CN102358951B - Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches - Google Patents
Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches Download PDFInfo
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- CN102358951B CN102358951B CN201110306527.3A CN201110306527A CN102358951B CN 102358951 B CN102358951 B CN 102358951B CN 201110306527 A CN201110306527 A CN 201110306527A CN 102358951 B CN102358951 B CN 102358951B
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title abstract 5
- 238000004321 preservation Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 230000026676 system process Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Abstract
The invention relates to a thermal system and a technology for producing a float zone doped single crystal silicon having a size phi of 6 inches. The thermal system comprises a coil and a heat preservation cylinder. An upper surface of the coil has an inclined multi-stepped coil structure. An external diameter phi of the coil is in a range of 350+50/-50 millimeters. An internal diameter phi of the coil is in a range of 50+2/-2 millimeters. The thickness of the coil is in a range of 30+2/-2 millimeters. A diameter phi of the heat preservation cylinder is in a range of 350+50/-50 millimeters. The height of the heat preservation cylinder is in a range of 100+20/-20 millimeters. A distance between the coil and the heat preservation cylinder is in a range of 100+50/-50 millimeters. The technology is characterized in that impurity gas is fed into a furnace chamber in shoulder extension, wherein a lower shaft rotating speed is in a range of 7 to 10 revolutions per minute and a shoulder extension angle is in a range of 40+2/-2 degrees; and in equal-diameter growth, a lower shaft has a falling speed of 3 to 4 millimeters per minute and a rotating speed of 3 to 5 revolutions per minute and coil pulser power is 60 to 70% of rated power. Through the thermal system which is a novel thermal system and adjustment on technological parameters, the float zone doped single crystal silicon having a size phi of 6 inches can be successfully prepared by drawing, and dislocation and burr generation problems produced easily in production of a float zone doped single crystal silicon with a large size are solved, and thus market demands on single crystal silicon with a large size are satisfied.
Description
Technical field
The present invention relates to the production method of silicon single-crystal, hot system and technique that particularly the molten gas in 6 inches of districts of a kind of Φ of production is mixed silicon single-crystal.
Background technology
Semiconducter device producer, for the consideration of boosting productivity, reduce costs, increase the aspects such as profit, all progressively requires to increase the diameter of silicon chip, and ever-larger diameters is the eternal problem of semiconducter device industry and materials industry.But in the production process of zone-melted silicon single crystal, along with the increase of single crystal diameter, its Cheng Jing is also more and more difficult.
Draw the molten diameter monocrystalline in district, because the heat radiation of monocrystalline center is slower, edge heat radiation is very fast, so monocrystalline solid-liquid interface is recessed bowl-shape.Monocrystalline edge solidifies prior to center, and volumetric expansion when solidify center can be produced internal stress.Once stress is greater than the elastic limit of silicon single-crystal, can produce the disconnected bud of dislocation.When drawing large diameter silicon monocrystal, problem is particularly outstanding, and because diameter is larger, the inside and outside radiating rate difference of monocrystalline is larger, and the stress producing during the solidification and crystallization of center is also larger, more easily produces the disconnected bud of dislocation.Monocrystalline, in process of growth, once encounter impurity particle, is easy to produce new nucleus and becomes polycrystalline.Monocrystalline is adulterated, be to the inner impurity atoms of introducing of single-crystal lattice, increase and resolve luxuriant risk.To successfully draw major diameter doped single crystal, thermal field has been proposed to requirements at the higher level.
The overall dimension of the zone-melted silicon single crystal under prior art is 6 inches of 5 inches of Φ or Φ.
Summary of the invention
The hot system and the technique that the object of the present invention is to provide the molten gas in 6 inches of districts of a kind of Φ of production to mix silicon single-crystal.
For reaching above object, need adjust hot system, make monocrystalline inside and outside solidify more synchronously, to reduce stress, cause disconnected luxuriant probability.
Increase the height of heat-preservation cylinder to about 100mm, diameter is increased to 350 ± 50mm, with coil-span from being reduced to 100 ± 50mm, strengthened its heat insulation effect, can slow down the rate of cooling of monocrystalline outside, thereby make the inside and outside solidification and crystallization of monocrystalline comparatively synchronous, reduce the thermal stresses producing.
In isometrical process, reduce lower shaft rotating speed to 3 ~ 5rpm; Expand in shoulder process, reduce lower shaft rotating speed to 7 ~ 10rpm.Both can reduce the relative movement of monocrystalline and surrounding atmosphere, also can slow down the rate of cooling of monocrystalline outside, thereby make the inside and outside solidification and crystallization of monocrystalline comparatively synchronous, reduce the thermal stresses producing.
While expanding shoulder, select slowly to expand shoulder, making to expand fillet degree is 40 ° ± 2 °, also can make monocrystalline solidification and crystallization inner and edge comparatively synchronous, reduces the probability that thermal stresses produces.
Because monocrystalline rate of cooling has reduced, so the releasability of silicon single-crystal latent heat of phase change has also been reduced, need suitably to reduce the lowering speed of lower shaft, through test of many times, it is comparatively suitable that lowering speed is down to 3 ~ 4mm/min.
Single crystal diameter size increases, and the also corresponding increase of silicon melt supply that the unit time needs, needs the power that increases coil producer to melt more polysilicon so.By test, 60% ~ 70% requirement that can meet production that coil generator power is its rated output.
Selecting external diameter is Φ 350 ± 50mm, and internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm, and upper surface is that upper surface is many steps coil that tilts, and can make the distribution of electromagnetic field and more even to the heating of polycrystalline charge bar, prevents " going out thorn " problem.
The technical solution used in the present invention is: the hot system that the molten gas in 6 inches of districts of a kind of Φ of production is mixed silicon single-crystal, comprise coil and heat-preservation cylinder, it is characterized in that: described coil upper surface is many steps coil that tilts, and coil outer diameter is Φ 350 ± 50mm, internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm.
Described heat-preservation cylinder diameter is Φ 350 ± 50mm, is highly 100 ± 20mm.
The distance of described coil and heat-preservation cylinder is 100 ± 50mm.
Produce the technique that the molten gas in 6 inches of districts of Φ is mixed silicon single-crystal, it is characterized in that: in expansion shoulder process, in furnace chamber, pass into impurity gas, lower shaft rotating speed is 7～10rpm, and expanding fillet degree is 40 ° ± 2 °; In isodiametric growth process, lower shaft lowering speed is about 3～4mm/min, and lower shaft rotating speed is 3～5rpm, and coil generator power is its rated output 60%～70%.
The beneficial effect that the present invention produces is: by adopting newly-designed hot system and having adjusted processing parameter, can successfully draw out the molten gas in 6 inches of districts of Φ and mix silicon single-crystal, solve large diameter zone melting gas and mixed silicon single-crystal and easily produce the disconnected bud of dislocation and " going out thorn " problem in production process, thereby met the demand of market to large diameter silicon monocrystal.
Accompanying drawing explanation
Fig. 1 is the hot system architecture schematic diagram that the molten gas in production 6 inches of districts of Φ is mixed silicon single-crystal.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the invention will be further described.With reference to Fig. 1, the hot system that the molten gas in 6 inches of districts of a kind of Φ of production is mixed silicon single-crystal comprises coil 1 and heat-preservation cylinder 2, and coil 1 upper surface is many steps coil that tilts, and coil 1 external diameter is Φ 300mm, and internal diameter is Φ 50mm, and thickness is 30mm.Heat-preservation cylinder 2 diameters are Φ 300mm, are highly 100mm.Coil 1 is 100mm with the distance of heat-preservation cylinder 2.The water coolant water route 3 of coil 1 and the water coolant water route 4 of heat-preservation cylinder 2 lay respectively at the two inside.
The equipment that the molten gas in production 6 inches of districts of Φ is mixed silicon single-crystal employing is PVA FZ-30 type, and its technique concrete steps are as follows:
One, first by oven door opening, by fibrous paper by the part wipings such as fire door inwall, upper furnace chamber, upper axle, coil and heat-preservation cylinder one time; Chuck is arranged on to polycrystal head, and screws up with a wrench, afterwards chuck is arranged on to upper axle low side, adjust afterwards polycrystalline charge bar 5, make it to be vertical state; Then coil 1 and heat-preservation cylinder 2 are installed, and are carried out horizontal adjustment with water level gauge.With special centering instrument, carry out afterwards the centering of coil.Afterwards graphite annulus is stretched out, decline polycrystalline charge bar, makes it to be positioned at the about 3mm in graphite annulus top.
Two, being evacuated to furnace pressure is 0.1bar, is filled with afterwards Ar gas and makes furnace pressure reach 4bar, slowly increases afterwards power and carries out preheating, and be 30 minutes warm up time.Upwards rise afterwards the about 5mm of monocrystalline 6, regain graphite annulus, decline polycrystalline charge bar heats.
Three, drawing-down neck: thin neck diameter of phi 2～3mm, length is 150mm.
Four, expand shoulder: in expansion shoulder process, in stove, pass into impurity gas, lower shaft rotating speed is 7～10rpm, and expanding fillet degree is 42 °.
Five, isodiametric growth: in isodiametric growth process, lower shaft lowering speed is 3.5mm/min, and lower shaft rotating speed is 5rpm, coil generator power is its rated output 60%～70%.
Six, ending: ending length is >=150mm.
Claims (2)
1. produce the hot system that the molten gas in 6 inches of districts of Φ is mixed silicon single-crystal for one kind, comprise coil (1) and heat-preservation cylinder (2), it is characterized in that: described coil (1) upper surface is many steps coil that tilts, and coil (1) external diameter is Φ 350 ± 50mm, internal diameter is Φ 50 ± 2mm, and thickness is 30 ± 2mm; Described heat-preservation cylinder (2) diameter is Φ 350 ± 50mm, is highly 100 ± 20mm; Described coil (1) is 100 ± 50mm with the distance of heat-preservation cylinder (2).
2. adopt the molten gas in production as claimed in claim 16 inches of districts of Φ to mix a hot system process for silicon single-crystal, it is characterized in that: in expansion shoulder process, to burner hearth, pass into impurity gas, lower shaft rotating speed is 7～10rpm, and expanding fillet degree is 40 ° ± 2 °; In isodiametric growth process, lower shaft lowering speed is 3～4mm/min, and lower shaft rotating speed is 3～5rpm, and coil generator power is its rated output 60%～70%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110306527.3A CN102358951B (en) | 2011-10-11 | 2011-10-11 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110306527.3A CN102358951B (en) | 2011-10-11 | 2011-10-11 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
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| Publication Number | Publication Date |
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| CN102358951A CN102358951A (en) | 2012-02-22 |
| CN102358951B true CN102358951B (en) | 2014-04-16 |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534754B (en) * | 2012-02-29 | 2014-11-12 | 浙江晶盛机电股份有限公司 | Reflection ring lifting device for improving thermal field of zone-melting single-crystal furnace |
| CN102586859A (en) * | 2012-03-10 | 2012-07-18 | 天津市环欧半导体材料技术有限公司 | Method for improving radial resistivity uniformity of float-zone silicon monocrystal |
| CN102808216A (en) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | Float-zone monocrystalline silicon production process and float-zone thermal field |
| CN103820847B (en) * | 2012-11-16 | 2016-06-15 | 有研半导体材料有限公司 | A kind of zone-melting process growing large-size silicon single crystal thermograde controls device and method |
| CN103966658A (en) * | 2013-02-01 | 2014-08-06 | 刘剑 | Double water circuit cooling zone melting induction coil |
| CN103255473B (en) * | 2013-04-25 | 2016-06-29 | 浙江晶盛机电股份有限公司 | A kind of assisted heating device for zone melting furnace and monocrystal rod heat preserving method thereof |
| CN103255472B (en) | 2013-04-25 | 2016-12-28 | 浙江晶盛机电股份有限公司 | There is zone melting furnace thermal field and the heat preserving method of dual power supply heating |
| CN103451727B (en) * | 2013-08-19 | 2016-10-12 | 浙江晶盛机电股份有限公司 | Zone melting furnace polycrystalline rod attemperator and heat preserving method thereof |
| CN103993352A (en) * | 2014-04-18 | 2014-08-20 | 洛阳金诺机械工程有限公司 | Silicon core pulling method for rotating seed crystals |
| CN106702474B (en) * | 2015-07-20 | 2019-04-12 | 有研半导体材料有限公司 | The technique of polycrystalline thorn is eliminated in a kind of growth of zone-melted silicon single crystal |
| CN106702473B (en) * | 2015-07-20 | 2019-05-21 | 有研半导体材料有限公司 | Prevention polycrystalline goes out the technique pierced in a kind of growth of zone-melted silicon single crystal |
| CN105154966A (en) * | 2015-10-19 | 2015-12-16 | 天津市环欧半导体材料技术有限公司 | Novel heat-insulating cylinder for improving crystallization of zone-melting silicon single crystals |
| CN105177699A (en) * | 2015-10-19 | 2015-12-23 | 天津市环欧半导体材料技术有限公司 | Refection ring for improving uniformity of axial and radial resistivities of float zone silicon single crystal |
| DE102018210317A1 (en) * | 2018-06-25 | 2020-01-02 | Siltronic Ag | Method for producing a single crystal from semiconductor material according to the FZ method, device for carrying out the method and semiconductor wafer made of silicon |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |