CN108162213A - A kind of method for reducing silicon warp when Multi-wire wafer is cut - Google Patents
A kind of method for reducing silicon warp when Multi-wire wafer is cut Download PDFInfo
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- CN108162213A CN108162213A CN201711285103.7A CN201711285103A CN108162213A CN 108162213 A CN108162213 A CN 108162213A CN 201711285103 A CN201711285103 A CN 201711285103A CN 108162213 A CN108162213 A CN 108162213A
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- Prior art keywords
- silicon
- cut
- cutting
- mortar
- steel wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
Abstract
The present invention provides a kind of method of silicon warp when reducing Multi-wire wafer cutting, silicon pole to be cut is installed on to the top of cutting steel wire, because semi-conductor silicon chip has the requirement in face orientation, the silicon pole enters knife face relative to the cutting steel wire inclined cut；The cutting steel wire cuts the silicon pole；Uninterrupted is adjusted in certain depth of cut, can be good at reducing silicon warp；The influence to extension engineering and the influence of lithographic line width uniformity are reduced, better meets requirement of the client to product warpage.
Description
Technical field
The present invention relates to field of semiconductor processing, and in particular to a kind of side for reducing silicon warp when Multi-wire wafer is cut
Method.
Background technology
Multi-wire wafer cutting technique is more advanced silicon chip process technology in the world at present, its basic principle is to pass through
The cutting mortar that the steel wire drive of a piece high-speed motion is attached on steel wire rubs to silicon rod, so as to reach the effect of cutting
Fruit.Wherein cutting mortar is mixed according to a certain percentage by polyethylene glycol and silicon carbide micro-powder.
The quality (such as thickness deviation, warpage) of silicon chip by the speed of steel wire, the tension of steel wire, workpiece feed speed, cut
Cut the influence of the viscosity of coolant, the shape of silicon carbide micro-powder and granularity, the viscosity of mortar and the flow of density and mortar.
In the processing of scene, because semiconductor has the requirement of face orientation (off-orientation) in cutting process；Face orientation
Crystal bar generally requires same cutting line as non-90 degree (about 85 ° of 90 ° of ∽) cutting, and mortar has with cutting line in cutting process
Inwardly side offset trend and under the influence of the dual factor of variation of silicon pole shape；More past inboard (such as Fig. 1), causes silicon
The variation of piece warpage is more apparent, there is apparent deterioration (such as Fig. 2) between about 350~430 pieces of piece number is cut.
Invention content
In view of the problems of the existing technology, the present invention provides a kind of side for reducing silicon warp when Multi-wire wafer is cut
Method adjusts uninterrupted in certain depth of cut, can be good at reducing silicon warp；Reduce influence to extension engineering and
The influence of lithographic line width uniformity better meets requirement of the client to product warpage.
The technical scheme is that：A kind of method for reducing silicon warp when Multi-wire wafer is cut, is as follows：
Silicon pole to be cut is installed on to the top of cutting steel wire, the silicon pole enters knife face relative to the cutting
Steel wire inclined cut,
The cutting steel wire cuts the silico briquette；Wherein：The speed of cutting steel wire is 10.5 ∽ 11m/s, is cut
The tension of steel wire is 17 ∽ 21N, and the feed speed of silicon pole is 0.3 ∽ 0.6mm/min, and the viscosity for cutting coolant is 48 ∽
60mpa.s, the granularity of silicon carbide micro-powder is #1500, and the viscosity of mortar is 180 ∽ 250mpa.s, and the density of mortar is 1.63 ∽
1.635g/cm3；
When depth of cut is less than A, the flow of mortar is 78 ∽ 82L/min, i.e. the first mortar flow；When depth of cut arrives
During up to A, the flow of mortar starts to reduce with the speed of 0.3 ∽ 0.5L/min, until reduce to the first mortar flow 65% to
75%；
The A is 0.7~0.85 times of brilliant diameter of the rod (diameter of the rod letter " D " expressions, similarly hereinafter).
Further, the size of the angle is 85 ° of 90 ° of ∽.
Further, the cutting steel wire cuts the silicon pole；Wherein：The speed of cutting steel wire is 10.8m/
S, the tension of cutting steel wire is 20N, and the feed speed of silicon pole is 0.5mm/min, and the viscosity for cutting coolant is 55mpa.s,
The granularity of silicon carbide micro-powder is #1500, and the viscosity of mortar is 220mpa.s, and the density of mortar is 1.633g/cm3。
Further, the A is 0.7~0.85 times of boule diameter (D).
Further, when depth of cut is less than A, the flow of mortar is 80L/min.
Further, when depth of cut reaches A, the flow of mortar starts to reduce with the speed of 0.4L/min.
The beneficial effects of the invention are as follows：A kind of method for reducing silicon warp when Multi-wire wafer is cut is provided, certain
Depth of cut adjusts uninterrupted, can be good at reducing influence of the silicon warp to extension engineering (before adjustment, when cutting piece number
When between about 350~430 pieces, the warpage of silicon chip significantly deteriorates, and can reach more than 20um；After adjustment, the warpage of silicon chip substantially can
Enough it is maintained within 10um), influence of the silicon warp to lithographic line width uniformity is reduced, better meets client to product warpage
Requirement.
Description of the drawings
Fig. 1 (a) is that schematic top plan view is placed in the position of cutting steel wire and silicon pole；
Fig. 1 (b) is that stereoscopic schematic diagram is placed in the position of cutting steel wire and silicon pole；
Fig. 2 is the trend chart between silicon warp variation tendency and cutting sequence before adjusting；
Fig. 3 is depth of cut schematic diagram；
Fig. 4 is the trend chart between depth of cut and mortar flow before and after adjusting；D in figure:Represent cutting pole
Diameter, represented with alphabetical D, represent the silicon pole of different-diameter.
Fig. 5 is the trend chart between silicon warp variation tendency and cutting sequence after adjusting.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
A kind of method for reducing silicon warp when Multi-wire wafer is cut, is as follows：
Silico briquette to be cut is installed on to the top of cutting steel wire, and make at least one piece of silico briquette enter knife face relative to
The cutting steel wire is obliquely installed has an acute angle to enter knife face and the cutting steel wire described in guarantee, and it is described enter knife face position
It is contacted first with the cutting steel wire in the crest line position in the cutting steel wire direction of travel downstream；
The cutting steel wire cuts the silico briquette；Wherein：The speed of cutting steel wire is 10.5 ∽ 11m/s, is cut
The tension of steel wire is 17 ∽ 21N, and the feed speed of silicon pole is 0.3 ∽ 0.6mm/min, and the viscosity for cutting coolant is 48 ∽
60mpa.s, the granularity of silicon carbide micro-powder is #1500, and the viscosity of mortar is 180 ∽ 250mpa.s, and the density of mortar is 1.63 ∽
1.635g/cm3。
As shown in Figure 3,4, when depth of cut is less than the flows of A mortars for 80L/min, the first mortar flow；When cutting is deep
Degree reach A mortars flow start to reduce with the speed of 0.3 ∽ 0.5L/min, until reduce to the first mortar flow 65% to
75%；
The A is 0.7~0.85 times of boule diameter (D).
The size of the angle is 85 ° of 90 ° of ∽.
Shown in Fig. 5, for the trend chart after adjustment between silicon warp variation tendency and cutting sequence.After adjustment, silicon
The warpage of piece can be maintained within 10um substantially, be can be good at reducing influence of the silicon warp to extension engineering, reduced silicon
Influence of the piece warpage to lithographic line width uniformity better meets requirement of the client to product warpage.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (6)
- A kind of 1. method for reducing silicon warp when Multi-wire wafer is cut, it is characterised in that：It is as follows：Silicon pole to be cut is installed on to the top of cutting steel wire, the silicon pole enters knife face relative to the cutting steel wire Inclined cut,The cutting steel wire cuts the silico briquette；Wherein：The speed of cutting steel wire be 10.5 ∽ 11m/s, cutting steel wire Tension for 17 ∽ 21N, the feed speed of silicon pole is 0.3 ∽ 0.6mm/min, and the viscosity for cutting coolant is 48 ∽ 60mpa.s, the granularity of silicon carbide micro-powder is #1500, and the viscosity of mortar is 180 ∽ 250mpa.s, and the density of mortar is 1.63 ∽ 1.635g/cm3；When depth of cut is less than A, the flow of mortar is 78 ∽ 82L/min, i.e. the first mortar flow；When depth of cut reaches A When, the flow of mortar starts to reduce with the speed of 0.3 ∽ 0.5L/min, until reduce to the first mortar flow 65% to 75%；The A is 0.7~0.85 times of brilliant diameter of the rod.
- 2. a kind of method for reducing silicon warp when Multi-wire wafer is cut according to claim 1, it is characterised in that：It is described The size of angle is 85 ° of 90 ° of ∽.
- 3. a kind of method for reducing silicon warp when Multi-wire wafer is cut according to claim 1, it is characterised in that：It is described Cutting steel wire cuts the silicon pole；Wherein：The speed of cutting steel wire is 10.8m/s, and the tension of cutting steel wire is 20N, the feed speed of silicon pole is 0.5mm/min, and the viscosity for cutting coolant is 55mpa.s, and the granularity of silicon carbide micro-powder is # 1500, the viscosity of mortar is 220mpa.s, and the density of mortar is 1.633g/cm3。
- 4. a kind of method for reducing silicon warp when Multi-wire wafer is cut according to claim 1, it is characterised in that：It is described A is 0.7~0.85 times of boule diameter.
- 5. a kind of method for reducing silicon warp when Multi-wire wafer is cut according to claim 1, it is characterised in that：When cutting When cutting depth less than A, the flow of mortar is 80L/min.
- 6. a kind of method for reducing silicon warp when Multi-wire wafer is cut according to claim 1, it is characterised in that：When cutting When cutting depth arrival A, the flow of mortar starts to reduce with the speed of 0.4L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711285103.7A CN108162213A (en) | 2017-12-07 | 2017-12-07 | A kind of method for reducing silicon warp when Multi-wire wafer is cut |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711285103.7A CN108162213A (en) | 2017-12-07 | 2017-12-07 | A kind of method for reducing silicon warp when Multi-wire wafer is cut |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108162213A true CN108162213A (en) | 2018-06-15 |
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| CN201711285103.7A Pending CN108162213A (en) | 2017-12-07 | 2017-12-07 | A kind of method for reducing silicon warp when Multi-wire wafer is cut |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109227975A (en) * | 2018-09-21 | 2019-01-18 | 上海申和热磁电子有限公司 | A kind of cutting method improving silicon chip edge warpage |
| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
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| US5937844A (en) * | 1996-03-26 | 1999-08-17 | Shin-Etsu Handotai Co., Ltd. | Method for slicing cylindrical workpieces by varying slurry conditions and wire feed rate during slicing |
| US6568384B1 (en) * | 1999-06-08 | 2003-05-27 | Sumitomo Metal Industries, Ltd. | Semiconductor material cutting and processing method |
| US6283111B1 (en) * | 1999-06-18 | 2001-09-04 | Sumitomo Metal Industries, Ltd. | Wire saw cutting method and apparatus therefor |
| US7919815B1 (en) * | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
| TW200734149A (en) * | 2006-01-26 | 2007-09-16 | Memc Electronic Materials | Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control |
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| CN109227975A (en) * | 2018-09-21 | 2019-01-18 | 上海申和热磁电子有限公司 | A kind of cutting method improving silicon chip edge warpage |
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| CN110587837A (en) * | 2019-09-04 | 2019-12-20 | 天津中环领先材料技术有限公司 | Large-size silicon wafer cutting process |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20191226 Address after: 200444 Building 1, No. 181, Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180615 |
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| RJ01 | Rejection of invention patent application after publication |