CN210683991U

CN210683991U - Monocrystalline silicon growing device

Info

Publication number: CN210683991U
Application number: CN201921541289.2U
Authority: CN
Inventors: 王志辉
Original assignee: Datong Xincheng New Material Co Ltd
Current assignee: Datong Xincheng New Material Co Ltd
Priority date: 2019-09-17
Filing date: 2019-09-17
Publication date: 2020-06-05
Anticipated expiration: 2029-09-17

Abstract

The utility model discloses a monocrystalline silicon growth device, the induction cooker comprises a cooker bod, all be fixed with fixed block and lower fixed block on the relative lateral wall in the furnace body, bottom in the furnace body is fixed with stove bottom protective disc, the upper end of stove bottom protective disc is fixed with graphite carbon felt, and graphite carbon felt is located the lower extreme of fixed block down, the lower extreme of going up the fixed block is fixed with the cover that keeps warm, the upper end of fixed block is fixed with down the cover that keeps warm down, go up to keep warm and cover and keep warm down between the cover and be fixed with well heat preservation jointly. The utility model discloses a cooperation between L type grip block, crucible tray and the connecting block has realized carrying out the function of centre gripping to the crucible of equidimension not, and stability when having improved the crucible heating has guaranteed monocrystalline silicon's growth rate and quality, the time of having practiced thrift, and application scope is wide, easy operation, the defect of the crystal that has significantly reduced.

Description

Monocrystalline silicon growing device

Technical Field

The utility model relates to a monocrystalline silicon technical field especially relates to a monocrystalline silicon growth device.

Background

Monocrystalline silicon is a relatively active non-metallic element, is an important component of crystal materials, and is in the front of the development of new materials. The solar photovoltaic power generation and heat supply semiconductor material is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like. Since solar energy has the advantages of cleanness, environmental protection, convenience and the like, in recent thirty years, solar energy utilization technology has been developed greatly in the aspects of research and development, commercial production and market development, and becomes one of the emerging industries of rapid and stable development in the world.

Silicon crystal solar cells (monocrystalline silicon and polycrystalline silicon) have been widely used as an important clean energy source due to the ready availability of silicon materials and the mature production method of solar grade high purity silicon. The usage of such batteries has increased dramatically into the 21 st century.

At present, when a monocrystalline silicon growing device is used for obtaining silicon, a crucible is needed to be used for heating polycrystalline silicon raw materials, however, most of the existing monocrystalline silicon growing devices are fixed, and when crucibles with different sizes are used, the crucibles cannot be stably clamped and fixed, so that the growing speed and the quality of monocrystalline silicon are influenced.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the defects existing in the prior art and providing a monocrystalline silicon growing device.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a monocrystalline silicon growth device comprises a furnace body, wherein an upper fixing block and a lower fixing block are fixed on opposite side walls in the furnace body, a furnace bottom protection disc is fixed at the bottom in the furnace body, a graphite carbon felt is fixed at the upper end of the furnace bottom protection disc and is positioned at the lower end of the lower fixing block, an upper heat-insulating cover is fixed at the lower end of the upper fixing block, a lower heat-insulating cover is fixed at the upper end of the lower fixing block, a middle heat-insulating cover is jointly fixed between the upper heat-insulating cover and the lower heat-insulating cover, guide cylinders are fixed on opposite sides of the two upper fixing blocks, a supporting rod sheath penetrates through and is fixed in the middle parts of the furnace body, the graphite carbon felt and the furnace bottom protection disc, a supporting rod penetrates through the supporting rod sheath, a supporting device is arranged at the upper end of the supporting rod, a graphite crucible is arranged on the supporting device, a quartz crucible is arranged in the graphite crucible, the upper end of the quartz, the lower ends of the two guide cylinders extend into the quartz crucible, a heating device is arranged in the furnace body, and the heating device corresponds to the quartz crucible.

Preferably, the supporting device comprises a supporting block fixed on the upper end of the supporting rod, a crucible tray is fixed on the upper end of the supporting block, connecting blocks are fixed on two sides of the crucible tray, slots are formed in the other two sides of the crucible tray and one side of each of the two connecting blocks, an L-shaped clamping plate penetrates through the slots, more than two through holes are formed in one side wall of each slot at equal intervals, more than two threaded blind holes corresponding to the through holes are formed in one side wall of the L-shaped clamping plate at equal intervals, screws are arranged in four of the through holes in a penetrating mode, one ends of the screws extend into the corresponding threaded blind holes, clamping blocks are fixed on one side of the L-shaped clamping plate, and one sides of the four clamping blocks are abutted to the side wall of the graphite crucible in a circle.

Preferably, the heating device comprises an electrode sheath which penetrates through and is fixed on the furnace body, the graphite carbon felt and the furnace bottom protection disc, a quartz ring is fixed on the side wall of the circumference in the electrode sheath, an electrode penetrates through the quartz ring, an L-shaped heater is fixed at the upper end of the electrode through an electrode bolt, and the two L-shaped heaters are respectively positioned on two sides of the quartz crucible.

Preferably, the upper heat-insulating cover, the middle heat-insulating cover and the lower heat-insulating cover are all made of carbon fiber non-woven cloth and thin carbon fiber net tires.

Preferably, the support block and the crucible tray are integrally formed.

Preferably, the number of the threaded blind holes is 5-8.

A method of growing single crystal silicon, comprising the steps of:

s1, preparing a proper amount of polycrystalline material and impurity mixture;

s2, pouring the polycrystal material mixture into a quartz crucible through a guide cylinder;

s3, heating the quartz crucible by using an L-shaped heater to completely melt the polycrystalline material;

s4, putting down the seed crystal, baking the seed crystal, contacting the seed crystal with the melt, pulling the seed crystal upwards, and controlling the temperature to crystallize the melt on the seed crystal;

s5, keeping the single crystal in a cylindrical shape to start growing until the single crystal grows to the required diameter size;

s6, gradually reducing the diameter of the single crystal to make the single crystal finally become a cone;

and S7, cooling down the temperature, and taking out the molded single crystal from the furnace body.

In the utility model, a proper amount of polycrystal mixture is prepared, then polysilicon raw material and impurities are dropped into a quartz crucible through a draft tube, the types of the impurities are determined according to N or P type of resistance, the types of the impurities comprise boron, phosphorus, antimony and arsenic, only boron is doped in the current domestic solar energy industry to form a P type semiconductor, after the polysilicon raw material is added into the quartz crucible, a furnace body is closed and vacuumized, high-purity argon is filled into the furnace body to maintain a certain pressure range, then a heating power supply is opened, an L type heater is used for heating the temperature to be higher than melting temperature (1420 ℃), the polysilicon raw material is melted, after the temperature of silicon melt is stabilized, the seed crystal is rapidly lifted upwards when slowly immersed into the silicon melt for crystal growth, the diameter of the grown seed crystal is reduced to a certain size (4-6 mm), and because a crossing angle is formed by a dislocation line and a growth axis, as long as the neck is long enough, dislocation can be discharged out of the crystal surface to generate low-dislocation crystals, after the neck is elongated, the temperature and the pulling speed are reduced to ensure that the diameter of the crystals is gradually increased to a required size, after the neck and the shoulder are elongated, the diameter of the crystal bar can be maintained between plus and minus 2mm by means of continuous adjustment of the pulling speed and the temperature, the section with fixed diameter is called an equal-diameter part, the monocrystalline silicon wafer is taken from the equal-diameter part, and after the equal-diameter part is grown, if the crystal bar is immediately separated from the liquid level, the thermal stress enables the crystal bar to have dislocation and slip lines, so that in order to avoid the problem, the diameter of the crystal bar must be slowly reduced until the crystal bar becomes a sharp point and is separated from the liquid level to obtain a finished product, and then the finished product is taken out of the furnace body after the temperature is reduced, the utility model discloses a combination among an L-shaped clamping plate, a crucible tray and a connecting block, the crucible clamping device has the advantages that the function of clamping crucibles of different sizes is realized, the stability of the crucibles during heating is improved, the growth speed and quality of monocrystalline silicon are guaranteed, the time is saved, the application range is wide, the operation is simple, and the defects of crystals are greatly reduced.

Drawings

FIG. 1 is a schematic structural diagram of a single crystal silicon growth apparatus according to the present invention;

FIG. 2 is a schematic structural view of a crucible tray of a single crystal silicon growing apparatus according to the present invention;

FIG. 3 is an enlarged view of a portion A of a single crystal silicon growth apparatus according to the present invention;

FIG. 4 is an enlarged view of a single crystal silicon growth apparatus according to the present invention at the position B;

fig. 5 is a flow chart of a method for growing monocrystalline silicon according to the present invention.

In the figure: the device comprises a guide shell 1, an upper fixing block 2, a furnace body 3, a middle heat-preservation cover 4, a 5L-shaped heater, a 6-slot, a lower heat-preservation cover 7, a crucible tray 8, a furnace bottom protection disc 9, a supporting rod 10, an electrode sheath 11, an electrode 12, a graphite carbon felt 13, a lower fixing block 14, a through hole 15, a connecting block 16, a supporting rod sheath 17, a graphite crucible 18, a quartz crucible 19, an upper heat-preservation cover 20, a 21L-shaped clamping plate, a quartz ring 22, an electrode bolt 23, a 24L-shaped supporting plate, a threaded blind hole 25, a screw 26, a supporting block 27 and a clamping block 28.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

Referring to fig. 1-4, a monocrystalline silicon growth device, includes furnace body 3, conveniently heats polycrystal material and impurity mixture, all is fixed with upper fixed block 2 and lower fixed block 14 on the relative lateral wall in the furnace body 3, plays the effect of connection fixed, and the bottom in the furnace body 3 is fixed with stove bottom protection plate 9, conveniently protects the bottom of furnace body 3, and the upper end of stove bottom protection plate 9 is fixed with graphite carbon felt 13, and graphite carbon felt 13 is located the lower extreme of lower fixed block 14, and graphite carbon felt 13 has powerful big, the oxidation resistance is strong, the good characteristics of thermal insulation performance.

The utility model discloses in, the lower extreme of going up fixed block 2 is fixed with and keeps warm and covers 20, and the upper end of lower fixed block 14 is fixed with down keeps warm and covers 7, goes up to keep warm and covers 20 and keeps warm down and cover between 7 jointly to be fixed with well heat preservation cover 4, plays the thermal-insulated effect that keeps warm, and two relative one sides of going up fixed block 2 all are fixed with draft tube 1, and the polycrystalline silicon material of being convenient for falls into quartz crucible 19.

The utility model discloses in, the middle part of furnace body 3, graphite carbon felt 13 and stove bottom protective disk 9 runs through jointly and is fixed with die-pin sheath 17, run through in the die-pin sheath 17 and be equipped with die-pin 10, utilize die-pin sheath 17 to conveniently protect die-pin 10, the upper end of die-pin 10 is equipped with strutting arrangement, the last graphite crucible 18 that is equipped with of strutting arrangement, quartz crucible 19 has been placed in the graphite crucible 18, the upper end of quartz crucible 19 extends to graphite crucible 18's upper end, under strutting arrangement's effect, it is fixed that the centre gripping is stabilized to graphite crucible 18 to the convenience, improve graphite crucible 18's stability.

The utility model discloses in, in the lower extreme of two draft tubes 1 all extended to quartz crucible 19, the polycrystal material of being convenient for fell down, is equipped with heating device in the furnace body 3, and heating device and quartz crucible 19 are corresponding, go up heat preservation cover 20, well heat preservation cover 4 and lower heat preservation cover 7 and all adopt carbon fiber weftless cloth and thin carbon fiber net child to make, supporting shoe 27 and crucible tray 8 are integrated into one piece, under heating device's effect, conveniently heat the polycrystal material in the quartz crucible 19 and melt.

The utility model discloses in, strutting arrangement plays the effect of stabilizing the support including fixing the supporting shoe 27 in die-pin 10 upper end, and the upper end of supporting shoe 27 is fixed with crucible tray 8, and the convenience supports graphite crucible 18, and crucible tray 8's wherein both sides all are fixed with connecting block 16, and crucible tray 8's other both sides and one side of two connecting block 16 all are equipped with slot 6, run through in slot 6 and are equipped with L type grip block 21, utilize L type grip block 21 to conveniently carry out the centre gripping fixed to graphite crucible 18.

The utility model discloses in, the equidistant through-hole 15 more than two that is equipped with on the one end lateral wall in the slot 6, one side equidistant of L type grip block 21 is equipped with the screw blind hole 25 more than two and that the through-hole 15 corresponds, the quantity of screw blind hole 25 is 5-8, wherein all run through in four through-holes 15 and be equipped with screw 26, screw 26's one end extends to in the screw blind hole 25 that corresponds, one side of L type grip block 21 all is fixed with grip block 28, one side of four grip block 28 all contradicts on the a week lateral wall of graphite crucible 18, conveniently stabilize the centre gripping, cooperation through between slot 6 and the L type grip block 21, conveniently adjust the position of L type grip block 21 according to the size of crucible, so that can both carry out the centre gripping to the not crucible of equidimension fixed, application scope is wide.

The utility model discloses in, heating device is fixed with quartz ring 22 including running through jointly and fixing the electrode sheath 11 on furnace body 3, graphite carbon felt 13 and stove bottom protective disk 9 on the a week lateral wall in the electrode sheath 11, the guard electrode 12 of being convenient for, run through in the quartz ring 22 and be equipped with electrode 12, electrode 12's upper end is fixed with L type heater 5 through electrode bolt 23, two L type heaters 5 are located quartz crucible 19's both sides respectively, utilize electrode 12 conveniently to heat L type heater 5.

Referring to fig. 5, a method of growing single crystal silicon includes the steps of:

s1, preparing a proper amount of polycrystalline material and impurity mixture;

s2, pouring the polycrystal material mixture into the quartz crucible 19 through the guide flow cylinder 1, wherein the type of impurities is determined according to the N or P type of the resistor, the type of the impurities comprises boron, phosphorus, antimony and arsenic, and only boron is doped in the domestic solar energy industry at present to form a P type semiconductor;

s3, the furnace body 3 is closed and vacuumized, then high-purity argon is filled in to keep the high-purity argon within a certain pressure range, then a heating power supply is turned on, the quartz crucible 19 is heated by the L-shaped heater 5 to a melting temperature (1420 ℃) or higher, and polycrystalline materials are completely melted;

s4, putting down and baking the seed crystal, enabling the seed crystal to contact with the melt, lifting the seed crystal upwards to reduce the diameter of the grown seed crystal to a certain size (4-6 mm), as the dislocation line and the growth axis form a crossing angle, as long as the neck is long enough, the dislocation can be discharged out of the crystal surface to generate a low-dislocation crystal, and controlling the temperature to enable the melt to be crystallized on the seed crystal;

s5, keeping the single crystal in a cylindrical shape to start growing until the single crystal grows to the required diameter, and keeping the diameter of the crystal bar between plus and minus 2mm by continuously adjusting the pulling speed and the temperature, wherein the part with fixed diameter is called as an equal-diameter part, and the single crystal silicon wafer is taken from the equal-diameter part;

s6, gradually reducing the diameter of the single crystal to make the single crystal finally taper, and avoiding the dislocation and the slip line of the crystal bar caused by thermal stress;

s7, cooling down the temperature, and taking out the formed single crystal from the furnace body 3.

In the utility model, a polycrystal material mixture is prepared firstly, then a polysilicon raw material and impurities fall into a quartz crucible 19 through a draft tube 1, the types of the impurities are determined according to the N or P type of a resistor, the types of the impurities comprise boron, phosphorus, antimony, arsenic, only boron is doped in the current domestic solar energy industry to form a P type semiconductor, after the polysilicon raw material is added into the quartz crucible 19, a furnace body 3 is closed and vacuumized, then high-purity argon gas is filled to maintain a certain pressure range, then a heating power supply is turned on, an L type heater 5 is utilized to heat the temperature to be higher than the melting temperature (1420 ℃), the polysilicon raw material is melted, after the temperature of silicon melt is stable, the seed crystal is slowly immersed into the silicon melt to grow the seed crystal, the diameter of the grown seed crystal is reduced to a certain size (4-6 mm), and a crossing angle is formed by a dislocation line and a growth axis, as long as the neck is long enough, dislocation can be discharged out of the crystal surface to generate low-dislocation crystals, after the neck is grown, the temperature and the pulling speed are reduced to gradually increase the diameter of the crystals to a required size, after the neck and the shoulder are grown, the diameter of the crystal bar can be maintained between plus and minus 2mm by continuously adjusting the pulling speed and the temperature, the section with fixed diameter is called an equal-diameter part, the monocrystalline silicon wafer is taken from the equal-diameter part, and after the equal-diameter part is grown, if the crystal bar is immediately separated from the liquid level, the thermal stress enables the crystal bar to have dislocation and slip lines, so that in order to avoid the problem, the diameter of the crystal bar is required to be gradually reduced until the crystal bar becomes a sharp point and is separated from the liquid level to obtain a finished product, and then the finished product is taken out of the furnace body 3 after the temperature is reduced.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. A monocrystalline silicon growing device comprises a furnace body (3), and is characterized in that: the furnace comprises a furnace body (3), wherein an upper fixed block (2) and a lower fixed block (14) are fixed on opposite side walls in the furnace body (3), a furnace bottom protective disc (9) is fixed at the bottom in the furnace body (3), a graphite carbon felt (13) is fixed at the upper end of the furnace bottom protective disc (9), the graphite carbon felt (13) is located at the lower end of the lower fixed block (14), an upper heat-insulating cover (20) is fixed at the lower end of the upper fixed block (2), a lower heat-insulating cover (7) is fixed at the upper end of the lower fixed block (14), a middle heat-insulating cover (4) is fixed between the upper heat-insulating cover (20) and the lower heat-insulating cover (7) together, guide cylinders (1) are fixed at opposite sides of the two upper fixed blocks (2), a support rod sheath (17) penetrates through and is fixed in the middle parts of the furnace body (3), the graphite carbon felt (13) and the furnace bottom protective disc (9), a support rod sheath (, the upper end of die-pin (10) is equipped with strutting arrangement, strutting arrangement is last to be equipped with graphite crucible (18), place quartz crucible (19) in graphite crucible (18), the upper end of quartz crucible (19) extends to the upper end of graphite crucible (18), and the lower extreme of two draft tubes (1) all extends to in quartz crucible (19), be equipped with heating device in furnace body (3), heating device and quartz crucible (19) are corresponding.

2. A single crystal silicon growth apparatus as claimed in claim 1, wherein: the supporting device comprises a supporting block (27) fixed at the upper end of a supporting rod (10), a crucible tray (8) is fixed at the upper end of the supporting block (27), connecting blocks (16) are fixed on two sides of the crucible tray (8), slots (6) are arranged on the other two sides of the crucible tray (8) and one side of each of the two connecting blocks (16), an L-shaped clamping plate (21) penetrates through the slots (6), more than two through holes (15) are arranged on the side wall of one end in each slot (6) at equal intervals, more than two threaded blind holes (25) corresponding to the through holes (15) are arranged on one side of each L-shaped clamping plate (21) at equal intervals, screws (26) penetrate through four through holes (15), one ends of the screws (26) extend into the corresponding threaded blind holes (25), and clamping blocks (28) are fixed on one side of each L-shaped clamping plate (21), one side of each of the four clamping blocks (28) is abutted against the side wall of the periphery of the graphite crucible (18).

3. A single crystal silicon growth apparatus as claimed in claim 1, wherein: heating device protects electrode sheath (11) on dish (9) including running through and fixing furnace body (3), graphite carbon felt (13) and stove bottom jointly, be fixed with quartz ring (22) on a week lateral wall in electrode sheath (11), run through in quartz ring (22) and be equipped with electrode (12), the upper end of electrode (12) is fixed with L type heater (5) through electrode bolt (23), and two L type heaters (5) are located the both sides of quartz crucible (19) respectively.

4. A single crystal silicon growth apparatus as claimed in claim 1, wherein: the upper heat-insulating cover (20), the middle heat-insulating cover (4) and the lower heat-insulating cover (7) are all made of carbon fiber non-woven cloth and thin carbon fiber net tires.

5. A single crystal silicon growth apparatus as claimed in claim 2, wherein: the supporting block (27) and the crucible tray (8) are integrally formed.

6. A single crystal silicon growth apparatus as claimed in claim 2, wherein: the number of the threaded blind holes (25) is 5-8.