CN203007469U - Thermal field device of czochralski crystal growing furnace - Google Patents
Thermal field device of czochralski crystal growing furnace Download PDFInfo
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- CN203007469U CN203007469U CN 201220614909 CN201220614909U CN203007469U CN 203007469 U CN203007469 U CN 203007469U CN 201220614909 CN201220614909 CN 201220614909 CN 201220614909 U CN201220614909 U CN 201220614909U CN 203007469 U CN203007469 U CN 203007469U
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Abstract
The utility model discloses a thermal field device of a czochralski crystal growing furnace. The thermal field device comprises a furnace body as well as a crucible, a heater and a thermal insulation mechanism which are all arranged in the furnace body, wherein the heater and the thermal insulation mechanism are sequentially arranged around the crucible. The thermal field device also comprises an exhaust mechanism communicated with the outer part of the furnace body, wherein the exhaust mechanism is embedded in the thermal insulation mechanism. The thermal insulation mechanism is embedded in the thermal insulation mechanism, so that volatile matters are prevented from being gathered, the oxygen content in crystals is reduced, and carbon dispersed in the crystals is reduced; and in addition, the corrosion of the volatile matters to the thermal field parts is reduced, the service life of each thermal field part is prolonged, the volatile matters are prevented from being deposited on a discharging path because of being cooled and can be favorably discharged, and the cleaning difficulty is lowered.
Description
Technical field
The utility model belongs to monocrystalline manufacturing technology field, relates to a kind of direct-pulling single crystal furnace thermal field device.
Background technology
Photovoltaic generation is a kind of as the main energy sources of green energy resource and human kind sustainable development, day by day is subject to the attention of countries in the world and is greatly developed.Monocrystalline silicon piece is a kind of as the base mateiral of photovoltaic generation, and the market requirement is widely arranged.In the single crystal growing furnace of vertical pulling method pulling monocrystal, solid-state polycrystalline silicon raw material is molten into liquid with growing single-crystal in quartz crucible.Due to long-time high temperature action, silicon and quartzy constantly reaction generate a large amount of take silicon monoxide as main volatile matter.If the untimely discharge of this volatile matter will be attached to the work-ing life that has a strong impact on the thermal field element on the thermal field graphite piece, What is more, and dropping on molten silicon face or single-crystal surface will directly affect quality product.
For discharging this volatile matter, usually adopt argon gas to form air-flow volatile matter is taken out of from thermal field.In thermal field of single crystal furnace commonly used, argon gas stream between well heater and quartz crucible, perhaps flows through between well heater and thermal insulation layer after melt liquid level, then discharges out of the furnace through graphite piece such as graphite pot sides.So, still have the part volatile matter and deposit on the parts such as well heater, graphite piece, can not discharge up hill and dale volatile matter, still exist thermal field component to clean the problems such as difficult, that work-ing life is short.
Summary of the invention
The purpose of this utility model is to provide a kind of direct-pulling single crystal furnace thermal field device, can not discharge the thermal field component that causes fully and cleans short problem of difficulty, work-ing life to solve volatile matter in existing thermal-field device.
The technical scheme that the utility model adopts is, a kind of direct-pulling single crystal furnace thermal field device, comprise body of heater and be arranged at crucible, well heater and the heat preservation mechanism of body of heater inside, well heater and heat preservation mechanism are successively around the crucible setting, also comprise the air-releasing mechanism that is connected with the body of heater outside, air-releasing mechanism is embedded in heat preservation mechanism.
Characteristics of the present utility model also are:
Heat preservation mechanism comprises the first thermal insulation layer and is positioned at the second thermal insulation layer of the first thermal insulation layer top, the first thermal insulation layer has a plurality of the first open holess, the second thermal insulation layer has a plurality of the second open holess near the first thermal insulation layer, air-releasing mechanism comprises corresponding a plurality of vapor pipes and a plurality of bleeding point that is communicated with one by one, a plurality of vapor pipes are embedded in a plurality of first open holess of the first thermal insulation layer, a plurality of bleeding points are embedded in a plurality of second open holess of the second thermal insulation layer, and relative with crucible and well heater.
A plurality of vapor pipes and a plurality of bleeding point all distribute around the central axis equal angles of crucible.
A plurality of the first open holess are all along the central shaft of crucible to offering.
Heat preservation mechanism comprises that also to be positioned at the first thermal insulation layer inboard and near the transition disc of the second thermal insulation layer, and has and a plurality of bleeding points a plurality of locating slots one to one, and a plurality of locating slots are opened in transition disc.
Heat preservation mechanism also comprises the second heat-preservation cylinder that is positioned at the second thermal insulation layer inboard, and heat preservation mechanism also has and a plurality of bleeding points a plurality of locating slots one to one, and a plurality of locating slots are opened in the second heat-preservation cylinder or the second thermal insulation layer.
Heat preservation mechanism also comprises the insulation cover that is positioned at the second thermal insulation layer inboard.
Also comprise guide shell, guide shell comprises diversion division and flange part, and diversion division partly is positioned at crucible, and flange part is connected in the upper end of diversion division, and the flange part of guide shell is carried on insulation cover.
Also comprise air extractor, air-releasing mechanism is connected with the body of heater outside by air extractor.
The utility model direct-pulling single crystal furnace thermal field device is embedded air-releasing mechanism in heat preservation mechanism, avoided the volatile matter gathering, has reduced oxygen level in crystal, can reduce carbon and diffuse in crystal; Reduced the erosion of volatile matter to thermal field component, extended the work-ing life of thermal field component, avoided volatile matter to be deposited on discharge path because catching a cold, be conducive to discharge volatile matter and alleviate the cleaning difficulty.
Description of drawings
Fig. 1 is the utility model embodiment direct-pulling single crystal furnace thermal field apparatus structure schematic diagram;
Fig. 2 is the structural representation that the utility model embodiment air-releasing mechanism coordinates with transition disc.
In figure, 10. direct-pulling single crystal furnace thermal field device, 11. bodies of heater, 12. crucible, 13. well heaters, 14. heat preservation mechanisms, 15. guide shell, 16. air-releasing mechanisms, 110. main chambers, 140. the first insulation construction, 141. second insulation constructions, 142. first heat-preservation cylinders, 143. transition disc, 144. the first thermal insulation layer, 1440. first open holess, 145. locating slots, 146. the second heat-preservation cylinder, 147. the second thermal insulation layer, 1470. second open holess, 148. insulation covers, 150. diversion division, 151. flange part, 160. vapor pipes, 161. bleeding points.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Embodiment, with reference to Fig. 1, direct-pulling single crystal furnace thermal field device 10 comprises body of heater 11, crucible 12, well heater 13, heat preservation mechanism 14, guide shell 15, air-releasing mechanism 16 and air extractor (not shown).
Body of heater 11 has main chamber 110.Crucible 12, well heater 13, heat preservation mechanism 14, guide shell 15 and air-releasing mechanism 16 all are positioned at main chamber 110.
Crucible 12 can comprise the quartz crucible (not shown) and help (not shown) for the crucible that supports quartz crucible.The polycrystalline silicon raw material of crucible 12 interior accommodating meltings is to carry out crystal pulling.
The upper end of the first insulation construction 140 is a little more than the upper edge of crucible 12 and well heater 13.The first insulation construction 140 comprises near the first heat-preservation cylinder 142 of well heater 13, is equipped with in the transition disc 143 of the first heat-preservation cylinder 142 tops and surrounds the first heat-preservation cylinder 142 and the first thermal insulation layer 144 of transition disc 143 outsides.The first heat-preservation cylinder 142 and transition disc 143 mainly play a supportive role, the first main insulation effect that rises of thermal insulation layer 144.The internal diameter of transition disc 143 is less than the internal diameter of the first heat-preservation cylinder 142, and the external diameter of transition disc 143 equals the external diameter of the first heat-preservation cylinder 142.The first thermal insulation layer 144 has a plurality of the first open holess 1440.A plurality of the first open holess 1440 are all along the central shaft of crucible 12 to offering.In the present embodiment, the quantity of the first open holes 1440 is four, and distributes around the central axis equal angles of crucible 12.Transition disc 143 has and the quantity of a plurality of the first open holess 1440 and position a plurality of locating slots 145 one to one.
The second insulation construction 141 is positioned at the first insulation construction 140 tops.The second insulation construction 141 comprises the second heat-preservation cylinder 146, surrounds the second thermal insulation layer 147 and the insulation cover 148 of the second heat-preservation cylinder 146.The second heat-preservation cylinder 146 is carried on transition disc 143.The internal diameter of the second heat-preservation cylinder 146 equals the internal diameter of transition disc 143.The external diameter of the second thermal insulation layer 147 equals the external diameter of the first thermal insulation layer 144.The second thermal insulation layer 147 has a plurality of the second open holess 1470.A plurality of the second open holess 1470 are opened in the end that the second thermal insulation layer 147 contacts with the first thermal insulation layer 144.A plurality of the second open holess 1470 and the corresponding connection one by one of a plurality of the first open holess 1440.In the present embodiment, the quantity of the second open holes 1470 is also four, and distributes around the central axis equal angles of crucible 12.Insulation cover 148 is annular, is carried on the second heat-preservation cylinder 145 tops, and is positioned at the inboard of the second thermal insulation layer 147 and the second heat-preservation cylinder 146.
Air-releasing mechanism 16 is embedded in heat preservation mechanism 14.Air-releasing mechanism 16 comprises corresponding a plurality of vapor pipes 160 and a plurality of bleeding point 161 that is communicated with one by one.A plurality of vapor pipes 160 and a plurality of bleeding point 161 all distribute around the central axis equal angles of crucible 12.A plurality of vapor pipes 160 are embedded in a plurality of the first open holess 1440 in the first thermal insulation layer 144, a plurality of bleeding points 161 are by a plurality of locating slots 145 location of transition disc 143, and are embedded in a plurality of second open holess 1470 of the second thermal insulation layer 147 and relative with crucible 12 and well heater 13.Certainly, locating slot 145 also can be opened in the second heat-preservation cylinder 146 or the second thermal insulation layer 147.A plurality of vapor pipes 160 all are communicated in the body of heater outside by air extractor.Air extractor can be the mechanisms such as vacuum pump.A plurality of bleeding points 161 are all over against the upper end of crucible 12 and well heater 13.In the present embodiment, the quantity of vapor pipe 160 and bleeding point 161 is four.Certainly, the quantity of vapor pipe 160 and bleeding point 161 is not limited in this, can arrange according to actual needs two, three or more.
Due to a plurality of bleeding points 161 all over against the upper end of crucible 12 and well heater 13, when air extractor is worked, the argon gas stream that enters main chamber 110 from body of heater 11 tops flows along the direction of arrow Fig. 1, volatile matter from melting polysilicon liquid level can in time be discharged through being embedded at the second higher thermal insulation layer 147 of temperature and the bleeding point 161 in the first thermal insulation layer 144 and vapor pipe 160 respectively, and the carbon that well heater 13 produces also can in time be taken away.Can produce following technique effect: the first, can avoid volatile matter to assemble, reduce oxygen level in crystal; The second, can reduce carbon and diffuse in crystal; The 3rd, can reduce volatile matter to the erosion of thermal field component, the work-ing life of prolongation thermal field component; The 4th, can avoid volatile matter to be deposited on discharge path because catching a cold, to be beneficial to and to discharge volatile matter and alleviate the cleaning difficulty.
In the existing thermal-field device of direct-pulling single crystal furnace thermal field device solves that the utility model provides, volatile matter can not be discharged the thermal field component that causes fully and be cleaned the problems such as difficulty, work-ing life be short, is conducive to reduce carbon, the oxygen equal size in the monocrystalline of manufacturing and improves the monocrystalline quality.
Claims (9)
1. direct-pulling single crystal furnace thermal field device, comprise body of heater (11) and be arranged at body of heater (11) inner crucible (12), well heater (13) and heat preservation mechanism (14), described well heater (13) and heat preservation mechanism (14) arrange around described crucible (2) successively, it is characterized in that, also comprise the air-releasing mechanism (16) that is connected with described body of heater (11) outside, described air-releasing mechanism (16) is embedded in described heat preservation mechanism (14).
2. direct-pulling single crystal furnace thermal field device according to claim 1, it is characterized in that: described heat preservation mechanism (14) comprises the first thermal insulation layer (144) and is positioned at second thermal insulation layer (147) of described the first thermal insulation layer (144) top, described the first thermal insulation layer (144) has a plurality of the first open holess (1440), described the second thermal insulation layer (147) has a plurality of the second open holess (1470) near described the first thermal insulation layer (144), described air-releasing mechanism (16) comprises corresponding a plurality of vapor pipes (160) and a plurality of bleeding point (161) that is communicated with one by one, described a plurality of vapor pipe (160) is embedded in a plurality of first open holess (1440) of described the first thermal insulation layer (144), described a plurality of bleeding point (161) is embedded in a plurality of second open holess (1470) of described the second thermal insulation layer (147), and relative with described crucible (12) and well heater (13).
3. direct-pulling single crystal furnace thermal field device according to claim 2, is characterized in that, described a plurality of vapor pipes (160) and a plurality of bleeding point (161) all distribute around the central axis equal angles of described crucible (12).
4. direct-pulling single crystal furnace thermal field device according to claim 2, is characterized in that, described a plurality of the first open holess (1440) are all along the central shaft of described crucible (12) to offering.
5. direct-pulling single crystal furnace thermal field device according to claim 2, it is characterized in that, described heat preservation mechanism (14) also comprises the transition disc (143) that is positioned at inboard and close the second thermal insulation layer (147) of the first thermal insulation layer (144), and have and described a plurality of bleeding points (161) a plurality of locating slots (145) one to one, described a plurality of locating slots (145) are opened in described transition disc (143).
6. direct-pulling single crystal furnace thermal field device according to claim 2, it is characterized in that, described heat preservation mechanism (14) also comprises the second heat-preservation cylinder (146) that is positioned at described the second thermal insulation layer (147) inboard, described heat preservation mechanism (14) also has and described a plurality of bleeding points (161) a plurality of locating slots (145) one to one, and described a plurality of locating slots (145) are opened in described the second heat-preservation cylinder (146) or the second thermal insulation layer (147).
7. direct-pulling single crystal furnace thermal field device according to claim 2, is characterized in that, described heat preservation mechanism (14) also comprises the insulation cover (148) that is positioned at described the second thermal insulation layer (147) inboard.
8. direct-pulling single crystal furnace thermal field device according to claim 7, it is characterized in that, also comprise guide shell (15), described guide shell (15) comprises diversion division (150) and flange part (151), described diversion division (150) part is positioned at described crucible (12), described flange part (151) is connected in the upper end of described diversion division (150), and the flange part (151) of described guide shell (15) is carried on described insulation cover (148).
9. direct-pulling single crystal furnace thermal field device according to claim 1, is characterized in that, also comprises air extractor, and described air-releasing mechanism (16) is connected with body of heater (11) outside by described air extractor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220614909 CN203007469U (en) | 2012-11-19 | 2012-11-19 | Thermal field device of czochralski crystal growing furnace |
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| CN 201220614909 CN203007469U (en) | 2012-11-19 | 2012-11-19 | Thermal field device of czochralski crystal growing furnace |
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| CN 201220614909 Expired - Fee Related CN203007469U (en) | 2012-11-19 | 2012-11-19 | Thermal field device of czochralski crystal growing furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106894082A (en) * | 2015-12-17 | 2017-06-27 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN108085741A (en) * | 2018-01-30 | 2018-05-29 | 宁夏旭樱新能源科技有限公司 | The single crystal growing furnace of applicating energy-saving type thermal field |
| CN111676512A (en) * | 2020-06-09 | 2020-09-18 | 山西潞安太阳能科技有限责任公司 | Method for reducing oxygen content in crystal bar of upper-exhaust single crystal furnace |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
| CN115216832A (en) * | 2021-04-16 | 2022-10-21 | 环球晶圆股份有限公司 | Crystal growth furnace |
| CN116334740A (en) * | 2023-05-31 | 2023-06-27 | 苏州晨晖智能设备有限公司 | Single crystal furnace and oxygen reduction method thereof |
-
2012
- 2012-11-19 CN CN 201220614909 patent/CN203007469U/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106894082A (en) * | 2015-12-17 | 2017-06-27 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN106894082B (en) * | 2015-12-17 | 2019-04-19 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN108085741A (en) * | 2018-01-30 | 2018-05-29 | 宁夏旭樱新能源科技有限公司 | The single crystal growing furnace of applicating energy-saving type thermal field |
| CN108085741B (en) * | 2018-01-30 | 2024-10-01 | 宁夏旭樱新能源科技有限公司 | Single crystal furnace using energy-saving thermal field |
| CN111676512A (en) * | 2020-06-09 | 2020-09-18 | 山西潞安太阳能科技有限责任公司 | Method for reducing oxygen content in crystal bar of upper-exhaust single crystal furnace |
| CN112226811A (en) * | 2020-10-09 | 2021-01-15 | 西安邦泰电子技术有限公司 | Thermal field for single crystal furnace and single crystal furnace |
| CN115216832A (en) * | 2021-04-16 | 2022-10-21 | 环球晶圆股份有限公司 | Crystal growth furnace |
| CN115216832B (en) * | 2021-04-16 | 2024-06-25 | 环球晶圆股份有限公司 | Crystal growth furnace |
| CN116334740A (en) * | 2023-05-31 | 2023-06-27 | 苏州晨晖智能设备有限公司 | Single crystal furnace and oxygen reduction method thereof |
| CN116334740B (en) * | 2023-05-31 | 2023-09-05 | 苏州晨晖智能设备有限公司 | Single crystal furnace and oxygen reduction method thereof |
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| C14 | Grant of patent or utility model | ||
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| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 710100 Changan District, Shaanxi Province, aerospace Road, No. 388, No. Co-patentee after: WUXI LONGI SILICON MATERIALS Corp. Patentee after: LONGI GREEN ENERGY TECHNOLOGY Co.,Ltd. Co-patentee after: NINGXIA LONGI SILICON MATERIALS Co.,Ltd. Co-patentee after: YINCHUAN LONGI SILICON MATERIALS Co.,Ltd. Address before: 710100 Changan District, Shaanxi Province, aerospace Road, No. 388, No. Co-patentee before: WUXI LONGI SILICON MATERIALS Corp. Patentee before: XI'AN LONGI SILICON MATERIALS Corp. Co-patentee before: NINGXIA LONGI SILICON MATERIALS Co.,Ltd. Co-patentee before: YINCHUAN LONGI SILICON MATERIALS Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211009 Address after: 710199 No. 388, Hangtian Middle Road, Chang'an District, Xi'an City, Shaanxi Province Patentee after: LONGI GREEN ENERGY TECHNOLOGY Co.,Ltd. Address before: 710100 No. 388, Hangtian Middle Road, Chang'an District, Xi'an City, Shaanxi Province Patentee before: LONGI GREEN ENERGY TECHNOLOGY Co.,Ltd. Patentee before: WUXI LONGI SILICON MATERIALS Corp. Patentee before: NINGXIA LONGI SILICON MATERIALS Co.,Ltd. Patentee before: YINCHUAN LONGI SILICON MATERIALS Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130619 Termination date: 20211119 |