CN213652724U - Thermal field structure of continuous crystal pulling single crystal furnace - Google Patents
Thermal field structure of continuous crystal pulling single crystal furnace Download PDFInfo
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- CN213652724U CN213652724U CN202022049427.4U CN202022049427U CN213652724U CN 213652724 U CN213652724 U CN 213652724U CN 202022049427 U CN202022049427 U CN 202022049427U CN 213652724 U CN213652724 U CN 213652724U
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Abstract
The utility model discloses a thermal field structure of a continuous crystal pulling single crystal furnace, which can ensure the heating thermal field atmosphere of the continuous crystal pulling of monocrystalline silicon and the inert gas protection atmosphere. The thermal field structure of the continuous crystal pulling single crystal furnace comprises a heat insulation layer and a crucible heating device, wherein a tray is arranged below the thermal field structure; a first heat-preserving heating resistor is arranged below the tray; a heating resistor is arranged around the crucible; the heating resistors are distributed outside the crucible and matched with the shape of the crucible; a guide cylinder is arranged above the crucible; the outer side of the lower end of the guide cylinder is provided with a back-off guide sleeve; a reflecting layer is arranged at the bottom of the furnace body; the lower end of the furnace body is provided with a heating electrode and a heat-preserving electrode; an inert gas inlet is formed in the stretching device above the furnace body; and an inert gas suction port is arranged at the bottom of the furnace body. The thermal field structure of the continuous crystal pulling single crystal furnace can ensure the continuous stretching of the silicon rod of the single crystal silicon, improve the production efficiency and ensure the product quality.
Description
Technical Field
The utility model relates to a thermal field structure for monocrystalline silicon crystal growth and stretching, in particular to a continuous crystal pulling monocrystalline furnace.
Background
It is well known that: according to different crystal growth modes, the current technology for preparing the monocrystalline silicon mainly comprises a suspension zone melting method and a Czochralski method, wherein the Czochralski method is relatively low in cost and high in growth rate, and is more suitable for drawing large-size monocrystalline silicon rods, and more than 90% of solar-grade monocrystalline silicon in China is produced by the Czochralski method at present.
CZ is a common method for growing crystals from a melt, belonging to a conservative system, which requires consistent eutectic melting of the crystals, and has the major advantage that it is an intuitive technique that allows large, dislocation-free single crystals to be grown in a short time.
The advantages are that:
1. the growth conditions are convenient to precisely control, and high-quality large single crystals can be obtained at a higher speed;
2. directional seed crystals can be used, and single crystals with different orientations can be obtained by selecting the seed crystals with different orientations;
3. the 'meltback' and 'necking' processes can be conveniently adopted to reduce the dislocation density in the crystal and improve the integrity of the crystal;
4. the growth condition can be directly observed in the crystal growth process, and favorable conditions are provided for controlling the crystal appearance;
the disadvantages are as follows:
1. the crucible is generally used as a container, so that the melt is polluted to different degrees; impurities of heat insulating materials and heating body materials also belong to the pollution;
2. when the melt contains volatile substances, there is a difficulty in controlling the components;
3. materials not suitable for solid phase change in the growth and cooling process;
4. segregation coefficients result in non-uniform solute distribution or non-uniform composition;
5. along with the growth process, the liquid level of the melt in the crucible is continuously lowered, and the inner wall of the crucible is gradually exposed. Because the temperature of the crucible wall is very high, the temperature field in the crystal and the melt is greatly influenced, and even interface inversion occurs.
In both the batch pulling method and the RCZ method, the amount of silicon melt in the crucible decreases as the single crystal silicon rod is pulled, causing a drop in the liquid level, causing instability of the thermodynamic environment in the pulling environment, and easily causing non-uniformity in the properties of the single crystal silicon rod being pulled. When one pulled crystal is cooled in the shutter, the next pulled silicon raw material is added to the remaining silicon melt in the crucible through the feed tube. The addition of the silicon charge is thus completed when the crystal cools. However, it is necessary to wait for the single-silicon ingot to be completely cooled and removed in the gate chamber before the next drawing is performed, which causes a low efficiency in industrial production of the RCZ method.
The existing single crystal furnace can not realize continuous crystal pulling of the monocrystalline silicon, so the prior art does not have a heating thermal field atmosphere suitable for monocrystalline silicon stretching.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem of providing a thermal field structure of a continuous crystal pulling single crystal furnace, which can ensure the heating thermal field atmosphere of continuous crystal pulling of monocrystalline silicon and the inert gas protection atmosphere.
The utility model provides a technical scheme that its technical problem adopted is: the thermal field structure of the continuous crystal pulling single crystal furnace comprises a crucible heating device below a crucible in a cavity in a furnace body and a heat insulation layer arranged on the inner wall of the furnace body;
a tray is arranged below the crucible heating device; a first heat-preserving heating resistor is arranged below the tray; a heating resistor is arranged around the crucible; the heating resistors are distributed outside the crucible and matched with the shape of the crucible;
a guide cylinder is arranged above the crucible; the outer side of the lower end of the guide cylinder is provided with a back-off guide sleeve; the crucible is a double-layer crucible; the guide cylinder is positioned above the inner layer crucible of the double-layer crucible; the inverted flow guide cover is positioned above an interlayer between an inner crucible and an outer crucible of the double-layer crucible;
a vertical second heat-preservation heating resistor is arranged between the heating resistor and the heat-preservation layer; a reflecting layer is arranged at the bottom of the furnace body; the lower end of the furnace body is provided with a heating electrode and a heat-preserving electrode;
the vertical second heat-preservation heating resistor and the heating resistor are electrically connected with the heating electrode; the heat preservation electrode is electrically connected with the first heat preservation heating resistor; an inert gas inlet is formed in the stretching device above the furnace body; and an inert gas suction port is arranged at the bottom of the furnace body.
Preferably, the first heat-preserving heating resistor is a heating resistor arranged transversely.
Preferably, the vertical second heat-preservation heating resistor is a graphite heating resistor.
Preferably, the crucible heating device adopts a graphite resistance heater.
The utility model has the advantages that: the thermal field structure of the continuous crystal pulling single crystal furnace of the utility model is characterized in that the guide cylinder above the crucible is provided with the inverted guide cover, so that inert gas can flow into the outer crucible after flowing into the inner crucible from the upper part of the guide cylinder and then flows into the lower part of the furnace body through the inner crucible, and then the inert gas is pumped away through the inert gas suction port, thereby forming better inert gas flow in the furnace body;
secondly, because the heating device is arranged at the bottom of the crucible and the heating resistors are arranged around the crucible, the heating of the crucible can be ensured; and the bottom of the furnace body is provided with a heat-preservation heating resistor and a second heat-preservation heating resistor is arranged between the heat-preservation layer and the heating resistor, so that the heat in the furnace can be prevented from being taken away by inert gas flow, the temperature of the heating furnace is reduced, and the stability of a thermal field in the furnace can be ensured.
Drawings
FIG. 1 is a schematic structural view of a thermal field structure of a continuous crystal pulling single crystal furnace according to an embodiment of the present invention;
the following are marked in the figure: 1-furnace body, 2-crucible, 3-heating resistor, 4-second heat preservation heating resistor, 5-heating electrode, 6-crucible heating device, 7-tray, 8-ejector rod, 9-first heat preservation heating resistor, 10-heat preservation electrode, 11-reflecting layer, 12-heat preservation layer, 13-inert gas suction port, 14-stretching device, 15-inert gas inlet, 16-guide cylinder and 17-inverted guide cover.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in figure 1, the thermal field structure of the continuous crystal pulling single crystal furnace of the utility model comprises a crucible heating device 6 arranged below a crucible 2 in an inner cavity of a furnace body 1 and a heat preservation layer 12 arranged on the inner wall of the furnace body 1;
a tray 7 is arranged below the crucible heating device 6; a first heat-preservation heating resistor 9 is arranged below the tray 7; a heating resistor 3 is arranged around the crucible 2; the heating resistors 3 are distributed outside the crucible 2 and matched with the shape of the crucible 2;
a guide cylinder 16 is arranged above the crucible 2; the outer side of the lower end of the guide shell 16 is provided with an inverted guide cover 17; the crucible 2 is a double-layer crucible; the guide cylinder 16 is positioned above the inner crucible of the double-layer crucible; the inverted dome 17 is positioned above an interlayer between an inner crucible and an outer crucible of the double-layer crucible;
a vertical second heat-preservation heating resistor 4 is arranged between the heating resistor 3 and the heat-preservation layer 12; the bottom of the furnace body 1 is provided with a reflecting layer 11; the lower end of the furnace body 1 is provided with a heating electrode 5 and a heat-preserving electrode 10;
the vertical second heat-preservation heating resistor 4 and the heating resistor 3 are electrically connected with the heating electrode 5; the heat preservation electrode 10 is electrically connected with the first heat preservation heating resistor 9; an inert gas inlet 15 is arranged on the stretching device 14 above the furnace body 1; an inert gas suction port 13 is arranged at the bottom of the furnace body 1.
In the application process, inert gas is firstly introduced from an inert gas inlet 15 and is extracted from an inert gas suction port 13 in the process of carrying out the czochralski of the monocrystalline silicon; at the same time, the heating of the crucible bottom is achieved by means of the crucible heating device 6 and the heating of the crucible surroundings is achieved by means of the heating resistor 3.
In the process of stretching, the reversing guide cover is arranged on the guide cylinder above the crucible, so that inert gas can flow into the outer crucible after flowing into the inner crucible from the upper part of the guide cylinder and then flows into the inert gas suction port below the furnace body through the inner crucible and is pumped away under the action of the guide of the reversing guide cover, and better inert gas flow is formed in the furnace body;
secondly, because the heating device is arranged at the bottom of the crucible and the heating resistors are arranged around the crucible, the heating of the crucible can be ensured; and the bottom of the furnace body is provided with a heat-preservation heating resistor and a second heat-preservation heating resistor is arranged between the heat-preservation layer and the heating resistor, so that the heat in the furnace can be prevented from being taken away by inert gas flow, the temperature of the heating furnace is reduced, and the stability of a thermal field in the furnace can be ensured.
In order to stabilize the heating thermal field of the silicon material in the furnace body 1, further, the first heat-preserving heating resistors 9 are transversely arranged heating resistors.
In order to realize heating, it is preferable that the vertical second heat-preservation heating resistor 4 is a graphite heating resistor. The crucible heating device 6 adopts a graphite resistance heater.
Claims (4)
1. The thermal field structure of the continuous crystal pulling single crystal furnace is characterized in that: comprises a crucible heating device (6) below a crucible (2) in the inner cavity of a furnace body (1) and a heat-insulating layer (12) arranged on the inner wall of the furnace body (1);
a tray (7) is arranged below the crucible heating device (6); a first heat-preservation heating resistor (9) is arranged below the tray (7); a heating resistor (3) is arranged around the crucible (2); the heating resistors (3) are distributed outside the crucible (2) and matched with the shape of the crucible (2);
a guide cylinder (16) is arranged above the crucible (2); an inverted diversion cover (17) is arranged on the outer side of the lower end of the diversion cylinder (16); the crucible (2) is a double-layer crucible; the guide cylinder (16) is positioned above the inner crucible of the double-layer crucible; the inverted-buckle air guide sleeve (17) is positioned above an interlayer between an inner crucible and an outer crucible of the double-layer crucible;
a vertical second heat-preservation heating resistor (4) is arranged between the heating resistor (3) and the heat-preservation layer (12); a reflecting layer (11) is arranged at the bottom of the furnace body (1); the lower end of the furnace body (1) is provided with a heating electrode (5) and a heat-insulating electrode (10);
the vertical second heat-preservation heating resistor (4) and the heating resistor (3) are electrically connected with the heating electrode (5); the heat preservation electrode (10) is electrically connected with the first heat preservation heating resistor (9); an inert gas inlet (15) is arranged on the stretching device (14) above the furnace body (1); an inert gas suction port (13) is formed in the bottom of the furnace body (1).
2. A thermal field structure of a continuous crystal pulling furnace as set forth in claim 1, wherein: the first heat-preservation heating resistor (9) is a heating resistor which is transversely arranged.
3. A thermal field structure of a continuous crystal pulling furnace as set forth in claim 2, wherein: and the vertical second heat-preservation heating resistor (4) adopts a graphite heating resistor.
4. A thermal field structure of a continuous crystal pulling furnace as set forth in claim 3, wherein: the crucible heating device (6) adopts a graphite resistance heater.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022049427.4U CN213652724U (en) | 2020-09-17 | 2020-09-17 | Thermal field structure of continuous crystal pulling single crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022049427.4U CN213652724U (en) | 2020-09-17 | 2020-09-17 | Thermal field structure of continuous crystal pulling single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115012034A (en) * | 2022-05-31 | 2022-09-06 | 隆基绿能科技股份有限公司 | Crystal pulling production equipment and crystal pulling method |
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- 2020-09-17 CN CN202022049427.4U patent/CN213652724U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115012034A (en) * | 2022-05-31 | 2022-09-06 | 隆基绿能科技股份有限公司 | Crystal pulling production equipment and crystal pulling method |
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