CN102285010A - Solar-grade silicon chip cut by using diamond wires and cutting method - Google Patents
Solar-grade silicon chip cut by using diamond wires and cutting method Download PDFInfo
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- CN102285010A CN102285010A CN201110258624XA CN201110258624A CN102285010A CN 102285010 A CN102285010 A CN 102285010A CN 201110258624X A CN201110258624X A CN 201110258624XA CN 201110258624 A CN201110258624 A CN 201110258624A CN 102285010 A CN102285010 A CN 102285010A
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Abstract
The invention discloses a solar-grade silicon chip cut by using diamond wires and a cutting method. The silicon chip cutting technology includes the monocrystal round silicon rod technology and the technology for cutting monocrystal square silicon rods by using diamond wires, wherein the monocrystal round silicon rod technology comprises the following steps: qualified round silicon rods are extracted and barreled by an extracting machine, and a mirror surface effect us achieved after flat grinding and polishing; and the technology for cutting monocrystal square silicon rods by using diamond wires comprises the steps: the surface of the silicon rods undergoing flat grinding and polishing is cleaned, then the silicon rods are bonded on resin rods, the resin rods are fixed on an adhesive board, the silicon rods and the adhesive board are arranged on a diamond wire cutting machine to be cut, and the solar-grade silicon chips are formed by the diamond wire cutting machine. As for the solar-grade silicon chip cut by using diamond wires, the processing technology is advanced and simple, the control precision is high, the silicon powder can be recycled, the manufacturing cost of the silicon sheets are reduced greatly, the phenomenon of breaking of wires are reduced, the production efficiency and the surface quality of the chips are improved, and the qualification rate is increased.
Description
Technical field
The present invention relates to a kind of solar level silicon wafer thin slice and cutting method thereof of using the diamond wire cutting.
Background technology
Solar level battery silicon wafer is that the silicon single crystal rod cutting is formed at present.And silicon materials shortage in the market, price is higher.In order to reduce production costs, a lot of enterprises are all in the continuous effort of sheet.The silicon suitable for solar purposes sheet thickness that domestic at present, international most of enterprise produces is at 200 ± 20 um, and the direction of main flow sheet is that thickness is the silicon chip of 180 ± 20 um.Application number 200810019894.3 has been announced a kind of ultra-thin solar silicon slice and cutting technique thereof, silicon wafer thickness is between the 165-195um, angularity is less than 75um, must use the mortar that stirs by suspension and corundum during cutting, change simultaneously tradition with four jiaos of emery wheel barreling be the operation of fillet be adopt silicon crystal bar evolution machine by twice evolution, chamfering with the silicon wafer pole directly cut into the cross section be square, four jiaos be identical 45 to spend the anistree square cylinder of chamferings, and then cut into ultra-thin solar silicon slice.
There is following shortcoming in this ultra-thin solar level silicon wafer:
(1) still there is the damage layer in silicon rod through evolution and chamfering rear surface, and the surface does not reach mirror effect, may cause broken string in cutting process, increases fragment rate.
The mortar that must use suspension and corundum to stir when (2) cutting, mortar are difficult to recycle, and cause serious environmental to pollute.
(3) this free type mortar cutting is difficult to solve the problems that there are a large amount of damage layers in silicon chip surface, and total thickness variations (TTV), angularity (WARP), flexibility (BOM) index all can be bigger than normal, limited sheet.
Summary of the invention
At the problem that ultra-thin solar silicon slice in the prior art exists, the technical problem to be solved in the present invention is by using the diamond wire cutting that a kind of low cost of manufacture, the excellent solar level silicon wafer thin slice of performance are provided.
The invention provides the technical scheme that a kind of silicon wafer thin slice that uses diamond wire cutting to produce taked is: described silicon wafer sheet thickness 160 ± 15um, and silicon chip total thickness variations (TTV) is less than 10um, and flexibility (BOW) is less than 40um.
The present invention also provides a kind of use diamond wire cutting solar level silicon wafer thin slice cutting technique, described silicon wafer thin slice cutting process method comprises circular silicon rod technology of monocrystalline and the square silicon rod diamond wire of monocrystalline slice process, the circular silicon rod technology of described monocrystalline is that the circular silicon rod that will be up to the standards carries out the evolution barreling with the evolution machine, then obtain to meet the square silicon rod of diamond wire cutting technique through plain grinding polishing back, square silicon rod surface reaches mirror effect, roughness is less than 0.2um, and the silicon rod depth of parallelism is less than 0.02um; The square silicon rod diamond wire of described monocrystalline slice process is after the silicon rod that plain grinding polishes is passed through cleaning surfaces, be bonded on the resin streak, select the fat bar because of reaching on the sizing plate, compress 0.5-3 hour with the 5-10kg compression weight, static placement is after 6 hours, silicon rod is installed on the diamond wire cutting machine together with the sizing plate cuts into slices, the diamond wire of 138-150um is used in section, the diamond wire Trace speed is 1000-1400mm/min during section, workbench decline 0.3-0.8mm/min, diamond wire cutting machine guided wheel slot uses the special-purpose cutting of diamond wire liquid apart from 320-340um during cutting.
The special-purpose cutting of described diamond wire liquid is stirred through the stirring at low speed cylinder by the defoamer of the emulsifying agent of the antirust agent of 19～59% polyethylene glycol, 40.5～80.5% pure water, 0.05～0.2%wt, 0.05～0.2%wt and 0.3～0.5%wt and mixed in 2 hours.Close 1.01 ~ the 1.08g/cm of described diamond wire special-purpose cutting liquid
3, viscosity 10 ~ 20 mm
2S, coolant rate 300-350 L/min, coolant temperature is in 20-30 ℃ of scope.
Table 1 is for adopting silicon wafer sheet thickness, thickness deviation and the geometric parameter of cutting method processing of the present invention
After adopting technique scheme, make the silicon rod surface form minute surface owing to adopt polisher lapper to carry out plane polishing, adopt the diamond wire cutting technique, cut into solar level silicon wafer thin slice, its advantage is:
(1) solar level silicon wafer thin slice is all formed by the cutting of diamond wire slicer, processing technology elder generation and then simple, and the control accuracy height, silica flour can be recycled, and greatly reduces the manufacturing cost of silicon chip.
(2) solar level silicon wafer thin slice is in manufacture process, circular silicon rod is through the laggard parallel planes grinding and polishing of evolution barreling, make the silicon rod surface reach mirror effect, reduced the broken string phenomenon in the cutting process, improved production efficiency, sheet surface is bright and clean, smooth, indefectible, has improved product qualified rate.
(3) because the diamond wire cutting technique of adopt optimizing makes the thickness of silicon wafer drop to 160um from 200um, and the flexibility that guarantees silicon wafer is less than 40um, and the silicon wafer quantum of output of per kilogram silicon wafer pole increases, and economic benefit is greatly improved.
The specific embodiment
Present embodiment is that 125 * 125mm solar level silicon wafer thin slice is, silicon wafer thickness 160+/-15um,
A kind of use diamond wire cutting solar level silicon wafer thin slice cutting technique of the present invention, described silicon wafer thin slice cutting technique comprises: circular silicon rod technology of monocrystalline and the square silicon rod diamond wire of monocrystalline slice process, the circular silicon rod technology of described monocrystalline is that the circular silicon rod that will be up to the standards carries out the evolution barreling with the evolution machine, then through obtaining to meet the square silicon rod of diamond wire cutting technique behind the gyro-finishing of plane, square silicon rod surface reaches mirror effect, roughness is less than 0.2um, and the silicon rod depth of parallelism is less than 0.02um; The square silicon rod diamond wire of described monocrystalline slice process is through behind the cleaning surfaces with the silicon rod behind the evolution gyro-finishing, be bonded on the resin streak, compress 1-2 hour with the 5-10kg compression weight, take off counterweight, static placement 6 hours then is installed on the diamond wire cutting machine and cuts into slices, the diamond wire of 150um is used in section, the diamond wire Trace speed is 1200 mm/min during section, and the workbench decrease speed is at 0.65 mm/min, and diamond wire cutting machine guided wheel slot is apart from 320um; Cooling fluid adopts the special-purpose cutting of diamond wire liquid during section, the special-purpose cutting of described diamond wire liquid density 1.01 ~ 1.08g/cm
3, viscosity 10 ~ 20 mm
2S, coolant rate 320 L/min, coolant temperature is in 20-30 ℃ of scope.
Silicon wafer sheet thickness, thickness deviation and geometric parameter by above-mentioned cutting method processing
Because the thickness of present embodiment is 160 ± 15um, thinner than existing regular solar level silicon wafer 200um ± 20um, per kilogram silicon material can have more 10 as calculated, per tonly has more 10000, calculates with 12 yuan/sheet, can increase income 120,000 yuan.
Claims (2)
1. solar level silicon wafer thin slice that uses diamond wire cutting, it is characterized in that: the thickness of silicon chip is 160 ± 15um, and total thickness variations (TTV) is less than 10um, and flexibility is less than 40um.
2. cutting method of using the solar level silicon wafer thin slice of diamond wire cutting, it is characterized in that: described silicon wafer thin slice cutting process method comprises circular silicon rod technology of monocrystalline and the square silicon rod diamond wire of monocrystalline slice process, the circular silicon rod technology of described monocrystalline is that the circular silicon rod that will be up to the standards carries out the evolution barreling with the evolution machine, then obtain to meet the square silicon rod of diamond wire cutting technique through plain grinding polishing back, square silicon rod surface reaches mirror effect, roughness is less than 0.2um, and the silicon rod depth of parallelism is less than 0.02um; The square silicon rod diamond wire of described monocrystalline slice process is after the silicon rod that plain grinding polishes is passed through cleaning surfaces, be bonded on the resin streak, select the fat bar because of reaching on the sizing plate, compress 0.5-3 hour with the 5-10kg compression weight, static placement is after 6 hours, silicon rod is installed on the diamond wire cutting machine together with the sizing plate cuts into slices, the diamond wire of 138-150um is used in section, the diamond wire Trace speed is 1000-1400mm/min during section, workbench decline 0.3-0.8mm/min, diamond wire cutting machine guided wheel slot uses the special-purpose cutting of diamond wire liquid apart from 320-340um during cutting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110258624XA CN102285010B (en) | 2011-08-08 | 2011-09-04 | Solar-grade silicon chip cut by using diamond wires and cutting method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110224783 | 2011-08-08 | ||
| CN201110224783.8 | 2011-08-08 | ||
| CN201110258624XA CN102285010B (en) | 2011-08-08 | 2011-09-04 | Solar-grade silicon chip cut by using diamond wires and cutting method |
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| Publication Number | Publication Date |
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| CN102285010A true CN102285010A (en) | 2011-12-21 |
| CN102285010B CN102285010B (en) | 2012-10-03 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102555090A (en) * | 2012-02-10 | 2012-07-11 | 长沙岱勒新材料科技有限公司 | Method for cutting crystal by aid of diamond wires |
| CN102672832A (en) * | 2012-06-08 | 2012-09-19 | 英利能源（中国）有限公司 | Method for eliminating defects of head part and tail part of battery silicon block |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
| CN104195643A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon rod sticking improving process |
| CN104476686A (en) * | 2014-10-31 | 2015-04-01 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| US9333673B2 (en) | 2013-09-26 | 2016-05-10 | Siltronic Ag | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| CN106182478A (en) * | 2016-08-24 | 2016-12-07 | 安徽正田能源科技有限公司 | A kind of cutting technique of single gold silicon silicon body |
| CN107415067A (en) * | 2017-07-24 | 2017-12-01 | 卡姆丹克太阳能（江苏）有限公司 | A kind of method for cutting evolution to monocrystalline silicon round rod using diamond wire |
| CN108032451A (en) * | 2017-12-07 | 2018-05-15 | 苏州阿特斯阳光电力科技有限公司 | A kind of silicon rod cutting method |
| CN113878734A (en) * | 2020-07-03 | 2022-01-04 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN114227173A (en) * | 2021-12-30 | 2022-03-25 | 中航工业南京伺服控制系统有限公司 | Process method for improving machining efficiency of jet sheet |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102555090A (en) * | 2012-02-10 | 2012-07-11 | 长沙岱勒新材料科技有限公司 | Method for cutting crystal by aid of diamond wires |
| CN102555090B (en) * | 2012-02-10 | 2015-10-21 | 长沙岱勒新材料科技有限公司 | By the method for cutting crystal by aid of diamond wires |
| CN102672832A (en) * | 2012-06-08 | 2012-09-19 | 英利能源（中国）有限公司 | Method for eliminating defects of head part and tail part of battery silicon block |
| TWI556933B (en) * | 2013-09-26 | 2016-11-11 | 世創電子材料公司 | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| US9333673B2 (en) | 2013-09-26 | 2016-05-10 | Siltronic Ag | Method for simultaneously cutting a multiplicity of wafers from a workpiece |
| CN103722625A (en) * | 2013-12-25 | 2014-04-16 | 山东天岳先进材料科技有限公司 | Method and equipment for cutting large-diameter silicon carbide single crystals by aid of diamond wires |
| CN103722625B (en) * | 2013-12-25 | 2015-12-09 | 山东天岳先进材料科技有限公司 | A kind of method and apparatus utilizing diamond wire saw major diameter single-crystal silicon carbide |
| CN104195643A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon rod sticking improving process |
| CN104476686A (en) * | 2014-10-31 | 2015-04-01 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| CN104476686B (en) * | 2014-10-31 | 2017-01-25 | 内蒙古中环光伏材料有限公司 | Method for cutting solar-grade silicon wafers through ultra-high-density diamond wires |
| CN106182478A (en) * | 2016-08-24 | 2016-12-07 | 安徽正田能源科技有限公司 | A kind of cutting technique of single gold silicon silicon body |
| CN107415067A (en) * | 2017-07-24 | 2017-12-01 | 卡姆丹克太阳能（江苏）有限公司 | A kind of method for cutting evolution to monocrystalline silicon round rod using diamond wire |
| CN107415067B (en) * | 2017-07-24 | 2019-03-22 | 卡姆丹克太阳能（江苏）有限公司 | A method of evolution being cut to monocrystalline silicon round rod using diamond wire |
| CN108032451A (en) * | 2017-12-07 | 2018-05-15 | 苏州阿特斯阳光电力科技有限公司 | A kind of silicon rod cutting method |
| CN108032451B (en) * | 2017-12-07 | 2020-07-10 | 苏州阿特斯阳光电力科技有限公司 | Silicon rod cutting method |
| CN113878734A (en) * | 2020-07-03 | 2022-01-04 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN113878734B (en) * | 2020-07-03 | 2024-02-20 | 内蒙古中环光伏材料有限公司 | Large-size silicon wafer material lifting process |
| CN114227173A (en) * | 2021-12-30 | 2022-03-25 | 中航工业南京伺服控制系统有限公司 | Process method for improving machining efficiency of jet sheet |
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| CN102285010B (en) | 2012-10-03 |
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