CN115074829B - Crystal pulling furnace - Google Patents
Crystal pulling furnace Download PDFInfo
- Publication number
- CN115074829B CN115074829B CN202210825183.5A CN202210825183A CN115074829B CN 115074829 B CN115074829 B CN 115074829B CN 202210825183 A CN202210825183 A CN 202210825183A CN 115074829 B CN115074829 B CN 115074829B
- Authority
- CN
- China
- Prior art keywords
- crystal pulling
- channel
- crucible
- crystal
- filtering device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 95
- 238000001914 filtration Methods 0.000 claims abstract description 31
- 239000011810 insulating material Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 23
- 239000011261 inert gas Substances 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 11
- 239000007787 solid Substances 0.000 abstract description 9
- 239000000155 melt Substances 0.000 abstract description 8
- 230000035939 shock Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000012774 insulation material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000035772 mutation Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention discloses a crystal pulling furnace, which comprises: the furnace body is provided with a cavity, and is provided with a crystal pulling port communicated with the cavity; the supporting seat is arranged in the cavity; the crucible is arranged on the supporting seat; the guide cylinder is arranged between the crucible and the crystal pulling port; the filtering device is arranged on the inner side wall of the guide cylinder, a crystal pulling channel is arranged at the position, corresponding to the crystal pulling opening, of the filtering device, and a plurality of airflow channels are arranged on the filtering device. The filtering device can prevent the generated silicon oxide gas from floating upwards, the inert gas flows downwards from the top, solid impurity particles can be filtered after passing through the filtering device, meanwhile, the air flow channel of the filtering device can change the turbulence of the inert gas, so that the passing air flow can orderly sweep the surface of a melt, the silicon oxide gas is taken away in time, the generation of thermal shock can be effectively prevented by the filtering device, and the turbulence of the inert gas is reduced.
Description
Technical Field
The invention belongs to the technical field of crystal pulling furnaces, and particularly relates to a crystal pulling furnace.
Background
Along with the continuous improvement of the quality of a semiconductor silicon wafer, the method has higher control requirements on the crystal defects of the crystal bar in the crystal pulling process, and the factors influencing the crystal defects mainly have two factors, namely the crystal pulling process parameters, and the crystal bar with better quality can be prepared by pulling with optimized process parameters; secondly, the structure and performance of the thermal field are the precondition of the quality of the crystal bar, the thermal field is a vital component part in the crystal pulling furnace, and the requirements on the quality and the material of the thermal field are extremely high due to the severe requirements on the crystal pulling environment of the crystal pulling furnace, so that the thermal field is high in temperature resistance, good in thermal stability and high in purity.
In the crystal pulling process, inert gas is filled into a crystal pulling furnace, firstly, the pressure in the furnace is kept constant, and a stable growth space is provided for crystals; and secondly, a large amount of SiO gas and impurities generated in the crystal growth process are taken away, so that the substances are prevented from being deposited on the surface of the thermal field component in a large amount, and the normal use of the thermal field component is prevented from being influenced. In the prior art, the broken line of the crystal is often caused by the mutation of a local temperature field or the turbulent flow of inert gas, the single crystal is converted into polycrystal for growth, and the re-dissolution or the breaking operation is generally required after the broken line occurs, so that the cost is increased, the overall yield of the crystal bar is reduced, and the normal and orderly operation of crystal pulling is influenced.
Disclosure of Invention
The embodiment of the invention aims to provide a crystal pulling furnace which is used for solving the problem that the mutation of a local temperature field influences the crystal pulling in the crystal pulling process.
The embodiment of the invention provides a crystal pulling furnace, which comprises the following components:
the furnace body is provided with a cavity, and the furnace body is provided with a crystal pulling port communicated with the cavity;
the supporting seat is arranged in the cavity;
the crucible is arranged on the supporting seat;
the guide cylinder is arranged between the crucible and the crystal pulling port;
the filter device is arranged on the inner side wall of the guide cylinder, a crystal pulling channel is arranged at the position, corresponding to the crystal pulling opening, of the filter device, and a plurality of airflow channels are arranged on the filter device.
The filtering device comprises an annular plate, and the periphery of the annular plate is connected with the inner side wall of the guide cylinder.
The filtering device comprises a cone, the airflow channel is arranged on the side wall of the cone, the crystal pulling channel penetrates through the cone along the axis direction of the cone, and the diameter of the cone, which is close to one end of the crystal pulling port, is smaller than that of the cone, which is far away from one end of the crystal pulling port.
The inner side wall of the guide cylinder is provided with a supporting table, and the bottom of the filtering device is arranged on the supporting table.
The orthographic projection of the filtering device on the first plane is positioned in the orthographic projection of the crucible on the first plane, and the first plane is perpendicular to the axis of the furnace body.
The orthographic projection of the guide cylinder on the first plane is positioned in the orthographic projection of the crucible on the first plane, and the first plane is perpendicular to the axis of the furnace body.
The inner side wall of the cavity is provided with a guide plate, the guide plate extends along the circumferential direction of the inner side wall of the cavity, the guide plate is arranged on the outer side of the guide cylinder, and the guide cylinder is connected with the guide plate.
Wherein at least one of the guide plate and the guide cylinder is a heat insulation material piece; and/or
And an insulating layer is arranged on the surface of at least one of the guide plate and the guide cylinder.
The gas flow channel comprises a first channel and a second channel communicated with the first channel, the first channel is far away from the crucible, the second channel is close to the crucible, and the diameter of the first channel is larger than that of the second channel.
The number of the airflow channels is multiple, and the airflow channels are uniformly distributed on the filtering device; and/or
The axis of the guide cylinder is collinear or parallel with the axis of the furnace body; and/or
The axis of the crystal pulling channel is collinear or parallel with the axis of the furnace body.
The crystal pulling furnace of the embodiment of the invention comprises: the furnace body is provided with a cavity, and the furnace body is provided with a crystal pulling port communicated with the cavity; the supporting seat is arranged in the cavity; the crucible is arranged on the supporting seat; the guide cylinder is arranged between the crucible and the crystal pulling port; the filter device is arranged on the inner side wall of the guide cylinder, a crystal pulling channel is arranged at the position, corresponding to the crystal pulling opening, of the filter device, and a plurality of airflow channels are arranged on the filter device.
In the crystal pulling furnace provided by the embodiment of the invention, the filtering device is arranged on the inner side wall of the guide cylinder, the position, corresponding to the crystal pulling opening, of the filtering device is provided with the crystal pulling channel, and the filtering device is provided with a plurality of airflow channels. The condensation of silicon oxide generated by the reaction of the silicon melt and the quartz crucible above the crystal pulling furnace and other particulate objects above the crystal pulling furnace or other impurities in inert gas flow can be filtered through the filtering device, so that colder substances are prevented from falling near the solid-liquid interface of crystal growth, thermal shock caused by the colder substances is prevented, and local temperature oscillation is avoided. In the crystal pulling process, the filter device can prevent generated silicon oxide gas from floating upwards, inert gas flows downwards from top to bottom, solid impurity particles can be filtered out after passing through the filter device, meanwhile, the air flow channel of the filter device can change the turbulence of the inert gas, so that the passing air flow can orderly pass through the surface of a melt and timely take away the silicon oxide gas, the generation of thermal shock can be effectively prevented through the filter device, the turbulence of the inert gas is reduced, the probability of breakage of a crystal bar is greatly reduced, and the overall yield of the crystal bar is improved.
Drawings
FIG. 1 is a schematic diagram of a crystal puller;
FIG. 2 is a schematic diagram of a distribution of air flow channels;
FIG. 3 is a partial schematic view of the filter device disposed on the support table;
fig. 4 is a schematic view of the filter device disposed on the support table.
Reference numerals
A furnace body 10; a chamber 11; a pull port 12;
a support base 20;
a crucible 30; a graphite crucible 31; a quartz crucible 32; a silicon melt 33;
a guide cylinder 40; a support table 41; a deflector 42;
a filter device 50;
a first channel 51; a second channel 52; an air flow passage 53;
and a boule 60.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the invention may be practiced otherwise than as specifically illustrated or described herein. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.
The crystal pulling furnace provided by the embodiment of the invention is described in detail below by means of specific embodiments and application scenes thereof with reference to fig. 1 to 4.
As shown in fig. 1 to 4, the crystal pulling furnace according to the embodiment of the present invention includes: the furnace body 10, the support base 20, the crucible 30, the guide cylinder 40 and the filtering device 50 are arranged, the furnace body 10 is provided with a cavity 11, the furnace body 10 is provided with a crystal pulling port 12 communicated with the cavity 11, and crystal pulling can be performed through the crystal pulling port 12. The supporting seat 20 is arranged in the chamber 11, the supporting seat 20 can comprise a supporting rod and a base, the lower end of the supporting rod is connected with the inner bottom wall of the chamber, the base can be arranged at the upper end of the supporting rod, and the axis of the supporting rod can be parallel or coincident with the axis of the furnace body. The crucible 30 is arranged on the supporting seat 20, the crucible 30 can be arranged on the base, the supporting rod can rotate, the crucible 30 can be driven to rotate through the rotation of the supporting rod, and the crucible 30 can be heated uniformly. The guide shell 40 may be disposed between the crucible 30 and the crystal pulling port 12, and the guide shell 40 may be used to block the flow of the gas to the silicon melt 33 of the crucible 30 to drive the oxide. The crucible 30 may include a graphite crucible 31 and a quartz crucible 32, the graphite crucible 31 may be disposed on the susceptor 20, and the quartz crucible 32 may be disposed within the graphite crucible 31.
The filter 50 may be disposed on an inner sidewall of the guide cylinder 40, the filter 50 may be disposed at a lower end of the guide cylinder 40, a pull channel may be disposed on the filter 50 corresponding to the pull port 12, and the pull channel may be circular, so that pulling of the crystal may be facilitated through the pull channel, and the crystal rod 60 may be facilitated. The filter device 50 may be provided with a plurality of air flow passages 53, and the plurality of air flow passages 53 may be disposed at intervals. The number of the filtering devices 50 may be one or more, for example, the number of the filtering devices 50 is plural, and the plurality of filtering devices 50 may be arranged at intervals along the axial direction of the guide cylinder 40, so as to enhance the filtering and guiding effects.
In the crystal pulling furnace according to the embodiment of the invention, the filtering device 50 is disposed on the inner sidewall of the guide shell 40, the position of the filtering device 50 corresponding to the crystal pulling port 12 is provided with crystal pulling channels, and the filtering device 50 is provided with a plurality of air flow channels 53. The condensation of silicon oxide generated by the reaction of the silicon melt and the quartz crucible above the crystal pulling furnace and other particulate objects above the crystal pulling furnace or other impurities in the inert gas flow can be filtered through the filtering device 50, so that colder substances are prevented from falling near the solid-liquid interface of crystal growth, thermal shock caused by the colder substances is prevented, and local temperature oscillation is avoided. In the crystal pulling process, the filter device 50 can prevent generated silicon oxide gas from floating upwards, inert gas flows downwards from top to bottom, solid impurity particles can be filtered out after passing through the filter device 50, meanwhile, the air flow channel 53 of the filter device 50 can change the turbulence of the inert gas, so that the passing air flow can orderly pass through the surface of a melt and timely take away the silicon oxide gas, the generation of thermal shock can be effectively prevented by the filter device 50, the turbulence of the inert gas is reduced, the probability of breakage of a crystal bar is greatly reduced, and the overall yield of the crystal bar is improved.
In some embodiments, as shown in FIG. 1, the filter device 50 may include an annular plate, the outer periphery of which is connected to the inner sidewall of the guide shell 40, and the axis of which may be parallel or coincident with the axis of the furnace body 10. The plurality of gas flow passages 53 may be provided at intervals on an annular plate with a circular hole in the middle of the annular plate as a pull passage. Solid impurity particles can be filtered after the silicon oxide gas passes through the annular plate, meanwhile, the air flow channel 53 of the annular plate can change the turbulence of inert gas, so that the passing air flow can orderly sweep the surface of the melt, silicon oxide gas can be timely taken away, the generation of thermal shock can be effectively prevented through the annular plate, and the turbulence of the inert gas is reduced.
In other embodiments, as shown in fig. 3 to 4, the filtering device 50 may include a cone, the air flow channel 53 is disposed on a sidewall of the cone, the crystal pulling channel penetrates along an axial direction of the cone, and a diameter of an end of the cone near the crystal pulling port 12 is smaller than a diameter of an end of the cone far from the crystal pulling port 12, so that solid impurity particles are filtered through the air flow channel 53, and the air flow channel 53 can change turbulence of inert gas. The side wall of the cone cylinder has a certain inclination angle, so that the direction of inert gas flow can be changed, the inert gas can be uniformly blown to the surface of the crystal bar, the cooling of the crystal bar is accelerated, and the crystal pulling rate is improved. After the particles are blocked, the particles may move down the outer sidewall of the cone, reducing obstruction to the airflow channel 53.
Alternatively, as shown in fig. 1 to 4, the inner sidewall of the guide cylinder 40 may be provided with a support table 41, the support table 41 may extend along the circumference of the inner sidewall of the guide cylinder 40, the bottom of the filter device 50 may be disposed on the support table 41, and the filter device 50 may be supported by the support table 41. A sealing structure may be provided between the bottom of the filtering device 50 and the upper surface of the support table 41 to reduce the gap and prevent solid impurities or air flow from passing through the gap. The bottom edge of the cone can be arranged on the supporting table 41, the outer side wall of the cone and the inner side wall of the guide cylinder 40 can be arranged at intervals, and the axis of the cone and the axis of the furnace body 10 can be parallel or coincident.
The region of the support table 41 between the inner side wall of the guide cylinder 40 and the outer side wall of the cone may be provided with grooves, through which the particles may move downwards along the outer side wall of the cone after being blocked, and through which the solid particles may be collected, reducing obstruction to the airflow channel 53.
Alternatively, the orthographic projection of the filter device 50 on the first plane may be located in the orthographic projection of the crucible 30 on the first plane, where the first plane is perpendicular to the axis of the furnace body 10, to prevent solid impurity particles from entering the melt in the crucible 30, so that the gas passing through the gas flow channel 53 may sweep the surface of the melt in order, and take away the silicon oxide gas in time, effectively preventing the occurrence of thermal shock.
Optionally, the orthographic projection of the guide cylinder 40 on the first plane is located in the orthographic projection of the crucible 30 on the first plane, and the first plane is perpendicular to the axis of the furnace body 10, so that the guided gas can orderly pass through the surface of the melt, and the silicon oxide gas is timely taken away.
In some embodiments, the inner sidewall of the chamber 11 may be provided with a baffle 42, the baffle 42 may extend along the circumference of the inner sidewall of the chamber 11, the baffle 42 may be disposed outside the guide cylinder 40, and the guide cylinder 40 may be connected with the baffle 42. After the gas passing through the gas flow channel 53 orderly passes over the surface of the melt, the gas with oxide can flow along the inner side wall of the furnace body 10 to the bottom of the furnace body 10 by the flow guide of the flow guide plate 42 so as to carry away the oxide, and reduce the damage or influence of the oxide on the crucible 30, the supporting seat 20 and other components.
In an embodiment of the present invention, at least one of the baffle 42 and the guide cylinder 40 may be a heat insulation material, for example, the baffle 42 or the guide cylinder 40 may be a heat insulation material, and both the baffle 42 and the guide cylinder 40 may be heat insulation materials, so as to improve heat insulation effect and reduce heat loss.
The surface of at least one of the baffle 42 and the guide cylinder 40 may be provided with an insulation layer, for example, the surface of the baffle 42 or the guide cylinder 40 may be provided with an insulation layer, and the surfaces of the baffle 42 and the guide cylinder 40 are provided with an insulation layer, so that the insulation effect can be improved and the heat loss can be reduced through the insulation layer.
Alternatively, as shown in fig. 2, the gas flow channel 53 may include a first channel 51 and a second channel 52 communicating with the first channel 51, the first channel 51 being disposed away from the crucible 30, the second channel 52 being disposed proximate to the crucible 30, the first channel 51 having a diameter greater than the diameter of the second channel 52, to facilitate filtering solid impurity particles through the gas flow channel 53 such that the gas flow channel 53 may alter the turbulence of the inert gas.
Alternatively, the number of the air flow channels 53 is plural, and the plurality of air flow channels 53 may be uniformly distributed on the filtering device 50, so that the air flow channels 53 may change turbulence of the inert gas, and the air flow distribution is uniform.
Optionally, the axis of the guide cylinder 40 is collinear or parallel to the axis of the furnace body 10, and the axis of the crystal pulling channel is collinear or parallel to the axis of the furnace body 10, so that the guide cylinder and the crystal pulling channel are positioned at the center of the furnace body 10, which is beneficial to uniform distribution of air flow and temperature of the furnace body 10.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (8)
1. A crystal puller, comprising:
the furnace body is provided with a cavity, and the furnace body is provided with a crystal pulling port communicated with the cavity;
the supporting seat is arranged in the cavity;
the crucible is arranged on the supporting seat;
the guide cylinder is arranged between the crucible and the crystal pulling port;
the filter device is arranged on the inner side wall of the guide cylinder, a crystal pulling channel is arranged at a position, corresponding to the crystal pulling opening, on the filter device, and a plurality of airflow channels are arranged on the filter device;
the filtering device comprises a cone, the airflow channel is arranged on the side wall of the cone, the crystal pulling channel penetrates through the cone along the axial direction of the cone, and the diameter of one end of the cone, which is close to the crystal pulling port, is smaller than the diameter of one end of the cone, which is far away from the crystal pulling port;
the gas flow channel comprises a first channel and a second channel communicated with the first channel, the first channel is far away from the crucible, the second channel is close to the crucible, and the diameter of the first channel is larger than that of the second channel.
2. The crystal puller of claim 1, wherein the filter means comprises an annular plate, the outer periphery of which is connected to the inner sidewall of the guide shell.
3. The crystal pulling furnace of claim 1, wherein the inner sidewall of the guide shell is provided with a support table, and the bottom of the filtering device is disposed on the support table.
4. The crystal puller of claim 1, wherein the orthographic projection of the filter on a first plane is located within the orthographic projection of the crucible on the first plane, the first plane being perpendicular to the axis of the furnace body.
5. The crystal puller of claim 1, wherein the orthographic projection of the guide sleeve on a first plane is located within the orthographic projection of the crucible on the first plane, the first plane being perpendicular to the axis of the furnace body.
6. The crystal pulling furnace of claim 1, wherein the inner side wall of the chamber is provided with a baffle extending along the circumference of the inner side wall of the chamber, the baffle being disposed outside of the guide shell, the guide shell being connected to the baffle.
7. The crystal puller of claim 6, wherein at least one of the baffle and the guide shell is a piece of insulating material; and/or
And an insulating layer is arranged on the surface of at least one of the guide plate and the guide cylinder.
8. The crystal puller of claim 1, wherein a plurality of the gas flow passages are evenly distributed over the filter means; and/or
The axis of the guide cylinder is collinear or parallel with the axis of the furnace body; and/or
The axis of the crystal pulling channel is collinear or parallel with the axis of the furnace body.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210825183.5A CN115074829B (en) | 2022-07-13 | 2022-07-13 | Crystal pulling furnace |
| TW111139988A TWI812518B (en) | 2022-07-13 | 2022-10-21 | Crystal puller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210825183.5A CN115074829B (en) | 2022-07-13 | 2022-07-13 | Crystal pulling furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115074829A CN115074829A (en) | 2022-09-20 |
| CN115074829B true CN115074829B (en) | 2024-01-26 |
Family
ID=83260032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210825183.5A Active CN115074829B (en) | 2022-07-13 | 2022-07-13 | Crystal pulling furnace |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115074829B (en) |
| TW (1) | TWI812518B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330362A (en) * | 1978-05-17 | 1982-05-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Device and process for pulling high-purity semiconductor rods from a melt |
| EP0191111A1 (en) * | 1984-12-28 | 1986-08-20 | International Business Machines Corporation | Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
| JPH05884A (en) * | 1991-06-18 | 1993-01-08 | Komatsu Electron Metals Co Ltd | Single crystal producing apparatus |
| EP0612867A1 (en) * | 1993-02-23 | 1994-08-31 | Shin-Etsu Handotai Company Limited | Inert gas rectifying/blowing apparatus for single crystal pulling device |
| RU2472875C1 (en) * | 2011-08-24 | 2013-01-20 | Общество с ограниченной ответственностью "Макси-М" | Method for growing silicon monocrystal from molten metal |
| WO2014197672A1 (en) * | 2013-06-05 | 2014-12-11 | Sunedison, Inc. | Insitu sneeze valve for clearing exhaust of a czochralski growth chamber |
| CN206783819U (en) * | 2017-05-10 | 2017-12-22 | 江西豪安能源科技有限公司 | A kind of direct-pulling single crystal furnace thermal field device |
| CN110983429A (en) * | 2019-12-23 | 2020-04-10 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and monocrystalline silicon preparation method |
| CN111850677A (en) * | 2020-07-31 | 2020-10-30 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN112481693A (en) * | 2020-12-01 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN215366058U (en) * | 2021-08-11 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Single crystal furnace |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
| KR101044124B1 (en) * | 2008-11-21 | 2011-06-28 | 주식회사 엘지실트론 | Cleaning method and cleaning module for manufacturing apparatus for crystal ingot |
| KR20110000174A (en) * | 2009-06-26 | 2011-01-03 | 네오세미테크 주식회사 | The ar gsa flow filtering machine |
| KR101528055B1 (en) * | 2013-11-25 | 2015-06-11 | 주식회사 엘지실트론 | Ingot growing apparatus |
| KR20150106204A (en) * | 2014-03-11 | 2015-09-21 | (주)기술과가치 | Apparatus for manufacturing ingot |
| CN111519241B (en) * | 2019-02-01 | 2021-12-17 | 上海新昇半导体科技有限公司 | Semiconductor crystal growth device |
| CN110983430A (en) * | 2019-12-23 | 2020-04-10 | 大同新成新材料股份有限公司 | Growth equipment convenient to regulate and control for monocrystalline silicon and growth method thereof |
| CN113755944A (en) * | 2020-06-05 | 2021-12-07 | 西安奕斯伟材料科技有限公司 | Single crystal furnace thermal field structure, single crystal furnace and crystal bar |
| CN113755941A (en) * | 2020-06-05 | 2021-12-07 | 隆基绿能科技股份有限公司 | Heat exchange device and single crystal furnace |
| CN113089079A (en) * | 2021-04-15 | 2021-07-09 | 曲靖阳光能源硅材料有限公司 | Heat shield guide cylinder of single crystal furnace |
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2022
- 2022-07-13 CN CN202210825183.5A patent/CN115074829B/en active Active
- 2022-10-21 TW TW111139988A patent/TWI812518B/en active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330362A (en) * | 1978-05-17 | 1982-05-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Device and process for pulling high-purity semiconductor rods from a melt |
| EP0191111A1 (en) * | 1984-12-28 | 1986-08-20 | International Business Machines Corporation | Improvements to pulling processes and equipment for growing silicon crystals having high and controlled carbon content |
| JPH05884A (en) * | 1991-06-18 | 1993-01-08 | Komatsu Electron Metals Co Ltd | Single crystal producing apparatus |
| EP0612867A1 (en) * | 1993-02-23 | 1994-08-31 | Shin-Etsu Handotai Company Limited | Inert gas rectifying/blowing apparatus for single crystal pulling device |
| RU2472875C1 (en) * | 2011-08-24 | 2013-01-20 | Общество с ограниченной ответственностью "Макси-М" | Method for growing silicon monocrystal from molten metal |
| WO2014197672A1 (en) * | 2013-06-05 | 2014-12-11 | Sunedison, Inc. | Insitu sneeze valve for clearing exhaust of a czochralski growth chamber |
| CN206783819U (en) * | 2017-05-10 | 2017-12-22 | 江西豪安能源科技有限公司 | A kind of direct-pulling single crystal furnace thermal field device |
| CN110983429A (en) * | 2019-12-23 | 2020-04-10 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and monocrystalline silicon preparation method |
| CN111850677A (en) * | 2020-07-31 | 2020-10-30 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN112481693A (en) * | 2020-12-01 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Crystal pulling furnace |
| CN215366058U (en) * | 2021-08-11 | 2021-12-31 | 西安奕斯伟材料科技有限公司 | Single crystal furnace |
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| Publication number | Publication date |
|---|---|
| TWI812518B (en) | 2023-08-11 |
| CN115074829A (en) | 2022-09-20 |
| TW202305207A (en) | 2023-02-01 |
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