CN213652723U - Single crystal furnace for continuous Czochralski single crystal pulling - Google Patents
Single crystal furnace for continuous Czochralski single crystal pulling Download PDFInfo
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- CN213652723U CN213652723U CN202022051324.1U CN202022051324U CN213652723U CN 213652723 U CN213652723 U CN 213652723U CN 202022051324 U CN202022051324 U CN 202022051324U CN 213652723 U CN213652723 U CN 213652723U
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Abstract
The utility model discloses a continuous straight pulling of monocrystalline silicon can be realized, the crystal pulling quality can be improved, continuous feeding is guaranteed, and the continuous straight pulling monocrystalline single crystal furnace of the quality of monocrystalline silicon rod can be guaranteed. The single crystal furnace for continuously pulling the single crystal comprises a furnace body; a double-layer crucible is arranged in the inner cavity of the furnace body; the upper end of the furnace body is provided with a stretching device; a silicon material feeding device is arranged at the upper end of the furnace body; a graphite heating tray is arranged at the lower end of the double-layer crucible; a tray is arranged below the graphite heating tray; the lower end of the tray is provided with a towing rod; an insulating layer is arranged on the inner wall of the furnace body; a reflecting layer is arranged at the bottom of the inner cavity of the furnace body; a heating resistor is arranged between the double-layer crucible and the heat-insulating layer; a guide cylinder is arranged above the double-layer crucible; and a heating electrode is arranged at the lower end of the furnace body. The single crystal furnace for continuously pulling the single crystal can ensure the continuous pulling of the silicon single crystal rod and improve the production efficiency.
Description
Technical Field
The utility model relates to a single crystal furnace for the growth and stretching of monocrystalline silicon crystals, in particular to continuous Czochralski monocrystalline.
Background
It is well known that: according to different crystal growth modes, the current technology for preparing the monocrystalline silicon mainly comprises a suspension zone melting method and a Czochralski method, wherein the Czochralski method is relatively low in cost and high in growth rate, and is more suitable for drawing large-size monocrystalline silicon rods, and more than 90% of solar-grade monocrystalline silicon in China is produced by the Czochralski method at present.
CZ is a common method for growing crystals from a melt, belonging to a conservative system, which requires consistent eutectic melting of the crystals, and has the major advantage that it is an intuitive technique that allows large, dislocation-free single crystals to be grown in a short time.
The advantages are that:
1. the growth conditions are convenient to precisely control, and high-quality large single crystals can be obtained at a higher speed;
2. directional seed crystals can be used, and single crystals with different orientations can be obtained by selecting the seed crystals with different orientations;
3. the 'meltback' and 'necking' processes can be conveniently adopted to reduce the dislocation density in the crystal and improve the integrity of the crystal;
4. the growth condition can be directly observed in the crystal growth process, and favorable conditions are provided for controlling the crystal appearance;
the disadvantages are as follows:
1. the crucible is generally used as a container, so that the melt is polluted to different degrees; impurities of heat insulating materials and heating body materials also belong to the pollution;
2. when the melt contains volatile substances, there is a difficulty in controlling the components;
3. materials not suitable for solid phase change in the growth and cooling process;
4. segregation coefficients result in non-uniform solute distribution or non-uniform composition;
5. along with the growth process, the liquid level of the melt in the crucible is continuously lowered, and the inner wall of the crucible is gradually exposed. Because the temperature of the crucible wall is very high, the temperature field in the crystal and the melt is greatly influenced, and even interface inversion occurs.
In both the batch pulling method and the RCZ method, the amount of silicon melt in the crucible decreases as the single crystal silicon rod is pulled, causing a drop in the liquid level, causing instability of the thermodynamic environment in the pulling environment, and easily causing non-uniformity in the properties of the single crystal silicon rod being pulled. When one pulled crystal is cooled in the shutter, the next pulled silicon raw material is added to the remaining silicon melt in the crucible through the feed tube. The addition of the silicon charge is thus completed when the crystal cools. However, it is necessary to wait for the single-silicon ingot to be completely cooled and removed in the gate chamber before the next drawing is performed, which causes a low efficiency in industrial production of the RCZ method.
The existing single crystal furnace generally cannot realize continuous crystal pulling of monocrystalline silicon, a crucible of the existing single crystal furnace is generally a single-layer crucible, so that continuous stretching feeding of the monocrystalline is inconvenient, and the added granular silicon material directly enters the crucible, so that the quality of silicon liquid in the crucible can be influenced, and the stretching quality of the monocrystalline is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a continuous czochralski crystal furnace of monocrystalline silicon can be realized to provide one kind, can improve the crystal pulling quality, guarantees to feed in succession, improves production efficiency to can guarantee the quality of monocrystalline silicon rod.
The utility model provides a technical scheme that its technical problem adopted is: a single crystal furnace for continuously pulling a single crystal comprises a furnace body; a double-layer crucible is arranged in the inner cavity of the furnace body; the upper end of the furnace body is provided with a stretching device; an inert gas inlet is formed in the stretching device; a silicon material feeding device is arranged at the upper end of the furnace body;
a graphite heating tray is arranged at the lower end of the double-layer crucible; a tray is arranged below the graphite heating tray; the lower end of the tray is provided with a towing rod; the towing rod penetrates through the lower end of the furnace body;
an insulating layer is arranged on the inner wall of the furnace body; a reflecting layer is arranged at the bottom of the inner cavity of the furnace body; a heating resistor is arranged between the double-layer crucible and the heat-insulating layer; an inert gas suction port is formed in the lower end of the furnace body; a guide cylinder is arranged above the double-layer crucible;
the lower end of the furnace body is provided with a heating electrode; the heating electrode penetrates through the lower end of the furnace body and is connected with the heating resistor;
the double-layer crucible comprises an outer-layer crucible and an inner-layer crucible cylinder; the inner layer crucible cylinder is positioned in the outer layer crucible; a feeding interlayer is arranged between the outer side of the side wall of the inner layer crucible cylinder and the inner wall of the outer layer crucible;
the lower end of the outer crucible is provided with an annular conical surface; the lower end of the inner layer crucible cylinder is connected with the inner wall of the annular conical surface; a through hole is formed between the lower end of the inner layer crucible cylinder and the annular conical surface;
a heat insulation layer is arranged in the side wall of the inner crucible cylinder; mounting bosses are arranged at the middle position of the inner wall of the outer-layer crucible and on the outer wall of the inner-layer crucible cylinder; the mounting boss is provided with a bushing plate;
the silicon material feeding device comprises a material storage barrel; the lower end of the material storage cylinder is a conical end, and the conical end is connected with a vibrating cylinder; a discharge valve is arranged between the lower end of the conical end and the vibrating cylinder;
a vibrator is arranged on the vibration cylinder; a first layer of vibrating screen plate and a second layer of vibrating screen plate are arranged in the vibrating cylinder;
the first layer of vibrating screen plate is positioned above the second layer of vibrating screen plate; a first material leaking box and a second material leaking box are arranged on one side of the vibration cylinder;
the gap between the layer of vibrating screen plate and the top end of the vibrating cylinder is communicated with the upper end of the first material leakage box; the gap between the first layer of vibrating screen plate and the second layer of vibrating screen plate is communicated with the upper end of the second material leakage box;
a material guide pipe is arranged at the lower end of the vibration cylinder; a feeding pipe is arranged above the material storage barrel; a stirring device is arranged in the material storage cylinder;
the material guide pipe penetrates through the top of the furnace body, extends into the opening at the upper end of the outer crucible and is positioned above the feeding interlayer.
Further, a heat-preservation heating resistor is arranged below the tray; and the lower end of the furnace body is provided with a second electrode connected with the heat-preservation heating resistor.
Furthermore, a crossing air guide sleeve is arranged at the lower end of the air guide cylinder.
Furthermore, an opening at the upper end of the outer-layer crucible is a bell mouth.
Further, the pot bottom of the outer-layer crucible is flat.
Preferably, the materials of the outer layer crucible and the inner layer crucible cylinder are silicon carbide, silicon nitride or zirconium oxide.
Furthermore, the material guide pipe is communicated with the lower end of the vibration cylinder through a folding pipe.
Preferably, the vibrator is a bin wall vibrator.
Furthermore, the first layer of vibrating screen plate and the second layer of vibrating screen plate are both obliquely arranged, and the first layer of vibrating screen plate and the second layer of vibrating screen plate are both obliquely downward towards one side of the vibrating cylinder; the first material leaking box is located at one end, facing downwards, of the first vibrating sieve plate layer, and the second material leaking box is located at one end, facing downwards, of the second vibrating sieve plate layer.
Furthermore, the mesh aperture of the two layers of vibrating sieve plates is smaller than that of the first layer of vibrating sieve plates.
The utility model has the advantages that: the single crystal furnace for continuous czochralski crystal has the following advantages:
1. due to the double-layer crucible, when continuous feeding is carried out, the granular silicon material is added into the outer crucible, and the monocrystalline silicon is stretched in the inner crucible, so that the continuous stretching of the monocrystalline silicon can be realized; can effectively improve the production efficiency and ensure the product quality.
2. Because the vibrating cylinder is arranged below the material storage cylinder, the granular silicon material can be conveniently screened on the first vibrating screen plate and the second vibrating screen plate in the vibrating cylinder through the vibration of the vibrating cylinder, so that the added silicon material can be ensured to be a smaller granular silicon material; the silicon material can be molten in a short time when being added into the crucible, and the continuity of feeding is ensured; and the stretching quality of the crystal bar of the monocrystalline silicon can be ensured.
Meanwhile, a first material leakage box and a second material leakage box are arranged on one side of the vibration cylinder; thereby being convenient for collect the material of bigger granule, being convenient for the collection of granule silicon material to recycle.
Drawings
FIG. 1 is a schematic structural view of a single crystal furnace for continuously pulling a single crystal according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a double-layered crucible according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a silicon material feeding device in an embodiment of the present invention;
the following are marked in the figure: 1-furnace body, 2-double-layer crucible, 3-graphite heating tray, 4-tray, 5-tow rod, 6-draft tube, 7-inverted draft hood, 8-silicon material feeding device, 9-heat preservation layer, 10-heating resistor, 11-heating electrode, 12-reflection layer, 13-inert gas suction port, 14-heat preservation heating resistor, 15-second electrode, 16-stretching device and 17-inert gas inlet;
21-outer layer crucible, 22-inner layer crucible cylinder, 23-side wall, 24-heat insulation layer, 25-feeding interlayer, 26-through hole, 211-opening, 212-pot bottom, 213-annular conical surface, 214-mounting boss, 215-bushing plate;
81-material storage cylinder, 82-vibration cylinder, 83-vibrator, 84-folding pipe, 85-material guide pipe, 86-first layer vibration screen, 87-second layer vibration screen, 88-first material leaking box, 89-second material leaking box, 810-stirring device, 811-material feeding pipe and 812-conical end.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in figure 1, the single crystal furnace for continuous czochralski single crystal comprises a furnace body 1; a double-layer crucible 2 is arranged in the inner cavity of the furnace body 1; the upper end of the furnace body 1 is provided with a stretching device 16; the stretching device 16 is provided with an inert gas inlet 17; a silicon material feeding device 8 is arranged at the upper end of the furnace body 1;
the lower end of the double-layer crucible 2 is provided with a graphite heating tray 3; a tray 4 is arranged below the graphite heating tray 3; the lower end of the tray 4 is provided with a towing rod 5; the towing rod 5 penetrates through the lower end of the furnace body 1;
an insulating layer 9 is arranged on the inner wall of the furnace body 1; a reflecting layer 12 is arranged at the bottom of the inner cavity of the furnace body 1; a heating resistor 10 is arranged between the double-layer crucible 2 and the heat-insulating layer 9; an inert gas suction port 13 is formed in the lower end of the furnace body 1; a guide cylinder 6 is arranged above the double-layer crucible 2;
the lower end of the furnace body 1 is provided with a heating electrode 11; the heating electrode 11 penetrates through the lower end of the furnace body 1 and is connected with the heating resistor 10;
the double-layer crucible 2 comprises an outer-layer crucible 21 and an inner-layer crucible cylinder 22; the inner crucible cylinder 22 is positioned in the outer crucible 21; a feeding interlayer 25 is arranged between the outer side of the side wall 23 of the inner layer crucible cylinder 22 and the inner wall of the outer layer crucible 21;
the lower end of the outer crucible 21 is provided with an annular conical surface 213; the lower end of the inner crucible cylinder 22 is connected with the inner wall of the annular conical surface 213; a through hole 26 is arranged between the lower end of the inner layer crucible cylinder 22 and the annular conical surface 213;
a heat insulation layer 24 is arranged in the side wall 23 of the inner layer crucible cylinder 22; mounting bosses 214 are arranged at the middle position of the inner wall of the outer-layer crucible 21 and on the outer wall of the inner-layer crucible cylinder 22; the mounting boss 214 is provided with a bushing 215;
the silicon material feeding device 8 comprises a material storage cylinder 81; the lower end of the material storage cylinder 81 is a conical end 812, and the conical end 812 is connected with the vibration cylinder 82; a discharge valve is arranged between the lower end of the conical end 812 and the vibration cylinder 82;
the vibration cylinder 82 is provided with a vibrator 83; a first layer of vibrating screen plate 86 and a second layer of vibrating screen plate 87 are arranged in the vibrating cylinder 82;
the first layer of vibrating screen plate 86 is positioned above the second layer of vibrating screen plate 87; a first material leakage box 88 and a second material leakage box 89 are arranged on one side of the vibration cylinder 82;
the gap between the vibrating screen plate 86 and the top end of the vibrating cylinder 82 is communicated with the upper end of the first material leakage box 88; the gap between the first layer of vibrating screen plate 86 and the second layer of vibrating screen plate 87 is communicated with the upper end of the second material leakage box 89;
a material guide pipe 85 is arranged at the lower end of the vibration cylinder 82; a feeding pipe 811 is arranged above the material storage barrel 81; a stirring device 810 is arranged in the material storage cylinder 81;
the material guide pipe 85 penetrates through the top of the furnace body 1, extends into the opening 211 at the upper end of the outer crucible 21 and is positioned above the feeding interlayer 25.
In the application process, the initial silicon material is placed in the inner crucible cylinder 22 to be heated and melted until the required temperature is reached, inert gas is introduced through the inert gas inlet 17, and then the inert gas is sucked out through the inert gas suction port 13. And the single crystal is pulled by the pulling device 16. In the process of stretching monocrystalline silicon, adding granular silicon materials into a feeding interlayer 25 between an outer layer crucible 21 and an inner layer crucible cylinder 22 through a silicon material feeding device 8, melting the granular silicon materials in the feeding interlayer 25, flowing into the inner layer crucible cylinder 22 through a through hole 26 at the lower end of the inner layer crucible cylinder 22, and supplementing silicon liquid reduced due to the stretching of the monocrystalline silicon in the inner layer crucible cylinder 22; thereby realizing the continuous straight-pull forming of the single crystal silicon rod.
Because the middle position of the inner wall of the outer layer crucible 21 and the outer wall of the inner layer crucible cylinder 22 are both provided with the mounting bosses 214; the mounting boss 214 is provided with a bushing 215; thereby ensuring that the granular silicon material added in the feeding interlayer 25 enters the inner crucible cylinder 22 through the through hole 26 after being completely melted. And because the lower end of the outer crucible 21 has an annular tapered surface 213; it is possible to prevent residual silicon material from remaining in the feed nip 25 after the completion of the pulling of the single crystal silicon.
In the feeding process of the silicon material feeding device 8, granular silicon materials enter the material storage barrel 81 through the feeding pipe 811; the stirring is performed by the stirring device 810, so that the granular silicon material is always kept in a discrete state. Then, the discharge valve between the lower end of the conical end 812 and the vibration cylinder 82 is opened; and the vibrator 83 is started, the granular silicon material enters the vibrating cylinder 82, firstly passes through the layer of vibrating screen plate 86, is screened through the layer of vibrating screen plate 86, and the larger granular silicon material is vibrated to enter the first material leakage box 88. Then the granular silicon material passes through the second layer of vibrating sieve plate 87 and is further screened by the second layer of vibrating sieve plate 87, and the silicon material with larger granules enters the second material leakage box 89 to be collected. The finally screened granular silicon material enters the crucible through the material guide pipe 85.
In summary, the single crystal furnace for continuous czochralski single crystal is provided with the double-layer crucible, when continuous feeding is carried out, the granular silicon material is added into the outer-layer crucible, and the stretching of the monocrystalline silicon is realized in the inner-side crucible, so that the continuous stretching of the monocrystalline silicon can be realized; can effectively improve the production efficiency and ensure the product quality.
The single crystal furnace for continuously pulling the single crystal is provided with the vibrating cylinder below the storage cylinder, so that the granular silicon material can be conveniently screened on the first layer vibrating screen plate and the second layer vibrating screen plate in the vibrating cylinder through the vibration of the vibrating cylinder, thereby ensuring that the added silicon material is a silicon material with smaller granules; the silicon material can be molten in a short time when being added into the crucible, and the continuity of feeding is ensured; and the stretching quality of the crystal bar of the monocrystalline silicon can be ensured.
Meanwhile, a first material leakage box and a second material leakage box are arranged on one side of the vibration cylinder; thereby being convenient for collect the material of bigger granule, being convenient for the collection of granule silicon material to recycle.
In order to avoid the influence of the heat taken away by the inert gas on the thermal field of the single crystal furnace, a heat-preservation heating resistor 14 is further arranged below the tray 4; and a second electrode 15 connected with a heat-preservation heating resistor 14 is arranged at the lower end of the furnace body 1.
In order to facilitate the control of the flow direction of the inert gas in the single crystal furnace and form a better inert gas atmosphere, the lower end of the guide shell 6 is further provided with an inverted guide cover 7.
In order to ensure high temperature resistance and thermal conductivity, the bushing 215 is preferably made of graphite. In order to facilitate the addition of the granular silicon material, the opening at the upper end of the outer crucible 21 is a bell mouth. In order to facilitate heating, the bottom of the outer crucible 21 is a flat bottom. Specifically, the outer crucible 21 and the inner crucible cylinder 22 are made of silicon carbide, silicon nitride or zirconium oxide.
In order to adjust the feeding angle of the material guiding pipe 85, the material guiding pipe 85 is further communicated with the lower end of the vibration cylinder 82 through a folding pipe 84.
For the convenience of control and cost reduction, it is preferable that the vibrator 83 is a bin wall vibrator.
In order to facilitate the silicon material with larger particles to enter the first material leakage box 88 and the second material leakage box 89, the first layer of vibrating screen plate 86 and the second layer of vibrating screen plate 87 are both obliquely arranged, and the first layer of vibrating screen plate 86 and the second layer of vibrating screen plate 87 are both obliquely downward towards one side of the vibrating cylinder 82; the first material leakage box 88 is positioned at one end of the first layer of vibrating screen plate 86 which faces downwards, and the second material leakage box 89 is positioned at one end of the second layer of vibrating screen plate 87 which faces downwards. The inclination angles of the first-layer vibrating screen plate 86 and the second-layer vibrating screen plate 87 to the vibrating cylinder 82 are 1 ° to 5 °.
In order to ensure the screening effect of the granular silicon material, the mesh aperture of the two layers of vibrating screen plates 87 is smaller than that of the one layer of vibrating screen plate 86.
Claims (10)
1. The single crystal furnace for continuously pulling the single crystal is characterized in that: comprises a furnace body (1); a double-layer crucible (2) is arranged in the inner cavity of the furnace body (1); the upper end of the furnace body (1) is provided with a stretching device (16); an inert gas inlet (17) is arranged on the stretching device (16); a silicon material feeding device (8) is arranged at the upper end of the furnace body (1);
the lower end of the double-layer crucible (2) is provided with a graphite heating tray (3); a tray (4) is arranged below the graphite heating tray (3); the lower end of the tray (4) is provided with a towing rod (5); the towing rod (5) penetrates through the lower end of the furnace body (1);
an insulating layer (9) is arranged on the inner wall of the furnace body (1); a reflecting layer (12) is arranged at the bottom of the inner cavity of the furnace body (1); a heating resistor (10) is arranged between the double-layer crucible (2) and the heat-insulating layer (9); an inert gas suction port (13) is formed in the lower end of the furnace body (1); a guide cylinder (6) is arranged above the double-layer crucible (2);
the lower end of the furnace body (1) is provided with a heating electrode (11); the heating electrode (11) penetrates through the lower end of the furnace body (1) and is connected with the heating resistor (10);
the double-layer crucible (2) comprises an outer-layer crucible (21) and an inner-layer crucible cylinder (22); the inner layer crucible cylinder (22) is positioned in the outer layer crucible (21); a feeding interlayer (25) is arranged between the outer side of the side wall (23) of the inner layer crucible cylinder (22) and the inner wall of the outer layer crucible (21);
the lower end of the outer crucible (21) is provided with an annular conical surface (213); the lower end of the inner layer crucible cylinder (22) is connected with the inner wall of the annular conical surface (213); a through hole (26) is arranged between the lower end of the inner layer crucible cylinder (22) and the annular conical surface (213);
a heat insulation layer (24) is arranged in the side wall (23) of the inner layer crucible barrel (22); mounting bosses (214) are arranged at the middle position of the inner wall of the outer-layer crucible (21) and on the outer wall of the inner-layer crucible cylinder (22); a bushing plate (215) is arranged on the mounting boss (214);
the silicon material feeding device (8) comprises a material storage barrel (81); the lower end of the material storage barrel (81) is a conical end (812), and the conical end (812) is connected with a vibration barrel (82); a discharge valve is arranged between the lower end of the conical end (812) and the vibrating cylinder (82);
a vibrator (83) is arranged on the vibration cylinder (82); a first layer of vibrating screen plate (86) and a second layer of vibrating screen plate (87) are arranged in the vibrating cylinder (82);
the first layer of vibrating screen plate (86) is positioned above the second layer of vibrating screen plate (87); a first material leakage box (88) and a second material leakage box (89) are arranged on one side of the vibration cylinder (82);
a gap between the first layer of vibrating screen plate (86) and the top end of the vibrating cylinder (82) is communicated with the upper end of the first material leakage box (88); the gap between the first layer of vibrating screen plate (86) and the second layer of vibrating screen plate (87) is communicated with the upper end of the second material leakage box (89);
a material guide pipe (85) is arranged at the lower end of the vibration cylinder (82); a feeding pipe (811) is arranged above the material storage barrel (81); a stirring device (810) is arranged in the material storage cylinder (81);
the material guide pipe (85) penetrates through the top of the furnace body (1), extends into an opening (211) at the upper end of the outer crucible (21), and is positioned above the feeding interlayer (25).
2. A single crystal growing furnace for continuous Czochralski single crystal according to claim 1, wherein: a heat-preservation heating resistor (14) is arranged below the tray (4); the lower end of the furnace body (1) is provided with a second electrode (15) connected with a heat-preservation heating resistor (14).
3. A single crystal growing furnace for continuous Czochralski single crystal according to claim 2, wherein: the lower end of the guide shell (6) is provided with a back-off guide cover (7).
4. A single crystal growing furnace for continuous Czochralski single crystal according to claim 3, wherein: an opening (211) at the upper end of the outer layer crucible (21) is a bell mouth.
5. A single crystal growing furnace for continuous Czochralski single crystal according to claim 4, wherein: the pot bottom (212) of the outer layer crucible (21) is a flat bottom.
6. A single crystal growing furnace for continuous Czochralski single crystal according to claim 5, wherein: the outer crucible (21) and the inner crucible cylinder (22) are made of silicon carbide, silicon nitride or zirconium oxide.
7. A single crystal growing furnace for continuous Czochralski single crystal according to claim 6, wherein: the material guide pipe (85) is communicated with the lower end of the vibration cylinder (82) through a folding pipe (84).
8. A single crystal growing furnace for continuous Czochralski single crystal according to claim 7, wherein: the vibrator (83) adopts a bin wall vibrator.
9. A single crystal growing furnace for continuous Czochralski single crystal according to claim 8, wherein: the first layer of vibrating screen plate (86) and the second layer of vibrating screen plate (87) are obliquely arranged, and the first layer of vibrating screen plate (86) and the second layer of vibrating screen plate (87) are obliquely downward towards one side of the vibrating cylinder (82); the first material leakage box (88) is positioned at one end of the first layer of vibrating screen plate (86) which faces downwards, and the second material leakage box (89) is positioned at one end of the second layer of vibrating screen plate (87) which faces downwards.
10. A single crystal growing furnace for continuous Czochralski single crystal according to claim 9, wherein: the mesh aperture of the two layers of vibrating screen plates (87) is smaller than that of the one layer of vibrating screen plate (86).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202022051324.1U CN213652723U (en) | 2020-09-17 | 2020-09-17 | Single crystal furnace for continuous Czochralski single crystal pulling |
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| CN202022051324.1U CN213652723U (en) | 2020-09-17 | 2020-09-17 | Single crystal furnace for continuous Czochralski single crystal pulling |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116200805A (en) * | 2023-04-27 | 2023-06-02 | 北京大学 | Continuous Czochralski crystal pulling device and application method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116200805A (en) * | 2023-04-27 | 2023-06-02 | 北京大学 | Continuous Czochralski crystal pulling device and application method thereof |
| CN116200805B (en) * | 2023-04-27 | 2023-08-11 | 北京大学 | Continuous Czochralski crystal pulling device and application method thereof |
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