CN105239150A - Flow guide cylinder for monocrystal silicon growth furnace and application thereof - Google Patents
Flow guide cylinder for monocrystal silicon growth furnace and application thereof Download PDFInfo
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- CN105239150A CN105239150A CN201510572960.XA CN201510572960A CN105239150A CN 105239150 A CN105239150 A CN 105239150A CN 201510572960 A CN201510572960 A CN 201510572960A CN 105239150 A CN105239150 A CN 105239150A
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Abstract
The invention provides a flow guide cylinder for a monocrystal silicon growth furnace, which includes a tapered flow guide inner cylinder and a tapered flow guide outer cylinder, a heat preservation layer filled with heat preservation carbon felt is disposed therebetween. A heat insulation layer made from metal molybdenum or tungsten is disposed between the outer cylinder and the heat preservation layer. The tapered inner cylinder is used for absorbing radiation heat from a crystal ingot and then cooling the crystal ingot by means of gas rectifying to increase axial temperature gradient of the crystal ingot. Meanwhile, by means of the flow guide cylinder to rectify the gas, the flow speed of the gas is increased to reduce the partial pressure of SiO at liquid level of the melt, thereby reducing oxygen content in the melt. The flow guide cylinder can improve the quality of the crystal ingot, can accelerate growth of the crystal and can reduce production cost. The invention also provides an application method of eliminating polycrystal particles in quartz crucible walls by means of the flow guide cylinder.
Description
Technical field
The invention belongs to manufacturing device of single crystal silicon, especially relate to a kind of monocrystalline silicon growing furnace guide shell improving silicon monocrystal growth speed, reduce oxygen level in silicon single crystal.
Background technology
Along with unicircuit is to the fast development of miniaturization, reduce power consumption, high arithmetic speed, narrow linewidth, the quality of large size unicircuit silicon chip and performance are had higher requirement.Along with the increasing of crystal ingot size, the Temperature Field Design difficulty needed for crystal ingot growth increases, and monocrystalline silicon growing furnace manufacture difficulty and cost significantly increase.
In ic manufacturing process, to oxygen level in silicon chip, there is strict requirement, in order to avoid manufactured chip the major accident such as to burn in use procedure.In monocrystalline silicon growing process, oxygen element is mainly derived from adsorb oxygen and the quartz crucible on polycrystal raw material surface, reduce the concentration of oxygen element in melt be monocrystalline silicon growing faced by matter of utmost importance.Because the oxygen element in melt exists mainly with SiO form, by guide shell, argon gas stream is converged to crucible central authorities, thus accelerate the volatilization of SiO, can significantly reduce oxygen concn in melt.Meanwhile, the argon gas stream of convergence can accelerate the cooling of crystal ingot, increases crystal ingot axial-temperature gradient, improves crystal ingot growth velocity.
A kind of Novel guide cylinder that improve Modelling of Crystal Growth in CZ-Si Pulling speed of prior art such as described in CN201420688047.7, although have employed the thought of inner/outer tube and inner core point top and bottom independent design again, decrease the radiant heat of guide shell to crystal ingot, but grow latter stage at crystal ingot, along with the minimizing of melt volume, quartz crucible bare area enlarges markedly, the radiant heat of quartz crucible wall to urceolus significantly increases, inner core temperature is caused to raise, on the contrary comparatively large radiation heat is created to crystal ingot, be unfavorable for that crystal ingot grows.
A kind of guide shell drawing major diameter N-type monocrystalline again such as described in 201320808094.6, although be provided with molybdenum dividing plate between inner bag and thermal insulation layer, but courage and thermal insulation layer directly do not arrange molybdenum dividing plate outside, cause melt liquid level and the thermal radiation of quartz crucible wall to be absorbed by the whole insulation layer of urceolus, thermal insulation layer and molybdenum dividing plate close contact simultaneously, forms conductive heat transfer, molybdenum baffle temperature is raised, and higher than the temperature of inner bag, on the contrary thermal radiation is become to inner cylindrical, be unfavorable for the Thermal release of crystal ingot.
In sum, existing technology has to a certain extent provides crystal ingot growth velocity, reduce the effect of oxygen concn in melt, but still there are problems, as: (1) crystal ingot grows latter stage, and sidewall of crucible aggravates the radiation of guide shell, and guide shell temperature raises, guide shell self aggravates the radiation of crystal ingot, is unfavorable for the growth of crystal ingot.(2) seriously, the temperature increasing for melting materials time is longer, and single crystal growing furnace power consumption is high for crucible and melt thermal radiation heat loss.(3) in crystal ingot, oxygen concn is still higher, needs the oxygen level reduced further in melt, thus improves the resistivity of crystal ingot.
Simultaneously; in monocrystalline silicon growing process; after polycrystalline silicon raw material melts; easily on inner wall of quartz crucible, adhering to the polycrysalline silcon much do not melted or block, normally by increasing the output rating of graphite heater, improving the temperature of sidewall of crucible; slowly particle or block are melted; length consuming time, big energy-consuming, and removal ability is limited.And in crystal ingot pulling growth process, adhere to particle on inner wall of quartz crucible or block easily occurs to come off suddenly, drop in crucible, the stability of havoc melt temperature field and fluid field, affects ingot quality.
Thus, the present invention also provides a kind of efficient removal inner wall of quartz crucible to adhere to the method for polycrystalline particle or block.
Summary of the invention
The object of this invention is to provide a kind of monocrystalline silicon growing furnace guide shell that effectively can improve crystal growth rate, reduce growth power consumption, reduce oxygen level in crystal ingot.
A kind of monocrystalline silicon growing furnace guide shell, it comprises the cylindrical shell with taper inner core, and described cylindrical shell comprises the inner core of taper, the urceolus of bottom level step, the thermal insulation layer of filling between inner core and urceolus and is provided with thermofin between thermal insulation layer and urceolus.Described inner core is made up of the matrix material of carbon/carbon, and described urceolus is made by metal molybdenum or tungsten, and described thermal insulation layer is made by carbon felt, and described thermofin is made by metal molybdenum or tungsten thin slice.
Further, described inner core is characterized in that inner core inwall is uneven surface, its objective is the radiant heat absorbing to crystal ingot surface, reduces the radiation to crystal ingot, improves the radiating efficiency of crystal ingot.
Further, described inner core inwall can through blasting craft process.
Further, the outer wall of described inner core is shiny surface, and its surfaceness is not more than 0.2 μm, its objective is that reflection carrys out the radiant heat to thermal insulation layer.
Further, the outer wall of described inner core does not contact with thermal insulation layer, and the spacing of inner tank theca and thermal insulation layer is not less than 5mm.
Further, the inner tube wall of described inner core and the gradient Θ of horizontal plane are 60 ~ 85 degree, the wall thickness d of inner core
1be 5 ~ 10mm.
The supporting section of inner core is fixed at the segmental arc that described urceolus is characterized in that comprising vertical section cylindrical shell, horizontal section ring-shaped step, vertically section are connected with horizontal section and horizontal bench edge.
Further, the outer wall of described urceolus and the lower surface of urceolus horizontal section are shiny surface, and surfaceness is not more than 0.2 μm, its objective is that reflection carrys out the radiant heat to liquid level and sidewall of crucible, reduce crystal ingot growth power consumption.
Further, the wall thickness of described urceolus is 5 ~ 10mm.
Further, described urceolus lower central opening inside diameter R
1afor required growth ingot diameters R
i1.2 ~ 1.4 times.
Further, described segmental arc and vertical section and horizontal section in smoothing junction, the arc length of segmental arc is quartz crucible internal diameter R
c's1/10 ~ 1/8 times.
Further, the external diameter R of described vertical section cylindrical shell
2for quartz crucible internal diameter R
c0.8 ~ 0.9 times.
Further, the segmental arc of described urceolus and the horizontal clearance of horizontal section are d=(R
2b-R
2a)/2, and meet formula
1/6R
c≤d≤1/4R
c
In formula, Rc is the diameter of quartz crucible.
The present invention also provides a kind of special applications based on this guide shell, in monocrystalline silicon growing process, utilizes this guide shell to assist and melts the polycrystal particle that adheres on quartz crucible wall and the oxygen level reduced in melt.Concrete operation step is as follows:
(1) after polycrystal raw material melts completely, by the pot position of crucible lift mechanism raise crucible;
(2) by increasing heating power, the temperature of melt liquid level is made to raise 0 ~ 20 DEG C;
(3) by reflection and the rectification function of guide shell, to the polycrystal particle adhered on quartz crucible wall, constant temperature process 0.5 ~ 5 hour;
(4) decline bushing position, adjustment heating power, stablizes warm field, prepares to perform seeding operation.
Further, described pot position is characterized in that making Altitude control bottom melt liquid level distance guide shell between 20 ~ 50mm.
Further, described working method is characterized in that the climbing speed of crucible controls between 100mm/h ~ 150mm/h.
Accompanying drawing explanation
Fig. 1 is monocrystalline silicon growing furnace guide shell schematic diagram of the present invention.
Fig. 2 is monocrystalline silicon growing furnace guide shell application schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
(1) monocrystalline silicon growing furnace guide shell
With reference to Fig. 1, monocrystalline silicon growing furnace guide shell of the present invention, comprises screen 1 in being made up of carbon/carbon compound material, the urceolus 2 be prepared from by metal molybdenum or tungsten, the thermal insulation layer 4 of filling between urceolus and inner core and is provided with thermal baffle 3 between thermal insulation layer and urceolus.Thermal insulation layer 4 is prepared from by carbon composite, and thermal baffle is suppressed by thin metal molybdenum or tungsten and formed.
The roughness of inner core inner wall surface is provided by sand blasting process, improve the thermal absorptivity of inner core inner wall surface, reducing surface to coming to the thermal-radiating reflection potential of crystal ingot, being beneficial to the release of crystal ingot heat, improve the axial-temperature gradient of crystal ingot, accelerate crystal ingot growth velocity.
Reduced the roughness of outer drum outer wall and urceolus lower surface by glossing, improve surface reflection efficiency, improving surface to coming to melt liquid level and the thermal-radiating reflection potential of quartz crucible wall, playing the object of shielding heat.Reduce the thermal radiation loss of melt liquid level and quartz crucible, reduce the power consumption needed for crystal ingot growth, reduce production cost.
Wider horizontal section is set bottom urceolus, increases high velocity air, reduce the dividing potential drop of SiO in air-flow, increase the contact area of air-flow and melt liquid level simultaneously, promote the volatilization of SiO in melt, reduce oxygen concn in melt further, thus the oxygen concn in reduction crystal ingot, improve the resistivity of crystal ingot.
(2) a kind of polycrystal particle based on this guide shell process quartz crucible wall adheres to reduce the method for oxygen concn in melt.
The present invention also provides a kind of special applications based on this guide shell, in monocrystalline silicon growing process, utilizes this guide shell to assist the polycrystal particle melting and adhere on quartz crucible wall, and promotes the volatilization of SiO in melt, reduce oxygen level in melt.Concrete operation step is as follows:
A, after polycrystal raw material melts completely, by crucible lift mechanism with the pot position of the speed raise crucible of 100mm/h ~ 150mm/h, make melt liquid level distance guide shell bottom Altitude control between 20 ~ 50mm;
B, by increase heating power, make bath surface temperature raise 0 ~ 20 DEG C;
C, subsequently by guide shell, constant temperature process is carried out 0.5 ~ 5 hour to the polycrystal particle that sidewall of crucible adheres to, polycrystal particle is melted gradually and reduces or disappear;
D, decline bushing position, adjustment heating power, stablizes warm field, prepares to perform seeding operation.
The height of liquid level to guide shell is reduced by guide shell, reduce the gap between guide shell and sidewall of crucible, and by the particular design of the wider horizontal section of guide shell, increase contact area and the heat exchange duration of air-flow and liquid level heat exchange, raise the temperature flowing to quartz crucible wall gas, increase the flow velocity of gas, thus high temperature air curtain is formed around quartz crucible wall, the thermal radiation to quartz crucible wall is carried out by guide shell reflection, improve the temperature that quartz crucible dries wall, the polycrystal particle impelling quartz crucible wall inwall to adhere to melts gradually and diminishes or disappear, reduce or eliminate the impact on warm field symmetry and stability of polycrystal particle that quartz crucible wall adheres to.
embodiment 1
For 8 inches of monocrystalline silicon growing furnace guide shells, quartz crucible internal diameter R used
cbe 22 inches, required growing single-crystal silicon diameter R
iit is 8 inches.
Guide shell urceolus 2 lower central opening inside diameter R
2a=1.4 × R
i=11.2inch; Guide shell urceolus 2 segmental arc and the vertical section of urceolus and horizontal section in smoothing junction, the arc length L=1/10 × R of segmental arc
c=2.2 inches; The external diameter R of guide shell urceolus 2 vertical sections of cylindrical shells
2b=0.8 × R
c=17.6 inches; The then total thickness d=(R of guide shell urceolus 2
2b-R
2a)/2=(17.6-11.2)/2=3.2 inch.Whole urceolus 2 adopts metal molybdenum or tungsten to obtain, and its thickness is 5mm.The outer wall 2A of urceolus 2 and horizontal bottom 2B, through polished finish, improves surface to thermal-radiating reflection potential.
The lower end of guide shell inner core 1 is connected by demifacet type step with guide shell urceolus, and the gradient of guide shell inner core 1 is 75 degree.Whole guide shell inner core 1 is prepared from by the mixture of carbon/carbon, and its thickness is 5mm.The inwall 1A of guide shell inner core 1, through sandblasting, improves surfaceness, improves inner core inwall 1A to the thermal-radiating specific absorption of crystal ingot.The outer wall 1B of guide shell inner core 1 is through polished finish, and roughness, not higher than 0.2um, improves inner tank theca 1B to the thermal-radiating reflectivity of thermal insulation layer 4.
Between inner core 1 and urceolus 2, be provided with the thermal insulation layer 4 that carbon felt is filled, between thermal insulation layer 4 and urceolus 2, be provided with the high reflection layer 3 that thickness that metal molybdenum makes is about 3mm, surfaceness is not higher than 0.2um.Thermal insulation layer 4 does not contact with inner core 1, is provided with the gap that width is about 5mm, reduces thermal insulation layer heat to the thermal conduction of inner core.
Urceolus hangs on upper level heat shielding, inner core is concentric and be laminated on inner core with urceolus, be added with sealing-ring laminating region, make air-flow through being focused to crystal ingot growth interface by inner core, flow to quartz crucible wall through melt liquid level, then flow out crucible through the space between quartz crucible wall and guide shell urceolus, thus reach reduction melt oxygen concn, reduction crystal ingot growth merit power consumption, and accelerate crystal ingot heat loss, increase crystal ingot axial-temperature gradient, improve crystal ingot growth velocity object.Reduce production cost, improve crystal ingot quality product.
embodiment 2
For 12 inches of monocrystalline silicon growing furnace guide shells, quartz crucible internal diameter R used
cbe 26 inches, required growing single-crystal silicon diameter R
iit is 12 inches.
Guide shell urceolus lower central opening inside diameter R
2a=1.2 × R
i=14.4inch; Guide shell urceolus segmental arc and the vertical section of urceolus and horizontal section in smoothing junction, the arc length L=1/10 × R of segmental arc
c=2.6 inches; The external diameter R of the vertical section cylindrical shell of guide shell urceolus
2b=0.85 × R
c=22.1 inches; The then total thickness d=(R of urceolus
2b-R
2a)/2=(23.8-14.4)/2=4.7 inch.Whole urceolus 2 adopts metal molybdenum or tungsten to obtain, and its thickness is 5mm.The outer wall 2A of urceolus 2 and horizontal bottom 2B, through polished finish, improves surface to thermal-radiating reflection potential.
The lower end of guide shell inner core 1 is connected by demifacet type step with guide shell urceolus, and the gradient of guide shell inner core 1 is 75 degree.Whole guide shell inner core 1 is prepared from by the mixture of carbon/carbon, and its thickness is 5mm.The inwall 1A of guide shell inner core 1, through sandblasting, improves surfaceness, improves inner core inwall 1A to the thermal-radiating specific absorption of crystal ingot.The outer wall 1B of guide shell inner core 1 is through polished finish, and roughness, not higher than 0.2um, improves inner tank theca 1B to the thermal-radiating reflectivity of thermal insulation layer 4.
Between inner core 1 and urceolus 2, be provided with the thermal insulation layer 4 that carbon felt is filled, between thermal insulation layer 4 and urceolus 2, be provided with the high reflection layer 3 that thickness that metal molybdenum makes is about 3mm, surfaceness is not higher than 0.2um.Thermal insulation layer 4 does not contact with inner core 1, is provided with the gap that width is about 5mm, reduces thermal insulation layer heat to the thermal conduction of inner core.Implementation result in the same manner as in Example 1, reduces production cost, improves crystal ingot quality product.
embodiment 3
For 18 inches of monocrystalline silicon growing furnace guide shells, quartz crucible internal diameter R used
cbe 34 inches, the diameter of silicon single crystal R of required growth
iit is 18 inches.
Guide shell urceolus lower central opening inside diameter R
2a=1.2 × R
i=21.6inch; Guide shell urceolus segmental arc and the vertical section of urceolus and horizontal section in smoothing junction, the arc length L=1/8 × R of segmental arc
c=4.25 inches; The external diameter R of the vertical section cylindrical shell of guide shell urceolus
2b=0.9 × R
c=30.6 inches; The then total thickness d=(R of guide shell urceolus
2b-R
2a)/2=(30.6-21.6)/2=4.5 inch.Whole urceolus 2 adopts metal molybdenum or tungsten to obtain, and its thickness is 5mm.The outer wall 2A of urceolus 2 and horizontal bottom 2B, through polished finish, improves surface to thermal-radiating reflection potential.
The lower end of guide shell inner core 1 is connected by demifacet type step with guide shell urceolus, and the gradient of guide shell inner core 1 is 75 degree.Whole guide shell inner core 1 is prepared from by the mixture of carbon/carbon, and its thickness is 5mm.The inwall 1A of guide shell inner core 1, through sandblasting, improves surfaceness, improves inner core inwall 1A to the thermal-radiating specific absorption of crystal ingot.The outer wall 1B of guide shell inner core 1 is through polished finish, and surfaceness, not higher than 0.2 μm, improves inner tank theca 1B to the thermal-radiating reflectivity of thermal insulation layer 4.
Between inner core 1 and urceolus 2, be provided with the thermal insulation layer 4 that carbon felt is filled, between thermal insulation layer 4 and urceolus 2, be provided with the high reflection layer 3 that thickness that metal molybdenum makes is about 3mm, surfaceness is not higher than 0.2 μm.Thermal insulation layer 4 does not contact with inner core 1, is provided with the gap that width is about 5mm, reduces thermal insulation layer heat to the thermal conduction of inner core.Implementation result in the same manner as in Example 1, reduces production cost, improves crystal ingot quality product.
embodiment 4
This embodiment provides a kind of method of the polycrystal particle by guide shell process quartz crucible wall of the present invention adheres to.
In monocrystalline silicon growing process, in polycrystal raw material thaw process, on sidewall of crucible, often adhere to the polycrystal particle that a lot of size differs, affect the symmetry of temperature field and gas flowfield, simultaneously in ingot growing process, the polycrystal particle burst sticked on quartz crucible wall comes off, and falls in crucible melt, easily cause melt liquid level to fluctuate and smelt splashes, have a strong impact on the normal growth of crystal ingot.In conjunction with guide shell of the present invention, provide a kind for the treatment of process, concrete operation step is as follows:
A, polycrystal raw material is filled in quartz crucible, vacuumizes, temperature increasing for melting materials;
B, after polycrystal raw material melts completely, by crucible lift mechanism with the speed raise crucible of 100mm/h, make melt liquid level distance guide shell bottom Altitude control at 50mm;
C, by increase heating power, make the temperature of bath surface raise 20 DEG C;
D, subsequently by guide shell, constant temperature process is carried out 0.5 hour to the polycrystal particle that sidewall of crucible adheres to;
E, decline bushing position, adjustment heating power, stablizes warm field, prepares to perform seeding operation.
By this embodiment, effectively dispel the polycrystal particle adhered on quartz crucible wall, the treatment time is shorter, cost-saving.In melt, oxygen concn also significantly reduces.Owing to increasing melt temperature, when seeding operates, need to readjust seeding temperature, steady temperature field and fluid field.
embodiment 5
This embodiment provides a kind of polycrystal particle by guide shell process quartz crucible wall of the present invention adheres to and reduces the method for oxygen concn in melt.
This embodiment in the same manner as in Example 4, but the temperature of the bath surface that do not heat up.Concrete operation step is as follows:
A, polycrystal raw material is filled in quartz crucible, vacuumizes, temperature increasing for melting materials;
B, after polycrystal raw material melts completely, by crucible lift mechanism with the speed raise crucible of 100mm/h, make melt liquid level distance guide shell bottom Altitude control at 20mm;
C, do not increase heater power, do not raise bath surface temperature;
D, subsequently by guide shell, constant temperature process is carried out 3 hours to the polycrystal particle that sidewall of crucible adheres to;
E, decline bushing position, stablize warm field, prepares to perform seeding operation.
This embodiment, compared with embodiment 4, does not raise the temperature of melt, does not need to reduce power, readjusts seeding temperature, reduces the disturbance of melt flow field, is conducive to the stable of melt flow field, for seeding creates good condition.Though the constant temperature treatment time is slightly long, the oxygen in melt obtains abundant release, and oxygen concn is lower; Melt natural convection is comparatively slow simultaneously, more weak to the erosion corrosion of quartz crucible wall.
embodiment 6
This embodiment provides a kind of polycrystal particle by guide shell process quartz crucible wall of the present invention adheres to and reduces the method for oxygen concn in melt.
Concrete operation step is as follows:
A, polycrystal raw material is filled in quartz crucible, vacuumizes, temperature increasing for melting materials;
B, after polycrystal raw material melts completely, by crucible lift mechanism with the speed raise crucible of 100mm/h, make melt liquid level distance guide shell bottom Altitude control at 40mm;
C, by increase heating power, make the temperature of bath surface raise 10 DEG C;
D, subsequently by guide shell, constant temperature process is carried out 2 hours to the polycrystal particle that sidewall of crucible adheres to;
E, decline bushing position, adjustment heating power, stablizes warm field, prepares to perform seeding operation.
This embodiment is compared with embodiment 4, and constant temperature treatment temp is lower, and the flowing of melt is comparatively mild, comparatively soft to washing away of quartz crucible.Though the constant temperature treatment time is slightly long, the oxygen in melt obtains abundant release, and oxygen concn is lower.
Claims (16)
1. a monocrystalline silicon growing furnace guide shell, is characterized in that: the inner core 1 of taper, bottom is with the urceolus 2 of circular horizontal step, the thermal insulation layer 4 of filling between inner core and urceolus and be provided with thermofin 3 between thermal insulation layer and urceolus.
2. the inner core 1 described in is made by metal molybdenum or tungsten, and urceolus 2 is made by the matrix material of carbon/carbon, and described thermal insulation layer 3 is made by carbon felt, and described thermofin is made by metal molybdenum or tungsten thin slice.
3. the monocrystalline silicon growing furnace guide shell according to claims 1, is characterized in that the inwall 1A of described inner core 1 is uneven surface.
4. the monocrystalline silicon growing furnace guide shell according to claims 2, is characterized in that the inwall 1A of described inner core 1 obtains uneven surface through blasting craft process.
5. the monocrystalline silicon growing furnace guide shell according to claims 1, it is characterized in that the outer wall 1B of described inner core 1 is shiny surface, its surfaceness is not more than 0.2 μm.
6. the monocrystalline silicon growing furnace guide shell according to claims 1, it is characterized in that the outer wall 1A of described inner core 1 does not contact with thermal insulation layer 4, and the spacing of inner tank theca 1A and thermal insulation layer 4 is not less than 5mm.
7. the monocrystalline silicon growing furnace guide shell according to claims 1, is characterized in that the gradient Θ that the conical shell of described inner core 1 and horizontal plane are formed is within 60 ~ 85 degree.
8. the monocrystalline silicon growing furnace guide shell according to claims 1, is characterized in that the supporting section of inner core is fixed at described urceolus 2 comprises vertical section cylindrical shell, the horizontal section of base circle plane, vertically section are connected with horizontal section segmental arc and horizontal bench edge.
9. the monocrystalline silicon growing furnace guide shell according to claims 1, it is characterized in that the lower surface 2B of the outer wall 2A of the vertical section of described urceolus 2, the outer wall of segmental arc and urceolus horizontal section is shiny surface, surfaceness is not more than 0.2 μm.
10. the monocrystalline silicon growing furnace guide shell according to claims 1, is characterized in that described urceolus 1 lower central opening inside diameter R
1afor required growth ingot diameters R
i1.2 ~ 1.4 times.
11. monocrystalline silicon growing furnace guide shells according to claims 1, it is characterized in that described segmental arc and vertical section and horizontal section are in smoothing junction, and the arc length of segmental arc are quartz crucible internal diameter R
c's1/10 ~ 1/8 times.
12. monocrystalline silicon growing furnace guide shells according to claims 1, is characterized in that the external diameter R of described vertical section cylindrical shell
2for quartz crucible internal diameter R
c0.8 ~ 0.9 times.
13. monocrystalline silicon growing furnace guide shells according to claims 1, is characterized in that the segmental arc of described urceolus and the horizontal clearance of horizontal section are d=(R
2b-R
2a)/2, and meet formula:
1/6R
c≤d≤1/4R
c
In formula, Rc is the diameter of quartz crucible.
14. the present invention also provide a kind of special applications based on this guide shell, its spy is being: in monocrystalline silicon growing process, utilize this guide shell to assist and melt the polycrystal particle that adheres on quartz crucible wall and the oxygen level reduced in melt, concrete operation step is as follows:
(1) after polycrystal raw material melts completely, the pot position of quartz crucible is raised by crucible lift mechanism;
(2) by increasing heating power, the temperature of melt liquid level is made to raise 0 ~ 20 DEG C;
(3) to the polycrystal particle constant temperature process adhered on quartz crucible wall 0.5 ~ 5 hour;
(4) decline bushing position, adjustment heating power, stablizes warm field, prepares to perform seeding operation.
15. application methodes according to claims 13, described pot position is characterized in that Altitude control bottom melt liquid level distance guide shell is between 20 ~ 50mm.
16. application methodes according to claims 13, is characterized in that the climbing speed of quartz crucible controls between 100mm/h ~ 150mm/h.
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| JP2023509113A (en) * | 2020-08-10 | 2023-03-07 | 西安奕斯偉材料科技有限公司 | Single crystal furnace assembly sleeve and single crystal furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202849590U (en) * | 2012-10-08 | 2013-04-03 | 英利能源（中国）有限公司 | Guide cylinder and single crystal furnace |
| CN203021676U (en) * | 2012-12-24 | 2013-06-26 | 九州方园新能源股份有限公司 | Flow guide tube for increasing growth rate of monocrystalline silicon |
| CN203613301U (en) * | 2013-12-10 | 2014-05-28 | 银川隆基硅材料有限公司 | Draft tube for drawing major-diameter N-shaped single crystal |
| CN204111931U (en) * | 2014-10-17 | 2015-01-21 | 包头市山晟新能源有限责任公司 | Guide shell |
| CN104328485A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel flow guide cylinder capable of improving growth rate of Czochralski silicon monocrystals |
-
2015
- 2015-09-10 CN CN201510572960.XA patent/CN105239150A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202849590U (en) * | 2012-10-08 | 2013-04-03 | 英利能源（中国）有限公司 | Guide cylinder and single crystal furnace |
| CN203021676U (en) * | 2012-12-24 | 2013-06-26 | 九州方园新能源股份有限公司 | Flow guide tube for increasing growth rate of monocrystalline silicon |
| CN203613301U (en) * | 2013-12-10 | 2014-05-28 | 银川隆基硅材料有限公司 | Draft tube for drawing major-diameter N-shaped single crystal |
| CN204111931U (en) * | 2014-10-17 | 2015-01-21 | 包头市山晟新能源有限责任公司 | Guide shell |
| CN104328485A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel flow guide cylinder capable of improving growth rate of Czochralski silicon monocrystals |
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| CN108239785A (en) * | 2016-12-23 | 2018-07-03 | 有研半导体材料有限公司 | To the processing method of bridging during a kind of vertical pulling method production monocrystalline silicon |
| CN110573662A (en) * | 2017-04-05 | 2019-12-13 | 胜高股份有限公司 | Heat shield member, single crystal pulling apparatus, and method for manufacturing single crystal silicon ingot |
| US11473210B2 (en) * | 2017-04-05 | 2022-10-18 | Sumco Corporation | Heat shielding member, single crystal pulling apparatus, and method of producing single crystal silicon ingot |
| CN107227489A (en) * | 2017-07-13 | 2017-10-03 | 符志椿 | Monocrystalline silicon growing furnace molybdenum guide shell and processing technology |
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| CN111519241B (en) * | 2019-02-01 | 2021-12-17 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
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| CN111893557A (en) * | 2020-07-01 | 2020-11-06 | 中国科学院上海微系统与信息技术研究所 | Thermal barrier device for isolating heat and smelting furnace |
| CN111926380A (en) * | 2020-07-01 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Heat shield device for single crystal production furnace, control method and single crystal production furnace |
| CN111926379A (en) * | 2020-07-01 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Heat barrier device and smelting furnace |
| CN111926380B (en) * | 2020-07-01 | 2021-10-19 | 中国科学院上海微系统与信息技术研究所 | Heat shield device for single crystal production furnace, control method and single crystal production furnace |
| TWI750099B (en) * | 2020-08-10 | 2021-12-11 | 大陸商西安奕斯偉材料科技有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| CN111876823A (en) * | 2020-08-10 | 2020-11-03 | 西安奕斯伟硅片技术有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| WO2022033187A1 (en) * | 2020-08-10 | 2022-02-17 | 西安奕斯伟材料科技有限公司 | Combined sleeve of single crystal furnace and single crystal furnace |
| JP2023509113A (en) * | 2020-08-10 | 2023-03-07 | 西安奕斯偉材料科技有限公司 | Single crystal furnace assembly sleeve and single crystal furnace |
| JP7432734B2 (en) | 2020-08-10 | 2024-02-16 | 西安奕斯偉材料科技股▲ふん▼有限公司 | Single crystal furnace assembly sleeve and single crystal furnace |
| US11932961B2 (en) | 2020-08-10 | 2024-03-19 | Xian Eswin Material Technology Co., Ltd. | Assembly sleeve of single crystal pulling apparatus, and single crystal pulling apparatus |
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