CN109808091B - Method for cutting silicon wafer by 55-micron diamond wire - Google Patents
Method for cutting silicon wafer by 55-micron diamond wire Download PDFInfo
- Publication number
- CN109808091B CN109808091B CN201910091376.0A CN201910091376A CN109808091B CN 109808091 B CN109808091 B CN 109808091B CN 201910091376 A CN201910091376 A CN 201910091376A CN 109808091 B CN109808091 B CN 109808091B
- Authority
- CN
- China
- Prior art keywords
- wire
- cutting
- wheel
- diamond
- movement speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention relates to a method for cutting a silicon wafer by 55 mu m diamond wires, which comprises the following steps: a cutting wire net is distributed in a cutting area between the upper wire wheel and the lower wire wheel, the wire net is arranged in a Z shape, the distance between the two wire wheels is M, the distance between the upper wire wheel and the lower wire wheel is N, and M is equal to N; setting the tension and the running speed of a cutting wire net and the movement speed of a silicon rod: in the initial processing stage, the wire mesh tension is 8N, the workpiece movement speed is 2.3-2.4mm/min, the diamond wire movement speed is 600m/min, and cooling liquid is added; the wire net tension is 9-10N in the continuous processing process, the workpiece movement speed is 2.4mm/min, and the diamond wire movement speed is 1500 m/min; at the end stage, the wire mesh tension is 12N, the workpiece movement speed is 1.0mm/min, and the diamond wire movement speed is 1300-1500 m/min; setting the flow rate of the cooling liquid: the initial processing stage is 50-55kg/min, the continuous processing stage is 500kg/min, and the end stage is 50-55 kg/min; the invention matches the cutting strength of the wire bow of the cutting wire net and the extremely thin wire, thereby solving the problem of wire breakage.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon processing, in particular to a method for cutting a silicon wafer by a 55-micrometer diamond wire.
Background
In the technical field of diamond wire cutting of monocrystalline silicon wafers, the wire diameter of a diamond wire is closely related to cutting efficiency and slicing quality, and production efficiency and yield can be greatly improved by adopting an extremely thin wire (the diameter is less than 60 mu m), but in the actual production process, breaking force born by the thinned diamond wire is reduced, so that the phenomenon of wire breakage in the cutting process is easily caused, and the breakage and waste of the silicon wafers are caused.
Disclosure of Invention
The applicant provides a method for cutting a silicon wafer by a 55-micron diamond wire, aiming at the defects in the prior art, so as to solve the technical problems of wire breakage of a diamond wire and silicon wafer breakage on the premise of ensuring the cutting efficiency and the yield.
The technical scheme adopted by the invention is as follows:
a method for cutting a silicon wafer by a 55-micron diamond wire utilizes the diamond wire with the outer diameter of 55 microns to cut a single crystal silicon rod, and comprises the following steps:
the first step is as follows: inspecting and cleaning the cured silicon rod, and placing the silicon rod on a workbench;
the second step is that: a cutting wire net is distributed in a cutting area between the upper wire wheel and the lower wire wheel, a diamond wire is unwound from the upper wire wheel, and is wound by the lower wire wheel after passing through the two wire guide wheels, the wire net is arranged in a Z shape, the distance between the two wire guide wheels is M, the distance between the upper wire wheel and the lower wire wheel is N, and M is equal to N;
the third step: setting the tension and the running speed of a cutting wire net and the movement speed of a silicon rod: in the initial processing stage, the wire mesh tension is 8N, the workpiece movement speed is 2.3-2.4mm/min, the diamond wire movement speed is 600m/min, and cooling liquid is added; the wire net tension is 9-10N in the continuous processing process, the workpiece movement speed is 2.4mm/min, and the diamond wire movement speed is 1500 m/min; at the end stage, the wire mesh tension is 9N, the workpiece movement speed is 1.0mm/min, and the diamond wire movement speed is 1300-1500 m/min;
the fourth step: setting the flow rate of the cooling liquid: the initial processing stage is 50-55kg/min, the continuous processing stage is 500kg/min, and the end stage is 50-55 kg/min.
The fifth step: the horizontal movement of the cutting wire mesh is matched with the vertical movement of the single crystal silicon rod on the workbench, and the single crystal silicon rod is cut into silicon wafers.
The horizontal interval between the two wire guide wheels is 2/3 of the horizontal interval between the upper wire wheel and the lower wire wheel.
The distance between the two wire guide wheels was 400 mm.
The diamond wire is an electroplated diamond wire, the grain diameter of diamond grains on the electroplated diamond wire is 6-8 mu m, and the toughness yielding height of the diamond grains is 4-6 mu m.
The silicon single crystal rod is a single body or a whole body bonded by a resin plate, and the total length of the silicon single crystal rod is 800-1200 mm.
The outer wheel diameter of the wire guiding wheel is less than or equal to that of the upper wheel and the lower wheel, and the outer wheel diameter of the upper wheel and the lower wheel is 100-120 mm.
The diameter of the outer wheel of the wire guide wheel is 80-100 mm.
The temperature of the cooling liquid is 18-20 ℃.
The invention has the following beneficial effects:
the invention adjusts the wire mesh tension and the running speed in different cutting stages, matches the wire bow of the cutting wire mesh with the cutting strength of the extremely thin wire, particularly strengthens the running speed in the initial stage and the finishing stage, ensures that the cutting efficiency is improved when the maximum cutting strength and the large wire bow are in the beginning, reduces the flow of the cooling liquid in the initial stage, and reduces the interference of the cooling liquid to the wire mesh tension; as the abrasion of the steel wire increases, the tension and the running speed of the wire net are adjusted, the cooling liquid amount is increased, and the wire breakage rate is effectively reduced; in the end stage, along with the accumulation of abrasion, the tension and the running speed are readjusted, so that the wire bow and the cutting strength of the wire net can be enhanced; the distance between the upper wire wheel and the lower wire wheel and the distance between the two wire guide wheels are reasonably set, the Z-shaped arrangement of the wire net is combined, the wire arch of the wire net is effectively controlled, the processing time of the silicon rod with the length within the range of 800 plus materials and 1200mm is shortened to 73-75min, the utilization rate of the diamond wire is greatly improved, the wire breakage rate is reduced, and the production cost is saved.
Detailed Description
The first embodiment is as follows:
the method for cutting a silicon wafer by using a 55 μm diamond wire according to the embodiment cuts a single crystal silicon rod by using a diamond wire with an outer diameter of 55 μm, and comprises the following steps:
the first step is as follows: inspecting and cleaning the cured silicon rod, and placing the silicon rod on a workbench;
the second step is that: a cutting wire net is distributed in a cutting area between the upper wire wheel and the lower wire wheel, a diamond wire is unwound from the upper wire wheel, and is wound by the lower wire wheel after passing through the two wire guide wheels, the wire net is arranged in a Z shape, the distance between the two wire guide wheels is 400mm, and the distance between the upper wire wheel and the lower wire wheel is 400 mm;
the third step: setting the tension and the running speed of a cutting wire net and the movement speed of a silicon rod: in the initial processing stage, the wire mesh tension is 8N, the workpiece movement speed is 2.3mm/min, the diamond wire movement speed is 600m/min, and cooling liquid is added; the wire net tension is 9N in the continuous processing process, the workpiece moving speed is 2.4mm/min, and the diamond wire moving speed is 1500 m/min; at the end stage, the wire mesh tension is 9N, the workpiece movement speed is 1.0mm/min, and the diamond wire movement speed is 1300 m/min;
the fourth step: setting the flow rate of the cooling liquid: the initial processing stage is 50kg/min, the continuous processing stage is 500kg/min, and the end stage is 50 kg/min.
The fifth step: the horizontal movement of the cutting wire mesh is matched with the vertical movement of the single crystal silicon rod on the workbench, and the single crystal silicon rod is cut into silicon wafers.
The horizontal spacing between the two wire guide wheels is 2/3 of the horizontal spacing between the upper and lower wire guide wheels.
The diamond wire is an electroplated diamond wire, the grain diameter of diamond grains on the electroplated diamond wire is 6-8 mu m, and the toughness height of the diamond grains is 4-6 mu m.
The silicon single crystal rod is a single body or an integral body bonded by a resin plate, and the total length of the silicon single crystal rod is 800 mm.
The outer wheel diameter of the wire guiding wheel is less than or equal to that of the upper wire wheel and the lower wire wheel, and the outer wheel diameter of the upper wire wheel and the lower wire wheel is 100-120 mm.
The diameter of the outer wheel of the wire guide wheel is 80-100 mm.
The temperature of the cooling liquid is 18-20 ℃.
Example two:
the method for cutting a silicon wafer by using a 55 μm diamond wire according to the embodiment cuts a single crystal silicon rod by using a diamond wire with an outer diameter of 55 μm, and comprises the following steps:
the first step is as follows: inspecting and cleaning the cured silicon rod, and placing the silicon rod on a workbench;
the second step is that: a cutting wire net is distributed in a cutting area between the upper wire wheel and the lower wire wheel, a diamond wire is unwound from the upper wire wheel, and is wound by the lower wire wheel after passing through the two wire guide wheels, the wire net is arranged in a Z shape, the distance between the two wire guide wheels is 500mm, and the distance between the upper wire wheel and the lower wire wheel is 500 mm;
the third step: setting the tension and the running speed of a cutting wire net and the movement speed of a silicon rod: in the initial processing stage, the wire mesh tension is 8N, the workpiece movement speed is 2.3mm/min, the diamond wire movement speed is 600m/min, and cooling liquid is added; the wire net tension is 9N in the continuous processing process, the workpiece moving speed is 2.4mm/min, and the diamond wire moving speed is 1500 m/min; at the end stage, the wire mesh tension is 9N, the workpiece movement speed is 1.0mm/min, and the diamond wire movement speed is 1500 m/min;
the fourth step: setting the flow rate of the cooling liquid: the initial processing stage is 55kg/min, the continuous processing stage is 500kg/min, and the end stage is 55 kg/min.
The fifth step: the horizontal movement of the cutting wire mesh is matched with the vertical movement of the single crystal silicon rod on the workbench, and the single crystal silicon rod is cut into silicon wafers.
The horizontal spacing between the two wire guide wheels is 2/3 of the horizontal spacing between the upper and lower wire guide wheels.
The diamond wire is an electroplated diamond wire, the grain diameter of diamond grains on the electroplated diamond wire is 6-8 mu m, and the toughness height of the diamond grains is 4-6 mu m.
The silicon single crystal rod is a single body or an integral body bonded by a resin plate, and the total length thereof is 1200 mm.
The outer wheel diameter of the wire guiding wheel is less than or equal to that of the upper wire wheel and the lower wire wheel, and the outer wheel diameter of the upper wire wheel and the lower wire wheel is 100-120 mm.
The diameter of the outer wheel of the wire guide wheel is 80-100 mm.
The temperature of the cooling liquid is 18-20 ℃.
Through the implementation process, the wire mesh bow in the initial processing stage is improved, the high cutting strength of 55 mu m wires is matched, the cutting efficiency in the initial stage and the finishing stage is greatly improved, the wire stiffness in the continuous operation stage is enhanced through the adjustment of the wire mesh tension and the operation speed, the wire breakage rate is reduced, the yield is improved, and the production cost is saved.
The above description is intended to be illustrative and not restrictive, and the scope of the invention is defined by the appended claims, which may be modified in any manner within the scope of the invention.
Claims (7)
1. A method for cutting a silicon wafer by a 55-micron diamond wire utilizes the diamond wire with the outer diameter of 55 microns to cut a single crystal silicon rod, and is characterized in that: the method comprises the following steps:
the first step is as follows: inspecting and cleaning the cured silicon rod, and placing the silicon rod on a workbench;
the second step is that: a cutting wire net is distributed in a cutting area between the upper wire wheel and the lower wire wheel, a diamond wire is unwound from the upper wire wheel and wound by the lower wire wheel, the wire net is arranged in a Z shape, the distance between the two wire wheels is M, the distance between the upper wire wheel and the lower wire wheel is N, and M is equal to N; the diamond wire is an electroplated diamond wire, the grain size of diamond grains on the electroplated diamond wire is 6-8 mu m, and the toughness yielding height of the diamond grains is 4-6 mu m;
the third step: setting the tension and the running speed of a cutting wire net and the movement speed of a silicon rod: in the initial processing stage, the wire mesh tension is 8N, the workpiece movement speed is 2.3-2.4mm/min, and the diamond wire movement speed is 600 m/min; the wire net tension is 9-10N in the continuous processing process, the workpiece movement speed is 2.4mm/min, and the diamond wire movement speed is 1500 m/min; at the end stage, the wire mesh tension is 9N, the workpiece movement speed is 1.0mm/min, and the diamond wire movement speed is 1300-1500 m/min;
the fourth step: setting the flow rate of the cooling liquid: the initial processing stage is 50-55kg/min, the continuous processing stage is 500kg/min, and the end stage is 50-55 kg/min;
the fifth step: and cutting, namely cutting the monocrystalline silicon rod into silicon wafers by matching the horizontal motion of the cutting wire net with the vertical motion of the monocrystalline silicon rod on the workbench.
2. A method of wire-cutting a silicon wafer with 55 μm diamond according to claim 1, wherein: the horizontal interval between the two wire guide wheels is 2/3 of the horizontal interval between the upper wire wheel and the lower wire wheel.
3. A method of wire-cutting a silicon wafer with 55 μm diamond according to claim 1, wherein: the distance between the two wire guide wheels was 400 mm.
4. A method of wire-cutting a silicon wafer with 55 μm diamond according to claim 1, wherein: the silicon single crystal rod is a single body or a whole body bonded by a resin plate, and the total length of the silicon single crystal rod is 800-1200 mm.
5. A method of wire-cutting a silicon wafer with 55 μm diamond according to claim 1, wherein: the outer wheel diameter of the wire guiding wheel is less than or equal to that of the upper wire wheel and the lower wire wheel, and the outer wheel diameter of the upper wire wheel and the lower wire wheel is 100-120 mm.
6. The method for wire-cutting a silicon wafer with 55 μm diamond according to claim 5, wherein: the diameter of the outer wheel of the wire guide wheel is 80-100 mm.
7. A method of wire-cutting a silicon wafer with 55 μm diamond according to claim 1, wherein: the temperature of the cooling liquid is 18-20 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910091376.0A CN109808091B (en) | 2019-01-30 | 2019-01-30 | Method for cutting silicon wafer by 55-micron diamond wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910091376.0A CN109808091B (en) | 2019-01-30 | 2019-01-30 | Method for cutting silicon wafer by 55-micron diamond wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109808091A CN109808091A (en) | 2019-05-28 |
| CN109808091B true CN109808091B (en) | 2021-01-26 |
Family
ID=66606013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910091376.0A Active CN109808091B (en) | 2019-01-30 | 2019-01-30 | Method for cutting silicon wafer by 55-micron diamond wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109808091B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110142886B (en) * | 2019-06-28 | 2021-04-06 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon wafer by diamond wire |
| CN110497544A (en) * | 2019-08-07 | 2019-11-26 | 江苏高照新能源发展有限公司 | A kind of cutting method applied to ultralow TTV monocrystalline silicon piece |
| CN112078038B (en) * | 2020-07-30 | 2022-07-22 | 乐山高测新能源科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112078041B (en) * | 2020-07-30 | 2022-07-26 | 乐山高测新能源科技有限公司 | Cutting process for electroplated diamond wire after thinning |
| CN112157831B (en) * | 2020-07-30 | 2022-07-26 | 乐山高测新能源科技有限公司 | Semiconductor silicon slicing diamond wire cutting process for power device |
| CN112045874A (en) * | 2020-09-07 | 2020-12-08 | 成都青洋电子材料有限公司 | Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer |
| TWI811632B (en) * | 2021-02-08 | 2023-08-11 | 環球晶圓股份有限公司 | Method of slicing ingot |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5890481A (en) * | 1996-04-01 | 1999-04-06 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method and apparatus for cutting diamond |
| CN101628452B (en) * | 2009-07-31 | 2011-09-28 | 宁波升日太阳能电源有限公司 | Method for cutting silicon chips |
| DE102013201932A1 (en) * | 2013-02-06 | 2014-08-07 | Robert Bosch Gmbh | Apparatus and method for machining a workpiece |
| CN107214869B (en) * | 2017-07-20 | 2019-11-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107718333A (en) * | 2017-08-24 | 2018-02-23 | 天津市环欧半导体材料技术有限公司 | A kind of technique of 60um diameters Buddha's warrior attendant wire cutting silicon |
| CN108927909A (en) * | 2018-07-20 | 2018-12-04 | 无锡中环应用材料有限公司 | A kind of novel process of silicon wafer machine-shaping |
-
2019
- 2019-01-30 CN CN201910091376.0A patent/CN109808091B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109808091A (en) | 2019-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109808091B (en) | Method for cutting silicon wafer by 55-micron diamond wire | |
| EP2508317B1 (en) | Method for cutting workpiece with wire saw | |
| CN207373492U (en) | A kind of cutting mechanism for improving carborundum crystal bar cutting quality | |
| CN108927909A (en) | A kind of novel process of silicon wafer machine-shaping | |
| KR20140106583A (en) | Method for cutting work piece | |
| CN112060376A (en) | Silicon chip wire cut electrical discharge machining convenient to adjust | |
| CN205552917U (en) | Coping saw cutting frock of silicon rod | |
| CN204566418U (en) | Numerical control sapphire multistation single line excavation machine cable pulling-pushing device | |
| KR102100839B1 (en) | Workpiece cutting method | |
| CN102729348A (en) | Multi-wire cutting machine | |
| CN218951531U (en) | Reciprocating thickening device for electroplating of diamond wire saw | |
| CN102172812B (en) | Hollow aluminium division bar continuous moulding method | |
| JPH0917755A (en) | Cutting method of iii-v compound semiconductor crystal | |
| CN216095661U (en) | Ultrahigh-strength diamond wire bus adjusting device | |
| TW201632301A (en) | Cutting method for workpiece | |
| KR20210113204A (en) | Workpiece cutting method and wire saw | |
| CN108927908B (en) | Cutting method for wire cutting machine | |
| CN211079383U (en) | Vertical wire winding type diamond wire saw production device | |
| CN210679216U (en) | Pulley angle adjusting device suitable for polycrystalline silicon diamond wire cutting | |
| KR20130079709A (en) | Wire saw apparatus and coolant feeding nozzle for it | |
| CN113828651B (en) | Ultra-high strength diamond wire bus ring adjusting method | |
| CN115958709B (en) | Multi-line cutting method for silicon carbide wafer | |
| CN111546519A (en) | Cutting process for improving geometric parameters of large-diameter silicon wafer | |
| CN103240289A (en) | Zinc-coated steel wire reprocessing technology | |
| CN202071234U (en) | Guide wheel device for processing silicon wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |