CN102248612A - Ultrathin monocrystalline silicon wafer and linear cutting device and cutting method for making same - Google Patents
Ultrathin monocrystalline silicon wafer and linear cutting device and cutting method for making same Download PDFInfo
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- CN102248612A CN102248612A CN2011102101840A CN201110210184A CN102248612A CN 102248612 A CN102248612 A CN 102248612A CN 2011102101840 A CN2011102101840 A CN 2011102101840A CN 201110210184 A CN201110210184 A CN 201110210184A CN 102248612 A CN102248612 A CN 102248612A
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Abstract
The invention relates to an ultrathin monocrystalline silicon wafer, of which the thickness is 180+/-20 micrometers. A linear cutting device has a cutting wire and a driving roll, wherein a wireway is formed on the driving roll and is matched with the cutting wire; the width of the notch of the wireway is 0.31 to 0.32 millimeters; and the diameter of the cutting wire is 0.10 to 0.11 millimeters. In a method for cutting the silicon wafer, the width of the notch of the wireway is designed to be 0.31 to 0.32 millimeters, the diameter of the cutting wire is 0.10 to 0.11 millimeters, the linear speed of the cutting wire is controlled to be 9.4 to 10.4m/s, the pressing speed of a silicon ingot is set to be not more than 0.3 millimeter per second and a cutting liquid flow is set to be 80 to 90L/min. In the invention, the width of the notch is increased, more monocrystalline silicon wafers can be made by using a unit amount of silicon ingot, the productivity is increased, and the loss is reduced; and by controlling technical parameters such as cutting speed, the stability in a cutting process is guaranteed and the breakage rate is lowered.
Description
Technical field
The present invention relates to area of solar cell, particularly a kind of ultra thin single crystalline silicon chip and the wire-electrode cutting device and the cutting method of making this silicon chip.
Background technology
Monocrystalline silicon at room temperature belongs to crisp hard material, has only when temperature is not less than 0.5Tm and just has elastoplasticity when (Tm refers to the melting temperature of silicon), even under external force, also is difficult under the silicon chip normal temperature produce dislocation or dislocation movement by slip takes place.But, because the shearing stress of silicon single crystal is much smaller than tension stress, therefore in process such as section, grinding and machine glazed finish, silicon chip bearing can produce under the big shear stress condition broken, thereby influence the silicon chip yield rate.After the complicated heat treatment process of experience element manufacturing, be easy to generate thermal stress in the wafer bulk, may cause warpage takes place and reduce the litho pattern alignment precision, break or collapse the limit thereby also may induce out dislocation and other faults of construction.Along with the continuous ever-larger diameters of silicon single crystal flake, thermal stress of Zeng Jiaing and gravity make above-mentioned situation more become serious day by day.At present, in extensive device production process, people often improve its mechanical strength to guarantee the yield rate of silicon chip and device by the thickness that increases silicon chip.But this method will improve manufacturing cost, reduce production capacity.
The monocrystaline silicon solar cell conversion efficiency is the highest, and technology is also ripe.Under lab the highest conversion efficiency is 24.7%, and the efficient during large-scale production is 15%, dominate still in large-scale application and industrial production.Because monocrystalline silicon cost price height, and in current solar cell market, used for solar batteries monocrystalline silicon enterprise utilization of capacity less than 50% obviously can not satisfy load production.In order to save silicon materials,, now generally require sheet thick and be 200 ± 20 μ m,, still have the space of improvement though silicon wafer thickness is very thin in the manufacturing field of monocrystalline silicon chip of solar cell.
Summary of the invention
The technical problem to be solved in the present invention is: in order to save manufacturing cost, to improve production capacity, the invention provides a kind of method of cutting ultra thin monocrystalline silicon piece.
The technical solution adopted for the present invention to solve the technical problems is: a kind of ultra thin single crystalline silicon chip, silicon wafer thickness are 180 ± 20 μ m.
A kind of wire-electrode cutting device of making described ultra thin single crystalline silicon chip, have line of cut, drive roll and driven voller, all has independent separately uniform wire casing on drive roll and the driven voller, described wire casing matches with line of cut, the width of rebate of wire casing is 0.31mm-0.32mm, and the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm.
A kind of method of cutting described ultra thin single crystalline silicon chip, use the solar silicon wafers wire cutting machine that monocrystal silicon is carried out the line cutting, have line of cut, drive roll and driven voller on the solar silicon wafers wire cutting machine, all has independent separately uniform wire casing on drive roll and the driven voller, described wire casing matches with line of cut, comprises following steps:
(a) width of rebate of wire casing is set to 0.31mm-0.32mm, and the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm, makes thick 180 ± 20 μ m that are controlled at of sheet;
(b) to make the linear velocity of line of cut be 9.4m/s-10.4m/s to the rotating speed of control main line roller, and the speed of pressing down that silicon ingot is set is no more than 0.3mm/s, and the flow of cutting fluid is 80-90L/min.
In order to guarantee cutting effect, described cutting fluid comprises carborundum powder and mortar, and the storage temperature of cutting fluid is 25 ℃, and humidity is controlled in 60%.
The invention has the beneficial effects as follows a kind of ultra thin single crystalline silicon chip of the present invention and the wire-electrode cutting device and the cutting method of making this silicon chip, the width of improvement notch, be implemented in the setting of wiring process, can the more monocrystalline silicon piece of output on the unit silicon ingot, improved production capacity, also reduced loss simultaneously; By technological parameters such as control cutting speeds, guaranteed the stable of cutting process and reduced fragment rate.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the structural representation of the optimum embodiment of main line roller of wire-electrode cutting device among the present invention.
Among the figure 1, the main line roller, 1-1, wire casing.
The specific embodiment
In conjunction with the accompanying drawings, the present invention is further detailed explanation.These accompanying drawings are the schematic diagram of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
A kind of ultra thin single crystalline silicon chip of the present invention, silicon wafer thickness are 180 ± 20 μ m.
A kind of wire-electrode cutting device of making described ultra thin single crystalline silicon chip of the present invention, have line of cut, drive roll 1 and driven voller, all has independent separately uniform wire casing 1-1 on drive roll 1 and the driven voller, wire casing 1-1 matches with line of cut, the width of rebate of wire casing 1-1 is 0.31mm-0.32mm, and the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm.
The method of a kind of cutting ultra thin monocrystalline silicon piece of the present invention, use the solar silicon wafers wire cutting machine that monocrystal silicon is carried out the line cutting, have line of cut, drive roll 1 and driven voller on the solar silicon wafers wire cutting machine, all has independent separately uniform wire casing 1-1 on drive roll 1 and the driven voller, wire casing 1-1 matches with line of cut, comprises following steps:
(a) width of rebate of wire casing 1-1 is set to 0.31mm-0.32mm, the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm, driving wheel 1 rotates synchronously with driven pulley, drive the cylindrical rotation of line of cut along driving wheel and driven pulley, along with moving of line of cut, silicon ingot will be cut, can be with thick 180 ± 20 μ m that are controlled at of sheet by the diameter that width of rebate and line of cut are set;
(b) in order to guarantee the stable of cutting process and to reduce fragment rate, it is 9.4m/s-10.4m/s that the rotating speed of control main line roller 1 makes the linear velocity of line of cut, the speed of pressing down that silicon ingot is set is no more than 0.3mm/s, the flow of cutting fluid is 80-90L/min, cutting fluid comprises carborundum powder and mortar, the storage temperature of cutting fluid is 25 ℃, and humidity is controlled in 60%.
Corresponding technological parameter is set to:
Maximum speed limit: 720m/min;
Average speed limit: 560-580m/min;
The speed of table: 0.3-0.35mm/min;
Steel wire tension force: 18-19N;
The ew line amount of feeding: 250m/min;
Cutting line amount: 140-150km/ cutter.
The theoretical piece rate of monocrystalline silicon depends primarily on the size of drive roll width of rebate, and actual slice will depend on the setting of every data of technological parameter, only effectively controls and combination, just can reach an actual efficiently piece rate.Adopt method of the present invention, piece rate can be controlled at 93%～95% A product rate.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (4)
1. ultra thin single crystalline silicon chip, it is characterized in that: silicon wafer thickness is 180 ± 20 μ m.
2. wire-electrode cutting device of making ultra thin single crystalline silicon chip as claimed in claim 1, it is characterized in that: have line of cut, drive roll (1) and driven voller, all has independent separately uniform wire casing (1-1) on drive roll (1) and the driven voller, described wire casing (1-1) matches with line of cut, the width of rebate of wire casing (1-1) is 0.31mm-0.32mm, and the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm.
3. produce the method for a kind of cutting ultra thin monocrystalline silicon piece as claimed in claim 1 or 2, use the solar silicon wafers wire cutting machine that monocrystal silicon is carried out the line cutting, have line of cut, drive roll (1) and driven voller on the solar silicon wafers wire cutting machine, all has independent separately uniform wire casing (1-1) on drive roll (1) and the driven voller, described wire casing (1-1) matches with line of cut, it is characterized in that comprising following steps:
(a) width of rebate of wire casing (1-1) is set to 0.31mm-0.32mm, and the diameter that is used to cut the line of cut of silicon chip is 0.10mm-0.11mm, makes thick 180 ± 20 μ m that are controlled at of sheet;
(b) to make the linear velocity of line of cut be 9.4m/s-10.4m/s to the rotating speed of control main line roller (1), and the speed of pressing down that silicon ingot is set is no more than 0.3mm/s, and the flow of cutting fluid is 80-90L/min.
4. the method for a kind of cutting ultra thin monocrystalline silicon piece as claimed in claim 3 is characterized in that: described cutting fluid comprises carborundum powder and mortar, and the storage temperature of cutting fluid is 25 ℃, and humidity is controlled in 60%.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102837371A (en) * | 2012-08-20 | 2012-12-26 | 安阳市凤凰光伏科技有限公司 | Cost-reducing method for HCT slicing |
| CN103847032A (en) * | 2014-03-20 | 2014-06-11 | 德清晶辉光电科技有限公司 | Production process of large-diameter ultrathin quartz wafer |
| CN104191533A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon wafer reciprocating cutting technology |
| CN106217665A (en) * | 2016-08-12 | 2016-12-14 | 上海申和热磁电子有限公司 | A kind of method of ultra-fine steel wire cutting ultra thin silicon wafers |
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| CN101745864A (en) * | 2009-12-29 | 2010-06-23 | 洛阳神合电子科技有限责任公司 | Silicon slice linear cutter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102837371A (en) * | 2012-08-20 | 2012-12-26 | 安阳市凤凰光伏科技有限公司 | Cost-reducing method for HCT slicing |
| CN103847032A (en) * | 2014-03-20 | 2014-06-11 | 德清晶辉光电科技有限公司 | Production process of large-diameter ultrathin quartz wafer |
| CN103847032B (en) * | 2014-03-20 | 2016-01-06 | 德清晶辉光电科技有限公司 | The production technology of the ultra-thin quartz wafer of a kind of major diameter |
| CN104191533A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon wafer reciprocating cutting technology |
| CN106217665A (en) * | 2016-08-12 | 2016-12-14 | 上海申和热磁电子有限公司 | A kind of method of ultra-fine steel wire cutting ultra thin silicon wafers |
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Application publication date: 20111123 |