CN105755531B - A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot - Google Patents
A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot Download PDFInfo
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- CN105755531B CN105755531B CN201610158974.1A CN201610158974A CN105755531B CN 105755531 B CN105755531 B CN 105755531B CN 201610158974 A CN201610158974 A CN 201610158974A CN 105755531 B CN105755531 B CN 105755531B
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- China
- Prior art keywords
- seed crystal
- crystal blocks
- flat board
- frame
- blocks
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot, including：For leaning against the frame seed crystal blocks of crucible surrounding inwall, some flat board seed crystal blocks in region are surrounded with for being placed on the frame seed crystal blocks, there is splicing construction, frame seed crystal blocks have the projection for being adapted to that flat board seed crystal blocks upper surface is pushed down from top between adjacent panels seed crystal blocks.Frame seed crystal blocks are fixed and can not rocked after being put into crucible with the projection that can push down flat board seed crystal blocks, therefore flat board seed crystal blocks, due to the squeezing action of frame seed crystal blocks, reduce the heated possibility tilted of flat board seed crystal blocks, it is ensured that monocrystalline ingot quality.In addition, by frame seed crystal blocks, flat board seed crystal blocks can be positioned in crucible closer to horizontal, can accomplish the flat board seed crystal blocks keep level being put into, and laid a good foundation to improve ingot quality.
Description
Technical field
The present invention relates to class monocrystalline silicon cast ingot seed crystal splicing construction, belong to silicon crystal manufacturing field.
Background technology
In recent years, silicon single crystal and polysilicon are widely used in the fields such as photovoltaic solar cell, liquid crystal display.Eka-silicon at present
The conventional manufacture method of monocrystalline is directional solidification method, and this method lays cuboid seed crystal, seed crystal rule row in flat crucible bottom
Row form inculating crystal layer.Silicon material is placed in flat crucible, is layed on inculating crystal layer.By the temperature control of melting stage, silicon material is treated
After melting, seed crystal gradually melts since the face contacted with silicon liquid, then it is oriented radiating and realize silicon ingot on unfused seed crystal
Oriented growth, obtain the crystal grain similar or the same to seed crystal.
Under the regularly arranged connecting method of cuboid seed crystal, during directional solidification method growth class monocrystalline, position is also easy to produce
Wrong source, and then cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Research has shown that crystal boundary causes monocrystalline area ratio
Declining, dislocation causes silicon chip to form the defects of a large amount of, and the photoelectric transformation efficiency reduction of solar cell, service life shorten, from
And influence the performance of photovoltaic device.
Therefore, the A of Chinese invention patent application CN 103060892 are disclosed, " a species monocrystalline silicon cast ingot seed crystal splices
Method ", the traditional vertical Mosaic face of seed crystal is changed to the Mosaic face with angle of inclination or radian.Using Mosaic face tangentially with putting down
The normal direction of bottom crucible bottom plane, the two misaligned seed crystal connecting method, position is reduced by changing the shape of seed crystal
Wrong source, or even reduce polycrystalline crystal boundary and produce, realize full monocrystalline, the few class crystal growth of dislocation source.And then reduce the position of silicon chip
Wrong defect, monocrystalline area ratio is improved, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, from
And improve the performance of photovoltaic device.
But inventor has found that the above method is still in existing defects by experiment.Although inclined-plane splicing construction is to a certain degree
On reduce the generation in gap, but slided due to flat inclined light and cause the seed crystal connecting method in seed crystal splicing and silicon material filling process
In, seed crystal splicing deformation may be caused because of pressure, so as to influence follow-up monocrystalline ingot quality, the splicing to seed crystal proposes very high
Technical requirements, process allowance degradation.Meanwhile the seed crystal expanded by heating for arrangement of being compacted in heating process, it may stick up
Rise, the splicing gap between seed crystal can become big, cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.
The content of the invention
It is an object of the invention to：The defects of overcoming above-mentioned prior art, propose a kind of suitable for class monocrystalline silicon cast ingot
Seed crystal blocks, it splices simply, and monocrystalline ingot quality is higher.
In order to achieve the above object, a kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot proposed by the present invention, including：For
Lean against the frame seed crystal blocks of crucible surrounding inwall, and some flat board seeds in region are surrounded for being placed on the frame seed crystal blocks
Crystal block, there is splicing construction between adjacent panels seed crystal blocks, the frame seed crystal blocks, which have, to be adapted to push down flat board seed crystal from top
The projection of block upper surface.
Further improve of the invention is：
1st, the splicing construction is one kind in notch, buckle structure, trapezium structure.
2nd, the lower end of the frame seed crystal blocks has tip, is layed in for inserting between the seed crystal fragment of crucible bottom.
3rd, the top of the projection has to the inclined-plane of crucible inner inclination, for guiding flat board seed crystal blocks above projection
It is included in underbump.
The technique that the present invention also proposes a species monocrystalline silicon cast ingot, it is characterised in that step is as follows：
T1, in flat crucible bottom seed crystal fragment；
T2, frame seed crystal blocks insert seed crystal fragment along crucible surrounding inwall；
T3, the flat board seed crystal blocks spliced are integrally put into crucible, and declined along frame seed crystal blocks, make frame seed crystal blocks
Push down flat board seed crystal blocks；
T4, silicon material is laid on seed crystal blocks；
T5, crucible is put into ingot furnace and vacuumized；
T6, the temperature control by the melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal is from the face contacted with silicon liquid
Start gradually fusing；
T7, oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting.
In casting ingot process, being put into the order of frame seed crystal blocks and flat board seed crystal blocks can exchange.I.e.：
Step T2 is replaced with：The flat board seed crystal blocks spliced are integrally put into crucible, make flat board seed crystal blocks outward flange and earthenware
Uniform gap is left between crucible inwall.
Step T3 is replaced with：Frame seed crystal blocks are inserted in flat board seed crystal blocks outward flange and crucible along crucible surrounding inwall
Gap between wall, and pushing makes frame seed crystal blocks insert seed crystal fragment, the projection of frame seed crystal blocks pushes down flat board seed crystal blocks.
The frame seed crystal blocks of the present invention have the projection that can push down flat board seed crystal blocks, therefore when flat board seed crystal blocks are put into earthenware
Be fixed and can not rock after crucible, due to the squeezing action of frame seed crystal blocks, reduce flat board seed crystal blocks it is heated tilt can
Can, it is ensured that monocrystalline ingot quality.In addition, by frame seed crystal blocks, flat board seed crystal blocks can be positioned over crucible closer to horizontal
Interior, because crucible bottom is difficult to ensure that absolute smooth, flatness can also be reduced after seed crystal fragment by laying, and frame seed crystal
Block can play a part of origin reference location, i.e., in the case of accurate in frame seed crystal blocks insertion position, the boss of frame seed crystal blocks
" horizontal datum " is formd, the flat board seed crystal blocks keep level that can accomplish to be put into by " horizontal datum ", to put forward
High ingot quality is laid a good foundation.
Relative to traditional class monocrystalline silicon cast ingot technique, special structured seed crystal blocks are used in present invention process so that casting
During ingot, Mosaic face gap can be well controlled, and improve monocrystalline area ratio；And due to frame seed crystal blocks
Position-limiting action, prevent seed crystal blocks are heated from tilting, improve ingot quality.In addition；Seed crystal joining method letter in casting ingot process of the present invention
Single, operating personnel are easily mastered, and joining quality can be effectively ensured, so that class monocrystalline silicon cast ingot technique energy of the present invention
It is enough industrially to realize that there is stronger practical value.
Brief description of the drawings
The present invention is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is seed crystal blocks splicing schematic diagram of the present invention.
Label is schematically as follows in figure：1- frame seed crystal blocks, 2- flat board seed crystal blocks.
Embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
As shown in figure 1, the present invention is applied to the seed crystal blocks of class monocrystalline silicon cast ingot, including：For leaning against crucible surrounding inwall
Frame seed crystal blocks 1, and surround some flat board seed crystal blocks 2 in region, adjacent panels for being placed on the frame seed crystal blocks
There is splicing construction, frame seed crystal blocks 1 have the projection for being adapted to that flat board seed crystal blocks upper surface is pushed down from top between seed crystal blocks；It is convex
The top of block has to the inclined-plane of crucible inner inclination, for guiding flat board seed crystal blocks to be included in underbump above projection；Side
The lower end of frame seed crystal blocks 1 has tip, is layed in for inserting between the seed crystal fragment of crucible bottom.The splicing of flat board seed crystal blocks
Structure is one kind in notch, buckle structure, trapezium structure.
The technique of class monocrystalline silicon cast ingot based on the structure, step are as follows：
T1, in flat crucible bottom seed crystal fragment；
T2, frame seed crystal blocks insert seed crystal fragment along crucible surrounding inwall；
T3, the flat board seed crystal blocks spliced are integrally put into crucible, and declined along frame seed crystal blocks, make frame seed crystal blocks
Push down flat board seed crystal blocks；
T4, silicon material is laid on seed crystal blocks；
T5, crucible is put into ingot furnace and vacuumized；
T6, the temperature control by the melting stage, silicon material melting is set to penetrate into splicing gap, seed crystal is from the face contacted with silicon liquid
Start gradually fusing；
T7, oriented radiating, the oriented growth of silicon ingot is realized on unfused seed crystal, obtain class monocrystalline ingot casting.
In casting ingot process, being put into the order of frame seed crystal blocks and flat board seed crystal blocks can exchange.I.e.：
Step T2 is replaced with：The flat board seed crystal blocks spliced are integrally put into crucible, make flat board seed crystal blocks outward flange and earthenware
Uniform gap is left between crucible inwall.
Step T3 is replaced with：Frame seed crystal blocks are inserted in flat board seed crystal blocks outward flange and crucible along crucible surrounding inwall
Gap between wall, and pushing makes frame seed crystal blocks insert seed crystal fragment, the projection of frame seed crystal blocks pushes down flat board seed crystal blocks.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domains of application claims.
Claims (4)
- A kind of 1. seed crystal blocks suitable for class monocrystalline silicon cast ingot, it is characterised in that including：For leaning against the side of crucible surrounding inwall Frame seed crystal, and some flat board seed crystals in region are surrounded for being placed on the frame seed crystal, have between adjacent panels seed crystal Splicing construction, the frame seed crystal have the projection for being adapted to that flat board seed crystal upper surface is pushed down from top.
- 2. the seed crystal blocks according to claim 1 suitable for class monocrystalline silicon cast ingot, it is characterised in that：The splicing construction is One kind in notch, buckle structure, trapezium structure.
- 3. the seed crystal blocks according to claim 1 suitable for class monocrystalline silicon cast ingot, it is characterised in that：The frame seed crystal Lower end has tip, is layed in for inserting between the seed crystal fragment of crucible bottom.
- 4. the seed crystal blocks according to claim 1 suitable for class monocrystalline silicon cast ingot, it is characterised in that：The top of the projection With to the inclined-plane of crucible inner inclination, for guiding flat board seed crystal to be included in underbump above projection.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610158974.1A CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
| DE212016000213.9U DE212016000213U1 (en) | 2016-03-18 | 2016-09-12 | Seed crystal block for a quasi-single crystal silicon ingot |
| PCT/CN2016/098669 WO2017156989A1 (en) | 2016-03-18 | 2016-09-12 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610158974.1A CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105755531A CN105755531A (en) | 2016-07-13 |
| CN105755531B true CN105755531B (en) | 2018-03-23 |
Family
ID=56345331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610158974.1A Expired - Fee Related CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN105755531B (en) |
| DE (1) | DE212016000213U1 (en) |
| WO (1) | WO2017156989A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105755531B (en) * | 2016-03-18 | 2018-03-23 | 南通大学 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11236291A (en) * | 1998-02-25 | 1999-08-31 | Mitsubishi Materials Corp | Crucible for producing silicon ingot having unidirectionally solidified polycrystalline structure |
| CN202265623U (en) * | 2011-06-27 | 2012-06-06 | 光为绿色新能源股份有限公司 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
| CN103060892B (en) * | 2012-12-26 | 2015-09-16 | 江西赛维Ldk太阳能高科技有限公司 | One kind monocrystalline silicon cast ingot seed crystal joining method |
| CN103952756B (en) * | 2014-05-08 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Adhesion joining method and the crucible for casting ingots of seed crystal for one kind monocrystalline silicon ingot casting |
| CN104131332A (en) * | 2014-08-06 | 2014-11-05 | 江西赛维Ldk太阳能高科技有限公司 | Paving method of seed crystals, pseudo-single crystal silicon wafer and preparation method of pseudo-single crystal silicon wafer |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN104775156A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing structure suitable for directional solidification ingot casting |
| CN104818521A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure for like single crystal silicon cast ingot |
| CN105316758A (en) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | Seed crystal laying method and single crystal growth method through ingotting |
| CN105586632B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | One species monocrystalline silicon cast ingot technique |
| CN105603508B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | A kind of seed crystal splicing construction suitable for class monocrystalline silicon cast ingot |
| CN105755531B (en) * | 2016-03-18 | 2018-03-23 | 南通大学 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
| CN105603509B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | A kind of class monocrystalline silicon production technique based on directional solidification ingot casting |
-
2016
- 2016-03-18 CN CN201610158974.1A patent/CN105755531B/en not_active Expired - Fee Related
- 2016-09-12 DE DE212016000213.9U patent/DE212016000213U1/en not_active Expired - Lifetime
- 2016-09-12 WO PCT/CN2016/098669 patent/WO2017156989A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| DE212016000213U1 (en) | 2018-06-06 |
| WO2017156989A1 (en) | 2017-09-21 |
| CN105755531A (en) | 2016-07-13 |
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| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Qiang Inventor after: Wu Tingxi Inventor after: Song Shuaidi Inventor after: Deng Jie Inventor after: Chen Yun Inventor after: Zhao Youfei Inventor after: Zhang Xiaobing Inventor before: Wang Qiang Inventor before: Zhou Haifeng Inventor before: Deng Jie Inventor before: Zhao Youfei Inventor before: Zhang Xiaobing |
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Granted publication date: 20180323 Termination date: 20190318 |