CN201960674U - Multi-strand cutting steel wire with abrasive coating - Google Patents
Multi-strand cutting steel wire with abrasive coating Download PDFInfo
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- CN201960674U CN201960674U CN2010206439221U CN201020643922U CN201960674U CN 201960674 U CN201960674 U CN 201960674U CN 2010206439221 U CN2010206439221 U CN 2010206439221U CN 201020643922 U CN201020643922 U CN 201020643922U CN 201960674 U CN201960674 U CN 201960674U
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- steel wire
- cutting steel
- cutting
- abrasive coating
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Abstract
The utility model relates to a cutting steel wire in the photovoltaic or semiconductor field, in particular to a multi-strand cutting steel wire with an abrasive coating, which consists of more than two strands of cutting steel wires, wherein the two strands of cutting steel wires are mutually and spirally wound to form a rope-shaped structure, the outer surface of each cutting steel wire is provided with the abrasive coating, and material ingredients of the abrasive coating is SiC or diamond particles. Compared with the prior art, the cutting steel wire has the advantages that because the abrasives are fixed on the surfaces of the cutting steel wires, the cutting processing is directly carried out on silicon materials, the processing efficiency is more than several times of that of the traditional multi-line cutting of free abrasives, in addition, the pollution on environments is reduced, the tensile strength is also greatly improved, the wire breaking rate of the steel wire is reduced, and the service life of the steel wire is prolonged, so the cost of silicon wafer cutting is reduced, and the cost of photovoltaic power generation is reduced.
Description
[technical field]
The utility model relates to the cutting steel wire in photovoltaic or the semiconductor applications, specifically a kind of multiply cutting steel wire with abrasive coating.
[background technology]
The multi-thread cutting technique of silicon crystal is compared with other cutting techniques, has efficient height, production capacity height, precision advantages of higher.The domestic multi-thread cutting of silicon crystal at present all is to adopt the multi-thread cutting of free abrasive, promptly cut steel wire and carry the mortar high-speed motion, free abrasive in the mortar carries out abrasive type processing to silicon materials under the drive of pressure that cuts steel wire and speed, thereby realizes the silicon crystal cutting.Cutting steel wire itself does not participate in cutting in this process, because the real contact area of free abrasive in the mortar and silicon materials is less, therefore lower to the clearance of rapidoprint, process time is longer, and production efficiency is low.If the harder or difficult to machine material more of processing, the multi-thread line of cut of this free abrasive just is difficult to competent.Can address the above problem and abrasive material is anchored at the multi-thread line of cut that cuts Steel Wire Surface, but the cutting steel wire that uses at present mostly is to adopt single steel wire, has limited the tensile strength of steel wire greatly, and cutting efficiency.
[summary of the invention]
The purpose of this utility model is exactly will solve above-mentioned deficiency and a kind of multiply cutting steel wire with abrasive coating is provided, and has improved cutting efficiency greatly, has reduced wire broken rate, thereby has effectively reduced cost.
Design a kind of multiply cutting steel wire for achieving the above object with abrasive coating, form by the cutting steel wire more than at least two strands, be spirally wound on mutually together between the described per share cutting steel wire, form rope-like constructed, it is characterized in that: described cutting steel wire outer surface is provided with abrasive coating, and described abrasive coating material composition is SiC or diamond particles.
The cross section of described per share cutting steel wire is circular, and described sub-thread cutting steel wire cross-sectional diameter is 0.08-0.3mm.
The average grain diameter of described SiC or diamond particles is the 5-60 micron.
Described abrasive coating adopts plating mode or glue bonding mode to be fixed on the cutting steel wire outer surface.
The utility model is compared with prior art, novel structure, simple, because abrasive material is anchored on the cutting Steel Wire Surface, thereby directly silicon materials are carried out cutting processing, its working (machining) efficiency is more than the several times of the traditional multi-thread cutting of free abrasive, and has reduced the pollution to environment.In addition, owing to adopted multiply cutting steel wire, improve tensile strength greatly, reduced the wire broken rate of steel wire, prolonged the service life of steel wire, thereby reduced the cost of silicon chip cutting, reduced the cost of photovoltaic generation.And steel wire strand can the more abrasive material of set on the Steel Wire Surface owing to have the gap between steel wire, thereby has effectively accelerated the cutting speed of steel wire, has improved cutting efficiency, is worthy of popularization.
[description of drawings]
Fig. 1 is the cross-sectional view of three bursts of cuttings of the utility model steel wire;
Among the figure: 1, SiC or diamond particles, 2, abrasive coating, 3, the cutting steel wire.
[specific embodiment]
Further specify below below in conjunction with accompanying drawing the utility model being done:
As shown in drawings, be spirally wound on mutually together between the per share cutting steel wire of the utility model with the existing cutting steel wire of three strands (can also be two strands or multiply), form rope-like constructed, the cross section of per share cutting steel wire is circular, diameter is 0.08mm, 0.10mm, 0.12mm, 0.20mm or 0.3mm, then with this multiply cutting steel wire unwrapping wire, carry out surface clean, afterwards SiC or diamond particles are fixed on Steel Wire Surface by plating mode or glue bonding mode, form abrasive coating, the average grain diameter of SiC or diamond particles is 5 microns, 10 microns, 15 microns, 20 microns 30 microns, 50 microns or 60 microns, and then carry out surface clean, last take-up.During cutting, this had the guiding of the multiply cutting steel wire of abrasive coating by tens guide rollers, on the main line roller, form a bracing cable net, and silicon crystal to be processed is realized the feeding of workpiece by the decline of workbench, because abrasive material is anchored on the cutting Steel Wire Surface, so in process, fixed abrasive material on the cutting Steel Wire Surface is along with the high-speed motion of steel wire, directly obtain movement velocity and certain pressure, thereby directly silicon materials are carried out grinding, realize cutting.
The utility model cutting steel wire purposes not only is used for the cutting of photovoltaic field silicon crystal, also can be used for the cutting of crystal, crystal glass, jewel etc.
The utility model is not subjected to the restriction of above-mentioned embodiment; other any do not deviate from change, the modification done under spiritual essence of the present utility model and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within the protection domain of the present utility model.
Claims (4)
1. the multiply cutting steel wire with abrasive coating is made up of the cutting steel wire more than at least two strands, is spirally wound on mutually together between the described per share cutting steel wire, forms rope-like constructed, and it is characterized in that: described cutting steel wire outer surface is provided with abrasive coating.
2. a kind of multiply cutting steel wire with abrasive coating as claimed in claim 1 is characterized in that: the cross section of described per share cutting steel wire is for circular, and described sub-thread cutting steel wire cross-sectional diameter is 0.08-0.3mm.
3. a kind of multiply cutting steel wire with abrasive coating as claimed in claim 1 or 2, it is characterized in that: the average grain diameter of described SiC or diamond particles is the 5-60 micron.
4. a kind of multiply cutting steel wire with abrasive coating as claimed in claim 3, it is characterized in that: described abrasive coating adopts plating mode or glue bonding mode to be fixed on the cutting steel wire outer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206439221U CN201960674U (en) | 2010-12-06 | 2010-12-06 | Multi-strand cutting steel wire with abrasive coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206439221U CN201960674U (en) | 2010-12-06 | 2010-12-06 | Multi-strand cutting steel wire with abrasive coating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201960674U true CN201960674U (en) | 2011-09-07 |
Family
ID=44523203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206439221U Expired - Fee Related CN201960674U (en) | 2010-12-06 | 2010-12-06 | Multi-strand cutting steel wire with abrasive coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201960674U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103486973A (en) * | 2013-09-18 | 2014-01-01 | 镇江耐丝新型材料有限公司 | Diamond wire plating thickness measuring method |
| CN103707426A (en) * | 2013-12-30 | 2014-04-09 | 镇江市港南电子有限公司 | Silicon wafer cutting machine |
| CN103722626A (en) * | 2013-12-30 | 2014-04-16 | 镇江市港南电子有限公司 | Silicon wafer cutting steel wire |
| CN110202494A (en) * | 2019-06-11 | 2019-09-06 | 阳光硅谷电子科技有限公司 | A kind of diamond wire knotting method and replacing options |
| CN114953224A (en) * | 2022-04-27 | 2022-08-30 | 苏闽(张家港)新型金属材料科技有限公司 | Ultra-fine ultrahigh-strength and high-toughness cutting steel wire |
-
2010
- 2010-12-06 CN CN2010206439221U patent/CN201960674U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103486973A (en) * | 2013-09-18 | 2014-01-01 | 镇江耐丝新型材料有限公司 | Diamond wire plating thickness measuring method |
| CN103486973B (en) * | 2013-09-18 | 2016-03-30 | 镇江耐丝新型材料有限公司 | A kind of measuring method of diamond wire thickness of coating |
| CN103707426A (en) * | 2013-12-30 | 2014-04-09 | 镇江市港南电子有限公司 | Silicon wafer cutting machine |
| CN103722626A (en) * | 2013-12-30 | 2014-04-16 | 镇江市港南电子有限公司 | Silicon wafer cutting steel wire |
| CN103707426B (en) * | 2013-12-30 | 2016-04-13 | 福能科技江苏有限公司 | A kind of silicon chip cutter |
| CN103722626B (en) * | 2013-12-30 | 2016-04-13 | 福能科技江苏有限公司 | A kind of silicon chip cutting steel wire |
| CN110202494A (en) * | 2019-06-11 | 2019-09-06 | 阳光硅谷电子科技有限公司 | A kind of diamond wire knotting method and replacing options |
| CN114953224A (en) * | 2022-04-27 | 2022-08-30 | 苏闽(张家港)新型金属材料科技有限公司 | Ultra-fine ultrahigh-strength and high-toughness cutting steel wire |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110907 Termination date: 20141206 |
|
| EXPY | Termination of patent right or utility model |