CN108858840A - The method for cutting silicon wafer - Google Patents
The method for cutting silicon wafer Download PDFInfo
- Publication number
- CN108858840A CN108858840A CN201810678797.9A CN201810678797A CN108858840A CN 108858840 A CN108858840 A CN 108858840A CN 201810678797 A CN201810678797 A CN 201810678797A CN 108858840 A CN108858840 A CN 108858840A
- Authority
- CN
- China
- Prior art keywords
- cutting
- diamond wire
- silicon wafer
- silico briquette
- workbench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0675—Grinders for cutting-off methods therefor
Abstract
The present invention relates to a kind of methods for cutting silicon wafer, include the following steps：The crystal holder for being stained with silico briquette is installed on the workbench of silico briquette cutting machine of the top of king kong line network；The linear velocity that guide wheel drives diamond wire attached thereto to move to diamond wire reaches predetermined value；The workbench is pushed, while the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, diamond wire carries out grinding cutting to silico briquette；Wherein, the grain diameter D50 value for forming the bortz powder of the diamond wire is 5.5 μm -8.5 μm, the grain density of bortz powder is 150/mm-250/mm on the diamond wire, in cutting process, the predetermined value of the linear velocity of the diamond wire is 1200m/min-2000m/min, and the pushing speed of the workbench is 0.5mm/min-3.5mm/min.
Description
Technical field
The present invention relates to silicon wafers to cut field, more particularly to a kind of method for cutting silicon wafer.
Background technique
Photovoltaic industry technology development in recent years is maked rapid progress, as the main production link of photovoltaic industry
It is especially true that silicon wafer cuts link.It successively have passed through the free mill of mortar free abrasive straight cuts, mortar in silicon wafer cutting link
Expect the technological innovations such as structure wire cutting, the cutting of diamond wire concretion abrasive.Since cutting efficiency is cut considerably beyond mortar, and silicon
Material loss is substantially reduced, therefore diamond wire concretion abrasive has become photovoltaic and is sliced most important cutting mode.
But the cutting efficiency of traditional silicon wafer cut by diamond wire is low, is far from satisfying the market demand.
Summary of the invention
Based on this, it is necessary to for the low problem of the cutting efficiency of traditional silicon wafer cut by diamond wire, provide a kind of cutting
The new method of silicon wafer.
A method of cutting silicon wafer includes the following steps：
The crystal holder for being stained with silico briquette is installed on the workbench of silico briquette cutting machine of the top of king kong line network；
The linear velocity that guide wheel drives diamond wire attached thereto to move to diamond wire reaches predetermined value；
The workbench is pushed, while the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, diamond wire is to silico briquette
Carry out grinding cutting；
Wherein, the grain diameter D50 value for forming the bortz powder of the diamond wire is 5.5 μm -8.5 μm, the diamond wire
The grain density of upper bortz powder is 150/mm-250/mm, and in cutting process, the linear velocity of the diamond wire makes a reservation for
Value is 1200m/min-2000m/min, and the pushing speed of the workbench is 0.5mm/min-3.5mm/min.
The above method cuts the diamond wire of line options specific standard, guarantees that it, with good sharp property and intensity, and then makes
Quick reciprocating cutting silico briquette can be carried out by obtaining the diamond wire, improve cutting efficiency.In addition, also to the linear velocity of diamond wire and work
Two important parameters of pushing speed for making platform optimize, and further improve the cutting efficiency of silico briquette, reduce working hour.
The tensile strength of the diamond wire is 4500-5500N/mm in one of the embodiments,2。
The cutting tension of the diamond wire is 5N-12N in one of the embodiments,.
In one of the embodiments, in diamond wire reciprocatory movement, the starting of the reciprocating motion of the diamond wire
Acceleration is 4m/s2-8m/s2。
The fracture tension of the diamond wire is 9N-20N in one of the embodiments,.
The pushing speed of the workbench is divided into three parts in one of the embodiments,：Feed cutting speed is 0.5-
1.5mm/min, main cutting speed are 2.3-3.5mm/min, and knife cutting speed is 0.1-0.5mm/min out.
The diameter of section of the diamond wire is 60 μm -90 μm in one of the embodiments,.
It in one of the embodiments, further include cutting the silico briquette after cutting with 40 DEG C -55 DEG C of warm water opposite grinding to impregnate 5min-
6min, then degumming, cleaning.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with specific embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain this hair
It is bright, it is not intended to limit the present invention.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more
Any and all combinations of relevant listed item.
One embodiment of the invention is a kind of method for cutting silicon wafer, is included the following steps：
S1, the crystal holder for being stained with silico briquette is installed on the workbench of silico briquette cutting machine of the top of king kong line network.
Then silico briquette by resin-bonded in crystal holder, can install the work of the silico briquette cutting machine of the top of king kong line network
On platform.
The linear velocity that S2, guide wheel drive diamond wire attached thereto to move to diamond wire reaches predetermined value, pushes the work
Make platform, while the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, diamond wire carries out grinding cutting to silico briquette；Wherein,
The grain diameter D50 value for forming the bortz powder of the diamond wire is 5.5 μm -8.5 μm, of bortz powder on the diamond wire
Granule density is 150/mm-250/mm, and in cutting process, the predetermined value of the linear velocity of the diamond wire is 1200m/min-
2000m/min, the pushing speed of the workbench are 0.5mm/min-3.5mm/min.
Be preferably carried out in mode one, form the bortz powder of the diamond wire grain diameter D50 value be 5.5 μm-
6.5μm.It is highly preferred that the grain diameter D50 value for forming the bortz powder of the diamond wire is 5.8 μm -6.5 μm, such as form
The grain diameter D50 value of the bortz powder of the diamond wire is 6.0.
Be preferably carried out in mode one, on the diamond wire grain density of bortz powder be 180/mm-220/
mm.It is highly preferred that the grain density of bortz powder is 180/mm-200/mm, such as the diamond wire on the diamond wire
The grain density of upper bortz powder is 190/mm.
It is preferably carried out in mode one, the predetermined value of the linear velocity of the diamond wire is 1400m/min-1800m/min.
It is highly preferred that the predetermined value of the linear velocity of the diamond wire is 1400m/min-1600m/min, such as the linear speed of the diamond wire
The predetermined value of degree is 1500m/min.
It is preferably carried out in mode one, the pushing speed of the workbench is 2.3mm/min-3.0mm/min.More preferably
Ground, the pushing speed of the workbench are 2.3mm/min-2.6mm/min.Such as the pushing speed of the workbench is 2.4mm/
min。
In a preferred embodiment, the pushing speed of the workbench can be divided into three parts：(silico briquette starts to cut for feed
Disconnected stage and cutting mid-term) speed is 2.3-3.0mm/min, knife cutting (stage that silico briquette will be cut off) speed is 1.1- out
1.5mm/min.It generally requires biggish cutting force in the initial phase of silico briquette cutting to be cut, that is to say, that need very fast
Feed velocity realize fly-cutting, in the later period that silico briquette will be cut through, required cutting force is relatively small, only needs 1.1-
Cutting can be completed in the cutting speed of 1.5mm/min.It can also prevent from causing diamond wire to form excessive bow because pushing excessive velocities
It is curved, diamond wire is damaged, or even snap.
Wherein, in cutting process, the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, in the process, gold
Rigid line carries out grinding cutting to silico briquette.It is reference with certain point on diamond wire, the primary point of reciprocating motion returns to initial position and is
The period of motion of one reciprocating motion, that is to say, that moved back and forth by primary, the positive cabling and reversed cabling of diamond wire pass through
The position crossed overlaps.In cutting process, the velocity variations of diamond wire are：Guide wheel rotates forward, and diamond wire first accelerates, to
Silico briquette is at the uniform velocity cut after velocity-stabilization, then speed is reduced to zero, then reversed acceleration, and silico briquette is at the uniform velocity cut after velocity-stabilization, is dropped
Speed carries out grinding cutting to silico briquette to zero, then the continuous circulation above process.
In a preferred embodiment, in diamond wire reciprocatory movement, the reciprocating motion of the diamond wire is risen
Starting acceleration is 4m/s2-8m/s2, i.e., the acceleration of positive cutting is 4m/s2-8m/s2, the acceleration of reverse cut is also
4m/s2-8m/s2.Preferably, the starting acceleration of the reciprocating motion of the diamond wire is 4m/s2-7m/s2。
In a preferred embodiment, the frequency of the period of motion is 40-60 times/min.Under this frequency, diamond wire
Cut the more efficient of silico briquette.
In a preferred embodiment, the tensile strength of the diamond wire is 4500-5500N/mm2.With such Buddha's warrior attendant
Wire cutting silico briquette it is more efficient.It is highly preferred that the tensile strength of the diamond wire is 4500-5000N/mm2.It is highly preferred that
The tensile strength of the diamond wire is 4500-4800N/mm2.Such as the tensile strength of the diamond wire is 4600N/mm2.
In a preferred embodiment, the cutting tension of the diamond wire is 5N-12N.With such Buddha's warrior attendant wire cutting silicon
Block it is more efficient.It is highly preferred that the cutting tension of the diamond wire is 5N-7N.For example, the cutting tension of the diamond wire is
6N。
In a preferred embodiment, the fracture tension of the diamond wire is 9N-20N.With such Buddha's warrior attendant wire cutting silicon
Block it is more efficient.It is highly preferred that the fracture tension of the diamond wire is 9N-10N, such as the fracture tension of the diamond wire is
9.5N。
In a preferred embodiment, the diameter of section of the diamond wire is 60 μm -90 μm.With the diamond wire of this diameter
The effect for cutting silico briquette is more preferable.
It in a preferred embodiment, further include cutting the silico briquette after cutting with 40 DEG C -55 DEG C of warm water opposite grinding to impregnate
5min-6min, then degumming, cleaning.The degumming, cleaning：Silicon wafer immersion after cutting is subjected to degumming in the hot water；By silicon
Piece is cleaned by different soda acid technology grooves, is removed impurity, metal ion, silicon powder of attachment etc., is kept silicon chip surface
It is clean.
The above method cuts the diamond wire of line options specific standard, guarantees that it, with good sharp property and intensity, and then makes
Quick reciprocating cutting silico briquette can be carried out by obtaining the diamond wire, improve cutting efficiency.In addition, also to the linear velocity of diamond wire and work
Two important parameters of pushing speed for making platform optimize, and further improve the cutting efficiency of silico briquette, reduce working hour.
Below in conjunction with specific embodiment, the present invention is further elaborated.
Embodiment 1
A method of cutting silicon wafer includes the following steps：
It selects with a thickness of 156mm, cross sectional dimensions is 156 × 156mm silico briquette, and the diameter of section of diamond wire selects 70 μm.
The crystal holder for being stained with silico briquette is installed on the workbench of silico briquette cutting machine of the top of king kong line network；
The linear velocity that guide wheel drives diamond wire attached thereto to move to diamond wire reaches predetermined value；
Workbench is pushed, while the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, diamond wire carries out silico briquette
Grinding cutting.Other parameters are shown in Table 1.
Table 1
| Parameter | Embodiment 1 |
| D50(μm) | 6.3 |
| Diamond density (grain/mm) | 180 |
| Tensile strength (N/mm2) | 4300 |
| Rupture pull force (N) | 16.2 |
| Linear velocity (m/min) | 1440 |
| Acceleration (m/s2) | 4 |
| Workbench decrease speed (mm/min) | 2.3 |
| It cuts tension (N) | 13 |
It is 130 minutes a length of when the cutting of one knife of every cutting.
Embodiment 2
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 2 the difference is that cutting parameter is different：
Table 2
| Parameter | Embodiment 2 |
| D50(μm) | 6.3 |
| Diamond density (grain/mm) | 180 |
| Tensile strength (N/mm2) | 5000 |
| Rupture pull force (N) | 16.2 |
| Linear velocity (m/min) | 1440 |
| Acceleration (m/s2) | 4 |
| Workbench decrease speed (mm/min) | 2.3 |
| It cuts tension (N) | 10.0 |
It is 122 minutes a length of when the cutting of one knife of every cutting.
Embodiment 3
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 3 the difference is that cutting parameter is different：
Table 3
It is 113 minutes a length of when the cutting of one knife of every cutting.
Embodiment 4
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 4 the difference is that cutting parameter is different：
Table 4
| Parameter | Embodiment 4 |
| D50(μm) | 6 |
| Diamond particles density (grain/mm) | 220 |
| Tensile strength (N/mm2) | 5000 |
| Rupture pull force (N) | 16.0 |
| Linear velocity (m/min) | 1640 |
| Acceleration (m/s2) | 5 |
| Workbench decrease speed (mm/min) | 2.6 |
| It cuts tension (N) | 9.5 |
It is 106 minutes a length of when the cutting of one knife of every cutting.
Embodiment 5
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 5 the difference is that cutting parameter is different：
Table 5
It is 95 minutes a length of when the cutting of one knife of every cutting.
Embodiment 6
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 6 the difference is that cutting parameter is different：
Table 6
| Parameter | Embodiment 6 |
| D50(μm) | 5.8 |
| Diamond particles density (grain/mm) | 250 |
| Tensile strength (N/mm2) | 4500 |
| Rupture pull force (N) | 14.5 |
| Linear velocity (m/min) | 1800 |
| Acceleration (m/s2) | 7 |
| Workbench decrease speed (mm/min) | 3.0 |
| It cuts tension (N) | 8.5 |
It is 85 minutes a length of when the cutting of one knife of every cutting.
Comparative example 1
Select the silico briquette and diamond wire of size in the same manner as in Example 1.Cut silicon wafer method substantially with 1 phase of embodiment
Together, specific such as table 7 the difference is that cutting parameter is different：
Table 7
It is 146 minutes a length of when the cutting of one knife of every cutting.
Comprehensive each embodiment group and comparative example group are it is found that other embodiments group cutting compared with one knife of every cutting in embodiment 1
It is shorter to cut duration, mainly other cutting parameters are also optimized, the cutting duration of one knife of every cutting in embodiment 6 is most
It is short, only 85 minutes.In addition, the cutting duration of one knife of every cutting of each embodiment group is shorter than every cutting one in comparative example 1
The cutting duration of knife.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of method for cutting silicon wafer, which is characterized in that include the following steps：
The crystal holder for being stained with silico briquette is installed on the workbench of silico briquette cutting machine of the top of king kong line network；
The linear velocity that guide wheel drives diamond wire attached thereto to move to diamond wire reaches predetermined value；
The workbench is pushed, while the guide wheel of silico briquette cutting machine drives diamond wire reciprocating, diamond wire carries out silico briquette
Grinding cutting；
Wherein, the grain diameter D50 value for forming the bortz powder of the diamond wire is 5.5 μm -8.5 μm, gold on the diamond wire
The grain density of emery is 150/mm-250/mm, and in cutting process, the predetermined value of the linear velocity of the diamond wire is
1200m/min-2000m/min, the pushing speed of the workbench are 0.5mm/min-3.5mm/min.
2. the method for cutting silicon wafer according to claim 1, which is characterized in that the tensile strength of the diamond wire is
4500-5500N/mm2。
3. the method for cutting silicon wafer according to claim 1, which is characterized in that the cutting tension of the diamond wire is 5N-
12N。
4. the method for cutting silicon wafer according to claim 1, which is characterized in that in diamond wire reciprocatory movement, institute
The starting acceleration for stating the reciprocating motion of diamond wire is 4m/s2-8m/s2。
5. the method for cutting silicon wafer according to claim 1, which is characterized in that the fracture tension of the diamond wire is 9N-
20N。
6. the method for cutting silicon wafer according to claim 1, which is characterized in that the pushing speed of the workbench is divided into three
Part：Feed cutting speed is 0.5-1.5mm/min, and main cutting speed is 2.3-3.5mm/min, and knife cutting speed is 0.1- out
0.5mm/min。
7. the method for cutting silicon wafer according to claim 1, which is characterized in that the diameter of section of the diamond wire is 60 μ
m-90μm。
8. the method for cutting silicon wafer according to claim 1, which is characterized in that further include the warm water pair with 40 DEG C -55 DEG C
Silico briquette after grinding cutting impregnates 5min-6min, then degumming, cleaning.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109435085A (en) * | 2019-01-08 | 2019-03-08 | 天津中环领先材料技术有限公司 | A kind of technique of diamond wire cutting semi-conductor silicon chip |
| CN110142886A (en) * | 2019-06-28 | 2019-08-20 | 阜宁协鑫光伏科技有限公司 | The method of silicon wafer cut by diamond wire |
| CN112405912A (en) * | 2020-10-30 | 2021-02-26 | 唐山国芯晶源电子有限公司 | Process method for cutting quartz wafer by diamond wire |
| CN112776197A (en) * | 2020-12-31 | 2021-05-11 | 句容协鑫光伏科技有限公司 | Method for cutting silicon wafer by diamond wire |
| CN113878734A (en) * | 2020-07-03 | 2022-01-04 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN114311355A (en) * | 2022-03-14 | 2022-04-12 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109435085A (en) * | 2019-01-08 | 2019-03-08 | 天津中环领先材料技术有限公司 | A kind of technique of diamond wire cutting semi-conductor silicon chip |
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| CN110142886B (en) * | 2019-06-28 | 2021-04-06 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon wafer by diamond wire |
| CN113878734A (en) * | 2020-07-03 | 2022-01-04 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN113878734B (en) * | 2020-07-03 | 2024-02-20 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN112405912A (en) * | 2020-10-30 | 2021-02-26 | 唐山国芯晶源电子有限公司 | Process method for cutting quartz wafer by diamond wire |
| CN112776197A (en) * | 2020-12-31 | 2021-05-11 | 句容协鑫光伏科技有限公司 | Method for cutting silicon wafer by diamond wire |
| CN114311355A (en) * | 2022-03-14 | 2022-04-12 | 广东高景太阳能科技有限公司 | Production method of monocrystalline silicon wafer and monocrystalline silicon wafer |
| WO2023174241A1 (en) * | 2022-03-14 | 2023-09-21 | 高景太阳能股份有限公司 | Production method for monocrystalline silicon wafer and monocrystalline silicon wafer |
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Application publication date: 20181123 |