CN102328353A - Cutting process of silicon single crystal rods - Google Patents
Cutting process of silicon single crystal rods Download PDFInfo
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- CN102328353A CN102328353A CN201110230936A CN201110230936A CN102328353A CN 102328353 A CN102328353 A CN 102328353A CN 201110230936 A CN201110230936 A CN 201110230936A CN 201110230936 A CN201110230936 A CN 201110230936A CN 102328353 A CN102328353 A CN 102328353A
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Abstract
The invention relates to a cutting process of silicon single crystal rods, which comprises the following steps of: selecting the silicon single crystal round rods with the length of 170 to 500mm and the diameter of 166.5 to 173mm and vertically adhering the silicon single crystal round rods on a crystal support of a cutting machine by viscose; magnetizing to fix the crystal support and the silicon single crystal round rods; calibrating a connecting positioning table, setting processing cutting parameters and starting the cutting machine to carry out cutting with sand; carrying out degumming on cut semi-finished products, removing flaw pieces and separating the crystal support; and inspecting the semi-finished products which are subjected to degumming and crystal support separation treatment and switching qualified products into other working procedures. In the invention, the viscosity and the density of mortar are improved, so that the sand carrying capability is strengthened, the feeding speed is accelerated and the feeding amount of a new line is reduced, and thus, the cutting effect is changed excellent, the qualification rate is greatly improved and the working efficiency of the machine is greatly improved; and after a distance between main rollers is modified, even though sand is carried insufficiently in the cutting process, the overall size can also be ensured to be controlled in a range of a tolerance value.
Description
Technical field
The present invention relates to the monocrystalline silicon piece production technology in photovoltaic technology field, specifically a kind of butting technique of silicon single crystal rod.
Background technology
As the key technology of silicon chip production upstream, but advantage such as the novel silicon chip multifibres cutting technique that emerges in recent years has that the cutting surface quality is high, the high cut lengths of cutting efficiency are big and following process is convenient.Japan NTC butt machine is a common equipment of realizing the multifibres cutting.
Use in the conventional process of NTC butt machine cutting silicon single crystal rod, mortar viscosity is 38-42mpa.s, and slurry density is 1.70-1.72g/cm3; Ew line is put to amount and is 25-30m/min; Line of cut average speed is 600-700m/min; Feed speed is 600-650um/min.
When adopting above-mentioned technological parameter to produce; Continuously three batches of rear stability fluctuation ratios of cutting are bigger, and first batch of size after surpassing the about ± 0.8, the 3rd batch with the 3rd batch of cut lengths error is often above tolerance standard; Gradient surpasses more than+0.6 especially up and down; Qualification rate only has only about 90%, and (about unit length 300mm) needs to have increased production cost through could be qualified after the reconditioning once more.
Summary of the invention
The present invention is directed to the deficiency of above-mentioned prior art, the butting technique of the silicon single crystal rod that a kind of cutting accuracy is high, qualification rate is high is provided.
According to technical scheme provided by the invention: a kind of butting technique of silicon single crystal rod may further comprise the steps:
(1) chooses length between 170-500mm; The monocrystalline silicon pole of diameter between 166.5-173mm; The monocrystalline silicon pole vertically is bonded in the crystalline substance holder of butt machine with viscose glue and cooling at normal temperatures; The viscose glue temperature is 350-400 ℃, and the vertical missing angle of monocrystalline silicon pole is in 90 ° ± 1.5 °;
(2) the crystalline substance holder of butt machine and monocrystalline silicon pole are placed on the butt machine and add on the magnetic workbench, number record adds fixing brilliant holder of magnetic and monocrystalline silicon pole;
(3) calibration connects positioning table, and the main roller spacing of butt machine is modified to 125.3-125.5mm, sets the processing cutting parameter; Wherein, mortar viscosity is 42-45mpa.s, and slurry density is 1.73-1.78g/cm3; Mortar temperature is 24.5-25.5 ℃, and the mortar flow is 110L/min-120L/min; Ew line is put to amount and is 15-25m/min; Line of cut average speed is 650-750m/min; Cutting speed is 650-880 μ m/min; Start the butt machine then and be with the sand cutting;
(4) with the semi-finished product after the above-mentioned cutting transfer in the 32-35 ℃ of warm water place 10-15min after, the hot water of putting into 65-70 ℃ again comes unstuck, and removes flaw-piece and separates brilliant holder;
(5) the above-mentioned process of check is come unstuck and is separated the semi-finished product after brilliant holder is handled, and certified products change other operations over to.
The configuration of said mortar: at first F360 carborundum and No. 800 carborundum are mixed into mixed sand by 6: 4 weight ratio; The carborundum particle diameter is 14-15um; Then above-mentioned mixed sand is mixed by 1.1: 1 weight ratio with polyethylene glycol and stir, be configured to mortar.
Compared with present technology the present invention has the following advantages: mortar viscosity, density increase, and band sand ability is strengthened, and feed speed is accelerated; Ew line is put to amount and is reduced; Thereby cutting effect is become well, and qualification rate increases substantially, and has greatly improved the operating efficiency of machine; The main roller spacing even band sand is not enough in the cutting, also can guarantee that whole dimension is controlled in the tolerance value through after revising.
The specific embodiment
Below in conjunction with specific embodiment the present invention is further described.
Embodiment 1
A kind of butting technique of silicon single crystal rod may further comprise the steps:
(1) choosing length is 300mm; Diameter is the monocrystalline silicon pole of 170mm; The monocrystalline silicon pole vertically is bonded in the crystalline substance holder of butt machine with viscose glue and cooling at normal temperatures, the viscose glue temperature is 400 ℃, and the vertical missing angle of monocrystalline silicon pole is in 90 ° ± 1.5 °;
(2) the crystalline substance holder of butt machine and monocrystalline silicon pole are placed on the butt machine and add on the magnetic workbench, number record adds fixing brilliant holder of magnetic and monocrystalline silicon pole, adds magnetic 10 seconds with magnetizer, continuous 3 times;
(3) calibration connects positioning table, and the main roller spacing of butt machine is modified to 125.3mm, sets the processing cutting parameter, and wherein, mortar viscosity is 42mpa.s, and slurry density is 1.75g/cm3; Mortar temperature is 25 ℃; The mortar flow is 110L/min; Ew line is put to amount and is 20m/min; Line of cut average speed is 680m/min; Cutting speed is 750 μ m/min; Start the butt machine then and be with the sand cutting;
(4) with the semi-finished product after the above-mentioned cutting transfer in 35 ℃ of warm water place 15min after, the hot water of putting into 70 ℃ again comes unstuck, and removes flaw-piece and separates brilliant holder;
(5) the above-mentioned process of check is come unstuck and is separated the semi-finished product after brilliant holder is handled, and through check, this semi-finished product length of side tolerance is ± 0.5mm; The vertical missing degree is in 90 ° ± 1.5 °; Surface smoothness is ▽ 8, meets the butt standard-required fully, can change other operational sequences over to.
The configuration of mortar in the step (3): at first F360 carborundum and No. 800 carborundum are mixed into mixed sand by 6: 4 weight ratio; The carborundum particle diameter is 14-15um; Then above-mentioned mixed sand is mixed by 1.1: 1 weight ratio with polyethylene glycol and stir, be configured to mortar.F360 carborundum and No. 800 carborundum are the commercially available prod.
Embodiment 2
A kind of butting technique of silicon single crystal rod may further comprise the steps:
(1) choosing length is 170mm; Diameter is the monocrystalline silicon pole of 166.5mm; The monocrystalline silicon pole vertically is bonded in the crystalline substance holder of butt machine with viscose glue and cooling at normal temperatures, the viscose glue temperature is 380 ℃, and the vertical missing angle of monocrystalline silicon pole is in 90 ° ± 1.5 °;
(2) the crystalline substance holder of butt machine and monocrystalline silicon pole are placed on the butt machine and add on the magnetic workbench, number record adds fixing brilliant holder of magnetic and monocrystalline silicon pole, adds magnetic 10 seconds with magnetizer, continuous 2 times;
(3) calibration connects positioning table, and the main roller spacing of butt machine is modified to 125.4mm, sets the processing cutting parameter, and wherein, mortar viscosity is 45mpa.s, and slurry density is 1.78g/cm3; Mortar temperature is 25.5 ℃; The mortar flow is 120L/min; Ew line is put to amount and is 15m/min; Line of cut average speed is 750m/min; Cutting speed is 880 μ m/min; Start the butt machine then and be with the sand cutting;
(4) with the semi-finished product after the above-mentioned cutting transfer in 32 ℃ of warm water place 13min after, the hot water of putting into 68 ℃ again comes unstuck, and removes flaw-piece and separates brilliant holder;
(5) the above-mentioned process of check is come unstuck and is separated the semi-finished product after brilliant holder is handled, and through check, this semi-finished product length of side tolerance is ± 0.5mm; The vertical missing degree is in 90 ° ± 0.5 °; Surface smoothness is ▽ 9, meets the butt standard-required fully, can change other operational sequences over to.
The configuration of mortar in the step (3): at first F360 carborundum and No. 800 carborundum are mixed into mixed sand by 6: 4 weight ratio; The carborundum particle diameter is 14-15um; Then above-mentioned mixed sand is mixed by 1.1: 1 weight ratio with polyethylene glycol and stir, be configured to mortar.F360 carborundum and No. 800 carborundum are the commercially available prod.
Embodiment 3
A kind of butting technique of silicon single crystal rod may further comprise the steps:
(1) choosing length is 500mm; Diameter is the monocrystalline silicon pole of 173mm; The monocrystalline silicon pole vertically is bonded in the crystalline substance holder of butt machine with viscose glue and cooling at normal temperatures, the viscose glue temperature is 350 ℃, and the vertical missing angle of monocrystalline silicon pole is in 90 ° ± 1.5 °;
(2) the crystalline substance holder of butt machine and monocrystalline silicon pole are placed on the butt machine and add on the magnetic workbench, number record adds fixing brilliant holder of magnetic and monocrystalline silicon pole, adds magnetic 10 seconds with magnetizer, continuous 3 times;
(3) calibration connects positioning table, and the main roller spacing of butt machine is modified to 125.5mm, sets the processing cutting parameter, and wherein, mortar viscosity is 43mpa.s, and slurry density is 1.73g/cm3; Mortar temperature is 24.5 ℃; The mortar flow is 115L/min; Ew line is put to amount and is 25m/min; Line of cut average speed is 650m/min; Cutting speed is 650 μ m/min; Start the butt machine then and be with the sand cutting;
(4) with the semi-finished product after the above-mentioned cutting transfer in 33 ℃ of warm water place 10min after, the hot water of putting into 65 ℃ again comes unstuck, and removes flaw-piece and separates brilliant holder;
(5) the above-mentioned process of check is come unstuck and is separated the semi-finished product after brilliant holder is handled, and through check, this semi-finished product length of side tolerance is ± 0.5mm; The vertical missing degree is in 90 ° ± 1.5 °; Surface smoothness is ▽ 8, meets the butt standard-required fully, can change other operational sequences over to.
The configuration of mortar in the step (3): at first F360 carborundum and No. 800 carborundum are mixed into mixed sand by 6: 4 weight ratio; The carborundum particle diameter is 14-15um; Then above-mentioned mixed sand is mixed by 1.1: 1 weight ratio with polyethylene glycol and stir, be configured to mortar.F360 carborundum and No. 800 carborundum are the commercially available prod.
Claims (3)
1. the butting technique of a silicon single crystal rod is characterized in that, may further comprise the steps:
(1) chooses length between 170-500mm; The monocrystalline silicon pole of diameter between 166.5-173mm; The monocrystalline silicon pole vertically is bonded in the crystalline substance holder of butt machine with viscose glue and cooling at normal temperatures; The viscose glue temperature is 350-400 ℃, and the vertical missing angle of monocrystalline silicon pole is in 90 ° ± 1.5 °;
(2) the crystalline substance holder of butt machine and monocrystalline silicon pole are placed on the butt machine and add on the magnetic workbench, number record adds fixing brilliant holder of magnetic and monocrystalline silicon pole;
(3) calibration connects positioning table, and the main roller spacing of butt machine is modified to 125.3-125.5mm, sets the processing cutting parameter; Wherein, mortar viscosity is 42-45mpa.s, and slurry density is 1.73-1.78g/cm3; Mortar temperature is 24.5-25.5 ℃, and the mortar flow is 110L/min-120L/min; Ew line is put to amount and is 15-25m/min; Line of cut average speed is 650-750m/min; Cutting speed is 650-880 μ m/min; Start the butt machine then and be with the sand cutting;
(4) with the semi-finished product after the above-mentioned cutting transfer in the 32-35 ℃ of warm water place 10-15min after, the hot water of putting into 65-70 ℃ again comes unstuck, and removes flaw-piece and separates brilliant holder;
(5) the above-mentioned process of check is come unstuck and is separated the semi-finished product after brilliant holder is handled, and certified products change other operations over to.
2. according to the butting technique of the described silicon single crystal rod of claim 1; It is characterized in that: the configuration of said mortar: at first F360 carborundum and No. 800 carborundum are mixed into mixed sand by 6: 4 weight ratio; Then above-mentioned mixed sand is mixed by 1.1: 1 weight ratio with polyethylene glycol and stir, be configured to mortar.
3. according to the butting technique of the described silicon single crystal rod of claim 2, it is characterized in that: said carborundum particle diameter is 14-15um.
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| CN201110230936A CN102328353A (en) | 2011-08-12 | 2011-08-12 | Cutting process of silicon single crystal rods |
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| CN201110230936A CN102328353A (en) | 2011-08-12 | 2011-08-12 | Cutting process of silicon single crystal rods |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112045874A (en) * | 2020-09-07 | 2020-12-08 | 成都青洋电子材料有限公司 | Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer |
| CN113681736A (en) * | 2021-07-30 | 2021-11-23 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
Citations (6)
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| US6352072B2 (en) * | 1999-03-08 | 2002-03-05 | A&A Material Corporation | Ingot support device for slicing silicon |
| EP1555101A1 (en) * | 2003-12-17 | 2005-07-20 | HCT Shaping Systems SA | Wire saw device |
| JP2006224266A (en) * | 2005-02-18 | 2006-08-31 | Sumco Corp | Ingot cutting method with wire saw |
| CN2825255Y (en) * | 2005-10-20 | 2006-10-11 | 冯金生 | Monocrystalline silicon squaring device |
| CN101075558A (en) * | 2007-05-22 | 2007-11-21 | 晶湛（南昌）科技有限公司 | Method of silicon slices |
| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
-
2011
- 2011-08-12 CN CN201110230936A patent/CN102328353A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6352072B2 (en) * | 1999-03-08 | 2002-03-05 | A&A Material Corporation | Ingot support device for slicing silicon |
| EP1555101A1 (en) * | 2003-12-17 | 2005-07-20 | HCT Shaping Systems SA | Wire saw device |
| JP2006224266A (en) * | 2005-02-18 | 2006-08-31 | Sumco Corp | Ingot cutting method with wire saw |
| CN2825255Y (en) * | 2005-10-20 | 2006-10-11 | 冯金生 | Monocrystalline silicon squaring device |
| CN101075558A (en) * | 2007-05-22 | 2007-11-21 | 晶湛（南昌）科技有限公司 | Method of silicon slices |
| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112045874A (en) * | 2020-09-07 | 2020-12-08 | 成都青洋电子材料有限公司 | Process suitable for multi-wire cutting of semiconductor monocrystalline silicon wafer |
| CN113681736A (en) * | 2021-07-30 | 2021-11-23 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
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Application publication date: 20120125 |