CN106894082B - Monocrystalline silicon growing furnace - Google Patents
Monocrystalline silicon growing furnace Download PDFInfo
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- CN106894082B CN106894082B CN201510947963.7A CN201510947963A CN106894082B CN 106894082 B CN106894082 B CN 106894082B CN 201510947963 A CN201510947963 A CN 201510947963A CN 106894082 B CN106894082 B CN 106894082B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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Abstract
The invention discloses a kind of monocrystalline silicon growing furnaces, guide shell is shunted it is characterized in that being equipped on graphite crucible mouth, and vertical shunt cylinder is equipped with around primary heater, argon stream is set to be separated into two strands by vertical shunt cylinder, one, which enters in vertical shunt cylinder, is discharged cavity by primary heater, and directly cavity is discharged outside vertical shunt cylinder in another stock；And the flow of two strands of air-flows can be adjusted by drain tap, so as to adjust the distribution and reduction heat loss of thermal field.Monocrystalline silicon growing furnace of the invention can significantly reduce power consumption, shorten crystal ingot growth cycle, reduce production cost.
Description
Technical field
The invention belongs to monocrystalline silicon growing furnaces, more particularly, to a kind of raising melting sources rate, reduce monocrystalline silicon growing
The monocrystalline silicon growing furnace of power consumption.
Background technique
It is integrated to large scale as integrated circuit is to miniaturization, low-power consumption, the fast development of high arithmetic speed, narrow linewidth
More stringent requirements are proposed with performance for the quality of circuit silicon wafer.With the increasing of crystal ingot size, temperature needed for crystal ingot growth
Field design difficulty increases, and monocrystalline silicon growing furnace manufacture difficulty is significantly increased with cost, and monocrystalline silicon growing period and cost are significantly
Increase.
Semiconductor monocrystal silicon growth mainly uses Czochralski method (Czochralski method, abbreviation Cz method).In this side
In method, polysilicon is put into silica crucible, then heating fusing, silicon melt is slightly done and is cooled down, gives certain degree of supercooling,
The silicon single crystal body (seed crystal) of one specific radial is contacted with silicon melt, is lifted up speed by adjusting the temperature and seed crystal of melt
Rate when seed body being made to grow up to close-target diameter, improves the rate of pulling, makes the closely permanent growth in thickness of crystal.At the end of growth course
Phase, the silicon melt in crucible still has remnants at this time, makes ingot diameters gradually by increasing the crystal ingot rate of pulling and adjustment heating power
It is tapered small and form a tapered tail, until crystal ingot and the page are detached from, to complete the growth course of crystal ingot.Thus monocrystalline silicon
Growth course is roughly divided into: filling polycrystal material vacuumizes, atmosphere, temperature increasing for melting materials, seeding, necking down, shouldering, turns shoulder, isometrical life
The processing steps such as grow, finish up, cool down, cool down, come out of the stove.
Existing monocrystalline silicon growing furnace passes through monocrystalline silicon growing furnace bottom using vacuum system in evacuation process process
Gas vent entire growth furnace burner hearth is vacuumized；Then in atmosphere process, high-purity argon gas is entered by upper inlet port,
Argon gas reaches mouth of pot center by guide shell, flows out from mouth of pot edge；Subsequent jump over mouth of pot wall and graphite crucible mouth wall,
By graphite heater (primary heater), crucible bottom is flowed to, flows out monocrystalline silicon growing furnace through lower exhaust port, makes entire burner hearth
Environment protects structure inside burner hearth and device good by argon atmosphere.But in temperature increasing for melting materials and crystal ingot pulling growth mistake
Primary heater is surrounded and flowed through to journey, argon stream, and most of heat of primary heater is caused to be entrained by the flow of air and waste, energy damage
Consumption is big, and the temperature increasing for melting materials time is long；Air-flow constantly brushes entire primary heater simultaneously, and primary heater corrosion is higher with injuring speed.
Existing improved technology such as CN200910218910 provides a kind of energy-saving heat field for silicon single crystal, and argon gas is direct
The exhaust outlet opened up from the lower part on mouth of pot top and heat shielding directly excludes chamber.Although argon gas stream that the technique is is without stone
Black heater is expelled directly out cavity, energy saving；But it is detrimental to the control of the uniformity of burner hearth thermal field, oxygen content, while tight
Ghost image rings the rate of temperature fall of crystal ingot growth rear hearth, is unfavorable for crystal ingot and comes out of the stove and clean；Crystal ingot growth cycle significantly is increased, instead
And reduce the quality and production cost of crystal ingot.
The object of the present invention is to provide a kind of raising melting sources rate, reduction monocrystalline silicon growing power consumption, quickening burner hearth are cold
But the monocrystalline silicon growing furnace of speed.
Summary of the invention
In order to achieve the above object, the invention adopts the following technical scheme:
The present invention provides a kind of equipped with the monocrystalline silicon growing furnace for shunting guide shell and vertical shunt cylinder, it is characterised in that shunts
Guide shell is stacked on graphite crucible mouth, can be rotated together in company with crucible, and argon stream is made to jump over primary heater；By dividing vertically
Air-flow is separated into inside and outside two strands by flow cartridge, and can adjust throughput by drain tap.To make air-flow not brush main add directly
Chamber is discharged outside vertical shunt cylinder in hot device.
Guide shell is shunted by the auxiliary shunt cylinder in horn-like exhaust stator cylinder, the guide platform of horizontal segment and vertical section
Three parts constitute an entirety.
Vertical shunt cylinder includes outer layer quartz tube, middle layer graphite carbon felt and internal layer graphite heat-preservation cylinder.
Further, the maximum height △ H of vertical shunt cylinder distance from top exhaust stator cylinder horizontal segment guide platform bottom is not
Less than 100mm and it is not more than 400mm.In order to guarantee in temperature rise period, when crucible pot position drops to rational position, vertical shunt cylinder
Exhaust stator cylinder right above will not colliding.Meanwhile in crystal ingot pulling growth process, the crucible constantly risen will not make to answer back to
Portion's heat shielding.
Further, the height of vertical section auxiliary shunt cylinder of guide shell is shunted not less than △ H and no more than 1.5 times of △ H.For
Guarantee in the temperature rise period, when crucible pot position drops to rational position, shunts the following of the vertical section auxiliary shunt cylinder of guide shell
Edge has to be lower than the top edge of vertical shunt cylinder, is divided into air-flow at this two strands inside and outside.When the height of auxiliary shunt cylinder
When excessive, the overall weight of exhaust stator cylinder will be significantly increased, be unfavorable for the stabilization of structure.
Further, it shunts guide shell to be made of light thermal-insulation graphite material, thermal conductivity is not more than 20W/m/K, and thickness d is
10-50mm。
Further, it is 1/2 ~ 3/4 times that the thickness for shunting the vertical section auxiliary shunt cylinder of guide shell, which is thinned,.The purpose is to for
The self weight for reducing exhaust stator cylinder, prevents from deforming, protects the integrality of structure.
Further, the distance between the vertical section guide shell of guide shell and vertical shunt cylinder is shunted to be not more than not less than 20mm
100mm。
The present invention also provides another exhaust stator cylinders, mainly by putting down in horn-like exhaust stator cylinder and horizontal segment water conservancy diversion
Platform two parts are constituted.
Further, the outer peripheral distance that the end distance of horizontal segment guide platform dominates flow cartridge is not more than not less than 20mm
100mm.I.e. horizontal segment must be extended to 20 ~ 30mm outside vertical shunt cylinder, to guarantee that vertical shunt cylinder is formed with exhaust stator cylinder
Good diverter function.
The present invention also provides a kind of application method, pass through two strands of air-flows inside and outside the vertical shunt cylinder of exhaust air valve active accommodation
Specific discharge regulates and controls the distribution of heat, and main application method is:
(1) it vacuumizes: closing all valves, open cavity bottom inner/outer tube exhaust valve, entire cavity is vacuumized,
Chamber pressure is set to be less than 0.1Torr.
(2) atmosphere: when air pressure is lower than 0.1Torr, opening argon gas valve, leads to argon gas on one side to cavity, vacuumizes on one side.
Saving vacuumizes, atmosphere technical process is time-consuming.
(3) temperature increasing for melting materials: by adjusting the drain tap on the inside of vertical shunt cylinder, make the list of argon gas stream in vertical shunt cylinder
Bit traffic is less than the 1/3 of the total intake of argon gas.The loss for reducing primary heater heat, improves the effective rate of utilization of heat, improves
Polycrystalline silicon raw material melting rate reduces material power.
(4) crystal ingot is grown: when the weight of crystal ingot is greater than 2/3 times of polysilicon total amount of feeding, by adjusting vertical shunt cylinder
The drain tap of inside makes the specific discharge of argon gas stream in vertical shunt cylinder be not less than the 1/3 of the total intake of argon gas, is not more than argon
The 2/3 of the total intake of gas.
(5) cooling down: by adjusting the drain tap on the outside of vertical shunt cylinder, make the list of argon gas stream in vertical shunt cylinder
Bit traffic is not less than the 2/3 of the total intake of argon gas.
Beneficial effects of the present invention
Argon stream is divided into two strands of inner/outer tube, is passed through respectively by the present invention by exhaust stator cylinder and vertical shunt cylinder
Drain tap adjusts flow, to reduce the heat that argon gas stream takes away heater, while simultaneously by vertical shunt cylinder shielding hot-fluid
The heat radiation of heater is reflected, to reduce heat scattering and disappearing from furnace wall, reduces radial symmetry gradient in furnace.Reduce whole function
It consumes and is conducive to shorten polycrystal material thawing duration, save the cost.
Detailed description of the invention
Fig. 1 is that monocrystalline silicon growing furnace shunts schematic diagram
Fig. 2 is monocrystalline silicon growing furnace schematic diagram
Fig. 3 is vertical shunt cylinder schematic diagram
Fig. 4 is two kinds of shunting guide shell schematic diagrames.
Wherein: 1, monocrystaline silicon stove lifts rotating device；2, air inlet；3, furnace body；4, insulating layer；5, external cavity is vented
Mouthful；6, internal cavity；7, crucible rotation support shaft；8, seed crystal lifting line；9, seedholder；10, seed crystal；11 single crystal silicon ingots；
12, top heat shielding；13, primary heater；14, graphite crucible；15 crucible pallets；16, guide shell；17 silica crucibles, 18, lower chamber
Body；19, upper chamber；20, guide shell is shunted；21, vertical shunt cylinder；211, graphite bucket；212, graphite carbon felt；213, quartzy
Cylinder；201, in horn-like exhaust stator cylinder section；202 horizontal guide platform sections；203 vertical auxiliary shunt cylinder sections.
Specific embodiment
In the following, the most preferred embodiment that present invention will be described in detail with reference to the accompanying.
Firstly, being illustrated to the monocrystalline silicon growing furnace apparatus for being applicable in monocrystal silicon growing method of the invention.
Fig. 1 is the monocrystalline silicon life that outlined the monocrystalline silicon silicon ingot growth method for being applicable in an embodiment according to the present invention
The structure chart of long furnace apparatus.
Referring to Fig.1, a kind of Cz method monocrystalline silicon growing furnace for being applicable in Cz method or applying magnetic field is given, with traditional monocrystalline silicon
Growth furnace is compared, the surface of the graphite crucible 14 in the growth furnace, be stacked with one be in trumpet type shunting guide shell 20A, point
Conductance flow cartridge and silica crucible 17, graphite crucible 14 are concentric, and shunting guide shell 20A can follow graphite crucible 14 to revolve together
Turn.The shunting guide shell 20A is made of light thermal-insulation graphite material, and thermal conductivity is not more than 20W/m/K, thickness d 10-50mm.
The shunting guide shell 20A is by the auxiliary shunt cylinder three in horn-like exhaust stator cylinder, the guide platform of horizontal segment and vertical section
A part forms a whole.
It is equipped with vertical shunt cylinder 21 in 13 periphery of graphite heater, by outer layer quartz tube 203, middle layer graphite carbon felt 202
Constituted with internal layer graphite heat-preservation cylinder 201, and it is closely coupled with cavity bottom, and with silica crucible 17, graphite crucible 14, heater
13 with one heart, to divide the chamber into two inside and outside chambers.And vertical 21 outer diameter of shunt cylinder is less than the vertical of shunting guide shell 20A
The internal diameter of section auxiliary guide shell makes vertical shunt cylinder 21 exist apart from the spacing for the vertical section auxiliary guide shell for shunting guide shell 20A
20 ~ 100mm is more suitable for that the spacing of vertical shunt cylinder 21 and heater 13 should be not less than 20mm, prevents short circuit, local temperature mistake
The problems such as high.To ensure that argon gas stream can smoothly cross heater, in order to reduce argon gas stream to the effect of brushing of main heating, reduce
Thermal loss.
Inner/outer tube chamber has independent exhaust outlet respectively, and is connected to exhaust valve 5,6.Independent survey can be added before exhaust valve
Instrument is pressed, convenient for accurately controlling the flow of two strands of air-flows of inner/outer tube.
The present invention is not limited to install to shunt guide shell 20A, vertical shunt cylinder 21 and the exhaust of bottom two are only installed
Valve 5,6 is also able to achieve the function of argon stream shunting, can equally play the role of reducing power consumption, adjustment thermal field, only energy saving
Effect slightly deviation.
When with Cz method or application magnetic field Cz method growth single crystal silicon ingot, monocrystalline silicon growing furnace provided by the invention, specifically
Operating procedure is as follows:
(1) burner hearth is cleaned: the crystal of the main SiO gas for cleaning volatilization.Prevent particle from falling into silica crucible, shadow
Ring the quality of crystal ingot；
(2) it loads raw material: loading polycrystalline silicon raw material and dopant into silica crucible；
(3) it is closed burner hearth: guide shell 20A will be shunted, be lifted on graphite crucible 14, and concentric with silica crucible 17, close
Cavity is closed, all gas valve is closed；
(4) it vacuumizes: opening the drain tap of bottom two 5,6, vacuumize, furnace pressure is made to be less than 0.1Torr；
(5) atmosphere: when air pressure reaches 0.1Torr in furnace, argon gas valve is opened, is vacuumized while leading to argon gas；
(6) temperature increasing for melting materials: by adjusting the drain tap of vertical 21 inside of shunt cylinder, inner cylinder argon stream is gradually turned down
Flow makes the specific discharge of argon gas stream in vertical shunt cylinder 21 be less than the 1/3 of the total intake of argon gas.Reduce argon gas stream and main heating
The convective heat transfer of device heat 13 is lost, and improves the effective rate of utilization and polycrystalline silicon raw material melting rate of heating power, reductionization
Expect power, reduces production cost.
(7) crystal ingot is grown: when the weight of crystal ingot 11 is greater than 2/3 times of polysilicon total amount of feeding, being shunted by adjusting vertical
The drain tap 6 of 21 inside of cylinder, makes the specific discharge of argon gas stream in vertical shunt cylinder 21 be not less than the 1/3 of the total intake of argon gas,
No more than the 2/3 of the total intake of argon gas.
(8) cooling down: by adjusting the drain tap 5 in vertical 21 outside of shunt cylinder, make argon gas stream in vertical shunt cylinder
Specific discharge be not less than the total intake of argon gas 2/3.
The invention will be further described with reference to embodiments.
Embodiment 1
Using Cz method or apply magnetic field Cz method 8 inches of N-type integrated circuit monocrystalline silicon of growth, using 24 inches of quartzy earthenwares
Crucible, polycrystalline silicon raw material loadings 120Kg.Its shunt guide shell with a thickness of 10mm, the thermal conductivity of graphite material used is 20W/
m/K;The overall thickness of vertical shunt cylinder is 80mm, and vertical shunt cylinder and the horizontal space shunted between guide shell are 20mm, maximum
Vertical spacing is 100mm, and the bottom for the inside and outside two chambers that bottom guide shell is separated into is respectively equipped with two groups of drain taps.Vertically
The quartz tube of shunt cylinder outer layer with a thickness of 20mm, internal layer graphite tube with a thickness of 30mm, wherein interbed is filled with graphite carbon felt.
It after the completion of charging, places and shunts guide shell, be closed chamber, open two groups of bottom drain tap, cavity is taken out true
Sky is opened argon gas valve, is vacuumized on one side when furnace pressure is less than 0.1Torr, leads to argon gas on one side, is finally argon flow
Control gradually makes cavity atmosphere in 400L/min.Argon gas is set to enter the gas stream of inner cavity chamber by adjusting exhaust gas inside valve
Amount control is in 100L/min.Main heating power supply is then turned on, heats graphite heater to raw material, until raw material melts completely.
Heating power is adjusted, after thermal field is stablized, seed crystal slowly under immersed in liquid level, carries out seeding, the techniques such as shouldering, isodiametric growth behaviour
Make.When the quality of crystal ingot rises to 80Kg, equably adjusting inner cavity chamber's drain tap makes the gas flow control for entering inner cavity chamber
System is in 200L/min.After the ending of crystal ingot, equably adjusting exocoel drain tap makes the gas stream for entering inner cavity chamber
Amount control is in 100L/min.
By the embodiment in monocrystalline silicon growing process, vacuumize, atmosphere technical process it is 0.5 hour time-consuming；Heating
Material operation stage is 4 hours time-consuming, and temperature increasing for melting materials process peak power is 94kW；Crystal ingot growth power 62kW or so after seeding；
Crystal ingot cooling down operation stage is 4 hours time-consuming.
Embodiment 2
Using Cz method or apply magnetic field Cz method 8 inches of N-type integrated circuit monocrystalline silicon of growth, using 24 inches of quartzy earthenwares
Crucible, polycrystalline silicon raw material loadings 120Kg.Its shunt guide shell with a thickness of 10mm, the thermal conductivity of graphite material used is 20W/
m/K;The overall thickness of vertical shunt cylinder is 80mm, and vertical shunt cylinder and the horizontal space shunted between guide shell are 20mm, maximum
Vertical spacing is 100mm, and the bottom for the inside and outside two chambers that bottom guide shell is separated into is respectively equipped with two groups of drain taps.Vertically
The quartz tube of shunt cylinder outer layer with a thickness of 20mm, internal layer graphite tube with a thickness of 30mm, wherein interbed is filled with graphite carbon felt.
It after the completion of charging, places and shunts guide shell, be closed chamber, open two groups of bottom drain tap, cavity is taken out true
Sky is opened argon gas valve, is vacuumized on one side when furnace pressure is less than 0.1Torr, leads to argon gas on one side, is finally argon flow
Control gradually makes cavity atmosphere in 400L/min.Argon gas is set to enter the gas stream of inner cavity chamber by adjusting exhaust gas inside valve
Amount control is in 120L/min.Main heating power supply is then turned on, heats graphite heater to raw material, until raw material melts completely.
Heating power is adjusted, after thermal field is stablized, seed crystal slowly under immersed in liquid level, carries out seeding, the techniques such as shouldering, isodiametric growth behaviour
Make.When the quality of crystal ingot rises to 80Kg, equably adjusting inner cavity chamber's drain tap makes the gas flow control for entering inner cavity chamber
System is in 200L/min.After the ending of crystal ingot, equably adjusting exocoel drain tap makes the gas stream for entering inner cavity chamber
Amount control is in 100L/min.
By the embodiment in monocrystalline silicon growing process, vacuumize, atmosphere technical process it is 0.5 hour time-consuming；Heating
Material operation stage is 4 hours time-consuming, and peak power needed for temperature increasing for melting materials process is 102kW；Crystal ingot growth power 65kW after seeding
Left and right；Crystal ingot cooling down operation stage is 4 hours time-consuming.
Embodiment 3
Using Cz method or apply magnetic field Cz method 8 inches of N-type integrated circuit monocrystalline silicon of growth, using 24 inches of quartzy earthenwares
Crucible, polycrystalline silicon raw material loadings 120Kg.Its shunt guide shell with a thickness of 10mm, the thermal conductivity of graphite material used is 20W/
m/K;The overall thickness of vertical shunt cylinder is 80mm, and vertical shunt cylinder and the horizontal space shunted between guide shell are 20mm, maximum
Vertical spacing is 100mm, and the bottom for the inside and outside two chambers that bottom guide shell is separated into is respectively equipped with two groups of drain taps.Vertically
The quartz tube of shunt cylinder outer layer with a thickness of 20mm, internal layer graphite tube with a thickness of 30mm, wherein interbed is filled with graphite carbon felt.
It after the completion of charging, places and shunts guide shell, be closed chamber, open two groups of bottom drain tap, cavity is taken out true
Sky is opened argon gas valve, is vacuumized on one side when furnace pressure is less than 0.1Torr, leads to argon gas on one side, is finally argon flow
Control gradually makes cavity atmosphere in 400L/min.Argon gas is set to enter the gas stream of inner cavity chamber by adjusting exhaust gas inside valve
Amount control is in 80L/min.Main heating power supply is then turned on, heats graphite heater to raw material, until raw material melts completely.It adjusts
Whole heating power, after thermal field is stablized, seed crystal slowly under immersed in liquid level, carries out seeding, the techniques such as shouldering, isodiametric growth behaviour
Make.When the quality of crystal ingot rises to 80Kg, equably adjusting inner cavity chamber's drain tap makes the gas flow control for entering inner cavity chamber
System is in 200L/min.After the ending of crystal ingot, equably adjusting exocoel drain tap makes the gas stream for entering inner cavity chamber
Amount control is in 100L/min.
By the embodiment in monocrystalline silicon growing process, vacuumize, atmosphere technical process it is 0.5 hour time-consuming；Heating
Material operation stage is 4 hours time-consuming, and temperature increasing for melting materials process peak power is 89kW；Crystal ingot growth power 60kW or so after seeding；
Crystal ingot cooling down operation stage is 4 hours time-consuming.
Comparative example 1
Consistent with embodiment 1, only after working as the ending of crystal ingot, equably adjusting exocoel drain tap makes into interior
The gas flow of chamber is controlled in 200L/min.
By the comparative example in monocrystalline silicon growing process, vacuumize, atmosphere technical process it is 0.5 hour time-consuming；Heating
Material operation stage is 4 hours time-consuming, and peak power needed for temperature increasing for melting materials process is 94kW；Crystal ingot growth power 62kW is left after seeding
It is right；Crystal ingot cooling down operation stage is 6 hours time-consuming.
Comparative example 2
It is consistent with comparative example 1, only after charging, shunting guide shell is not placed.The Cz method in magnetic field is not applied using Cz method or
Grow 8 inches of integrated circuit single crystal silicon ingots.
As a result, vacuumize, atmosphere technical process it is 0.5 hour time-consuming；Temperature increasing for melting materials operation stage is 6 hours time-consuming,
Peak power needed for temperature increasing for melting materials process is 112kW；Crystal ingot growth power 68kW or so after seeding；Crystal ingot cooling down technique rank
Section is 4 hours time-consuming.
Claims (10)
1. a kind of monocrystalline silicon growing furnace, it is characterised in that be equipped on graphite crucible mouth and shunt guide shell, and in primary heater week
It encloses and is equipped with vertical shunt cylinder, argon stream is made to be separated into two strands by vertical shunt cylinder, one, which passes through, enters warp in vertical shunt cylinder
Primary heater discharge cavity is crossed, directly cavity is discharged outside vertical shunt cylinder in another stock；And two strands can be adjusted by drain tap
The flow of air-flow adjusts the distribution and heat loss of thermal field；
The inner side and outer side of the vertical shunt cylinder is respectively equipped with independent exhaust outlet, and is connected to exhaust valve.
2. monocrystalline silicon growing furnace according to claim 1, it is characterised in that the shunting guide shell includes in horn-like
Exhaust stator cylinder, the guide platform of horizontal segment and three parts of auxiliary shunt cylinder of vertical section.
3. monocrystalline silicon growing furnace according to claim 1, it is characterised in that the vertical shunt cylinder includes outer layer quartz
Cylinder, middle layer graphite carbon felt and internal layer graphite heat-preservation cylinder.
4. monocrystalline silicon growing furnace according to claim 2, it is characterised in that the vertical shunt cylinder distance from top exhaust
The maximum height △ H of guide shell bottom is not more than 400mm not less than 100mm.
5. monocrystalline silicon growing furnace according to claim 4, it is characterised in that the height of the vertical section auxiliary shunt cylinder
Not less than △ H and it is not more than 1.5 times of △ H.
6. monocrystalline silicon growing furnace according to claim 3, it is characterised in that the shunting guide shell uses light thermal-insulation
Graphite material is made, and thermal conductivity is not more than 20W/m/K, thickness d 10-50mm.
7. monocrystalline silicon growing furnace according to claim 2, it is characterised in that the vertical section auxiliary of the shunting guide shell
Horizontal distance between guide shell and vertical shunt cylinder is not more than 100mm not less than 20mm.
8. monocrystalline silicon growing furnace according to claim 1, it is characterised in that the shunting guide shell includes by loudspeaker
The exhaust stator cylinder and horizontal segment guide platform of shape are constituted.
9. the monocrystalline silicon growing furnace according to claim 2 or 8, it is characterised in that the outer diameter of the horizontal segment guide platform
The outer diameter of vertical shunt cylinder should be not less than.
10. a kind of monocrystalline silicon growing process, processing step are as follows:
(1) it vacuumizes: closing all valves, open cavity bottom inner/outer tube exhaust valve, entire cavity is vacuumized, chamber is made
Body pressure is less than 0.1Torr；
(2) atmosphere: when air pressure is lower than 0.1Torr, opening argon gas valve, leads to argon gas on one side to cavity, vacuumizes on one side；
(3) temperature increasing for melting materials: by adjusting the drain tap on the inside of vertical shunt cylinder, make the unit stream of argon gas stream in vertical shunt cylinder
Amount is less than the 1/3 of the total intake of argon gas；
(4) crystal ingot is grown: when the weight of crystal ingot is greater than 2/3 times of polysilicon total amount of feeding, on the inside of vertical shunt cylinder
Drain tap, make argon gas stream in vertical shunt cylinder specific discharge be not less than the total intake of argon gas 1/3, no more than argon gas it is total
The 2/3 of intake；
(5) cooling down: by adjusting the drain tap on the outside of vertical shunt cylinder, make the unit stream of argon gas stream in vertical shunt cylinder
Amount is not less than the 2/3 of the total intake of argon gas.
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| CN113046821A (en) * | 2021-05-11 | 2021-06-29 | 宁国市华成金研科技有限公司 | Multi-station directional solidification and single crystal casting furnace |
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| JP7242979B2 (en) * | 2018-12-17 | 2023-03-22 | 株式会社レゾナック | SiC epitaxial growth equipment |
| KR102270393B1 (en) * | 2019-10-22 | 2021-06-30 | 에스케이실트론 주식회사 | Unit for supplying raw material, apparatus for growing silicon single crytal ingot including the same andmethod for supplying raw material |
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| KR101288529B1 (en) * | 2011-12-15 | 2013-07-26 | 디케이아즈텍 주식회사 | Manufacturing apparatus of polycrystalline sapphire |
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| EP0612867A1 (en) * | 1993-02-23 | 1994-08-31 | Shin-Etsu Handotai Company Limited | Inert gas rectifying/blowing apparatus for single crystal pulling device |
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| CN113046821A (en) * | 2021-05-11 | 2021-06-29 | 宁国市华成金研科技有限公司 | Multi-station directional solidification and single crystal casting furnace |
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