CN203527671U - Silicon ingot cutting device - Google Patents

Silicon ingot cutting device Download PDF

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Publication number
CN203527671U
CN203527671U CN201320671300.3U CN201320671300U CN203527671U CN 203527671 U CN203527671 U CN 203527671U CN 201320671300 U CN201320671300 U CN 201320671300U CN 203527671 U CN203527671 U CN 203527671U
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CN
China
Prior art keywords
cutting
silicon
steel wire
silicon ingot
slurry tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320671300.3U
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Chinese (zh)
Inventor
梁新龙
陈乐�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yingli Energy China Co Ltd
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Yingli Energy China Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yingli Energy China Co Ltd filed Critical Yingli Energy China Co Ltd
Priority to CN201320671300.3U priority Critical patent/CN203527671U/en
Application granted granted Critical
Publication of CN203527671U publication Critical patent/CN203527671U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a silicon ingot cutting device and relates to the technical field of solar silicon wafer cutting. The cutting device comprises a slurry nozzle, two guide wheels, a steel wire wound on the guide wheels and a slurry tank between the two guide wheels. Three rows of gas tube nozzles which are distributed uniformly in arrays are arranged at the bottom of the slurry tank, each of the three rows of gas tube nozzles is vertical to the steel wire, the gas tube nozzles are communicated with a gas source through gas source tubes, and the distance between the upper edge of the slurry tank and the steel wire is 3mm. According to the cutting device, after cutting, silicon ingots can be completely submerged in mortar, enough slurries are guaranteed to be participated in cutting, and accordingly, the silicon ingot cutting capacity can be effectively improved, the silicon ingot cutting quality and the silicon wafer yield are improved, and the silicon wafer cutting cost is reduced.

Description

A kind of silicon ingot cutter sweep
Technical field
The utility model relates to solar silicon wafers cutting technique field.
Background technology
Photovoltaic industry is an emerging green energy resource industry, and along with the attention of countries in the world to green energy resource, photovoltaic industry develops rapidly, and high-quality, low cost are the keys of enterprise development.Along with country continues to increase the support dynamics of regenerative resource, China's photovoltaic industry sails policy " fast traffic lane " into, and production capacity expands rapidly.For take the photovoltaic cell that silicon chip is substrate, silicon chip is the most expensive part in crystal silicon photovoltaic cell technology, so it is most important to the competitiveness of traditional energy for improving solar energy to reduce the manufacturing cost of this part.Silicon chip section is as the critical process of technique for processing silicon chip flow process, and its working (machining) efficiency and crudy are directly connected to the overall situation that whole silicon chip is produced.
The wire cutting machine reason of solar silicon wafers is exactly that machine guide wheel is at the middle drive steel wire that runs up, thereby mortar polyethylene glycol and silicon carbide micro-powder being mixed by steel wire is delivered to cutting area, in the running up of steel wire with the process that is pressed in workpiece on gauze and recurs the cutting that rubbed.In whole process, the quality of silicon chip and yield rate are played a major role be the viscosity of cutting liquid, the grain type of silicon carbide micro-powder and circularity, the viscosity of mortar, the speed of the flow of mortar, steel wire, the feed speed of the tension force of steel wire and workpiece etc.Multi-wire saw is to take steel wire as carrier, carry mortar cutting, because cutting silicon wafer is to take mortar as abrasive material, so cutting technique is when establishment, must guarantee the matching of linear speed and table feed speed, in cutting, not only to guarantee that steel wire has enough tension force but also wants gauze to have line bow, thereby realize the maximum friction coefficient of mortar, make steel wire moving linearly, but the existence due to line bow, when closing on cutting end, crystal bar both sides are higher near the gauze of guide wheel, the gauze of cutting crystal bar is lower, higher gauze cuts to epoxide-resin glue and glass at first, because temperature in cutting is higher, glue-line and glass tightly wrap up steel wire, carrying mortar on steel wire, peel off, can cause the mortar of cutting silicon wafer to reduce, cutting power declines, go out to reveal cast-cutting saw trace, when serious, there will be glue face to collapse limit.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of silicon ingot cutter sweep, when cutting finishes, cutting crystal bar can immerse in mortar, the mortar that guarantees q.s participates in cutting, can effectively improve silicon chip cutting power, improve the yield rate of silicon chip cut quality and silicon chip, reduce silicon chip cutting cost.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of silicon ingot cutter sweep, comprise slurry mouth, two guide wheels, be wrapped in steel wire and the slurry tank between two guide wheels on guide wheel, in the bottom of slurry tank, be provided with three row and be the uniform tracheae nozzle of array, every row tracheae nozzle is lay vertical with steel wire all, described tracheae nozzle is communicated with source of the gas by gas source pipe, and upper edge and the distance between steel wire of described slurry tank are 3 ㎜.
The length of described slurry tank be greater than two silicon ingots length and, its width be greater than two silicon ingot width and, the height of described slurry tank is greater than the height of silicon ingot.
It is uniform that described tracheae nozzle is 3 * 3 arrays.
The beneficial effect that adopts technique scheme to produce is: the utility model arranges tracheae nozzle in slurry tank bottom, by regulating the pressure of source of the gas, when the cutting-height of silicon ingot is 0-160mm, compressed air pressure is adjusted to 0.2-0.3MP, make compressed air only play a stirring action, prevent mortar deposition; After silicon ingot is cut to 160mm, compressed air pressure is adjusted to 0.5-0.7MP, slurry in slurry tank is dug, cut silicon ingot is submerged among slurry, ensures enough slurries and participate in cutting, make up slurry peel off the cutting power causing not enough and produce go out knife face kerf, can effectively improve the cutting power of silicon ingot, reduce kerf, improve the yield rate of silicon ingot cut quality and silicon chip, reduce silicon ingot cutting cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Mark in figure: 1-silicon ingot; 2-slurry mouth; 3-steel wire; 4-slurry tank; 5-tracheae nozzle; 6-guide wheel.
The specific embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 1, the utility model comprises slurry mouth 2, two guide wheels 6, be wrapped in steel wire 3 and the slurry tank between two guide wheels 64 on guide wheel 6, in the bottom of slurry tank 4, be provided with three row and be the uniform tracheae nozzle 5 of array, it is uniform that described tracheae nozzle 5 is 3 * 3 arrays, every row tracheae nozzle 5 is laying vertical with steel wire 3 all, described tracheae nozzle 5 is communicated with source of the gas by gas source pipe, upper edge and the distance between steel wire 3 of described slurry tank 4 are 3 ㎜, in the prior art, the silicon ingot 1 of cutting silicon wafer is generally 156 ㎜ * 156 ㎜, it is highly the polysilicon cube of 209 ㎜ left and right, when cutting-height is 0-160mm, the compressed air pressure adopting is 0.2-0.3MP, make compressed air only play a stirring action, prevent mortar deposition, after being cut to 160mm, strengthen compressed air pressure, air pressure is adjusted to 0.5-0.7MP, now slurry can roll, liquid level increases, monoblock silicon ingot 1 is immersed in slurry, so just can make up slurry peel off the cutting power that causes not enough and produce go out knife face kerf, in cutting, slurry flows in slurry tank 4, container slurry tank 4 is filled with to disposed slurry and overflow the mortar jar that flows into outside, so loop cutting.
Owing to needing in this device that two silicon ingots 1 are cut simultaneously, therefore the length of described slurry tank 4 be greater than two silicon ingots 1 length and, its width be greater than two silicon ingot 1 width and, can guarantee like this to hold side by side two silicon ingots 1 simultaneously, the height of described slurry tank 4 is greater than the height of silicon ingot 1, along with the cutting of silicon ingot 1 moves down, to guarantee that silicon ingot 1 can be immersed in slurry tank 4 completely, ensure enough slurries and participate in cutting, reach the cutting power that improves silicon ingot 1, reduce kerf, improve the object of cut quality.
This device is that the cutting silicon ingot 1 that is about to cutting end is immersed in slurry, provide the slurry of q.s to participate in cutting, guarantee that silicon chip goes out knife face smooth, therefore upper edge and the distance between steel wire 3 of setting slurry tank 4 are 3 ㎜, and the distance between steel wire 3 and slurry tank 4 is too large, and the slurry that can not be rolled floods, on silicon chip, can leave kerf, affect cut quality, the distance between steel wire 3 and slurry tank 4 is too little, and slurry can not fully overflow.

Claims (3)

1. a silicon ingot cutter sweep, comprise slurry mouth (2), two guide wheels (6), be wrapped in the steel wire (3) on guide wheel (6) and be positioned at the slurry tank (4) between two guide wheels (6), it is characterized in that: in the bottom of slurry tank (4), be provided with three row and be the uniform tracheae nozzle (5) of array, every row tracheae nozzle (5) all with the vertical laying of steel wire (3), described tracheae nozzle (5) is communicated with source of the gas by gas source pipe, and the distance between the upper edge of described slurry tank (4) and steel wire (3) is 3 ㎜.
2. a kind of silicon ingot cutter sweep according to claim 1, it is characterized in that: the length of described slurry tank (4) be greater than two silicon ingots (1) length and, its width be greater than two silicon ingots (1) width and, the height of described slurry tank (4) is greater than the height of silicon ingot (1).
3. a kind of silicon ingot cutter sweep according to claim 1, is characterized in that: it is uniform that described tracheae nozzle (5) is 3 * 3 arrays.
CN201320671300.3U 2013-10-29 2013-10-29 Silicon ingot cutting device Expired - Fee Related CN203527671U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320671300.3U CN203527671U (en) 2013-10-29 2013-10-29 Silicon ingot cutting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320671300.3U CN203527671U (en) 2013-10-29 2013-10-29 Silicon ingot cutting device

Publications (1)

Publication Number Publication Date
CN203527671U true CN203527671U (en) 2014-04-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201320671300.3U Expired - Fee Related CN203527671U (en) 2013-10-29 2013-10-29 Silicon ingot cutting device

Country Status (1)

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CN (1) CN203527671U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105252658A (en) * 2015-10-29 2016-01-20 浙江农林大学 Solar silicon wafer cutting method
CN112549331A (en) * 2019-09-10 2021-03-26 苏州阿特斯阳光电力科技有限公司 Square silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105252658A (en) * 2015-10-29 2016-01-20 浙江农林大学 Solar silicon wafer cutting method
CN105252658B (en) * 2015-10-29 2017-02-01 浙江农林大学 Solar silicon wafer cutting method
CN112549331A (en) * 2019-09-10 2021-03-26 苏州阿特斯阳光电力科技有限公司 Square silicon ingot and preparation method thereof, and silicon wafer and preparation method thereof
CN112549331B (en) * 2019-09-10 2024-03-15 苏州阿特斯阳光电力科技有限公司 Square silicon ingot and preparation method thereof, silicon wafer and preparation method thereof

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140409

Termination date: 20151029

EXPY Termination of patent right or utility model