CN202139324U - Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace - Google Patents
Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace Download PDFInfo
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- CN202139324U CN202139324U CN201120242599U CN201120242599U CN202139324U CN 202139324 U CN202139324 U CN 202139324U CN 201120242599 U CN201120242599 U CN 201120242599U CN 201120242599 U CN201120242599 U CN 201120242599U CN 202139324 U CN202139324 U CN 202139324U
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Abstract
The utility model discloses a graphite thermal field system of an upward-exhausting thermal field type czochralski silicon mono-crystal furnace. The graphite thermal field system comprises a main heat-insulating cylinder, a quartz crucible, a graphite crucible, a crucible support, a support rod, a heater, a graphite electrode, and a flow guide cylinder, wherein the main heat-insulating cylinder is arranged in a main furnace chamber of the mono-crystal furnace; the quartz crucible is positioned on the middle part inside the main heat-insulating cylinder; the graphite crucible is sleeved out of the quartz crucible; the crucible support arranged at the bottom part of the graphite crucible; the support rod is arranged below the crucible support; the heater and the graphite electrode are arranged below the quartz crucible for heating the quartz crucible; the guide cylinder is arranged over the quartz crucible; the upper part and the lower part of the main heat-insulating cylinder are respectively provided with an upper heat-insulating cylinder and a lower heat-insulating cylinder; the lower heat-insulating cylinder is a heat-insulating cylinder with sealed sidewalls; and the sidewall of the upper heat-insulating cylinder is provided with upper exhaust holes. The graphite thermal field system is reasonable in design, low in investment cost, low in energy consumption, convenient to implement, simple and convenient to use and operate, good in use effect, greatly prolongs the service life of the thermal field system and reduces production cost, and simultaneously can improve the production efficiency of monocrystal silicon.
Description
Technical field
The utility model relates to a kind of graphite thermal field system, especially relates to a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up.
Background technology
Silicon single crystal is claimed silicon single-crystal again, is a kind of semiconductor material.Single crystal growing furnace is a kind of in inert gas environment, with graphite heater with polycrystalline materials such as polysilicon fusings, and with the equipment of Grown by CZ Method dislocation-free silicon single crystal.Single crystal growing furnace mainly comprises frame, crucible drive unit, main furnace chamber, flap valve, secondary furnace chamber, seed crystal lifting mechanism, fluid pressure drive device, vacuum system, towards argon system and water-cooling system.Wherein main furnace chamber top and flap valve are tightly connected, and secondary furnace chamber is placed on the flap valve, and main furnace chamber is the cardia of single crystal growing furnace, and thermal field system is installed in the main furnace chamber.
Traditional thermal field system adopts method for exhausting down; Specifically be to pass through fusion silicon liquid level, well heater again after getting into heat shielding as the argon gas of shielding gas by secondary furnace chamber top; The venting hole of finally being offered from the stay-warm case down gets into gas exhaust duct, and is detached by main furnace chamber vacuum pump.But; When adopting the thermal field system of this kind exhaust mode to draw silicon single-crystal; After the silicon single-crystal drawing finished, a large amount of volatile matters that in the silicon single-crystal pulling process, produce will hot system cause great pollution to the graphite in the single crystal growing furnace, if these are cleaned out attached to the volatile matter on the graphite thermal field system is untimely; Not only can influence the interior quality of next stove silicon single-crystal, and very easily cause can't Cheng Jing serious consequence.And above-mentioned volatile matter is difficult to cleaning thoroughly in scale removal process; While is along with the continuous increase of blow-on number of times; Volatile matter and thermal field system residual on the thermal field system are sintered to one, with the work-ing life of reducing thermal field system largely, thereby have increased production cost.
The utility model content
The utility model technical problem to be solved is to above-mentioned deficiency of the prior art; A kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up is provided; It is reasonable in design, input cost is low, energy consumption is low and it is convenient to realize, use is easy and simple to handle, result of use good; When significantly prolonging thermal field system work-ing life, reducing production costs, also can improve the production efficiency of silicon single crystal.
For solving the problems of the technologies described above; The technical scheme that the utility model adopts is: a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up; It is characterized in that: comprise main heat-preservation cylinder, the quartz crucible that is positioned at main heat-preservation cylinder middle inside, the plumbago crucible that is sleeved on the quartz crucible outside, the pot holder that is installed in the plumbago crucible bottom that are laid in the single crystal growing furnace master furnace chamber, be installed in pressure pin under the pot holder, be laid in well heater, the Graphite Electrodes that is electrically connected with well heater of plumbago crucible below and be laid in directly over the quartz crucible and the diminishing guide shell of bore from top to bottom; Said guide shell comprises external flow guiding cylinder and the inner draft tube that is sleeved in the external flow guiding cylinder, and the top of said main heat-preservation cylinder is provided with heat-preservation cylinder and its underpart is provided with down heat-preservation cylinder; Said Graphite Electrodes is laid in down in the heat-preservation cylinder, and said external flow guiding cylinder and inner draft tube all are laid in the heat-preservation cylinder, and following heat-preservation cylinder is the heat-preservation cylinder of sidewall sealing, and has upper air-vent on the sidewall of said upward heat-preservation cylinder.
Above-mentioned a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up, it is characterized in that: the top inner chamber of the inner chamber of said inner draft tube, quartz crucible, the inner chamber of going up heat-preservation cylinder and upper air-vent are formed the last discharge-channel that pulling monocrystal silicon is discharged with argon gas.
Above-mentioned a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up, it is characterized in that: the quantity of said upper air-vent is a plurality of.
Above-mentioned a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up, it is characterized in that: a plurality of said upper air-vents are even laying.
Above-mentioned a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up, it is characterized in that: a plurality of said upper air-vents all are laid on the same plane, and said upper air-vent all is laid in the top of heat-preservation cylinder.
The utility model compared with prior art has the following advantages:
1, simple in structure, reasonable in design and the processing and fabricating cost is low.
2, few with the change part of graphite thermal field system to existing single crystal growing furnace, only need will have now on the sidewall that the venting hole that is arranged on down on the heat-preservation cylinder is arranged on heat-preservation cylinder and get final product.
3, use is easy and simple to handle; During actual the use; The argon gas that pulling monocrystal silicon is used is to make argon gas get into guide shell from secondary furnace chamber, and through the fusion silicon liquid level of quartz crucible and after going up the inner chamber of heat-preservation cylinder, directly from the upper air-vent discharge that is arranged on the heat-preservation cylinder; Pass through the gap between the inboard wall of burner hearth of main heat-preservation cylinder and single crystal growing furnace afterwards again; From be arranged on the single crystal growing furnace body of heater the gas exhaust duct of below discharge the single crystal growing furnace body of heater, at last detach by vacuum pump set in the main furnace chamber, thus exhaust process on realizing.
4, result of use is good; After adopting the utility model that pulling monocrystal silicon is descended exhaust with argon gas; Body of heater after pulling single crystal silicon finishes only has inboard wall of burner hearth to be attached with a large amount of volatile matters; Graphite thermal field system in the burner hearth does not almost have volatile matter residual, thus the work-ing life of having improved thermal field system.Simultaneously, because the volatile matter ratio that inboard wall of burner hearth adheres to is easier to clean out, does not require a great deal of time, thereby improved production efficiency.In addition, the exhaust-duct in the thermal field system is without the well heater of quartz crucible bottom, so can not cause the meaningless loss of heat, more traditional following exhaust thermal field system is more energy-conservation.
In sum; The utility model is reasonable in design, input cost is low, energy consumption is low and it is convenient to realize, use is easy and simple to handle, result of use good; When significantly prolonging thermal field system work-ing life, reducing production costs; Also can improve the production efficiency of silicon single crystal, the work-ing life that can effectively solve silicon single-crystal inferior quality, the thermal field system produced that existing single crystal growing furnace exists with thermal field system, short, volatile matter was cleared up multiple practical problemss such as difficult, that production cost is higher and energy consumption is bigger.
Through accompanying drawing and embodiment, the technical scheme of the utility model is done further detailed description below.
Description of drawings
Fig. 1 is the user mode reference drawing of the utility model.
Description of reference numerals:
1-master's heat-preservation cylinder; The 2-quartz crucible; The holder of 3-pot;
The 4-pressure pin; The 5-well heater; The 6-Graphite Electrodes;
The 7-external flow guiding cylinder; The 8-inner draft tube; The last heat-preservation cylinder of 9-;
Heat-preservation cylinder under the 10-; The 11-upper air-vent; The 12-upper cover;
13-bottom lid; 14-loam cake graphite felt; The 15-thermally-insulated body;
16-thermally-insulated body insulation quilt; The 17-electrode sheath; 18-annular pressure pin sheath;
19-furnace bottom insulation quilt; The 20-sleeve cap; 21-annular graphite base plate;
22-master's heat-preservation cylinder insulation quilt; The last heat-preservation cylinder insulation quilt of 23-; Heat-preservation cylinder insulation quilt under the 24-;
25-river bottom protection insulation quilt; 26-screw protecting cover; The 27-quartz sheath;
28-guide shell insulation quilt; The 29-plumbago crucible.
Embodiment
As shown in Figure 1; The utility model comprises main heat-preservation cylinder 1, the quartz crucible 2 that is positioned at main heat-preservation cylinder 1 middle inside, the plumbago crucible 29 that is sleeved on quartz crucible 2 outsides, the pot holder 3 that is installed in plumbago crucible 29 bottoms that are laid in the single crystal growing furnace master furnace chamber, be installed in pressure pin 4, the well heater 5 that is laid in plumbago crucible 29 belows, the Graphite Electrodes 6 that is electrically connected with well heater 5 under the pot holder 3 and be laid in directly over the quartz crucible 2 and the diminishing guide shell of bore from top to bottom; Said guide shell comprises external flow guiding cylinder 7 and the inner draft tube 8 that is sleeved in the external flow guiding cylinder 7, and the top of said main heat-preservation cylinder 1 is provided with heat-preservation cylinder 9 and its underpart is provided with down heat-preservation cylinder 10.Said Graphite Electrodes 6 is laid in down in the heat-preservation cylinder 10, and said external flow guiding cylinder 7 all is laid in the heat-preservation cylinder 9 with inner draft tube 8, and following heat-preservation cylinder 10 is the heat-preservation cylinder of sidewall sealing, and has upper air-vent 11 on the sidewall of said upward heat-preservation cylinder 9.
In the present embodiment, the top inner chamber of the inner chamber of said inner draft tube 8, quartz crucible 2, the inner chamber of going up heat-preservation cylinder 9 and upper air-vent 11 are formed the last discharge-channel that pulling monocrystal silicon is discharged with argon gas.
During actual processing and fabricating, the quantity of said upper air-vent 11 is a plurality of, and a plurality of said upper air-vent 11 is even laying.In the present embodiment, a plurality of said upper air-vents 11 all are laid on the same plane, and said upper air-vent 11 all is laid in the top of heat-preservation cylinder 9.
During actual installation, said guide shell top is fixed on the annular and covers, said annular loam cake comprise upper cover 12, bottom lid 13 and be clipped on upper cover 12 and bottom lid 13 between loam cake graphite felt 14.The bottom pad of said pot holder 3 is equipped with thermally-insulated body 15, and the middle and upper part of said thermally-insulated body 15 is provided with thermally-insulated body insulation quilt 16.Be set with electrode sheath 17 on the said Graphite Electrodes 6; The outside, said pressure pin 4 middle parts is set with annular pressure pin sheath 18; Be set with furnace bottom insulation quilt 19 on the said annular pressure pin sheath 18; Said furnace bottom insulation quilt 19 is between annular pressure pin sheath 18 and electrode sheath 17, and pad is equipped with annular graphite base plate 21 on the furnace bottom insulation quilt 19, and annular pressure pin sheath 18 tops are provided with the annular graphite base plate 21 fastening sleeve caps 20 that are fixed on the furnace bottom insulation quilt 19.Said main heat-preservation cylinder 1 arranged outside has main heat-preservation cylinder insulation quilt 22, and said heat-preservation cylinder 9 arranged outside that go up have last heat-preservation cylinder insulation quilt 23, and heat-preservation cylinder 10 arranged outside have following heat-preservation cylinder insulation quilt 24 down, and said heat-preservation cylinder 10 bottoms down are provided with river bottom protection insulation quilt 25.Said Graphite Electrodes 6 tops are provided with screw protecting cover 26, and are provided with quartz sheath 27 bottom it, and pad is equipped with guide shell insulation quilt 28 between external flow guiding cylinder 7 and the inner draft tube 8.Said heat-preservation cylinder insulation quilt 23 correspondences that go up have and the relative through hole in upper air-vent 11 positions.
During actual the use; The argon gas that pulling monocrystal silicon is used is after making argon gas get into guide shell from secondary furnace chamber; And,, pass through the gap between the inboard wall of burner hearth of main heat-preservation cylinder 1 and single crystal growing furnace afterwards more directly from upper air-vent 11 discharges that are arranged on the heat-preservation cylinder 9 through the fusion silicon liquid levels in the quartz crucible 2 and after going up the inner chamber of heat-preservation cylinder 9; From be arranged on the single crystal growing furnace body of heater the gas exhaust duct of below discharge the single crystal growing furnace body of heater, detach by vacuum pump set in the main furnace chamber at last.
The above; It only is the preferred embodiment of the utility model; Be not that the utility model is done any restriction; Everyly any simple modification that above embodiment did, change and equivalent structure are changed, all still belong in the protection domain of the utility model technical scheme according to the utility model technical spirit.
Claims (5)
1. go up exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system for one kind; It is characterized in that: comprise main heat-preservation cylinder (1), the quartz crucible (2) that is positioned at main heat-preservation cylinder (1) middle inside, the plumbago crucible (29) that is sleeved on quartz crucible (2) outside, the pot holder (3) that is installed in plumbago crucible (29) bottom that are laid in the single crystal growing furnace master furnace chamber, be installed in pressure pin (4) under the pot holder (3), be laid in well heater (5), the Graphite Electrodes (6) that is electrically connected with well heater (5) of plumbago crucible (29) below and be laid in directly over the quartz crucible (2) and the diminishing guide shell of bore from top to bottom; Said guide shell comprises external flow guiding cylinder (7) and is sleeved on the inner draft tube (8) in the external flow guiding cylinder (7) that the top of said main heat-preservation cylinder (1) is provided with heat-preservation cylinder (9) and its underpart is provided with down heat-preservation cylinder (10); Said Graphite Electrodes (6) is laid in down in the heat-preservation cylinder (10); Said external flow guiding cylinder (7) and inner draft tube (8) all are laid in the heat-preservation cylinder (9); Following heat-preservation cylinder (10) is the heat-preservation cylinder of sidewall sealing, and has upper air-vent (11) on the sidewall of said upward heat-preservation cylinder (9).
2. according to the described a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up of claim 1, it is characterized in that: the top inner chamber of the inner chamber of said inner draft tube (8), quartz crucible (2), the inner chamber of going up heat-preservation cylinder (9) and upper air-vent (11) are formed the last discharge-channel that pulling monocrystal silicon is discharged with argon gas.
3. according to claim 1 or 2 described a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field systems of going up, it is characterized in that: the quantity of said upper air-vent (11) is a plurality of.
4. according to the described a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up of claim 3, it is characterized in that: a plurality of said upper air-vents (11) are even laying.
5. according to the described a kind of exhaust thermal field formula straight pulling silicon single crystal furnace graphite thermal field system of going up of claim 3, it is characterized in that: a plurality of said upper air-vents (11) all are laid on the same plane, and said upper air-vent (11) all is laid in the top of heat-preservation cylinder (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120242599U CN202139324U (en) | 2011-07-13 | 2011-07-13 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120242599U CN202139324U (en) | 2011-07-13 | 2011-07-13 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
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| CN202139324U true CN202139324U (en) | 2012-02-08 |
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| CN201120242599U Expired - Lifetime CN202139324U (en) | 2011-07-13 | 2011-07-13 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102758246A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heat shielding device for single crystal furnace |
| CN105177701A (en) * | 2015-10-14 | 2015-12-23 | 江苏华盛天龙光电设备股份有限公司 | Low-energy consumption single crystal furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN106894082A (en) * | 2015-12-17 | 2017-06-27 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN108085741A (en) * | 2018-01-30 | 2018-05-29 | 宁夏旭樱新能源科技有限公司 | The single crystal growing furnace of applicating energy-saving type thermal field |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN110512288A (en) * | 2019-09-10 | 2019-11-29 | 大同新成新材料股份有限公司 | A kind of thermal field crucible attemperator and its application method |
| CN112030230A (en) * | 2020-08-11 | 2020-12-04 | 杨文伟 | Semiconductor material processing system |
| CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
| CN115323480A (en) * | 2022-08-24 | 2022-11-11 | 山西中电科新能源技术有限公司 | On-line thermal field regeneration method for czochralski crystal growing furnace |
-
2011
- 2011-07-13 CN CN201120242599U patent/CN202139324U/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102758246A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heat shielding device for single crystal furnace |
| CN105525346A (en) * | 2014-10-21 | 2016-04-27 | 镇江大成新能源有限公司 | Novel single crystal furnace |
| CN105887207A (en) * | 2014-10-21 | 2016-08-24 | 镇江大成新能源有限公司 | Low-power-consumption monocrystal furnace |
| CN105177701A (en) * | 2015-10-14 | 2015-12-23 | 江苏华盛天龙光电设备股份有限公司 | Low-energy consumption single crystal furnace |
| CN106894082B (en) * | 2015-12-17 | 2019-04-19 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN106894082A (en) * | 2015-12-17 | 2017-06-27 | 上海超硅半导体有限公司 | Monocrystalline silicon growing furnace |
| CN108085741A (en) * | 2018-01-30 | 2018-05-29 | 宁夏旭樱新能源科技有限公司 | The single crystal growing furnace of applicating energy-saving type thermal field |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN110512288A (en) * | 2019-09-10 | 2019-11-29 | 大同新成新材料股份有限公司 | A kind of thermal field crucible attemperator and its application method |
| CN112030230A (en) * | 2020-08-11 | 2020-12-04 | 杨文伟 | Semiconductor material processing system |
| CN112030230B (en) * | 2020-08-11 | 2022-04-15 | 深圳市凯新达电子有限公司 | Semiconductor material processing system |
| CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
| CN115323480A (en) * | 2022-08-24 | 2022-11-11 | 山西中电科新能源技术有限公司 | On-line thermal field regeneration method for czochralski crystal growing furnace |
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Granted publication date: 20120208 |
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