CN101241939A

CN101241939A - Ultra-thin solar silicon slice and its cutting technology

Info

Publication number: CN101241939A
Application number: CNA2008100198943A
Authority: CN
Inventors: 吴伟成; 毛和璜; 李云霞
Original assignee: YOUZE TECHNOLOGY Co Ltd
Priority date: 2008-03-21
Filing date: 2008-03-21
Publication date: 2008-08-13
Anticipated expiration: 2028-03-21
Also published as: CN100565935C

Abstract

The invention relates to an ultra-thin sun energy level silicon chip and cutting technology thereof which belongs to the solar cell field. The body of the ultra-thin sun energy level silicon chip is the square slice composed of upper and lower planes in parallel, the foursquare of the square slice is four same chamfer angle of 45 DEG. The distance of the upper and lower planes is in the scope of 165-195 um, the angularity is less than 75 um, and the surface of the plane is bright, flat and flawless. The ultra-thin sun energy level silicon chip cutting technology adopts a silicon wafer stick excavator to directly cut silicon wafer stick into octagonal square cylinder whose cross-section is square and foursquare is the same chamfer angle of 45 DEG, the cutting excess stock is lump which can be reused by scrap. It also adopts optimized cutting technology to cut into the ultra-thin sun energy level silicon chip on the multi-thread cutting machine so as to guarantee the manufacturing quality of the ultra-thin sun energy level silicon chip, improve productivity, and reduce the manufacturing cost of ultra-thin sun energy level silicon chip.

Description

Ultra-thin solar silicon slice and cutting technique thereof

Technical field

The present invention relates to a kind of ultra-thin solar silicon slice and cutting technique thereof, belong to area of solar cell.

Background technology

The solar level cell silicon chip is that the circular silicon rod cutting of monocrystalline is formed at present.Domestic silicon wafer material is rare, costs an arm and a leg, and along with the extensive use of regenerative resource, the market demand of solar energy-level silicon wafer is increasing.Traditional solar silicon wafers that promptly generally uses in the world at present is four jiaos of square sheets as fillet, thickness is more than 200 μ m, the procedure of this solar energy-level silicon wafer is: earlier circular silicon rod evolution being cut into the cross section is square, four jiaos of cylinders that leave base rod circle rib, then with emery wheel that the barreling of base rod circle rib is very little to the standard round angle square again, stock removal is about 2mm-4mm.There is following shortcoming in the solar energy-level silicon wafer of this cross section shape: the one, and it is Powdered that the scrap that gets off is processed in barreling, the contaminated environment in air of waving, and can not recycling; The 2nd, barreling handling ease damage cylinder circle rib collapses quality problems such as limit and explosion, thereby has reduced the qualification rate of finished product.

Summary of the invention

It is easy that the technical problem to be solved in the present invention provides a kind of processing, product percent of pass height, the ultra-thin solar silicon slice of low cost of manufacture.

The technical scheme that realizes above-mentioned purpose is: a kind of ultra-thin solar silicon slice is provided, and its body is the square sheet of being made up of upper and lower two parallel planes, and square sheet is four 45 ° of identical chamferings for four jiaos.The distance on upper and lower two planes of body is in 165 μ m-195 mu m ranges, and angularity is less than 75 μ m, any surface finish, smooth, indefectible.

The present invention also provides a kind of cutting technique of ultra-thin solar silicon slice, its cutting action is made up of circular silicon rod evolution of monocrystalline and the square silicon rod of monocrystalline two procedures of cutting into slices, circular silicon rod evolution cutting technique is that the circular silicon rod that will be up to the standards is bonded in the crystal bar holder, then be installed on the workbench of silicon crystal bar evolution machine, by twice evolution and twice chamfering, cutting out four jiaos is four 45 ° of identical square silicon rods of chamfering, steel wire speed is the 9-12 meter per second when evolution and chamfering, work speed 600-800 micron/minute; Square silicon rod section cutting technique be with behind the evolution four jiaos be that the square silicon rod of four 45 ° of identical chamferings is after ultrasonic cleaning and high pure nitrogen dry up, stick on the glass plate, compress 2-3 after individual hour with the heavy iron block of 2-2.5kg, take off iron block, static placement 8-10 hour then is installed on the multi-line cutting machine and cuts into slices.φ 110-130 μ m steel wire is used in the section section, steel wire Trace speed 550-650 rice during section/minute, workpiece feed speed 220-350 μ m/min, guide roller of multi-line cutting machine slot pitch 320-345 μ m; Must use the mortar that stirs by suspension and corundum during cutting.

The slurry density of above-mentioned mortar is a 1.60-1.68 gram/cubic centimetre, and the mortar flow is 60-110L/min, and mortar temperature is in 20-30 ℃ of scope.

After adopting technique scheme, change tradition with four jiaos of emery wheel barreling be the operation of fillet be employing silicon crystal bar evolution machine with the silicon wafer pole directly cut into the cross section be square, four jiaos be the anistree square cylinder of identical 45 ° of chamferings, and adopt the optimization cutting technique on multi-line cutting machine, to cut into ultra-thin solar silicon slice, its advantage is: (1) ultra-thin solar silicon slice is formed by the precision machine tool cutting fully, processing technology elder generation and then simple, Functionality, quality and appealing design, precision height, the cutting clout is recyclable to be utilized again, has reduced the manufacturing cost of product.(2) ultra-thin solar silicon slice is in manufacture process, circular silicon rod evolution is on the workbench of silicon crystal bar evolution machine, finish by twice evolution and twice chamfering, exempted the manufacturing procedure of emery wheel barreling semi-finished product silicon crystal bar cylinder circle rib, corner angle no longer taking place collapse limit and explosion phenomenon, has improved the qualification rate of production efficiency and finished product.(3) because the ultra-thin solar silicon slice cutting technique of adopt optimizing makes the thickness of silicon chip reduce to 180 μ m from 200 μ m, and the angularity that guarantees its body is less than 75 μ m, and the silicon chip quantum of output of per kilogram silicon wafer pole increases, and economic benefit is greatly improved.

Description of drawings

Fig. 1 is a schematic perspective view of the present invention;

Fig. 2 is the main schematic diagram of looking of the present invention;

Fig. 3 is the vertical view of Fig. 2;

Fig. 4 is a cutting technique schematic diagram of the present invention.

Embodiment

The present invention is further detailed explanation below in conjunction with drawings and Examples.

(embodiment 1)

See Fig. 1, Fig. 2 and Figure 3 shows that ultra-thin solar silicon slice schematic perspective view, front view and vertical view.Present embodiment is the ultra-thin solar silicon slice of specification 125mm * 125mm, is made up of upper and lower two

parallel planes

2,3, and its four jiao 4 is four 45 ° of identical chamferings.The distance on upper and lower two

planes

2,3 is in 165 μ m-195 mu m ranges, and angularity is less than 75 μ m, any surface finish, smooth, indefectible.

See and Figure 4 shows that ultra-thin solar silicon slice cutting technique schematic diagram.

The processing method of present embodiment is to adopt silicon crystal bar evolution machine with A=Φ 156mm twice evolution of silicon single crystal pole and twice chamfering, be cut to the cross section and be C=125mm square, four jiaos be that four 45 ° of identical chamferings, opposite side distance are from being the anistree square cylinder of B=147.02mm.The cutting technique parameter of evolution and chamfering is steel wire inlet wire speed 11 meter per seconds, 700 microns/minute of work speeds.

Square silicon rod behind the evolution after ultrasonic cleaning and high pure nitrogen dry up, is sticked on the glass plate, compress 2 hours with the heavy iron block of 2kg after, take off iron block, static placement 8 hours then is installed on the multi-line cutting machine and cuts into slices.φ 120 μ m steel wires are used in section, 280 meters/minute of steel wire Trace speeds, and the workpiece feed speed is 300 μ m/min, and cutting into thickness is 180 μ m ± 15 μ m, and angularity is less than the ultra-thin solar silicon slice of 75 μ m.

The guide roller of multi-line cutting machine slot pitch also is the important parameter of decision silicon wafer thickness, and the guided wheel slot distance of this process choice is 330 μ m.

Need be brought mortar with workpiece into contact when steel wire was walked at a high speed, and mortar is attached on the steel wire, by friction cutting silicon chip.Proportioning density, viscosity and flow thereof and the silicon chip cut quality of mortar have substantial connection, and this cutting technique has adopted that Japanese Nan Xing company produces, the corundum of model 1500#, and its and suspension are stirred, and one-tenth density is the mortar of 1.60 gram/cubic centimetres.The mortar flow need be controlled, and carries out reasonable distribution, and the mortar flow of this process choice is 65L/min.The mortar temperature height also can influence silicon chip crudy and cutting efficiency, and the mortar temperature of this process choice is 25 ℃.

Because the thickness of present embodiment is 180 μ m ± 15 μ m, thinner than existing regular solar level silicon wafer 200 μ m ± 15 μ m, per kilogram can cut 4 more as calculated, per ton can fecund 4000, if every is 55 yuan, can increase income 220,000 yuan.

(embodiment 2)

Embodiment 2 is the ultra-thin solar silicon slice of specification 156mm * 156mm, and its main body 1 is made up of upper and lower two

parallel planes

planes

The processing method of present embodiment is to adopt silicon crystal bar evolution machine with A=Φ 203mm twice evolution of silicon single crystal pole and twice chamfering, be cut to the cross section and be C=156mm square, four jiaos be four 45 ° of identical chamferings, opposite side distance is from the anistree square cylinder that is B=195mm.The cutting technique parameter of evolution and chamfering is steel wire speed 11 meter per seconds, 700 microns/minute of work speeds.

Square silicon rod behind the evolution after ultrasonic cleaning and high pure nitrogen dry up, is sticked on the glass plate, compress 2.8 hours with the heavy iron block of 2kg after, take off iron block, static placement 10 hours then is installed on the multi-line cutting machine and cuts into slices.φ 120 μ m steel wires are used in section, and the steel wire Trace speed is 600 meters/minute during section, workpiece feed speed 260 μ m/min, and cutting into thickness is 180 μ m ± 15 μ m, angularity is less than the ultra-thin solar silicon slice of 75 μ m.

The guide roller of multi-line cutting machine slot pitch of this process choice is 330 μ m.

The mortar flow of this process choice is 80L/min, and the mortar temperature of selection is 25 ℃.

Its thickness of present embodiment is thinner than existing regular solar level silicon wafer, and per kilogram can cut 5 more as calculated, per ton can fecund 5000, if every be 50 yuan, can increase income 250,000 yuan.

Claims

1, a kind of ultra-thin solar silicon slice, its body (1) are the square sheet of being made up of upper and lower two parallel planes (2,3), it is characterized in that: square sheet four jiaos (4) is four 45 ° of identical chamferings.

2, ultra-thin solar silicon slice according to claim 1 is characterized in that: the distance on upper and lower two planes (2,3) of described body (1) is in 165 μ m-195 mu m ranges, and angularity is less than 75 μ m, any surface finish, smooth, indefectible.

3, a kind of ultra-thin solar silicon slice cutting technique is characterized in that: cutting technique is made up of circular silicon rod evolution and square silicon rod two procedures of cutting into slices; Circular silicon rod evolution cutting technique is that the circular silicon rod that will be up to the standards is bonded in the crystal bar holder, then is installed on the workbench of silicon crystal bar evolution machine, and through twice evolution and twice chamfering, cutting out four jiaos is the square silicon rod of four 45 ° of identical chamferings; Steel wire speed is the 9-12 meter per second when evolution and chamfering, work speed 600-800 micron/minute; Square silicon rod section cutting technique be with behind the evolution four jiaos be that the square silicon rod of four identical 45 ° of chamferings is after ultrasonic cleaning and high pure nitrogen dry up, stick on the glass plate, after compressing 2-3 hour with the heavy iron block of 2-2.5kg, take off iron block, static placement 8-10 hour then is installed on the multi-line cutting machine and cuts into slices; φ 100-130 μ m steel wire is used in section, steel wire Trace speed 550-650 rice/minute, workpiece feed speed 220-350 μ m/min, guide roller of multi-line cutting machine slot pitch 320-345 μ m; Must use the mortar that stirs by suspension and corundum during cutting.

4, a kind of ultra-thin solar silicon slice cutting technique according to claim 3 is characterized in that slurry density is a 1.60-1.68 gram/cubic centimetre, and the mortar flow is 60-110L/min, and mortar temperature is in 20-30 ℃ of scope.