CN207630298U - A kind of ultra high efficiency multi-wire saw diamond wire - Google Patents
A kind of ultra high efficiency multi-wire saw diamond wire Download PDFInfo
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- CN207630298U CN207630298U CN201721231687.5U CN201721231687U CN207630298U CN 207630298 U CN207630298 U CN 207630298U CN 201721231687 U CN201721231687 U CN 201721231687U CN 207630298 U CN207630298 U CN 207630298U
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- diamond
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- busbar
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Abstract
The utility model provides a kind of ultra high efficiency multi-wire saw diamond wire, including busbar and diamond particles, it include pre-plating layer on the busbar, it include diamond particles coating layer on the diamond particles, diamond particles are reinforced by least two layers of thickening layer on busbar, the thickening layer on pre-plating layer and the diamond wire on the busbar uses electronickelling, diamond particles coating layer uses chemical nickel plating, the thickness of pre-plating layer and diamond coating layer on busbar is 0.2 ~ 2um, thickening layer thickness on the diamond wire is 1 ~ 5um, diamond particles density is 200 ~ 500/mm, a diameter of 5 ~ the 16um of diamond particles.The utility model diamond wire is by repeatedly thickening, diamond particles are enabled to wrap up tight, diamond particles coating has " cracking " pattern, cracky, in cutting stress moment, outer " cracking " coating of diamond particles can wear away coating by stress concentration, expose cutting edge rapidly convenient for diamond, the cutting force for playing diamond, so as to improve processing efficiency.
Description
Technical field
The utility model is related to diamond wire technical field, especially a kind of Ultra-High Efficiency multi-wire saw diamond wire, more into one
Step is a kind of diamond wire for cutting hard brittle material, is widely used in solar level monocrystalline silicon piece, polysilicon chip, semiconductor die
The cutting of the hard brittle materials such as circle, sapphire, quartz, ceramics, glass, hard alloy, neodymium iron boron.
Background technology
Hard brittle material using increasingly extensive, include mainly crystalline silicon, sapphire, quartz, ceramics, glass, hard alloy,
Neodymium iron boron etc..Since most of hard brittle materials are expensive,, effect low for loss to the general requirement of hard brittle material processing
Rate is high, at low cost, pollution is small etc., and cutting processing is most common one kind in current hard brittle material processing method, common cutting
Mode has laser cutting, machine cuts, machine cuts to be divided into rigidity cutting and cut with flexible.With solar photovoltaic industry by
Flaring is big, and the processing of crystalline silicon is increasingly taken seriously.The cutting processing of crystalline silicon is mainly using the flexibility in machine cuts
It cuts to complete.Flexibility cutting is cut to crystalline silicon using a kind of high-carbon steel wire combination abrasive grain.Currently, mainly using soft
Property cutting in diamond wire cutting mode.
However, using existing Buddha's warrior attendant wire cutting, a workpiece (specification 8.4inch, length 650mm) is often cut,
The required time is 2~3h, and either from enterprise itself profit direction, or from the point of view of the market demand, existing efficiency is not
It can meet the requirements.It is studied from diamond wire itself, the principal element for influencing diamond wire cutting efficiency has：The plating thickness of diamond
Degree, coating morphology feature, particle diameter, height of protrusion, distribution of particles, agglomeration, busbar tensile strength etc..
Utility model content
To solve the problems, such as that existing diamond wire cutting efficiency is low, the utility model provides a kind of ultra high efficiency multi-wire saw gold
Rigid line.The utility model is from the thickness of coating of diamond, coating morphology feature, particle diameter, height of protrusion, distribution of particles, group
Improvement is optimized in terms of poly- phenomenon, busbar tensile strength, especially from the thickness of coating of diamond, coating morphology feature,
A kind of ultra high efficiency multi-wire saw diamond wire that optimization improves and provides is made that on particle diameter.
Term is explained：
TTV：Total Thickness Variation abridge, the maximum gauge of each test dot thickness on individual silicon chip
The difference of value and minimum thickness value.
Stria value：In diamond wire cutting process, the trace of recess or protrusion that diamond is streaked in silicon chip surface is high
Degree is poor.
Yield rate：A collection of silicon chip is detected by current industry silicon chip standard detecting method, passes through quantity and the total detection of detection
The ratio of quantity.
The purpose of this utility model is achieved through the following technical solutions：
A kind of ultra high efficiency multi-wire saw diamond wire, including busbar and diamond particles include pre-plating layer, institute on the busbar
It includes diamond particles coating layer to state on diamond particles, and diamond particles are reinforced by least two layers of thickening layer on busbar,
The thickening layer on pre-plating layer and the diamond wire on the busbar uses electronickelling, diamond particles coating layer to use chemical plating
The thickness of nickel, pre-plating layer and diamond coating layer on busbar is 0.2~2um, the thickening layer thickness on the diamond wire is 1~
5um, diamond particles density are 200~500/mm, a diameter of 5~16um of diamond particles.
As the preferred technical solution of the utility model, which includes busbar and diamond particles, on the busbar
Include diamond particles coating layer including pre-plating layer, on the diamond particles, diamond particles pass through the first thickening layer and the
Two thickening layers are reinforced on busbar.
As the preferred technical solution of the utility model, the diamond particles coating layer through thickening processing on the diamond wire
Appearance has " cracking " pattern, makes diamond particles coating cracky.
As the preferred technical solution of the utility model, a diameter of 8~16um of the diamond particles and shape appearance has
There is good consistency.
As the preferred technical solution of the utility model, the diamond particles height of protrusion is 3~8um and high uniformity
Unanimously.
As the preferred technical solution of the utility model, the diamond particles density is 300~450/mm.
Compared with prior art, the beneficial effects of the utility model：
(1) diamond wire of the utility model has superpower cutting force compared to same specification product, can be complete in 1 hour
Pairs of 8.4inch, the cutting of the silicon rod of length 650mm~700mm.
(2) the diamond wire nickel layer of the utility model enables to diamond particles to wrap up tight, is somebody's turn to do by repeatedly thickening
The diamond particles coating layer appearance through thickening processing on diamond wire has " cracking " pattern, keeps diamond particles coating fragile
Damage, in cutting stress moment, outer " cracking " coating of diamond particles can wear away coating by stress concentration, be convenient for diamond
It is rapid to expose cutting edge, the cutting force of diamond is played, so as to improve processing efficiency.
(3) the diamond particles diameter on the diamond wire of the utility model, shape, height of protrusion consistency are good, Neng Goujin
One step improves silicon chip quality, such as low TTV, low stria value, and height of protrusion appropriate enables old line to have certain cutting
Power.
(4) the utility model product can improve cutting efficiency first；Meanwhile reduction clipping time itself can be greatly reduced
Breakage ratio promotes product yield in turn；More it is essential that slice quality can be substantially improved.The utility model product can also answer
Cutting for hard brittle materials such as semiconductor circle silicon chip, sapphire, quartz, ceramics, hard alloy, neodymium iron borons.
Description of the drawings
Fig. 1 is diamond wire cross-sectional configuration schematic diagram；
Fig. 2 is the structural schematic diagram of diamond after plating；
In figure：1- busbares, 2- pre-plating layers, the first thickening layers of 3-, the second thickening layers of 4-, 5- diamond particles, 6- diamonds
Particle coating layer.
Specific implementation mode
Figures 1 and 2 show that a kind of a kind of ultra high efficiency multi-wire saw diamond wire of embodiment according to the present utility model
Schematic cross-sectional view and diamond wire on diamond particles structural schematic diagram.Refering to fig. 1 and Fig. 2, the diamond wire include busbar 1
Include pre-plating layer 2 on the busbar 1 with diamond particles 5, include diamond particles coating layer 6 on the diamond particles 5,
Diamond particles 5 are reinforced by least two layers of thickening layer on busbar 1, on the pre-plating layer 2 and the diamond wire on the busbar 1
Thickening layer uses electronickelling, diamond particles coating layer 6 to use chemical nickel plating, the pre-plating layer 2 on busbar 1 and diamond coating layer
6 thickness is 0.2~2um, and the thickening layer thickness on the diamond wire is 1~5um, diamond particles density is 200~500/
Mm, a diameter of 5~16um of diamond particles.In the another embodiment of the utility model, which includes 1 He of busbar
Diamond particles 5, include pre-plating layer 2 on the busbar 1, include diamond particles coating layer 6, gold on the diamond particles 5
Hard rock particle 5 is reinforced by the first thickening layer 3 and the second thickening layer 4 on busbar 1, the pre-plating layer 2 on the busbar 1 and the gold
Thickening layer on rigid line uses electronickelling, diamond particles coating layer 6 to use chemical nickel plating, pre-plating layer 2 and Buddha's warrior attendant on busbar 1
The thickness of stone coating layer 6 is 0.2~2um, the sum of thickness of the first thickening layer and the second thickening layer on the diamond wire for 1~
5um, diamond particles density are 200~500/mm, a diameter of 5~16um of diamond particles.The purpose of the thickening layer is
In order to enhance the adhesive force of diamond particles, falling off for diamond particles is reduced.
In a kind of embodiment of the utility model, the diamond particles coating layer through thickening processing on the diamond wire
7 appearances have " cracking " pattern, make diamond particles coating cracky.In cutting stress moment, diamond particles are outer " cracking "
Coating can wear away the coating of outer layer by stress concentration, exposes cutting edge rapidly convenient for diamond, plays diamond
Cutting force, so as to improve processing efficiency.
In a kind of embodiment of the utility model, a diameter of 8~16um of the diamond particles and shape appearance has
There is good consistency, can ensure that diamond wire is uniform along one week cutting force of center line in cutting process, can be reduced in this way
The apparent exception of silicon chip.
In a kind of embodiment of the utility model, the diamond particles height of protrusion is 3~8um and high uniformity
Unanimously, it can ensure that diamond wire envelope outer diameter is consistent in this way, line footpath fluctuation is small so that old line has certain cutting force.
In a kind of embodiment of the utility model, the diamond particles density is 300~450/mm, this is close
Degree can ensure that diamond wire adapts to different model slicer, can broadly promote and apply.
With reference to specific embodiment, the utility model is described in more detail.
Embodiment 1
The a diameter of 80um of the present embodiment median generatrix, to cut 190um thickness silicon chips, slot pitch 0.290um, length 650mm
Silicon rod, diamond particles density be 300 ± 50/mm, diamond particles diameter mean value be 10um, diamond exposure 8um,
It is 5um that layer thickness is thickeied on diamond wire.
It is mounted on the QPJ1660B/C cutting machines of Dalian Liancheng as cutting line, cutting using the cutting line of the present embodiment
Power is 14N, and 21 ± 1 DEG C, cutting speed 1300m/min of cutting liquid temperature, worked crystal silicon rod size is 8.4inch, length
650mm, process time 60min, specific cutting experiment data such as table 1.
1 embodiment of table, 1 cutting experiment data
Embodiment 2
The a diameter of 70um of the present embodiment median generatrix, to cut 190um thickness silicon chips, slot pitch 0.280um, length 650mm
Silicon rod, diamond particles density are 430 ± 20/mm, and diamond particles diameter mean value is 8.8um, diamond exposure
7um, it is 4.5um that layer thickness is thickeied on diamond wire.
It is mounted on the QPJ1660B/C slicers of Dalian Liancheng as cutting line, cutting using the cutting line of the present embodiment
Power is 12N, and 19 ± 1 DEG C, cutting speed 1300m/min of cutting liquid temperature, worked crystal silicon rod size is 8.4inch, length
650mm, process time 60min, specific cutting experiment data such as table 2.
2 embodiment of table, 2 cutting experiment data
Embodiment 3
The a diameter of 70um of embodiment median generatrix, to cut 190um thickness silicon chips, slot pitch 0.280um, length 700mm silicon
Stick, diamond particles density be 430 ± 20/mm, diamond particles diameter mean value be 8.8um, diamond exposure 7um,
Layer thickness 4.5um is thickeied on diamond wire.
It is mounted on Wuxi on machine WSK027BL slicers as cutting line, cutting using the cutting line of the utility model
Power is 12N, and 19 ± 1 DEG C, cutting speed 1500m/min of cutting liquid temperature, worked crystal silicon rod size is 8.4inch, length
700mm, process time 45min, specific cutting experiment data such as table 3.
It is noted that embodiment described above is to the illustrative and not limiting of technical solutions of the utility model, affiliated skill
The equivalent replacement of art field those of ordinary skill or the other modifications made according to the prior art, as long as it is new not exceed this practicality
The thinking and range of type technical solution, should be included within the interest field required by the utility model.
Claims (6)
1. a kind of ultra high efficiency multi-wire saw diamond wire, including busbar and diamond particles, which is characterized in that include on the busbar
Pre-plating layer, includes diamond particles coating layer on the diamond particles, and diamond particles pass through at least two layers of thickening layer and reinforce
On busbar, the thickening layer on pre-plating layer and the diamond wire on the busbar uses electronickelling, diamond particles coating layer to adopt
With chemical nickel plating, the thickness of pre-plating layer and diamond coating layer on busbar is 0.2 ~ 2um, the thickening layer thickness on the diamond wire
For 1 ~ 5um, diamond particles density is 200 ~ 500/mm, a diameter of 5 ~ 16um of diamond particles.
2. a kind of ultra high efficiency multi-wire saw diamond wire according to claim 1, which is characterized in that the diamond particles pass through
First thickening layer and the second thickening layer are reinforced on busbar.
3. a kind of ultra high efficiency multi-wire saw diamond wire according to claim 1 or 2, which is characterized in that on the diamond wire
Diamond particles coating layer appearance through thickening processing has " cracking " pattern, makes diamond particles coating cracky.
4. a kind of ultra high efficiency multi-wire saw diamond wire according to claim 1 or 2, which is characterized in that the diamond
A diameter of 8 ~ the 16um of grain and shape appearance has good consistency.
5. a kind of ultra high efficiency multi-wire saw diamond wire according to claim 1 or 2, which is characterized in that the diamond
Grain height of protrusion is 3 ~ 8um and high uniformity is consistent.
6. a kind of ultra high efficiency multi-wire saw diamond wire according to claim 1 or 2, which is characterized in that the diamond
Granule density is 300 ~ 450/mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721231687.5U CN207630298U (en) | 2017-09-25 | 2017-09-25 | A kind of ultra high efficiency multi-wire saw diamond wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721231687.5U CN207630298U (en) | 2017-09-25 | 2017-09-25 | A kind of ultra high efficiency multi-wire saw diamond wire |
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| CN207630298U true CN207630298U (en) | 2018-07-20 |
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| CN201721231687.5U Active CN207630298U (en) | 2017-09-25 | 2017-09-25 | A kind of ultra high efficiency multi-wire saw diamond wire |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110480530A (en) * | 2019-07-26 | 2019-11-22 | 扬州续笙新能源科技有限公司 | A kind of cutting silicon wafer self-sharpening diamond wire and its manufacturing method and application method |
| CN116900406A (en) * | 2023-09-12 | 2023-10-20 | 江苏聚成金刚石科技股份有限公司 | Superfine diameter diamond wire saw with low breakage rate and preparation method thereof |
-
2017
- 2017-09-25 CN CN201721231687.5U patent/CN207630298U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110480530A (en) * | 2019-07-26 | 2019-11-22 | 扬州续笙新能源科技有限公司 | A kind of cutting silicon wafer self-sharpening diamond wire and its manufacturing method and application method |
| CN116900406A (en) * | 2023-09-12 | 2023-10-20 | 江苏聚成金刚石科技股份有限公司 | Superfine diameter diamond wire saw with low breakage rate and preparation method thereof |
| CN116900406B (en) * | 2023-09-12 | 2023-12-05 | 江苏聚成金刚石科技股份有限公司 | Superfine diameter diamond wire saw and preparation method thereof |
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