CN214725422U - Diamond wire is electroplated in high-efficient cutting - Google Patents
Diamond wire is electroplated in high-efficient cutting Download PDFInfo
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- CN214725422U CN214725422U CN202022850060.6U CN202022850060U CN214725422U CN 214725422 U CN214725422 U CN 214725422U CN 202022850060 U CN202022850060 U CN 202022850060U CN 214725422 U CN214725422 U CN 214725422U
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Abstract
The utility model discloses a diamond wire is electroplated in high efficiency cutting, which comprises a bus, the surface plating of generating line has first plating layer, it has a plurality of diamond particles, a plurality of to inlay on the first plating layer diamond particles's surface plating has the second plating layer, and the distance between two adjacent diamond particles is 3 ~ 10 mu m in a plurality of diamond particles, and diamond particles's the sword height of going out is 1/5 ~ 2/3 of diamond particles particle diameter D50, and the contained angle alpha between diamond particles and the generating line is at 30 ~ 150. The diamond particle distribution structure of the utility model can enhance the fixing force between the particles and the bus bar and improve the cutting capability of the diamond wire; on the other hand, the carrying capacity of the silicon powder in the cutting process can be effectively improved, the number of diamond particles participating in effective cutting is ensured, and the purpose of improving the cutting efficiency is achieved.
Description
Technical Field
The utility model relates to a diamond wire technical field, concretely relates to diamond wire is electroplated in high efficiency cutting.
Background
With the development of the solar photovoltaic industry, the processing of crystalline silicon is more and more emphasized, and currently, the silicon rod is cut mainly by diamond wires. The existing silicon rod cutting time is generally 2-3 hours, the efficiency cannot meet the requirement, and from the angle of the diamond wire, the distribution of diamond particles, the particle density and the edge height of the particles can influence the cutting capability of a steel wire. When the diamond wire is used for cutting the silicon rod, the wire breakage in the cutting process can be caused by uneven particle distribution, silicon materials are wasted, the yield of finished products is influenced, and the cutting efficiency is reduced due to the fact that the wire breakage is processed. The height of the edge of the particles determines the number of particles participating in effective cutting and the capability of carrying silicon powder in the cutting process, and finally influences the cutting capability of the steel wire.
At present, diamond wires have the defects of uneven particle distribution, ineffective cutting participation of the edge height of particles, weak silicon powder carrying capacity, reduced cutting capacity, influence on the surface quality of silicon wafers, and low cutting efficiency and silicon wafer yield.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: the utility model aims at providing a diamond wire is electroplated in high-efficient cutting has solved present diamond wire and has had granule uneven distribution, and the play sword height of granule can not effectively participate in the cutting, carries silica flour ability weak point, leads to cutting ability to descend, influences silicon chip surface quality, problem that cutting efficiency and silicon chip yield are low.
The technical scheme is as follows: the utility model relates to a diamond wire is electroplated in high-efficient cutting, which comprises a bus, the surface plating of generating line has first plating layer, it has a plurality of diamond particles, and is a plurality of to have inlayed on the first plating layer diamond particle's surface plating has the second plating layer, and distance between two adjacent diamond particles is 3 ~ 10 mu m in a plurality of diamond particles, and diamond particle's the sword height of going out is 1/5 ~ 2/3 of diamond particle diameter D50, and the contained angle alpha between diamond particle and the generating line is at 30 ~ 150.
Furthermore, the diameter of the bus is 40-65 μm.
Further, the first plating layer and the second plating layer have the same thickness.
Furthermore, the thickness of the first electroplated layer and the thickness of the second electroplated layer are both 3-6 mu m.
Further, the bus bar is a steel wire.
Furthermore, the first electroplated layer and the second electroplated layer are both nickel layers.
Has the advantages that: the diamond particle distribution structure of the utility model can enhance the fixing force between the particles and the bus bar and improve the cutting capability of the diamond wire; on the other hand, the carrying capacity of the silicon powder in the cutting process can be effectively improved, the number of diamond particles participating in effective cutting is ensured, and the purpose of improving the cutting efficiency is achieved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic view of the angle between the diamond particles and the generatrix.
Detailed Description
The invention will be further described with reference to the following figures and examples:
as shown in fig. 1 and 2, the utility model relates to a diamond wire is electroplated in high-efficient cutting, including generating line 1, generating line 1 is the steel wire line, its diameter is 40 ~ 65 μm, the surface plating of generating line 1 has first plating layer 2, it has a plurality of diamond particles 3 to inlay on first plating layer 2, the surface plating of a plurality of diamond particles 3 has second plating layer 4, first plating layer 2 and second plating layer 4's thickness is the same, the thickness of first plating layer 2 and second plating layer 4 is 3 ~ 6 μm, and first plating layer 2 and second plating layer 4 are the nickel layer, the distance between two adjacent diamond particles in a plurality of diamond particles 3 is 3 ~ 10 μm, this distribution form can strengthen the power of fixation between diamond particles 3 and generating line 1, improve cutting ability;
the cutting height of the diamond particles 3 is 1/5-2/3 of the grain size D50 of the diamond particles 3, so that the number of the diamond particles 3 participating in effective cutting is ensured, and the purpose of improving the cutting efficiency is achieved; the included angle alpha between the diamond particles 3 and the bus 1 is 30-150 degrees, so that the carrying capacity of silicon powder in the cutting process is improved; the diamond particles 3 distribution structure of the utility model can enhance the fixing force between the diamond particles 3 and the bus 1 and improve the cutting ability of the diamond wire; on the other hand, the carrying capacity of the silicon powder in the cutting process can be effectively improved, the number of the diamond particles 3 participating in effective cutting is ensured, and the purpose of improving the cutting efficiency is achieved.
Claims (6)
1. The utility model provides a diamond wire is electroplated in high-efficient cutting, includes the generating line, its characterized in that: the surface of the bus is plated with a first electroplated layer, a plurality of diamond particles are embedded on the first electroplated layer, a plurality of second electroplated layers are plated on the surfaces of the diamond particles, the distance between every two adjacent diamond particles in the diamond particles is 3-10 mu m, the cutting height of the diamond particles is 1/5-2/3 of the particle size D50 of the diamond particles, and the included angle alpha between the diamond particles and the bus is 30-150 degrees.
2. The high-efficiency cutting electroplated diamond wire as claimed in claim 1, wherein: the diameter of the bus is 40-65 mu m.
3. The high-efficiency cutting electroplated diamond wire as claimed in claim 1, wherein: the first plating layer and the second plating layer have the same thickness.
4. The high-efficiency cutting electroplated diamond wire as claimed in claim 1, wherein: the thickness of the first electroplated layer and the thickness of the second electroplated layer are both 3-6 mu m.
5. The high-efficiency cutting electroplated diamond wire as claimed in claim 1, wherein: the bus is a steel wire.
6. The high-efficiency cutting electroplated diamond wire of claim 4, characterized in that: the first electroplated layer and the second electroplated layer are both nickel layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022850060.6U CN214725422U (en) | 2020-12-02 | 2020-12-02 | Diamond wire is electroplated in high-efficient cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022850060.6U CN214725422U (en) | 2020-12-02 | 2020-12-02 | Diamond wire is electroplated in high-efficient cutting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214725422U true CN214725422U (en) | 2021-11-16 |
Family
ID=78617644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022850060.6U Active CN214725422U (en) | 2020-12-02 | 2020-12-02 | Diamond wire is electroplated in high-efficient cutting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214725422U (en) |
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2020
- 2020-12-02 CN CN202022850060.6U patent/CN214725422U/en active Active
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