CN202954139U - Novel graphite guard plate for polycrystalline silicon cast ingot - Google Patents
Novel graphite guard plate for polycrystalline silicon cast ingot Download PDFInfo
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- CN202954139U CN202954139U CN 201220657688 CN201220657688U CN202954139U CN 202954139 U CN202954139 U CN 202954139U CN 201220657688 CN201220657688 CN 201220657688 CN 201220657688 U CN201220657688 U CN 201220657688U CN 202954139 U CN202954139 U CN 202954139U
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Abstract
The utility model discloses a novel graphite guard plate for a polycrystalline silicon cast ingot. The novel graphite guard plate is of a double-layer composite structure, one layer is of an isostatic pressing graphite material plate for playing a role in supporting a crucible, and the other layer is of a graphite carbon felt material plate for playing a heat insulation role. The novel graphite guard plate disclosed by the utility model has a reasonable structure, and the double-layer structure is adopted, so that the heat insulation of the graphite guard plate is improved under the situation of not reducing the anti-pressure ability of the graphite guard plate, the heat insulation role of the graphite guard plate against molten silicon in the crucible is further realized, the heat radiation from the side wall of the crucible is reduced, the more optimal vertical temperature gradient is realized for a thermal field of the cast ingot, and a high-quality polycrystalline silicon ingot or a quasi-monocrystalline silicon ingot is further produced.
Description
Technical field
The utility model relates to a kind of polycrystalline silicon ingot casting graphite backplate.
Background technology
Within 2012, the photovoltaic industry suffers the most serious in history " severe winter ".The bankruptcy of many companies, stopping production, integration.Yet Chinese photovoltaic industry is as a cold plum of novel industry, in environment like this, the proud end of the branch of standing on still.Polysilicon solar cell, due to the advantage of its low cost, high benefit, develops more powerful.In photovoltaic industry market, come out top.
Polycrystalline silicon ingot casting, as an important step on the polysilicon solar cell industrial chain, to a great extent, is determining performance and the quality of polysilicon solar cell.The polycrystalline silicon ingot casting process is that the irregular polycrystalline silicon raw material of outward appearance is contained in the high-purity ceramic crucible, realize heating, fusing, long crystalline substance, annealing, the step such as cooling in polycrystalline silicon ingot or purifying furnace, finally grow into shape rule, uniform crystal particles, polycrystal silicon ingot that crystal grain is larger.
At present, polycrystalline silicon ingot casting producer general operation method is: quartz ceramic crucible is placed on the graphite base plate, completes the polysilicon charging.By the graphite backplate be contained in crucible around, with the graphite bolt connected, fixing.With fork truck, crucible is transported in the ingot casting furnace chamber, after the furnace chamber that closes, starts heating, melt, long crystalline substance, annealing, the process such as cooling.The silicon material is in thawing, long brilliant process, and temperature maintains 1400 ℃-1550 ℃, and quartz ceramic crucible has now become soft state.If there is no the constraint of extraneous power, the quartz ceramic crucible wall will cave in, thereby causes the accidents such as silicon hydrorrhea stream.The graphite backplate can play the effect of constraint quartz ceramic crucible wall around connecting, be fixed on quartz ceramic crucible, thereby makes the quartz ceramic crucible wall under softening state, keeps original shape.
The graphite backplate current, that each producer is used is all to wait static pressure high purity graphite material.Deng static pressure high purity graphite material have high temperature resistant, higher ultimate compression strength, corrosion-resistant, than performances such as high heat-transfer performances, be widely used in making the graphite backplate.The graphite backplate has played very high effect as the propping material of quartz ceramic crucible, has effectively protected quartz ceramic crucible.
The isostatic pressing formed graphite backplate is owing to having higher heat transfer property, therefore, in the polycrystalline silicon growth process, the heat radiation of quartz ceramic crucible surrounding is very fast, thereby form from sidewall of crucible to the crucible center a horizontal thermograde.Due to the crucible wall lesser temps, the more easy forming core on sidewall of crucible of molten silicon around crucible.Under horizontal thermograde, nucleus is grown to crucible inside; Under vertical thermograde, nucleus also can upwards be grown.Under both actings in conjunction, the nucleus on sidewall of crucible is grown above the crucible middle part.
Breaking of vertical temperature gradient is disadvantageous to polycrystalline cast ingot growing polycrystalline silicon crystal.The crystal grain that forming core is grown up from crucible wall, will have a strong impact on the crystal mass of whole silicon ingot.Reducing and avoid on crucible wall the crystal grain that forming core is grown up, is very favorable for the raising of silicon ingot quality.The vertical temperature gradient of more optimizing is very effective for the crystal grain reduced and avoid the upper forming core of crucible test to grow up.
Current, the graphite backplate of high thermal conductivity, be disadvantageous for the realization of the vertical temperature gradient of more optimizing.Therefore, improve current graphite backplate, improve the heat retaining property of backplate, can effectively improve the vertical temperature gradient of ingot casting thermal field.
Summary of the invention
It is a kind of rational in infrastructure that the purpose of this utility model is to provide, and heat insulating ability is good, reduces the polycrystalline silicon ingot casting novel graphite backplate of the heat radiation of crucible wall.
Technical solution of the present utility model is:
A kind of polycrystalline silicon ingot casting novel graphite backplate is characterized in that: be two-layer composite, and the isostatic pressing formed graphite plate of material that one deck has been the crucible supporting function, another layer has been insulation effect graphite carbon felt plate of material.
The isostatic pressing formed graphite plate of material is connected by the graphite bolt with the graphite carbon felt plate of material.
The thickness of isostatic pressing formed graphite plate of material is 5 ~ 25mm, and the thickness of graphite carbon felt plate of material is 2 ~ 25mm.
The utility model is rational in infrastructure, adopt bilayer structure, in the situation that do not reduce graphite backplate anti-pressure ability, improve the heat insulating ability of graphite backplate, thereby realize the insulation effect of graphite backplate to molten silicon in crucible, reduce the heat radiation of crucible wall, be that the ingot casting thermal field is realized the vertical temperature gradient of more optimizing, thereby produce high-quality polycrystal silicon ingot or quasi-monocrystalline silicon ingot.
The novel graphite backplate is by use isostatic pressing formed graphite plate and graphite carbon felt fixed-link.The isostatic pressing formed graphite plate has its anti-pressure ability, and graphite carbon felt has heat insulation capacity preferably, therefore synthetic novel graphite backplate will have stronger anti-pressure ability and heat insulation capacity preferably.The anti-pressure ability that the novel graphite backplate is stronger, can play the supporting role to quartz ceramic crucible; The heat insulation capacity of novel graphite backplate can be to the insulation effect of molten silicon and quartz ceramic crucible sidewall, effectively reduce the Transverse Temperature Gradient of quartz ceramic crucible sidewall to center, thereby effectively improved the vertical temperature gradient of ingot casting thermal field, greatly improved the crystal mass of polycrystal silicon ingot.
Due to novel graphite backplate heat insulating ability preferably, the heat discharged by the quartz ceramic crucible sidewall greatly reduces, therefore Transverse Temperature Gradient reduces greatly, the forming core on the quartz ceramic crucible sidewall reduces, and crystal grain inwardly growth weakens.Be close to most the crucible wall silico briquette, from sidewall, the crystal grain of forming core growth reduces, and weakens to crucible central authorities growth tendency.Under vertical temperature gradient, the crystal grain growth tendency that makes progress strengthens, and illustrates that the novel graphite backplate has effectively improved the vertical temperature gradient in the ingot casting process.Adjacent crucible limit silicon chip efficiency improves the 0.15%-0.4% left and right, illustrates that crystal mass has obtained obvious improvement.
The accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Fig. 1 is the structural representation of an embodiment of the utility model.
Fig. 2 is the shape schematic diagram that isostatic pressing formed graphite is processed into.
Fig. 3 is the shape schematic diagram that graphite carbon felt is processed into.
Fig. 4 is use state graph of the present utility model.
Embodiment
Embodiment 1, a kind of polycrystalline cast ingot novel graphite backplate, wherein: what compression-resistant material was used is isostatic pressing formed graphite (thickness 5 ~ 25mm) 1; What thermal insulation material was used is graphite carbon felt (hard felt) 2, thickness 4mm.According to crucible size, the needed size of source mill, be fixed together isostatic pressing formed graphite and graphite carbon felt (hard felt) link by the graphite bolt, forms the novel graphite backplate.This graphite backplate not only can improve the required holding power of quartz ceramic crucible, and has adiabatic heat-insulation effect preferably, can effectively improve the vertical temperature gradient in the ingot casting process, improves crystal mass.
Embodiment 2, a kind of polycrystalline cast ingot novel graphite backplate, wherein: that compression-resistant material is used is isostatic pressing formed graphite (thickness 5 ~ 25mm); What thermal insulation material was used is graphite carbon felt (hard felt), thickness 25mm.According to crucible size, the needed size of source mill, be fixed together isostatic pressing formed graphite and graphite carbon felt (hard felt) link by the graphite bolt, forms the novel graphite backplate.This graphite backplate not only can improve the required holding power of quartz ceramic crucible, and has adiabatic heat-insulation effect preferably, can effectively improve the vertical temperature gradient in the ingot casting process, improves crystal mass.
Embodiment 3, a kind of polycrystalline cast ingot novel graphite backplate, wherein: that compression-resistant material is used is isostatic pressing formed graphite (thickness 5 ~ 25mm); What thermal insulation material was used is graphite carbon felt (soft felt), thickness 4mm.According to crucible size, the needed size of source mill, be fixed together isostatic pressing formed graphite and graphite carbon felt (soft felt) link by the graphite bolt, forms the novel graphite backplate.This graphite backplate not only can improve the required holding power of quartz ceramic crucible, and has adiabatic heat-insulation effect preferably, can effectively improve the vertical temperature gradient in the ingot casting process, improves crystal mass.
Embodiment 4, a kind of polycrystalline cast ingot novel graphite backplate, wherein: that compression-resistant material is used is isostatic pressing formed graphite (thickness 5 ~ 25mm); What thermal insulation material was used is graphite carbon felt (soft felt), thickness 25mm.According to crucible size, the needed size of source mill, be fixed together isostatic pressing formed graphite and graphite carbon felt (hard felt) link by the graphite bolt, forms the novel graphite backplate.This graphite backplate not only can improve the required holding power of quartz ceramic crucible, and has adiabatic heat-insulation effect preferably, can effectively improve the vertical temperature gradient in the ingot casting process, improves crystal mass.
Claims (3)
1. a polycrystalline silicon ingot casting novel graphite backplate is characterized in that: be two-layer composite, and the isostatic pressing formed graphite plate of material that one deck has been the crucible supporting function, another layer has been insulation effect graphite carbon felt plate of material.
2. polycrystalline silicon ingot casting according to claim 1 novel graphite backplate, it is characterized in that: the isostatic pressing formed graphite plate of material is connected by the graphite bolt with the graphite carbon felt plate of material.
3. polycrystalline silicon ingot casting according to claim 1 and 2 novel graphite backplate, it is characterized in that: the thickness of isostatic pressing formed graphite plate of material is 5 ~ 25mm, the thickness of graphite carbon felt plate of material is 2 ~ 25mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220657688 CN202954139U (en) | 2012-12-04 | 2012-12-04 | Novel graphite guard plate for polycrystalline silicon cast ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220657688 CN202954139U (en) | 2012-12-04 | 2012-12-04 | Novel graphite guard plate for polycrystalline silicon cast ingot |
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| Publication Number | Publication Date |
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| CN202954139U true CN202954139U (en) | 2013-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220657688 Expired - Lifetime CN202954139U (en) | 2012-12-04 | 2012-12-04 | Novel graphite guard plate for polycrystalline silicon cast ingot |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753844A (en) * | 2013-12-21 | 2014-04-30 | 湖北鄂信钻石材料有限责任公司 | Vacuum pressing method for superfine carbon green body |
| CN106350867A (en) * | 2016-11-17 | 2017-01-25 | 晶科能源有限公司 | Structure for installing heat insulation protection felt of polycrystalline silicon ingot production furnace and polycrystalline silicon ingot production furnace |
| CN107699947A (en) * | 2017-11-20 | 2018-02-16 | 江苏高照新能源发展有限公司 | A kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings |
| CN107761166A (en) * | 2017-10-27 | 2018-03-06 | 江苏高照新能源发展有限公司 | Suitable for lifting G8 silicon ingots corner crystalline substance brick crystal mass abnormal shape backplate |
-
2012
- 2012-12-04 CN CN 201220657688 patent/CN202954139U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103753844A (en) * | 2013-12-21 | 2014-04-30 | 湖北鄂信钻石材料有限责任公司 | Vacuum pressing method for superfine carbon green body |
| CN106350867A (en) * | 2016-11-17 | 2017-01-25 | 晶科能源有限公司 | Structure for installing heat insulation protection felt of polycrystalline silicon ingot production furnace and polycrystalline silicon ingot production furnace |
| CN107761166A (en) * | 2017-10-27 | 2018-03-06 | 江苏高照新能源发展有限公司 | Suitable for lifting G8 silicon ingots corner crystalline substance brick crystal mass abnormal shape backplate |
| CN107699947A (en) * | 2017-11-20 | 2018-02-16 | 江苏高照新能源发展有限公司 | A kind of thermal field structure suitable for G8 high-efficiency polycrystalline ingot castings |
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Granted publication date: 20130529 |
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| CX01 | Expiry of patent term |