CN105603509B - A kind of class monocrystalline silicon production technique based on directional solidification ingot casting - Google Patents
A kind of class monocrystalline silicon production technique based on directional solidification ingot casting Download PDFInfo
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- CN105603509B CN105603509B CN201610159376.6A CN201610159376A CN105603509B CN 105603509 B CN105603509 B CN 105603509B CN 201610159376 A CN201610159376 A CN 201610159376A CN 105603509 B CN105603509 B CN 105603509B
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- seed crystal
- crystal blocks
- flat board
- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A kind of class monocrystalline silicon production technique based on directional solidification ingot casting, key step include：In flat crucible bottom seed crystal fragment；The flat board seed crystal blocks spliced are integrally put into crucible, make to leave uniform gap between flat board seed crystal blocks outward flange and crucible internal walls；Frame seed crystal blocks along the gap between crucible surrounding inwall insertion flat board seed crystal blocks outward flange and crucible internal walls and are pushed, the briquetting of frame seed crystal blocks is pushed down flat board seed crystal blocks；Silicon material is laid on seed crystal blocks；Crucible is put into ingot furnace and vacuumized；By the temperature control of melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal gradually melts since the face contacted with silicon liquid；Oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting.Using work of the present invention, Mosaic face gap can be well controlled, and improve monocrystalline area ratio；And due to the position-limiting action of frame seed crystal blocks, prevent seed crystal blocks are heated from tilting, improve ingot quality.
Description
Technical field
The present invention relates to the class monocrystalline silicon production technique based on directional solidification ingot casting, belong to silicon crystal manufacturing field.
Background technology
In recent years, monocrystalline silicon and polysilicon are widely used in the fields such as photovoltaic solar cell, liquid crystal display.Eka-silicon at present
The conventional manufacture method of monocrystalline is directional solidification method, and this method lays cuboid seed crystal, seed crystal rule row in flat crucible bottom
Row form inculating crystal layer.Silicon material is placed in flat crucible, is layed on inculating crystal layer.By the temperature control of melting stage, silicon material is treated
After melting, seed crystal gradually melts since the face contacted with silicon liquid, then it is oriented radiating and realize silicon ingot on unfused seed crystal
Oriented growth, obtain the crystal grain similar or the same to seed crystal.
Under the regularly arranged connecting method of cuboid seed crystal, during directional solidification method growth class monocrystalline, position is also easy to produce
Wrong source, and then cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Research has shown that crystal boundary causes monocrystalline area ratio
Declining, dislocation causes silicon chip to form the defects of a large amount of, and the photoelectric transformation efficiency reduction of solar cell, service life shorten, from
And influence the performance of photovoltaic device.
Therefore, the A of Chinese invention patent application CN 103060892 are disclosed, " a species monocrystalline silicon cast ingot seed crystal splices
Method ", the traditional vertical Mosaic face of seed crystal is changed to the Mosaic face with angle of inclination or radian.Using Mosaic face tangentially with putting down
The normal direction of bottom crucible bottom plane, the two misaligned seed crystal connecting method, position is reduced by changing the shape of seed crystal
Wrong source, or even reduce polycrystalline crystal boundary and produce, realize full monocrystalline, the few class crystal growth of dislocation source.And then reduce the position of silicon chip
Wrong defect, monocrystalline area ratio is improved, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, from
And improve the performance of photovoltaic device.
But inventor has found that the above method is still in existing defects by experiment.Although inclined-plane splicing construction is to a certain degree
On reduce the generation in gap, but slided due to flat inclined light and cause the seed crystal connecting method in seed crystal splicing and silicon material filling process
In, seed crystal splicing deformation may be caused because of pressure, so as to influence follow-up monocrystalline ingot quality, the splicing to seed crystal proposes very high
Technical requirements, process allowance degradation.Meanwhile the seed crystal expanded by heating for arrangement of being compacted in heating process, it may stick up
Rise, the splicing gap between seed crystal can become big, cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.
The content of the invention
It is an object of the invention to：The defects of overcoming above-mentioned prior art, propose a kind of class based on directional solidification ingot casting
Monocrystalline silicon production technique, monocrystalline ingot quality are higher.
In order to achieve the above object, a kind of class monocrystalline silicon production technique based on directional solidification ingot casting proposed by the present invention,
It is characterized in that step is as follows：
T1, flat crucible bottom lay seed crystal fragment；
T2, the flat board seed crystal blocks spliced are integrally put into crucible, made between flat board seed crystal blocks outward flange and crucible internal walls
Leave uniform gap；
T3, between frame seed crystal blocks are inserted between flat board seed crystal blocks outward flange and crucible internal walls along crucible surrounding inwall
Gap simultaneously pushes, and the briquetting of frame seed crystal blocks is pushed down flat board seed crystal blocks；
T4, silicon material is laid on seed crystal blocks；
T5, crucible is put into ingot furnace and vacuumized；
T6, the temperature control by the melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal is from the face contacted with silicon liquid
Start gradually fusing；
T7, oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting.
Further improve of the invention is：
1st, the frame seed crystal blocks are in inverted L shape, and frame seed crystal blocks upper end extends inwardly to form briquetting, for pushing down flat board seed
The periphery of crystal block.
2nd, the splicing construction of the flat board seed crystal blocks is one kind in notch, buckle structure, trapezium structure.
3rd, the flat board seed crystal blocks offer horizontal cylindrical hole, after the splicing of adjacent panels seed crystal blocks, the horizontal cylindrical hole
To spell shape growth bar shaped cylinder chamber, is less than in the cylinder chamber inserted with silicon rod, the gap of the silicon rod and cylindricality through-hole wall
0.5mm
4th, the silicon rod laterally drills through acquisition by rig on seed crystal blocks, drills through the brill left after silicon rod on seed crystal blocks
Hole is the cylindrical hole.
The frame seed crystal blocks of the present invention have the briquetting that can push down flat board seed crystal blocks, therefore when flat board seed crystal blocks are put into earthenware
Be fixed and can not rock after crucible, due to the squeezing action of frame seed crystal blocks, reduce flat board seed crystal blocks it is heated tilt can
Can, it is ensured that monocrystalline ingot quality.In addition, by frame seed crystal blocks, flat board seed crystal blocks can be positioned over crucible closer to horizontal
It is interior, laid a good foundation to improve ingot quality.
Relative to traditional class monocrystalline silicon cast ingot technique, special structured seed crystal blocks are used in present invention process so that casting
During ingot, Mosaic face gap can be well controlled, and improve monocrystalline area ratio；And due to frame seed crystal blocks
Position-limiting action, prevent seed crystal blocks are heated from tilting, improve ingot quality.In addition；Seed crystal joining method letter in casting ingot process of the present invention
Single, operating personnel are easily mastered, and joining quality can be effectively ensured, so that class monocrystalline silicon cast ingot technique energy of the present invention
It is enough industrially to realize that there is stronger practical value.
Brief description of the drawings
The present invention is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is the seed crystal blocks of embodiment one splicing schematic diagram.
Fig. 2 is the seed crystal blocks of embodiment two splicing schematic diagram.
Label is schematically as follows in figure：1- frame seed crystal blocks, 2- flat board seed crystal blocks, 3- silicon rods.
Embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Embodiment one
Fig. 1 is the seed crystal blocks of the embodiment of the present invention one splicing schematic diagram.As shown in figure 1, it is seed used in casting ingot process of the present invention
Crystal block splices schematic diagram.Seed crystal blocks include：For leaning against the frame seed crystal blocks 1 of crucible surrounding inwall, and it is described for being placed on
Frame seed crystal blocks surround some flat board seed crystal blocks 2 in region, have splicing construction, frame seed crystal between adjacent panels seed crystal blocks
1 piece is in inverted L shape, and the upper end of frame seed crystal blocks 1 extends inwardly to form briquetting, for pushing down the periphery of flat board seed crystal blocks.Flat board seed crystal
The splicing construction of block is one kind in notch, buckle structure, trapezium structure.
The technique of the present embodiment class monocrystalline silicon cast ingot, step are as follows：
T1, flat crucible bottom lay seed crystal fragment；
T2, the flat board seed crystal blocks spliced are integrally put into crucible, made between flat board seed crystal blocks outward flange and crucible internal walls
Leave uniform gap；
T3, between frame seed crystal blocks are inserted between flat board seed crystal blocks outward flange and crucible internal walls along crucible surrounding inwall
Gap simultaneously pushes, and the briquetting of frame seed crystal blocks is pushed down flat board seed crystal blocks；
T4, silicon material is laid on seed crystal blocks；
T5, crucible is put into ingot furnace and vacuumized；
T6, the temperature control by the melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal is from the face contacted with silicon liquid
Start gradually fusing；
T7, oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting.
Embodiment two
As shown in Fig. 2 the flat board seed crystal blocks splicing construction of casting ingot process of the present invention is applicable to for another kind.Difference only exists
Difference on flat board seed crystal blocks splicing construction.Specifically：Flat board seed crystal blocks 2 offer horizontal cylindrical hole, adjacent panels seed
After crystal block splicing, horizontal cylindrical hole is to spell shape growth bar shaped cylinder chamber, and the cylinder chamber is interior inserted with silicon rod 3, and silicon rod leads to cylindricality
The gap of hole inwall is less than 0.5mm.Silicon rod 3 is that acquisition is laterally drilled through on seed crystal blocks by rig, is drilled through after silicon rod in seed
The drilling left on crystal block is cylindrical hole.
Accordingly, in the T2 of casting ingot process, the method for splicing flat board seed crystal blocks is also required to make adaptation change.Casting ingot process
Remaining step is constant.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domains of application claims.
Claims (4)
1. a kind of class monocrystalline silicon production technique based on directional solidification ingot casting, it is characterised in that step is as follows：
T1, flat crucible bottom lay seed crystal fragment；
T2, the flat board seed crystal blocks spliced are integrally put into crucible, make to leave between flat board seed crystal blocks outward flange and crucible internal walls
Uniform gap；
T3, the gap for inserting frame seed crystal blocks between flat board seed crystal blocks outward flange and crucible internal walls along crucible surrounding inwall are simultaneously
Push, the briquetting of frame seed crystal blocks is pushed down flat board seed crystal blocks；
T4, silicon material is laid on seed crystal blocks；
T5, crucible is put into ingot furnace and vacuumized；
T6, the temperature control by the melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal is since the face contacted with silicon liquid
Gradually fusing；
T7, oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting;
The frame seed crystal blocks are in inverted L shape, and frame seed crystal blocks upper end extends inwardly to form briquetting, for pushing down flat board seed crystal blocks
Periphery.
2. the class monocrystalline silicon production technique based on directional solidification ingot casting according to claim 1, it is characterised in that：The flat board
The splicing construction of seed crystal blocks is one kind in notch, buckle structure, trapezium structure.
3. the class monocrystalline silicon production technique based on directional solidification ingot casting according to claim 1, it is characterised in that：The flat board
Seed crystal blocks offer horizontal cylindrical hole, and after the splicing of adjacent panels seed crystal blocks, the horizontal cylindrical hole is to spell shape growth bar shaped cylindricality
Chamber, the cylinder chamber is interior to be less than 0.5mm inserted with silicon rod, the gap of the silicon rod and cylindricality through-hole wall.
4. the class monocrystalline silicon production technique based on directional solidification ingot casting according to claim 3, it is characterised in that：The silicon rod
Acquisition is laterally drilled through on seed crystal blocks by rig, it is the cylindrical hole to drill through the drilling left after silicon rod on seed crystal blocks.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159376.6A CN105603509B (en) | 2016-03-18 | 2016-03-18 | A kind of class monocrystalline silicon production technique based on directional solidification ingot casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610159376.6A CN105603509B (en) | 2016-03-18 | 2016-03-18 | A kind of class monocrystalline silicon production technique based on directional solidification ingot casting |
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| Publication Number | Publication Date |
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| CN105603509A CN105603509A (en) | 2016-05-25 |
| CN105603509B true CN105603509B (en) | 2018-03-30 |
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| CN201610159376.6A Expired - Fee Related CN105603509B (en) | 2016-03-18 | 2016-03-18 | A kind of class monocrystalline silicon production technique based on directional solidification ingot casting |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105755531B (en) * | 2016-03-18 | 2018-03-23 | 南通大学 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH11236291A (en) * | 1998-02-25 | 1999-08-31 | Mitsubishi Materials Corp | Crucible for producing silicon ingot having unidirectionally solidified polycrystalline structure |
| CN202265623U (en) * | 2011-06-27 | 2012-06-06 | 光为绿色新能源股份有限公司 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
| CN103060892B (en) * | 2012-12-26 | 2015-09-16 | 江西赛维Ldk太阳能高科技有限公司 | One kind monocrystalline silicon cast ingot seed crystal joining method |
| CN103952756B (en) * | 2014-05-08 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Adhesion joining method and the crucible for casting ingots of seed crystal for one kind monocrystalline silicon ingot casting |
| CN104131332A (en) * | 2014-08-06 | 2014-11-05 | 江西赛维Ldk太阳能高科技有限公司 | Paving method of seed crystals, pseudo-single crystal silicon wafer and preparation method of pseudo-single crystal silicon wafer |
| CN104775156A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing structure suitable for directional solidification ingot casting |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN105316758A (en) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | Seed crystal laying method and single crystal growth method through ingotting |
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| CB03 | Change of inventor or designer information |
Inventor after: Wang Qiang Inventor after: Xu Jianjun Inventor after: Wu Tingxi Inventor after: Chen Yun Inventor after: Deng Jie Inventor after: Liu Peisheng Inventor before: Deng Jie Inventor before: Zhou Haifeng Inventor before: Wang Qiang Inventor before: Huang Qianlu |
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Effective date of registration: 20180305 Address after: 226019 Jiangsu city of Nantong province sik Road No. 9 Institute of electronic and Information Engineering Nantong University Applicant after: Nantong University Applicant after: Nantong friend Tuo Amperex Technology Limited Address before: 226019 Jiangsu city of Nantong province sik Road No. 9 Institute of electronic and Information Engineering Nantong University Applicant before: Nantong University |
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Granted publication date: 20180330 Termination date: 20200318 |