CN114457409A - Cooling device, crystal growth apparatus, and control method of crystal growth apparatus - Google Patents

Cooling device, crystal growth apparatus, and control method of crystal growth apparatus Download PDF

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Publication number
CN114457409A
CN114457409A CN202111650923.8A CN202111650923A CN114457409A CN 114457409 A CN114457409 A CN 114457409A CN 202111650923 A CN202111650923 A CN 202111650923A CN 114457409 A CN114457409 A CN 114457409A
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Prior art keywords
cooling
crystal
gas
cooling device
preset
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CN202111650923.8A
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CN114457409B (en
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黄末
陈俊宏
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Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
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Xuzhou Xinjing Semiconductor Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a cooling device, crystal growth equipment and a control method of the crystal growth equipment, wherein the cooling device is used for the crystal growth equipment and is used for cooling a crystal, the crystal is provided with a plurality of preset regions, each preset region corresponds to a preset temperature interval, and the cooling device comprises: the cooling jacket is suitable for the cover to locate outside the crystal, and the internal perisporium of cooling jacket is spaced apart from the periphery wall of crystal, and the cooling jacket includes a plurality of cooling sections that set gradually along the axial of cooling jacket, and every cooling section is used for cooling to corresponding the region of predetermineeing, and prescribes a limit to air outlet channel and coolant liquid passageway in every cooling section, and air flow channel has the gas outlet, and the gas outlet is suitable for blowing cooling gas towards the crystal, has the coolant liquid in the coolant liquid passageway, and the coolant liquid is used for adjusting the temperature of the cooling gas in the air flow channel. The cooling device has simple structure and low manufacturing cost, and can improve the quality of crystals.

Description

Cooling device, crystal growth apparatus, and control method of crystal growth apparatus
Technical Field
The invention relates to the technical field of crystal production equipment, in particular to a cooling device, crystal growth equipment and a control method of the crystal growth equipment.
Background
In the crystal growth process, point defects are generated on a solid-liquid interface, diffusion, recombination and other reactions are generated along with the crystal cooling process, and finally, the point defects are agglomerated and formed into defects by supersaturation precipitation in a specific temperature range, so that different defects and oxide precipitates are generated along with the cooling of the crystals in different areas in the auxiliary chamber, more crystal defects are generated, and the proportion of perfect crystals is smaller.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the above-mentioned problems in the prior art. Therefore, the invention provides a cooling device which has a simple structure and low manufacturing cost and can improve the quality of crystals.
According to an embodiment of the present invention, a cooling apparatus is used for a crystal growth device, and is used for cooling a crystal, the crystal has a plurality of preset regions, each preset region corresponds to a preset temperature interval, and the cooling apparatus includes: the cooling jacket is suitable for being sleeved outside the crystal body, the inner peripheral wall of the cooling jacket is spaced from the outer peripheral wall of the crystal body, the cooling jacket comprises a plurality of cooling sections which are sequentially arranged along the axial direction of the cooling jacket, each cooling section is used for cooling the corresponding preset area, a gas flow channel and a cooling liquid channel are defined in each cooling section, the gas flow channel is provided with a gas outlet, the gas outlet is suitable for blowing cooling gas towards the crystal body, the cooling liquid channel is internally provided with cooling liquid, and the cooling liquid is used for adjusting the temperature of the cooling gas in the gas flow channel.
According to the cooling device provided by the embodiment of the invention, the cooling device is simple in structure and low in manufacturing cost, and the produced crystal has smaller defect size, smaller defect density and higher quality.
In addition, the cooling device according to the embodiment of the invention may further have the following additional technical features:
according to some embodiments of the invention, the air flow channel extends spirally along an axial direction of the cooling jacket, and the air outlet of the cooling section is plural and arranged at intervals along the axial direction and/or the circumferential direction of the cooling jacket.
According to some embodiments of the invention, the opening area of at least one of the air outlets is gradually reduced in the direction of the air flow; and/or at least one air outlet is provided with an adjusting valve for adjusting the flow of the air flow corresponding to the air outlet; and/or at least one air outlet is provided with an air dispersing piece, and a plurality of air dispersing holes are formed in the air dispersing piece.
According to some embodiments of the invention, the air flow channel surrounds the outside of the coolant channel.
According to some embodiments of the invention, the cooling fluid channel extends helically in the axial direction of the cooling jacket.
According to some embodiments of the invention, the gas outlet has a gas outlet end, and a central axis of the gas outlet end forms a non-zero included angle with a radial direction of the cooling jacket, so that a gas outlet direction of the gas outlet is opposite to a rotation direction of the crystal in a circumferential direction of the cooling jacket.
According to some embodiments of the present invention, the temperatures of a plurality of the preset regions are gradually decreased from bottom to top, and the number of the air outlets of a plurality of the cooling sections is gradually increased from bottom to top; and/or the outlet gas flow of the plurality of cooling sections is gradually increased from bottom to top.
According to some embodiments of the present invention, the plurality of preset regions includes a first preset region and a second preset region, the plurality of cooling sections includes a first cooling section and a second cooling section, the first cooling section corresponds to the first preset region, the first preset region corresponds to a first preset temperature interval, the second cooling section corresponds to the second preset region, the second preset region corresponds to a second preset temperature interval, and a temperature of the first preset temperature interval is lower than a temperature of the second preset temperature interval.
According to some embodiments of the invention, the first predetermined temperature interval is 700 ℃ to 900 ℃ and the second predetermined temperature interval is 950 ℃ to 1100 ℃.
According to another aspect of the invention, the crystal growth equipment comprises a furnace body and the cooling device, wherein the cooling device is arranged in the furnace body and is used for cooling the crystal.
According to some embodiments of the invention, the cooling device is movable relative to the furnace body in an axial direction of the furnace body.
The invention also provides a control method of the crystal growth equipment, which comprises the following steps: and in the stage of crystal equal-diameter growth, adjusting the airflow of the air outlet corresponding to the cooling section according to the current length of the crystal.
According to some embodiments of the invention, when the current length of the crystal is within a first length range, the gas flow rate at the gas outlet is 0; when the current length of the crystal is within a second length range, the airflow flow of the air outlet is 20-50 slpm; when the current length of the crystal is within a third length range, the gas flow rate at the gas outlet does not exceed 30 slpm.
Drawings
FIG. 1 is a schematic view of a partial structure of a crystal growing apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a coolant passage and an air flow passage of a cooling device according to an embodiment of the present invention;
FIG. 3 is a schematic view of the structure of the air diffuser of the cooling device according to one embodiment of the present invention;
FIG. 4 is a schematic view of a cooling device and crystal according to one embodiment of the invention;
FIG. 5 is a schematic view of the temperature variation and defect growth of a crystal according to one embodiment of the present invention;
FIG. 6 is a flowchart of a method of controlling a crystal growing apparatus according to one embodiment of the present invention;
fig. 7 is a flowchart of a control method of a crystal growth apparatus according to another embodiment of the present invention.
Reference numerals:
the device comprises crystal growth equipment 100, a cooling device 10, a cooling jacket 1, a cooling section 11, a first cooling section 111, a second cooling section 112, an air flow channel 12, a cooling liquid channel 13, an air outlet 14, an air dispersing part 2, an air dispersing hole 21, a furnace body 20, a solid-liquid interface 30, a main chamber 2011, an auxiliary chamber 2021 and a crystal 200.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically connected, electrically connected or can communicate with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
Next, a cooling device 10 according to an embodiment of the present invention is described with reference to the drawings.
The present inventors have studied the growth and cooling process of the crystal (for example, the process of cooling the crystal while gradually rising the crystal to the sub-chamber), and found that the cooling state of the crystal is as shown in fig. 5, the crystal generates point defects at the solid-liquid interface to maintain the equilibrium concentration, and the temperature of the crystal is lowered to Tn～TmWithin the range, the point defects undergo reactions such as diffusion and recombination, and the crystal temperature is lowered to Tc～TnIn this range, supersaturated point defects start to precipitate to form micro defects such as COP, FPD, LSTD and the like, and the micro defects continue to grow, lowering the crystal temperature to 700 ℃ to TcWhen the amount is within the above range, the residual point defects promote the formation of oxide precipitates.
Based on this, the application provides a cooling device 10, cooling device 10's simple structure, and the installation is convenient, and is good to the cooling effect of crystal 200, can make crystal 200 pass through the temperature interval that the defect formed fast in the growth process, reduces the defect size and the defect density of the crystal that produces in crystal growth equipment 100, has improved the production quality of crystal.
As shown in fig. 1, the cooling device 10 is used in a crystal growth apparatus 100 for cooling a crystal 200, the crystal 200 has a plurality of predetermined regions, each of which corresponds to a predetermined temperature range, that is, the cooling device 10 can cool the crystal 200 to gradually lower the temperature of the crystal 200 during the growth of the crystal 200, while the crystal 200 is grown in the axial direction of the crystal growth apparatus 100, and the temperatures of respective portions of the crystal 200 in the axial direction thereof are different.
The cooling device 10 according to the embodiment of the invention may include a cooling jacket 1, the cooling jacket 1 is adapted to be sleeved outside the crystal 200, and an inner peripheral wall of the cooling jacket 1 is spaced apart from an outer peripheral wall of the crystal 200, so as to prevent the movement of the crystal 200 from being influenced by the arrangement of the cooling jacket 1, and prevent the crystal 200 from contacting the cooling device 10 during the growth process, influencing the growth of the crystal 200, and even damaging the cooling device 10.
The cooling jacket 1 comprises a plurality of cooling sections 11 sequentially arranged along the axial direction of the cooling jacket 1, each cooling section 11 is used for cooling a corresponding preset region, that is, a plurality of preset regions of the crystal 200 are sequentially arranged along the axial direction of the crystal 200, each cooling section 11 corresponds to one preset region respectively, for example, the height position of each cooling section 11 is consistent with that of the corresponding preset region, so that the corresponding preset region has a certain temperature gradient nearby and is rapidly cooled from the preset temperature interval, the time of the temperature of the preset region in the corresponding preset temperature interval is shortened as far as possible, that is, the time of the preset region in the preset temperature interval is shortened, the crystal 200 can rapidly pass through the preset temperature interval which is easy to generate defects, the aggregation and growth time of the defects of the crystal 200 is greatly shortened, and the formation, growth and growth of defect nuclei in the crystal 200 are inhibited, the produced crystal 200 has smaller defect size, smaller defect density and higher quality of the crystal 200, and the proportion of perfect crystals is effectively improved, namely the proportion of the crystal 200 with smaller defects occupies the whole crystal 200.
Wherein, inject air flow channel 12 and coolant liquid passageway 13 in every cooling section 11, air flow channel 12 has gas outlet 14, gas outlet 14 is suitable for blowing cooling gas towards crystal 200, have the coolant liquid in the coolant liquid passageway 13, the coolant liquid is used for adjusting the temperature of the cooling gas in air flow channel 12, make the temperature of the cooling gas that cooling device 10 blew off have nimble controllability, thereby the cooling effect that makes cooling device 10 can reach has the regulation flexibility of wider scope, with adapt to different crystal growth equipment 100 better, or different regional differentiation demands to the cooling effect of predetermineeing in difference, effectively promoted cooling device 10's suitability and practicality. Optionally, the cooling gas may be one or a mixture of several of nitrogen, inert gas, and the like, so that the usage amount of the shielding gas of the crystal growth apparatus 100 may be appropriately reduced to some extent, and the usage requirement of the shielding gas may be reduced.
It is understood that the gas flow channels 12 of the cooling sections 11 of the cooling device 10 are independently arranged, and the cooling liquid channels 13 of the cooling sections 11 of the cooling device 10 are independently arranged, so as to control the gas temperature and the cooling liquid temperature in the cooling sections 11, and to better control the temperature reduction speed of the crystal 200. Alternatively, the gas flow passages 12 of the plurality of cooling sections 11 of the cooling device 10 may be communicated with each other, and the cooling liquid passages 13 of the plurality of cooling sections 11 of the cooling device 10 may be communicated with each other, thereby making the structure of the cooling device 10 simple, convenient to install, and further making the overall structure of the crystal growth apparatus 100 simpler and less expensive to manufacture.
According to the cooling device 10 of the embodiment of the invention, the cooling device 10 is simple in structure and low in manufacturing cost, the produced crystal 200 is smaller in defect size and defect density, the quality of the crystal 200 is improved, and the proportion of perfect crystals is favorably improved.
It can be understood that, during the growth of the crystal 200, the cooling gas blown by the cooling device 100 directly blows over the surface of the crystal 200 to rapidly cool the crystal 200, thereby reducing the extra cooling time required after the growth of the crystal 200 is completed; after the crystal 200 is separated from the solid-liquid interface 30, the crystal 200 gradually rises and completely enters the auxiliary chamber, and the tail of the crystal 200 is rapidly cooled by the cooling device 10, so that the overall cooling time of the crystal 200 is reduced.
In some embodiments, the airflow channel 12 extends spirally along the axial direction of the cooling jacket 1, and the spirally extending airflow channel 12 can be arranged around the crystal 200, so that the position of the air outlet 14 can be flexibly arranged, which is beneficial to cooling each part of the outer peripheral wall of the crystal 200 by the cooling device 10, improving the temperature control effect and improving the quality of the crystal 200.
Wherein, as shown in fig. 1, the air outlet 14 of the cooling section 11 is plural, and the plural air outlets 14 are arranged at intervals along the axial direction and/or the circumferential direction of the cooling jacket 1, the cooling gas is suitable for being blown around the crystal 200 through the plural air outlets 14 arranged at intervals, so as to ensure the blowing range of the cooling gas of the cooling section 11, and the cooling gas can be blown around the crystal 200 more uniformly.
In some embodiments of the present invention, the opening area of at least one air outlet 14 gradually decreases in the direction of air flow; and/or, at least one air outlet 14 is provided with a regulating valve for regulating the flow rate of the air flow at the corresponding air outlet 14; and/or, an air dispersing piece 2 is arranged at the position of at least one air outlet 14, and a plurality of air dispersing holes 21 are formed in the air dispersing piece 2.
It should be noted that in the description of the present application, "and/or" is meant to include a plurality of parallel schemes, taking "a and/or B" as an example, and including a scheme a, a scheme B, and a scheme that a and B satisfy simultaneously; then "a, and/or, B, and/or, C" includes a scenario a, a scenario B, a scenario C, a scenario with both a and B satisfied, a scenario with both a and C satisfied, a scenario with both B and C satisfied, and a scenario with both B and C satisfied, A, B and C satisfied.
In some embodiments, the opening area of at least one gas outlet 14 is gradually reduced in the gas flow direction to appropriately increase the outlet flow rate of the cooling gas at the gas outlet 14, so that the cooling gas can be blown around the crystal 200 to effectively cool the crystal 200.
Alternatively, the opening area of each air outlet 14 is gradually reduced in the air flow direction. Of course, in other embodiments, the opening area of one portion of the plurality of air outlets 14 gradually decreases in the airflow direction, and the opening area of another portion may remain constant.
In some embodiments, at least one of the air outlets 14 is provided with a regulating valve for regulating the flow rate of the air flow at the corresponding air outlet 14, so as to realize the regulation of the cooling effect of the crystal 200 by the cooling device 10; for example, if the airflow rate at the gas outlet 14 is increased, the cooling gas can achieve a better cooling effect on the crystal 200, so as to rapidly reduce the temperature of the crystal 200 and increase the cooling rate of the crystal 200, and conversely, if the airflow rate at the gas outlet 14 is decreased, the cooling effect of the cooling gas on the crystal 200 can be decreased, and the cooling rate of the crystal 200 is slowed down.
It can be seen that the number of air outlets 14 provided with a regulating valve is less than or equal to the total number of air outlets 14.
Therefore, by controlling the regulating valves arranged at the gas outlets 14, the flow rate of the cooling gas at each gas outlet 14 of the cooling device 10 can be controlled, and by controlling the flow rate of the cooling gas at each gas outlet 14, the gas outlets 14 at different positions can cooperate with each other, so that the time that the crystal 200 is in the preset temperature range is as short as possible, and the crystal 200 can more quickly pass through the temperature range in which defects are easy to generate.
In some embodiments, referring to fig. 3, an air diffuser 2 is provided at least one air outlet 14, and the air diffuser 2 is formed with a plurality of air diffusing holes 21. The air outlet range of the cooling gas flowing out through the air dispersing piece 2 is larger, so that the air outlet of the cooling device 10 is soft, the impact force of the cooling gas on the crystal 200 is smaller, and the phenomenon of air outlet concentration of the cooling gas at the air outlet 14 can be avoided.
In some embodiments, as shown in fig. 2, the airflow channel 12 surrounds the outside of the cooling liquid channel 13, so as to ensure that the airflow channel 12 and the cooling liquid channel 13 have a large heat exchange area, and ensure that the cooling liquid in the cooling liquid channel 13 cools the cooling gas in the airflow channel 12, which is beneficial to improving the temperature control effect of the cooling device 10.
For example, referring to fig. 2, the cooling jacket 1 includes an inner cylinder and an outer cylinder, the outer cylinder is disposed coaxially with the inner cylinder, the outer cylinder is sleeved outside the inner cylinder, the inner cylinder defines a cooling liquid channel 13, and an inner wall of the outer cylinder and an outer wall of the inner cylinder define an air flow channel 12, so that the overall structure of the cooling device 10 is more compact, and the overall structure of the cooling device 10 is more reasonable. Of course, the outer cylinder and the inner cylinder of the cooling jacket 1 can also be arranged eccentrically, so that the outer cylinder and the inner cylinder are relatively flexibly arranged.
In some embodiments, the cooling liquid channel 13 extends helically in the axial direction of the cooling jacket 1, whereby the helically extending cooling liquid channel 13 and the helically extending air flow channel 12 can have the same extension path, so that the air flow channel 12 is arranged around the entire cooling liquid channel 13.
Further, as shown in fig. 3, the gas outlet 14 has a gas outlet end, a non-zero included angle is formed between the central axis of the gas outlet end and the radial direction of the cooling jacket 1, that is, α ≠ 0 °, so that the gas outlet direction of the gas outlet 14 is opposite to the rotation direction of the crystal 200 in the circumferential direction of the cooling jacket 1, so that the cooling gas and the outer peripheral wall of the crystal 200 are arranged in a substantially "counter-flow" manner, which is beneficial to improving the heat exchange efficiency between the cooling gas and the crystal 200, ensuring the cooling effect of the cooling gas on the crystal 200, and avoiding the enrichment of a certain part of the cooling gas on the crystal 200, improving the cooling effect, and further improving the temperature control effect of the cooling device 10.
Alternatively, in the example of FIG. 3, α can satisfy 30 ≦ α ≦ 70.
In some embodiments, referring to fig. 1, since the crystal 200 is grown from the solid-liquid interface 30 below and is gradually cooled during the upward pulling, the temperature of the crystal 200 is lower as the distance from the solid-liquid interface 30 is longer in the up-down direction, and thus the temperatures of the plurality of predetermined regions are gradually reduced from the bottom to the top.
The number of the air outlets 14 of the cooling sections 11 is gradually increased from bottom to top, and for any two cooling sections 11, the number of the air outlets 14 of the lower cooling section 11 is less than that of the air outlets 14 of the upper cooling section 11, and under the same air outlet condition, the cooling effect of the upper cooling section 11 is better than that of the lower cooling section 11, which is beneficial to accelerating the cooling speed of the generated crystal 200 part, and further reducing the overall cooling time of the crystal 200.
Or the gas outlet flow of the cooling sections 11 is gradually increased from bottom to top, so that for any two cooling sections 11, the gas outlet flow of the lower cooling section 11 is smaller than that of the upper cooling section 11, and under the same gas outlet condition, the cooling effect of the upper cooling section 11 is better than that of the lower cooling section 11, which is beneficial to accelerating the cooling speed of the generated crystal 200 part, and further reducing the overall cooling time of the crystal 200.
It can be understood that the outlet flow of the cooling section 11 can be regulated and controlled by reasonably setting the number, the opening area, the outlet flow rate, and the like of the outlets 14 of the cooling section 11.
Or, the number of the air outlets 14 of the plurality of cooling sections 11 gradually increases from bottom to top, and the air outlet flow of the plurality of cooling sections 11 gradually increases from bottom to top, which is also beneficial to accelerating the cooling speed of the generated crystal 200 part, thereby reducing the overall cooling time of the crystal 200.
In some embodiments, as shown in fig. 1, the plurality of predetermined regions includes a first predetermined region and a second predetermined region, the plurality of cooling sections 11 includes a first cooling section 111 and a second cooling section 112, the first cooling section 111 corresponds to the first predetermined region, the first predetermined region corresponds to a first predetermined temperature interval, the second cooling section 112 corresponds to the second predetermined region, the second predetermined region corresponds to a second predetermined temperature interval, and the temperature of the first predetermined temperature interval is lower than the temperature of the second predetermined temperature interval.
The first cooling section 111 is configured to cool the first preset region such that the temperature of the first preset region is rapidly decreased to reduce the time when the temperature of the first preset region is within the first preset temperature interval, and the second cooling section 112 is configured to cool the second preset region such that the temperature of the second preset region is rapidly decreased to reduce the time when the temperature of the second preset region is within the second preset temperature interval.
It can be understood that, in the process of reducing the temperature of the second predetermined region from the second predetermined temperature region, the temperature may be reduced to the first predetermined temperature region, and since the crystal 200 is in the growth stage at the same time, the position of the second predetermined region may correspond to the first cooling section 111, that is, the second predetermined region is formed as the "first predetermined region", and the first cooling section 111 may enable the temperature of the second predetermined region to rapidly pass through the first predetermined temperature region.
Of course, the number of the predetermined regions may also be three or more, and in this case, the cooling section 11 may be three or more.
Optionally, the number of the gas outlets 14 of the first cooling section 111 is greater than the number of the gas outlets 14 of the second cooling section 112, which is beneficial to reducing the overall cooling time of the crystal 200.
Optionally, the gas outlet flow of the first cooling section 111 is greater than the gas outlet flow of the second cooling section 112, which is beneficial to reducing the overall cooling time of the crystal 200
Still further, by the synergistic effect of the first cooling section 111 and the second cooling section 112, the aggregation and growth time of the crystal 200 defects can be eliminated, thereby suppressing the formation of defect nuclei of the crystal 200. And under the synergistic effect of the first cooling section 111 and the second cooling section 112, the time of the crystal 200 passing through the preset temperature interval of defect generation can be ensured to be shortest as possible, so that the defect size is further reduced, and the defect density of the crystal 200 is reduced.
The inventor finds that the crystal 200 is easy to form point defects to be separated out in a temperature range of 950-1100 ℃, and the point defects of the crystal 200 grow up rapidly in a temperature range of 700-900 ℃, for this reason, the first preset temperature range is set to be 700-900 ℃, the second preset temperature range is set to be 950-1100 ℃, so that the temperature of the second preset area of the crystal 200 is rapidly reduced from 950-1100 ℃, the time for separating out the point defects of the crystal 200 is reduced, the density of the point defects is reduced, meanwhile, the temperature of the first preset area of the crystal 200 is rapidly reduced from 700-900 ℃, the time for growing the point defects of the crystal 200 is reduced, and the growth of the point defects is inhibited.
It can be understood that, in the process of reducing the temperature of the second predetermined region from 950 ℃ to 1100 ℃, the temperature is reduced to a temperature range of 700 ℃ to 900 ℃, and since the crystal 200 is in the growth stage at the same time, the position of the second predetermined region corresponds to the first cooling section 111, that is, the second predetermined region is formed as a "first predetermined region", and the first cooling section 111 can enable the temperature of the second predetermined region to rapidly pass through the temperature range of 700 ℃ to 900 ℃.
That is, the first cooling section 111 is suitable for cooling the part of the crystal 200 with the temperature of 700 ℃ to 900 ℃, and the second cooling section 112 is suitable for cooling the part of the crystal 200 with the temperature of 950 ℃ to 1100 ℃, so that the crystal 200 can rapidly pass through the temperature range formed by two defects of 950 ℃ to 1100 ℃ and 700 ℃ to 900 ℃ in the growth process due to the introduction of the cooling gas, the defect size and the defect density of the crystal 200 generated in the crystal growth apparatus 100 are reduced, and the production quality of the crystal 200 is improved.
Alternatively, in the example of fig. 1, the first cooling section 111 is adapted to be provided in the main chamber 2011 of the crystal growth apparatus 100, and the second cooling section 112 is adapted to be provided in the sub-chamber 2021 of the crystal growth apparatus 100.
The crystal growth apparatus 100 according to the second embodiment of the present invention includes a furnace body 20 and the cooling device 10 described above, and the cooling device 10 is provided in the furnace body 20 and is used for cooling the crystal 200.
According to the crystal growth apparatus 100 of the embodiment of the present invention, by using the cooling device 10 described above, the proportion of perfect crystals can be increased.
Further, the cooling device 10 can move relative to the furnace body 20 along the axial direction of the furnace body 20, so as to adjust the position of the cooling device 10 relative to the furnace body 20 in the axial direction of the furnace body 20, so that the cooling device 10 can move to the position of the cooling section 11 corresponding to the corresponding preset area, and meanwhile, the cooling device 10 can adapt to the position differentiation requirements of different preset areas.
The present invention further provides a method for controlling the crystal growth apparatus 100, as shown in fig. 4, the method for controlling the crystal growth apparatus 100 includes the steps of: and in the stage of crystal isodiametric growth, the airflow flow of the air outlet 14 of the cooling section 11 is adjusted according to the current length of the crystal.
S1, the crystal enters an equal-diameter growth stage;
specifically, the crystal 200 is grown at the solid-liquid interface 30, and as the crystal 200 is pulled upward, the crystal 200 moves to the stage of the constant diameter growth while the crystal 200 is being pulled upward, and the grown crystal 200 can be formed into a rod having a uniform thickness from top to bottom.
And S2, adjusting the airflow rate of the air outlet of the cooling section according to the current length of the crystal.
Through the air flow of control gas outlet 14, can accurately control the cooling effect of cooling section 11 to acquire required temperature gradient, thereby reduce the temperature of crystal 200 fast, make crystal 200 pass through the temperature interval that the defect formed fast, make the gathering and the growth time of crystal 200 defect reduce greatly, with the formation and the growth of restraining the interior defect nucleus of crystal 200, further reduce the defect size, reduce crystal 200 defect density.
In some alternative embodiments, as shown in fig. 5, step S2 includes:
s21, when the current length of the crystal is within the first length range, the current length of the crystal is smaller, for example, the crystal does not extend into the cooling jacket 1, the overall temperature of the crystal 200 is higher, and the temperature of the crystal 200 is not cooled to the preset temperature range, the airflow rate of the air outlets 14 is controlled to be 0, that is, the airflow rates of all the air outlets 14 are 0, so as to save the production cost.
Optionally, when the current length of the crystal 200 is within the first length range, the current length of the crystal 200 is less than 15% of the total length of the produced crystal 200, so as to match the crystal 200 within the first length range with the arrangement position of the cooling device 10. For example, the first length may be in the range of 0 to 200 mm.
S22, when the current length of the crystal is within the second length range, at this time, a part of the crystal extends into the cooling jacket 1, and the temperature of the corresponding part of the crystal 200 is reduced to a preset temperature range, the airflow rate of the air outlet 14 is controlled to be 20 slpm-50 slpm, that is, the airflow rate of all the air outlets 14 is within the above range, the cooling device 10 can rapidly cool the crystal 200, so that the crystal 200 can rapidly pass through the temperature range in which defects are formed, the defect size and the defect density of the crystal 200 generated in the crystal growth equipment 100 are reduced, and the production quality of the crystal 200 is improved.
Wherein "slpm" (standard weights per minute) refers to standard Liters per minute.
Optionally, when the current length of the crystal 200 is in the second length range, the current length of the crystal 200 is 15% to 60% of the total length of the crystal 200 produced, so as to match the crystal 200 in the second length range with the arrangement position of the cooling device 10. For example, the second length may range from 200mm to 1000mm, for example.
Optionally, the outlet gas flow of the plurality of cooling segments 11 gradually increases from bottom to top, and the temperature of the crystal 200 gradually decreases from bottom to top, so as to match the cooling effect of the cooling segments 11 with the cooling effect required by the corresponding preset area.
Optionally, in the example of fig. 1, the central axis of the cooling device 10 is parallel to the central axis of the furnace body, for a plurality of air outlets 14 of the cooling device 10, the flow rates of the air outlets 14 at the same height position are the same, the flow rate of the air outlet 14 farther from the solid-liquid interface 30 is greater than the flow rate of the air outlet 14 closer to the solid-liquid interface 30, that is, for the upper and lower air outlets 14, the flow rate of the air outlet 14 above is greater than the flow rate of the air outlet 14 below, and the temperature of the crystal 200 is gradually reduced from bottom to top, so as to further facilitate that the cooling effect of the cooling section 11 matches with the cooling effect required by the corresponding portion of the crystal 200.
S23, when the current length of the crystal is in the third length range, the length of the crystal is longer, and the tail end of the crystal is closer to the cooling device 10, the air flow rate of the air outlets 14 is controlled not to exceed 30slpm, that is, the air flow rates of all the air outlets 14 are in the above range, so as to realize the cooling of the whole crystal quickly.
Alternatively, when the current length of the crystal 200 is in the third length range, the current length of the crystal 200 is 60% to 100% of the total length of the produced crystal 200, so that the crystal 200 in the second length range can be matched with the arrangement position of the cooling device 10. For example, the third length may range from 1000mm to 1700mm, for example.
Therefore, the flow at the gas outlets 14 is controlled, so that the gas outlets 14 can cooperate with each other, the time of the crystal 200 passing through the temperature range of defect generation is shortest as possible, the defect size is further reduced, and the defect density of the crystal 200 is reduced.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (13)

1. A cooling device (10), wherein the cooling device (10) is used in a crystal growing apparatus (100) and is configured to cool a crystal (200), the crystal (200) having a plurality of predetermined regions, each of the predetermined regions corresponding to a predetermined temperature interval, the cooling device (10) comprising:
the cooling jacket (1) is suitable for being sleeved outside the crystal (200), the inner peripheral wall of the cooling jacket (1) is spaced from the outer peripheral wall of the crystal (200), the cooling jacket (1) comprises a plurality of cooling sections (11) which are sequentially arranged along the axial direction of the cooling jacket (1), each cooling section (11) is used for cooling the corresponding preset area, a gas flow channel (12) and a cooling liquid channel (13) are defined in each cooling section (11), the gas flow channel (12) is provided with a gas outlet (14), the gas outlet (14) is suitable for blowing cooling gas towards the crystal (200), and the cooling liquid channel (13) is provided with cooling liquid therein, and the cooling liquid is used for adjusting the temperature of the cooling gas in the gas flow channel (12).
2. The cooling device (10) according to claim 1, wherein the air flow channel (12) extends helically in the axial direction of the cooling jacket (1), and the air outlets (14) of the cooling section (11) are plural and arranged at intervals in the axial and/or circumferential direction of the cooling jacket (1).
3. A cooling device (10) according to claim 2, characterized in that the opening area of at least one of the air outlets (14) is gradually reduced in the air flow direction; and/or the presence of a gas in the gas,
at least one air outlet (14) is provided with a regulating valve for regulating the flow of the air flow corresponding to the air outlet (14); and/or the presence of a gas in the gas,
an air dispersing piece (2) is arranged at the position of at least one air outlet (14), and a plurality of air dispersing holes (21) are formed in the air dispersing piece (2).
4. A cooling device (10) according to claim 1, characterized in that the air flow channel (12) is surrounded on the outside of the cooling liquid channel (13).
5. A cooling device (10) according to claim 4, characterized in that the cooling liquid channel (13) extends helically in the axial direction of the cooling jacket (1).
6. The cooling device (10) according to claim 1, wherein the gas outlet (14) has a gas outlet end, and a central axis of the gas outlet end forms a non-zero included angle with a radial direction of the cooling jacket (1), so that a gas outlet direction of the gas outlet (14) and a rotation direction of the crystal (200) are opposite in a circumferential direction of the cooling jacket (1).
7. The cooling device (10) according to claim 1, wherein the temperatures of a plurality of the preset regions are gradually reduced from bottom to top,
the number of the air outlets (14) of the plurality of cooling sections (11) is gradually increased from bottom to top; and/or the presence of a gas in the gas,
the outlet gas flow of the cooling sections (11) is gradually increased from bottom to top.
8. The cooling device (10) according to any one of claims 1 to 7, wherein the plurality of preset regions includes a first preset region and a second preset region, the plurality of cooling sections (11) includes a first cooling section (11) and a second cooling section (11), the first cooling section (11) corresponds to the first preset region, the first preset region corresponds to a first preset temperature interval, the second cooling section (11) corresponds to the second preset region, the second preset region corresponds to a second preset temperature interval, and a temperature of the first preset temperature interval is lower than a temperature of the second preset temperature interval.
9. The cooling device (10) according to claim 8, characterized in that said first preset temperature interval is comprised between 700 ℃ and 900 ℃ and said second preset temperature interval is comprised between 950 ℃ and 1100 ℃.
10. Crystal growth apparatus (100), characterized in that it comprises a furnace body (20) and a cooling device (10) according to any one of claims 1-9, said cooling device (10) being provided inside said furnace body (20) and being adapted to cool said crystal.
11. The crystal growth apparatus (100) according to claim 10, characterized in that the cooling device (10) is movable relative to the furnace body (20) in the axial direction of the furnace body (20).
12. A control method of a crystal growth apparatus (100), the crystal growth apparatus (100) being the crystal growth apparatus (100) according to claim 12, the control method comprising the steps of:
and in the stage of crystal isodiametric growth, adjusting the airflow flow of the air outlet (14) of the cooling section (11) according to the current length of the crystal.
13. The method of controlling a crystal growth apparatus (100) according to claim 14,
when the current length of the crystal is in a first length range, the airflow flow of the air outlet (14) is 0;
when the current length of the crystal is in a second length range, the airflow flow of the air outlet (14) is 20-50 slpm;
when the current length of the crystal is within a third length range, the gas flow rate at the gas outlet (14) is no more than 30 slpm.
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