CN112045874A - Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer - Google Patents
Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer Download PDFInfo
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- CN112045874A CN112045874A CN202010929485.8A CN202010929485A CN112045874A CN 112045874 A CN112045874 A CN 112045874A CN 202010929485 A CN202010929485 A CN 202010929485A CN 112045874 A CN112045874 A CN 112045874A
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- wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a multi-wire cutting process suitable for semiconductor monocrystalline silicon wafers, which is characterized in that a plurality of 52 wires are used for slicing a monocrystalline silicon rod, the feeding speed V1 of the 52 wires is 0.35-1.00 mm/min, the cutting speed V2 of the 52 wires is 1300-1400 m/min, the diameter of the monocrystalline silicon rod is 3-5 inches, the pulling force N1 of the outlet ends of the 52 wires is 8N, the pulling force N2 of the take-up ends of the 52 wires is 8-8.5N, the cutting temperature of the 52 wires is 19-21 ℃, and the 52 wires are used for cutting, so that waste of raw materials of the monocrystalline silicon rod is reduced.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon piece preparation, in particular to a process suitable for multi-wire cutting of a semiconductor monocrystalline silicon piece.
Background
The monocrystalline silicon piece is a crystal with a basically complete lattice structure, has different properties in different directions, is a good semiconductor material, is widely used for manufacturing semiconductor devices, solar cells and the like, is an active non-metallic element, is an important component of the crystal material, is in the front of the development of new materials, and needs to be sliced in the production process of the monocrystalline silicon piece to obtain the required monocrystalline silicon piece, the traditional cutting process adopts 70 lines, so that the loss of the raw material of the monocrystalline silicon piece is large, and the precision of the cut monocrystalline silicon piece is not high, thereby increasing the grinding loss in the later period.
Disclosure of Invention
The invention aims to provide a process suitable for multi-wire cutting of a semiconductor monocrystalline silicon wafer, which solves the defects of the prior art.
The invention is realized by the following technical scheme:
a multi-wire cutting process suitable for semiconductor monocrystalline silicon wafers comprises the steps of slicing a monocrystalline silicon rod by using a plurality of 52 wires, wherein the feeding speed V1 of the plurality of 52 wires is 0.35-1.00 mm/min, the cutting speed V2 of the plurality of 52 wires is 1300-1400 m/min, the diameter of the monocrystalline silicon rod is 3-5 inches, the pulling force N1 of the outlet ends of the plurality of 52 wires is 8N 1N, the pulling force N2 of the take-up ends of the plurality of 52 wires is 8-8.5N, and the cutting temperature of the plurality of 52 wires is 19-21 ℃.
The 52 wire of the present invention is a plated diamond wire having a diameter of 52 μm.
The feed speed V1 of the 52-wire line according to the invention is the speed at which the 52-wire line moves vertically downwards along the cross section of the single crystal silicon rod, i.e. can also be regarded as the speed of the single crystal silicon rod vertically upwards.
The cutting speed V2 of the 52-wire in the invention is the speed of the 52-wire moving along the radial direction of the cross section of the single crystal silicon rod, namely the take-up speed of the 52-wire.
The diameter of the single crystal silicon rod is controlled to control the cutting time of the single crystal silicon rod, thereby preventing the cutting line from cutting for a long time under high strength, and consequently, the service life is shortened.
The pulling force N1 of the outgoing line end and the pulling force N2 of the take-up line end of the 52 lines are controlled, so that the situation that the cutting line is broken due to too large pulling force, too small pulling force and insufficient cutting precision are avoided, namely the cutting line slightly shakes at the outgoing line end, and the cutting process is influenced.
The feeding speed V1 and the cutting speed V2 of a plurality of 52 wires are controlled, so that the temperature of the 52 wires is controlled within the range of 19-21 ℃, and long-term normal use of the 52 wires is guaranteed.
Further, the feeding speed V1 of the plurality of 52 wires is 0.35 mm/min.
Further, when the single crystal silicon rod is sliced using the plurality of 52 lines, a cutting liquid is dropped onto the plurality of 52 lines.
Further, the take-up end pulling force N2 of the 52 wires (1) is 8N.
Further, the cutting temperature of the plurality of 52 wires (1) is 19 ℃.
Further, the feeding speed V1 of the plurality of 52 wires (1) is 0.35/min, and the cutting speed V2 of the plurality of 52 wires (1) is 1300/min.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the process suitable for multi-wire cutting of the semiconductor monocrystalline silicon wafer, the 52-wire cutting is adopted, so that the waste of the raw materials of the monocrystalline silicon rod is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of the structure of the present invention.
Reference numbers and corresponding part names in the drawings:
1-52 lines, 2-single crystal silicon rod.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
The invention will be further described with reference to the accompanying drawings, but the scope of the invention is not limited to the following.
Example 1
As shown in figure 1, the process for multi-wire cutting of the semiconductor monocrystalline silicon wafer comprises the steps of slicing a monocrystalline silicon rod 2 by using a plurality of 52 wires 1, wherein the feeding speed V1 of the plurality of 52 wires 1 is 0.35-1.00 mm/min, the cutting speed V2 of the plurality of 52 wires 1 is 1300-1400 m/min, the diameter of the monocrystalline silicon rod 2 is 3-5 inches, the outlet end tension N1 of the plurality of 52 wires 1 is 8N, the take-up end tension N2 of the plurality of 52 wires 1 is 8-8.5N, and the cutting temperature of the plurality of 52 wires 1 is 19-21 ℃.
The 52-wire 1 according to the invention is a plated diamond wire with a diameter of 52 μm.
The feeding speed V1 of the wire 1 of the invention 52 is the speed at which the wire 1 of the wire 52 moves vertically downward along the cross section of the single crystal silicon rod 2, i.e., can also be regarded as the speed at which the single crystal silicon rod 2 moves vertically upward.
The cutting speed V2 of the 52-wire 1 is the speed of the 52-wire moving along the radial direction of the cross section of the single crystal silicon rod 2, namely the take-up speed of the 52-wire.
The diameter of the single crystal silicon rod 2 is controlled to control the cutting time of the single crystal silicon rod 2, thereby preventing the cutting line from being cut at a high strength for a long time, resulting in a shortened service life.
The pulling force N1 of the outgoing line end and the pulling force N2 of the take-up line end of the 52-line 1 are controlled, so that the situation that the cutting line is broken due to too large pulling force, too small pulling force and insufficient cutting precision are avoided, namely, the cutting line slightly shakes at the outgoing line end, and the cutting process is influenced.
The feeding speed V1 and the cutting speed V2 of a plurality of 52 wires 1 are controlled, so that the temperature of the 52 wires is controlled within the range of 19-21 ℃, and long-term normal use of the 52 wires is guaranteed.
Example 2
Based on example 1, the feeding speed V1 of the plurality of 52 threads 1 was 0.35 mm/min.
When the single crystal silicon rod 2 is sliced using the plurality of 52 wires 1, a cutting liquid is dropped onto the plurality of 52 wires 1.
Example 3
A process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafers comprises the steps of slicing a monocrystalline silicon rod 2 by using a plurality of 52 wires 1, wherein the feeding speed V1 of the plurality of 52 wires 1 is 0.35mm/min, the cutting speed V2 of the plurality of 52 wires 1 is 1300m/min, the diameter of the monocrystalline silicon rod 2 is 3 inches, the outlet end tension N1 of the plurality of 52 wires 1 is 8 newtons, the take-up end tension N2 of the plurality of 52 wires 1 is 8 newtons, and the cutting temperature of the plurality of 52 wires 1 is 19 ℃.
Example 4
A process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafers comprises the steps of slicing a monocrystalline silicon rod 2 by using a plurality of 52 wires 1, wherein the feeding speed V1 of the plurality of 52 wires 1 is 1.00mm/min, the cutting speed V2 of the plurality of 52 wires 1 is 1400m/min, the diameter of the monocrystalline silicon rod 2 is 5 inches, the pulling force N1 of the outlet end of the plurality of 52 wires 1 is 8 newtons, the pulling force N2 of the take-up end of the plurality of 52 wires 1 is 8.5 newtons, and the cutting temperature of the plurality of 52 wires 1 is 21 DEG C
According to the process suitable for multi-wire cutting of the semiconductor monocrystalline silicon wafer, the 52 wire 1 is used for cutting, so that waste of raw materials of the monocrystalline silicon rod 2 is reduced.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. The process is suitable for multi-wire cutting of semiconductor monocrystalline silicon wafers and is characterized in that a plurality of 52 wires (1) are used for slicing the monocrystalline silicon rod (2), the feeding speed V1 of the 52 wires (1) is 0.35-1.00 mm/min, the cutting speed V2 of the 52 wires (1) is 1300-1400 m/min, the diameter of the monocrystalline silicon rod (2) is 3-5 inches, the outlet end tension N1 of the 52 wires (1) is 8N 1N, the take-up end tension N2 of the 52 wires (1) is 8-8.5N, and the cutting temperature of the 52 wires (1) is 19-21 ℃.
2. The process for multi-wire cutting of a semiconductor single-crystal silicon wafer according to claim 1, wherein the feeding speed V1 of the 52 wires (1) is 0.35 mm/min.
3. The process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafers as claimed in claim 1, wherein when the plurality of 52 wires (1) are used for cutting the monocrystalline silicon rod (2), a cutting fluid is dripped on the plurality of 52 wires (1).
4. The process for multi-wire cutting of the semiconductor monocrystalline silicon piece is characterized in that the take-up end pulling force N2 of the 52 wires (1) is 8N.
5. The process for multi-wire cutting of a semiconductor single-crystal silicon wafer according to claim 1, wherein the cutting temperature of the 52 wires (1) is 19 ℃.
6. The process for multi-wire cutting of the semiconductor single crystal silicon wafer according to claim 1, wherein the feeding speed V1 of the 52 wires (1) is 0.35/min, and the cutting speed V2 of the 52 wires (1) is 1300/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010929485.8A CN112045874A (en) | 2020-09-07 | 2020-09-07 | Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010929485.8A CN112045874A (en) | 2020-09-07 | 2020-09-07 | Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer |
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| CN112045874A true CN112045874A (en) | 2020-12-08 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268025A (en) * | 1998-03-23 | 1999-10-05 | Sumitomo Metal Mining Co Ltd | Cutting method for alc semi-plastic body |
| CN102328353A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cutting process of silicon single crystal rods |
| CN103350460A (en) * | 2013-07-16 | 2013-10-16 | 锦州阳光能源有限公司 | Cutting technology for improving slice production rate of monocrystalline silicon and device of cutting technology |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN109808091A (en) * | 2019-01-30 | 2019-05-28 | 无锡中环应用材料有限公司 | A kind of method of 55 μm of silicon wafer cut by diamond wire |
-
2020
- 2020-09-07 CN CN202010929485.8A patent/CN112045874A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268025A (en) * | 1998-03-23 | 1999-10-05 | Sumitomo Metal Mining Co Ltd | Cutting method for alc semi-plastic body |
| CN102328353A (en) * | 2011-08-12 | 2012-01-25 | 无锡尚品太阳能电力科技有限公司 | Cutting process of silicon single crystal rods |
| CN103350460A (en) * | 2013-07-16 | 2013-10-16 | 锦州阳光能源有限公司 | Cutting technology for improving slice production rate of monocrystalline silicon and device of cutting technology |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN109808091A (en) * | 2019-01-30 | 2019-05-28 | 无锡中环应用材料有限公司 | A kind of method of 55 μm of silicon wafer cut by diamond wire |
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