CN116334740B - Single crystal furnace and oxygen reduction method thereof - Google Patents
Single crystal furnace and oxygen reduction method thereof Download PDFInfo
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- CN116334740B CN116334740B CN202310627350.XA CN202310627350A CN116334740B CN 116334740 B CN116334740 B CN 116334740B CN 202310627350 A CN202310627350 A CN 202310627350A CN 116334740 B CN116334740 B CN 116334740B
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- crucible
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- single crystal
- heater
- furnace
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 239000001301 oxygen Substances 0.000 title claims abstract description 100
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 100
- 239000013078 crystal Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 112
- 229910052786 argon Inorganic materials 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 238000004321 preservation Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 18
- 238000001179 sorption measurement Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 229920000297 Rayon Polymers 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 description 26
- 238000009413 insulation Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the application provides a single crystal furnace and an oxygen reduction method of the single crystal furnace, and relates to the technical field of single crystal furnaces. The single crystal furnace comprises a furnace body, a crucible, a heater, a heat preservation cylinder, an argon supply device and an oxygen inhalation device, wherein the heat preservation cylinder is arranged in the furnace body, the crucible is arranged in the heat preservation cylinder, the crucible is used for containing silicon liquid, and the heater is arranged in the furnace body so as to heat the crucible; the argon supply device is arranged on the furnace body so as to introduce argon into the crucible; the oxygen inhalation device is arranged in the furnace body and is used for adsorbing oxygen in the crucible, and the oxygen inhalation device can reduce the oxygen content in the crucible on the basis of not reducing the height of the heating ring.
Description
Technical Field
The application relates to the technical field of single crystal furnaces, in particular to a single crystal furnace and an oxygen reduction method of the single crystal furnace.
Background
In the current process of drawing a monocrystalline silicon rod, in order to meet the electrical performance requirement of the crystal rod, a high-quality silicon single crystal is provided, and the oxygen content is taken as an important assessment index. However, with the development of industry, large-size silicon single crystals have become the mainstream, and the high oxygen content does not restrict the development of industry, which affects the profit of enterprises.
The principle of the heater is that heat is provided by the heating ring, the heat is radiated to the crucible, silicon materials are contained in the crucible, and the silicon materials are melted by the heat and then placed into seed crystals for crystal growth; the crucible is a main source of oxygen content of the silicon single crystal, so that the release of oxygen impurities can be reduced by reducing the heat radiation range of the heater to the crucible, thereby reducing the concentration of oxygen impurities entering the single crystal silicon rod.
The existing single crystal furnace thermal field is to obtain a single crystal silicon rod with relatively low oxygen content by continuously reducing the height of a heating ring of a heater, but the following problems exist in reducing the height of the heating ring of the heater: first, the heater needs to bear a larger current to achieve the same heat as the original high heating coil, and the service life of the heater is shortened. Secondly, the silicon crystal growth needs a relatively stable thermal field environment, the longitudinal gradient is not excessive, if the height of the heating ring is reduced, the heating area is concentrated, the longitudinal temperature gradient becomes large, crystal dislocation defects are easily caused, and the crystal yield and quality of the silicon single crystal are affected.
Disclosure of Invention
The object of the present application includes, for example, providing a single crystal furnace capable of reducing the oxygen content in a crucible without reducing the height of a heating coil.
The application further aims to provide an oxygen reduction method of the single crystal furnace, which can reduce the oxygen content in the crucible on the basis of not reducing the height of the heating ring.
Embodiments of the application may be implemented as follows:
the embodiment of the application provides a single crystal furnace, which comprises a furnace body, a crucible, a heater, a heat preservation cylinder, an argon supply device and an oxygen inhalation device, wherein the heat preservation cylinder is arranged in the furnace body, the crucible is arranged in the heat preservation cylinder, the crucible is used for containing silicon liquid, and the heater is arranged in the furnace body so as to heat the crucible; the argon supply device is arranged on the furnace body so as to introduce argon into the crucible; the oxygen inhalation device is arranged in the furnace body and is used for adsorbing oxygen in the crucible.
Optionally, an exhaust pipeline is arranged on the furnace body, and a main pump is arranged on the exhaust pipeline; the oxygen inhalation device comprises a sucker and a pipeline, wherein the sucker is communicated with the pipeline, the sucker is arranged above the crucible, and the pipeline is communicated with the exhaust pipeline.
Optionally, the sucking disc is annular, the sucking disc is towards the surface of crucible has seted up a plurality of absorption holes.
Optionally, the hole diameter of the adsorption hole on the sucker, which is close to the pipeline, is smaller than the hole diameters of the rest adsorption holes.
Optionally, the ratio of the aperture of the adsorption hole on the sucker, which is close to the pipeline, to the aperture of the rest of the adsorption holes is 1:1.5.
Optionally, a mass flowmeter is arranged on the pipeline to control the gas flow rate in the pipeline.
Optionally, the height of the heating coil of the heater is greater than or equal to 260mm.
Optionally, the material of the heat preservation cylinder at least comprises viscose-based graphite felt.
The embodiment of the application also provides an oxygen reduction method of the single crystal furnace, which is applied to the single crystal furnace; the oxygen reduction method of the single crystal furnace comprises the following steps:
activating the heater to heat the crucible;
and adjusting the argon flow rate of the argon supply device to be 80slpm and the gas flow rate of the oxygen absorption device to be 120slpm so as to absorb oxygen in the crucible.
Optionally, the step of activating the heater to heat the crucible includes:
the power of the heater is adjusted to 55-75kw to heat the crucible, and then the power of the heater is reduced to 40-60kw to reduce the heat radiation of the heater to the crucible.
The monocrystalline furnace and the oxygen reduction method thereof have the beneficial effects that: when the heater is utilized to heat the crucible, oxygen impurities can be generated in the crucible, argon is supplied into the crucible through the argon supply device, the argon carries the oxygen impurities to float in the crucible, and meanwhile, the oxygen device is utilized to adsorb mixed gas of oxygen and argon in the crucible, so that most of oxygen in the crucible is removed, and the oxygen content in the crucible is reduced on the basis of not reducing the height of the heating ring.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a cross-sectional view of a single crystal furnace in an embodiment of the present application;
FIG. 2 is a schematic diagram of an oxygen inhalation device according to an embodiment of the present application;
FIG. 3 is a flow chart of a method for reducing oxygen in a single crystal furnace according to an embodiment of the application.
Icon: 100-furnace body; 110-argon inlet; 200-crucible; 300-a heater; 400-heat preservation cylinder; 500-an oxygen inhalation device; 510-sucking disc; 511-adsorption holes; 520-pipe.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
The inventor of the application discovers that the high oxygen content of the current monocrystalline silicon rod does not restrict the industry development in the drawing process, the existing monocrystalline furnace thermal field is to continuously reduce the height of a heating ring of a heater to obtain the monocrystalline silicon rod with relatively low oxygen content, but the following problems exist in reducing the height of the heating ring of the heater: first, the heater needs to bear a larger current to achieve the same heat as the original high heating coil, and the service life of the heater is shortened. Secondly, the silicon crystal growth needs a relatively stable thermal field environment, the longitudinal gradient is not excessive, if the height of the heating ring is reduced, the heating area is concentrated, the longitudinal temperature gradient becomes large, crystal dislocation defects are easily caused, and the crystal yield and quality of the silicon single crystal are affected. Embodiments of the present application provide a single crystal furnace capable of reducing the oxygen content in a crucible without reducing the height of a heating coil.
Referring to fig. 1 and 2, a single crystal furnace provided by an embodiment of the present application includes a furnace body 100, a crucible 200, a heater 300, a heat insulation cylinder 400, an argon supply device (not shown) and an oxygen inhalation device 500, wherein the heat insulation cylinder 400 is disposed in the furnace body 100, the crucible 200 is disposed in the heat insulation cylinder 400, the crucible 200 is used for containing silicon liquid therein, and the heater 300 is disposed in the furnace body 100 to heat the crucible 200; the argon supply device is arranged on the furnace body 100 to introduce argon into the crucible 200; the oxygen inhalation device 500 is disposed in the furnace body 100 for adsorbing oxygen in the crucible 200.
It should be noted that the heater 300 is disposed around the crucible 200 to heat the crucible 200 in the circumferential direction; the argon supply device comprises an argon storage device, a conveying pump and a conveying pipeline, wherein the argon storage device is connected with the conveying pipeline, the conveying pump is arranged on the conveying pipeline, the argon storage device, the conveying pump and the conveying pipeline are arranged outside the furnace body 100, an argon opening 110 is formed in the top of the furnace body 100, the conveying pipeline is communicated with the argon opening 110, and the argon opening 110 faces the crucible 200.
When the heater 300 is used for heating the crucible 200, oxygen impurities are generated in the crucible 200, at the moment, argon in the argon storage device is supplied into the crucible 200 through the argon inlet 110 by a conveying pump, the argon carries oxygen impurities to float in the crucible 200, and meanwhile, the oxygen impurities carried by the argon in the crucible 200 are adsorbed by the oxygen inhaler 500, so that most of oxygen in the crucible 200 is removed, the oxygen content in the crucible 200 is reduced on the basis of not reducing the height of a heating ring of the heater 300, and the silicon single crystal yield and quality are improved.
In an alternative embodiment, the furnace body 100 is provided with an exhaust pipeline, and the exhaust pipeline is provided with a main pump; the oxygen inhalation device 500 comprises a sucker 510 and a pipeline 520, wherein the sucker 510 is communicated with the pipeline 520, the sucker 510 is arranged above the crucible 200, and the pipeline 520 is communicated with an exhaust pipeline.
Wherein, the exhaust pipe is arranged at the bottom of the furnace body 100, one end of a pipeline 520 in the oxygen inhalation device 500 is communicated with the sucker 510, and the other end is communicated with the exhaust pipe; the suction cup 510 is disposed above the crucible 200 and is capable of sucking most of the oxygen in the crucible 200.
In the embodiment of the present application, two pipes 520 are symmetrically provided, and one end of the two pipes 520, which is far from the suction cup 510, is communicated with the exhaust pipe, so that oxygen generated in the crucible 200 can be rapidly adsorbed through the two pipes 520.
In an alternative embodiment, the suction cup 510 is ring-shaped, and the suction cup 510 is provided with a plurality of suction holes 511 toward the surface of the crucible 200.
It should be noted that, the inside of the suction cup 510 is hollow, the annular surface of the suction cup 510 is approximately parallel to the surface of the silicon liquid in the crucible 200, the suction cup 510 is provided with a plurality of suction holes 511 towards the surface of the crucible 200, the suction holes 511 are uniformly arranged at intervals, and the suction holes 511 can absorb oxygen at various positions above the crucible 200, so that the oxygen absorption efficiency is improved.
Wherein, the aperture of the suction hole 511 on the suction cup 510 near the pipeline 520 is smaller than the aperture of the rest suction holes 511.
It should be noted that, one end of the pipe 520 is connected to the upper surface of the suction cup 510 and is in communication with the interior of the suction cup 510, the suction hole 511 on the suction cup 510 near the pipe 520 is the suction hole 511 closest to the end of the pipe 520 connected to the upper surface of the suction cup 510, and one or more suction holes 511 may be provided.
Optionally, the ratio of the aperture of the suction holes 511 on the suction cup 510 near the pipe 520 to the aperture of the remaining suction holes 511 is 1:1.5.
Since the position near the pipe 520 is the position in the crucible 200 where the gas vortex is most likely to be formed, by limiting the ratio of the aperture of the adsorption hole 511 near the pipe 520 to the aperture of the rest of the adsorption holes 511 on the suction cup 510, the aperture of the adsorption hole 511 near the pipe 520 on the suction cup 510 is smaller than the aperture of the rest of the adsorption holes 511, i.e. the aperture of the adsorption hole 511 near the pipe 520 is reduced to increase the negative pressure therein, thereby improving the oxygen impurity adsorption capacity, further realizing more uniform discharge of the gas on the surface of the silicon liquid and improving the component uniformity of the silicon liquid.
In an alternative embodiment, a mass flow meter is provided on the conduit 520 to control the flow rate of the gas within the conduit 520.
Because the crucible 200 is subjected to heat radiation of the heater 300 to generate oxygen impurities, the oxygen impurities float on the surface of the silicon solution, the argon blowing device blows argon into the crucible 200, the oxygen impurities carrying the surface of the silicon solution float circularly in the crucible 200, a part of the oxygen impurities carried by the argon float in the crucible 200, a part of the oxygen impurities carried by the argon form vortex in the crucible 200, the oxygen impurities can enter the silicon solution circularly again, at the moment, the main pump is started to suck air from the pipeline 520, the mass flowmeter controls the sucking speed, the sucking disc 510 sucks the gas on the surface of the silicon solution, on one hand, the oxygen impurities in the gas are taken away, on the other hand, the gas vortex existing in the crucible 200 is eliminated, and the oxygen impurities are reduced from being recycled into the silicon solution again; the gas flow rate in the control pipeline 520 can effectively take away the gas vortex formed in the crucible 200, prevent oxygen impurities carried by argon from entering the crucible 200 again, and reduce the concentration of the oxygen impurities in the silicon liquid.
Optionally, the heater 300 has a heat coil height greater than or equal to 260mm.
The heater 300 is limited to a height of 260mm or more, and the heater 300 is limited to a high range, and the heater 300 is not reduced in height, so that the hot zone is not concentrated, the longitudinal temperature gradient is increased, crystal dislocation defects are not easily caused, the crystal yield and quality of the silicon single crystal are not easily affected, and the service life of the heater 300 is not easily shortened.
The heater 300 with the height of the heating ring being more than or equal to 260mm is used, so that the crystal yield of silicon crystals is improved, a proper longitudinal temperature gradient is provided for a silicon crystal growth thermal field, the heating area of the longitudinal temperature thermal field is controlled to be 260-350 mm, the silicon crystal growth environment is optimal in the range, the unit cells are orderly arranged, and the crystal yield is improved.
Optionally, the material of the thermal cylinder 400 includes at least a viscose-based graphite felt.
It should be noted that, the thermal insulation cylinder 400 is made of the viscose graphite felt with higher thermal insulation performance, so that the bottom of the furnace body 100 can be kept at a higher temperature all the time, when the heater 300 heats, the bottom temperature of the furnace body 100 reaches 1000-1250 ℃, at this time, the temperature difference between the bottom of the furnace body 100 and the liquid level temperature of the silicon liquid in the crucible 200 is smaller, the phenomenon of convection of the melt is not easy to generate in the crucible 200, the oxygen-containing vortex on the surface of the silicon liquid is reduced to enter the silicon liquid, and the oxygen content of the silicon single crystal is reduced.
Optionally, the bottom of the furnace body 100 is carbon Tao Caizhi.
It should be noted that, the bottom of the furnace body 100 is provided with the electrode sheath, the exhaust funnel, the center shaft sheath, and other components, and the electrode sheath, the exhaust funnel, the center shaft sheath, and other components use the carbon Tao Caizhi with lower thermal conductivity, so that heat loss from the bottom of the furnace body 100 can be avoided to a certain extent.
Referring to fig. 3, the embodiment of the application further provides a method for reducing oxygen in the single crystal furnace, which is applied to the single crystal furnace.
The oxygen reduction method of the single crystal furnace comprises the following steps:
step S1, the heater 300 is activated to heat the crucible 200.
When the heater 300 is activated to heat the crucible 200, oxygen impurities floating above the crucible 200 are generated in the crucible 200.
Wherein, step S1 includes:
substep S11, adjusting the power of the heater 300 to 55-75kw to heat the crucible 200, and then reducing the power of the heater 300 to 40-60kw to reduce the heat radiation of the heater 300 to the crucible 200.
When the power of the heater 300 is adjusted to 55-75kw, the crucible 200 can be heated, the temperature in the furnace body 100 can be quickly raised, the temperature in the furnace body 100 can be maintained at a higher temperature by the heat-preserving cylinder 400 made of the viscose-based graphite felt with higher heat-preserving performance, the power of the heater 300 is reduced to 40-60kw, the heat radiation of the heater 300 to the crucible 200 is reduced, and then the generation of oxygen can be reduced.
In step S2, the argon flow rate of the argon supplying device is adjusted to 80slpm, and the gas flow rate of the oxygen absorbing device 500 is adjusted to 120slpm, so as to absorb oxygen in the crucible 200.
When the single crystal furnace starts to operate to pull crystal, oxygen impurities are enriched on the silicon liquid level, argon is supplied into the crucible 200 through the argon supply device, the argon with the flow rate of 80slpm floats in the crucible 200, meanwhile, the main pump is started to suck air from the pipeline 520, the mass flowmeter controls the air flow rate in the pipeline 520 to be 120slpm, the pressure in the sucker 510 is instantaneously reduced, a negative pressure area is generated outside the sucker 510, at the moment, the negative pressure area is generated at the sucker 510, the oxygen impurities carried by the argon in the crucible 200 are sucked into the sucker 510 and finally discharged out of the furnace, the concentration of the oxygen impurities in the silicon liquid is reduced, the crystal quality and the crystal survival rate are improved, and the problems of crystal bar distortion, broken crystal pulling and the like in the process are avoided by limiting the air flow rate of the argon flow rate and the oxygen inhalation device 500.
The argon flow rate of 80slpm is preferable, and is larger than the argon flow rate, so that the argon flows too much, the solid-liquid interface is excessively cooled, the problems of uneven local temperature, easy crystal bar distortion and the like are increased, and the argon flow rate is smaller than the argon flow rate, the cooling capacity is insufficient, crystallization is affected, and the line is easily broken; the flow rate of the gas in the pipeline 520 matched with the suction cup 510 is preferably 120slpm, if the flow rate of the gas in the pipeline 520 is too high, the local negative pressure is too high, so that the local silicon liquid melt is influenced by the negative pressure to rise, the melt temperature distribution is influenced, the melt temperature is uneven, and the crystal bar is easy to twist; if the flow rate of the gas in the pipe 520 is too small, the removal of oxygen impurities is incomplete, and the oxygen reduction purpose cannot be achieved.
In summary, the embodiment of the application provides a single crystal furnace and an oxygen reduction method for the single crystal furnace, when the crucible 200 is heated by the heater 300, oxygen impurities are generated in the crucible 200, argon is supplied into the crucible 200 through the argon supply device, the argon carries oxygen impurities to float in the crucible 200, and meanwhile, the oxygen impurities carried by the argon in the crucible 200 are adsorbed through the oxygen inhalation device 500, so that most of oxygen in the crucible 200 is removed, the oxygen content in the crucible 200 is reduced on the basis of not reducing the height of a heating ring of the heater 300, and the silicon single crystal yield and quality are improved.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (5)
1. The single crystal furnace is characterized by comprising a furnace body, a crucible, a heater, a heat preservation cylinder, an argon supply device and an oxygen inhalation device, wherein the heat preservation cylinder is arranged in the furnace body, the crucible is arranged in the heat preservation cylinder, the crucible is used for containing silicon liquid, and the heater is arranged in the furnace body so as to heat the crucible; the argon supply device is arranged on the furnace body so as to introduce argon into the crucible; the oxygen inhalation device is arranged in the furnace body and is used for adsorbing oxygen in the crucible;
an exhaust pipeline is arranged on the furnace body, and a main pump is arranged on the exhaust pipeline; the oxygen inhalation device comprises a sucker and a pipeline, wherein the sucker is communicated with the pipeline, the sucker is arranged above the crucible, and the pipeline is communicated with the exhaust pipeline;
the sucking disc is annular, and a plurality of sucking holes are formed in the surface of the sucking disc facing the crucible;
the aperture of the adsorption hole, which is close to the pipeline, on the sucker is smaller than the aperture of the rest adsorption holes;
the height of the heating ring of the heater is larger than or equal to 260mm;
the inside of the sucker is hollow, the annular surface of the sucker is parallel to the surface of the silicon liquid in the crucible, and when the single crystal furnace starts to operate for pulling crystal, the oxygen inhalation device is positioned in the crucible;
the argon flow rate of the argon supply device is 80slpm, and the gas flow rate of the oxygen absorbing device is 120slpm, so as to absorb oxygen in the crucible.
2. The single crystal growing furnace of claim 1, wherein the ratio of the aperture of the suction holes on the suction cup near the pipe to the aperture of the remaining suction holes is 1:1.5.
3. The single crystal furnace of claim 1, wherein a mass flow meter is provided on the conduit to control the flow rate of gas within the conduit.
4. The single crystal growing furnace of claim 1 wherein the material of the insulating cylinder comprises at least a viscose-based graphite felt.
5. An oxygen reduction method for a single crystal furnace, which is applied to the single crystal furnace according to any one of claims 1 to 4; the single crystal furnace comprises a furnace body, a crucible, a heater, a heat preservation cylinder, an argon supply device and an oxygen inhalation device, wherein the oxygen inhalation device comprises a sucker and a pipeline, the interior of the sucker is arranged in a hollow mode, the annular surface of the sucker is parallel to the surface of silicon liquid in the crucible, and when the single crystal furnace starts to operate to pull crystal, the oxygen inhalation device is positioned in the crucible;
the oxygen reduction method of the single crystal furnace comprises the following steps:
activating the heater to heat the crucible;
the argon flow rate of the argon supply device is regulated to be 80slpm, and the gas flow rate of the oxygen absorbing device is regulated to be 120slpm, so as to absorb oxygen in the crucible;
the step of activating the heater to heat the crucible includes:
the power of the heater is adjusted to 55-75kw to heat the crucible, and then the power of the heater is reduced to 40-60kw to reduce the heat radiation of the heater to the crucible.
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| CN202310627350.XA CN116334740B (en) | 2023-05-31 | 2023-05-31 | Single crystal furnace and oxygen reduction method thereof |
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| CN202310627350.XA CN116334740B (en) | 2023-05-31 | 2023-05-31 | Single crystal furnace and oxygen reduction method thereof |
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| CN116334740B true CN116334740B (en) | 2023-09-05 |
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| CN111676512A (en) * | 2020-06-09 | 2020-09-18 | 山西潞安太阳能科技有限责任公司 | Method for reducing oxygen content in crystal bar of upper-exhaust single crystal furnace |
| CN114457411A (en) * | 2021-12-31 | 2022-05-10 | 隆基绿能科技股份有限公司 | Method and device for pulling single crystal silicon rod |
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| CN218989462U (en) * | 2022-12-22 | 2023-05-09 | 江苏协鑫硅材料科技发展有限公司 | Oxygen reduction device and single crystal furnace thermal field with same |
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| TWI403461B (en) * | 2010-07-21 | 2013-08-01 | Masahiro Hoshino | Method and apparatus for improving yield and yield of metallurgical silicon |
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| CN101319352A (en) * | 2008-06-26 | 2008-12-10 | 常州中弘光伏有限公司 | Vertical pulling type single crystal growth furnace |
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| CN114457411A (en) * | 2021-12-31 | 2022-05-10 | 隆基绿能科技股份有限公司 | Method and device for pulling single crystal silicon rod |
| CN218262821U (en) * | 2022-10-27 | 2023-01-10 | 宇泽半导体(云南)有限公司 | Thermal field capable of reducing oxygen content of single crystal |
| CN219044980U (en) * | 2022-12-05 | 2023-05-19 | 乐山市京运通新材料科技有限公司 | Czochralski monocrystalline silicon oxygen reduction thermal field device and monocrystalline furnace |
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