CN108972919A - The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer - Google Patents
The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer Download PDFInfo
- Publication number
- CN108972919A CN108972919A CN201710402195.6A CN201710402195A CN108972919A CN 108972919 A CN108972919 A CN 108972919A CN 201710402195 A CN201710402195 A CN 201710402195A CN 108972919 A CN108972919 A CN 108972919A
- Authority
- CN
- China
- Prior art keywords
- silicon
- single crystal
- grinding
- crystal rod
- monocrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
Abstract
The invention discloses the techniques that a kind of silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer, mainly include following below scheme: crystal growth → cutting → outer diameter barreling → cross grinding, polishing → slice → chamfering → grinding → corrosion → polishing → cleaning → packaging.Silicon single crystal rod of the present invention is processed into the simple process of monocrystalline silicon buffing silicon wafer, and required equipment requirement is low, at low cost, and processing efficiency can be improved.
Description
Technical field
The present invention relates to single silicon fields, and in particular to a kind of silicon single crystal rod is processed into the work of monocrystalline silicon buffing silicon wafer
Skill.
Background technique
Monocrystalline silicon is a kind of nonmetalloid that comparison is active, is the important component of crystalline material, is in new material
The forward position of development.Its main application is used as semiconductor material and utilizes solar energy power generating, heat supply etc..Since solar energy has
The many advantages such as have cleaning, environmental protection, facilitate, in the late three decades, solar utilization technique research and develop, commercially produce, city
Developing aspect all obtains tremendous development, become the world quickly, one of the new industry of stable development.Monocrystalline silicon can be used for
Production and the deep processing manufacture of diode grade, rectifying device grade, circuit-level and solar battery grade single crystal product article, subsequent production
Product integrated circuit and semiconductor separation part are widely used to every field, also occupy importantly in military avionic equipment
Position.In today that photovoltaic technology and microminiature semiconductor inverter technology develop rapidly, silicon single crystal solar energy produced is utilized
Solar energy directly can be converted into luminous energy by battery, realize the beginning for green energy resource revolution of marching toward.2008 Beijing Olympic Games
It will show using " Green Olympics " as important displaying towards the whole world, the utilization of monocrystalline silicon will be very important one wherein
Ring.Now, external solar photovoltaic power plant has arrived the theoretical stage of ripeness, to practical stage transition, the sun
The utilization of energy silicon single crystal will spread to worldwide, and market demand is self-evident.Monocrystalline silicon processes work in the prior art
Skill, complex process with high requirements and high cost to process equipment.
Summary of the invention
The present invention overcomes the deficiencies in the prior art, the work that a kind of silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer is provided
Skill.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of silicon single crystal rod is processed into the technique of monocrystalline silicon buffing silicon wafer, the technique the following steps are included:
Cutting
Cut off head, the tail portion of silicon single crystal rod, the length that silicon single crystal rod is cut into；
Outer diameter grinding
Outer diameter barreling is carried out to the monocrystalline silicon after cutting using cylindrical grinder；
Cross grinding
Cross grinding is carried out to the monocrystalline silicon using numerical control end surface of monocrystalline silicon grinding machine；
Slice
The silicon single crystal rod after grinding is cut into the LED reverse mounting type of default geometric dimension；
Chamfering
It is using beveler that the chip taxes and profits side being cut into finishing is in the arc-shaped, prevent Waffer edge rupture and lattice defect from producing
It is raw, increase the flatness of epitaxial layer and photoresist layer；
Grinding
The silicon single crystal wafer after chamfering is ground using twin grinder；The raw material that the grinding uses includes: slurry
Material and sliding supernatant liquid；
Corrosion
The damaging layer formed using chemical attack removal wafer surface by machining stress；
Polishing
The monocrystalline silicon sheet surface after corrosion treatment is polished using polishing machine；
Cleaning
The monocrystalline silicon piece after the polishing is cleaned using RCA wet chemistry method of cleaning.
Further technical solution, which is in the cutting step, to be cut off using cubic cutting machine.
Further technical solution, which is in the slicing step, is cut using interior garden cutting machine or wire cutting machine
Piece.
Further technical solution is that the composition of the grinding slurry includes: aluminium oxide, chromium sand and water.
Compared with prior art, the beneficial effects of the present invention are: silicon single crystal rod of the present invention is processed into monocrystalline silicon buffing silicon wafer
Simple process, required equipment requirement is low, at low cost, and processing efficiency can be improved.
Specific embodiment
Below with reference to embodiment, the present invention is further elaborated.
According to one embodiment of present invention, the present embodiment discloses a kind of silicon single crystal rod and is processed into monocrystalline silicon buffing silicon wafer
Technique, mainly include following below scheme: crystal growth → cutting → outer diameter barreling → cross grinding, polishing → slice → chamfering → are ground
Mill → corrosion → polishing → cleaning → packaging.
Specifically, the technique detailed process that the present embodiment silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer is as follows:
Cutting: purpose is to cut off head, tail portion and the part beyond customer specifications of silicon single crystal rod, the length that silicon single crystal rod is cut into
Degree.The equipment of cutting: cubic cutting machine.
Outer diameter grinding: since the external diameter surface and out-of-flatness and diameter of silicon single crystal rod are also than finally polishing chip defined
Diameter specifications are big, can obtain more accurate diameter by outer diameter barreling.The equipment of outer diameter barreling: cylindrical grinder.
Cross grinding: the end face that monocrystalline silicon is held in both hands after the cutting of four directions is coarse, needs the grinding and polishing of end face.Processing is set
It is standby: numerical control end surface of monocrystalline silicon grinding machine.
Slice: refer to and silicon single crystal rod is cut into the LED reverse mounting type with precise geometrical size.The equipment of slice: interior garden cutting machine or
Wire cutting machine.
Chamfering: refer to that the chip taxes and profits side finishing that will be cut into is in the arc-shaped, prevent Waffer edge from rupturing and lattice defect generates, increasing
Add the flatness of epitaxial layer and photoresist layer.The capital equipment of chamfering: beveler
Grinding: refer to by grinding the kerf and surface damage layer that can remove slice and disc sharpener and be made, be effectively improved monocrystalline silicon piece
Curvature, flatness and the depth of parallelism reach the manageable specification of polishing process.The equipment of grinding: twin grinder.
Primary raw material: grinding slurry (main ingredient is aluminium oxide, chromium sand, water), sliding supernatant liquid.
Corrosion: after referring to the machinings such as sliced and grinding, the damaging layer that wafer surface is formed by machining stress is generallyd use
Chemical attack removal.The mode of corrosion: (A) sour corrosion is most universal adopted.Acid etching solution is by nitric acid (HNO3),
Hydrofluoric acid (HF) and some buffering acid (CH3COCH, H3PO4) composition.(B) alkaline corrosion, alkaline corrosion liquid are added by KOH or NaOH
Pure water composition.
Polishing: refer to that monocrystalline silicon sheet surface needs to be improved microdefect, to obtain the polishing of high flat degree chip.The equipment of polishing:
Multiple-piece polishing machine, one chip polishing machine.The mode of polishing: rough polishing: main function removes damaging layer, and general removal amount about exists
10-20um；Essence is thrown: main function improves micro- degree of roughness of wafer surface, general removal amount 1um or less.Primary raw material: polishing
Liquid is by with SiO2Fine outstanding silicic acid glue and NaOH (or KOH or NH4OH it) forms, is divided into rough polishing slurry and essence throws slurry.
Cleaning: many step needs use cleaning in monocrystalline silicon piece process, after the mainly polishing of cleaning here most
Cleaning eventually.The purpose of cleaning is to remove all pollution sources of wafer surface.The mode of cleaning: mainly traditional RCA wet type
Chemical cleaning technology.Primary raw material: H2SO4, H2O2, HF, NH4HOH, Hcl.
Claims (4)
1. the technique that a kind of silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer, it is characterised in that: the technique includes following step
It is rapid:
Cutting
Cut off head, the tail portion of silicon single crystal rod, the length that silicon single crystal rod is cut into；
Outer diameter grinding
Outer diameter barreling is carried out to the monocrystalline silicon after cutting using cylindrical grinder；
Cross grinding
Cross grinding is carried out to the monocrystalline silicon using numerical control end surface of monocrystalline silicon grinding machine；
Slice
The silicon single crystal rod after grinding is cut into the LED reverse mounting type of default geometric dimension；
Chamfering
It is using beveler that the chip taxes and profits side being cut into finishing is in the arc-shaped, prevent Waffer edge rupture and lattice defect from producing
It is raw, increase the flatness of epitaxial layer and photoresist layer；
Grinding
The silicon single crystal wafer after chamfering is ground using twin grinder；The raw material that the grinding uses includes: slurry
Material and sliding supernatant liquid；
Corrosion
The damaging layer formed using chemical attack removal wafer surface by machining stress；
Polishing
The monocrystalline silicon sheet surface after corrosion treatment is polished using polishing machine；
Cleaning
The monocrystalline silicon piece after the polishing is cleaned using RCA wet chemistry method of cleaning.
2. the technique that silicon single crystal rod according to claim 1 is processed into monocrystalline silicon buffing silicon wafer, it is characterised in that described
It is to be cut off using cubic cutting machine in cutting step.
3. the technique that silicon single crystal rod according to claim 1 is processed into monocrystalline silicon buffing silicon wafer, it is characterised in that described
It is to be sliced using interior garden cutting machine or wire cutting machine in slicing step.
4. the technique that silicon single crystal rod according to claim 1 is processed into monocrystalline silicon buffing silicon wafer, it is characterised in that described
The composition of grinding slurry includes: aluminium oxide, chromium sand and water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402195.6A CN108972919A (en) | 2017-06-01 | 2017-06-01 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710402195.6A CN108972919A (en) | 2017-06-01 | 2017-06-01 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
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|---|---|
| CN108972919A true CN108972919A (en) | 2018-12-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710402195.6A Pending CN108972919A (en) | 2017-06-01 | 2017-06-01 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN110385606A (en) * | 2019-08-01 | 2019-10-29 | 西安奕斯伟硅片技术有限公司 | A kind of processing method and dicing method of silicon crystal bar |
| CN110539211A (en) * | 2019-09-04 | 2019-12-06 | 内蒙古中环光伏材料有限公司 | Large-size monocrystalline silicon square rod grinding method |
| WO2020177667A1 (en) * | 2019-03-04 | 2020-09-10 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
| CN113414890A (en) * | 2021-06-08 | 2021-09-21 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
| CN113594108A (en) * | 2020-04-30 | 2021-11-02 | 深圳第三代半导体研究院 | Packaging structure of semiconductor composite heat dissipation material and manufacturing method thereof |
| CN115070973A (en) * | 2022-07-11 | 2022-09-20 | 济南科盛电子有限公司 | Production process of monocrystalline silicon wafer |
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| CN101198727A (en) * | 2005-06-20 | 2008-06-11 | 胜高股份有限公司 | Method for growing silicon single crystal and method for manufacturing silicon wafer |
| CN101656195A (en) * | 2008-08-22 | 2010-02-24 | 北京有色金属研究总院 | Method for manufacturing large-diameter silicon wafer |
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- 2017-06-01 CN CN201710402195.6A patent/CN108972919A/en active Pending
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| CN101198727A (en) * | 2005-06-20 | 2008-06-11 | 胜高股份有限公司 | Method for growing silicon single crystal and method for manufacturing silicon wafer |
| CN101656195A (en) * | 2008-08-22 | 2010-02-24 | 北京有色金属研究总院 | Method for manufacturing large-diameter silicon wafer |
Non-Patent Citations (1)
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020177667A1 (en) * | 2019-03-04 | 2020-09-10 | 常州时创能源股份有限公司 | Preparation method and application of monocrystalline silicon wafer |
| CN110126106A (en) * | 2019-06-17 | 2019-08-16 | 浙江晶特光学科技有限公司 | Wafer processing method |
| CN110385606A (en) * | 2019-08-01 | 2019-10-29 | 西安奕斯伟硅片技术有限公司 | A kind of processing method and dicing method of silicon crystal bar |
| CN110539211A (en) * | 2019-09-04 | 2019-12-06 | 内蒙古中环光伏材料有限公司 | Large-size monocrystalline silicon square rod grinding method |
| CN113594108A (en) * | 2020-04-30 | 2021-11-02 | 深圳第三代半导体研究院 | Packaging structure of semiconductor composite heat dissipation material and manufacturing method thereof |
| CN113414890A (en) * | 2021-06-08 | 2021-09-21 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
| CN113414890B (en) * | 2021-06-08 | 2022-04-19 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
| CN115070973A (en) * | 2022-07-11 | 2022-09-20 | 济南科盛电子有限公司 | Production process of monocrystalline silicon wafer |
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Application publication date: 20181211 |