CN205241851U - Single crystal furnace heating system - Google Patents
Single crystal furnace heating system Download PDFInfo
- Publication number
- CN205241851U CN205241851U CN201521135314.9U CN201521135314U CN205241851U CN 205241851 U CN205241851 U CN 205241851U CN 201521135314 U CN201521135314 U CN 201521135314U CN 205241851 U CN205241851 U CN 205241851U
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- CN
- China
- Prior art keywords
- crucible
- heating
- heating system
- heating jacket
- single crystal
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Abstract
The utility model aims at providing a single crystal furnace heating system, the utility model provides a by interior crucible, supplemental heating system, heating jacket and the heat preservation cover of including in proper order outside to, the crucible inner wall scribbles and prevents to melt the protective coat that silicon corrodes, the crucible outside is provided with the heating jacket, the heating jacket is open structure, under the narrow width's graphite heated strip, be provided with supplemental heating system between heating jacket and the crucible, supplemental heating system upper portion is provided with the annular hot plate of circle, the symmetric position respectively is provided with an impurity charge door in the hot plate ring. Keep warm and cover the gaseous access & exit that bottom one side was provided with the evacuation and filled protection gas. The utility model has the advantages of scribble the protective coat who prevents to melt the silicon corruption in the crucible, prevent crucible introduction impurity, at the inside cover that keeps warm that sets up of heating jacket, compensation and heating reduces the vertical difference in temperature owing to the crystal shaping causes.
Description
Technical field
The utility model relates to the manufacturing equipment technical field of monocrystalline silicon, relates in particular to a kind of monocrystallineStove heating system.
Background technology
Silicon single crystal, as a kind of semi-conducting material, is mainly used in photovoltaic and semiconductor applications. GreatlyThe semiconductor silicon single crystal of part adopts the manufacture of CZ (Czochralski) vertical pulling method. Generally adoptUse following manufacture method: highly purified polysilicon is packed in silica crucible, heat fused,Then, will melt silicon and slightly do and lower the temperature, give certain degree of supercooling, by the silicon list of a particular crystal orientationCrystal (being called silicon seed) packs in clamper, and the upper end of clamper is by connector and seedCrystallographic axis connects, and silicon seed is fixed on clamper lower end, makes the drive backspin of clamper at seed shaftTurn, and silica crucible counter-rotated under the drive of graphite axis, silicon seed is slowly declined,And contact with silicon melt, then upwards promote silicon seed with certain speed, the object of this processMainly to eliminate the dislocation defects forming because of thermal shock in silicon seed. Treat that silicon seed rises to oneWhen measured length, by adjusting temperature and the silicon seed hoisting velocity upwards of melt, make silicon seedGrow up, in the time that the diameter of crystal approaches aimed dia, improve hoisting velocity, monocrystal is close toEqual diameter growth. In the last stage of growth course, the silicon melt in silica crucible remains when few,Improve the hoisting velocity of crystal, suitably increase the power of heating simultaneously, crystal is dwindled gradually,Thereby form a tail shape centrum, when enough hour of the point of centrum, crystal will depart from melt,Thereby complete the growth course of crystal.
In the time drawing the monocrystalline silicon of the not volatile foundry alloy boron of adulterant employing, phosphorus, first will mixSilica crucible is put in assorted agent in advance; When draw adulterant adopt volatile pure element antimony, phosphorus,When the monocrystalline silicon of arsenic, adulterant can not be put into silica crucible in advance, must be placed in doping spoon,Doping spoon is moved on to crucible center by crystal pulling process, pours adulterant into crucible, guarantee dopingAccurately.
The advantage of vertical pulling method is that crystal is drawn out liquid level and does not contact with wall, not receptor restriction,Therefore in crystal, stress is little, can prevent again that wall from staiing or contacting may cause mixed and disorderly simultaneouslyNucleus and form polycrystalline. The monocrystalline integrality that this method is made is good, and diameter and length can be very large,Growth rate is also high. Crucible used must be made up of the material of contaminated melt not.
Affect vertical pulling method crystal mass and have the following aspects:
(1) block high-purity polycrystalline silicon need to be placed in to quartz when vertical pulling method manufacture order crystal siliconIn crucible, be heated to its fusing point more than 1420 DEG C, it is melted completely, but the silicon meltingMelt can produce chemical reaction with inner wall of quartz crucible, inner wall of quartz crucible is produced and is corroded, shadowRing the intensity at high temperature of silica crucible, also reduced the lattice perfection of single crystal silicon simultaneouslyProperty.
(2), in crystal pulling process, the silica crucible of charge is placed in heater inside, on cruciblePortion is open system, and not insulation or heat insulation effect are not poor, and protection gas mobile taken away a large amount of heatAmount, and heater side and bottom high insulating effect, therefore, the temperature of melt in silica crucibleDegree of depth intensification with melt is more and more higher, thereby forms larger thermograde, the temperature of meltDeepen constantly to raise with the degree of depth of melt, thereby the thermal convection current aggravation that thermograde is caused is enteredAnd cause defect concentration in crystal sharply to strengthen; Silicon melt erosion silica crucible causes earthenware in additionThe chance that impurity oxygen in crucible enters crystal with convection current increase also significantly increases.
Utility model content
The utility model object is to provide a kind of heating system for single crystal furnace.
The technical solution of the utility model is: a kind of heating system for single crystal furnace, from inside to outside successivelyComprise crucible, auxiliary heating system, heating jacket and stay-warm case, described crucible inwall scribbles and preventsThe protective finish of molten silicon corrosion, described crucible bottom is provided with drawbar base, described drawbar baseBe fixedly connected with drawbar, described drawbar periphery is provided with drawbar sheath, described crucible outer settingHave heating jacket, described heating jacket is uncovered structure, up-narrow and down-wide graphite heating bar, described in addBetween hot jacket and crucible, be provided with auxiliary heating system, described auxiliary heating system top is provided withThe heating plate of annular, it is reinforced that the interior symmetric position of described heating plate annulus is respectively provided with an impurityMouthful. Stay-warm case bottom one side is provided with the gas inlet-outlet that vacuumizes and fill protection gas.
Further, the graphite heating bar of described heating jacket is trapezoidal, and upper base is two of the length of side of going to the bottom/ mono-.
Further, the interior radius of circle of described annular heating plate is greater than single crystal silicon product diameter.
The beneficial effects of the utility model are: in crucible, scribble the protection that prevents molten silicon corrosionCoating, prevents crucible introducing impurity; In heating jacket inside, stay-warm case is set, compensation heating, subtractsThe vertical temperature difference causing due to crystal moulding less.
Brief description of the drawings
Fig. 1 is schematic diagram of the present utility model.
Detailed description of the invention
Below in conjunction with accompanying drawing, detailed description of the invention of the present utility model is made to brief description.
A heating system for single crystal furnace as shown in Figure 1, is followed successively by crucible 2, auxiliary from inside to outsideHeating system 3, heating jacket 4 and stay-warm case 5, described crucible 2 inwalls scribble and prevent molten silicon corruptionThe protective finish 1 of erosion, described crucible 2 bottoms are provided with drawbar base 7, described drawbar base7 are fixedly connected with drawbar 8, and described drawbar 8 peripheries are provided with drawbar sheath 9, described crucible2 outer setting have heating jacket 4, and described heating jacket 4 is uncovered structure, up-narrow and down-wide graphiteFire-bar, is provided with auxiliary heating system 3 between described heating jacket 4 and crucible 2, described auxiliaryHelp heating system 3 tops to be provided with the heating plate 31 of annular, in described heating plate 31 annulusSymmetric position is respectively provided with an impurity charge door 10. Stay-warm case bottom one side is provided with takes out veryEmpty and fill protection gas gas inlet-outlet 6.
The course of work of this example: polycrystalline silicon raw material is added to crucible 2, pass through gas inlet-outlet6 vacuumize, and heating jacket 4 heating make raw material fusing, have protective finish 1 to prevent former in crucible 2Material corrosion crucible 2 is introduced impurity. After temperature stabilization, seed crystal is slowly immersed in silicon melt, byThermal stress in the time that seed crystal contacts with silicon melt field, can make seed crystal produce dislocation, and these dislocations mustMust utilize necking-down Growth to make it to disappear. Necking-down Growth is that seed crystal is upwards promoted fast, makes longThe reduced of the seed crystal going out to a certain size (4-6mm) because dislocation line becomes one with growth axisThe individual angle of cut, as long as necking down is enough long, dislocation just can grow plane of crystal, produces the crystal of zero dislocations.After having grown thin neck, must reduce temperature and pulling rate, make the diameter of crystal gradually increase to requiredSize. After having grown thin neck and shoulder, by the continuous adjustment of pulling rate and temperature, can make crystalline substanceRod diameter maintains between positive and negative 2mm, and this section of fixing part of diameter be called equal-diameter part.
Isodiametric growth process, polycrystal raw material fused solution constantly consumes, and the interior temperature difference of crucible 2 becomes large,Thereby open auxiliary heating system 3, the heating plate 31 of annular has the uncovered part of crucible 2Thermal compensation fully.
Need to add impurity time, by the impurity charge door 10 at annulus heating plate edge, can haveEffect is controlled the even along single crystal silicon growth of raw material.
Above an embodiment of the present utility model is had been described in detail, but described content onlyFor preferred embodiment of the present utility model, can not be considered to for limiting enforcement of the present utility modelScope. Allly do impartial change and improve etc. according to the utility model application range, all belong to thisWithin the patent covering scope of utility model.
Claims (3)
1. a heating system for single crystal furnace, is characterized in that: comprise successively from inside to outside crucible,Auxiliary heating system, heating jacket and stay-warm case, described crucible inwall scribbles and prevents what molten silicon from corrodingProtective finish, described crucible bottom is provided with drawbar base, and described drawbar base and drawbar are fixedConnect, described drawbar periphery is provided with drawbar sheath, and described crucible outer setting has heating jacket,Described heating jacket is uncovered structure, up-narrow and down-wide graphite heating bar, described heating jacket and crucibleBetween be provided with auxiliary heating system, described auxiliary heating system top is provided with adding of annularHot plate, in described heating plate annulus, symmetric position is respectively provided with an impurity charge door. Stay-warm caseBottom one side is provided with the gas inlet-outlet that vacuumizes and fill protection gas.
2. a kind of heating system for single crystal furnace as claimed in claim 1, is characterized in that: instituteThe graphite heating bar of stating heating jacket is trapezoidal, and upper base is 1/2nd of the length of side of going to the bottom.
3. a kind of heating system for single crystal furnace as claimed in claim 1, is characterized in that: instituteThe interior radius of circle of stating annular heating plate is greater than single crystal silicon product diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521135314.9U CN205241851U (en) | 2015-12-17 | 2015-12-17 | Single crystal furnace heating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521135314.9U CN205241851U (en) | 2015-12-17 | 2015-12-17 | Single crystal furnace heating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205241851U true CN205241851U (en) | 2016-05-18 |
Family
ID=55940928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521135314.9U Expired - Fee Related CN205241851U (en) | 2015-12-17 | 2015-12-17 | Single crystal furnace heating system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205241851U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513759A (en) * | 2016-06-15 | 2017-12-26 | 上海新昇半导体科技有限公司 | A kind of monocrystalline silicon growing furnace |
| CN114197059A (en) * | 2021-12-14 | 2022-03-18 | 西安奕斯伟材料科技有限公司 | Single crystal furnace |
-
2015
- 2015-12-17 CN CN201521135314.9U patent/CN205241851U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513759A (en) * | 2016-06-15 | 2017-12-26 | 上海新昇半导体科技有限公司 | A kind of monocrystalline silicon growing furnace |
| CN107513759B (en) * | 2016-06-15 | 2019-11-19 | 上海新昇半导体科技有限公司 | A kind of monocrystalline silicon growing furnace |
| CN114197059A (en) * | 2021-12-14 | 2022-03-18 | 西安奕斯伟材料科技有限公司 | Single crystal furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160518 Termination date: 20211217 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |