CN201942777U - Graphite crucible assemble for polycrystalline ingot furnace - Google Patents
Graphite crucible assemble for polycrystalline ingot furnace Download PDFInfo
- Publication number
- CN201942777U CN201942777U CN2010206798845U CN201020679884U CN201942777U CN 201942777 U CN201942777 U CN 201942777U CN 2010206798845 U CN2010206798845 U CN 2010206798845U CN 201020679884 U CN201020679884 U CN 201020679884U CN 201942777 U CN201942777 U CN 201942777U
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- Prior art keywords
- plumbago crucible
- insulation layer
- hole
- ingot furnace
- polycrystalline ingot
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a graphite crucible assemble for polycrystalline ingot furnace. A heat insulation layer is provided on the lateral lower part of the graphite crucible. The heat insulation layer is made of heat insulation felt or other heat insulation materials, and has heat insulation effect on the side and four corners of the crucible. Thus the side, corners and center of silicon mixture can be cooled synchronistically as possible, and the crystallization ratio and the internal quality of the polycrystalline silicon ingot can be improved.
Description
Technical field
The utility model is a kind of polycrystalline ingot furnace plumbago crucible assembly.
Background technology
At present, in the production process of sun power industry polycrystal silicon ingot, employing be the production technique of directional solidification method purification silicon ingot, the equipment that is adopted claims the polycrystalline ingot furnace; When producing polycrystal silicon ingot, need be heated to the silicon material and make its fusing more than 1420 ℃, carry out directional freeze then.In the production process, the silicon material is contained in the fusing of high-purity ceramic crucible internal heating, because ceramic crucible begins to soften about 1300 ℃, generally adopt plumbago crucible to come support in the outside of ceramic crucible, simultaneously also because the silicon material directly contacts and can react with graphite, so can not directly use plumbago crucible carrying silicon material.In order to guarantee the quality of polycrystal silicon ingot, the ceramic crucible internal surface adopts Si usually
3N
4Coating is handled.In changing material and directional freeze process, need to feed 0.6kgf/cm
2The high-purity argon gas of pressure is to take away impurity in the silicon material and to reduce the pollution to thermal field of silicon vapor.
Ceramic crucible commonly used at present is of a size of 880mm * 880mm * 420mm, and the load-bearing of the about 25.4mm plumbago crucible of thickness is adopted in the outside.Because in process of production, make at first that the silicon material melts fully in the ceramic crucible, allow then the silicon material of fusing from the bottom directional freeze up, optimal effect is to allow the silicon material begin to solidify synchronously from crucible bottom, make into crystal face at grade, like this polycrystal silicon ingot crystal forming rate height.
The common problem that exists in the polycrystal silicon ingot production at present is: in the directional freeze process, the silicon material cools off soon at crucible four sides and four jiaos, the crucible center is cooled off slowly, this has had a strong impact on the crystal forming rate of polycrystal silicon ingot, its reason just is the plumbago crucible bottom and speed of cooling is inconsistent all around, the outside is cooled off soon, and the bottom is cooled off slowly, so can not realize the outside and central synchronous directional freeze.
Therefore, how effectively to strengthen the heat insulation effect of polycrystalline ingot furnace crucible bottom, the crystal forming rate and the interior quality that improve silicon ingot become the direction that the technician makes great efforts to study.
The utility model content
At the above-mentioned defective that exists in the prior art, the utility model provides a kind of new polycrystalline ingot furnace plumbago crucible assembly, by strengthening crucible bottom heat insulation effect, improves polycrystalline ingot furnace polycrystal silicon ingot crystal forming rate and interior quality effectively.
Concrete technical scheme of the present utility model is to be provided with thermal insulation layer in existing plumbago crucible outer lower portion.This thermal insulation layer can adopt cured charcoal felt (curing graphite felt), graphite felt or other lagging material to make, it all plays insulation effect to crucible side and four jiaos, make silicon material four sides and four jiaos and the as one man synchronous as far as possible directional freeze in center, thereby improve the crystal forming rate and the interior quality of polycrystal silicon ingot.In the utility model, according to design requirements, described thermal insulation layer can also be arranged on the other parts in the plumbago crucible outside, and even the outside is whole.
For the heat that heating element is produced can fully heat crucible by thermal insulation layer, preferably be provided with groove or hole on the thermal insulation layer.Described groove or hole are high outside and low outside skewed slot or inclined hole, thereby consistent with the direction of heating element thermal radiation propagation.
In order to reduce process gas washing away to insulation quilt, improve its work-ing life, the utility model is the thin plate that carbon/carbon composite, graphite, molybdenum or other material are made in the thermal insulation layer arranged outside, also should be provided with on the thin plate with thermal insulation layer on groove or the hole that the hole site is corresponding, shape is consistent.Described groove or hole are horizontal elongated slot or slotted hole.
The utility model has the advantages that: changing the material stage, the heating element heat can be radiated plumbago crucible by " window shutter ", is delivered to the silicon material again, makes the fusing of silicon material; Anticipate to solidification stages at silicon, this insulation quilt all plays insulation effect to crucible side and four jiaos, makes the cooling synchronously as one man as far as possible of silicon material corner and center, thereby improves the crystal forming rate and the interior quality of polycrystal silicon ingot.
Description of drawings
Fig. 1 is a front view of the present utility model;
Fig. 2 is the sectional view of Fig. 1;
Fig. 3 is the vertical view of Fig. 1;
Wherein, 1, the plumbago crucible side plate, 2, ceramic crucible, 3, heating element, 4, the silicon material, 5, thin plate, 6, thermal insulation layer, 7, the hole, 8, the plumbago crucible base plate, 9, bolt.
Embodiment
Embodiment below by indefiniteness also is further described the utility model in conjunction with the accompanying drawings:
As shown in the figure, present embodiment comprises the plumbago crucible in the ceramic crucible 2 and the outside thereof, and heating member 3 is positioned at the top in the plumbago crucible outside.Plumbago crucible base plate 8 has outwards outstanding prominent edge, and the outside that the plumbago crucible below heating member 3 is protected plate 1 is with thermal insulation layer 6, and thermal insulation layer 6 is arranged at the prominent along last of plumbago crucible base plate 8.There is thin plate 5 in thermal insulation layer 6 outsides, and thin plate 5 and thermal insulation layer 6 are fixed on the plumbago crucible side plate 1 by bolt 9.The horizontal slotted hole 7 that the position correspondence is arranged on thermal insulation layer 6 and the thin plate 5, wherein, the horizontal slotted hole 7 on the thermal insulation layer 6 is the inclined hole that the inboard is low, the outside is high.
The technical solution of the utility model is applicable on the equipment of crystal (as silicon material 4) directional solidification processes.
The foregoing description only is used for explanation of the present invention, is not to its restriction.
Claims (5)
1. a polycrystalline ingot furnace plumbago crucible assembly comprises plumbago crucible, it is characterized in that: be provided with thermal insulation layer (6) in the plumbago crucible outer lower portion.
2. polycrystalline ingot furnace plumbago crucible assembly according to claim 1 is characterized in that: described thermal insulation layer (6) is provided with groove or hole (7).
3. polycrystalline ingot furnace plumbago crucible assembly according to claim 2 is characterized in that: described groove or hole (7) are high outside and low outside skewed slot or inclined hole.
4. according to claim 1 or 2 or 3 described polycrystalline ingot furnace plumbago crucible assemblies, it is characterized in that: thermal insulation layer (6) arranged outside has thin plate (5), thin plate (5) be provided with thermal insulation layer (6) on groove or the hole that position, hole (7) is corresponding, shape is consistent.
5. polycrystalline ingot furnace plumbago crucible assembly according to claim 4 is characterized in that: described groove or hole (7) are horizontal elongated slot or slotted hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206798845U CN201942777U (en) | 2010-12-27 | 2010-12-27 | Graphite crucible assemble for polycrystalline ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206798845U CN201942777U (en) | 2010-12-27 | 2010-12-27 | Graphite crucible assemble for polycrystalline ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201942777U true CN201942777U (en) | 2011-08-24 |
Family
ID=44470125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206798845U Expired - Fee Related CN201942777U (en) | 2010-12-27 | 2010-12-27 | Graphite crucible assemble for polycrystalline ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201942777U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102392298A (en) * | 2011-11-15 | 2012-03-28 | 镇江环太硅科技有限公司 | Composite baffle used for polysilicon casting |
| WO2012171308A1 (en) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | Method for cast production of quasi-monocrystalline silicon |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
-
2010
- 2010-12-27 CN CN2010206798845U patent/CN201942777U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012171308A1 (en) * | 2011-06-15 | 2012-12-20 | 安阳市凤凰光伏科技有限公司 | Method for cast production of quasi-monocrystalline silicon |
| CN102392298A (en) * | 2011-11-15 | 2012-03-28 | 镇江环太硅科技有限公司 | Composite baffle used for polysilicon casting |
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN105780112B (en) * | 2016-05-25 | 2019-01-29 | 晶科能源有限公司 | A kind of ingot casting graphite protective plate and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110824 Termination date: 20171227 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |