CN201267022Y - Heating coil for purifying polycrystalline silicon empty space melt - Google Patents
Heating coil for purifying polycrystalline silicon empty space melt Download PDFInfo
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- CN201267022Y CN201267022Y CNU2008201365205U CN200820136520U CN201267022Y CN 201267022 Y CN201267022 Y CN 201267022Y CN U2008201365205 U CNU2008201365205 U CN U2008201365205U CN 200820136520 U CN200820136520 U CN 200820136520U CN 201267022 Y CN201267022 Y CN 201267022Y
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Abstract
The utility model discloses a heating coil for polysilicon vacuum zonemelting purification, which comprises a coil framework and a coil water-cooled tube and is characterized in that: the upper surface around the inner circle of the coil framework is provided with a first step and a second step; one end of the bottom of the second step is at a second inclination angle with an inclined surface and an horizontal surface formed by the connection of the edge of the inner circle of the coil framework; the inner circle of the coil framework is an eccentric type structure; and the lower surface of the coil is provided with an eccentric carving groove. The heating coil overcomes the defect of easily generated burr at the edge of the polysilicon caused by larger diameter during the vacuum zonemelting purification process. The internal diameter eccentric type structure greatly decrease the possibility of belt occurrence in melting zone, and the inclined design of the upper surface of the coil strengthens the fluidity of the melt silicon of the polycrystalline melt interface. One side close to an electrode upper flange and an electrode lower flange on the coil framework is provided with an inclined cut with cut surfaces being mutual parallel, thus decreasing electromagnetic leakage.
Description
Technical field
The utility model relates to polysilicon vacuum purification field, relates in particular to a kind of heater coil that is used for the polysilicon vacuum zone refining.
Background technology
Zone melting, it is molten to be called for short the district, finger is according to the principle of liquid mixture component redistribution (being called segregation) in the condensation-crystallization process, by fusion repeatedly with solidify, prepares a kind of method of purification that purity can reach 99.999% highly purified metal, semi-conducting material and organic compound.The typical method of Qu Rong is to be 0.5～3m or longer thin rod with being made length by the material of being purified, pass through high-frequency induction heating, make a bit of solid be melt into liquid state, only than the high several years of fusing point of solid material, cooling will be separated out solid phase to the melting zone liquidus temperature a little.Melting zone slowly moves vertically, and is per hour several to tens centimetres.Along with melting zone moves forward, impurity also along with moving, is enriched in an end of rod at last, is excised.A zone melting often can not be satisfied desired degree of purity, usually must be through repeatedly repetitive operation, or the length along thin rod forms several melting zones successively in once-through operation.
Utilize the evaporation and the effect of segregation of impurity, polysilicon is carried out repeatedly the steps necessary that the vacuum zone melting purification is the low compensation of preparation, high-purity high resistance zone-melting silicon materials.Because polysilicon is in purification process, each is inconsistent to crystalline rate for polycrystalline, and the release of crystallization latent heat very easily makes the inner slight crack that produces of major diameter polysilicon, causes and can't use, so the polysilicon diameter that present vacuum zone melting is purified generally is controlled at below 50 ± 2mm.Because preparation High Resistivity Si material require is repeatedly purified to polysilicon, the stability of purifying seems particularly important, promptly during the preparation as polycrystalline edge lunge occurs, solidify in the melting zone, waistband appears in the melting zone, the situations such as stove of collapsing all will be interrupted whole process of preparation, waistband generates the general shouldering stage of purifying at polycrystalline, because heating power, the thermal field shape, polycrystalline shape three does not match, cause forming the not melting solid of an astragal shape at the melting zone core, be commonly called as " waistband ", therefore, a stable thermal field that is used for the vacuum zone melting purification just seems particularly important, and the core of thermal field is a heater coil.
Traditional heater coil that is used for the following silicon monocrystal growth of 52mm is generally flat board " duckbilled coil ", as depicted in figs. 1 and 2, the coil water cooling tube is positioned at the coil rack periphery, circle is one just round in the coil rack, the coil lower surface is an inclined surface, there is an end of otch to adopt flange that the coil water cooling tube is fixed at coil, at present, usually directly this " duckbilled coil " being used for polysilicon vacuum purifies, but because polysilicon vacuum is purified and monocrystalline silicon growing process characteristic and inequality, when the polycrystalline diameter strengthens gradually, the mobile variation of the molten silicon in polycrystalline fusing interface, the polycrystalline melt-edge is because of crossing cold easy generation burr, when polycrystalline diameter during greater than 45mm, this phenomenon is particularly evident, is difficult to be applied to carry out repeatedly in the technology of vacuum zone melting purification, experimental results show that this kind heater coil and is not suitable for vacuum zone melting and purify.
Can be used for a kind of Denmark of also having of polysilicon vacuum zone refining coil, as shown in Figure 3 and Figure 4, the coil upper surface is carved with a step, the coil lower surface has inclined design, circle adopts eccentric design in the coil rack, be that a rectangle adds a positive semicircle promptly near flange one side, opposite side is positive semicircle, experimental results show that this coil effect and bad, though the probability of separate unit rank design the reduction to a certain extent polycrystalline melt-edge lunge, but because the step energy emission is limited in scope, easily cause the local energy skewness, local overcooling produces burr, adopts simultaneously in this kind coil purification process, the molten silicon flowability in polycrystalline fusing interface is still relatively poor, has the stove hidden danger of collapsing.In addition, the off-centre design of coil employing though can reduce the probability that waistband produces in theory, because the asymmetric degree of hub of a spool is bigger, causes the Energy distribution inhomogeneities bigger, and local energy is low excessively, and is also not obvious to the effect of removing waistband.
The utility model content
The technical problem that the utility model solves is, a kind of heater coil that is used for the polysilicon vacuum zone refining is provided, when providing thermal field, can overcome the defective that diameter is bigger in the vacuum zone melting purification process polysilicon edge is prone to burr for vacuum zone melting.
The technical solution adopted in the utility model is, the described heater coil that is used for the polysilicon vacuum zone refining, comprise coil rack and coil water cooling tube, the welding of coil water cooling tube embeds in the coil rack, the inclined-plane that circle lower edge one end and coil lower surface connect in the coil rack is horizontal by first angle of inclination, this coil adopts dull and stereotyped single turn structure, the upper surface that encloses at the coil rack inner periphery is provided with first order step and second level step, first order step place diameter of a circle is greater than step place, second level diameter of a circle, and the inclined-plane that bottom one end of second level step and coil rack internal circle edge connect into is horizontal by second angle of inclination.
This coil further comprises electrode upper flange and electrode lower flange, electrode connecting hole and water-cooled pore are arranged on electrode upper flange and the electrode lower flange, the coil water cooling tube passes the water-cooled pore and welds mutually with electrode upper flange and electrode lower flange respectively, recirculated cooling water is by coil water cooling tube turnover coil rack, and the side near electrode upper flange and electrode lower flange on described coil rack is provided with an otch.
As a kind of optimized technical scheme, circle is the centering type structure in the described coil rack, can be by a semicircle and half oval composition, and the coil lower surface is provided with an eccentric cutting.
As another kind of optimized technical scheme, described otch is an angular cutouts that tangent plane is parallel to each other.
Adopt technique scheme, the utility model has following advantage at least:
The heater coil that is used for the polysilicon vacuum zone refining described in the utility model is fit to repeatedly vacuum zone melting purifies, and the coil upper surface has the two-stage step, has overcome the defective that the big polysilicon edge of diameter in the vacuum zone melting purification process is prone to burr.The design of internal diameter centering type reduces the possibility that waistband appears in the melting zone greatly, and coil upper surface inclined design has strengthened the molten silicon flowability in polycrystalline fusing interface.Coil lower surface inclined design helps the release of polycrystalline crystallization latent heat.Side near electrode upper flange and electrode lower flange on coil rack is provided with an angular cutouts that tangent plane is parallel to each other, has reduced electromagnetic leakage.
Description of drawings
Fig. 1 is a duckbilled loop construction schematic diagram;
Fig. 2 is the A-A face cutaway view of Fig. 1;
Fig. 3 is Denmark's loop construction schematic diagram;
Fig. 4 is the A-A face cutaway view of Fig. 3;
Fig. 5 is the utility model first embodiment heater coil structural representation;
Fig. 6 is the A-A face cutaway view of Fig. 5;
Fig. 7 is that the B of Fig. 5 is to view;
Fig. 8 is the described heater coil structural representation that is used for the polysilicon vacuum zone refining of the utility model the 3rd embodiment;
Fig. 9 is the A-A face cutaway view of Fig. 7;
Figure 10 is that the B of Fig. 7 is to view;
The otch schematic diagram of heater coil among Figure 11 the utility model the 4th embodiment.
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined purpose is taked, below in conjunction with accompanying drawing and preferred embodiment, to the described heater coil that is used for the polysilicon vacuum zone refining that the utility model proposes describe in detail as after.
The utility model first embodiment, the described heater coil structure that is used for the polysilicon vacuum zone refining adopts the basic structure of the dull and stereotyped single-turn circular coil of pancake formula as shown in Figure 5, and described pancake formula single turn thickness of structure is 7～9mm.Described heater coil comprises coil rack 501, coil water cooling tube 502, electrode upper flange 503 and electrode lower flange 504,502 welding of coil water cooling tube embed in the coil rack 501, this structure can improve the effect of water-cooled, be easy to the processing of coil surface simultaneously, coil rack 501 and coil water cooling tube 502 all adopt red copper T2 level.As shown in Figure 7, the water-cooled pore 702 that electrode connecting hole 701 is arranged on electrode upper flange 503 and the electrode lower flange 504 and pass for coil water cooling tube 502, coil water cooling tube 502 pass water-cooled pore 702 and weld mutually with electrode upper flange 503 and electrode lower flange 504 respectively.Recirculated cooling water cools off by water-cooled pore 702 turnover coils and to it.
As shown in Figure 6, the upper surface that the coil rack inner periphery encloses adopts the two-stage ledge structure, comprise first order step 601 and second level step 602, the diameter of two-stage step all is slightly larger than the diameter of polysilicon, such as, if the diameter of polysilicon is 2 inches, be 50.8mm, first order step 601 place diameter of a circles are 52～54mm so, and step 602 place diameter of a circles in the second level are 48～50mm, and the height of first order step 601 and second level step 602 is 1～1.5mm.The structure of two-stage step strengthens the described local electromagnetic field that produces of heater coil that is used for the polysilicon vacuum zone refining, improve the fusing interface of inside and outside both sides, polycrystalline outer simultaneously, the burr that elimination is prone to than major diameter sized polysilicon outer in the vacuum purification process, diameter belongs to polysilicon than the major diameter size at the polysilicon of 45mm～52mm.The coil upper surface is the inclined-plane 603 that dips down, be bottom one end of second level step and coil rack internal circle along the inclined-plane that connects into horizontal by second angle of inclination, second angle of inclination can be 6～9 degree, can make the unlikely from inside to outside reduction gradually of electromagnetic field energy, make the smooth and ecto-entad inclination in polycrystalline fusing interface, the molten silicon in fusing interface is tending towards flowing to the center, melting zone, has increased the flowability of molten silicon.The coil lower surface is the face 604 that is inclined upwardly, be that circle lower edge one end and coil lower surface connect in the coil rack inclined-plane is horizontal by first angle of inclination, first angle of inclination can be 7～10 degree, can strengthen the energy emission area, reduce polycrystalline freezing interface temperature gradient, help the release of stress in the polycrystalline crystallization process, reduce the inner danger that fracture occurs of polysilicon.It is parallel to each other and perpendicular to the otch 703 of horizontal plane, this otch 703 is positioned on the extended line of coil rack circular diameter to offer tangent plane near a side of electrode upper flange and electrode lower flange on coil rack 501.
The utility model second embodiment, the structure of the described heater coil that is used for the polysilicon vacuum zone refining is identical substantially with first embodiment, just the first order step place diameter of a circle that adopts in the present embodiment is 53mm, step place, second level diameter of a circle is 49mm, and the height of first order step and second level step is 1mm.
The utility model the 3rd embodiment, the described heater coil structure that is used for the polysilicon vacuum zone refining as shown in Figure 8, the described heater coil that is used for the polysilicon vacuum zone refining comprises electrode upper flange 803, electrode lower flange 804, coil rack 801, coil water cooling tube 802, the structure of coil is identical substantially with first embodiment, coil has upper surface inclined plane 903, lower surface inclined plane 904 and the two-stage step that is positioned at upper surface: first order step 901 and second level step 902, difference is, circle adopts the centering type structure in the described coil rack, round arc in enlarging near flange one side forms eccentric 805.In the practical application, circle can be made up of half just round semiellipse with close flange one side in the coil rack of employing centering type structure, and the semi-minor axis of ellipse equates that with positive radius of a circle the length of the major semiaxis of ellipse can be 1.15:1 with the ratio of positive radius of a circle.As shown in Figure 9, coil lower surface inclined plane 904 is provided with eccentric cutting 905, and described eccentric cutting 905 is to justify the lower edge level to carve 4～6mm to the flange direction in coil rack.The centering type structure can make heating power, thermal field shape, polycrystalline shape three mate more, reduce the possibility that waistband occurs, and owing to adopted oval off-centre, be unlikely to make the too asymmetric low excessively situation of local energy that causes of electromagnetic field distribution again, increase the melting zone simultaneously and stir, improve radially resistivity inhomogeneities of polysilicon.Eccentric cutting 905 can make maintenance flat stable in interface under the melting zone.As shown in figure 10, it is parallel to each other and perpendicular to the otch 1003 of horizontal plane to offer tangent plane near a side of electrode upper flange and electrode lower flange on described coil rack, and otch 1003 is positioned on the extended line of oval major semiaxis near flange one side.
The utility model the 4th embodiment, the structure of the described heater coil that is used for the polysilicon vacuum zone refining and the basically identical of the 3rd embodiment, just present embodiment as shown in figure 11, side near electrode upper flange and electrode lower flange on described coil rack offers an angular cutouts 1103 that tangent plane is parallel to each other, angular cutouts 1103 is positioned on the extended line of oval major semiaxis near flange one side, is used to reduce electromagnetic leakage.
Explanation by embodiment, can be to reach technological means and the effect that predetermined purpose takes to be able to more deeply and concrete understanding to the utility model, yet appended diagram only provide with reference to the usefulness of explanation, be not to be used for the utility model is limited.
Claims (10)
1, a kind of heater coil that is used for the polysilicon vacuum zone refining, comprise coil rack and coil water cooling tube, the welding of coil water cooling tube embeds in the coil rack, the inclined-plane that circle lower edge one end and coil lower surface connect in the described coil rack is horizontal by first angle of inclination, it is characterized in that, described coil adopts dull and stereotyped single turn structure, the upper surface that encloses at the coil rack inner periphery is provided with first order step and second level step, first order step place diameter of a circle is greater than second step place diameter of a circle, and the inclined-plane that bottom one end of second level step and coil rack internal circle edge connect into is horizontal by second angle of inclination.
2, heater coil according to claim 1, it is characterized in that, this coil further comprises electrode upper flange and electrode lower flange, electrode connecting hole and water-cooled pore are arranged on electrode upper flange and the electrode lower flange, the coil water cooling tube pass the water-cooled pore and respectively with electrode on method and electrode lower flange weld mutually, recirculated cooling water is by coil water cooling tube turnover coil rack, and the side near electrode upper flange and electrode lower flange on described coil rack offers an otch.
3, heater coil according to claim 1 and 2 is characterized in that, described coil rack and coil water cooling tube all adopt red copper T2 level material to make.
4, heater coil according to claim 3 is characterized in that, described pancake formula single turn thickness of structure is 7～9mm.
5, heater coil according to claim 4 is characterized in that, described first angle of inclination is 7～10 degree.
6, heater coil according to claim 5 is characterized in that, described second angle of inclination is 6～9 degree.
7, heater coil according to claim 6 is characterized in that, first order step place diameter of a circle is 52～54mm, and step place, second level diameter of a circle is 48～50mm, and the height of first order step and second level step is 1～1.5mm.
8, heater coil according to claim 6 is characterized in that, first order step place diameter of a circle is 53mm, and step place, second level diameter of a circle is 49mm, and the height of first order step and second level step is 1mm.
9, heater coil according to claim 7, it is characterized in that, circle is the centering type structure in the coil rack, by half just circle form with a semiellipse, oval semi-minor axis equates with positive radius of a circle, the length of oval major semiaxis is 1.15:1 with the ratio of positive radius of a circle, and the coil lower surface is provided with an eccentric cutting, and described eccentric cutting is to justify the lower edge level to carve 4～6mm to the flange direction in coil rack.
10, heater coil according to claim 9 is characterized in that, described otch is an angular cutouts that tangent plane is parallel to each other, and is positioned on the extended line of oval major semiaxis near flange one side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201365205U CN201267022Y (en) | 2008-09-11 | 2008-09-11 | Heating coil for purifying polycrystalline silicon empty space melt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201365205U CN201267022Y (en) | 2008-09-11 | 2008-09-11 | Heating coil for purifying polycrystalline silicon empty space melt |
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| CN201267022Y true CN201267022Y (en) | 2009-07-01 |
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| CNU2008201365205U Expired - Fee Related CN201267022Y (en) | 2008-09-11 | 2008-09-11 | Heating coil for purifying polycrystalline silicon empty space melt |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102358951A (en) * | 2011-10-11 | 2012-02-22 | 天津市环欧半导体材料技术有限公司 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
| CN101787559B (en) * | 2010-01-12 | 2012-07-04 | 峨嵋半导体材料研究所 | Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition |
| CN102808216A (en) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | Float-zone monocrystalline silicon production process and float-zone thermal field |
| CN102995106A (en) * | 2012-09-25 | 2013-03-27 | 北京京运通科技股份有限公司 | Electrode of heating device for zone melting furnace |
| CN109402725A (en) * | 2018-12-04 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of purification coil and method for major diameter polysilicon bar |
| CN112238186A (en) * | 2020-09-04 | 2021-01-19 | 中国石油天然气集团有限公司 | Method and device for machining small-radius bent pipe |
-
2008
- 2008-09-11 CN CNU2008201365205U patent/CN201267022Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101787559B (en) * | 2010-01-12 | 2012-07-04 | 峨嵋半导体材料研究所 | Heater coil device for preparing high resistance zone-melting monocrystalline silicon in vacuum condition |
| CN102358951A (en) * | 2011-10-11 | 2012-02-22 | 天津市环欧半导体材料技术有限公司 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
| CN102358951B (en) * | 2011-10-11 | 2014-04-16 | 天津市环欧半导体材料技术有限公司 | Thermal system and technology for producing float zone doped single crystal silicon having size phi of 6 inches |
| CN102808216A (en) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | Float-zone monocrystalline silicon production process and float-zone thermal field |
| CN102995106A (en) * | 2012-09-25 | 2013-03-27 | 北京京运通科技股份有限公司 | Electrode of heating device for zone melting furnace |
| CN102995106B (en) * | 2012-09-25 | 2015-06-24 | 北京京运通科技股份有限公司 | Electrode of heating device for zone melting furnace |
| CN109402725A (en) * | 2018-12-04 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of purification coil and method for major diameter polysilicon bar |
| CN112238186A (en) * | 2020-09-04 | 2021-01-19 | 中国石油天然气集团有限公司 | Method and device for machining small-radius bent pipe |
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Granted publication date: 20090701 Termination date: 20110911 |