to, through the annealing and cooling step, and the seed crystal layer formed by splicing the first seed crystal and the second seed crystal can also greatly eliminate the internal thermal stress and the dislocation source, which is beneficial to obtaining ingot single crystal with better quality.
According to the production method of the ingot monocrystalline silicon, the seed crystal layer paved is utilized, and the ingot monocrystalline silicon is prepared by adopting a semi-melting method; the whole ingot casting process does not need a necking technology, the ingot casting method is simple and low in cost, the dislocation of the produced ingot casting monocrystalline silicon is low, the yield is high, and the quality of the ingot casting monocrystalline silicon is obviously improved. The ingot monocrystalline silicon produced by the production method has few silicon chip defects, high photoelectric conversion efficiency in solar cell application and long service life.
Embodiment 1 a method for producing ingot-shaped single-crystal silicon, comprising:
providing a ceramic crucible with the specification of G6, wherein the inner diameter of the crucible is 1000mm by 1000 mm; spraying silicon nitride coating on the bottom and side wall of the crucible, and spreading a plurality of seed crystals A and B (see figure 4) with the size of about 158mm by 20mm on the bottom area of the bottom crucible according to a 7 x 7 mode, wherein the seed crystal layer with the thickness of 20mm is laid on the bottom area of the bottom crucible; wherein, the seed crystal A and the seed crystal B are square seed crystals obtained by cutting a heavy monocrystalline silicon rod, and the resistivity range is 0.3-0.5 ohm-cm;
then laying 400-plus 1000kg silicon material on the seed crystal layer, adding boron master alloy, sending the ceramic crucible containing the silicon material into an ingot furnace, evacuating and detecting leakage of the ingot furnace, operating the ingot furnace to heat the temperature to 1450-plus 1550 ℃ so as to ensure that the silicon material is melted and the height of a seed crystal reserved layer is ensured; and then reducing the temperature of the ingot furnace, controlling the crystal growth temperature to be between 1410 and 1440 ℃, simultaneously keeping the speed of 0.3-1cm/h, opening a heat insulation cage of the ingot furnace, starting crystal growth of the molten silicon material from a seed crystal layer at the bottom, maintaining directional solidification until the crystal growth is finished, and finally completing ingot casting through annealing, cooling and the like to obtain ingot casting monocrystalline silicon.
Effects of the embodiment
The ingot single crystal silicon produced by the method of example 1 and the silicon ingot prepared by laying seed crystal layers on common single crystal seed crystals and adjusting the same ingot are compared, and the minority carrier lifetime is tested after the two products are respectively cut into silicon blocks. Referring to fig. 5 and fig. 6, wherein fig. 5 is a minority carrier lifetime map of an ingot single crystal silicon block produced by the method of example 1 of the present application, and fig. 6 is a minority carrier lifetime map of a silicon block prepared by laying a seed layer on a common single crystal seed crystal.
The comparison shows that the minority carrier spectrum of the polycrystalline silicon block prepared by the preparation method in the embodiment 1 is cleaner, so that the quality of the polycrystalline silicon ingot prepared by the preparation method is more excellent, and the cast ingot monocrystalline silicon produced by the embodiment is low in dislocation and high in yield.
It should be noted that, according to the disclosure and the explanation of the above description, the person skilled in the art to which the present application belongs may make variations and modifications to the above embodiments. Therefore, the present application is not limited to the specific embodiments disclosed and described above, and some equivalent modifications and variations of the present application should be covered by the protection scope of the claims of the present application. In addition, although specific terms are used herein, they are used in a descriptive sense only and not for purposes of limitation.
Claims (10)
1. A seed crystal laying method is characterized by comprising the following steps:
providing a crucible, and paving a seed crystal layer at the bottom of the crucible, wherein the seed crystal layer is formed by splicing a plurality of first seed crystals and a plurality of second seed crystals at intervals, one second seed crystal is arranged between any two adjacent first seed crystals, one first seed crystal is arranged between any two adjacent second seed crystals, the growth surfaces of the first seed crystals and the second seed crystals have the same crystal orientation, and the side crystal orientations of the first seed crystals and the second seed crystals are different; the first seed crystal and the second seed crystal are both heavily doped single crystals, and the doping elements of the heavily doped single crystals comprise at least one of boron, gallium, phosphorus and germanium.
2. A seed placement method as claimed in claim 1, wherein the resistivity of said first seed and said second seed is 0.3-0.5 ohm-cm.
3. A seed crystal placement method as defined in claim 1, wherein the angle of the side crystal orientation of said first seed crystal and said second seed crystal is 5 to 90 °.
4. A seed crystal laying method as defined in claim 1, wherein the atomic number concentration of said doping element in said heavily doped single crystal is 1 |)1018-1×1019atoms/cm3。
5. The seed crystal laying method according to claim 1, wherein the growth plane crystal orientation of the first seed crystal and the second seed crystal is <100>, <011> or <111 >.
6. A seed crystal placement method as claimed in any one of claims 1 to 5, wherein said seed layer has a thickness of 10 to 30 mm.
7. A method for producing ingot monocrystalline silicon, characterized by comprising:
forming a seed layer in the crucible by the seed crystal placement method as claimed in any one of claims 1 to 6;
filling a silicon material above the seed crystal layer, and heating to melt the silicon material in the crucible into a silicon melt; when the seed crystal layer is not completely melted, adjusting a thermal field to form an overcooled state, and enabling the silicon melt to start crystal growth on the basis of the seed crystal layer;
and after all the silicon melt is crystallized, annealing and cooling to obtain ingot casting single crystal silicon.
8. The method of claim 7, further comprising adding a boron master alloy during the filling of the silicon mass above the seed layer, the boron master alloy having a concentration in a range of 1 x 1016-1×1017atoms/cm3。
9. The method according to claim 7, wherein the temperature during the crystal growth is 1410-1440 ℃.
10. An ingot-shaped single-crystal silicon produced by the production method for ingot-shaped single-crystal silicon according to claims 7 to 9.
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