CN203200378U - Argon circulation impurity discharge device of polycrystalline silicon ingot furnace - Google Patents
Argon circulation impurity discharge device of polycrystalline silicon ingot furnace Download PDFInfo
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- CN203200378U CN203200378U CN 201320139697 CN201320139697U CN203200378U CN 203200378 U CN203200378 U CN 203200378U CN 201320139697 CN201320139697 CN 201320139697 CN 201320139697 U CN201320139697 U CN 201320139697U CN 203200378 U CN203200378 U CN 203200378U
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- argon
- argon gas
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- cover plate
- heat preservation
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Abstract
The utility model relates to an argon circulation impurity discharge device of a polycrystalline silicon ingot furnace. The argon circulation impurity discharge device consists of an upper heat preservation frame and a lower heat preservation frame of a C-C heat field, argon conduits, a quartz crucible, an argon flow guide plate, a flow retaining cover plate and a main argon flow guide cylinder, wherein a sealed controllable heat field is formed by the upper heat preservation frame and the lower heat preservation frame; the argon flow guide plate and the flow retaining cover plate are fixed on the upper heat preservation frame by bolts at one step; the periphery of each heat preservation frame is provided with twenty four argon conduits; a graphite protective plate and the quartz crucible are arranged on the lower heat preservation frame in a combination way; the main argon flow guide cylinder is arranged in the middle of the top of the upper heat preservation frame; the bottom of the main argon flow guide cylinder is in a shape of an opening. During a smelting stage of a silicon material, a large amount of impurity gas is volatilized from the surface of liquid silicon due to convection; after the silicon material is smelted completely, the surface of the liquid silicon is about 20cm to an argon cover plate and the argon pressure is 4-5bar; argon enters the heat field from the main argon flow guide cylinder and then is rapidly and evenly diffused to around after achieving the surface of the liquid silicon so as to blow the surface of the liquid silicon for once; afterwards, the impurities are carried by the argon to upwards move to the flow retaining cover plate; under the combined actions of the argon flow guide plate and the flow retaining cover plate, the argon is discharged through the argon conduits; finally the argon is pumped out of a furnace chamber by a vacuum pump, thereby achieving the purpose of carrying away the impurities.
Description
One, technical field
The utility model relates to a kind of polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus.
Two, background technology
At present; argon gas circulation impurities removal system in the existing polycrystalline silicon ingot or purifying furnace vacuum system mainly comprises: insulation thermal field, argon gas inlet mouth, heat-insulation cage, argon gas air outlet; extracted out by vacuum pump at last, this structure design mainly plays the single effect as shielding gas in the stove and heat exchange.This system is mainly sought in operational process in defective aspect two once:
The first, argon gas export and entrance location arrange unreasonable, cause argon gas that silicon liquid surface is purged repeatedly, influence argon gas impurities removal effect.
Second, because the crucible in long brilliant stage moves, and the variation of the relative position of argon gas air outlet different time sections, closed loop flow path after causing argon gas by thermal field top arrival silicon liquid surface changes, silicon liquid surface is purged repeatedly, make impurity enter silicon liquid again, perhaps argon gas does not directly reach the best effect of taking away impurity through the argon gas export discharge.
Three, the content of utility model
The purpose of this utility model is to provide a kind of polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus, can only be as shielding gas to solve argon gas, can only heat exchange, and can not take away well impurity technical problem.
The purpose of this utility model is achieved in that polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus, on the C-C thermal field, under be incubated frame, the argon gas conduit, quartz crucible, the argon gas flow deflector, the baffle cover plate, argon gas major flow tube constitutes, the enclosed and controllable temperature field that the C-C thermal field is made up of last insulation frame and following insulation frame, argon gas flow deflector and baffle cover plate one-time fix on insulation frame on the C-C thermal field by the C-C bolt, around C-C thermal field insulation frame, be respectively equipped with the argon gas conduit, an end of argon gas conduit is installed in the middle of argon gas flow deflector and the baffle cover plate, be incubated outside the frame in the other end break-through, graphite backplate and quartz crucible combination place and are incubated under the C-C thermal field on the frame, and argon gas major flow tube places insulation arch central position on the C-C thermal field, and the bottom is opening-like, described argon gas conduit is a siphunculus, be distributed on around C-C thermal field insulation frame 6 in each face, totally 24.
It mainly solves following problem the utility model: one, increase argon gas flow deflector and baffle cover plate, the correct guidance argon gas flows out from thermal field, avoids argon gas to enter bottom thermal field secondary circulation in thermal field, makes more impurity enter silicon liquid.Two, special thermal field structure designs, and at C-C thermal field insulation frame four sides 24 argon gas conduits is set evenly, makes the interior argon gas circulation of thermal field more even, realizes temperature of thermal field control better.
The utility model mainly is incubated frame, argon gas conduit, quartz crucible, argon gas flow deflector, baffle cover plate, argon gas major flow tube up and down by the C-C thermal field and constitutes.In the silicon material fusion stage, silicon liquid is because convection action volatilizes a large amount of foreign gases in the surface, the silicon material dissolves back silicon liquid surface distance argon gas cover plate distance fully and is about 20cm, argon pressure is 4～5bar, argon gas from argon gas major flow tube enter thermal field arrive behind the silicon liquid surface rapidly evenly to around diffusion, silicon liquid surface is once purged, carry foreign gas then and move upward to the baffle cover plate, get rid of from the argon gas conduit through argon gas flow deflector and the acting in conjunction of baffle cover plate, extracted out furnace chamber by vacuum pump at last, reach the purpose of taking away impurity.
The beneficial effects of the utility model are; can prevent the oxidation of silicon material as shielding gas at argon gas; make when carrying out heat exchange in the stove to reach temperature controlled effect, can take away the impurity that volatilizes in the molten silicon effectively, make the silicon material can better purify and grow crystalline substance.
The utility model mainly contains following characteristics:
1, at C-C thermal field insulation frame argon gas flow deflector and baffle cover plate are housed, guide argon gas from the argon gas conduit, to flow out jointly, avoid taking place argon gas secondary circulation and pollute the silicon material, prevent from simultaneously that foreign gas from entering to be incubated the frame pollution up and down and to be incubated frame and well heater up and down.
2, argon gas flow deflector and baffle cover plate all use high-purity isostatic pressing formed graphite material, avoid using carbon felt and C-C material, prevent because its material ageing causes the silicon material to pollute.
3, at C-C thermal field insulation frame four sides, in the middle of argon gas flow deflector and the baffle cover plate, being respectively equipped with internal diameter is the argon gas conduit of 28mm, 6 every, be evenly distributed, increase the homogeneity of argon gas circulation in the C-C thermal field, reduce argon gas to heat flow density in the thermal field and temperature controlled influence.
Four, description of drawings
Accompanying drawing 1 is structure sectional view of the present utility model;
Accompanying drawing 2 is argon gas baffle structure of cover plate synoptic diagram of the present utility model;
Accompanying drawing 3 is structural representations of argon gas water conservancy diversion of the present utility model;
Accompanying drawing 4 is structural representations of argon gas conduit of the present utility model;
Among the figure: the last insulation of 1---frame, 2---argon gas conduit, 3---graphite backplate is incubated frame under the 4---quartz crucible, 5---, 6---argon gas flow deflector, 7---baffle cover plate, 8---argon gas major flow tube.
Five, embodiment
Come the utility model is done furtherly carefully description below in conjunction with drawings and Examples.
With reference to accompanying drawing, the utility model polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus, by on the C-C thermal field 1, under be incubated frame 5, argon gas conduit 2, graphite backplate 3, quartz crucible 4, argon gas flow deflector 6, baffle cover plate 7, argon gas major flow tube 8 constitutes, and the C-C thermal field is by last insulation frame 1 and be incubated the enclosed and controllable temperature field that frame 5 is formed down, argon gas flow deflector 6 one-time fixes on insulation frame 1 on the C-C thermal field by the C-C bolt with baffle cover plate 7, around C-C thermal field insulation frame 1, be respectively equipped with argon gas conduit 2, it is middle with baffle cover plate 7 that an end of argon gas conduit 2 is installed in argon gas flow deflector 6, insulation frame 1 in the other end break-through, graphite backplate 3 places with quartz crucible 4 combinations and is incubated under the C-C thermal field on the frame 5, and argon gas major flow tube 8 places insulation frame 1 top center position on the C-C thermal field, and the bottom is opening-like; Described argon gas conduit 2 is a siphunculus, is distributed on around C-C thermal field insulation frame 16 in each face, totally 24.
1 time insulation frame 5 on the C-C thermal field, argon gas conduit 2, graphite backplate 3, quartz crucible 4, argon gas flow deflector 6, baffle cover plate 7 with argon gas circulation flow path in the argon gas major flow tube 8 common formation thermal fields, makes argon gas circulation better, to solve the impurities removal problem;
Argon gas flow deflector 6 and baffle cover plate 7 by C-C angle steel shape material and bolting in being incubated on the C-C thermal field on the frame 1, prevent jointly with graphite backplate 3 combination that gas from entering and be incubated frame up and down and pollute and be incubated frame and well heater up and down that argon gas flow deflector 6 all uses high-purity isostatic pressing formed graphite material with baffle cover plate 7.
24 argon gas conduits 2 be evenly distributed on insulation frame 1 on the C-C thermal field around, high-purity isostatic pressing formed graphite material is adopted in the position in the middle of argon gas flow deflector 6 and baffle cover plate 7, argon gas and foreign gas are discharged from the argon gas airway, at last by vacuum pump extraction body of heater.
Claims (2)
1. polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus, it comprises: on the C-C thermal field (1), under be incubated frame (5), argon gas conduit (2), graphite backplate (3), quartz crucible (4), argon gas flow deflector (6), baffle cover plate (7), argon gas major flow tube (8), it is characterized in that: the enclosed and controllable temperature field that the C-C thermal field is made up of last insulation frame (1) and following insulation frame (5), argon gas flow deflector (6) one-time fixes in being incubated on the C-C thermal field on the frame (1) by the C-C bolt with baffle cover plate (7), around C-C thermal field insulation frame (1), be respectively equipped with argon gas conduit (2), it is middle with baffle cover plate (7) that one end of argon gas conduit (2) is installed in argon gas flow deflector (6), is incubated frame (1) in the other end break-through, and graphite backplate (3) places with quartz crucible (4) combination and is incubated under the C-C thermal field on the frame (5), argon gas major flow tube (8) places and is incubated frame (1) top center position on the C-C thermal field, and the bottom is opening-like.
2. polycrystalline silicon ingot or purifying furnace argon gas circulation trash discharging apparatus according to claim 1, it is characterized in that: argon gas conduit (2) is a siphunculus, be distributed on the C-C thermal field be incubated frame (1) around, 6 in each face, totally 24.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320139697 CN203200378U (en) | 2013-03-11 | 2013-03-11 | Argon circulation impurity discharge device of polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320139697 CN203200378U (en) | 2013-03-11 | 2013-03-11 | Argon circulation impurity discharge device of polycrystalline silicon ingot furnace |
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| Publication Number | Publication Date |
|---|---|
| CN203200378U true CN203200378U (en) | 2013-09-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320139697 Expired - Fee Related CN203200378U (en) | 2013-03-11 | 2013-03-11 | Argon circulation impurity discharge device of polycrystalline silicon ingot furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590103A (en) * | 2013-10-24 | 2014-02-19 | 江苏大学 | Argon guide system and argon guide method for polycrystalline silicon ingot furnace |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
| CN107385511A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN117431628A (en) * | 2023-12-21 | 2024-01-23 | 内蒙古沐邦新材料有限公司 | Ingot single crystal thermal field device |
-
2013
- 2013-03-11 CN CN 201320139697 patent/CN203200378U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590103A (en) * | 2013-10-24 | 2014-02-19 | 江苏大学 | Argon guide system and argon guide method for polycrystalline silicon ingot furnace |
| CN103590103B (en) * | 2013-10-24 | 2016-04-27 | 江苏大学 | A kind of polycrystalline silicon ingot or purifying furnace argon gas flow guide system and method for river diversion thereof |
| CN105483819A (en) * | 2016-01-26 | 2016-04-13 | 中山大学 | Convection control device for czochralski method crystal growth and crystal growing furnace |
| CN105483819B (en) * | 2016-01-26 | 2017-12-05 | 中山大学 | A kind of controlling convection and crystal growing furnace for method of crystal growth by crystal pulling |
| CN107385511A (en) * | 2016-02-03 | 2017-11-24 | 陈鸽 | A kind of polycrystalline silicon ingot or purifying furnace with guiding device |
| CN117431628A (en) * | 2023-12-21 | 2024-01-23 | 内蒙古沐邦新材料有限公司 | Ingot single crystal thermal field device |
| CN117431628B (en) * | 2023-12-21 | 2024-03-05 | 内蒙古沐邦新材料有限公司 | Ingot single crystal thermal field device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20200311 |
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| CF01 | Termination of patent right due to non-payment of annual fee |