CN109227975A - A kind of cutting method improving silicon chip edge warpage - Google Patents
A kind of cutting method improving silicon chip edge warpage Download PDFInfo
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- CN109227975A CN109227975A CN201811104224.1A CN201811104224A CN109227975A CN 109227975 A CN109227975 A CN 109227975A CN 201811104224 A CN201811104224 A CN 201811104224A CN 109227975 A CN109227975 A CN 109227975A
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- Prior art keywords
- mortar
- flow
- cut
- depth
- silicon chip
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
Abstract
The present invention relates to semiconductor processing technology fields.A kind of cutting method improving silicon chip edge warpage, at depth of cut is the position 0mm-8mm, and the flow of mortar is 68L/min-70L/min；When depth of cut is at the position 8mm-18mm, the flow of mortar linearly successively decreases, and the flow of mortar is (2* depth of cut value+52) L/min；When depth of cut is at the position 18mm-98mm, the flow of mortar is 80L/min；When depth of cut is at the position 98mm-122mm, the flow of mortar is successively gradually decremented to 61L/min from 80L/min；When depth of cut is at the position 122mm-A, mortar flow is 61L/min, and A is the maximum outside diameter value of crystal bar, A=130mm ± 2mm.This patent passes through mortar flow of the optimization in different depths of cut, hence it is evident that the problem of improving silicon chip edge warpage.
Description
Technical field
The present invention relates to semiconductor processing technology fields, and in particular to the cutting method of silicon wafer.
Background technique
Multi-wire wafer cutting technique is more advanced silicon chip process technology in the world at present, its basic principle is to pass through
The steel wire of high-speed motion drives the cutting mortar being attached on steel wire to rub silicon rod, to reach the effect of cutting crystal bar
Fruit.
Bad warpage is to influence overall yield maximum one.By previous data validation, warpage position bigger than normal mainly collects
In in silicon wafer enter the edge of a knife and the out position of the edge of a knife.How to improve that silicon wafer enters the edge of a knife and the warpage of knife-edge positions is to cut through at present out
There is an urgent need to one of overcome the problems, such as in journey.Enter the edge of a knife due to being difficult precise positioning when steel wire just contacts crystal bar, institute
With often universal bigger than normal in the warpage of just incision crystal bar, increased flow capacity will lead to stria, and flow is too small not to can guarantee normal cutting.
Out the edge of a knife is due to processing latter stage to crystal bar, and the impurity effects such as silicon bits cut down in mortar mortar cutting horizontal is set in addition
The presence of rouge version, causes cutting power to decline, and will lead to sliver again entering edge of a knife enlargement discharge, thus out the edge of a knife, enter edge of a knife institute
Caused edge warping is always the problem in industry.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of cutting method for improving silicon chip edge warpage, with solution
At least one certainly above-mentioned technical problem.
The technical scheme is that a kind of cutting method for improving silicon chip edge warpage, which is characterized in that deep in cutting
Degree is at the position 0mm-8mm, and the flow of mortar remains steady state, and the flow of mortar is 68L/min-70L/min；
When depth of cut is at the position 8mm-18mm, the flow of mortar linearly successively decreases, and the flow of mortar is that (2* is cut
Cut depth value+52) L/min；
When depth of cut is at the position 18mm-98mm, the flow of mortar is 80L/min；
When depth of cut is at the position 98mm-122mm, the flow of mortar is successively gradually decremented to 61L/ from 80L/min
min；
When depth of cut is at the position 122mm-A, mortar flow is 61L/min, and A is the maximum outside diameter value of crystal bar, A=
130mm±2mm。
When this patent is directed to the crystal bar cutting that outer diameter is 130mm ± 2mm, by optimizing in different depths of cut
Mortar flow, hence it is evident that improve silicon chip edge warpage the problem of.
It further preferably, is at the position 0mm-8mm in depth of cut, the flow of mortar is 70L/min；
When depth of cut is at the position 98mm, the flow of mortar is 80L/min；
When depth of cut is at the position 100mm, the flow of mortar is 79.5L/min；
When depth of cut is at the position 102mm, the flow of mortar is 78.5L/min；
When depth of cut is at the position 104mm, the flow of mortar is 77L/min；
When depth of cut is at the position 106mm, the flow of mortar is 75L/min；
When depth of cut is at the position 108mm, the flow of mortar is 73L/min；
When depth of cut is at the position 110mm, the flow of mortar is 71L/min；
When depth of cut is at the position 112mm, the flow of mortar is 69L/min；
When depth of cut is at the position 114mm, the flow of mortar is 67L/min；
When depth of cut is at the position 116mm, the flow of mortar is 65L/min；
When depth of cut is at the position 118mm, the flow of mortar is 63L/min；
When depth of cut is at the position 120mm, the flow of mortar is 61.5L/min.
The edge warping rate for the silicon wafer being cut into using above-mentioned data is significantly improved.After above-mentioned mortar flow, stick up
Bent fraction defective is reduced to 0.10% or so from traditional 0.18%.In the case where remaining parameter constant, under above-mentioned parameter
The cutting effect of silicon wafer is most beneficial.
Crystal bar is cut using cutting steel wire, the speed of cutting steel wire is 600m/min, and the tension of cutting steel wire is
19N, the feed speed of crystal bar are 300~700um/min, and the granularity of silicon carbide micro-powder is #1500, the viscosity of mortar is 1.9~
2.1dPa.s, the density of mortar are 1.63~1.64g/cm3, the temperature of mortar is 24 DEG C.
This patent is effectively controlled the warpage fraction defective of silicon wafer after cutting by the synergistic effect of parameters
0.10% or so.
When cutting, crystal bar is mounted in biopsy chamber, and biopsy chamber is equipped with a mortar import, the mortar import and a mortar
The outlet of filter is connected, and the import of the mortar filter is connected with the outlet of a delivery pump.
Convenient for realizing the filtering to mortar by mortar filter, guarantee cutting effect.The mortar of any import slices room,
It is filtered by mortar, realizes filtering out for bulky grain (being greater than 30um), avoid bulky grain and cause to break, influence silicon wafer planar
State, the problem of causing yield.In addition, the problem of solving because of mortar purity, be easy to causeing warpage, stria.
The outlet of the delivery pump is connected with the discharge port of a mortar storage tank；
The biopsy chamber is equipped with a mortar outlet, and mortar outlet is connected with the import of mortar recycling filter device, mortar
The outlet of recycling filter device is connected with the delivery pump.
It is easy to implement the filter effect of recycling mortar, guarantees cutting effect.
The mortar filter includes a tank body, offers feed inlet above the tank body, opens below the tank body
Equipped with discharge port；
The mortar filter further includes the filter mechanism being arranged between feed inlet and the discharge port, the filter
Structure includes a nylon leaching net and is arranged in nylon leaching net peripheral metal strainer；
The mortar filter further includes an installing mechanism, the installing mechanism include circular support plate, spring and
One compression bar, the support plate it is peripheral between the inner wall of the tank body be equipped with a sealing structure, the lower section of the support plate with
The filter mechanism is connected, and the center of the annular shape support plate is connected with the lower end of spring, and the upper end of the spring is connected with
One compression bar, the opposite side of the inner wall of the tank body are equipped with one for being inserted into the plug connector at compression bar both ends, open up on the plug connector
There is the socket to match with the compression bar end.
This patent can effectively prevent between mortar by support plate from support by the structure of optimization mortar filter
Gap between plate and the inner wall of tank body is from outflow, the problem of influencing filter effect.
By optimizing the structure of installing mechanism, it is easy to implement the fixed effect to filter mechanism.The installation of filter mechanism walks
It is rapid then by pressing spring under compression bar, and the both ends of compression bar to be inserted on plug connector for filter mechanism is put into tank body first,
It realizes the fixation of compression bar, and then realizes the fixation of filter mechanism.Rotation compression bar is first passed through headed by the removal step of filter mechanism, into
And realize that compression bar is detached from from plug connector, then filter mechanism is pulled out from tank body.
The delivery pump is a centrifugal pump.
The side wall of the tank body is arranged in the feed inlet；
The top of the feed inlet is lower than the top of the spring.
Reduce the probability that spring touches mortar.
The sealing structure is a sealing ring.
The inner wall of the tank body is additionally provided with the position-limit mechanism that a limitation filter mechanism moves down.Convenient for guaranteeing that filtering is please limiting
Under the action of mechanism and installing mechanism, in the intracorporal limit fixed effect of tank.
Detailed description of the invention
Fig. 1 is the mortar changes in flow rate figure under the different depths of cut of the present invention；
Fig. 2 is a kind of structural schematic diagram of mortar filter of the invention；
Fig. 3 is the cross-sectional view of mortar filter of the invention；
Fig. 4 is mortar filter-portion top view of the invention.
In figure: 1 is mortar filter, and 11 be feed inlet, and 12 be discharge port, and 13 be metal screen, and 14 be nylon leaching net, 15
It is spring for position-limit mechanism, 16,17 plug connectors, 18 be compression bar, and 19 be support plate, and 20 be connecting plate.
Specific embodiment
Following further describes the present invention with reference to the drawings.
Referring to Fig. 1, a kind of cutting method improving silicon chip edge warpage is mortar at the position 0mm-8mm in depth of cut
Flow remain steady state, and the flow of mortar is 70L/min；
When depth of cut is at the position 8mm-18mm, the flow of mortar linearly successively decreases, and the flow of mortar is that (2* is cut
Cut depth value+52) L/min；
When depth of cut is at the position 18mm-98mm, the flow of mortar is 80L/min；
When depth of cut is at the position 98mm, the flow of mortar is 80L/min；It is 98mm to 100mm in depth of cut
When, mortar flow is gradually decremented to 79.5L/min from 80L/min；
When depth of cut is at the position 100mm, the flow of mortar is 79.5L/min；Depth of cut be 100mm extremely
When 102mm, mortar flow is gradually decremented to 78.5L/min from 79.5L/min；
When depth of cut is at the position 102mm, the flow of mortar is 78.5L/min；Depth of cut be 102mm extremely
When 104mm, mortar flow is gradually decremented to 77L/min from 78.5L/min；
When depth of cut is at the position 104mm, the flow of mortar is 77L/min；Depth of cut be 104mm extremely
When 106mm, mortar flow is gradually decremented to 75L/min from 77L/min；
When depth of cut is at the position 106mm, the flow of mortar is 75L/min；Depth of cut be 106mm extremely
When 108mm, mortar flow is gradually decremented to 73L/min from 75L/min；
When depth of cut is at the position 108mm, the flow of mortar is 73L/min；Depth of cut be 108mm extremely
When 110mm, mortar flow is gradually decremented to 71L/min from 73L/min；
When depth of cut is at the position 110mm, the flow of mortar is 71L/min；Depth of cut be 110mm extremely
When 112mm, mortar flow is gradually decremented to 69L/min from 71L/min；
When depth of cut is at the position 112mm, the flow of mortar is 69L/min；Depth of cut be 112mm extremely
When 114mm, mortar flow is gradually decremented to 67L/min from 69L/min；
When depth of cut is at the position 114mm, the flow of mortar is 67L/min；Depth of cut be 114mm extremely
When 116mm, mortar flow is gradually decremented to 65L/min from 67L/min；
When depth of cut is at the position 116mm, the flow of mortar is 65L/min；Depth of cut be 116mm extremely
When 118mm, mortar flow is gradually decremented to 63L/min from 65L/min；
When depth of cut is at the position 118mm, the flow of mortar is 63L/min；Depth of cut be 118mm extremely
When 120mm, mortar flow is gradually decremented to 61.5L/min from 63L/min；
When depth of cut is at the position 120mm, the flow of mortar is 61.5L/min；Depth of cut be 120mm extremely
When 122mm, mortar flow is gradually decremented to 61L/min from 61.5L/min；
When depth of cut is at the position 122mm-A, mortar flow is 61L/min, and A is the maximum outside diameter value of crystal bar, A=
130mm±2mm。
The edge warping rate for the silicon wafer being cut into using above-mentioned data is significantly improved.After above-mentioned mortar flow, stick up
Bent fraction defective is reduced to 0.10% or so from traditional 0.18%.In the case where remaining parameter constant, under above-mentioned parameter
The cutting effect of silicon wafer is most beneficial.
Crystal bar is cut using cutting steel wire, the speed of cutting steel wire is 600m/min, and the tension of cutting steel wire is
19N, the feed speed of crystal bar are 300~700um/min, and the granularity of silicon carbide micro-powder is #1500, the viscosity of mortar is 1.9~
2.1dPa.s, the density of mortar are 1.63~1.64g/cm3, the temperature of mortar is 24 DEG C.
This patent is effectively controlled the warpage fraction defective of silicon wafer after cutting by the synergistic effect of parameters
0.10% or so.
When cutting, crystal bar is mounted in biopsy chamber, and biopsy chamber is equipped with a mortar import, and mortar import and a mortar filter
The outlet of device 1 is connected, and the import of mortar filter 1 is connected with the outlet of a delivery pump.Convenient for passing through the realization pair of mortar filter 1
The filtering of mortar guarantees cutting effect.The mortar of any import slices room filters by mortar, realizes bulky grain and (be greater than
Filtering out 30um), avoids the problem of bulky grain causes to break, influences silicon wafer surface state, cause yield.In addition, solve because
For mortar purity, the problem of be easy to causeing warpage, stria.
The outlet of delivery pump is connected with the discharge port 12 of a mortar storage tank；Biopsy chamber is equipped with a mortar outlet, and mortar goes out
Mouth is connected with the import of mortar recycling filter device, and the outlet of mortar recycling filter device is connected with delivery pump.
It is easy to implement the filter effect of recycling mortar, guarantees cutting effect.
Referring to fig. 2, Fig. 3 and Fig. 4, mortar filter 1 include a tank body, offer feed inlet 11, tank above tank body
Discharge port 12 is offered below body；Mortar filter 1 further includes the filter being arranged between feed inlet 11 and discharge port 12
Structure, filter mechanism include a nylon leaching net 14 and are arranged in 14 peripheral metal strainer 13 of nylon leaching net；Mortar filter 1 also wraps
An installing mechanism is included, installing mechanism includes circular support plate 19, spring 16 and a compression bar 18, the periphery of support plate 19 and tank
A sealing structure is equipped between the inner wall of body, the lower section of support plate 19 is connected with filter mechanism, the center of support plate 19 and spring
16 lower end is connected, and the upper end of spring 16 is connected with a compression bar 18, and the opposite side of the inner wall of tank body is equipped with one for being inserted into compression bar
The plug connector 17 at 18 both ends offers the socket to match with 18 end of compression bar on plug connector 17.This patent passes through optimization mortar
The structure of filter 1 can effectively prevent between mortar by support plate 19 between support plate 19 and the inner wall of tank body
Gap is from outflow, the problem of influencing filter effect.By optimizing the structure of installing mechanism, it is easy to implement the fixation to filter mechanism
Effect.A connecting rod is welded in support plate 19, connecting plate 20 is connected with spring 16.The installation steps of filter mechanism are first will
Filter mechanism is put into tank body, then by pressing spring under compression bar, and the both ends of compression bar is inserted on plug connector, is realized compression bar
It is fixed, and then realize the fixation of filter mechanism.Rotation compression bar is first passed through headed by the removal step of filter mechanism, and then realizes compression bar
It is detached from from plug connector, then pulls out filter mechanism from tank body.The lower ending opening of socket.It is inserted from bottom to up convenient for compression bar
Enter.
Tank body upper end opening, the upper end of tank body are covered with a top cover, and one is equipped on top cover for detecting in filter chamber
The pressure test device of air pressure.Convenient for know the problem of whether to have occur nylon leaching net block caused by internal pressure it is excessively high, convenient for pair
The detection of the working condition of device entirety.An air inlet is also provided on top cover, air inlet is equipped with a valve.Convenient for by into
Port imports gas, and then realizes internal increase, improves the water conservancy diversion speed of mortar.
Nylon leaching net is the bag shaped structure of upper end opening, and the open end of nylon leaching net is fixed with an elastic circle body, support plate
Inside be equipped with flange for being inserted in elastic circle body；Metal screen is the metal cover body of upper end opening, is opened up in metal cover body
There is mesh, upper end and the support plate of metal cover body are weldingly connected.It is easy to implement the replacement of nylon leaching net, in addition, passing through metal cap
Body is easy to implement the support protection to nylon leaching net.
Delivery pump is a centrifugal pump.
The side wall of tank body is arranged in feed inlet 11；The top of feed inlet 11 is lower than the top of spring 16.Spring 16 is reduced to connect
Contact the probability of mortar.
Sealing structure is a sealing ring.
The inner wall of tank body is additionally provided with the position-limit mechanism 15 that a limitation filter mechanism moves down.Convenient for guaranteeing filtering please in position restrainer
Under the action of structure 15 and installing mechanism, in the intracorporal limit fixed effect of tank.
The above is only the preferred embodiment of the present invention, it is noted that those skilled in the art are come
It says, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of cutting method for improving silicon chip edge warpage, which is characterized in that at depth of cut is the position 0mm-8mm, sand
The flow of slurry remains steady state, and the flow of mortar is 68L/min-70L/min；
When depth of cut is at the position 8mm-18mm, the flow of mortar linearly successively decreases, and the flow of mortar is that (2* cutting is deep
Angle value+52) L/min；
When depth of cut is at the position 18mm-98mm, the flow of mortar is 80L/min；
When depth of cut is at the position 98mm-122mm, the flow of mortar is successively gradually decremented to 61L/min from 80L/min；
When depth of cut is at the position 122mm-A, mortar flow is 61L/min, and A is the maximum outside diameter value of crystal bar, A=
130mm±2mm。
2. a kind of cutting method for improving silicon chip edge warpage according to claim 1, it is characterised in that: in depth of cut
At the position 0mm-8mm, the flow of mortar is 70L/min；
When depth of cut is at the position 98mm, the flow of mortar is 80L/min；
When depth of cut is at the position 100mm, the flow of mortar is 79.5L/min；
When depth of cut is at the position 102mm, the flow of mortar is 78.5L/min；
When depth of cut is at the position 104mm, the flow of mortar is 77L/min；
When depth of cut is at the position 106mm, the flow of mortar is 75L/min；
When depth of cut is at the position 108mm, the flow of mortar is 73L/min；
When depth of cut is at the position 110mm, the flow of mortar is 71L/min；
When depth of cut is at the position 112mm, the flow of mortar is 69L/min；
When depth of cut is at the position 114mm, the flow of mortar is 67L/min；
When depth of cut is at the position 116mm, the flow of mortar is 65L/min；
When depth of cut is at the position 118mm, the flow of mortar is 63L/min；
When depth of cut is at the position 120mm, the flow of mortar is 61.5L/min.
3. a kind of cutting method for improving silicon chip edge warpage according to claim 2, it is characterised in that: use cutting of steel
Line cuts crystal bar, and the speed of cutting steel wire is 600m/min, and the tension of cutting steel wire is 19N, the feed speed of crystal bar
For 300~700um/min, the granularity of silicon carbide micro-powder is #1500, and the viscosity of mortar is 1.9~2.1dPa.s, the density of mortar
For 1.63~1.64g/cm3, the temperature of mortar is 24 DEG C.
4. a kind of cutting method for improving silicon chip edge warpage according to claim 3, it is characterised in that: brilliant when cutting
Stick is mounted in biopsy chamber, and biopsy chamber is equipped with a mortar import, and the mortar import is connected with the outlet of a mortar filter,
The import of the mortar filter is connected with the outlet of a delivery pump.
5. a kind of cutting method for improving silicon chip edge warpage according to claim 4, it is characterised in that: the delivery pump
Outlet be connected with the discharge port of a mortar storage tank；
The biopsy chamber is equipped with a mortar outlet, and mortar outlet is connected with the import of mortar recycling filter device, mortar recycling
The outlet of filter device is connected with the delivery pump.
6. a kind of cutting method for improving silicon chip edge warpage according to claim 1, it is characterised in that: the mortar mistake
Filter includes a tank body, offers feed inlet above the tank body, offers discharge port below the tank body；
The mortar filter further includes the filter mechanism being arranged between feed inlet and the discharge port, the filter mechanism packet
It includes a nylon leaching net and is arranged in nylon leaching net peripheral metal strainer；
The mortar filter further includes an installing mechanism, and the installing mechanism includes circular support plate, spring and a pressure
Bar, the support plate it is peripheral between the inner wall of the tank body be equipped with a sealing structure, the lower section of the support plate with it is described
Filter mechanism is connected, and the center of the support plate is connected with the lower end of spring, and the upper end of the spring is connected with a compression bar, described
The opposite side of the inner wall of tank body is equipped with one for being inserted into the plug connector at compression bar both ends, offers and the compression bar on the plug connector
The socket that end matches.
7. a kind of cutting method for improving silicon chip edge warpage according to claim 6, it is characterised in that: the delivery pump
It is a centrifugal pump.
8. a kind of cutting method for improving silicon chip edge warpage according to claim 6, it is characterised in that: the feed inlet
The side wall of the tank body is set；
The top of the feed inlet is lower than the top of the spring.
9. a kind of cutting method for improving silicon chip edge warpage according to claim 6, it is characterised in that: the sealing knot
Structure is a sealing ring.
10. a kind of cutting method for improving silicon chip edge warpage according to claim 6, it is characterised in that: the tank body
Inner wall be additionally provided with the position-limit mechanism that a limitation filter mechanism moves down.
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| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
| CN112092225A (en) * | 2020-09-22 | 2020-12-18 | 上海新昇半导体科技有限公司 | Crystal bar baffle and crystal bar cutting method |
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| CN108162213A (en) * | 2017-12-07 | 2018-06-15 | 上海申和热磁电子有限公司 | A kind of method for reducing silicon warp when Multi-wire wafer is cut |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
| CN112092225A (en) * | 2020-09-22 | 2020-12-18 | 上海新昇半导体科技有限公司 | Crystal bar baffle and crystal bar cutting method |
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| CN109227975B (en) | 2020-11-13 |
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Effective date of registration: 20191226 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Applicant after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. Applicant before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee after: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. Patentee before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
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