CN109227975B - Cutting method for improving warping of silicon wafer edge - Google Patents
Cutting method for improving warping of silicon wafer edge Download PDFInfo
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- CN109227975B CN109227975B CN201811104224.1A CN201811104224A CN109227975B CN 109227975 B CN109227975 B CN 109227975B CN 201811104224 A CN201811104224 A CN 201811104224A CN 109227975 B CN109227975 B CN 109227975B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
Abstract
The invention relates to the technical field of semiconductor processing. A cutting method for improving the edge warpage of a silicon wafer is characterized in that the cutting depth is 0-8 mm, and the flow rate of mortar is 70L/min; when the cutting depth is 8mm-18mm, the flow rate of the mortar is increased in a linear mode, and the flow rate of the mortar is (cutting depth value +62) L/min; when the cutting depth is 18mm-98mm, the flow rate of the mortar is 80L/min; when the cutting depth is 98mm-122mm, the flow rate of the mortar is gradually decreased from 80L/min to 61L/min; when the cutting depth is 122mm-A, the flow rate of the mortar is 61L/min, A is the maximum outer diameter value of the crystal bar, and A is 130mm +/-2 mm. The problem of silicon chip edge warpage is obviously improved through optimizing the mortar flow when the cutting depth is different.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a silicon wafer cutting method.
Background
The multi-wire cutting technology for silicon wafers is an advanced silicon wafer processing technology in the world at present, and the basic principle of the multi-wire cutting technology is that cutting mortar attached to a steel wire is driven by the steel wire moving at a high speed to rub a silicon rod, so that the effect of cutting a crystal bar is achieved.
The warpage is one of the biggest influences on the overall yield. The positions with large warping are mainly concentrated on the positions of the silicon wafer in-edge and out-edge by the confirmation of the previous data. How to improve the warping of the silicon wafer in-cut and out-cut positions is one of the problems which need to be overcome urgently in the cutting process at present. The steel wire is difficult to accurately position when just contacting the crystal bar, so the warping of the crystal bar just cut into is generally large, the increase of the flow can cause line marks, and the flow is too small to ensure normal cutting. In the end stage of crystal bar processing, impurities such as silicon chips cut from mortar affect the cutting level of the mortar, the cutting capability is reduced due to the existence of the resin plate, and the crack is caused by increasing the flow rate at the edge of the knife, so that the edge warping caused by the edge of the knife is always a difficult problem in the industry.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a cutting method for improving the edge warping of a silicon wafer, so as to solve at least one technical problem.
The technical scheme of the invention is as follows: a cutting method for improving the edge warpage of a silicon wafer is characterized in that the flow rate of mortar is always kept constant at the position of a cutting depth of 0mm-8mm, and the flow rate of the mortar is 70L/min;
when the cutting depth is 8mm-18mm, the flow rate of the mortar is linearly increased, and the flow rate of the mortar is (cutting depth value +62) L/min;
when the cutting depth is 18mm-98mm, the flow rate of the mortar is 80L/min;
when the cutting depth is 98mm-122mm, the flow rate of the mortar is gradually decreased from 80L/min to 61L/min;
when the cutting depth is 122mm-A, the flow rate of the mortar is 61L/min, A is the maximum outer diameter value of the crystal bar, and A is 130mm +/-2 mm.
This patent is to when the external diameter is 130mm 2 mm's crystal bar cutting, through optimizing the mortar flow when the cutting depth of difference, obviously improves the warping problem in silicon chip edge.
More preferably, the flow rate of the mortar is 70L/min at the position of the cutting depth of 0mm-8 mm;
when the cutting depth is 98mm, the flow rate of the mortar is 80L/min;
when the cutting depth is 100mm, the flow rate of the mortar is 79.5L/min;
when the cutting depth is 102mm, the flow rate of the mortar is 78.5L/min;
when the cutting depth is 104mm, the flow rate of the mortar is 77L/min;
when the cutting depth is 106mm, the flow rate of the mortar is 75L/min;
when the cutting depth is 108mm, the flow rate of the mortar is 73L/min;
when the cutting depth is 110mm, the flow rate of the mortar is 71L/min;
when the cutting depth is 112mm, the flow rate of the mortar is 69L/min;
when the cutting depth is 114mm, the flow rate of the mortar is 67L/min;
when the cutting depth is 116mm, the flow rate of the mortar is 65L/min;
when the cutting depth is 118mm, the flow rate of the mortar is 63L/min;
at a position of 120mm in depth of cut, the flow rate of the mortar was 61.5L/min.
The edge warping rate of the silicon slice cut by the data is obviously improved. After the mortar flow is adopted, the reject ratio of warping is reduced from the traditional 0.18% to about 0.10%. And under the condition that the other parameters are constant, the cutting effect of the silicon wafer under the parameters is most beneficial.
Cutting a crystal bar by using a cutting steel wire at a speed of 600m/min and a tension of 19N, wherein the feeding speed of the crystal bar is 300-700 um/min, the granularity of silicon carbide micro powder is #1500, the viscosity of mortar is 1.9-2.1 dPa.s, and the density of the mortar is 1.63-1.64 g/cm3The temperature of the mortar was 24 ℃.
The warpage defective rate of the cut silicon wafer is effectively controlled to be about 0.10% through the synergistic effect of all parameters.
During cutting, the crystal bar is installed in the slicing chamber, the slicing chamber is provided with a mortar inlet, the mortar inlet is connected with an outlet of a mortar filter, and the inlet of the mortar filter is communicated with an outlet of a delivery pump.
The mortar is conveniently filtered through the mortar filter, and the cutting effect is ensured. Any mortar led into the slicing chamber is filtered by the mortar, so that large particles (larger than 30um) are filtered, and the problems that the large particles cause wire breakage, influence on the surface state of a silicon wafer and cause yield are avoided. In addition, the problems of easy warping and line marks caused by the purity of the mortar are solved.
The outlet of the delivery pump is communicated with the discharge hole of a mortar storage tank;
the slicing chamber is provided with a mortar outlet, the mortar outlet is communicated with an inlet of a mortar recovery and filtration device, and an outlet of the mortar recovery and filtration device is communicated with the conveying pump.
The filtering effect of recycling mortar is convenient to realize, and the cutting effect is guaranteed.
The mortar filter comprises a tank body, a feed inlet is formed in the upper part of the tank body, and a discharge outlet is formed in the lower part of the tank body;
the mortar filter also comprises a filtering mechanism arranged between the feeding hole and the discharging hole, and the filtering mechanism comprises a nylon filter screen and a metal filter screen arranged on the periphery of the nylon filter screen;
the mortar filter still includes an installation mechanism, installation mechanism includes ring form backup pad, spring and a depression bar, the periphery of backup pad with be equipped with a seal structure between the inner wall of the jar body, the below of backup pad with filtering mechanism links to each other, the central authorities of ring form backup pad link to each other with the lower extreme of spring, the upper end of spring is connected with a depression bar, the opposite side of the inner wall of the jar body is equipped with a plug connector that is used for inserting the depression bar both ends, seted up on the plug connector with depression bar tip assorted socket.
This patent is through optimizing the structure of mortar filter, can effectually prevent from flowing out from the clearance between the inner wall of backup pad and the jar body between the mortar through the backup pad, influences the problem of filter effect.
Through optimizing the structure of installation mechanism, be convenient for realize the fixed effect to filtering mechanism. The installation steps of the filtering mechanism include that the filtering mechanism is firstly placed into the tank body, then the spring is pressed downwards through the pressure rod, and the two ends of the pressure rod are inserted into the plug connectors, so that the fixing of the pressure rod is realized, and the fixing of the filtering mechanism is further realized. The step of dismantling the filtering mechanism is to rotate the pressure lever to further separate the pressure lever from the plug connector and then pull the filtering mechanism out of the tank body.
The transfer pump is a centrifugal pump.
The feed inlet is arranged on the side wall of the tank body;
the top of the feed inlet is lower than the top of the spring.
The probability that the spring is contacted with mortar is reduced.
The sealing structure is a sealing ring.
The inner wall of the tank body is also provided with a limiting mechanism for limiting the filtering mechanism to move downwards. The filtering device is convenient to ensure the limiting and fixing effect in the tank body under the action of the limiting mechanism and the mounting mechanism.
Drawings
FIG. 1 is a diagram showing the flow rate of mortar at different cutting depths according to the present invention;
FIG. 2 is a schematic view of a mortar filter according to the present invention;
FIG. 3 is a cross-sectional view of a mortar filter of the invention;
FIG. 4 is a partial top view of a mortar filter according to the invention.
In the figure: the mortar filter comprises a mortar filter 1, a feed inlet 11, a discharge outlet 12, a metal filter screen 13, a nylon filter screen 14, a limiting mechanism 15, a spring 16, a plug connector 17, a press rod 18, a support plate 19 and a connecting plate 20.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, in a cutting method for improving the edge warpage of a silicon wafer, at a position with a cutting depth of 0mm-8mm, the flow rate of mortar is always kept constant, and the flow rate of mortar is 70L/min;
when the cutting depth is 8mm-18mm, the flow rate of the mortar is increased in a linear mode, and the flow rate of the mortar is (cutting depth value +62) L/min;
when the cutting depth is 18mm-98mm, the flow rate of the mortar is 80L/min;
when the cutting depth is 98mm, the flow rate of the mortar is 80L/min; when the cutting depth is 98mm to 100mm, the flow rate of the mortar is gradually reduced from 80L/min to 79.5L/min;
when the cutting depth is 100mm, the flow rate of the mortar is 79.5L/min; when the cutting depth is 100mm to 102mm, the flow rate of the mortar is gradually reduced from 79.5L/min to 78.5L/min;
when the cutting depth is 102mm, the flow rate of the mortar is 78.5L/min; when the cutting depth is 102mm to 104mm, the flow rate of the mortar is gradually reduced from 78.5L/min to 77L/min;
when the cutting depth is 104mm, the flow rate of the mortar is 77L/min; when the cutting depth is 104mm to 106mm, the flow rate of the mortar is gradually reduced from 77L/min to 75L/min;
when the cutting depth is 106mm, the flow rate of the mortar is 75L/min; when the cutting depth is 106mm to 108mm, the flow rate of the mortar is gradually reduced from 75L/min to 73L/min;
when the cutting depth is 108mm, the flow rate of the mortar is 73L/min; when the cutting depth is 108mm to 110mm, the flow rate of the mortar is gradually reduced from 73L/min to 71L/min;
when the cutting depth is 110mm, the flow rate of the mortar is 71L/min; when the cutting depth is 110mm to 112mm, the flow rate of the mortar is gradually reduced from 71L/min to 69L/min;
when the cutting depth is 112mm, the flow rate of the mortar is 69L/min; when the cutting depth is 112mm to 114mm, the flow rate of the mortar is gradually reduced from 69L/min to 67L/min;
when the cutting depth is 114mm, the flow rate of the mortar is 67L/min; when the cutting depth is 114mm to 116mm, the flow rate of the mortar is gradually reduced from 67L/min to 65L/min;
when the cutting depth is 116mm, the flow rate of the mortar is 65L/min; when the cutting depth is 116mm to 118mm, the flow rate of the mortar is gradually reduced from 65L/min to 63L/min;
when the cutting depth is 118mm, the flow rate of the mortar is 63L/min; when the cutting depth is 118mm to 120mm, the flow rate of the mortar is gradually reduced from 63L/min to 61.5L/min;
when the cutting depth is 120mm, the flow rate of the mortar is 61.5L/min; when the cutting depth is 120mm to 122mm, the flow rate of the mortar is gradually reduced from 61.5L/min to 61L/min;
when the cutting depth is 122mm-A, the flow rate of the mortar is 61L/min, A is the maximum outer diameter value of the crystal bar, and A is 130mm +/-2 mm.
The edge warping rate of the silicon slice cut by the data is obviously improved. After the mortar flow is adopted, the reject ratio of warping is reduced from the traditional 0.18% to about 0.10%. And under the condition that the other parameters are constant, the cutting effect of the silicon wafer under the parameters is most beneficial.
Cutting a crystal bar by using a cutting steel wire at a speed of 600m/min and a tension of 19N, wherein the feeding speed of the crystal bar is 300-700 um/min, the granularity of silicon carbide micro powder is #1500, the viscosity of mortar is 1.9-2.1 dPa.s, and the density of the mortar is 1.63-1.64 g/cm3The temperature of the mortar was 24 ℃.
The warpage defective rate of the cut silicon wafer is effectively controlled to be about 0.10% through the synergistic effect of all parameters.
During cutting, the crystal bar is installed in the slicing chamber, the slicing chamber is provided with a mortar inlet, the mortar inlet is connected with an outlet of a mortar filter 1, and the inlet of the mortar filter 1 is communicated with an outlet of a delivery pump. The mortar is conveniently filtered through the mortar filter 1, and the cutting effect is ensured. Any mortar led into the slicing chamber is filtered by the mortar, so that large particles (larger than 30um) are filtered, and the problems that the large particles cause wire breakage, influence on the surface state of a silicon wafer and cause yield are avoided. In addition, the problems of easy warping and line marks caused by the purity of the mortar are solved.
The outlet of the delivery pump is communicated with a discharge hole 12 of a mortar storage tank; the slicing chamber is provided with a mortar outlet, the mortar outlet is communicated with an inlet of a mortar recovery and filtration device, and an outlet of the mortar recovery and filtration device is communicated with the delivery pump.
The filtering effect of recycling mortar is convenient to realize, and the cutting effect is guaranteed.
Referring to fig. 2, 3 and 4, the mortar filter 1 comprises a tank body, a feed inlet 11 is arranged above the tank body, and a discharge outlet 12 is arranged below the tank body; the mortar filter 1 also comprises a filtering mechanism arranged between the feeding hole 11 and the discharging hole 12, and the filtering mechanism comprises a nylon filter screen 14 and a metal filter screen 13 arranged on the periphery of the nylon filter screen 14; the mortar filter 1 further comprises an installation mechanism, the installation mechanism comprises an annular supporting plate 19, a spring 16 and a pressure rod 18, a sealing structure is arranged between the periphery of the supporting plate 19 and the inner wall of the tank body, the lower portion of the supporting plate 19 is connected with the filtering mechanism, the center of the supporting plate 19 is connected with the lower end of the spring 16, the upper end of the spring 16 is connected with the pressure rod 18, plug connectors 17 used for being inserted into two ends of the pressure rod 18 are arranged on the opposite sides of the inner wall of the tank body, and sockets matched with the end portions of the pressure rod 18 are formed in. This patent is through optimizing the structure of mortar filter 1, can effectually prevent from flowing out from the clearance between the inner wall of backup pad 19 and the jar body between the mortar through backup pad 19, influences the problem of filter effect. Through optimizing the structure of installation mechanism, be convenient for realize the fixed effect to filtering mechanism. A connecting rod is welded on the supporting plate 19, and the connecting plate 20 is connected with the spring 16. The installation steps of the filtering mechanism include that the filtering mechanism is firstly placed into the tank body, then the spring is pressed downwards through the pressure rod, and the two ends of the pressure rod are inserted into the plug connectors, so that the fixing of the pressure rod is realized, and the fixing of the filtering mechanism is further realized. The step of dismantling the filtering mechanism is to rotate the pressure lever to further separate the pressure lever from the plug connector and then pull the filtering mechanism out of the tank body. The lower end of the socket is open. The pressing rod can be conveniently inserted from bottom to top.
The opening is gone up to the jar body, and the upper end of jar body covers there is a top cap, installs an atmospheric pressure detection device that is used for detecting the atmospheric pressure in the filter chamber on the top cap. Whether the problem that the internal pressure is too high caused by the blockage of the nylon filter screen is convenient to know, and the detection on the integral working state of the device is convenient. The top cover is also provided with an air inlet, and the air inlet is provided with a valve. The air is conveniently led in through the air inlet, so that the internal air pressure is increased, and the flow guiding speed of the mortar is improved.
The nylon filter screen is of a bag-shaped structure with an opening at the upper end, an elastic ring body is fixed at the opening end of the nylon filter screen, and a flanging for sleeving the elastic ring body is arranged on the inner side of the supporting plate; the metal filter screen is the metal cover body of upper end open-ended, has seted up the mesh on the metal cover body, and the upper end of the metal cover body links to each other with the backup pad welding. The change of nylon filter screen is convenient for realize, in addition, through the metal cover body, the realization of being convenient for is protected the support of nylon filter screen.
The transfer pump is a centrifugal pump.
The feed inlet 11 is arranged on the side wall of the tank body; the top of the feed port 11 is lower than the top of the spring 16. Reducing the probability of the spring 16 coming into contact with the mortar.
The sealing structure is a sealing ring.
The inner wall of the tank body is also provided with a limiting mechanism 15 which limits the filtering mechanism to move downwards. The filtering device is convenient to ensure the limiting and fixing effect in the tank body under the action of the limiting mechanism 15 and the mounting mechanism.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that it is obvious to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (8)
1. A cutting method for improving the edge warpage of a silicon wafer is characterized in that the flow rate of mortar is always kept constant at the position of a cutting depth of 0mm-8mm, and the flow rate of the mortar is 70L/min;
when the cutting depth is 8mm-18mm, the flow rate of the mortar is increased in a linear mode, and the flow rate of the mortar is (cutting depth value +62) L/min;
when the cutting depth is 18mm-98mm, the flow rate of the mortar is 80L/min;
when the cutting depth is 98mm-122mm, the flow rate of the mortar is gradually decreased from 80L/min to 61L/min;
when the cutting depth is 122mm-A, the flow rate of the mortar is 61L/min, A is the maximum outer diameter value of the crystal bar, and A is 130mm +/-2 mm;
during cutting, the crystal bar is arranged in the slicing chamber, the slicing chamber is provided with a mortar inlet, the mortar inlet is connected with an outlet of a mortar filter, and the inlet of the mortar filter is communicated with an outlet of a conveying pump;
the mortar filter comprises a tank body, a feed inlet is formed in the upper part of the tank body, and a discharge outlet is formed in the lower part of the tank body;
the mortar filter also comprises a filtering mechanism arranged between the feeding hole and the discharging hole, and the filtering mechanism comprises a nylon filter screen and a metal filter screen arranged on the periphery of the nylon filter screen;
the mortar filter also comprises an installation mechanism, the installation mechanism comprises an annular supporting plate, a spring and a pressure rod, a sealing structure is arranged between the periphery of the supporting plate and the inner wall of the tank body, the lower part of the supporting plate is connected with the filtering mechanism, the center of the supporting plate is connected with the lower end of the spring, the upper end of the spring is connected with the pressure rod, the opposite side of the inner wall of the tank body is provided with a plug connector for inserting the two ends of the pressure rod, and the plug connector is provided with a socket matched with the end part of the pressure rod;
the lower end of the socket is open;
the upper end of the tank body is provided with an opening, the upper end of the tank body is covered with a top cover, and the top cover is provided with an air pressure detection device for detecting air pressure in the filtering cavity;
the top cover is further provided with an air inlet, and the air inlet is provided with a valve.
2. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein:
when the cutting depth is 100mm, the flow rate of the mortar is 79.5L/min;
when the cutting depth is 102mm, the flow rate of the mortar is 78.5L/min;
when the cutting depth is 104mm, the flow rate of the mortar is 77L/min;
when the cutting depth is 106mm, the flow rate of the mortar is 75L/min;
when the cutting depth is 108mm, the flow rate of the mortar is 73L/min;
when the cutting depth is 110mm, the flow rate of the mortar is 71L/min;
when the cutting depth is 112mm, the flow rate of the mortar is 69L/min;
when the cutting depth is 114mm, the flow rate of the mortar is 67L/min;
when the cutting depth is 116mm, the flow rate of the mortar is 65L/min;
when the cutting depth is 118mm, the flow rate of the mortar is 63L/min;
at a position of 120mm in depth of cut, the flow rate of the mortar was 61.5L/min.
3. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: cutting a crystal bar by using a cutting steel wire at a speed of 600m/min and a tension of 19N, wherein the feeding speed of the crystal bar is 300-700 um/min, the granularity of silicon carbide micro powder is #1500, the viscosity of mortar is 1.9-2.1 dPa.s, and the density of the mortar is 1.63-1.64 g/cm3The temperature of the mortar was 24 ℃.
4. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: the outlet of the delivery pump is communicated with the discharge hole of a mortar storage tank;
the slicing chamber is provided with a mortar outlet, the mortar outlet is communicated with an inlet of a mortar recovery and filtration device, and an outlet of the mortar recovery and filtration device is communicated with the conveying pump.
5. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: the transfer pump is a centrifugal pump.
6. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: the feed inlet is arranged on the side wall of the tank body;
the top of the feed inlet is lower than the top of the spring.
7. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: the sealing structure is a sealing ring.
8. The cutting method for improving the edge warping of the silicon wafer as claimed in claim 1, wherein: the inner wall of the tank body is also provided with a limiting mechanism for limiting the filtering mechanism to move downwards.
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| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
| CN112092225B (en) * | 2020-09-22 | 2022-07-19 | 上海新昇半导体科技有限公司 | Crystal bar baffle and crystal bar cutting method |
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| CN109227975A (en) | 2019-01-18 |
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Effective date of registration: 20191226 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Applicant after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. Applicant before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee after: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. Patentee before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |
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Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Address before: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Patentee before: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Patentee before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. |