CN106738395A - A kind of method of the wire cutting of crystalline silicon - Google Patents
A kind of method of the wire cutting of crystalline silicon Download PDFInfo
- Publication number
- CN106738395A CN106738395A CN201611154712.4A CN201611154712A CN106738395A CN 106738395 A CN106738395 A CN 106738395A CN 201611154712 A CN201611154712 A CN 201611154712A CN 106738395 A CN106738395 A CN 106738395A
- Authority
- CN
- China
- Prior art keywords
- mortar
- cutting
- silicon
- online
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
Abstract
The present invention relates to a kind of method of the wire cutting of crystalline silicon.Methods described is cut using online mortar and structure lines, effectively improves cutting speed and cutting efficiency, improves yield rate, reduces the cost of supplementary product such as mortar, improves section profitability.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technical field, more particularly, to a kind of wire cutting of crystalline silicon
Method.
Background technology
With the development of society, solar photovoltaic industry progressively turns into a kind of new leading industry.In solar silicon wafers line
In cutting production process, the steel wire of the cutting silicon chip that current industry is commonly used is main or cross section is circular or ellipse
Ordinary straight steel wire, the cutting method as described in Publication No. CN103192462A, CN102275232A is exactly using ordinary straight steel wire
Mortar cutting technique.A large amount of mortars need to be put into, slow platform speed cutting yields poorly, high cost, when silico briquette is cut, carborundum
Grain lacks adhesive force, is easily come off from steel wire surface, and steel wire can cause the splashing of slurry in silico briquette line inlet port, and then reduce mortar
Carry, influence cutting quality.Cutting speed thus using ordinary straight steel wire is slow, and mortar unit consumption is big, and product percent of pass is low.
Existing market continues vigorous, silicon chip supply side anxiety to the demand of silicon chip, and silicon chip enterprise pursues production capacity with all strength in the industry,
Because expand production high cost, cycle of used device is long, thus it is main or from lifting process platform speed, excavate existing production capacity potential and start with, but
Improve platform speed, shorten technique clipping time as one-sided, the cutting quality of silicon chip can rapidly deteriorate, qualification rate degradation, make
Into the rising of production cost, firms profitability cannot be still improved.
The technique of current Buddha's warrior attendant wire cutting monocrystalline silicon is gradually promoted, but the technique of Buddha's warrior attendant wire cutting polysilicon does not almost have
Have, main reason is that the performance design defect of existing cutting machine, such as conversion diamond wire saw, need to put into larger fund
Complete upgrading transformation is carried out to existing chopper and slicer, and improved stabilization of equipment performance is bad, product percent of pass is low.
In addition, polysilicon impurity is high, cutting difficulty is bigger than monocrystalline silicon, the cost of supplementary product of existing Buddha's warrior attendant wire cutting technology and cut
Cut technology and have no cost advantage relative to the cutting of ordinary straight steel wire mortar.More crucially Buddha's warrior attendant wire cutting polysilicon chip battery system
Technology for cashmere (black silicon technology, wet-method etching) need to put into substantial contribution upgrading, superseded existing battery and set though there is breakthrough
It is standby, do not possess the technology and cost advantage of volume production popularization, thus Buddha's warrior attendant wire cutting polysilicon chip weakness of demand also at present.
Based on this, suit measures to local conditions in the industry for improve steel wire band sand ability and progressively develop ripple steel wire, spiral steel wire and
Structure steel wire etc., such steel wire is helpful to improving band sand ability, but because these steel wires have certain waveform, such as without therewith
, easily there is intermittent stria or TTV (total thickness deviation) is abnormal in multi-wire saw in the cutting technique matched somebody with somebody, to speed-raising volume increase drop
This contribution does not reach expection much.The spiral wire cutting technology technology as described in publication number CN103448154A, platform speed and auxiliary material
Cost is still improved space.
The content of the invention
[technical problem]
This invention address that developing a kind of wire cutting method of crystalline silicon, methods described is cut using structure lines, is had
Effect improves cutting speed and cutting efficiency, improves yield rate, reduces the cost of supplementary product such as mortar, improves section profitability.
[technical scheme]
According to an aspect of the invention, there is provided a kind of wire cutting method of crystalline silicon, methods described is by wire cutting
Machine is carried out, and is comprised the following steps：
(1) preparation of online mortar
Online mortar is prepared, the online mortar is the mixed mortar comprising polyethylene glycol and silicon-carbide particle, and density is
1.660-1.675kg/L, viscosity is 220-260mPas；
(2) guide wheel processing
Fluting angle is 70-80 °, and groove depth is 190 ± 10 μm, and slot pitch compensation is 7-17 μm and V or the fluting work of U-type groove
Skill processes the guide wheel of the wire cutting machine；
(3) crystalline silicon cutting
The speed of setting structure line is 9.5-15m/s, and tension force is R/L：25-20N/18-24N, crystalline silicon to be cut enters
It is 0.255-0.500mm/min to speed, the flow of the online mortar is 110-150kg/min, and the temperature of online mortar is
17-23℃.Before cutting coefficient addition mortar, i.e. mortar addition=effectively cut are changed according to silico briquette effective cutting length and mortar
Cut length * mortars and change coefficient, wherein it is the online mortar/mm of 0.3-0.4kg that the mortar changes coefficient.
In the present invention, online mortar mainly includes cutting liquid and sand, and the main component of cutting liquid is polyethylene glycol, sand master
To be made up of 1500#SiC particles.Mortar is not originally aqueous, but polyethylene glycol water absorbing capacity is strong, may contain during use
The water of about 1.5 weight %, the sand is dispersed in suspension within cutting liquid.Cutting liquid mainly plays suspended dispersed SiC, and cooling cuts through
Heat that journey is produced simultaneously lubricates the effect of silicon chip.
In the present invention, the wire cutting machine includes cabling system, feed system, slurry systems and control system.Wherein,
The cabling system mainly includes unwrapping wire room, take-up room, guide wheel and big truckle, and structure lines are drawn from unwrapping wire room, are slided through size
Wheel returns to take-up room after reaching each groove composition cutting gauze of guide wheel through pulley；The feed system includes work piece platform, its load
The crystal bar of cutting to be processed is pressed to above-mentioned cutting gauze to realize the cutting of crystalline silicon by process feeding；The mortar system
System extracts online mortar from mortar jar, and the online mortar is after cool-heat-exchanger reaches technological requirement temperature, flow through spray
Mouth is uniformly sprayed onto on gauze, plays cutting silicon rod, lubrication cooling effect, then be back to mortar jar from cutting chamber；The control
System mainly completes automatically controlling for cabling, mortar and feed system etc., and purpose is automatically cut by technique to reach.
An implementation method of the invention, in step (1), it is preferable that as the polyethylene glycol of silicon chip cutting fluid
Viscosity is 45-50mPas, and the granularity of silicon-carbide particle is 1500#, i.e. D50It is 9.8-10.5 μm, the sand liquid of the online mortar
Mass ratio (that is, the mass ratio of silicon-carbide particle and polyethylene glycol) is 1.02.
The online mortar can be prepared using the new mortar of the regeneration mortar of 75-85 weight % and 25-15% weight %.
Wherein, the regeneration mortar is to reclaim separate waste and old mortar by recovery system, and density is
1.660-1.675kg/L, viscosity is 220-240mpas, and the new mortar is the new mortar prepared, and its density is
1.660-1.675kg/L, viscosity is 220-240mpas, and the two mixed mortar is the online sand used by step (1)
Slurry.
Preferably, prepare it is described regeneration mortar and the new mortar used by cutting liquid (polyethylene glycol) 0-100 can be included
The recovered liquid (recovery system reclaims separate polyethylene glycol) of weight %, remaining is new cutting liquid.Wherein, the recovered liquid
It is press filtration, purified treatment from waste mortar, checks qualified liquid.
Preferably, the structure lines have near normal sinusoidal waveform and are coated with the structure lines of anti oxidation layer.
An implementation method of the invention, in step (3), the bus of the structure lines a diameter of 0.115 ±
0.005mm, preferably 0.110mm or 0.115mm, it is to adjust changing for correspondence mortar according to cutting silicon rod length that the mortar changes coefficient
Coefficient is calculated, is easy to produce reality to operate
An implementation method of the invention, in step (3), the detailed process of crystalline silicon cutting is：By crystalline silicon blocks
It is bonded on photovoltaic glass, is then attached in wire cutting machine feeding station, structure lines is sequentially wound on the guide wheel of cutting machine and (is set
Fixed, confirmation various process parameters are up to standard), start wire cutting machine (by process) and cut until terminating.After cutting terminates
Rod withdrawal, lifting speed is 50-100mm/min, is removed silicon rod with special lower rod car after silicon rod completely disengages from gauze, is placed on down
In rod go-cart, going to cleaning workshop carries out cleaning treatment.
Wherein, during rod withdrawal such as the gauze clamp of structure lines, with the linear speed cabling of 0.01-0.03m/s or can cut
The net that bursts at the seams completes rod withdrawal.
Wherein, cutting also needs to confirm whether silico briquette cuts through after terminating, and as do not cut through, opens mortar circulation and proceeds certainly
Dynamic cutting, until confirming that silico briquette chamfering is cut through completely, confirmation operates rod withdrawal operation again after cutting through.Wherein, the mesh of the chamfering
Be to reduce processing procedure, the fragment rate of downstream battery operation, therefore need stupefied to four to carry out chamfered after polycrystalline ingot evolution.
Wherein, after the wire cutting machine start carries out heat engine 5-10 minutes, when point inspection parameters index is normal, cut
Cut.
[beneficial effect]
The present invention has stronger band sand ability because of it, and the Hard Inclusion that cutting is produced can be reduced during cutting polysilicon block
Stria 1.0%-1.5%, while reducing impurity broken string.
The present invention reduces mortar unit consumption while lifting section production capacity, i.e., can reduce waste water under equal production capacity
COD (COD), energy consumption is greatly reduced simultaneously, is cut than straight steel wire more environmentally friendly, efficient.
Compared with diamond wire saw, the silicon chip of structural steel wire cutting can normally making herbs into wool, do not influence downstream cell piece to produce
It is normal to carry out, while avoid gauze moment when such as meeting broken string using the silicon chip of diamond wire saw and breaking and lashing silicon chip and cause greatly
Every cutting core index such as the drawbacks of area stria silicon falls or collapses scarce, its Hard Inclusion stria, TTV, cutting stria are also advantageous over passing
The silicon chip (as shown in the table) that straight steel wire of uniting cuts, so that cutting qualification rate can lift more than 3%.
Wherein, A% represents the qualification rate of Grade A, and A+B% represents the qualification rate of Grade A and off standard, and off standard is two
Slightly poorer than first-class Deng product, price is usually less than Grade A, and TTV% represents total thickness deviation rate.
Brief description of the drawings
Fig. 1 schematically illustrates the schematic diagram of the structure lines of an implementation method of the invention.
Fig. 2 schematically illustrates the guide wheel slot type microcosmic detection figure after the processing of an implementation method of the invention.
Specific embodiment
Hereinafter, the present invention is described with specific embodiment with reference to the accompanying drawings, but it should be noted that provided by the present invention
Drawings and Examples be used only as illustrating, and be not intended to be limiting technical spirit of the invention and core element and operation.
On the premise of not departing from technical spirit of the invention and scope, exemplary embodiment of the invention can make various forms of changing
Become.
According to the present invention, there is provided a kind of structure wire cutting method of crystalline silicon, methods described is carried out by wire cutting machine,
And comprise the following steps
(1) preparation of online mortar
To mix with silicon-carbide particle so that mixed mortar is obtained as the low viscosity polyethylene glycol of cutting liquid, to ensure to cut
Effect, the density of the online mortar need to be controlled in 1.660-1.675kg/L, and viscosity need to be controlled in 220-260mPas.
(2) guide wheel processing
According to the crystal silicon chip thickness of final manufacture, according to structure linear diameter, itself abrasion, the decay of waveform, online sand
The D of the contained SiC of slurry50The parameters such as the comprehensive slot pitch for determining guide wheel such as value and gauze length, groove depth and angle, for example, slot pitch=piece
Thickness+line footpath+(3~4) * D50, and slot pitch compensation and steel wire wear extent are quite, and for about 7-10 μm.The guide wheel of structure lines need to be adopted
With wide-angle, shallow slot deep slotting, specifically, the groove angle of guide wheel of the invention is 70-80 °, and groove depth is 190 ± 10 μm,
Slot pitch compensation is 7-17 μm, and is V or U-type groove.For example, Fig. 2 show the use of an implementation method of the invention
0.115mm structure lines 1500#SiC, and the crystal silicon chip thickness of final manufacture is 190 μm of guide wheel slot type microcosmic detection figure, its
Groove angle is 78.917 °, and groove depth is 180.5964 μm, and slot pitch is 344.3931 μm.
(3) crystalline silicon cutting
Setting technological parameter：The speed of structure lines is 9.5-15m/s, and tension force is R/L：25-20N/18-24N, wherein, institute
State tension force to be selected according to the line footpath thickness of structure lines, the usual thinner tension force of line footpath is lower.Table feed speed is (i.e. to be cut
The feed speed of crystalline silicon) it is 0.255-0.500mm/min, the flow of online mortar is 110-150kg/min, online mortar
Temperature is 17-23 DEG C.Before cutting according to silico briquette effective cutting length and mortar change coefficient addition mortar, i.e. mortar addition=
Effective cutting length × mortar changes coefficient, wherein it is the online mortar/mm of 0.3-0.4kg that the mortar changes coefficient, it is described to have
Effect Cutting Length (unit mm) is more than or equal to gauze length, such as effective total length 1010mm of time processing rod, but because of separated time net etc.
Causing gauze physical length may only have 1000mm.
In the present invention, term " structure lines " refers to that directly steel wire is bus with tradition, by pre-former in straight steel wire table
Face forms uniform, stabilization the waveform configuration of near normal sine wave, so as to improve its line of cut with sand ability.Structure lines
Structural representation is as shown in Figure 1.
Wherein, the structure lines used by the present invention are the structure lines for being coated with anti oxidation layer (for example, plating Cu alloys), the structure
Line can shorten technique and take, on the basis of ordinary straight steel wire on the premise of equipment investment is not increased, by optimizing incision technique
The section production capacity of upper lifting 20%-30%.
Additionally, compared to the cutting of straight steel wire, the present invention can reduce mortar unit consumption 10%-20%, while can preferably utilize
The recovery system of line mortar, extends the period of a permutation of recovery system, and circularity requirement of the common steel wire to online mortar is harsh, structure
Line is strong because of its band sand ability, and the quality requirements to mortar are relatively low, i.e. can be in the case where cutting cost of supplementary product is reduced, together
Shi Tisheng silicon chips cut quality.
An implementation method of the invention, in step (1) as silicon chip cutting fluid polyethylene glycol viscosity be 45-
50mPas, the granularity of silicon-carbide particle is 1500#, and the mass ratio of the sand liquid of the online mortar is 1.02.
Additionally, online mortar in step (1) can be using the new of the regeneration mortar of 75-85 weight % and 25-15 weight %
It is prepared by mortar.Wherein, the regeneration mortar is the waste and old mortar of recovery system centrifugation, and its density is 1.660-
1.675kg/L, viscosity is 220-240mpas, and the new mortar is the brand-new mortar prepared, and its density is 1.660-
1.675kg/L, viscosity is 220-240mpas, and the two mixed mortar is the online mortar used by step (1), is prepared
Cutting liquid used by the regeneration mortar and the new mortar can include the recovery of the recovery system centrifugation of 0-100 weight %
Liquid, remaining is new cutting liquid.
An implementation method of the invention, in step (3), sets being replaced by for online mortar amount：Hilted broadsword mortar
Replacing amount=silico briquette effective cutting length × mortar changes coefficient, wherein, hilted broadsword mortar is the crystalline substance that machine often processes a cycle
Mortar amount needed for body silicon wafer brick, it is the online mortar/mm of 0.3-0.4kg that mortar changes coefficient.Additionally, flowing back to mortar in cutting process
(part for cutting machine, for containing mortar, cutting process extracts mortar and is sprayed onto on gauze cylinder from cylinder bottom, and then mortar is collected
To cutting chamber, the mortar jar of Lower Hold is finally flowed back to) mortar temperature at bottom should be controlled below 55 DEG C, otherwise need cleaning heat in time to hand over
Parallel operation, adjustment cutting technique control temperature.
Additionally, in step (3), the detailed process of the cutting is：First photovoltaic glass is bonded on guide rail and is fixed, then will beat
The brilliant brick of break-in lattice is bonded on glass and fixes, and the guide rails assembling of brilliant brick will be then stained with to the feeding station of slicer, by structure
Line is sequentially wound on the guide wheel of cutting machine, and setting, confirmation various process parameters are up to standard, starts cutting, the work of the brilliant brick of load
Platform is cut until terminating by process.Cutting terminates rear rod withdrawal (lifting the silicon chip for cutting), and lifting speed is 50-100mm/
Min, silicon rod is removed, be placed in lower rod go-cart after silicon rod completely disengages from gauze with special lower rod car, is gone to cleaning workshop and is entered
The treatment of row degumming cleaning.
Wherein, after cutting machine start carries out heat engine 5-10 minutes, when point inspection parameters index is normal, cut.
Wherein, can aid in being walked with the linear speed of 0.01-0.03m/s if structure gauze is by silicon chip clamp during rod withdrawal
Line cuts off gauze completion rod withdrawal, it is ensured that final obtained silicon chip is perfectly safe.
Wherein, cutting also needs to confirm whether silico briquette cuts through after terminating, and as do not cut through, opens mortar circulation and proceeds certainly
Dynamic cutting, until confirm that silico briquette chamfering is cut through completely, confirmation cut through after rod withdrawal again, wherein, the meaning of the chamfering be for
The fragmentation of silicon chip when downstream battery component is produced is reduced, it is necessary to carry out chamfered to four angles of brilliant brick, that is, round dot of polishing is commonly called as
Chamfering.
Embodiment
In following examples, structure lines used are commercially available ordinary construction steel wire, such as Bel Ka Te, Qingdao Hyosung, Koryo system
The producers such as steel, Baosteel produce structure lines.
Embodiment 1
Produce crystal silicon chip according to the following steps.
(1) new mortar is prepared：By polyethylene glycol, (viscosity 45mPas is with new 1500# silicon-carbide particles with 1.02 sand
Liquid mass ratio is mixed to prepare new mortar, and the density of the new mortar is 1.675kg/L, and viscosity is 240mpas；
(2) regeneration mortar is prepared：Waste mortar is centrifuged into device wherein fine particle will be removed, and waste liquid is pressed
Filter purified treatment, then by the sand liquid hybrid modulation after treatment into density about 1.675Kg/L regeneration mortar, because of its processing procedure base
Originally it is physical method, the viscosity (240mPas) of liquid remains unchanged substantially.
(3) online mortar is prepared：20% weight is taken to be treated than regeneration mortar mixing and stirring than the weight of new mortar+80%
With, it is ensured that in 1.675kg/L, viscosity is 240mPas to density.
(4) guide wheel is processed：It it is 75 ± 5 ° with groove angle, groove depth is 190 ± 10 μm, slot pitch compensation is 7 μm and V-groove
Grooving processes process the guide wheel of wire cutting machine；
(5) crystalline silicon cutting：
1100mm photovoltaic glass is bonded on guide rail and is fixed, then 1020mm crystal silicon wafer bricks long are bonded on glass solid
After fixed (more than about 4 hours), then by the feeding station of guide rails assembling to wire cutting machine；By the structure lines of 0.115mm line footpaths from
Actinobacillus wheel is covered with the guide wheel that slot pitch is 0.347mm through pulley, then through on pulley to take-up pulley.
Cutting machine start carries out heat engine 5 minutes, and the speed of setting structure line is 13.5m/s, and tension force is R/L：22N/18N,
The feed speed of crystalline silicon to be cut is 0.25-0.49mm/min (average rate 0.45/mm), and the flow of online mortar is 130kg/
Min, temperature is 19-21 DEG C, and it is the online mortar/mm of 0.353kg that mortar changes coefficient.
The addition online mortars of 360kg are straight by the qualified rear unlatching surface trimming pattern of machine operational procedure point inspection technological parameter
To end.Cutting terminates rear rod withdrawal, and lifting speed is 50-100mm/min, with special lower rod car after silicon rod completely disengages from gauze
Silicon rod is removed, is placed in lower rod go-cart, going to cleaning workshop carries out degumming cleaning treatment, inspection process is then delivered to, through certainly
Dynamic separator presses the sorting of specification test standard menu and judges each grade ownership.
Wherein, structure lines used produce 0.115mm structure lines, numbering D16221423 by Koryo Zhi Gang companies；Fresh sand is great
Rich green wood is produced, numbering XSYZRD20140914；Cutting liquid is produced by Losec, numbering 16207319A07A.
Comparative example 1
Straight steel wire cutting uses common steel wire rather than structure lines, and in addition to the following parameter with notable difference,
Cut in mode substantially the same manner as Example 1.
(1) new mortar and the regeneration mortar same structure lines of weight accounting in online mortar used by straight steel wire, but mortar density
It is 1.675kg/L, viscosity is 240mPas, and it is 0.5Kg/mm that mortar changes coefficient；
(2) guide wheel is processed：It it is 45 ± 5 ° with groove angle, groove depth is 200 ± 10 μm, slot pitch compensation is 10 μm and V-groove
Grooving processes process wire cutting machine guide wheel；
(3) average speed for setting straight steel wire is 13.3m/s, and tension force is R/L：24N/22N, the feeding of crystalline silicon to be cut
Speed is 0.25-0.38mm/min (average rate 0.35mm/min), and the flow of online mortar is 140kg/min, and temperature is 17-20 DEG C
And it is the online mortar/mm of 0.40kg that mortar changes coefficient.
Wherein, straight steel wire used produces 0.115mm structure lines, numbering 1015630845 by Bel Ka Te companies；Fresh sand is
Extensive green wood is produced, numbering XSYZRD20140914；Cutting liquid is produced by Losec, numbering 16207319A07A.
Straight steel wire compared to comparative example 1 cuts, and according to embodiments of the present invention 1 structure lines cut silicon chip qualification rate
(overall acceptability rate is up to 93%) about high by 3%, mainly its band sand ability are good, the Hard Inclusion breaking capacity produced to ingot casting process
By force, i.e., Hard Inclusion stria can decline about 1.1%, and cutting stria, chipping and TTV etc. can reduce about 2%, remaining silicon chip electrical property,
The parameters such as size are consistent.In addition to quality heterosis, structure lines process time 20-30% faster than straight steel wire can the existing machine of significant increase
Platform production capacity, improves company's profitability.
Claims (9)
1. a kind of wire cutting method of crystalline silicon, methods described is carried out by wire cutting machine, and is comprised the following steps：
(1) preparation of online mortar
Online mortar is prepared, the online mortar is the mixed mortar comprising polyethylene glycol and silicon-carbide particle, and density is
1.660-1.675kg/L, viscosity is 220-260mPas；
(2) guide wheel processing
Fluting angle is 70-80 °, and groove depth is 190 ± 10 μm, and slot pitch compensation adds for the grooving processes of 7-17 μm and V or U-type groove
The guide wheel of wire cutting machine described in work；
(3) crystalline silicon cutting
The speed of setting structure line is 9.5-15m/s, and tension force is R/L：25-20N/18-24N, the feeding speed of crystalline silicon to be cut
It is 0.255-0.500mm/min to spend, and the flow of the online mortar is 110-150kg/min, temperature be 17-23 DEG C and mortar more
Coefficient is changed for the online mortar/mm of 0.3-0.4kg are cut, wherein, before cutting according to silico briquette effective cutting length and mortar more
Change coefficient addition mortar, i.e. mortar addition=effective cutting length * mortars and change coefficient, wherein the mortar changes coefficient being
Online mortar/the mm of 0.3-0.4kg.
2. method according to claim 1, wherein, in step (1), the viscosity as the polyethylene glycol of silicon chip cutting fluid is
45-50mPas, the granularity of silicon-carbide particle is 1500#, and the sand liquid mass ratio of the online mortar is 1.02.
3. method according to claim 1, wherein, the online mortar using 80 weight % regeneration mortar and 20 weights
The new mortar of % is measured to prepare, wherein, the regeneration mortar is to reclaim separate waste and old mortar by recovery system, and density is
1.660-1.675kg/L, viscosity is 220-240mpas, and the new mortar is the new mortar prepared, and density is 1.660-
1.675kg/L, viscosity is 220-240mpas.
4. method according to claim 3, wherein, prepare the regeneration mortar and the cutting liquid bag used by the new mortar
The recovery polyethylene glycol of the % of weight containing 0-100.
5. method according to claim 1, wherein, in step (3), a diameter of 0.110mm of the bus of the structure lines
Or 0.115mm.
6. method according to claim 1, wherein, in step (3), the structure lines have vertical sinusoidal waveform and are plating
There are the structure lines of anti oxidation layer.
7. method according to claim 1, wherein, the detailed process of step (3) crystalline silicon cutting is：Crystalline silicon blocks are glued
On photovoltaic glass, it is then attached in cutting machine feeding station, structure lines is sequentially wound on the guide wheel of the wire cutting machine,
Start wire cutting machine to be cut until terminating, cutting rises silicon rod after terminating, and lifting speed is 50-100mm/min, treats silicon
Rod is removed silicon rod with special lower rod car after completely disengaging from gauze, is placed in lower rod go-cart, and going to cleaning workshop is carried out at cleaning
Reason.
8. method according to claim 7, wherein, when gauze clamp is run into during the silicon rod that lifting cuts, with
The linear speed cabling of 0.01-0.03m/s cuts off gauze completion rod withdrawal.
9. method according to claim 7, wherein, after the wire cutting machine start carries out heat engine 5-10 minutes, cut
Cut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611154712.4A CN106738395A (en) | 2016-12-14 | 2016-12-14 | A kind of method of the wire cutting of crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611154712.4A CN106738395A (en) | 2016-12-14 | 2016-12-14 | A kind of method of the wire cutting of crystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106738395A true CN106738395A (en) | 2017-05-31 |
Family
ID=58888826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611154712.4A Pending CN106738395A (en) | 2016-12-14 | 2016-12-14 | A kind of method of the wire cutting of crystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106738395A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107775828A (en) * | 2017-10-31 | 2018-03-09 | 南通皋鑫电子股份有限公司 | A kind of Buddha's warrior attendant wire cutting silicon folds technique |
| CN108000739A (en) * | 2017-11-28 | 2018-05-08 | 江苏奥明能源有限公司 | A kind of mortar cutting method |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| CN110871505A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Compound cutting method for crystal silicon rod |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112092225A (en) * | 2020-09-22 | 2020-12-18 | 上海新昇半导体科技有限公司 | Crystal bar baffle and crystal bar cutting method |
| CN113211278A (en) * | 2021-05-14 | 2021-08-06 | 安徽省景隆电子科技有限公司 | Cutting method for improving alloy resistance blanking efficiency |
| WO2022001008A1 (en) * | 2020-06-28 | 2022-01-06 | 银川隆基光伏科技有限公司 | Solar silicon wafer cutting method, device, and storage medium |
| CN114770779A (en) * | 2022-04-29 | 2022-07-22 | 浙江晶盛机电股份有限公司 | Mortar cutting process of silicon carbide crystal and silicon carbide sheet |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2856002A1 (en) * | 2003-06-16 | 2004-12-17 | Multitech 16 | Mobile concrete mixer for use in small and average size building sites, has cradle to move mixer, and aggregate transfer device to transfer aggregates and cement from reservoir, to horizontal mixer unit to provide concrete mix |
| CN102241083A (en) * | 2011-07-12 | 2011-11-16 | 浙江德圣龙新材料科技有限公司 | Isoviscous mortar cutting method and device used for wire-electrode cutting of solar silicon wafer |
| CN102350741A (en) * | 2011-09-22 | 2012-02-15 | 英利能源（中国）有限公司 | Silicon block cutting method |
| CN103448154A (en) * | 2013-08-28 | 2013-12-18 | 衡水英利新能源有限公司 | Silicon-block cutting method |
| CN103522431A (en) * | 2013-10-21 | 2014-01-22 | 山西潞安太阳能科技有限责任公司 | Silicon wafer cutting technology |
-
2016
- 2016-12-14 CN CN201611154712.4A patent/CN106738395A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2856002A1 (en) * | 2003-06-16 | 2004-12-17 | Multitech 16 | Mobile concrete mixer for use in small and average size building sites, has cradle to move mixer, and aggregate transfer device to transfer aggregates and cement from reservoir, to horizontal mixer unit to provide concrete mix |
| CN102241083A (en) * | 2011-07-12 | 2011-11-16 | 浙江德圣龙新材料科技有限公司 | Isoviscous mortar cutting method and device used for wire-electrode cutting of solar silicon wafer |
| CN102350741A (en) * | 2011-09-22 | 2012-02-15 | 英利能源（中国）有限公司 | Silicon block cutting method |
| CN103448154A (en) * | 2013-08-28 | 2013-12-18 | 衡水英利新能源有限公司 | Silicon-block cutting method |
| CN103522431A (en) * | 2013-10-21 | 2014-01-22 | 山西潞安太阳能科技有限责任公司 | Silicon wafer cutting technology |
Non-Patent Citations (1)
| Title |
|---|
| 段光复等: "《高效晶硅太阳电池技术-设计、制造、测试、发电》", 28 February 2014, 北京：机械工业出版社 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107775828A (en) * | 2017-10-31 | 2018-03-09 | 南通皋鑫电子股份有限公司 | A kind of Buddha's warrior attendant wire cutting silicon folds technique |
| CN108000739A (en) * | 2017-11-28 | 2018-05-08 | 江苏奥明能源有限公司 | A kind of mortar cutting method |
| CN108000739B (en) * | 2017-11-28 | 2019-11-12 | 泉州台商投资区中达工业设计有限公司 | A kind of mortar cutting method |
| CN110871505A (en) * | 2018-08-30 | 2020-03-10 | 洛阳阿特斯光伏科技有限公司 | Compound cutting method for crystal silicon rod |
| CN109304819A (en) * | 2018-11-27 | 2019-02-05 | 扬州荣德新能源科技有限公司 | A kind of crystalline silicon blocks high efficiency cutting method |
| WO2022001008A1 (en) * | 2020-06-28 | 2022-01-06 | 银川隆基光伏科技有限公司 | Solar silicon wafer cutting method, device, and storage medium |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112078038B (en) * | 2020-07-30 | 2022-07-22 | 乐山高测新能源科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112092225A (en) * | 2020-09-22 | 2020-12-18 | 上海新昇半导体科技有限公司 | Crystal bar baffle and crystal bar cutting method |
| CN113211278A (en) * | 2021-05-14 | 2021-08-06 | 安徽省景隆电子科技有限公司 | Cutting method for improving alloy resistance blanking efficiency |
| CN114770779A (en) * | 2022-04-29 | 2022-07-22 | 浙江晶盛机电股份有限公司 | Mortar cutting process of silicon carbide crystal and silicon carbide sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106738395A (en) | A kind of method of the wire cutting of crystalline silicon | |
| CN109304819A (en) | A kind of crystalline silicon blocks high efficiency cutting method | |
| US6568384B1 (en) | Semiconductor material cutting and processing method | |
| CN107116712A (en) | A kind of method for electroplating diamond wire high efficiency cutting silicon chip | |
| US20100215561A1 (en) | Recovery method of silicon slurry | |
| CN105216127B (en) | Multi-line cutting method and multi-line cutting machine | |
| US20130001816A1 (en) | Method for recovering silicon and method for producing silicon | |
| CN110076919A (en) | A kind of sapphire ingot immersion Multi-wire cutting device and method | |
| CN106082233A (en) | The method reclaiming silica flour from diamond wire cutting slurry | |
| CN1509222A (en) | Cutting process for rare-earth alloy | |
| US20030041895A1 (en) | Photovoltaic cells from silicon kerf | |
| CN102092102B (en) | Crystal-block bonding rod slicing process | |
| CN106113297B (en) | A kind of processing method of polycrystalline cycle stock | |
| CN104760146B (en) | A kind of compound fixed abrasive sawing wire for multi-wire saw and preparation method thereof | |
| CN102174749B (en) | Free edge material cutting line with aramid core wire and preparation method thereof | |
| CN104493988B (en) | A kind of high viscosity mortar cutting technique for silicon chip cutting | |
| CN105636742B (en) | The cutting-off method of workpiece | |
| CN112140375A (en) | Multi-wire cutting system and method for silicon carbide wafer | |
| CN102451893B (en) | Manufacturing method for alloy wire rod | |
| WO2017103229A1 (en) | Manufacturing method of a silicon single crystal and silicon wafer production facility | |
| CN210308495U (en) | Sapphire crystal bar immersion type multi-wire cutting device | |
| CN112359415B (en) | Manufacturing process of solar P-type polycrystalline silicon wafer | |
| CN114653905A (en) | Method for producing oxygen-free copper rod by up-drawing method | |
| JP4741341B2 (en) | Cutting method of semiconductor ingot | |
| Ge et al. | Fabrication and performance evaluation for resin-bonded diamond wire saw |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |
|
| RJ01 | Rejection of invention patent application after publication |