CN112157831B - Semiconductor silicon slicing diamond wire cutting process for power device - Google Patents
Semiconductor silicon slicing diamond wire cutting process for power device Download PDFInfo
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- CN112157831B CN112157831B CN202010753105.XA CN202010753105A CN112157831B CN 112157831 B CN112157831 B CN 112157831B CN 202010753105 A CN202010753105 A CN 202010753105A CN 112157831 B CN112157831 B CN 112157831B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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Abstract
The invention belongs to the technical field of diamond wire cutting, and particularly relates to a semiconductor silicon slicing diamond wire cutting process for a power device. The diamond wire slice is applied to the small-diameter silicon slice for the power device, the cutting force is stronger, the rapid cutting and thinning are easier to realize, and the cutting mode of cutting the semiconductor silicon slice by the diamond wire through mortar is replaced.
Description
Technical Field
The invention belongs to the technical field of diamond wire cutting, and particularly relates to a diamond wire cutting process of a semiconductor silicon slice for a power device.
Background
At present, the small-diameter silicon slice for the power device is widely applied to a middle-low integrated circuit, and the small-size silicon slice can be used as a substrate material to manufacture various power electronic devices through processes such as epitaxy, CVD and the like after being ground and corroded. In order to ensure the yield of electronic power devices and have higher requirements on the surface quality of small-diameter silicon slices, the conventional silicon wafer slices are mainly cut by multi-line mortar, free abrasives are used for cutting the mortar, SiC and other micro powder abrasives in the mortar are mainly taken to a cutting area of a silicon rod by a steel wire running at a high speed in the cutting process, and the silicon rod is cut by the tumbling of the micro powder abrasives. However, multi-line mortar cutting has the following disadvantages:
1) the process time is long and the efficiency is low;
2) the mortar cutting adopts the mixed cutting of oil-based cutting fluid and SiC, which is easy to cause environmental pollution, has higher post-treatment difficulty and higher cost;
3) the cost of single-chip cutting is high;
4) along with the abrasion of the abrasive, the surface quality fluctuation of the semiconductor silicon slice is large;
5) the silicon wafer damage layer caused in the cutting process of the free abrasive is large, and the needed grinding amount is large.
In addition, the cutting capability of the free abrasive is weak, so that the cutting time of the mortar cutting process is long, and the speed of the whole cutter table is low; the wire diameter of the steel wire used for mortar slicing is large, and the steel wire is easily damaged in the free abrasive cutting process.
Disclosure of Invention
Aiming at various defects in the prior art, the semiconductor silicon slicing diamond wire cutting process for the power device is provided, which can improve the silicon rod processing efficiency.
In order to achieve the purpose, the invention provides the following technical scheme:
a semiconductor silicon slicing diamond wire cutting process for a power device is characterized by comprising the following steps:
s1, setting the silicon rod zero point: the bonded silicon rod is suspended right above the wire mesh through an equipment workpiece table, and the position where the lower edge of the silicon rod is tangent to the wire mesh is a zero point;
s2, setting the spraying mode as overflow spraying;
s3, adding cutting fluid;
s4, setting the speed of the workpiece table: the linear running speed of the diamond at the cutting-in stage is 600m/min-700m/min, and the linear acceleration is 3m/s 2- 5m/s 2 The table speed is 350-450 mu m/min; a stage speed pulling-up stage for raising the stage speed to 850 mu m/min; the stage speed of the cutting retracting stage is 550-650 mu m/min, and the linear speed is 800-900 m/min;
s5, setting single-step cycle consumption line: in the wire-consuming stage, the single-step periodic wire consumption is set as Z, the stage speed is set as T, the diameter of the silicon rod is R, the proportionality coefficient is k1, and the feeding position of the workpiece stage is L, so that the single-step periodic wire consumption in the wire-consuming stage is realized
The line consumption of the single step period of the constant line consumption stage is the maximum value of the line consumption pull-up stage; the single-step periodic line loss is set to be Z 'in the line loss reduction stage, the table speed is set to be T', the diameter of the silicon rod is set to be R, the proportionality coefficient is k2, the feeding position of the workpiece table is set to be L ', and the single-step periodic line loss is set to be Z' in the line loss reduction stage
And S6, cutting, pressing the silicon rod from the position of minus 0.5mm at the table speed in the step S4, and cutting the silicon rod by the wire mesh in a reciprocating cutting mode until the cutting is finished.
Further, in step S2, the height from the bottom end of the overflow pipe of the spraying device to the wire mesh is set to be 2.5-4 mm.
Further, in step S3, the cutting fluid is a mixed solution of an organic dispersant and RO pure water.
Further, the volume ratio of the organic dispersant to the RO water is 1: 250-3: 250
Further, in step S3, the initial temperature of the cutting fluid is set to 20 + -2 deg.C, and the flow rate of the cutting fluid is set to 80L/min-100L/min.
Furthermore, in step S4, the wire feeding amount of the blade inserting stage is set to 900m to 1400m, and the feeding amount of the silicon rod in the blade inserting stage is set to 1mm to 2 mm.
Further, in step S6, diamond wires having a diameter of 70 μm were used as the wire mesh.
Further, after cutting, the silicon slices are placed into a pool with degumming agent to carry out degumming, the degumming agent adopts lactic acid, the degumming temperature is 80-90 ℃, and the degumming time is 20 min.
Further, the volume ratio of the lactic acid to the water is lactic acid: 1 in water: 4-6.
Further, after degumming, cleaning the silicon slices, adding an alkaline cleaning agent into water, wherein the volume ratio is as follows: and (5) washing the silicon slices with water at a ratio of 1:20-25, and then drying the silicon slices.
The beneficial effects of the invention are:
1) the diamond wire slice is applied to the small-diameter silicon slice for the power device, the cutting force is stronger, the rapid cutting and thinning are easier to realize, and the cutting mode of cutting the semiconductor silicon slice by the mortar by the diamond wire is replaced.
2) The method is suitable for zero setting, spraying modes and spraying positions of the small-diameter silicon slices for the power device, the TTV mean value of the silicon slices is less than 9 mu m in the cutting process and is reduced by 3 mu m compared with the mortar mean value, and the TTV of the silicon slices is greatly reduced.
3) The method is suitable for the stage speed change rule and the single-step periodic consumption line change rule of the small-diameter silicon slice wafer for the power device, the stage speed change and the single-step periodic consumption line change are firstly related with the silicon rod cutting amount, the cutting efficiency and the surface quality of the silicon slice are increased, the Warp average value of the silicon slice is less than 11 micrometers, and the Warp average value is reduced by 2 micrometers compared with the mass production average value of mortar slices.
4) The water-based cutting fluid is adopted to replace oil-based and SiC mixed cutting fluid, so that the cutting cost is greatly reduced, the production process is more environment-friendly, and the cutting cost of a single chip is reduced by 0.42 yuan/pcs compared with that of a mortar slice.
5) The diameter of a steel wire for cutting is reduced, the utilization rate of the silicon rod is improved, and the cutting rate of the silicon rod is higher than that of mortar by more than 7%.
Detailed Description
In order to make the technical scheme of the invention better understood by those skilled in the art, the technical scheme of the invention is clearly and completely described below. Based on the embodiments in the present application, other similar embodiments obtained by persons of ordinary skill in the art without any creative effort shall fall within the protection scope of the present application.
The invention will be further described with reference to the following preferred embodiments.
The invention relates to a semiconductor silicon slicing diamond wire cutting process for a power device, which cuts by adopting a multi-wire cutting mode and comprises the following steps:
1) and setting the zero point of the silicon rod. The bonded silicon rod is hung right above the wire mesh through an equipment workpiece table, and the position where the lower edge of the silicon rod is tangent to the wire mesh is a zero point during cutting; when the zero point is set, the silicon rod and the wire mesh gap is watched by standing at one side, and the wire mesh is required to be completely free of light transmission at the zero point position, namely, the heads and the tails of the silicon rods are completely free of light transmission.
The coordinate of the starting cutting position of the silicon rod in the process method is-0.5 mm, namely the silicon rod is positioned 0.5mm above the wire mesh. As the cut begins, the silicon rod is pressed down and the silicon rod coordinate gradually increases. Starting from the initial coordinate set by the process of-0.5 mm, the silicon rod is pressed downwards at a certain table speed for cutting, and the silicon rod is completely cut through till the cutting is finished. Meanwhile, the more light that is required to be transmitted at the position of-0.5 mm, the better (the larger the gap, the better, and the guarantee that the wire net is completely far away from the silicon rod).
2) The spraying mode is set to be overflow type spraying, namely, the cutting liquid is filled in a liquid collecting tank of the spraying device and then slowly and uniformly flows to the wire net along the cutting liquid guide plate, and the height from the bottom end of an overflow pipe of the spraying device to the wire net is 2.5-4 mm.
3) Adding cutting fluid. The cutting fluid is a mixed solution of an organic dispersant (containing a defoaming agent) and RO pure water, wherein the volume ratio of the organic dispersant to the RO water is 1: 250-3: 250. setting the initial temperature of the cutting fluid at 20 +/-2 ℃ when the cutting is started, and the spraying flow rate of the cutting fluid to be 80-100L/min.
4) The cutting process is set to be a reciprocating cutting process, namely, a new wire is fed in from a wire inlet end of a wire net for X meters, then a new wire is fed back from a wire outlet end of the wire net for Y meters, X is more than Y, one wire feeding and one wire returning are called as one cycle ending, and X-Y is single-step periodic wire consumption.
5) And setting the speed of the workpiece table. The speed change of the table of the process method is divided into 4 stages, namely a cutter entering stage, a table speed pulling-up stage, a main cutting stage and a cutter retracting stage.
The cutting stage is the first cycle of cutting, the running speed of the diamond wire is 600m/min-700m/min, and the linear acceleration is 3m/s 2- 5m/s 2 The table speed is 350-450 μm/min, the wire feeding amount is 900-1400 m, and the feeding of the silicon rod is 1-2 mm after the cutting stage is finished.
The stage of rapid bench pulling-up is a stage of finishing gradual increase of the background speed at the stage of cutter entering, the stage of rapid bench pulling-up gradually increases the linear speed to 850 mu m/min, the stage of rapid bench pulling-up is finished, and the feeding amount of the silicon rod is 30mm-50 mm.
The main cutting stage is a stage after the stage speed pulling-up stage is finished and before the tool retracting stage is started, the numerical value change of the stage speed is in direct proportion to the change of the cutting amount of the silicon rod in the stage, and the stage speed is firstly reduced and increased. Concretely, if the table speed is T, the diameter of the silicon rod is R, the proportionality coefficient is k, and the feeding position of the workpiece table is L (the feeding position is changed corresponding to different cutting amounts of the silicon rod), the feeding position is L
The cutting closing stage is a stage of gradually reducing the table speed and the linear speed to 550-650 mu m/min and 800-900 m/min before cutting and when the process feed is remained for 25 mm.
6) And setting a single step cycle consuming line. The single-step periodic line loss change of the process method is divided into 3 stages, namely a line loss pull-up stage, a constant line loss stage and a line loss reduction stage.
The wire consumption lifting stage is from the beginning of cutting to the maximum cutting amount position of the silicon rod, the single-step periodic wire consumption is in direct proportion to the cutting amount of the silicon rod in the stage, the single-step periodic wire consumption is set as Z, the stage speed is set as T, the diameter of the silicon rod is set as R, the proportionality coefficient is k1 (constant), the feeding position of the workpiece stage is L (the feeding position corresponds to different cutting amount changes of the silicon rod),
the constant line consumption stage is a stage in which the line consumption amount of the single step period is kept unchanged after the line consumption of the single step period reaches the maximum value, the maximum value of the line consumption of the single step period is kept unchanged, and the feeding amount of the crystal bar in the stage is 20-30 mm.
The wire consumption reduction stage is a stage from the end of the constant wire consumption stage to the end of cutting, the single-step periodic wire consumption in the stage is in direct proportion to the cutting amount of the crystal bar, the single-step periodic wire consumption is set as Z ', the stage speed is set as T ', the diameter of the silicon rod is set as R, the proportionality coefficient is k2 (constant), the feeding position of the workpiece stage is L ' (the feeding position corresponds to different cutting amount changes of the silicon rod),
7) and starting cutting, gradually pressing the silicon rod from the position of minus 0.5mm at the table speed, cutting the silicon rod by the wire mesh in a reciprocating cutting mode, wherein the diameter of a diamond wire used in the cutting process is 70 mu m.
8) After cutting, the silicon slices are placed into a pool with degumming agent to carry out degumming, the degumming agent adopts lactic acid, the degumming temperature is 80-90 ℃, and the degumming time is 20 min. The volume ratio of the lactic acid to the water is lactic acid: water 1: (4-6). After degumming, cleaning the silicon slice, adding an alkaline cleaning agent into water, wherein the volume ratio is as follows: and (20-25), and after the silicon slices are cleaned, carrying out spin-drying treatment on the silicon slices.
While the invention has been described in detail in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A semiconductor silicon slicing diamond wire cutting process for a power device is characterized by comprising the following steps:
s1, setting the silicon rod at zero point: the bonded silicon rod is hung right above the wire mesh through an equipment workpiece table, and the position where the lower edge of the silicon rod is tangent to the wire mesh is a zero point;
s2, setting the spraying mode to be overflow spraying;
s3, adding cutting fluid;
s4, setting the speed of the workpiece table: the running speed of the diamond wire in the cutting-in stage is 600m/min-700m/min, and the running acceleration of the diamond wire is 3m/s 2 -5m/s 2 The table speed is 350-450 mu m/min; a stage speed pulling-up stage for raising the stage speed to 850 mu m/min; the stage speed of the tool retracting stage is 550-650 mu m/min, and the running speed of the diamond wire is 800-900 m/min;
s5, setting a single step cycle consuming line: in the wire consumption lifting stage, the single-step periodic wire consumption is set as Z, the platform speed is set as T, the diameter of the silicon rod is R, the proportionality coefficient is k1, and the feeding position of the workpiece platform is L, so that the single-step periodic wire consumption in the wire consumption lifting stage is realized
The single-step periodic line consumption in the constant line consumption stage is the maximum value in the line consumption pull-up stage; setting the single-step periodic wire consumption as Z ', the table speed as T', the diameter of the silicon rod as R, the proportionality coefficient as k2 and the workpiece table feeding position as L 'in the wire consumption reduction stage, and then setting the single-step periodic wire consumption as Z', the table speed as T ', the silicon rod diameter as R, the workpiece table feeding position as L', the single-step periodic wire consumption in the wire consumption reduction stage
And S6, cutting, pressing the silicon rod from the position of minus 0.5mm at the table speed in the step S4, and cutting the silicon rod by the wire mesh in a reciprocating cutting mode until the cutting is finished.
2. The process of cutting a semiconductor silicon slice and diamond wire for a power device as set forth in claim 1, wherein the height of the bottom end of the overflow pipe of the spray device from the wire mesh is set to be 2.5-4mm in step S2.
3. The process of dicing a semiconductor silicon wafer into diamond wires according to claim 1, wherein the dicing liquid is a mixed solution of an organic dispersant and RO pure water in step S3.
4. The process for slicing diamond wire cutting for semiconductor silicon for power device as claimed in claim 3, wherein the volume ratio of the organic dispersant to RO pure water is 1: 250-3: 250.
5. the process of cutting a semiconductor silicon slice diamond wire for a power device as set forth in claim 4, wherein in step S3, the initial temperature of the cutting fluid is set to 20 ± 2 ℃ and the flow rate of the cutting fluid is set to 80L/min to 100L/min.
6. The process for cutting a semiconductor silicon wafer into diamond wires for power devices as claimed in claim 1, wherein in step S4, the wire feeding amount of the blade-in stage is set to 900m to 1400m, and the silicon rod feeding amount of the blade-in stage is set to 1mm to 2 mm.
7. The process of cutting a diamond wire for cutting a semiconductor silicon wafer for a power device as claimed in claim 1, wherein the wire mesh is a diamond wire having a diameter of 70 μm in step S6.
8. A process for cutting a semiconductor silicon wafer into diamond wires for power devices as claimed in claim 1, wherein after cutting, the silicon wafer is placed in a tank with degumming agent for degumming, the degumming agent is lactic acid, the degumming temperature is 80-90 ℃, and the degumming time is 20 min.
9. The process of cutting a semiconductor silicon slice diamond wire for a power device according to claim 8, wherein the volume ratio of the lactic acid to the water is lactic acid: water 1: 4-6.
10. A semiconductor silicon slice diamond wire cutting process for a power device as claimed in claim 6, wherein after degumming, the silicon slice is cleaned, and an alkaline cleaning agent is added into the water, the volume ratio of the cleaning agent is: and (5) washing the silicon slices with water at a ratio of 1:20-25, and then drying the silicon slices.
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| WO2011032600A1 (en) * | 2009-09-18 | 2011-03-24 | Applied Materials, Inc. | Method for operating a wire saw device |
| CN202045766U (en) * | 2011-04-02 | 2011-11-23 | 苏州协鑫光伏科技有限公司 | Multi-wire cutting machine |
| CN102528953A (en) * | 2011-12-29 | 2012-07-04 | 江西金葵能源科技有限公司 | Diamond wire single-rod multi-wire cutting machine |
| CN102700012A (en) * | 2012-05-28 | 2012-10-03 | 常州华盛恒能光电有限公司 | Method for reducing silicon chip damaged layers during multi-wire cutting |
| JP5769681B2 (en) * | 2012-09-21 | 2015-08-26 | 京セラ株式会社 | Substrate manufacturing method |
| JP6318637B2 (en) * | 2014-01-17 | 2018-05-09 | 日立金属株式会社 | Cutting method of high hardness material with multi-wire saw |
| CN103817811B (en) * | 2014-03-21 | 2016-06-15 | 成都青洋电子材料有限公司 | A kind of multi-line cutting method of silicon rod |
| CN103991140A (en) * | 2014-04-28 | 2014-08-20 | 阳光硅谷电子科技有限公司 | Diamond wire-electrode cutting technology for silicon rod |
| CN107214869B (en) * | 2017-07-20 | 2019-11-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
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| CN108927909A (en) * | 2018-07-20 | 2018-12-04 | 无锡中环应用材料有限公司 | A kind of novel process of silicon wafer machine-shaping |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN109808091B (en) * | 2019-01-30 | 2021-01-26 | 无锡中环应用材料有限公司 | Method for cutting silicon wafer by 55-micron diamond wire |
| CN110181699B (en) * | 2019-05-22 | 2021-05-04 | 江苏吉星新材料有限公司 | Cutting process of sapphire diamond wire multi-line slicing machine |
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| CN110394911B (en) * | 2019-07-26 | 2021-08-06 | 扬州续笙新能源科技有限公司 | Secondary utilization method of diamond wire suitable for silicon wafer production and manufacturing |
| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
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