CN115648467A - Process method for cutting <100> type 300mm single crystal silicon rod along specific crystal direction - Google Patents
Process method for cutting <100> type 300mm single crystal silicon rod along specific crystal direction Download PDFInfo
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Abstract
The invention provides a<100>The technical method for cutting the type semiconductor grade 300mm single crystal silicon rod along the specific crystal orientation is to directionally measure the cut single crystal silicon rod by an X-ray crystal orientation detector and determine the radial direction of the single crystal silicon rod
[011]、
And
and marking when the bar is adhered, strictly ensuring that any one crystal orientation direction in the crystal orientations is vertical to the graphite lining plate support for adhesion, and cutting the steel wire along the crystal orientation direction during cutting. Method selection of the invention
The Warp value of a silicon slice with four equivalent crystal orientation groups as the cutting-in directions can be controlled within 10 mu m, the Warp value of the silicon slice cut along the specific direction is reduced by about 5 mu m compared with the cutting along the optional direction, and the Waveness value of the silicon slice cut along the specific direction is controlled within 0.8 mu m and is reduced by about 0.7 mu m compared with the cutting along the optional direction.
Description
Technical Field
The invention belongs to the technical field of processing of 300mm silicon wafers for integrated circuits, and particularly relates to a process method for cutting a <100> type 300mm single crystal silicon rod along a specific crystal orientation.
Background
Monocrystalline silicon is a crystal with a complete lattice structure, has active chemical properties at high temperature, forms a heterojunction with functional materials, participates in realizing device functions, and becomes the most widely applied substrate material in integrated circuits at the present stage. With the continuous development of semiconductor chips towards small size, high integration and low power consumption, the silicon wafer has the characteristic of large diameter, the diameter of the mainstream product of the existing silicon wafer is 300mm, the processing precision and the surface quality of a large-size monocrystalline silicon wafer have higher requirements, and an ultra-flat and nondestructive surface is required.
The slicing is a key process of silicon wafer processing, determines several important surface state quality parameters of the silicon wafer, such as total thickness deviation (TTV), curvature (Bow), warping degree (Warp) and nano-morphology (NT), and the like, particularly the Warp value and saw cutting waviness (Waveness) generated in the slicing process are inherited, and are difficult to improve in the subsequent processes (for example, surface finish < Grinding > and polishing), wherein the Waveness value can cause the nano-morphology NT after the silicon wafer is polished to be bad, and the finished product rate of the final silicon wafer is directly influenced. The multi-wire cutting of the silicon wafer is a current advanced silicon wafer processing technology, is different from cutting modes of traditional knife saw blades, grinding wheels and the like, and the principle of the multi-wire cutting of the silicon wafer is that slurry sprayed is driven to rub a silicon rod through a group of steel wires which exert certain tension and move at high speed, so that the cutting effect is achieved. The multi-wire cutting has the advantages of high efficiency, low loss, high surface precision and suitability for cutting large-diameter monocrystalline silicon rods, and is widely applied to processing of 300mm silicon wafers.
Multi-wire cutting<100>When the silicon wafer is molded, any direction parallel to the (100) crystal plane can be used as the cutting-in direction, and the cutting-in direction is opposite to the feeding direction of the silicon rod. Since the crystal hasThe single crystal silicon is not completely symmetrical, the single crystal silicon is anisotropic, the scattered facets parallel to the wire saw during wire cutting represent different crystal faces, and have different elastic modulus, hardness and fracture toughness values, and different notch mechanical characteristics can cause the quality difference of the cut faces during multi-wire cutting, so that the cutting-in direction of the cutting wire can inevitably influence the Warp value of the silicon wafer and the Waveness value generated by wire cutting, and finally the surface quality of the wafer is influenced. Theoretical research on improving the Warp value of a silicon slice by oriented cutting is carried out, for example, the invention patent with the patent number of CN201711037057.9 discloses a method for improving the Warp value of the silicon slice by oriented cutting<111>200mm heavy-doped monocrystalline silicon multi-wire cutting process along radial direction of silicon rod
Cutting is carried out in six crystal orientation directions, and the Warp value of the monocrystalline silicon slice can be effectively reduced.
However, the method has not been applied to the field of cutting <100> type semiconductor grade 300mm lightly doped monocrystalline silicon rods, and the <111> type monocrystalline silicon is greatly different from the <100> type monocrystalline silicon in terms of crystal structure, and the technical route of the patent cannot be simply grafted to the <100> type semiconductor grade 300mm lightly doped monocrystalline silicon slicing process. And as the integrated circuit chip process node technology becomes higher, the requirement on the surface state quality parameters of the substrate material silicon wafer is higher, the existing silicon wafer processing technology is close to the limit, which means that the decrease of the Warp value by several microns and the decrease of the Waveness value by several microns are very difficult.
Therefore, there is still a need to develop a cutting process specific to a <100> type 300mm single crystal silicon rod.
Disclosure of Invention
The applicant researches and discovers that the selection of the cutting direction of the <100> type 300mm lightly doped silicon rod is important for controlling the surface state quality parameter of the silicon slice because the crystal has incomplete symmetry. Compared with the optional cutting direction, the selection of the proper crystal orientation for cutting not only can effectively reduce the Warp value of the large-size silicon slice, but also has the outstanding effect of improving the Waveness value of the surface of the silicon slice and can improve the processing precision and the surface quality of the silicon slice, thereby completing the invention.
The invention provides a multi-wire cutting method of a 100 type 300mm single crystal silicon rod in a specific direction, which aims to improve the surface state quality of a sliced silicon wafer. By selecting a proper crystal orientation as the cutting-in direction of linear cutting, the Warp value and the Waveness value of the silicon slice are effectively reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
a process method for cutting a <100> type 300mm single crystal silicon rod along a specific crystal direction comprises the following steps:
1) Will be cut off<100>Performing barreling processing on a 300 mm-shaped single crystal silicon rod, performing directional measurement on the crystal direction of the single crystal silicon rod by using an X-ray crystal direction detector, and determining the radial direction of the single crystal silicon rod<011>Of equal crystal orientation groups, i.e.
[011]、
And
the position of the four crystal directions;
2) Marking out by marking
[011]、
And
obtaining marking lines of specific crystal directions at the positions of the four crystal directions;
3) In the rod bonding process, any marking line is perpendicular to the horizontal plane of the graphite lining plate support by rotating the single crystal silicon rod, so that the single crystal silicon rod is bonded in a state that any specific crystal orientation is perpendicular to the graphite lining plate support;
4) And cutting the bonded silicon single crystal rod by using a multi-wire cutting machine along the marking line direction to obtain a 300mm large silicon wafer.
In a specific embodiment, the process method further comprises the steps of degumming and cleaning the cut 300mm large silicon wafer.
In a preferred embodiment, the method further comprises the step of measuring the Warp value and the Waveness value by using a flatness measuring instrument.
In a specific embodiment, the size of the silicon rod after the truncation and barreling processing in the step 1) is as follows: the length is 400-450 mm, and the diameter is 301 +/-0.5 mm.
In a specific embodiment, the size of the silicon rod after the truncation and barreling processing in the step 1) is as follows: 400mm in length and 301mm in diameter.
In a specific embodiment, the number of the marked lines of the specific crystal orientation in step 2) is two.
In a specific embodiment, the slice thickness of the multi-wire cutting machine in the step 4) is 900 μm, and the diameter of the cutting wire is 0.12mm.
In a specific embodiment, the wire tension of the multi-wire saw in step 4) is 25N, and the wire feeding speed is 750m/min.
In a specific embodiment, the cutting speed of the multi-wire saw in the step 4) is 200-320 mu m-min -1 。
In a specific embodiment, the Warp value of the silicon slice can be controlled within 10 μm, and the Waveness value can be controlled within 0.8 μm.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for cutting by selecting a specific crystal orientation<100>The method is a process for shaping a 300mm single crystal silicon rod, thereby reducing the Warp value and Waveness value of a silicon slice. By adopting the process method, the removal rates of materials on two sides of a wire saw during cutting of the silicon single crystal rod can be relatively consistent, the cutting stress is kept stable, the offset of a cutting line in the cutting process is effectively reduced, the Warp value of a silicon slice can be reduced, the undulation degree of a cutting line mark is reduced, and further the reduction of the Warp value of the silicon sliceWaveness of silicon-poor slices. Wherein, selecting
The Warp value of a silicon slice with four equivalent crystal orientation groups as the cut-in direction can be controlled within 10 μm, the Waveness value can be controlled within 0.8 μm, and compared with the cutting in the optional direction, the Warp value of the silicon slice cut along the specific direction is reduced by about 5 μm, and the Waveness value is reduced by about 0.7 μm.
Drawings
FIG. 1 is a schematic view of a <011> equivalent crystal orientation group of a <100> type single crystal silicon rod according to the present invention.
FIG. 2 is a schematic view of the minimum symmetric crystal orientation of a <100> type single crystal silicon rod according to the present invention.
FIG. 3 is a schematic diagram of another selected orientation of the cleaved crystals of a comparative example of the present invention.
FIG. 4 is a schematic diagram of scribing marks along a specific crystal direction according to the present invention.
Fig. 5 is a schematic view showing a cutting direction of the silicon rod according to the present invention.
Detailed Description
The following examples further illustrate the method of the present invention in order to better understand the technical solution of the present invention, but the present invention is not limited to the listed examples, and also includes any other known modifications within the scope of the claims of the present invention.
A multi-line cutting method of a <100> type 300mm single crystal silicon rod along a specific crystal direction comprises the following steps:
1) Will be cut off<100>Carrying out barreling processing on the model 300mm single crystal silicon rod, and carrying out directional measurement on the crystal direction of the single crystal silicon rod by using an X-ray crystal orientation detector; determining the radial direction of the silicon single crystal rod<011>Of the same crystal orientation group, i.e. of
[011]、
And
the position of the four crystal directions.
Wherein, the size of the silicon rod after the cutting and barreling processing is as follows: length 400-450 mm, diameter 301 + -0.5 mm, for example, silicon rod size: the length is 400mm, and the diameter is 301mm. And (3) carrying out crystal orientation detection on the silicon rod after the rolling grinding and cutting by adopting a crystal orientation detector of the semiconductor monocrystalline silicon wafer, and determining the target crystal orientation position.
2) Marking the determined crystal orientation position on the end face of the silicon rod by marking
[011]、
And
the positions of the four crystal directions are used to obtain a marking line with a specific crystal direction, as shown in fig. 1, as the cutting direction of the wire cutting in the embodiment of the present invention.
3) In the rod bonding process, the single crystal silicon rod is bonded in a state that any specific crystal orientation is vertical to the graphite lining plate support by rotating the single crystal silicon rod to enable any mark line to be vertical to the horizontal plane of the graphite lining plate support, as shown in fig. 4. In the rod bonding process, the marking line is perpendicular to the horizontal plane of the graphite lining plate support by rotating the single crystal silicon rod, and the condition that any one of the crystal directions is perpendicular to the graphite lining plate support for bonding is strictly ensured.
4) And cutting the bonded single crystal silicon rod by using a multi-wire cutting machine along the marking line direction, and obtaining a 300mm large silicon wafer as shown in figure 5.
Specifically, according to the process requirements, reasonable process parameters are selected on a multi-wire cutting machine, and multi-wire cutting is carried out on the bonded silicon single crystal rod. For example, the parameters of the wire cutting process are as follows: the slice thickness is 900 μm, the cutting wire diameter is 0.12mm, the cutting wire tension is 25N, the wire feeding speed is 750m/min, and the cutting speed parameters of each cutting position of the experimental silicon rod are shown in Table 1.
5) And degumming, cleaning and spin-drying the cut silicon wafer, and measuring a Warp value and a Waveness value.
TABLE 1 Experimental silicon rod cutting speed parameters
And uniformly extracting 15 silicon slices, measuring on an LBW-3020R flatness measuring instrument additionally provided with a Waveness visual detection function, and recording the maximum value, the minimum value and the average value of the Warp and the Waveness.
On the other hand, the cutting method capable of improving the cutting Warp value of the <100> crystal orientation 300mm single crystal silicon rod comprises the following steps:
1) And before the silicon rod after the cutting and barreling processing is bonded, the crystal orientation of the silicon rod is directionally measured by a crystal orientation detector through rotation or movement.
The crystal orientation detector and the rod sticking machine adopted by the invention are a DXL-C1018 type semiconductor monocrystalline silicon wafer crystal orientation detector and a DXH-E7DZ type semiconductor monocrystalline silicon rod sticking machine which are produced in the New Oriental Dandong, and both are special processing equipment for large-size monocrystalline silicon rods.
2) Determining the crystal orientation position of a single crystal silicon rod, i.e.
[011]、
And
marking the positions of the four crystal directions;
3) In the rod bonding process, the marking line is vertical to the horizontal plane of the graphite lining plate support, so that the marked crystal orientation direction is strictly ensured to be vertical to the graphite lining plate support for bonding;
4) And cutting the bonded silicon single crystal rod on a multi-wire cutting machine. And cutting one silicon rod mortar in each group, recording the use times of the silicon rod mortar once after each silicon rod mortar is cut, and using the silicon rod mortar twice.
5) And (3) cutting each group into two pieces, namely using the mortar twice, degumming, cleaning and spin-drying the silicon slices, uniformly extracting 15 silicon slices from each group, measuring on an LBW-3020R flatness measuring instrument with a Waveness visual detection function, and recording the maximum value, the minimum value and the average value of the Warp and the Waveness.
In the comparative examples of the present invention, in order to show the comparison between different cutting directions, the crystal structure was determined<100>The minimum symmetric unit of the crystal cell of the type monocrystalline silicon is determined, and the crystal orientation positions symmetrically distributed on two sides are determined as the linear cutting cut-in direction of the comparative example of the invention. Wherein, the first and the second end of the pipe are connected with each other,<100>the minimum symmetry unit of the crystal cell of type monocrystalline silicon is 45,<100>the minimum symmetric crystal orientation of the silicon single crystal ingot in the radial direction is determined as [010]]、[001]、
And
four crystallographic orientation positions, as shown in fig. 2.
Selecting a certain number of other different crystal orientations, and respectively determining positions as the linear cutting cut-in direction of the comparative example; wherein the pair
Crystal orientation to [010]]Crystal orientation, [011]]Crystal orientation to [001]]The crystal orientation,
Crystal orientation to
Crystal orientation and
crystal orientation to
The range of crystal orientations is evenly trisected and the corresponding crystal orientations are marked as crystal orientations 1 and 2, 3 and 4, 5 and 6, and 7 and 8, as shown in fig. 3.
The invention is further illustrated, but not limited, by the following more specific examples.
Except for special description, the parameters of the linear cutting process are as follows: the slice thickness is 900 mu m, the cutting line diameter is 0.12mm, the cutting line tension is 25N, the wire feeding speed is 750m/min, the granularity of the silicon carbide micro powder in the mortar is #1500, the viscosity of the mortar is 95mP.s, and the density of the mortar is 1.63-1.64 g/cm 3 The mortar temperature is 24 ℃, and the mortar flow is 100L/min between the positions with the cutting depth of 0mm-180 mm; when the cutting depth reaches 180mm, the flow rate of the mortar is linearly decreased, and when the cutting depth is 301mm, the flow rate of the mortar is 70L/min.
Example 1
Selection in this example
The crystal orientation is the cut-in direction. Selecting a section of silicon rod which is well rounded, wherein the size is as follows: 400mm in length and 301mm in diameter, and using DXL-C1018 type semiconductor monocrystalline silicon wafer crystal orientation detector pair<100>Carrying out directional measurement on the crystal orientation of the 300 mm-shaped single crystal silicon rod and determining
And (3) fixing the positioned silicon single crystal rod on a rod sticking machine at the crystal orientation position, and cutting on a multi-wire cutting machine according to the process parameters shown in the table 1.
The above edge is put
After the silicon slices after crystal orientation cutting are degummed and cleaned, the Warp value and the Waveness value are measured. The two silicon rods, i.e. the mortar, were cut in this set twice, 15 silicon slices were extracted for measurement and the maximum of Warp and Waveness was recordedValue, minimum and average.
TABLE 2 edge
Surface parameters of silicon wafer after crystal orientation cutting
Example 2
Compared with example 1, in this example, the [011] crystal orientation was selected as the cut-in direction, the cutting was performed on a multi-wire saw without changing other process conditions, and the maximum value, the minimum value, and the average value of Warp and Waveness were recorded.
TABLE 3 silicon wafer surface parameters after cutting along [011] crystallographic direction
Example 3
In this example, selection was made in comparison with example 1
The crystal orientation is used as the cutting-in direction, other process conditions are unchanged, cutting is carried out on a multi-wire cutting machine, and the maximum value, the minimum value and the average value of the Warp and the Waveness are recorded.
TABLE 4 edge
Surface parameters of silicon wafer after crystal orientation cutting
Example 4
In this example, selection was made in comparison with example 1
The crystal orientation is used as the cutting-in direction, other process conditions are unchanged, cutting is carried out on a multi-wire cutting machine, and the maximum value, the minimum value and the average value of the Warp and the Waveness are recorded.
TABLE 5 edge
Surface parameters of silicon wafer after crystal orientation cutting
Comparative example 1
Compared with the example 1, under the condition of ensuring that other process conditions are not changed, the three groups of experimental silicon rods in the comparative example respectively select the crystal orientation 1, the crystal orientation 2 and the [010] crystal orientation as the cut-in directions, and record the maximum value, the minimum value and the average value of the Warp and the Waveness.
TABLE 6 silicon wafer surface parameters after dicing in other crystallographic directions
Comparative example 2
Compared with example 2, under the condition of ensuring that other process conditions are not changed, the three groups of experimental silicon rods in the comparative example respectively select the crystal orientation 3, the crystal orientation 4 and the [001] crystal orientation as the cut-in directions, and record the maximum value, the minimum value and the average value of Warp and Waveness.
TABLE 7 silicon wafer surface parameters after dicing in other crystallographic directions
Comparative example 3
Compared with example 3, under the condition of ensuring that other process conditions are not changed, the three groups of experimental silicon rods in the comparative example respectively select the crystal orientation 5, the crystal orientation 6 and the crystal orientation
The crystal orientation was taken as the direction of cut, and the maximum, minimum and average values of Warp and Waveness were recorded.
TABLE 8 silicon wafer surface parameters after dicing in other crystallographic directions
Comparative example 4
Compared with example 4, under the condition of ensuring that other process conditions are not changed, the crystal orientations of the three experimental silicon rods in the comparative example are respectively selected from crystal orientation 7, crystal orientation 8 and crystal orientation
The crystal orientation was taken as the direction of cut, and the maximum, minimum and average values of Warp and Waveness were recorded.
TABLE 9 silicon wafer surface parameters after dicing in other crystallographic directions
The result of the measured data shows that: by adopting the process method, the process can be effectively reduced<100>Warp value and Waveness value of type 300mm monocrystalline silicon sliceCompared with cutting in other directions, under the condition of the same process conditions and the same use times of mortar, selecting
The Warp value of a silicon slice with four equivalent crystal orientation groups as the cut-in directions can be controlled within 10 μm, and compared with the cutting in the optional direction, the WARP value of the cutting along the specific direction is reduced by about 5 μm. While the Waveness value can be controlled to be within 0.8 μm, the Waveness value for cutting along the above-mentioned specific direction is reduced by about 0.7 μm compared with the optional direction cutting.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. It will be appreciated by those skilled in the art that modifications or adaptations to the invention may be made in light of the teachings of the present specification. Such modifications or adaptations are intended to be within the scope of the present invention as defined in the claims.
Claims (10)
1. A process method for cutting a <100> type 300mm single crystal silicon rod along a specific crystal direction is characterized by comprising the following steps:
1) Will be cut off<100>Performing barreling processing on a 300 mm-shaped single crystal silicon rod, performing directional measurement on the crystal direction of the single crystal silicon rod by using an X-ray crystal direction detector, and determining the radial direction of the single crystal silicon rod<011>Of equal crystal orientation groups, i.e.
[011]、
And
the position of the four crystal directions;
2) Marking out by marking
[011]、
And
obtaining marking lines of specific crystal directions at the positions of the four crystal directions;
3) In the rod bonding process, any marking line is perpendicular to the horizontal plane of the graphite lining plate support by rotating the single crystal silicon rod, so that the single crystal silicon rod is bonded in a state that any specific crystal orientation is perpendicular to the graphite lining plate support;
4) And cutting the bonded silicon single crystal rod by using a multi-wire cutting machine along the marking line direction to obtain a 300mm large silicon wafer.
2. The process of claim 1, further comprising the steps of degumming and cleaning the cut 300mm large silicon wafer.
3. The process of claim 2, further comprising the step of measuring the Warp and Waveness values with a flatness meter.
4. The process according to claim 1, wherein the size of the silicon rod after the truncation and barreling in step 1) is as follows: the length is 400-450 mm, and the diameter is 301 +/-0.5 mm.
5. The process according to claim 4, wherein the silicon rod size after the truncation and barreling process in step 1) is as follows: 400mm in length and 301mm in diameter.
6. The process of claim 1, wherein the number of the specific crystal orientation mark lines in step 2) is two.
7. The process of claim 1, wherein the multi-wire saw in step 4) has a slice thickness of 900 μm and a cutting wire diameter of 0.12mm.
8. Process according to claim 1 or 7, characterized in that the wire tension of the multi-wire saw in step 4) is 25N and the wire feed speed is 750m/min.
9. The process of claim 1, wherein the cutting speed of the multi-wire saw in the step 4) is 200-320 μm-min -1 。
10. The process of claim 3, wherein the Warp value of the silicon slice is controlled to be within 10 μm and the Waveness value is controlled to be within 0.8 μm.
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