CN202053389U - Wire cutting device - Google Patents
Wire cutting device Download PDFInfo
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- CN202053389U CN202053389U CN2011200563215U CN201120056321U CN202053389U CN 202053389 U CN202053389 U CN 202053389U CN 2011200563215 U CN2011200563215 U CN 2011200563215U CN 201120056321 U CN201120056321 U CN 201120056321U CN 202053389 U CN202053389 U CN 202053389U
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- cutting
- wire
- cut
- idler wheels
- line
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Abstract
The utility model discloses a wire cutting device which comprises an operating platform, a cutting wire, two wire-guiding idler wheels, two liquid sprayers and a motor. The motor is used for driving the wire-guiding idler wheels; the two wire-guiding idler wheels are arranged in parallel; the cutting wire is wound on the two wire-guiding idler wheels parallelly, thereby forming a cutting net; the operating platform is arranged above the cutting wire; and the liquid sprayers are arranged above the wire-guiding idler wheels. The wire cutting device has the advantages that the cutting speed is promoted, the cutting efficiency is greatly promoted, the diameter of the cutting wire is reduced, much more silicon sheets can be produced under the condition of same silicon block length, the loss of silicon materials is reduced, the loss of section is reduced and the production cost of solar energy industry is lowered.
Description
Technical field
The utility model relates to a kind of cutter sweep, in particular a kind of wire-electrode cutting device.
Background technology
Have relatively high expectations when hard materials such as quartz, monocrystalline silicon, polysilicon carry out the precision cutting, knife saw sheet, grinding wheel, laser cutting and interior circle cutting etc. can not be satisfied the requirement of hard material to cutting technique.Crystal silicon solar energy battery is the main flow of present solar cell, in the whole industry chain, the cutting cost of solar silicon wafers accounts for about 30% of total manufacturing cost, the quality of cutting technique not only influences the piece rate of silicon chip, more can have influence on the surface quality of silicon chip and the processing capacity and the complexity of subsequent technique.Be cut into example with traditional interior circle, the utilization rate of material only is about 40%-50%, and simultaneously because structural limitations, interior round cutting can't be processed the silicon chip of the above big-and-middle diameter of 200mm, along with the increase of silicon wafer diameter, the damage layer of silicon chip surface is strengthened.Therefore advanced cutting technique and cutting equipment have very important significance and using value to promoting the solar energy power generating industry.
The working (machining) efficiency and the crudy of silicon chip cutting directly have influence on whole silicon wafer production.Requirement for slice process is: cutting accuracy height, surperficial depth of parallelism height, angularity and thickness deviation are little; The section integrality is good, eliminates wire drawing, tool marks and micro-crack; Improve yield rate, reduce the raw material loss; Improve cutting speed, realize the automation cutting.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of wire-electrode cutting device is provided, and cuts liquid by the line of cut drive of high-speed motion hard brittle material is carried out friction cuttings.
Technical scheme: the utility model comprises work stage, line of cut, two lead rollers, bubbler and motors; Wherein: motor-driven lead roller, two lead rollers be arranged in parallel, the line of cut wound in parallel on two lead rollers, form the cutting net, work stage is positioned at the top of line of cut, bubbler be arranged at the lead roller above.
Described line of cut diameter is 0.05mm-0.3mm.
Principle of the present utility model is that the steel wire by high-speed motion drives and attached to the cutting blade material on the steel wire hard brittle material that is cut rubbed, thereby reaches a kind of cutting method that crisp and hard material once is cut into simultaneously thousands of thin slices.
Beneficial effect: the utility model has the following advantages compared to existing technology, and the utility model has been accelerated the speed of section, has greatly improved the efficient of section; Reduce the diameter of line of cut, can under same silico briquette length, produce more silicon chip, reduce the loss of silicon material, reduce kerf loss, reduce the production cost of solar energy industry.
Description of drawings
Fig. 1 is a structural representation of the present utility model.
The specific embodiment
Below embodiment of the present utility model is elaborated; present embodiment is being to implement under the prerequisite with technical solutions of the utility model; provided detailed embodiment and concrete operating process, but protection domain of the present utility model is not limited to following embodiment.
As shown in Figure 1, present embodiment comprises work stage 1, silico briquette 2, line of cut 3, two lead rollers 4, bubbler 5 and motor (not shown); Wherein: motor-driven lead roller 4, two lead rollers 4 be arranged in parallel, and line of cut 3 wound in parallel form the cutting net on two lead rollers 4, and work stage 1 is positioned at the top of line of cut 3, silico briquette 2 is fixed on the work stage 1, bubbler 5 be arranged at lead roller 4 above.
After parallel line of cut 3 on the lead roller 4 was wrapped with by reel 6 a lot oves, motor-driven lead roller 4 made whole cutting net move with the speed of 5 meters to 25 meters of per seconds.In line of cut 3 motion processes, nozzle on the bubbler 5 can continue to spray the cutting liquid that contains the suspended carbon silicon carbide particle to line of cut 3, silico briquette 2 is fixed on the work stage 1, and work stage 1 is down motion vertically, and silico briquette 2 vertically passes the cutting net of line of cut 3 compositions and is cut into silicon chip.
Line of cut 3 is processed into by the steel wire drawing, and the diameter of line of cut 3 is 0.1mm, can regulate according to practical condition, selects the line of cut 3 of different-diameter for use.Because wire-electrode cutting device can carry out unidirectional cabling and two-way cabling as requested.During unidirectional cabling, steel wire remains a speed operation.During two-way cabling, line of cut 3 speed begin by accelerating to fixing speed along a direction with time of 2-3 second zero point, after operation a period of time, slowly be reduced to zero point along former direction again, after pausing 0.2 second zero point, oppositely accelerate to the speed of regulation more at leisure, again along the cycle cutting process that slowly is reduced to zero point in the other direction.In the process of two-way cutting, the cutting power of wire-electrode cutting device improves and improves along with the speed of line of cut 3 within the specific limits, but can not be lower than or surpass the cutting power of cutting liquid.If be lower than the cutting power of cutting liquid, stria sheet even broken string will occur; Otherwise, if exceed the cutting power that cuts liquid, just may cause cutting flow quantity and not catch up with, thereby thickness sheet even stria sheet etc. occur.
In whole cutting process, the viscosity, grain type and granularity, the viscosity of mortar, the flow of mortar, the speed of line of cut 3, the tension force of cutting and the feed speed of workpiece etc. of silicon carbide micro-powder of cutting liquid are all to the quality and the yield rate generation effect of silicon chip.
Claims (2)
1. a wire-electrode cutting device is characterized in that, comprises work stage (1), line of cut (3), two lead rollers (4), bubbler (5) and motor; Wherein: motor-driven lead roller (4), two lead rollers (4) be arranged in parallel, line of cut (3) wound in parallel go up to form the cutting net at two lead rollers (4), and work stage (1) is positioned at the top of line of cut (3), bubbler (5) be arranged at lead roller (4) above.
2. wire-electrode cutting device according to claim 1 is characterized in that: described line of cut (3) diameter is 0.05mm-0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200563215U CN202053389U (en) | 2011-03-07 | 2011-03-07 | Wire cutting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200563215U CN202053389U (en) | 2011-03-07 | 2011-03-07 | Wire cutting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202053389U true CN202053389U (en) | 2011-11-30 |
Family
ID=45013374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200563215U Expired - Fee Related CN202053389U (en) | 2011-03-07 | 2011-03-07 | Wire cutting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202053389U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544240A (en) * | 2012-03-09 | 2012-07-04 | 润峰电力有限公司 | Method and device for integrating slicing and flocking of crystalline silicon wafer |
| CN102837371A (en) * | 2012-08-20 | 2012-12-26 | 安阳市凤凰光伏科技有限公司 | Cost-reducing method for HCT slicing |
| CN103372920A (en) * | 2012-04-13 | 2013-10-30 | 东京制纲株式会社 | Wire-type cutting device |
| CN106217665A (en) * | 2016-08-12 | 2016-12-14 | 上海申和热磁电子有限公司 | A kind of method of ultra-fine steel wire cutting ultra thin silicon wafers |
| CN107214869A (en) * | 2017-07-20 | 2017-09-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN108789889A (en) * | 2018-07-26 | 2018-11-13 | 苏州润桐专利运营有限公司 | A kind of monocrystalline silicon Buddha's warrior attendant wire-electrode cutting device |
| CN109732796A (en) * | 2019-01-30 | 2019-05-10 | 无锡中环应用材料有限公司 | A kind of cutting method of monocrystalline silicon piece |
-
2011
- 2011-03-07 CN CN2011200563215U patent/CN202053389U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544240A (en) * | 2012-03-09 | 2012-07-04 | 润峰电力有限公司 | Method and device for integrating slicing and flocking of crystalline silicon wafer |
| CN103372920A (en) * | 2012-04-13 | 2013-10-30 | 东京制纲株式会社 | Wire-type cutting device |
| CN102837371A (en) * | 2012-08-20 | 2012-12-26 | 安阳市凤凰光伏科技有限公司 | Cost-reducing method for HCT slicing |
| CN106217665A (en) * | 2016-08-12 | 2016-12-14 | 上海申和热磁电子有限公司 | A kind of method of ultra-fine steel wire cutting ultra thin silicon wafers |
| CN107214869A (en) * | 2017-07-20 | 2017-09-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN108789889A (en) * | 2018-07-26 | 2018-11-13 | 苏州润桐专利运营有限公司 | A kind of monocrystalline silicon Buddha's warrior attendant wire-electrode cutting device |
| CN108789889B (en) * | 2018-07-26 | 2020-10-27 | 浙江红绿蓝纺织印染有限公司 | Monocrystalline silicon buddha's warrior attendant wire cutting device |
| CN109732796A (en) * | 2019-01-30 | 2019-05-10 | 无锡中环应用材料有限公司 | A kind of cutting method of monocrystalline silicon piece |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SUNNYWELL (CHINA) NEW MATERIAL TECHNOLOGY CO., LTD Free format text: FORMER OWNER: ZHENJIANG NAISI ADVANCE MATERIALS CO., LTD. Effective date: 20120829 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 212134 ZHENJIANG, JIANGSU PROVINCE TO: 213200 CHANGZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120829 Address after: Two Jintan City, Jiangsu Province South Road 213200 No. 268 Patentee after: Sheng Li (China) new material technology Co., Ltd. Address before: 212134 Zhenjiang province Dagang New District photovoltaic industrial park, mountain road, No. 1 Patentee before: Zhejiang Weixing New Building Material Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Two Jintan City, Jiangsu Province South Road 213200 No. 268 Patentee after: Sheng Li (China) new material technology Limited by Share Ltd Address before: Two Jintan City, Jiangsu Province South Road 213200 No. 268 Patentee before: Sheng Li (China) new material technology Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111130 Termination date: 20190307 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |