CN106217665B - A kind of method of extra-fine steel wire cutting ultra thin silicon wafers - Google Patents
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract
The present invention relates to a kind of methods of extra-fine steel wire cutting ultra thin silicon wafers, include the following steps：(1) main shaft is slotted, (2) sticky stick, and (3) configure coolant liquid, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；The step (3) configures coolant liquid, and coolant liquid is pure water and water base cutting liquid, cutting liquid a concentration of 0.6%~2.0%；Step (4) cutting cuts rigid line and uses 60um diamond wires, diamond particles that diameter 6~8um particles, tension is used to set 7~9N, and main shaft slot pitch is 0.190~0.210mm.The present invention, which further decreases, to be improved single-crystal wafer piece rate, reduces slice thickness, is reduced silicon consume, is reduced processing cost, while can reduce wire broken rate, improves yields, prevent doubling.
Description
Technical field
The present invention relates to silicon chip cutting technique, especially one kind further decreasing slice thickness, reduces silicon consume, reduces and add
The method of the extra-fine steel wire cutting ultra thin silicon wafers of work cost.
Background technology
The production of crystal silicon solar component includes crystal silicon production, and ingot casting/crystal pulling, slice, cell piece produces and component production, by
In silicon wafer thickness on the photoelectric conversion efficiency of solar cell without influence, therefore improves silicon materials utilization rate and add as silicon chip is reduced
One of the important channel of work cost.Wherein slice link is the process for thinly slicing silicon ingot, and slice is the height by wire
Speed moves back and forth and brings SIC abrasive materials into machining area (silicon rod) and be ground, and diamond wire is by electroplating technology by diamond dust
It is attached on steel wire and is cut.Cut compared to traditional mortar, the advantage of Buddha's warrior attendant wire cutting be its cutting speed can promote 2~
3 times, without using expensive and reluctant mortar, monolithic consumptive material is relatively low, and diamond wire can be cut compared with thin silicon wafer, be dropped significantly
Low silicon consumption, improve silicon chip in Unit Weight goes out the piece number, there is very big space on cost reduction.
To reduce cost, it is effective method to reduce silicon wafer thickness, but the rigid silk of cutting is meticulous to will produce problem：In rigid silk
In production process, busbar line footpath is smaller to be more difficult to wire drawing, and wire broken rate is higher, and yields is lower；Rigid silk thread diameter is got in cutting process
Small, required tension is smaller when cutting, requires the tension control system of cutting equipment higher；Busbar line footpath is thinner, is cutting through
Rigid silk cutting power can be impacted in journey, and fracture of wire relative risk can increase；Rigid silk is thinner, and main shaft slot pitch is smaller, between rigid silk between
Away from smaller, under the action of cooling water, rigid line can be easier and to together, temperature promotion can suitably reduce liquid surface
Power, but temperature promotion can influence cutting fluid cooling performance etc..
Application number 201410614676.X, application publication number CN104441281A, data of publication of application 2015.03.25
Patent of invention disclose " a kind of cutting method of ultra thin silicon wafers " comprising following steps：Sticky stick；Prepare coolant liquid；Feeding；
Cutting preheating；Cutting；Blanking；It is characterized in that, the step prepares coolant liquid：Coolant liquid is that 1~5 μ s/cm are gone by conductivity
Ionized water and Water Soluble Cooling Liquid mixed preparing form, and the volume by volume concentration of the coolant liquid being configured to is 0.15%~
0.2%；The step cutting：Cutting steel wire uses wire core diameter for 70~80 μm, the plating Buddha's warrior attendant that grain diameter is 7~9 μm
Line；Set 120~140 μm of silicon chip target thickness, multi-wire cutting machine home roll wiring groove is away from 205~215 μm, 280~300 μ of groove depth
M, 25 °~35 ° of slot angle；The cutting steel wire tension is set as 20~22N, and monolithic line amount is 0.7~1.0m/pcs, and master cuts
It is 1~1.2mm/min to cut speed, carries out Double Directional Cutting；In entire cutting process, ensure that the coolant rate is stablized 180
~220L/min；The step blanking：After the completion of cutting, feeding station is risen at a slow speed with 30~40mm/min, and feeding station rises completely
After rising, blanking carries out silicon wafer stripping processing.The piece rate that the patent promotes single-crystal wafer carries to reduce silicon chip processing cost
High cutting efficiency, optimizing surface roughness reduce TTV (silicon wafer thickness variable quantity).For further increase single-crystal wafer piece rate,
Slice thickness is reduced, silicon consume is reduced, reduces processing cost, need to be improved the prior art.
Invention content
The object of the present invention is to provide one kind further increasing single-crystal wafer piece rate, reduces slice thickness, reduces silicon consumption
Damage, the method for reducing the extra-fine steel wire cutting ultra thin silicon wafers of processing cost.
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers, includes the following steps：(1) main shaft is slotted, and (2) sticky stick, (3) match
Coolant liquid is set, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；
The step (3) configures coolant liquid, and coolant liquid is pure water and water base cutting liquid, and cutting liquid a concentration of 0.6%~
2.0%；
Step (4) cutting, cuts rigid line and 60um diamond wires, diamond particles is used to use diameter 6~8um
Grain, tension set 7~9N, main shaft slot pitch be 0.190~0.210mm, cutting sheet thickness be 115~135um, 20 °~24 ° of groove angle,
0.2~0.28mm of groove depth, 1.1~1.3mm/min of main body cutting speed carry out Double Directional Cutting.
Step (4) cutting, slot bottom width 55um.
Step (4) cutting, linear velocity 1600m/min.
Step (4) cutting, cutting sheet thickness are 115um.
The step (3) configures coolant liquid, and coolant liquid is pure water and water base cutting liquid, and cutting liquid is French Saint-Gobain, is cut
Cut a concentration of 0.6%-2.0% of liquid；Step (4) cutting, cuts rigid line and uses 60um diamond wires, what diamond particles used
It is diameter 6um particles, silicon wafer thickness sets 130um, and main shaft slot pitch uses 0.210mm, and 24 °, groove depth 0.28mm of groove angle, slot bottom is wide
Spend 55um；Tension sets 8N, linear velocity 1600m/min, and main body cutting speed 1.3mm/min carries out Double Directional Cutting.
The step (3) configures coolant liquid cutting liquid a concentration of 2.0%, and step (4) cutting is cut rigid line and used
60um diamond wires, diamond particles use diameter 6um particles, silicon wafer thickness to set 115um, and main shaft slot pitch is 0.19mm,
24 °, groove depth 0.28mm, slot bottom width 55um of groove angle；Tension sets 8N, linear velocity 1600m/min, main body cutting speed
1.3mm/min carries out Double Directional Cutting.
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers of the present invention, includes the following steps：(1) main shaft is slotted, and (2) are viscous
Stick, (3) configure coolant liquid, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；The step (3) configures coolant liquid, cold
But liquid is pure water and water base cutting liquid, cutting liquid a concentration of 0.6%~2.0%；Step (4) cutting, cuts rigid line and uses
60um diamond wires, diamond particles use diameter 6~8um particles, and tension sets 7~9N, and main shaft slot pitch is 0.190~
0.210mm, cutting sheet thickness be 115~135um, 20 °~24 °, 0.2~0.28mm of groove depth of groove angle, main body cutting speed 1.1~
1.3mm/min carries out Double Directional Cutting.Make to cut silicon chip under 60um diamond wire Optimal States, reduces the internal diameter of diamond wire, adjust simultaneously
Small tension receiving coil improves coolant liquid concentration, prevents the meticulous wire broken rate brought of diamond wire high, yields is low, doubling problem.The present invention into
One step, which reduces, to be improved single-crystal wafer piece rate, reduces slice thickness, is reduced silicon consume, is reduced processing cost, while can reduce
Wire broken rate improves yields, prevents doubling.
Specific implementation mode
Below in conjunction with specific embodiment, the present invention will be further described.
Embodiment 1：
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers, includes the following steps：(1) main shaft is slotted, and (2) sticky stick, (3) match
Coolant liquid is set, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；The step (3) configures coolant liquid, and coolant liquid is pure
Water and water base cutting liquid, cutting liquid a concentration of 2.0%；Step (4) cutting, cuts rigid line and uses 60um diamond wires, Buddha's warrior attendant
It is 0.19mm that stone particle, which uses diameter 6um particles, main shaft slot pitch, and cutting sheet thickness is 115um, 24 ° of groove angle, groove depth
0.28mm, main body cutting speed 1.3mm/min carry out Double Directional Cutting.Slot bottom width 55um.Linear velocity is 1600m/min.
It is 5N, 6N, 7N that tension, which is set separately, and 8N, 9N, when 10N, tension is bigger, and breakage ratio is higher, and tension is smaller, cutting
Efficiency is lower, with tension be 8N when best results.
Diamond wire is thinner, and cost is lower, and silicon consumable quantity is smaller, and surface roughness is smaller, and the thickness of silicon chip can be with smaller.But
It is the requirement higher of tension force, cutting liquid concentration needs to adjust.Domestic no supplier can provide 60um diamond wires at present,
External producer can largely supply, but price is slightly higher；TV600 slicers tension system can meet the rigid silks of 60um to the peace used forever
Required tension force, TV600 cutting equipment highest linear speeds 1600m/min can make up the smaller caused cutting power of line footpath
The defect of decrease；Using French Saint-Gobain's coolant liquid, required liquid surface under the cutting condition can be reached by increasing concentration
Tension.
It is 7N, 8N, 9N when tension is set separately, product testing data are：
| Tension (N) | Wire broken rate | Notch/angle | Flash | It is hidden to split | Silicon is fallen | Stria | Thickness | TTV | Yields |
| 7 | 2.40% | 1.5% | 0.4% | 1.0% | 1.2% | 0.0% | 0.9% | 0.8% | 90.2% |
| 8 | 2.20% | 1.4% | 0.5% | 0.8% | 1.2% | 0.0% | 0.1% | 0.2% | 91.8% |
| 9 | 2.60% | 1.6% | 0.3% | 0.7% | 1.4% | 0.1% | 0.1% | 0.1% | 90.7% |
Embodiment 2：
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers, includes the following steps：(1) main shaft is slotted, and (2) sticky stick, (3) match
Coolant liquid is set, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；The step (3) configures coolant liquid, and coolant liquid is pure
Water and water base cutting liquid；Step (4) cutting, cuts rigid line and 60um diamond wires, diamond particles is used to use diameter
6um particles, tension 8N, main shaft slot pitch are 0.19mm, and cutting sheet thickness is 115um, 24 °, groove depth 0.28mm of groove angle, main body cutting
Speed 1.3mm/min carries out Double Directional Cutting.Slot bottom width 55um.Linear velocity is 1600m/min.
Cutting liquid concentration is respectively 0.3%, 0.6%, 1%, 1.3%, 1.6%, 2.0%, wherein concentration 0.6%~
2.0% effect is preferable, and cutting liquid concentration increase advantageously accounts for doubling problem, but excessive concentration can increase cost, increases cutting
The viscosity of liquid is unfavorable for cutting.
The thinner effect of diamond particles is better, but is constrained to prior art means, the composite factors such as cost.
Cutting liquid concentration is respectively 0.3%, and parameter is when 0.6%, 1%, 1.3%, 1.6%, 2.0%：
| Cutting liquid concentration | Notch/angle | Flash | It is hidden to split | Silicon is fallen | Stria | Thickness | TTV | Yields |
| 0.30% | 1.5% | 0.4% | 1.0% | 1.2% | 0.0% | 15.0% | 25.0% | 49.4% |
| 0.60% | 1.4% | 0.5% | 0.8% | 1.2% | 0.0% | 0.4% | 0.6% | 89.8% |
| 1.00% | 1.6% | 0.3% | 0.7% | 1.4% | 0.1% | 0.1% | 0.1% | 92.0% |
| 1.30% | 1.4% | 0.5% | 0.9% | 1.3% | 0.0% | 0.0% | 0.0% | 92.5% |
| 1.60% | 1.7% | 0.4% | 1.0% | 1.1% | 0.1% | 0.1% | 0.0% | 92.2% |
| 2.00% | 1.7% | 0.5% | 0.8% | 1.2% | 0.1% | 0.0% | 0.0% | 91.9% |
Embodiment 3：
A kind of method of extra-fine steel wire cutting ultra thin silicon wafers, includes the following steps：(1) main shaft is slotted, and (2) sticky stick, (3) match
Coolant liquid is set, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；The step (3) configures coolant liquid, and coolant liquid is pure
Water and water base cutting liquid；The step (4) cutting, the rigid lines of 60um, diamond particles use the diameter 6um particles, tension to be
8N, cutting liquid a concentration of 2%, main shaft slot pitch are 0.21mm, and cutting sheet thickness is 130um, and 24 ° of groove angle, groove depth 0.28mm, main body is cut
It cuts speed 1.3mm/min and carries out Double Directional Cutting.Slot bottom width 55um.Linear velocity is 1600m/min.
Rigid line will be cut to compare with the cutting of 70um, 80um diamond wire using the case where 60um, the wherein cutting of 60um
Cost is minimum, income highest, and silicon consumption is minimum, and comprehensive benefit is best, compared to 70um, 80um diamond wire, is more suitable for cutting
Thinner silicon chip.
Cutting sheet thickness 130um, use the parameter of 60um, 70um, 80um diamond wire to compare for：
The basic principles, main features and advantages of the invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe the originals of the present invention
Reason, various changes and improvements may be made to the invention without departing from the spirit and scope of the present invention, these changes and improvements
It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent circle
It is fixed.
Claims (3)
1. a kind of method of extra-fine steel wire cutting ultra thin silicon wafers, which is characterized in that include the following steps：(1) main shaft is slotted, (2)
Sticky stick, (3) configure coolant liquid, (4) cutting, (5) blanking, (6) degumming cleaning, (7) detection；
The step (3) configures coolant liquid, and coolant liquid is pure water and water base cutting liquid, cutting liquid a concentration of 0.6%~2.0%；
Step (4) cutting, cuts rigid line and 60um diamond wires, diamond particles is used to use diameter 6~8um particles,
Tension set 7~9N, main shaft slot pitch be 0.190~0.210mm, cutting sheet thickness be 115um, 20 °~24 ° of groove angle, groove depth 0.2~
0.28mm, 1.1~1.3mm/min of main body cutting speed carry out Double Directional Cutting；
Step (4) cutting, slot bottom width 55um；
Step (4) cutting, linear velocity 1600m/min.
2. a kind of method of extra-fine steel wire cutting ultra thin silicon wafers according to claim 1, which is characterized in that the step
(3) coolant liquid is configured, coolant liquid is pure water and water base cutting liquid, and cutting liquid is French Saint-Gobain, a concentration of 0.6%- of cutting liquid
2.0%；
Step (4) cutting, cuts rigid line and 60um diamond wires, diamond particles is used to use diameter 6um particles, silicon chip
Thickness sets 130um, and main shaft slot pitch uses 0.210mm, 24 °, groove depth 0.28mm, slot bottom width 55um of groove angle；Tension sets 8N,
Linear velocity is 1600m/min, and main body cutting speed 1.3mm/min carries out Double Directional Cutting.
3. a kind of method of extra-fine steel wire cutting ultra thin silicon wafers according to claim 1, which is characterized in that the step
(3) coolant liquid cutting liquid a concentration of 2.0% is configured,
Step (4) cutting, cuts rigid line and 60um diamond wires, diamond particles is used to use diameter 6um particles, silicon chip
Thickness sets 115um, and main shaft slot pitch is 0.19mm, 24 °, groove depth 0.28mm, slot bottom width 55um of groove angle；Tension sets 8N, line
Speed is 1600m/min, and main body cutting speed 1.3mm/min carries out Double Directional Cutting.
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| JP2002103324A (en) * | 2000-09-27 | 2002-04-09 | Hitachi Metals Ltd | Method for cutting ceramic honeycomb extrusion molded object |
| JP2004009238A (en) * | 2002-06-10 | 2004-01-15 | Kanai Hiroaki | Saw wire manufacturing method and saw wire |
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| CN104441281B (en) * | 2014-10-31 | 2016-08-31 | 内蒙古中环光伏材料有限公司 | A kind of cutting method of ultra thin silicon wafers |
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