CN114311355B - Production method of monocrystalline silicon wafer and monocrystalline silicon wafer - Google Patents
Production method of monocrystalline silicon wafer and monocrystalline silicon wafer Download PDFInfo
- Publication number
- CN114311355B CN114311355B CN202210245418.3A CN202210245418A CN114311355B CN 114311355 B CN114311355 B CN 114311355B CN 202210245418 A CN202210245418 A CN 202210245418A CN 114311355 B CN114311355 B CN 114311355B
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- piece
- wafer
- cutting
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 250
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 235000012431 wafers Nutrition 0.000 claims abstract description 154
- 238000005520 cutting process Methods 0.000 claims abstract description 111
- 239000010432 diamond Substances 0.000 claims abstract description 44
- 238000004140 cleaning Methods 0.000 claims abstract description 43
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 238000007664 blowing Methods 0.000 claims abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 14
- 238000005507 spraying Methods 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 48
- 239000004033 plastic Substances 0.000 claims description 37
- 238000001035 drying Methods 0.000 claims description 22
- 238000005192 partition Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 33
- 229910052710 silicon Inorganic materials 0.000 abstract description 33
- 239000010703 silicon Substances 0.000 abstract description 33
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003640 drug residue Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/02—Accessories specially adapted for use with machines or devices of the preceding groups for removing or laying dust, e.g. by spraying liquids; for cooling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a production method of a monocrystalline silicon piece and the monocrystalline silicon piece, which relate to the field of production and manufacturing of semiconductor silicon pieces and can produce the monocrystalline silicon piece with the thickness of less than 120 microns, so that the production cost of the silicon piece can be reduced. The specific scheme comprises the following steps: obtaining monocrystalline silicon, and fixing the monocrystalline silicon on a crystal support; one side that the brilliant support of control is fixed with monocrystalline silicon pushes down, utilizes cutting device to cut monocrystalline silicon, and cutting device includes: the diamond cutting line comprises diamond with the particle size range of 4-10 mu m, and the tension of the diamond cutting line is 4.7-5.7N; in the cutting process, the monocrystalline silicon is sprayed by using a spraying device, and the cutting device is cleaned by using a guide wheel blowing device; after the downward pressing cutting stroke is finished, controlling the crystal support to move upwards, and separating the monocrystalline silicon from the crystal support to obtain a plurality of monocrystalline silicon wafers; and inserting the monocrystalline silicon wafers into the flower basket one by one, and cleaning each monocrystalline silicon wafer to obtain a plurality of target monocrystalline silicon wafers.
Description
Technical Field
The invention relates to the field of production and manufacturing of semiconductor silicon wafers, in particular to a production method of a monocrystalline silicon wafer and the monocrystalline silicon wafer.
Background
The silicon chip is an important substrate material in the field of semiconductors, and at present, more than 90% of chips and sensors are manufactured on the basis of the silicon chip. The semiconductor silicon chip is positioned at the upstream of an integrated circuit industrial chain and plays an important industry foundation supporting role.
In the production of silicon wafers, the same silicon crystal bar is used for producing the silicon wafers, the thinner the produced silicon wafers are, the more the produced silicon wafers are, and the lower the production cost is, the thickness of the monocrystalline silicon wafers produced by the current silicon wafer production method is mainly 170 micrometers, 165 micrometers and 160 micrometers, and the production and manufacturing technology bottleneck exists for the monocrystalline silicon wafers with the thickness of below 120 micrometers.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention aims to provide a method for producing a monocrystalline silicon wafer and the monocrystalline silicon wafer, which can produce the monocrystalline silicon wafer with the thickness of less than 120 microns, thereby reducing the production cost of the silicon wafer.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect of embodiments of the present application, a method for producing a single crystal silicon wafer is provided, where the method includes:
obtaining monocrystalline silicon, and fixing the monocrystalline silicon on a crystal support;
controlling the crystal support to be fixed with one side of the monocrystalline silicon to be pressed downwards, and cutting the monocrystalline silicon by using a cutting device, wherein the cutting device comprises: the diamond cutting line comprises diamond with the particle size range of 4-10 mu m, and the tension of the diamond cutting line is 4.7-5.7N;
in the cutting process, a spraying device is used for spraying the monocrystalline silicon, and a guide wheel blowing device is used for cleaning the cutting device;
after the downward pressing cutting stroke is finished, controlling the crystal support to move upwards, and separating the monocrystalline silicon from the crystal support to obtain a plurality of monocrystalline silicon pieces;
and inserting the monocrystalline silicon wafers into a flower basket one by one, and cleaning each monocrystalline silicon wafer to obtain a plurality of target monocrystalline silicon wafers.
In one embodiment, when the crystal support is moved upwards, the cutting linear speed of a diamond cutting line of the cutting device is controlled to be 4-10 meters per minute, and the table speed of the monocrystalline silicon is controlled to be 10-50 millimeters per minute.
In one embodiment, when the single crystal silicon wafers are inserted into the flower basket piece by piece, the method comprises the following steps:
conveying the monocrystalline silicon wafers piece by piece to a flower basket, and moving the flower basket upwards step by step;
blowing a drying air flow to the monocrystalline silicon wafer in the conveying process of the monocrystalline silicon wafer, wherein the wind direction of the drying air flow and the conveying direction of the monocrystalline silicon wafer form a drying included angle which is an obtuse angle;
after the monocrystalline silicon piece is inserted into the flower basket, blowing jacking air flow to the monocrystalline silicon piece positioned on the lowest layer of the flower basket, wherein the wind direction of the jacking air flow and the inserting horizontal plane of the monocrystalline silicon piece in a partition plate of the flower basket form a jacking included angle, and the jacking included angle is an acute angle;
and the drying air flow and the jacking air flow respectively form air pressure of 0.2-0.3 MPa on the monocrystalline silicon piece.
In one embodiment, when the single crystal silicon wafers are inserted into the flower basket piece by piece, the method comprises the following steps:
and conveying the monocrystalline silicon wafers into the partition plates of the basket one by using a wafer arranging machine, moving the basket upwards step by step according to the wafer arranging speed of the wafer arranging machine so that each monocrystalline silicon wafer is inserted into one layer of partition plate, wherein the wafer arranging speed of the wafer arranging machine is 80-85 wafers per minute.
In one embodiment, the cleaning process for each of the monocrystalline silicon wafers comprises:
adding 7-8 liters of hydrogen peroxide and 80-120 grams of sodium hydroxide into a cleaning device;
putting the monocrystalline silicon pieces into the cleaning device in batches for cleaning, wherein the cleaning temperature is set as follows: setting the cleaning time to be at 40-45 ℃ as follows: 190-220 seconds.
In one embodiment, the method further comprises:
and when the number of the monocrystalline silicon wafers in the cleaning device is detected to be larger than a preset threshold value, adding 2-3 liters of hydrogen peroxide into the cleaning device.
In one embodiment, the crystal support comprises a plastic plate and a metal plate, the plastic plate is of a solid structure, the hardness of the plastic plate is 85-95 MPa, and the step of fixing the monocrystalline silicon on the crystal support comprises the following steps:
firstly, fixing a plastic plate on a metal plate, and then fixing the monocrystalline silicon on the plastic plate.
In one embodiment, when the plastic plate is fixed to the bottom surface of the metal plate and the single crystal silicon is fixed to the bottom surface of the plastic plate, the method comprises the following steps:
fixing the plastic plate on the metal plate by using an adhesive material, fixing the monocrystalline silicon on the plastic plate by using the adhesive material, wherein the adhesive material comprises a binder and a curing agent, and the ratio of the binder to the curing agent is 1.2-1.5: 1.
in one embodiment, the method further comprises:
extracting and detecting the plurality of target monocrystalline silicon wafers, and placing the target monocrystalline silicon wafers meeting the detection conditions in a preset container at a set placing speed; the extraction speed during extraction detection is 6800-7200 tablets/hour, and the set placing speed is as follows: 6000 to 7000 tablets/hour.
In a second aspect of the embodiments of the present application, a monocrystalline silicon wafer is also provided, which is produced by any one of the monocrystalline silicon wafer production methods in the first aspect of the embodiments of the present application.
The production method of monocrystalline silicon piece that this application embodiment provided is through obtaining monocrystalline silicon to on the monocrystalline silicon is fixed in the base plate, then control monocrystalline silicon and push down, utilize cutting device to cut monocrystalline silicon, wherein, cutting device includes: the diamond cutting line comprises diamonds with the particle size range of 4-10 mu m, the tension of the diamond cutting line is 4.7-5.7N, meanwhile, a spraying device is used for spraying monocrystalline silicon in the cutting process, a guide wheel blowing device is used for cleaning the cutting device, the monocrystalline silicon is controlled to move upwards after the cutting is finished, a plurality of cut monocrystalline silicon wafers are taken out of a crystal support and inserted into a flower basket piece by piece, and finally, the cleaning treatment is finished, so that a plurality of target monocrystalline silicon wafers are obtained. The production method of the monocrystalline silicon piece provided by the embodiment of the application, the monocrystalline silicon piece is cut through the cutting device, especially, the grain diameter of diamond on a diamond cutting line is controlled, the monocrystalline silicon piece with the small and uniform thickness can be cut out, meanwhile, the monocrystalline silicon piece is sprayed in the cutting process to prevent the cut monocrystalline silicon piece from being adhered, the cutting device is cleaned by the guide wheel blowing device to prevent impurities from being introduced in the cutting process, the cutting device is prevented from jumping and breaking, when the crystal support is moved upwards, the diamond cutting line is still kept to run at a certain linear speed, the speed of moving the monocrystalline silicon piece upwards is controlled, and the situation that the monocrystalline silicon piece is separated from the crystal support due to the fact that the linear speed is too large or the speed of the table is too fast in the moving process is avoided.
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a method for producing a single crystal silicon wafer according to an embodiment of the present invention.
FIG. 2 is a flow chart of another method for producing a single crystal silicon wafer according to an embodiment of the present invention.
FIG. 3 is a schematic structural diagram of a process of inserting monocrystalline silicon wafers into a basket one by one according to an embodiment of the present invention.
Reference numerals
1-a monocrystalline silicon wafer; 2-drying the gas flow; 3-jacking air flow;
4-a conveying device; 5-basket of flowers; 6-a separator.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, when it is described that a specific device is located between a first device and a second device, there may or may not be an intervening device between the specific device and the first device or the second device. When a particular device is described as being coupled to other devices, that particular device may be directly coupled to the other devices without intervening devices or may be directly coupled to the other devices with intervening devices.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
The silicon chip is an important substrate material in the field of semiconductors, and at present, more than 90% of chips and sensors are manufactured on the basis of the silicon chip. The semiconductor silicon chip is positioned at the upstream of an integrated circuit industrial chain and plays an important industry foundation supporting role.
The silicon wafer is produced by using the same silicon crystal bar in the silicon wafer production, the thinner the produced silicon wafer is, the more the produced silicon wafers are, and the lower the production cost is, and the thickness of the monocrystalline silicon wafer produced by the current silicon wafer production method is mainly 170 micrometers, 165 micrometers and 160 micrometers, and the monocrystalline silicon wafer with the thickness of less than 120 micrometers has a production technology bottleneck.
The main technical problems are that when a monocrystalline silicon wafer with the thickness of less than 120 microns is produced, the thickness of the silicon wafer is very thin, the monocrystalline silicon wafer is easy to damage by cutting in a conventional mode, the cutting quality is difficult to ensure, the thinner the silicon wafer is, the more difficult the uniformity of the silicon wafer is to ensure during cutting, the smaller the contact area of the thinner silicon wafer, which is connected with a crystal support after cutting, is, the more easy the silicon wafer is collided during withdrawing a wire, so that the silicon wafer falls off and is damaged, and the smaller the strength of the thin monocrystalline silicon wafer is, the more easy the thin monocrystalline silicon wafer is placed in a flower basket to deform, so that the problems of collision, damage and the like are easy to occur in the process of placing the monocrystalline silicon wafers piece by piece.
In order to solve the above problem, in a first aspect, as shown in fig. 1, embodiments of the present application provide a method for producing a single crystal silicon wafer, the method comprising the steps of:
step 101, obtaining monocrystalline silicon, and fixing the monocrystalline silicon on a crystal support;
102, controlling the side, fixed with the monocrystalline silicon, of the crystal support to be pressed downwards, and cutting the monocrystalline silicon by using a cutting device;
103, spraying the monocrystalline silicon by using a spraying device in the cutting process, and cleaning the cutting device by using a guide wheel blowing device;
104, after the downward pressing cutting stroke is finished, controlling the crystal support to move upwards, and separating the monocrystalline silicon from the crystal support to obtain a plurality of monocrystalline silicon pieces;
and 105, inserting the monocrystalline silicon wafers into a flower basket one by one, and cleaning each monocrystalline silicon wafer to obtain a plurality of target monocrystalline silicon wafers.
The cutting device comprises a crystal support, a cutting device and a cutting device, wherein the crystal support is used as a carrier, monocrystalline silicon is fixed at the bottom of the crystal support, then the monocrystalline silicon is controlled to be pressed downwards or lifted upwards by driving the crystal support, firstly, the monocrystalline silicon is pressed downwards, the cutting device also comprises a diamond cutting line, the diamond cutting line comprises diamonds with particle sizes ranging from 4 microns to 10 microns, and the tension of the diamond cutting line is 4.7-5.7 newtons; in the cutting process, the diamond cutting line is controlled to reciprocate back and forth at a certain cutting line speed, a gap can be uniformly cut out by utilizing the action of diamond within the particle size range of 4-10 mu m on the monocrystalline silicon, and along with the deepening of the downward pressing cutting stroke, the height of the monocrystalline silicon slices formed on the two sides of the diamond is higher, the stress of the monocrystalline silicon slices is more and more uneven in the gradual forming process, so that the diamond cutting line keeps a certain deformation radian by controlling the particle size of the diamond and the cutting tension of the diamond cutting line, and the diamond does not touch the monocrystalline silicon slices on the two sides when reciprocating back and forth at a high speed, thereby avoiding causing great stress on the monocrystalline silicon slices at the rear section of the stroke, and being beneficial to the formation of thin monocrystalline silicon slices.
Because the adhesion phenomenon appears in the thinner monocrystalline silicon piece of cutting, consequently utilize spray set to spray monocrystalline silicon in cutting process and handle, can prevent that the monocrystalline silicon piece of cutting from taking place the adhesion, and utilize guide pulley gas blowing device to carry out cleaning to cutting device, blow away the powder on the cutting device, prevent to introduce impurity in the cutting process to and prevent that cutting device from taking place wire jumper and broken string.
After the downward pressing cutting stroke is finished, namely when a plurality of monocrystalline silicon wafers are fixed on the wafer support, the cutting step is finished, then the wafer support needs to be moved upwards, and then the monocrystalline silicon is separated from the diamond cutting line, but because the gap between two adjacent monocrystalline silicon wafers is narrow, and the strength of the monocrystalline silicon wafers is not large, deformation or damage is easy to occur, when the monocrystalline silicon moves upwards, the diamond cutting line still moves back and forth at a certain linear speed, the linear speed in the upward lifting process is lower than the linear speed in the downward pressing process, the table speed in the upward lifting process is higher than the table speed in the downward pressing process, even if the diamond cutting line contacts with the monocrystalline silicon wafer in the upward lifting process, the diamond cutting line only slides and rubs on the surface of the monocrystalline silicon wafer without being damaged, the stress and damage in the upward lifting process of the monocrystalline silicon wafer are avoided, the displacement speed in the longitudinal direction is higher, and the contact time of the diamond cutting line and the monocrystalline silicon wafer is shortened, reducing the chance of a possible collision.
And finally, inserting a plurality of monocrystalline silicon wafers into the partition plates of the flower basket one by one, and cleaning to obtain the target monocrystalline silicon wafer.
As an embodiment, in order to better ensure the reliability of the silicon single crystal when being pressed down and lifted up in the cutting device, and considering the cutting efficiency, during the pressing down process, along with the deepening of the pressing down cutting stroke, the cutting linear speed of the diamond cutting line is rapidly increased from low speed to high speed, and is stabilized at the high speed until the whole process of the pressing down cutting stroke is completed, the final stable linear speed can be 1900-2200 meters per minute, and is preferably 2100 meters per minute, the table speed is increased and then decreased during the pressing down process, which means that the silicon single crystal is rapidly cut first, the maximum table speed is reached when the silicon single crystal is advanced to about 1/6 of the total stroke, the range of the maximum table speed is 2400-2600 micrometers per minute, the table speed is decreased after the maximum table speed is reached, and when the cutting is completed, the table speed is decreased to 0; in the lifting process, along with the deepening of the lifting and discharging stroke, the linear speed of the diamond cutting line is quickly increased from a low speed to a high speed, and is stabilized at the high speed until the whole lifting and discharging stroke is completed, the final stable linear speed can be 4-10 meters per minute, preferably 5 meters per minute, the table speed is faster when the table is lifted than when the table is pressed downwards, and after the table is lifted to the highest speed, the table speed is maintained until the whole lifting and discharging stroke is completed, and the range of the maximum table speed is 10-50 millimeters per minute.
Referring to fig. 2 and 3, as an example, when the single crystal silicon wafer 1 is inserted into the flower basket 5 piece by piece, the following steps are included:
conveying the monocrystalline silicon wafers 1 piece by piece to a flower basket 5, and moving the flower basket 5 upwards step by step; the method is characterized in that a plurality of monocrystalline silicon wafers 1 are piled together and piled into a pile, when the monocrystalline silicon wafers 1 are conveyed towards a flower basket 5, the monocrystalline silicon wafers 1 are required to be extracted and conveyed piece by piece, a plurality of layers of partition plates 6 are arranged in the flower basket 5, the partition plates 6 are only arranged at the left side and the right side, the middle part of the flower basket 5 is hollow, when one monocrystalline silicon wafer 1 is inserted into each partition plate 6 of the flower basket 5, the flower basket 5 moves one layer upwards to expose the next layer of hollow partition plate 6, the next monocrystalline silicon wafer 1 is inserted, the monocrystalline silicon wafers 1 are supported and stressed only by the partition plates 6 at the two ends, the middle part of each monocrystalline silicon wafer 1 is suspended, the thin monocrystalline silicon wafers 1 are soft in material, and can be deformed to be sunken downwards to a certain extent under the action of gravity or residual moisture on the monocrystalline silicon wafers;
wherein, in the process of conveying the monocrystalline silicon piece 1, drying air flow 2 is blown to the monocrystalline silicon piece 1, the wind direction of the drying air flow 2 and the conveying direction of the monocrystalline silicon piece 1 form a drying included angle, the drying air flow 2 is blown down from the oblique front upper part of the conveying direction of the monocrystalline silicon piece 1 and is used for drying water on the monocrystalline silicon piece 1, and further, the drying included angle is an obtuse angle, preferably an included angle of 150 degrees; alternatively, the drying gas flow 2 may be blown to the single crystal silicon wafer 1 from a plurality of places, for example, from obliquely front upper and obliquely front lower sides of the single crystal silicon wafer 1, to blow dry the moisture on the upper and lower surfaces of the single crystal silicon wafer 1 in the opposite directions of the transportation direction;
after the monocrystalline silicon wafer 1 is inserted into the lowest layer of the partition plate 6 of the flower basket 5, the jacking air flow 3 is blown to the monocrystalline silicon wafer 1 positioned on the lowest layer of the flower basket 5, the wind direction of the jacking air flow 3 and the inserting horizontal plane of the monocrystalline silicon wafer 1 in the partition plate 6 of the flower basket 5 form a jacking included angle, the jacking included angle is an acute angle, preferably an included angle of 30 degrees, and the wind direction of the jacking air flow 3 is opposite to the sinking direction of the monocrystalline silicon wafer 1; the jacking air flow 3 blows towards the monocrystalline silicon piece 1 towards an upward oblique angle, so that the monocrystalline silicon piece 1 overcomes the deformation of the monocrystalline silicon piece 1, a relatively horizontal state is kept, a middle sunken area of the monocrystalline silicon piece 1 caused by the gravity of the monocrystalline silicon piece is eliminated, the upper monocrystalline silicon piece 1 and the lower monocrystalline silicon piece 1 cannot collide until the next monocrystalline silicon piece 1 is inserted, and the monocrystalline silicon piece 1 is ensured to be smoothly inserted into the flower basket 5;
it can be seen that in the process of conveying the monocrystalline silicon wafer 1 to the flower basket 5, two processes exist, one is a linear conveying process, and in the process, the drying air flow 2 is used for drying accumulated water on the monocrystalline silicon wafer 1; the other process is the process of inserting the monocrystalline silicon wafer 1 into the flower basket 5, and the monocrystalline silicon wafer 1 can be acted by the jacking air flow 3 in the process of entering the flower basket 5 from the conveying device 4 or after entering the flower basket 5, so that the monocrystalline silicon wafer 1 is prevented from sinking and deforming.
Furthermore, the drying air flow 2 and the jacking air flow 3 respectively form air pressure of 0.2-0.3 MPa on the monocrystalline silicon piece 1, the air pressure in the range can not blow through the monocrystalline silicon piece 1 with the thickness of below 120 microns, the monocrystalline silicon piece 1 can be dried, and deformation caused by self gravity can be avoided.
As an example, when the single crystal silicon wafers 1 are inserted into the flower basket 5 piece by piece, the method comprises the following steps:
placing a stack of monocrystalline silicon wafers 1 in a wafer arranging machine, conveying a plurality of monocrystalline silicon wafers 1 into the lowest layer of partition plate 6 of a flower basket 5 piece by using the wafer arranging machine, and gradually moving the flower basket 5 upwards according to the wafer arranging speed of the wafer arranging machine to ensure that each monocrystalline silicon wafer 1 is inserted into one layer of partition plate 6, wherein the wafer arranging speed of the wafer arranging machine is 80-85 wafers per minute; preferably, a conveying device 4 is arranged between the sheet arranging machine and the flower basket 5, and a drying and blowing device for blowing out the drying air flow 2 is arranged above and/or below the conveying device 4, wherein the temperature of the drying air flow 2 can be 50-80 ℃; and a jacking air blowing device is also arranged between the conveying device 4 and the flower basket 5, and the jacking air blowing device blows out jacking air flow 3 from bottom to top or obliquely from top to bottom. Under this row of piece speed, can guarantee in 1~1.5 m's transport distance, the moisture of monocrystalline silicon piece 1 upper and lower two sides is weathered or is dried, then when inserting the basket of flowers 5, and monocrystalline silicon piece 1 can receive the effect of jacking air current 3 and avoid taking place sunken deformation downwards in the time gap that the basket of flowers 5 moved up step by step, guarantees the smooth insertion of next monocrystalline silicon piece 1, avoids the piece phenomenon of hitting, and the operating efficiency is high.
As an example, the cleaning process for each single crystal silicon wafer may include: adding 7-8 liters of hydrogen peroxide and 80-120 grams of sodium hydroxide into a cleaning device, and then putting a plurality of monocrystalline silicon pieces into the cleaning device in batches for cleaning, wherein during cleaning, the cleaning temperature is set as follows: setting the cleaning time to be at 40-45 ℃ as follows: 190-220 seconds.
Because the monocrystalline silicon piece is thinner, and when the more foam that abluent addition medicament produced, let the monocrystalline silicon piece suspend on belt cleaning device's surface easily, and lead to wasing unclean, consequently, this application is at the abluent in-process of monocrystalline silicon piece, has reduced the addition of washing medicament for prior art, has reduced abluent temperature simultaneously to reduce the foam that the medicament reaction produced, in order to guarantee abluent cleanliness factor, increased the cleaning time simultaneously.
It should be noted that, because the monocrystalline silicon wafers are added to the cleaning device in batches, when the number of the monocrystalline silicon wafers added to the cleaning device is greater than a preset threshold value, 2-3 liters of hydrogen peroxide are added to the cleaning device to ensure the sufficiency of the cleaning agent.
Optionally, after cleaning, the silicon wafer can be taken out in a slow pulling manner, wherein the pulling temperature can be 90-100 ℃, the pulling speed can be 15000-28000 wafers/hour, and the included angle between the silicon wafer and the horizontal plane in the pulling process can be 30-38 ℃. By pulling in the above manner, the volatilization of water or drug residue on the surface of the single crystal silicon wafer can be accelerated.
As an embodiment, the single crystal silicon can be a single crystal silicon rod, the size of the single crystal silicon rod is generally 210 × 210 × 830mm, the crystal holder comprises a plastic plate and a metal plate, wherein the plastic plate can be a solid structure, the plastic plate can be a plastic plate with the hardness of 85-95 MPa, and the plastic plate can also be a plastic plate with the electrophoresis current value of 10-12A.
When the installation, earlier the plastic slab is fixed in the metal sheet, will again monocrystalline silicon is fixed in the plastic slab, from last to last metal sheet, plastic slab and monocrystalline silicon in proper order down promptly, it needs to be noted, the transmission lug connection metal sheet that control reciprocated, and the relative metal sheet hardness of plastic slab is lower, therefore when monocrystalline silicon pushes down the cutting, the control pushes down the cutting stroke and is greater than monocrystalline silicon's thickness, for example monocrystalline silicon's thickness is 210mm, then pushes down the cutting stroke and is 220mm, because the diamond cut line can keep certain deformation radian when the cutting, increase and push down the cutting stroke, can compensate the recessed in diamond cut line middle part, guarantee to cut out a plurality of single-chip monocrystalline silicon pieces from whole monocrystalline silicon, control the stroke progress more easily.
Preferably, the metal plate, the plastic plate and the monocrystalline silicon can be directly connected and fixed by using an adhesive material, the adhesive material comprises an adhesive and a curing agent, and the ratio of the adhesive to the curing agent is 1.2-1.5: the adhesive is epoxy resin, which can be bisphenol A type epoxy resin and bisphenol F type epoxy resin, and the epoxy resin with the structure can ensure that the connection strength between the monocrystalline silicon piece and the plastic plate is improved under the condition that the contact area is only 120 microns wide.
In practical application, the monocrystalline silicon is fixed on the plastic plate with the solid structure, so that the situation that the connection surface of the monocrystalline silicon and the plastic plate falls off due to the acting force of the monocrystalline silicon in the cutting process can be prevented, and the cutting of the monocrystalline silicon piece cannot be carried out. Preferably, a binder and curing agent are used in a ratio of 1.4: the bonding material of 1 fixes the monocrystalline silicon on the plastic plate, so that the bonding firmness can be improved. The plastic plate with the novel structure can ensure the strength of the plastic plate, improve the surface roughness of the plastic plate to Ra7.5-10 and improve the bonding capacity of the plastic plate and a bonding material.
As an embodiment, after the cleaning treatment is completed, extracting and detecting the plurality of target monocrystalline silicon pieces, and placing the target monocrystalline silicon pieces meeting the detection conditions in a preset container at a set placing speed;
the extraction speed in extraction detection is 6800-7200 tablets/hour, and the setting speed is as follows: 6000 to 7000 tablets/hour.
In a second aspect, embodiments of the present application provide a single crystal silicon wafer produced by the method for producing a single crystal silicon wafer according to any of the above embodiments, further, the single crystal silicon wafer has a thickness of 110 μm.
Compared with the prior art, the embodiment provides a production method of a monocrystalline silicon piece and the monocrystalline silicon piece, the monocrystalline silicon piece is fixed on a substrate by obtaining the monocrystalline silicon, the monocrystalline silicon is controlled to be pressed downwards, and the monocrystalline silicon is cut by using a cutting device, wherein the cutting device comprises: the diamond cutting line comprises diamonds with the particle size range of 4-10 mu m, the tension of the diamond cutting line is 4.7-5.7N, meanwhile, a spraying device is used for spraying monocrystalline silicon in the cutting process, a guide wheel blowing device is used for cleaning the cutting device, the monocrystalline silicon is controlled to move upwards after the cutting is finished, a plurality of cut monocrystalline silicon wafers are taken out of a crystal support and inserted into a flower basket piece by piece, and finally, the cleaning treatment is finished, so that a plurality of target monocrystalline silicon wafers are obtained. The production method of the monocrystalline silicon piece provided by the embodiment of the application, the monocrystalline silicon piece is cut through the cutting device, especially, the grain diameter of diamond on a diamond cutting line is controlled, the monocrystalline silicon piece with the small and uniform thickness can be cut out, meanwhile, the monocrystalline silicon piece is sprayed in the cutting process to prevent the cut monocrystalline silicon piece from being adhered, the cutting device is cleaned by the guide wheel blowing device to prevent impurities from being introduced in the cutting process, the cutting device is prevented from jumping and breaking, when the crystal support is moved upwards, the diamond cutting line is still kept to run at a certain linear speed, the speed of moving the monocrystalline silicon piece upwards is controlled, and the situation that the monocrystalline silicon piece is separated from the crystal support due to the fact that the linear speed is too large or the speed of the table is too fast in the moving process is avoided.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
Reference throughout this specification to "one embodiment," "another embodiment," "an embodiment," "a preferred embodiment," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment described generally in this application. The appearances of the same phrase in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature, structure, or characteristic in connection with other ones of the embodiments. Although the invention has been described with reference to a number of illustrative examples thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the scope and spirit of the principles of this disclosure. More specifically, other uses will be apparent to those skilled in the art in view of variations and modifications in the subject matter incorporating the components and/or arrangement of the arrangement within the scope of the disclosure, drawings and claims hereof.
Claims (9)
1. A method for producing a single-crystal silicon wafer for producing a 110 μm-thick single-crystal silicon wafer, comprising:
obtaining monocrystalline silicon, and fixing the monocrystalline silicon on a crystal support;
controlling the crystal support to be fixed with one side of the monocrystalline silicon to be pressed downwards, and cutting the monocrystalline silicon by using a cutting device, wherein the cutting device comprises: the diamond cutting line comprises diamond with the particle size range of 4-10 mu m, and the tension of the diamond cutting line is 4.7-5.7N;
in the cutting process, a spraying device is used for spraying the monocrystalline silicon, and a guide wheel blowing device is used for cleaning the cutting device;
after the downward pressing cutting stroke is finished, controlling the crystal support to move upwards, and separating the monocrystalline silicon from the crystal support to obtain a plurality of monocrystalline silicon pieces;
inserting the monocrystalline silicon wafers into a flower basket one by one, and cleaning each monocrystalline silicon wafer to obtain a plurality of target monocrystalline silicon wafers;
and in the process of controlling the crystal support to move upwards, the cutting line speed of the diamond cutting line is controlled to be slow in the downward pressing process, the maximum table speed in the upward moving process is controlled to be fast in the downward pressing process, the cutting line speed of the diamond cutting line of the cutting device is controlled to be 4-10 meters per minute when the crystal support is moved upwards, and the table speed of the monocrystalline silicon is controlled to be 10-50 millimeters per minute.
2. The production method according to claim 1, wherein the inserting of the single-crystal silicon wafer piece by piece into the flower basket comprises the steps of:
conveying the monocrystalline silicon wafers piece by piece to a flower basket, and moving the flower basket upwards step by step;
blowing a drying air flow to the monocrystalline silicon wafer in the conveying process of the monocrystalline silicon wafer, wherein the wind direction of the drying air flow and the conveying direction of the monocrystalline silicon wafer form a drying included angle which is an obtuse angle;
after the monocrystalline silicon piece is inserted into the flower basket, blowing jacking air flow to the monocrystalline silicon piece positioned on the lowest layer of the flower basket, wherein the wind direction of the jacking air flow and the inserting horizontal plane of the monocrystalline silicon piece in a partition plate of the flower basket form a jacking included angle, and the jacking included angle is an acute angle;
and the drying air flow and the jacking air flow respectively form air pressure of 0.2-0.3 MPa on the monocrystalline silicon piece.
3. The production method according to claim 2, wherein the inserting of the single-crystal silicon wafer piece by piece into the flower basket comprises the steps of:
and conveying the monocrystalline silicon wafers into the partition plates of the basket one by using a wafer arranging machine, moving the basket upwards step by step according to the wafer arranging speed of the wafer arranging machine so that each monocrystalline silicon wafer is inserted into one layer of partition plate, wherein the wafer arranging speed of the wafer arranging machine is 80-85 wafers per minute.
4. The production method according to claim 1, wherein the cleaning process for each of the single-crystal silicon wafers comprises:
adding 7-8 liters of hydrogen peroxide and 80-120 grams of sodium hydroxide into a cleaning device;
putting the monocrystalline silicon pieces into the cleaning device in batches for cleaning, wherein the cleaning temperature is set as follows: at 40-45 ℃, setting the cleaning time as follows: 190-220 seconds.
5. The production method according to claim 4, characterized in that the method further comprises:
and when the number of the monocrystalline silicon wafers in the cleaning device is detected to be larger than a preset threshold value, adding 2-3 liters of hydrogen peroxide into the cleaning device.
6. The production method of claim 1, wherein the crystal support comprises a plastic plate and a metal plate, the plastic plate is of a solid structure, the hardness of the plastic plate is 85-95 MPa, and the step of fixing the monocrystalline silicon on the crystal support comprises the following steps:
firstly, fixing a plastic plate on a metal plate, and then fixing the monocrystalline silicon on the plastic plate.
7. The production method according to claim 6, wherein when the plastic plate is fixed to the bottom surface of the metal plate and the single crystal silicon is fixed to the bottom surface of the plastic plate, the method comprises the steps of:
fixing the plastic plate on the metal plate by using an adhesive material, fixing the monocrystalline silicon on the plastic plate by using the adhesive material, wherein the adhesive material comprises a binder and a curing agent, and the ratio of the binder to the curing agent is 1.2-1.5: 1.
8. the production method according to claim 1, characterized in that the method further comprises:
extracting and detecting the plurality of target monocrystalline silicon wafers, and placing the target monocrystalline silicon wafers meeting the detection conditions in a preset container at a set placing speed; the extraction speed during extraction detection is 6800-7200 tablets/hour, and the set placing speed is as follows: 6000 to 7000 tablets/hour.
9. A single-crystal silicon wafer produced by the method for producing a single-crystal silicon wafer according to any one of claims 1 to 8, which has a thickness of 110 μm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210245418.3A CN114311355B (en) | 2022-03-14 | 2022-03-14 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
| PCT/CN2023/081242 WO2023174241A1 (en) | 2022-03-14 | 2023-03-14 | Production method for monocrystalline silicon wafer and monocrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210245418.3A CN114311355B (en) | 2022-03-14 | 2022-03-14 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114311355A CN114311355A (en) | 2022-04-12 |
| CN114311355B true CN114311355B (en) | 2022-05-27 |
Family
ID=81034051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210245418.3A Active CN114311355B (en) | 2022-03-14 | 2022-03-14 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114311355B (en) |
| WO (1) | WO2023174241A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114311355B (en) * | 2022-03-14 | 2022-05-27 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
| CN114670352B (en) * | 2022-05-26 | 2022-08-12 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN115236108B (en) * | 2022-07-22 | 2024-04-26 | 锦州阳光能源有限公司 | Welding process quality detection method of crystalline silicon battery based on electron microscope |
| CN117885958B (en) * | 2024-03-15 | 2024-06-11 | 江苏福旭科技有限公司 | Monocrystalline silicon stacking system |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005095076A1 (en) * | 2004-03-30 | 2005-10-13 | Solaicx, Inc. | Method and apparatus for cutting ultra thin silicon wafers |
| JP5541941B2 (en) * | 2010-02-15 | 2014-07-09 | 金井 宏彰 | Fixed abrasive saw wire |
| CN103087850B (en) * | 2011-11-08 | 2017-10-03 | 协鑫集成科技股份有限公司 | A kind of monocrystalline silicon piece prerinse liquid and its cleaning method |
| CN103658096B (en) * | 2012-08-31 | 2015-10-21 | 浙江昱辉阳光能源有限公司 | A kind of cleaning method of silicon wafer cut by diamond wire |
| CN103681239B (en) * | 2013-10-29 | 2016-09-28 | 宁夏银星能源股份有限公司 | A kind of method cleaning monocrystalline silicon sheet surface |
| CN105082381A (en) * | 2015-08-07 | 2015-11-25 | 烟台力凯电子科技有限公司 | Guide wheel device of multi-wire sawing machine |
| CN106584687A (en) * | 2015-10-16 | 2017-04-26 | 西安中晶半导体材料有限公司 | Monocrystalline silicon wafer cutting device and method |
| CN106217665B (en) * | 2016-08-12 | 2018-08-21 | 上海申和热磁电子有限公司 | A kind of method of extra-fine steel wire cutting ultra thin silicon wafers |
| CN206532764U (en) * | 2017-03-20 | 2017-09-29 | 常州亿晶光电科技有限公司 | Lossless formula automatically cleaning silicon chip inserting piece device |
| CN108858840A (en) * | 2018-06-27 | 2018-11-23 | 阜宁协鑫光伏科技有限公司 | The method for cutting silicon wafer |
| CN112776195A (en) * | 2019-11-01 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer processing method, grooving main roller and slicing equipment |
| CN111216255A (en) * | 2020-03-03 | 2020-06-02 | 大连威凯特科技有限公司 | Equipment and method for degumming crystal support in photovoltaic industry |
| CN114311355B (en) * | 2022-03-14 | 2022-05-27 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
-
2022
- 2022-03-14 CN CN202210245418.3A patent/CN114311355B/en active Active
-
2023
- 2023-03-14 WO PCT/CN2023/081242 patent/WO2023174241A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023174241A1 (en) | 2023-09-21 |
| CN114311355A (en) | 2022-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114311355B (en) | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer | |
| CN100334706C (en) | Semiconductor device and its manufacturing method | |
| JP4515326B2 (en) | Semiconductor chip separation apparatus and separation method | |
| CN102683256B (en) | Manufacture equipment and the method for semiconductor device | |
| KR101473492B1 (en) | Manufacturing method of semiconductor integrated circuit device | |
| CN102148142B (en) | Control and monitoring system for thin die detachment and pick-up | |
| KR102231293B1 (en) | Die bonding apparatus | |
| KR20110106813A (en) | Workpiece transport method and workpiece transport apparatus | |
| JP5813432B2 (en) | Die bonder and bonding method | |
| JP2000353710A (en) | Manufacture of pellet pickup device and semiconductor device | |
| JP2009188157A (en) | Chip-releasing device, chip-releasing method, and chip-pickup device | |
| CN102623372A (en) | Automatic wafer-separating device for wet silicon wafers | |
| KR20130090827A (en) | Substrate transport method and substrate transport apparatus | |
| CN109599352A (en) | With expanding unit and with extended method | |
| JP5965316B2 (en) | Wafer separation apparatus, wafer separation transfer apparatus, wafer separation method, wafer separation transfer method, and solar cell wafer separation transfer method | |
| CN101512746B (en) | Chip device picking method and chip device picking apparatus | |
| JP4668350B1 (en) | Semiconductor wafer separator | |
| CN210443539U (en) | Slicing sucker for single-side texturing | |
| JP5602784B2 (en) | Pickup method and pickup device | |
| JPS62210635A (en) | Method and apparatus for isolating article | |
| JP2013219245A (en) | Method for manufacturing semiconductor device | |
| JP5214739B2 (en) | Chip peeling method, semiconductor device manufacturing method, and chip peeling apparatus | |
| JP2011204868A (en) | Method of transferring semiconductor chip and semiconductor device manufacturing apparatus using the same | |
| JPH09283540A (en) | Chip pickup structure and chip pickup method for die bonding apparatus | |
| CN214175998U (en) | Film expanding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 519000 unit B25, 2nd floor, building 4, No. 153, Rongao Road, Hengqin New District, Zhuhai City, Guangdong Province Patentee after: Gaojing Solar Co.,Ltd. Address before: 519000 unit B25, 2nd floor, building 4, No. 153, Rongao Road, Hengqin New District, Zhuhai City, Guangdong Province Patentee before: Guangdong Gaojing Solar Energy Technology Co.,Ltd. |