CN114959877A - Method for manufacturing monocrystalline silicon ingot and monocrystalline silicon cultivating device - Google Patents
Method for manufacturing monocrystalline silicon ingot and monocrystalline silicon cultivating device Download PDFInfo
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- CN114959877A CN114959877A CN202210627684.2A CN202210627684A CN114959877A CN 114959877 A CN114959877 A CN 114959877A CN 202210627684 A CN202210627684 A CN 202210627684A CN 114959877 A CN114959877 A CN 114959877A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 96
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- 239000010703 silicon Substances 0.000 claims abstract description 95
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 14
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 13
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 13
- 230000008018 melting Effects 0.000 claims abstract description 13
- 230000001276 controlling effect Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 8
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000009395 breeding Methods 0.000 claims 1
- 230000001488 breeding effect Effects 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention is suitable for the technical field of monocrystalline silicon production, and discloses a manufacturing method of a monocrystalline silicon ingot, which comprises the following steps of; s1: feeding: the polycrystalline silicon raw material is put into a quartz crucible to wait for heating and melting, and boron, phosphorus, antimony and arsenic are added and mixed at the same time, so that the production quality of the silicon raw material is improved, and S2: melting: heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic, heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic by a crystal furnace, and raising the heating temperature to 1450 ℃. According to the invention, the temperature control ring is arranged at the top end inside the quartz crucible, so that the temperature control ring can form a constant cooling effect on the ambient temperature of the monocrystalline silicon in the process that the monocrystalline silicon is positioned inside the temperature control ring and is pulled to grow, and the outer wall of the silicon rod is cooled in the process of isometric growth of the monocrystalline silicon, so that the outer wall of the monocrystalline silicon can be ensured to obtain a stable growth value, and the integral quality in the production and manufacturing process of the monocrystalline silicon is greatly improved.
Description
Technical Field
The invention is applicable to the technical field of monocrystalline silicon production, and particularly relates to a manufacturing method of a monocrystalline silicon ingot and a monocrystalline silicon cultivation device.
Background
Currently, monocrystalline silicon has the physical properties of metalloids, has weaker electrical conductivity, and the electrical conductivity of monocrystalline silicon increases along with the increase of temperature; with significant semiconductivity, ultrapure single crystal silicon is an intrinsic semiconductor. The method is characterized in that trace IIIA group elements such as boron are doped into ultrapure monocrystalline silicon to improve the conductive degree of the ultrapure monocrystalline silicon, a P-type silicon semiconductor is formed, trace VA group elements such as phosphorus or arsenic are doped to improve the conductive degree of the ultrapure monocrystalline silicon, N-type silicon semiconductor is formed, the semiconductor material with the most common application is the semiconductor material with the most extensive application, when molten elemental silicon is solidified, silicon atoms are arranged into crystal nuclei in diamond crystal lattices, the crystal nuclei grow into crystal grains with the same crystal face orientation, monocrystalline silicon is formed, the monocrystalline silicon is used as a relatively active non-metal element crystal and is an important component of a crystal material and is positioned at the front edge of the development of a new material, and the manufacturing of the monocrystalline silicon material is subjected to the following processes: the method comprises the steps of quartz sand, metallurgical-grade silicon, purification and refining, deposition of polycrystalline silicon ingots, monocrystalline silicon and silicon wafer cutting, and is mainly used as a semiconductor material and for solar photovoltaic power generation, heat supply and the like.
In the manufacturing process of the monocrystalline silicon, a traditional manufacturing process melts a polycrystalline silicon raw material to form a silicon solution, seed crystals are slowly immersed into the silicon solution to enable the monocrystalline silicon to grow in a sequencing mode, and the pulling device drives the monocrystalline silicon to grow in a stretching mode.
Disclosure of Invention
According to the manufacturing method of the monocrystalline silicon ingot and the monocrystalline silicon cultivating device, the temperature control ring is arranged at the top end inside the quartz crucible, the temperature control ring can form a constant cooling effect on the ambient temperature of the monocrystalline silicon in the process that the monocrystalline silicon is positioned inside the temperature control ring and is pulled to grow, and the outer wall of the silicon rod is cooled in the process of the isometric growth of the monocrystalline silicon, so that the outer wall of the monocrystalline silicon can be ensured to obtain a stable growth value, the integral quality in the production and manufacturing process of the monocrystalline silicon is greatly improved, and the problems in the background art are solved.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for manufacturing a single crystal silicon ingot, comprising the steps of;
s1: feeding: the polycrystalline silicon raw material is put into a quartz crucible to wait for heating and melting, and simultaneously, boron, phosphorus, antimony and arsenic are added for mixing, thereby improving the production quality of the silicon raw material,
S2: melting: heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic, heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic by a crystal furnace, raising the heating temperature to 1450 ℃, wherein the temperature is higher than the melting point of the polysilicon, and quickly obtaining the polysilicon solution raw material,
S3: after necking down growth and the temperature of the polycrystalline silicon solution is stable, slowly immersing the seed crystal into the silicon melt, and rapidly lifting the seed crystal upwards when the seed crystal is contacted with the silicon solution, so that the silicon solution ascends to pull out a crystal at the top of the silicon rod,
S4: growing while shouldering, controlling the speed and temp at neck, regulating the diameter of crystal, and further stretching,
S5: the method comprises the steps of growing in an equal diameter mode, controlling the pulling speed of the silicon rod, controlling the temperature of the silicon rod in a moving mode, keeping the stability of the silicon rod when the silicon rod is moved out to be constant, ensuring that the diameter of the silicon rod is stably locked, determining the diameter of the silicon rod at the moment to form equal diameter growth, and acting on the follow-up cutting and taking of silicon wafers,
S6: when the tail part grows and the crystal bar is separated from the liquid level, the integral pulling speed is reduced, the crystal bar is controlled to be slowly separated from the silicon solution until the tail part of the silicon rod forms a sharp point, and the silicon rod can be separated from the liquid level to ensure the production quality of the silicon rod.
A monocrystalline silicon cultivation device comprises a lifting device body, wherein a quartz crucible is arranged at the bottom end of the lifting device body, a temperature control ring is arranged in the middle of the top end inside the quartz crucible, cooling holes are uniformly distributed in the inner wall of the temperature control ring, a gas pipe is arranged on the outer wall of the temperature control ring, a semiconductor refrigerator is installed on the outer wall of the quartz crucible, and the gas inlet of the semiconductor refrigerator is communicated with the tail end of the gas pipe.
Preferably, the two ends of the temperature control ring are both fixed with a frame, and the top end of the frame is fixed at the top end inside the quartz crucible.
Preferably, the temperature control ring is hollow, and the gas pipe is communicated with the cooling hole through the temperature control ring.
Preferably, the left side of the lifting device is provided with an air hood, the tail end of the air hood is provided with an air suction port, a fan is arranged inside the air hood, and heat dissipation holes are uniformly formed in the right side of the lifting device body.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the temperature control ring is arranged at the top end inside the quartz crucible, so that the temperature control ring can form a constant cooling effect on the ambient temperature of the monocrystalline silicon in the process that the monocrystalline silicon is positioned inside the temperature control ring and is pulled to grow, and the outer wall of the silicon rod is cooled in the process of isometric growth of the monocrystalline silicon, so that the outer wall of the monocrystalline silicon can be ensured to obtain a stable growth value, and the integral quality in the production and manufacturing process of the monocrystalline silicon is greatly improved.
2. According to the silicon rod lifting device, the air hood and the heat dissipation holes are additionally arranged outside the lifting device body, and the fan is arranged inside the air hood, so that when the silicon rods are completely produced and lifted out, the temperature of the silicon rods can be controlled, the overall temperature of the silicon rods is dissipated, the cooling effect of a single group of silicon rods is improved, and the efficiency of the next group of silicon rods in the production and extraction process is facilitated.
Drawings
FIG. 1 is a schematic view of an overall structure of a single crystal silicon growing apparatus according to the present invention;
FIG. 2 is a schematic diagram of an internal structure of a temperature control ring of a single crystal silicon growing apparatus according to the present invention.
In the figure: 1. a pulling device; 2. a quartz crucible; 3. a frame; 4. a temperature control ring; 5. heat dissipation holes; 6. a gas hood; 7. an air suction port; 8. a fan; 9. a semiconductor refrigerator; 10. a gas delivery pipe; 11. and (6) cooling the holes.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "disposed" are to be construed broadly, e.g., as meaning fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed; the types of the electrical appliances provided in the present invention are only references, and different types of electrical appliances with the same function can be replaced according to actual use conditions, and for those skilled in the art, the specific meaning of the above terms in the present invention can be understood in specific situations.
Referring to fig. 1-2, a method of manufacturing a single crystal silicon ingot includes the steps of;
s1: feeding: polysilicon raw material is put into a quartz crucible to wait for heating and melting, and simultaneously, boron, phosphorus, antimony and arsenic are added and mixed, thereby improving the production quality of silicon raw material
S2: melting: heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic, heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic by a crystal furnace, raising the heating temperature to 1450 ℃, wherein the temperature is higher than the melting point of the polysilicon, and quickly obtaining the polysilicon solution raw material,
S3: after necking down growth and the temperature of the polycrystalline silicon solution is stable, slowly immersing the seed crystal into the silicon melt, and rapidly lifting the seed crystal upwards when the seed crystal is contacted with the silicon solution, so that the silicon solution ascends to pull out a crystal at the top of the silicon rod,
S4: growing while shouldering, controlling the speed and temp at neck, regulating the diameter of crystal, and further stretching,
S5: the method comprises the steps of growing in an equal diameter mode, controlling the pulling speed of the silicon rod, simultaneously controlling the temperature of the silicon rod in a moving mode, keeping the stability of the silicon rod in the moving mode, ensuring that the diameter of the silicon rod is stably locked, determining the diameter of the silicon rod at the moment to form equal diameter growth, and acting on a follow-up silicon wafer to be cut,
S6: when the tail part grows and the crystal bar is separated from the liquid level, the integral pulling speed is reduced, the crystal bar is controlled to be slowly separated from the silicon solution until the tail part of the silicon rod forms a sharp point, and the silicon rod can be separated from the liquid level to ensure the production quality of the silicon rod.
A monocrystalline silicon cultivating device comprises a lifting device body 1, wherein a quartz crucible 2 is arranged at the bottom end of the lifting device body 1, a temperature control ring 4 is arranged in the middle of the top end inside the quartz crucible 2, cooling holes 11 are uniformly distributed on the inner wall of the temperature control ring 4, a gas pipe 10 is arranged on the outer wall of the temperature control ring 4, a semiconductor refrigerator 9 is arranged on the outer wall of the quartz crucible 2, an air inlet of the semiconductor refrigerator 9 is communicated with the tail end of the gas pipe 10, the temperature control ring 4 is arranged at the top end inside the quartz crucible 2, the temperature control ring 4 can form a constant cooling effect on the ambient temperature of monocrystalline silicon in the process of lifting and growing the monocrystalline silicon inside the temperature control ring, and the outer wall of a silicon rod is cooled in the process of isometric growth of the monocrystalline silicon, so that the outer wall of the monocrystalline silicon can obtain a stable growth value, thereby greatly improving the overall quality of the monocrystalline silicon in the production and manufacturing process.
In this embodiment, both ends of the temperature control ring 4 are fixed with the frame 3, and the top end of the frame 3 is fixed on the top end inside the quartz crucible 2, so as to ensure the fixed installation of the temperature control ring.
In this embodiment, the inside of accuse temperature ring 4 is the cavity form, gas-supply pipe 10 is linked together through accuse temperature ring 4 and cooling hole 11, does benefit to and carries cooling gas.
In this embodiment, the left side of pulling device body 1 is provided with gas hood 6, and the end of gas hood 6 has seted up induction port 7, the internally mounted of gas hood 6 has fan 8, the right side of pulling device body 1 has evenly seted up louvre 5, installs gas hood 6 and louvre 5 additional through pulling device body 1 outside, and is provided with fan 8 inside the gas hood 6, when the silicon rod is carried out by production completely, the temperature of steerable silicon rod, the bulk temperature of silicon rod forms to give off, improves the cooling effect of singly organizing the silicon rod to do benefit to the efficiency of the silicon rod production extraction in-process of organizing down.
When the invention is used: putting polysilicon raw materials into a quartz crucible 2 to wait for heating and melting, simultaneously adding boron, phosphorus, antimony and arsenic for mixing, raising the temperature of the quartz crucible 2 to 1450 ℃ in the heating process to reach the melting point of silicon, obtaining mixed silicon solution, controlling seed crystals to be slowly immersed into the silicon melt through a pulling device body 1, rapidly lifting the seed crystals upwards when the seed crystals are contacted with the silicon solution, enabling the silicon solution to climb upwards, pulling out the top crystals of the silicon rod to form the pulling of the top crystals, forming pulling speed control on the pulling device through an external control device, controlling the pulling speed so as to change the size of the silicon rod, simultaneously controlling the temperature of the silicon rod leaving the solution to play a role in determining the quality of the silicon rod, controlling a semiconductor refrigerator 9 to work to convey cold air into a temperature control ring 4 through an air conveying pipe 10 when the size of the silicon rod is determined, and controlling the temperature reduction hole 11 in the temperature control ring 4 to control the ambient temperature of the silicon rod, the silicon rod is located the inside formation of accuse temperature ring 4 and is carried, the silicon rod evenly carries and draws the in-process, accuse temperature ring 4 reduces the stability when the silicon rod shifts out, make the silicon rod external dimension shape fast, thereby carry out accurate control to the size of silicon rod, thereby improve silicon rod production quality, finally the silicon rod will be carried out completely, when silicon rod and liquid level separate, control lifting device body 1 reduces whole pulling rate, control silicon rod and silicon solution slowly separate, until behind the silicon rod afterbody formation cusp, can separate with the liquid level, guarantee the production quality of silicon rod, finally start the fan 8 that sets up in the gas hood 6, fan 8 will start to drive inside external gas gets into lifting device body 1, finally discharge through louvre 5, form quick heat dissipation to the silicon rod of production, improve the whole efficiency of cultivating of monocrystalline silicon.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (5)
1. A method for manufacturing a silicon single crystal ingot, comprising the steps of;
s1: feeding: the polycrystalline silicon raw material is put into a quartz crucible to wait for heating and melting, and simultaneously, boron, phosphorus, antimony and arsenic are added for mixing, thereby improving the production quality of the silicon raw material,
S2: melting: heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic, heating the polysilicon raw material and the added boron, phosphorus, antimony and arsenic by a crystal furnace, raising the heating temperature to 1450 ℃, wherein the temperature is higher than the melting point of the polysilicon, and quickly obtaining the polysilicon solution raw material,
S3: after necking down growth and polycrystalline silicon solution temperature stabilization, slowly immersing seed crystals into the silicon melt, and rapidly lifting the seed crystals upwards when the seed crystals are in contact with the silicon solution to enable the silicon solution to climb upwards to pull out crystals at the top of the silicon rod,
S4: growing while shouldering, controlling the speed and temperature at the neck to control the crystal to form a specified diameter, regulating the diameter of the crystal, and continuously stretching the crystal,
S5: the method comprises the steps of growing in an equal diameter mode, controlling the pulling speed of the silicon rod, controlling the temperature of the silicon rod in a moving mode, keeping the stability of the silicon rod when the silicon rod is moved out to be constant, ensuring that the diameter of the silicon rod is stably locked, determining the diameter of the silicon rod at the moment to form equal diameter growth, and acting on the follow-up cutting and taking of silicon wafers,
S6: when the tail part grows and the crystal bar is separated from the liquid level, the integral pulling speed is reduced, the crystal bar is controlled to be slowly separated from the silicon solution until the tail part of the silicon rod forms a sharp point, and the silicon rod can be separated from the liquid level to ensure the production quality of the silicon rod.
2. The utility model provides a monocrystalline silicon breeding device, its characterized in that, is including carrying and drawing device body (1), the bottom of carrying and drawing device body (1) is provided with quartz crucible (2), the middle part on the inside top of quartz crucible (2) is provided with accuse temperature ring (4), the inner wall evenly distributed of accuse temperature ring (4) has seted up cooling hole (11), the outer wall of accuse temperature ring (4) is provided with gas-supply pipe (10), semiconductor cooler (9) are installed to the outer wall of quartz crucible (2), and the air inlet of semiconductor cooler (9) is linked together with the end of gas-supply pipe (10).
3. A single crystal silicon cultivation apparatus as claimed in claim 2, wherein the frame (3) is fixed to both ends of the temperature control ring (4), and the top end of the frame (3) is fixed to the top end of the inside of the quartz crucible (2).
4. The monocrystalline silicon cultivation device according to claim 2, wherein the temperature control ring (4) is hollow, and the gas pipe (10) is communicated with the cooling hole (11) through the temperature control ring (4).
5. The device for cultivating monocrystalline silicon, as claimed in claim 2, wherein the pulling device body (1) is provided with an air hood (6) at the left side, the end of the air hood (6) is provided with an air suction port (7), the air hood (6) is internally provided with a fan (8), and the pulling device body (1) is provided with heat dissipation holes (5) at the right side.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116207078A (en) * | 2023-04-28 | 2023-06-02 | 智科博芯(北京)科技有限公司 | Chip structure and manufacturing and testing method thereof |
| CN117026364A (en) * | 2023-06-01 | 2023-11-10 | 清电光伏科技有限公司 | Crystal bar production method and device, auxiliary furnace chamber, electronic equipment and storage medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030040950A (en) * | 2001-11-17 | 2003-05-23 | 주식회사 실트론 | Grower for single crystalline silicon ingot |
| KR100750861B1 (en) * | 2006-02-25 | 2007-08-22 | 네오세미테크 주식회사 | Method for controlling pressure of furnace in apparatus for growth of single crystal using liquid-encapsulated czochralski method |
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| CN114457409A (en) * | 2021-12-30 | 2022-05-10 | 徐州鑫晶半导体科技有限公司 | Cooling device, crystal growth apparatus, and control method of crystal growth apparatus |
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| KR20030040950A (en) * | 2001-11-17 | 2003-05-23 | 주식회사 실트론 | Grower for single crystalline silicon ingot |
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| CN101994151A (en) * | 2009-08-11 | 2011-03-30 | 王正园 | Solar-grade Czochralski (CZ) silicon single crystal thermal donor control process |
| CN114457409A (en) * | 2021-12-30 | 2022-05-10 | 徐州鑫晶半导体科技有限公司 | Cooling device, crystal growth apparatus, and control method of crystal growth apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116207078A (en) * | 2023-04-28 | 2023-06-02 | 智科博芯(北京)科技有限公司 | Chip structure and manufacturing and testing method thereof |
| CN117026364A (en) * | 2023-06-01 | 2023-11-10 | 清电光伏科技有限公司 | Crystal bar production method and device, auxiliary furnace chamber, electronic equipment and storage medium |
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