CN114457409B - Cooling device, crystal growth apparatus, and control method of crystal growth apparatus - Google Patents

Cooling device, crystal growth apparatus, and control method of crystal growth apparatus Download PDF

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Publication number
CN114457409B
CN114457409B CN202111650923.8A CN202111650923A CN114457409B CN 114457409 B CN114457409 B CN 114457409B CN 202111650923 A CN202111650923 A CN 202111650923A CN 114457409 B CN114457409 B CN 114457409B
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Prior art keywords
cooling
crystal
preset
air outlet
air
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CN114457409A (en
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黄末
陈俊宏
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Zhonghuan Leading Semiconductor Technology Co ltd
Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd
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Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The application discloses a cooling device, crystal growth equipment and a control method of the crystal growth equipment, wherein the cooling device is used for the crystal growth equipment and is used for cooling crystals, the crystals are provided with a plurality of preset areas, each preset area corresponds to a preset temperature interval, and the cooling device comprises: the cooling jacket is suitable for being sleeved outside the crystal, the inner peripheral wall of the cooling jacket is spaced from the outer peripheral wall of the crystal, the cooling jacket comprises a plurality of cooling sections which are sequentially arranged along the axial direction of the cooling jacket, each cooling section is used for cooling a corresponding preset area, an air flow channel and a cooling liquid channel are defined in each cooling section, the air flow channel is provided with an air outlet, the air outlet is suitable for blowing cooling gas towards the crystal, cooling liquid is arranged in the cooling liquid channel, and the cooling liquid is used for adjusting the temperature of the cooling gas in the air flow channel. The cooling device has a simple structure and low manufacturing cost, and can improve the quality of crystals.

Description

Cooling device, crystal growth apparatus, and control method of crystal growth apparatus
Technical Field
The application relates to the technical field of crystal production equipment, in particular to a cooling device, crystal growth equipment and a control method of the crystal growth equipment.
Background
In the crystal growth process, point defects are generated at a solid-liquid interface, diffusion, recombination and other reactions occur along with the cooling process of the crystal, and finally, the defects are formed by coalescence through supersaturation precipitation in a specific temperature range, so that different defects and oxygen precipitates are generated along with the cooling of the crystal in different areas in a secondary chamber, more crystal defects are caused, and the perfect crystal proportion is smaller.
Disclosure of Invention
The present application aims to solve, at least to some extent, one of the above technical problems in the prior art. Therefore, the application provides the cooling device which has a simple structure and low manufacturing cost and can improve the quality of crystals.
According to an embodiment of the present application, a cooling device is used for a crystal growing apparatus and is used for cooling a crystal, the crystal has a plurality of preset regions, each of the preset regions corresponds to a preset temperature interval, and the cooling device includes: the cooling jacket is suitable for being sleeved outside the crystal, the inner peripheral wall of the cooling jacket is spaced from the outer peripheral wall of the crystal, the cooling jacket comprises a plurality of cooling sections which are sequentially arranged along the axial direction of the cooling jacket, each cooling section is used for cooling the corresponding preset area, an air flow channel and a cooling liquid channel are defined in each cooling section, the air flow channel is provided with an air outlet, the air outlet is suitable for blowing cooling gas towards the crystal, cooling liquid is arranged in the cooling liquid channel, and the cooling liquid is used for adjusting the temperature of the cooling gas in the air flow channel.
According to the cooling device provided by the embodiment of the application, the cooling device is simple in structure and low in manufacturing cost, and the defect size, defect density and crystal quality of the produced crystal are smaller.
In addition, the cooling device according to the embodiment of the application may further have the following additional technical features:
according to some embodiments of the application, the air flow channel extends along the axial direction of the cooling jacket in a spiral manner, and the air outlets of the cooling sections are multiple and are arranged at intervals along the axial direction and/or the circumferential direction of the cooling jacket.
According to some embodiments of the application, the opening area of at least one of the air outlets decreases gradually in the direction of the air flow; and/or at least one air outlet is provided with a regulating valve for regulating the air flow at the corresponding air outlet; and/or at least one air outlet is provided with an air dispersing piece, and a plurality of air dispersing holes are formed in the air dispersing piece.
According to some embodiments of the application, the air flow channel surrounds the outside of the coolant channel.
According to some embodiments of the application, the cooling fluid channel extends helically along the axial direction of the cooling jacket.
According to some embodiments of the application, the air outlet has an air outlet end, a central axis of the air outlet end and a radial direction of the cooling jacket form a non-zero included angle, so that an air outlet direction of the air outlet is opposite to a rotation direction of the crystal in a circumferential direction of the cooling jacket.
According to some embodiments of the present application, the temperatures of the plurality of preset areas gradually decrease from bottom to top, and the number of the air outlets of the plurality of cooling sections gradually increases from bottom to top; and/or the outlet air flow of the cooling sections gradually increases from bottom to top.
According to some embodiments of the application, the plurality of preset regions includes a first preset region and a second preset region, the plurality of cooling segments includes a first cooling segment and a second cooling segment, the first cooling segment corresponds to the first preset region, the first preset region corresponds to a first preset temperature interval, the second cooling segment corresponds to the second preset region, the second preset region corresponds to a second preset temperature interval, and a temperature of the first preset temperature interval is less than a temperature of the second preset temperature interval.
According to some embodiments of the application, the first preset temperature interval is 700 ℃ to 900 ℃ and the second preset temperature interval is 950 ℃ to 1100 ℃.
According to another aspect of the present application, a crystal growth apparatus includes a furnace body and the cooling device described above, the cooling device being provided in the furnace body and configured to cool the crystal.
According to some embodiments of the application, the cooling device is movable relative to the furnace body in an axial direction of the furnace body.
The application also provides a control method of the crystal growth equipment, which comprises the following steps: and in the equal-diameter growth stage of the crystal, adjusting the airflow flow of the air outlet corresponding to the cooling section according to the current length of the crystal.
According to some embodiments of the application, when the current length of the crystal is within the first length range, the airflow rate of the air outlet is 0; when the current length of the crystal is in the second length range, the airflow flow rate of the air outlet is 20-50 slpm; when the current length of the crystal is in the third length range, the airflow rate of the air outlet is not more than 30slpm.
Drawings
FIG. 1 is a schematic view showing a partial structure of a crystal growing apparatus according to an embodiment of the present application;
FIG. 2 is a cross-sectional view of a cooling fluid passage and an air flow passage of a cooling device according to one embodiment of the present application;
FIG. 3 is a schematic view of the structure of a wind dispersing member of a cooling device according to one embodiment of the present application;
FIG. 4 is a schematic diagram of a cooling device and crystal according to one embodiment of the application;
FIG. 5 is a schematic diagram of temperature variation and defect growth of a crystal according to one embodiment of the application;
FIG. 6 is a flow chart of a method of controlling a crystal growing apparatus according to one embodiment of the present application;
fig. 7 is a flowchart of a control method of a crystal growth apparatus according to another embodiment of the present application.
Reference numerals:
crystal growing apparatus 100, cooling device 10, cooling jacket 1, cooling section 11, first cooling section 111, second cooling section 112, air flow passage 12, cooling liquid passage 13, air outlet 14, air dispersing member 2, air dispersing hole 21, furnace body 20, solid-liquid interface 30, main chamber 2011, auxiliary chamber 2021, crystal 200.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present application and should not be construed as limiting the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may communicate with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
Next, a cooling device 10 according to an embodiment of the present application is described with reference to the drawings.
The present inventors studied the growth and cooling process of crystals (e.g., the process of gradually raising the crystals into the sub-chamber to cool them), and found that the cooling state of crystals was as shown in FIG. 5, and that the crystals generated point defects at the solid-liquid interface to maintain the equilibrium concentration and the temperature of crystals was lowered to T without providing the cooling device 10 n ～T m When the temperature is within the range, the point defects undergo reactions such as diffusion, recombination and the like, and the crystal temperature is reduced to T c ～T n When the temperature is within the range, supersaturated point defects start to precipitate to form micro defects, such as COP, FPD, LSTD, and the micro defects continue to grow, and the crystal temperature is lowered to 700 to T c When the amount is within the range, the residual point defect promotes the formation of oxygen precipitates.
Based on this, the application provides a cooling device 10, the cooling device 10 has simple structure, convenient installation and good cooling effect on the crystal 200, and can enable the crystal 200 to quickly pass through a temperature interval where defects are formed in the growth process, reduce the defect size and defect density of the crystal generated in the crystal growth equipment 100 and improve the production quality of the crystal.
As shown in fig. 1, the cooling device 10 is used for the crystal growing apparatus 100 for cooling the crystal 200, and the crystal 200 has a plurality of preset regions each corresponding to a preset temperature interval, that is, the cooling device 10 can cool the crystal 200 to gradually decrease the temperature of the crystal 200 during the growth of the crystal 200, while the crystal 200 grows in the axial direction of the crystal growing apparatus 100, and the temperatures of the respective portions of the crystal 200 in the axial direction thereof are different.
The cooling device 10 according to the embodiment of the present application may include a cooling jacket 1, where the cooling jacket 1 is adapted to be sleeved outside the crystal 200, and an inner peripheral wall of the cooling jacket 1 is spaced from an outer peripheral wall of the crystal 200, so as to avoid that the arrangement of the cooling jacket 1 affects the movement of the crystal 200, and avoid that the crystal 200 contacts with the cooling device 10 during the growth process, affects the growth of the crystal 200, and even damages the cooling device 10.
The cooling jacket 1 includes a plurality of cooling segments 11 sequentially disposed along an axial direction of the cooling jacket 1, each cooling segment 11 is configured to cool a corresponding preset region, that is, a plurality of preset regions of the crystal 200 are sequentially disposed along the axial direction of the crystal 200, each cooling segment 11 corresponds to one preset region, for example, each cooling segment 11 corresponds to a height position of the corresponding preset region, so that a certain temperature gradient is obtained near the corresponding preset region to quickly cool from a preset temperature interval, so that a time of the preset region in the corresponding preset temperature interval is as short as possible, that is, a time of the preset region in the preset temperature interval is reduced, so that the crystal 200 can quickly pass through the preset temperature interval in which defects are liable to occur, thereby greatly reducing aggregation and growth time of defects of the crystal 200, so as to inhibit formation and growth of defect nuclei in the crystal 200, and the produced crystal 200 has smaller defect size, smaller defect density, and higher quality of the crystal 200, and effectively improving a proportion of the crystal 200, that is, that the defect occupies a whole crystal 200.
Wherein, each cooling section 11 defines an air outlet channel 12 and a cooling liquid channel 13, the air flow channel 12 has an air outlet 14, the air outlet 14 is suitable for blowing cooling gas towards the crystal 200, the cooling liquid channel 13 has cooling liquid, and the cooling liquid is used for adjusting the temperature of the cooling gas in the air flow channel 12, so that the temperature of the cooling gas blown out by the cooling device 10 has flexible controllability, and the cooling effect achieved by the cooling device 10 has wider adjustment flexibility, so as to better adapt to the differentiated requirements of different crystal growth devices 100 or different preset areas on the cooling effect, thereby effectively improving the applicability and practicality of the cooling device 10. Alternatively, the cooling gas may be selected from one or a mixture of several of nitrogen, inert gas, etc., so that the usage amount of the shielding gas of the crystal growth apparatus 100 may be appropriately reduced to some extent, and the usage requirement for the shielding gas may be reduced.
It will be appreciated that the air flow channels 12 of the plurality of cooling segments 11 of the cooling device 10 are each independently provided, and the cooling liquid channels 13 of the plurality of cooling segments 11 of the cooling device 10 are each independently provided, so as to control the temperature of the air in each cooling segment 11 and the temperature of the cooling liquid, to better control the temperature drop rate of the crystal 200. Alternatively, the air flow passages 12 of the plurality of cooling sections 11 of the cooling device 10 may be communicated with each other, and the cooling liquid passages 13 of the plurality of cooling sections 11 of the cooling device 10 may be communicated with each other, thereby making the structure of the cooling device 10 simple, the installation convenient, and further making the overall structure of the crystal growing apparatus 100 simpler and the manufacturing cost cheaper.
According to the cooling device 10 of the embodiment of the application, the cooling device 10 has a simple structure and low manufacturing cost, and the produced crystal 200 has smaller defect size and defect density, so that the quality of the crystal 200 is improved, and the proportion of perfect crystals is improved.
It can be appreciated that, when the crystal 200 is grown, the cooling gas blown by the cooling device 100 directly blows across the surface of the crystal 200, so as to rapidly cool the crystal 200, thereby reducing the additional cooling time required for the crystal 200 after the growth is completed; after the crystal 200 is separated from the solid-liquid interface 30, the crystal 200 gradually rises to completely enter the auxiliary chamber, and the tail of the crystal 200 is rapidly cooled by the cooling device 10, so that the overall cooling time of the crystal 200 is reduced.
In some embodiments, the airflow channel 12 extends spirally along the axial direction of the cooling jacket 1, and the airflow channel 12 extending spirally can be arranged around the crystal 200, so that the position of the air outlet 14 can be flexibly arranged, which is beneficial to enabling all parts of the peripheral wall of the crystal 200 to be cooled by the cooling device 10, improving the temperature control effect and improving the quality of the crystal 200.
Wherein, as shown in fig. 1, the cooling section 11 has a plurality of air outlets 14, and the plurality of air outlets 14 are arranged at intervals along the axial direction and/or the circumferential direction of the cooling jacket 1, and the cooling gas is suitable for being blown to the periphery of the crystal 200 through the plurality of air outlets 14 which are arranged at intervals, so that the blowing range of the cooling gas of the cooling section 11 is ensured, and the cooling gas can be blown to the periphery of the crystal 200 more uniformly.
In some embodiments of the present application, the opening area of the at least one air outlet 14 gradually decreases in the direction of the air flow; and/or, at least one air outlet 14 is provided with a regulating valve for regulating the air flow rate at the corresponding air outlet 14; and/or, at least one air outlet 14 is provided with a wind dispersing member 2, and the wind dispersing member 2 is formed with a plurality of wind dispersing holes 21.
In the description of the present application, "and/or" means that a plurality of parallel schemes are included, and "a and/or B" is taken as an example, and includes a scheme a, a scheme B, and a scheme B that are satisfied simultaneously; "A, and/or, B, and/or, C" includes A scheme, B scheme, C scheme, a scheme where A and B are satisfied simultaneously, a scheme where A and C are satisfied simultaneously, a scheme where B and C are satisfied simultaneously, A, B and C are satisfied simultaneously.
In some embodiments, the opening area of the at least one gas outlet 14 is gradually reduced in the direction of the gas flow to appropriately elevate the outlet flow rate of the cooling gas at the gas outlet 14, enabling the cooling gas to be blown around the crystal 200 to effectively cool the crystal 200.
Alternatively, the opening area of each air outlet 14 gradually decreases in the air flow direction. Of course, in other embodiments, the opening area of one portion of the plurality of air outlets 14 gradually decreases in the air flow direction, and the opening area of another portion may remain unchanged.
In some embodiments, at least one air outlet 14 is provided with a regulating valve for regulating the flow of air at the corresponding air outlet 14, so as to realize the regulation of the cooling effect of the cooling device 10 on the crystal 200; for example, by increasing the airflow rate at the air outlet 14, the cooling gas can achieve a better cooling effect on the crystal 200, so as to quickly reduce the temperature of the crystal 200 and increase the cooling rate of the crystal 200, and conversely, by decreasing the airflow rate at the air outlet 14, the cooling effect of the cooling gas on the crystal 200 can be reduced, and the cooling rate of the crystal 200 can be slowed down.
It can be seen that the number of air outlets 14 provided with a regulating valve is less than or equal to the total number of air outlets 14.
Therefore, by controlling the air outlets 14 to be provided with the regulating valve, the flow rate of the cooling air at each air outlet 14 on the cooling device 10 can be controlled, and by controlling the flow rate of the cooling air at each air outlet 14, each air outlet 14 at different positions can cooperate, so that the time of the crystal 200 in the preset temperature interval is as short as possible, and the crystal 200 can more quickly pass through the temperature interval which is easy to generate defects.
In some embodiments, referring to fig. 3, at least one air outlet 14 is provided with an air dispersing member 2, and the air dispersing member 2 is formed with a plurality of air dispersing holes 21. The air outlet range of the cooling air flowing out through the air dispersing piece 2 is larger, the air outlet of the cooling device 10 is soft, the impact force of the cooling air on the crystal 200 is smaller, and the phenomenon that the cooling air is concentrated at the air outlet 14 can be avoided.
In some embodiments, as shown in fig. 2, the airflow channel 12 surrounds the outer side of the cooling liquid channel 13, so as to ensure that the airflow channel 12 and the cooling liquid channel 13 have a larger heat exchange area, ensure that the cooling liquid in the cooling liquid channel 13 cools the cooling gas in the airflow channel 12, and facilitate improving the temperature control effect of the cooling device 10.
For example, referring to fig. 2, the cooling jacket 1 includes an inner tube and an outer tube coaxially disposed with the inner tube, and the outer tube is sleeved outside the inner tube, the inner tube defines a cooling liquid passage 13, and an inner wall of the outer tube and an outer wall of the inner tube define an air flow passage 12, so that the overall structure of the cooling device 10 is more compact, and the overall structure of the cooling device 10 is more reasonable. Of course, the outer cylinder and the inner cylinder of the cooling jacket 1 can also be eccentrically arranged, so that the relative arrangement of the outer cylinder and the inner cylinder is more flexible.
In some embodiments, the cooling fluid channel 13 extends helically in the axial direction of the cooling jacket 1, whereby the helically extending cooling fluid channel 13 and the helically extending air flow channel 12 can have the same extension path, so that the air flow channel 12 is arranged around the entire cooling fluid channel 13.
Further, as shown in fig. 3, the air outlet 14 has an air outlet end, and a non-zero included angle is formed between the central axis of the air outlet end and the radial direction of the cooling jacket 1, that is, α is equal to 0 °, so that the air outlet direction of the air outlet 14 is opposite to the rotation direction of the crystal 200 in the circumferential direction of the cooling jacket 1, so that the cooling air and the peripheral wall of the crystal 200 are arranged in a substantially counter-current manner, which is beneficial to improving the heat exchange efficiency of the cooling air and the crystal 200, ensuring the cooling effect of the cooling air on the crystal 200, avoiding enrichment of the cooling air on a certain portion of the crystal 200, improving the cooling effect, and further improving the temperature control effect of the cooling device 10.
Alternatively, in the example of FIG. 3, α may satisfy 30.ltoreq.α.ltoreq.70.
In some embodiments, referring to fig. 1, since the crystal 200 is generated from the solid-liquid interface 30 below and gradually cooled during the upward pulling, the further the distance from the solid-liquid interface 30 in the up-down direction, the lower the temperature of the crystal 200, and thus the temperature of the plurality of preset regions gradually decreases from bottom to top.
The number of the air outlets 14 of the plurality of cooling segments 11 gradually increases from bottom to top, so that for any two cooling segments 11, the number of the air outlets 14 of the lower cooling segment 11 is smaller than the number of the air outlets 14 of the upper cooling segment 11, and under the same air outlet condition, the cooling effect of the upper cooling segment 11 is better than that of the lower cooling segment 11, which is beneficial to accelerating the cooling speed of the generated crystal 200 portion, and further reducing the overall cooling time of the crystal 200.
Or, the air outlet flow of the plurality of cooling sections 11 gradually increases from bottom to top, so that for any two cooling sections 11, the air outlet flow of the lower cooling section 11 is smaller than the air outlet flow of the upper cooling section 11, and under the same air outlet condition, the cooling effect of the upper cooling section 11 is better than that of the lower cooling section 11, which is beneficial to accelerating the cooling speed of the generated crystal 200 part and further reducing the overall cooling time of the crystal 200.
It can be understood that the air outlet flow rate of the cooling section 11 can be regulated and controlled by reasonably setting the number, the opening area, the air outlet flow rate and the like of the air outlets 14 of the cooling section 11.
Or, the number of the air outlets 14 of the cooling sections 11 is gradually increased from bottom to top, and the air outlet flow of the cooling sections 11 is gradually increased from bottom to top, which is also beneficial to accelerating the cooling speed of the generated crystal 200 part, thereby reducing the overall cooling time of the crystal 200.
In some embodiments, as shown in fig. 1, the plurality of preset regions includes a first preset region and a second preset region, the plurality of cooling segments 11 includes a first cooling segment 111 and a second cooling segment 112, the first cooling segment 111 corresponds to the first preset region, the first preset region corresponds to a first preset temperature interval, the second cooling segment 112 corresponds to the second preset region, the second preset region corresponds to a second preset temperature interval, and the temperature of the first preset temperature interval is less than the temperature of the second preset temperature interval.
The first cooling section 111 is configured to cool the first preset area, so that the temperature of the first preset area is rapidly reduced to reduce the time when the temperature of the first preset area is within the first preset temperature range, and the second cooling section 112 is configured to cool the second preset area, so that the temperature of the second preset area is rapidly reduced to reduce the time when the temperature of the second preset area is within the second preset temperature range.
It can be appreciated that, in the process of decreasing the temperature of the second preset area from the second preset temperature interval, the temperature may decrease to the first preset temperature interval, and since the crystal 200 is at the same time in the growth stage, the position of the second preset area may correspond to the first cooling section 111, that is, the second preset area is formed as a "first preset area", and the first cooling section 111 may enable the temperature of the second preset area to quickly pass through the first preset temperature interval.
Of course, the number of the preset areas may be three or more, and the cooling sections 11 may be three or more.
Optionally, the number of air outlets 14 of the first cooling section 111 is greater than the number of air outlets 14 of the second cooling section 112, which is advantageous for reducing the overall cooling time of the crystal 200.
Optionally, the outlet flow rate of the first cooling section 111 is greater than the outlet flow rate of the second cooling section 112, which is advantageous for reducing the overall cooling time of the crystal 200
Still further, by the synergistic action of the first cooling section 111 and the second cooling section 112, the aggregation and growth time of the defects of the crystal 200 can be eliminated, thereby suppressing the formation of defective nuclei of the crystal 200. And under the synergistic effect of the first cooling section 111 and the second cooling section 112, the time of the crystal 200 passing through the preset temperature interval of defect generation can be ensured to be as shortest as possible, thereby further reducing the defect size and reducing the defect density of the crystal 200.
The inventor finds that in the temperature interval of 950-1100 ℃, the crystal 200 is easy to form point defect precipitation, and in the temperature interval of 700-900 ℃, the point defect of the crystal 200 is fast grown, therefore, the application sets the first preset temperature interval to 700-900 ℃ and the second preset temperature interval to 950-1100 ℃, so that the temperature of the second preset area of the crystal 200 is fast reduced from 950-1100 ℃, the time of the point defect precipitation of the crystal 200 is reduced, the density of the point defect is reduced, and meanwhile, the temperature of the first preset area of the crystal 200 is fast reduced from 700-900 ℃, the time of the point defect growth of the crystal 200 is reduced, and the growth of the point defect is restrained.
It will be appreciated that in the process of decreasing the temperature of the second preset area from 950 ℃ to 1100 ℃, the temperature will be reduced to 700 ℃ to 900 ℃, and the crystal 200 is in the growth stage at the same time, so that the position of the second preset area will correspond to the first cooling section 111, that is, the second preset area is formed as a "first preset area", and the first cooling section 111 can make the temperature of the second preset area quickly pass through the temperature range of 700 ℃ to 900 ℃.
That is, the first cooling section 111 is adapted to cool a portion of the crystal 200 having a temperature of 700 to 900 ℃, and the second cooling section 112 is adapted to cool a portion of the crystal 200 having a temperature of 950 to 1100 ℃, so that the crystal 200 can rapidly pass through a temperature interval formed by two defects of 950 to 1100 ℃ and 700 to 900 ℃ during the growth process due to the introduction of the cooling gas, thereby reducing the defect size and defect density of the crystal 200 generated in the crystal growth apparatus 100 and improving the production quality of the crystal 200.
Alternatively, in the example of fig. 1, the first cooling section 111 is adapted to be disposed within the main chamber 2011 of the crystal growing apparatus 100, and the second cooling section 112 is adapted to be disposed within the sub-chamber 2021 of the crystal growing apparatus 100.
The crystal growing apparatus 100 according to the second aspect of the embodiment of the present application includes the furnace body 20 and the cooling device 10 described above, the cooling device 10 being provided in the furnace body 20 and configured to cool the crystal 200.
According to the crystal growth apparatus 100 of the embodiment of the present application, by employing the cooling device 10 described above, the proportion of perfect crystals can be increased.
Further, the cooling device 10 can move along the axial direction of the furnace body 20 relative to the furnace body 20, so as to adjust the position of the cooling device 10 relative to the furnace body 20 in the axial direction of the furnace body 20, so that the cooling device 10 can move to the position of the cooling section 11 corresponding to the corresponding preset area, and meanwhile, the cooling device 10 can adapt to the position differentiation requirements of different preset areas.
The present application also proposes a control method of the crystal growth apparatus 100, as shown in fig. 4, the control method of the crystal growth apparatus 100 comprising the steps of: in the equal diameter growth stage of the crystal, the air flow rate of the air outlet 14 of the cooling section 11 is regulated according to the current length of the crystal.
S1, enabling crystals to enter an equal-diameter growth stage;
specifically, the crystal 200 is generated at the solid-liquid interface 30, and moves upward along with the pulling, and during the upward movement of the crystal 200, the crystal 200 enters into an equal diameter growth stage, and at this time, the generated crystal 200 can form a crystal rod with uniform thickness.
S2, adjusting the airflow flow of the air outlet of the cooling section according to the current length of the crystal.
By controlling the air flow of the air outlet 14, the cooling effect of the cooling section 11 can be precisely controlled to obtain a desired temperature gradient, thereby rapidly reducing the temperature of the crystal 200, enabling the crystal 200 to rapidly pass through a temperature interval where defects are formed, greatly reducing the aggregation and growth time of the defects of the crystal 200, inhibiting the formation and growth of defect cores in the crystal 200, further reducing the defect size, and reducing the defect density of the crystal 200.
In some alternative embodiments, as shown in fig. 5, step S2 includes:
s21, when the current length of the crystal is within the first length range, the current length of the crystal is smaller, for example, the crystal does not extend into the cooling jacket 1, the overall temperature of the crystal 200 is higher, the temperature of the crystal 200 is not cooled to the preset temperature range, and the air flow rate of the air outlets 14 is controlled to be 0, i.e. the air flow rates of all the air outlets 14 are all 0, so as to save the production cost.
Alternatively, when the current length of the crystal 200 is within the first length range, the current length of the crystal 200 is 15% or less of the total length of the produced crystal 200, so that the crystal 200 within the first length range is matched with the arrangement position of the cooling device 10. For example, the first length may range from 0 to 200mm.
S22, when the current length of the crystal is within the second length range, at this time, a part of the crystal extends into the cooling jacket 1, and the temperature of the corresponding part of the crystal 200 is reduced to be within the preset temperature range, the airflow flow of the air outlets 14 is controlled to be 20 slpm-50 slpm, that is, the airflow flows of all the air outlets 14 are within the above range, the cooling device 10 can rapidly cool the crystal 200, so that the crystal 200 can rapidly pass through the temperature range where defects are formed, the defect size and defect density of the crystal 200 generated in the crystal growth apparatus 100 are reduced, and the production quality of the crystal 200 is improved.
Wherein "slpm" (standard Liters per minute) refers to standard liters per minute.
Alternatively, when the current length of the crystal 200 is within the second length range, the current length of the crystal 200 is 15% to 60% of the total length of the produced crystal 200, so that the crystal 200 within the second length range is matched with the arrangement position of the cooling device 10. For example, the second length may range from 200mm to 1000mm, for example.
Alternatively, the air outlet flow rate of the plurality of cooling segments 11 is gradually increased from bottom to top, and the temperature of the crystal 200 is gradually decreased from bottom to top, so as to match the cooling effect of the cooling segments 11 with the cooling effect required for the corresponding preset region.
Optionally, in the example of fig. 1, the central axis of the cooling device 10 is parallel to the central axis of the furnace body, for the plurality of air outlets 14 of the cooling device 10, the flow rate of the air outlets 14 at the same height is the same, the flow rate of the air outlets 14 farther from the solid-liquid interface 30 is greater than the flow rate of the air outlets 14 closer to the solid-liquid interface 30, that is, for the upper air outlet 14 and the lower air outlet 14, the flow rate of the air outlets 14 is greater than the flow rate of the air outlets 14 below, and the temperature of the crystal 200 is gradually reduced from bottom to top, so as to further match the cooling effect of the cooling section 11 with the cooling effect required by the corresponding portion of the crystal 200.
S23, when the current length of the crystal is in the third length range, the length of the crystal is longer, and the tail end of the crystal is closer to the cooling device 10, the airflow flow of the air outlets 14 is controlled to be not more than 30slpm, that is, the airflow flow of all the air outlets 14 is in the above range, so that the cooling of the whole crystal is realized quickly.
Optionally, when the current length of the crystal 200 is within the third length range, the current length of the crystal 200 is 60% to 100% of the total length of the produced crystal 200, so that the crystal 200 within the second length range is matched with the arrangement position of the cooling device 10. For example, the third length may range from 1000mm to 1700mm, for example.
Thus, by controlling the flow rates at the gas outlets 14, the respective gas outlets 14 are allowed to cooperate to minimize the time of the temperature interval in which the crystal 200 passes through defect generation, thereby further reducing the defect size and defect density of the crystal 200.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.

Claims (11)

1. A cooling device (10), characterized in that the cooling device (10) is used for a crystal growing apparatus (100) and for cooling a crystal (200), the crystal (200) having a plurality of preset regions, each corresponding to a preset temperature interval, the plurality of preset regions comprising a first preset region and a second preset region, the cooling device (10) comprising: the cooling jacket (1), the cooling jacket (1) is suitable for being sleeved outside the crystal (200), the inner peripheral wall of the cooling jacket (1) is spaced from the outer peripheral wall of the crystal (200), the cooling jacket (1) comprises a plurality of cooling sections (11) which are sequentially arranged along the axial direction of the cooling jacket (1), each cooling section (11) is used for cooling corresponding to the preset area, an air outlet channel (12) and a cooling liquid channel (13) are defined in each cooling section (11), the air outlet channel (12) is provided with an air outlet (14), the air outlet (14) is suitable for blowing cooling gas towards the crystal (200), the cooling liquid channel (13) is internally provided with cooling liquid which is used for adjusting the temperature of the cooling gas in the air outlet channel (12),
the plurality of cooling sections (11) comprise a first cooling section (111) and a second cooling section (112), the first cooling section (111) corresponds to a first preset region, the first preset region corresponds to a first preset temperature interval, the second cooling section (112) corresponds to a second preset region, the second preset region corresponds to a second preset temperature interval, the temperature of the first preset temperature interval is smaller than that of the second preset temperature interval, the first preset temperature interval is 700-900 ℃, the second preset temperature interval is 950-1100 ℃,
the first cooling section (111) is used for cooling the first preset area in a first preset temperature interval and the second preset area in the first preset temperature interval so as to reduce the time that the temperature of the first preset area is in the first preset temperature interval and the time that the temperature of the second preset area is in the first preset temperature interval, and the second cooling section (112) is used for cooling the second preset area in the second preset temperature interval so as to reduce the time that the temperature of the second preset area is in the second preset temperature interval.
2. The cooling device (10) according to claim 1, wherein the air flow channel (12) extends helically in the axial direction of the cooling jacket (1), the air outlets (14) of the cooling segments (11) being plural and being arranged at intervals in the axial and/or circumferential direction of the cooling jacket (1).
3. The cooling device (10) according to claim 2, wherein an opening area of at least one of the air outlets (14) gradually decreases in an air flow direction; and/or the number of the groups of groups,
at least one air outlet (14) is provided with an adjusting valve for adjusting the air flow rate at the corresponding air outlet (14); and/or the number of the groups of groups,
at least one air outlet (14) is provided with an air dispersing piece (2), and a plurality of air dispersing holes (21) are formed in the air dispersing piece (2).
4. The cooling device (10) according to claim 1, characterized in that the air flow channel (12) surrounds the outside of the cooling liquid channel (13).
5. The cooling device (10) according to claim 4, characterized in that the cooling fluid channel (13) extends helically in the axial direction of the cooling jacket (1).
6. The cooling device (10) according to claim 1, wherein the air outlet (14) has an air outlet end, a central axis of which forms a non-zero angle with a radial direction of the cooling jacket (1), such that an air outlet direction of the air outlet (14) is opposite to a rotational direction of the crystal (200) in a circumferential direction of the cooling jacket (1).
7. The cooling device (10) according to claim 1, wherein the temperature of a plurality of said predetermined areas gradually decreases from bottom to top,
the number of the air outlets (14) of the plurality of cooling sections (11) gradually increases from bottom to top; and/or the number of the groups of groups,
the outlet air flow rate of the plurality of cooling sections (11) gradually increases from bottom to top.
8. Crystal growth apparatus (100) comprising a furnace body (20) and a cooling device (10) according to any one of claims 1-7, said cooling device (10) being arranged within said furnace body (20) and being adapted to cool said crystal.
9. The crystal growing apparatus (100) according to claim 8, wherein the cooling device (10) is movable relative to the furnace body (20) in an axial direction of the furnace body (20).
10. A control method of a crystal growth apparatus (100), characterized in that the crystal growth apparatus (100) is the crystal growth apparatus (100) according to claim 9, the control method comprising the steps of:
in the crystal constant diameter growth stage, the airflow flow rate of the air outlet (14) of the cooling section (11) is regulated according to the current length of the crystal.
11. The method of controlling a crystal growing apparatus (100) according to claim 10, characterized in that,
when the current length of the crystal is in a first length range, the airflow rate of the air outlet (14) is 0;
when the current length of the crystal is in the second length range, the airflow flow rate of the air outlet (14) is 20-50 slpm;
when the current length of the crystal is within a third length range, the airflow rate of the air outlet (14) is not more than 30slpm.
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CN113638043A (en) * 2021-08-16 2021-11-12 季华实验室 Purging and cooling system, method and device for epitaxial furnace, electronic equipment and storage medium

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