CN112071952B - Manufacturing method of silicon wafer, battery piece and photovoltaic module - Google Patents
Manufacturing method of silicon wafer, battery piece and photovoltaic module Download PDFInfo
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- CN112071952B CN112071952B CN202010896362.9A CN202010896362A CN112071952B CN 112071952 B CN112071952 B CN 112071952B CN 202010896362 A CN202010896362 A CN 202010896362A CN 112071952 B CN112071952 B CN 112071952B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 182
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 182
- 239000010703 silicon Substances 0.000 title claims abstract description 182
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000005520 cutting process Methods 0.000 claims abstract description 52
- 235000012431 wafers Nutrition 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 20
- 230000001154 acute effect Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 11
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000005267 amalgamation Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009432 framing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of a silicon wafer, a battery piece and a photovoltaic module, and relates to the technical field of photovoltaics. The manufacturing method of the silicon wafer comprises the following steps: providing a round silicon rod; and cutting the round silicon rod along the quadrilateral preset cutting path to obtain the quadrilateral silicon rod. The quadrilateral predetermined cutting path comprises a first set of opposing corners and a second set of opposing corners, wherein the first set of opposing corners inscribes a cross-section of the circular silicon rod and the second set of opposing corners is located outside the cross-section of the circular silicon rod. And slicing the quadrilateral silicon rod to obtain a quadrilateral silicon wafer with two opposite cambered surface chamfers. The manufacturing method of the silicon wafer, the battery piece and the photovoltaic module provided by the invention are used for manufacturing the photovoltaic module.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a manufacturing method of a silicon wafer, a battery piece and a photovoltaic module.
Background
Currently, when preparing silicon photovoltaic cells, round silicon rods prepared by the czochralski method are generally required to be cut into square silicon rods. In the prior art, some manufacturers adopt a cutting mode with chamfers to improve the utilization rate of the round silicon rod, and the prepared battery piece is provided with four chamfers. Although the cutting mode has a high utilization rate of the round silicon rod, the cells with the four chamfers cannot be densely arranged in the photovoltaic module, and the improvement of the power of the photovoltaic module is limited. Some manufacturers cut and slice round silicon rods to form full-range silicon wafers (without chamfers) in order to realize the close arrangement of the cells in the photovoltaic module. Although the cells manufactured by the all-square silicon wafer can be densely arranged in the photovoltaic module, the utilization rate of the round silicon rod is low when the all-square silicon wafer is manufactured, so that the manufacturing cost of the photovoltaic module is increased. How to improve the utilization rate of the round silicon rod in the production process and reduce the cost while realizing the close arrangement of the cells in the photovoltaic module is an important difficult problem to be solved for manufacturing the photovoltaic module.
Disclosure of Invention
The invention aims to provide a manufacturing method of a silicon wafer, a battery piece and a photovoltaic module, so that the photovoltaic module produced by the manufacturing method of the silicon wafer can realize close packing, meanwhile, the utilization rate of a round silicon rod in the process of manufacturing the silicon wafer is improved, and the cost is reduced.
In a first aspect, the present invention provides a method for manufacturing a silicon wafer. The manufacturing method of the silicon wafer comprises the following steps:
providing a round silicon rod.
And cutting the round silicon rod along the quadrilateral preset cutting path to obtain the quadrilateral silicon rod. The quadrilateral predetermined cutting path comprises a first set of opposing corners and a second set of opposing corners, wherein the first set of opposing corners inscribes a cross-section of the circular silicon rod and the second set of opposing corners is located outside the cross-section of the circular silicon rod.
And slicing the quadrilateral silicon rod to obtain a quadrilateral silicon wafer with two opposite cambered surface chamfers.
When the technical scheme is adopted, the existing quadrilateral cutting path is improved, so that the first group of diagonals is inscribed in the cross section of the circular silicon rod, and the second group of diagonals is positioned outside the cross section of the circular silicon rod. At this time, compared with the full-range silicon rod obtained by inscribing the circular silicon rod in two groups of opposite corners of the quadrilateral cutting path, the quadrilateral silicon rod has a larger cross section area, so that the utilization rate of the circular silicon rod can be improved, and the generation of waste materials is reduced. In addition, the rectangular triangular sliced cell pieces formed after the rectangular sliced cell pieces are cut along the diagonal can be spliced into a rectangle in pairs and are densely arranged in the photovoltaic module. Therefore, the manufacturing method of the silicon wafer provided by the invention can improve the utilization rate of the circular silicon rod, and the photovoltaic modules produced by the manufacturing method of the silicon wafer can realize close arrangement and improve the power of the photovoltaic modules.
In some possible implementations, the quadrilateral predetermined cutting path has a rhombus shape. And the quadrilateral silicon wafer obtained by adopting the rhombic preset cutting path is a rhombic silicon wafer. When the two right-angled triangle sliced battery pieces are spliced, the bevel edge of the two right-angled triangle sliced battery pieces is the edge of the quadrilateral silicon slice. When the quadrangular silicon wafer is a rhombic silicon wafer, the lengths of four sides of the rhombic silicon wafer are the same, so that the lengths of two bevel edges, which are attached to two spliced right-angled triangular sliced battery pieces, are equal, and the regular rectangles can be conveniently spliced.
In some possible implementations, the first set of opposing corners includes an angle of each sharp angle greater than 90 ° and equal to or less than 120 °; the second set of opposing corners includes each sharp corner having an angle equal to or greater than 60 ° and less than 90 °. In this case, it is possible to ensure that a first set of diagonals inscribes the cross section of the circular silicon rod and a second set of diagonals lies outside the cross section of the circular silicon rod.
In some possible implementations, after the round silicon rod is cut along the quadrilateral preset cutting path and before the quadrilateral silicon rod is sliced, the method for manufacturing the silicon wafer further includes: and leveling the quadrilateral silicon rod.
After the leveling treatment, each side surface of the quadrilateral silicon rod has higher flatness. Correspondingly, each side surface of the finally obtained cell also has high flatness, and the cell is convenient to be densely arranged in the photovoltaic module. In addition, after the round silicon rod is cut into the quadrangular silicon rod, the formed arc surface chamfer angle has a tiny radian. The chamfer surface is subjected to flattening treatment, so that the chamfer surface with high flatness can be obtained. When two right triangle-shaped section battery pieces amalgamation, in view of the other sides of right triangle-shaped section battery piece are smooth plane, the higher chamfer face of roughness is a plane with other side amalgamation of right triangle-shaped section battery piece more easily to the rectangle after avoiding the amalgamation has the breach.
In some possible implementations, the flattening process is a grinding process or a cutting process.
In a second aspect, the invention also provides a battery piece. The battery piece is made of a quadrilateral silicon chip. The quadrilateral silicon wafer is the quadrilateral silicon wafer manufactured by the manufacturing method of the silicon wafer described in the first aspect or any possible implementation manner of the first aspect. The cell piece has a first pair of sharp corners that are diagonal to each other and a second pair of sharp corners that are diagonal to each other, the second pair of sharp corners including each sharp corner having a chamfer.
The beneficial effects of the battery cell provided by the second aspect may refer to the beneficial effects of the manufacturing method of the silicon wafer described in the first aspect or any possible implementation manner of the first aspect, and are not described herein again.
In some possible implementations, the battery cell has a blank area extending through the battery cell. The diagonal of the first pair of corners and/or the diagonal of the second pair of corners is located in the void area. The blank area arranged on the battery piece is used as a preset cutting line when the battery piece is cut, so that the battery piece is conveniently and accurately cut; on the other hand, the blank area does not need to form a grid line made of silver, so that the cost can be reduced.
In some possible implementations, the cell has a linear direction of the thin grid line intersecting with any one side edge of the quadrangular silicon wafer.
In some possible implementations, the cell has a main grid line whose linear direction intersects with any one side edge of the quadrangular silicon wafer.
In some possible implementations, the cell has a linear direction of the thin grid lines parallel to a diagonal of the first pair of sharp corners; the linear direction of the main grid line of the cell is parallel to the diagonal line of the second pair of sharp corners; or the linear direction of the thin grid lines of the battery slice is parallel to the diagonal line of the second pair of sharp corners, and the linear direction of the main grid lines of the battery slice is parallel to the diagonal line of the first pair of sharp corners. At the moment, the linear direction of the main grid line is perpendicular to any right-angle side of the right-angled triangle sliced battery piece formed after the battery piece is cut, so that the welding strip can be conveniently connected with the two right-angled triangle sliced battery pieces.
In some possible implementations, after the battery piece is cut along the diagonal of the first pair of sharp corners and the diagonal of the second pair of sharp corners of the battery piece, the battery piece is cut into four right-triangle sliced battery pieces, each having one of the acute corners with a chamfer. When the direct triangular sliced battery pieces with the shape and the structure are typeset, the chamfer surface of the chamfer of one right-angled triangular sliced battery piece and the side surface of the opposite side of the other right-angled triangular sliced battery piece with the acute angle of the chamfer can be positioned on the same plane, and the two are spliced into a plane. At the moment, the hypotenuses of the two right-angled triangular sliced battery pieces are attached to each other to form a rectangle, so that the problem that the positions of the chamfers are vacant when the battery pieces with the chamfers are typeset can be solved, the sliced battery pieces with the chamfers can be densely arranged, the space utilization rate of the assembly is improved, and the power of the photovoltaic assembly is improved.
In a third aspect, the invention also provides a photovoltaic module. The photovoltaic module comprises at least one pair of sliced battery pieces, wherein each pair of sliced battery pieces comprises sliced battery pieces as follows: the right-angled triangular battery piece is cut along a diagonal line of the first pair of sharp corners and a diagonal line of the second pair of sharp corners of the battery piece described in the second aspect or any possible implementation manner of the second aspect. The bevel edges of two right-angled triangular sliced battery pieces contained in each pair of sliced battery pieces are attached together.
The beneficial effects of the photovoltaic module provided by the third aspect may refer to the beneficial effects of the cell described in the second aspect or any possible implementation manner of the second aspect, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a prior art cutting method for cutting a round silicon rod into a square silicon rod;
fig. 2 is a schematic view illustrating a state where a circular silicon rod is cut along a quadrangular preset cutting path according to an embodiment of the present invention;
fig. 3 is a schematic view of a state of slicing a quadrilateral silicon rod to obtain a quadrilateral silicon wafer with two opposite chamfers according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a battery cell having a first electrode pattern according to an embodiment of the present invention, wherein a is a schematic diagram of a front side of the battery cell, and b is a schematic diagram of a back side of the battery cell;
fig. 5 is a schematic diagram of a battery cell having a second electrode pattern according to an embodiment of the present invention, wherein a is a schematic diagram of a front surface of the battery cell, and b is a schematic diagram of a back surface of the battery cell;
fig. 6 is a schematic diagram illustrating a state of cutting a battery piece according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a right-angled triangular sliced battery piece according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a right-angled triangular sliced battery piece in a splicing state according to an embodiment of the invention;
fig. 9 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present invention.
Reference numerals:
10-round silicon rod, 11-quadrilateral silicon slice, 12-cell slice, 121-blank area, 122-main grid, 123-fine grid, 20-quadrilateral preset cutting path, 30-photovoltaic module and 31-right triangle slice cell slice.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
With the development of photovoltaic technology, the photoelectric conversion efficiency of silicon photovoltaic cells reaches 26.7%, and the theoretical limit efficiency (29.4%) is approached. Due to the advantages of high conversion efficiency, mature technology and the like, the silicon photovoltaic cell has a dominant position in the solar cell market. At present, more than 80% of solar cells produced globally are silicon photovoltaic cells.
In the preparation of silicon photovoltaic cells, it is generally necessary to cut round silicon rods 10 prepared by the czochralski method into square silicon rods. As shown in fig. 1, in the prior art, in order to improve the utilization rate of the round silicon rod 10, some manufacturers generally adopt a cutting method with a chamfer. The four corners of the quadrilateral predetermined cutting path 20 of this cutting manner are located outside the cross section of the circular silicon rod, and after the circular silicon rod 10 is cut into a square silicon rod along the quadrilateral predetermined cutting path 20, the square silicon rod has four chamfers. Correspondingly, a photovoltaic cell fabricated using a square silicon rod with four chamfers also has four chamfers. When the photovoltaic cells with the four chamfers are arranged in the photovoltaic module in an array mode, a plurality of chamfer angle gathering areas are formed in the photovoltaic module. In the chamfer gathering area, a plurality of chamfers surround a blank area. A plurality of blank areas in the photovoltaic module make the photovoltaic cell piece can't be close packed, cause the waste of photovoltaic module space, thereby reduced photovoltaic module's space utilization, restricted the improvement of photovoltaic module power.
Some manufacturers cut and slice round silicon rods to form full-range silicon wafers (without chamfers) in order to realize the close arrangement of the cells in the photovoltaic module. Four corners of the quadrilateral preset cutting path of the cutting mode are located in the cross section of the round silicon rod, and more silicon materials need to be cut. Although the cells manufactured by the all-square silicon wafer can be densely arranged in the photovoltaic module, the utilization rate of the round silicon rod is low when the all-square silicon wafer is manufactured, so that the manufacturing cost of the photovoltaic module is increased. How to improve the utilization rate of the round silicon rod in the production process and reduce the cost while realizing the close arrangement of the cells in the photovoltaic module is an important difficult problem to be solved for manufacturing the photovoltaic module.
In order to solve the above technical problems, embodiments of the present invention provide a method for manufacturing a silicon wafer. The manufacturing method of the silicon wafer comprises the following steps:
a round silicon rod 10 is provided. The round silicon rod 10 may be a silicon rod manufactured by the czochralski method.
As shown in fig. 2, the circular silicon rod 10 is cut along a quadrangular preset cutting path 20 to obtain a quadrangular silicon rod. In practical applications, the diamond wire cutting apparatus may be used to cut the circular silicon rod 10. The cutting trajectories of the four diamond wires constitute a quadrangular preset cutting path 20. The quadrilateral predetermined cutting path 20 comprises a first set of opposing corners and a second set of opposing corners, wherein the first set of opposing corners inscribes the cross-section of the circular silicon rod 10 and the second set of opposing corners is located outside the cross-section of the circular silicon rod 10.
The quadrilateral pre-cut path 20 improves the existing quadrilateral cut path such that a first set of diagonals inscribes the cross-section of the circular silicon rod 10 and a second set of diagonals is located outside the cross-section of the circular silicon rod 10. At this time, in comparison with the all-round silicon rod obtained by inscribing the circular silicon rod 10 in both of the two sets of opposite corners of the quadrangular cutting path 20, the cross-sectional area of the quadrangular silicon rod is large, so that the utilization rate of the circular silicon rod 10 can be improved, and the generation of waste materials can be reduced. In addition, as shown in fig. 6 to 9, the rectangular silicon wafer 11 with two opposite arc chamfers and the right-angled triangular sliced battery pieces 31 formed after cutting along the diagonal can be spliced two by two to form a rectangle and densely arranged in the photovoltaic module 30. Therefore, the method for manufacturing the silicon wafer provided by the embodiment of the invention can not only improve the utilization rate of the circular silicon rod 10, but also realize internal close arrangement of the photovoltaic modules 30 produced by the method for manufacturing the silicon wafer and improve the power of the photovoltaic modules 30.
When the quadrilateral preset cutting path 20 is designed, the angles of the first set of opposite angles and the second set of opposite angles are adjusted, so that not only the angle of the quadrilateral silicon wafer 11 can be adjusted, but also the area ratio of the cross section of the quadrilateral silicon rod to the cross section of the circular silicon rod 10 can be further adjusted, namely the utilization rate of the circular silicon rod 10 is adjusted. Specifically, when the first set of diagonal corners is inscribed in the cross section of the circular silicon rod 10 and the second set of diagonal corners is located outside the cross section of the circular silicon rod 10, the angle of the second set of diagonal corners can be reduced and the angle of the first set of diagonal corners can be increased, so that the area ratio of the cross section of the obtained quadrilateral silicon rod to the cross section of the circular silicon rod 10 is increased, and the utilization rate of silicon material of the circular silicon rod 10 is improved.
While the utilization rate of silicon materials of the round silicon rod 10 is improved, in order to avoid that the second group of opposite angles are too sharp and the difference between adjacent sides of the spliced rectangle is too large, the angle of each sharp angle included by the first group of opposite angles is larger than 90 degrees and is smaller than or equal to 120 degrees; the second set of opposing corners includes each sharp corner having an angle equal to or greater than 60 ° and less than 90 °. In this case, it is possible not only to ensure that the first set of diagonals inscribes the cross section of the circular silicon rod and the second set of diagonals lies outside the cross section of the circular silicon rod, but also to ensure that the angle of the second set of diagonals is moderate.
Illustratively, the angle of the second set of diagonal corners may be 60 °, 66 °, 70 °, 75 °, 80 °, 85 °, 89 °, or the like. The angle of the first set of diagonals may be 120 °, 114 °, 110 °, 105 °, 100 °, 98 °, or 91 °
The quadrangular predetermined cutting path 20 has a rhombic shape in order to ensure that the right-angled triangular sliced battery pieces 31 manufactured as described below can be assembled into a regular rectangular shape. The quadrilateral silicon wafer 11 obtained by adopting the rhombic preset cutting path is a rhombic silicon wafer. When the two right-angled triangular sliced battery pieces 31 are spliced, the hypotenuse of the two right-angled triangular sliced battery pieces 31 is the side of the quadrilateral silicon wafer 11. When the quadrilateral silicon wafer 11 is a rhombus silicon wafer, the lengths of four sides of the rhombus silicon wafer are the same, so that the lengths of two bevel edges, which are attached to the two spliced right-angled triangular sliced battery pieces 31, are equal, and the regular rectangles can be conveniently spliced.
After the circular silicon rod 10 is cut along the quadrangular preset cutting path 20, the quadrangular silicon rod may be leveled. The flattening treatment mode is grinding treatment or cutting treatment.
In practical application, after the round silicon rod 10 is cut into a quadrangular silicon rod, the naturally formed chamfer surface is an arc surface with a slight radian, and the arc surface can be subjected to grinding treatment or cutting treatment, so that a chamfer surface with high flatness is formed. When two right-angled triangle sliced battery pieces 31 are spliced, considering that other side surfaces of the right-angled triangle sliced battery pieces 31 are flat planes, the chamfer surface with higher flatness is easier to splice with other side surfaces of the right-angled triangle sliced battery pieces 31 into a plane, so that the spliced rectangle is prevented from having gaps.
In specific implementation, each side surface of the quadrilateral silicon rod can be flattened, so that each side surface of the quadrilateral silicon rod has high flatness. Correspondingly, each side surface of the right-angled triangular sliced battery piece 31 manufactured by utilizing the quadrangular silicon rod also has higher flatness, so that the right-angled triangular sliced battery pieces can be conveniently spliced into a regular rectangle.
As shown in FIG. 3, the silicon rod is sliced to obtain a silicon wafer 11 having two opposing chamfers. In the quadrilateral silicon wafer 11 with two opposite cambered surface chamfers, the right-angled triangular sliced battery pieces 31 formed after cutting along the diagonal can be spliced into a rectangle in pairs and are densely arranged in the photovoltaic module 30. Therefore, the method for manufacturing the silicon wafer provided by the embodiment of the invention can not only improve the utilization rate of the circular silicon rod 10, but also realize internal close arrangement of the photovoltaic modules 30 produced by the method for manufacturing the silicon wafer and improve the power of the photovoltaic modules 30.
The quadrilateral silicon wafer 11 is characterized in that when a sheet-shaped silicon wafer is laid flat, the upper surface and the lower surface of the silicon wafer are quadrilateral, and the vertical distance between the upper surface and the lower surface is the thickness of the silicon wafer. Because the thickness of the silicon wafer is thin, and the shapes and the structures of the upper surface and the lower surface of the silicon wafer are the same, the whole silicon wafer can be represented by describing the shapes, the angles and the like of the upper surface or the lower surface of the silicon wafer. The quadrilateral silicon wafer 11 has a first pair of sharp corners diagonal to each other and a second pair of sharp corners diagonal to each other. The second pair of sharp corners includes each sharp corner having a chamfer. When the quadrilateral preset cutting path is in a rhombus shape, the side lengths of the obtained quadrilateral silicon wafers 11 are the same.
When the quadrilateral silicon wafer 11 is used for manufacturing the battery piece 12, the method further comprises the following steps:
the quadrilateral silicon wafer 11 is made into the battery piece 12 through the processes of texturing, diffusion, etching, retraction, deposition of a passivation film and an antireflection film, screen printing of a main grid and a fine grid, sintering and the like.
As shown in fig. 4 and 5, the present invention also provides a battery sheet 12. The battery piece is a battery piece 12 made of a quadrangular silicon wafer 11. The quadrilateral silicon wafer 11 is the quadrilateral silicon wafer 11 manufactured by the manufacturing method of the silicon wafer. The shape of the cell 12 is the same as that of the square silicon wafer 11. The cell sheet 12 has a first pair of sharp corners diagonal to each other and a second pair of sharp corners diagonal to each other, the second pair of sharp corners comprising each of the sharp corners having a chamfer. The chamfer can be a plane chamfer or an arc chamfer.
As shown in fig. 4 and 5, the front and rear surfaces of the battery sheet 12 have electrode patterns. The printing screens of the screen printing main grid and the fine grid can be customized according to the electrode patterns. The electrode patterns can also be superposed with various additional structures such as segments, hollows, pads and the like.
As shown in fig. 4 and 5, the electrode pattern may have a blank region 121 penetrating the battery sheet 12, that is, the battery sheet 12 has a blank region 121 penetrating the battery sheet 12. Specifically, the diagonal of the first pair of corners may be located in the blank area 121, the diagonal of the second pair of corners may be located in the blank area 121, or both the first pair of corners and the second pair of corners may be located in the blank area 121. The blank area 121 provided on the battery piece 12 is used as a preset cutting line when cutting the battery piece 12, so that the blank area is conveniently aligned during cutting. On the other hand, the blank region 121 does not need to form a gate line made of silver, which can reduce the cost.
It should be understood that the electrode pattern on the cell 12 is composed of the main gate lines 122 and the fine gate lines 123. The main gate lines 122 and the fine gate lines 123 may have various arrangement schemes. Specifically, the linear direction of the thin gate line 123 may intersect with any one side of the quadrilateral silicon wafer 11, or the linear direction of the main gate line 122 may intersect with any one side of the quadrilateral silicon wafer 11.
As shown in fig. 4, the linear direction of the thin gate line 123 is parallel to the diagonal of the first pair of sharp corners, and the linear direction of the main gate line 122 is parallel to the diagonal of the second pair of sharp corners. As shown in fig. 5, the linear direction of the thin grid lines 123 is parallel to the diagonal of the second pair of sharp corners, and the linear direction of the main grid lines 122 is parallel to the diagonal of the first pair of sharp corners. The linear direction of the main grid line 122 is perpendicular to any right-angle side of the right-angled triangular sliced battery piece 31 formed after the battery piece 12 is cut, so that the welding strip can connect the two right-angled triangular sliced battery pieces 31 conveniently.
As shown in fig. 6, after the battery piece 12 is cut along the diagonal line of the first pair of corners and the diagonal line of the second pair of corners of the battery piece 12, the battery piece 12 is cut into four right-angled triangular sliced battery pieces 31. The manner of cutting the cell sheet 12 may be laser cutting or mechanical cutting. As shown in fig. 7, each of the right-angled triangular sliced battery pieces 31 has an acute angle with a chamfer. The chamfer can be a plane chamfer or an arc chamfer.
As shown in fig. 8, when the straight triangular sliced battery pieces 31 with such a shape and structure are laid out, the chamfered surface of the chamfer of one right-angled triangular sliced battery piece 31 and the side surface of the opposite side of the other right-angled triangular sliced battery piece 31 with the acute angle of the chamfer can be in the same plane, and the two sides are joined together to form a plane. At this moment, the oblique edges of the two right-angled triangular sliced battery pieces 31 are attached to each other to be spliced into a rectangle, so that the problem that the positions of the chamfers are vacant when the battery pieces with the chamfers are typeset can be solved, the dense arrangement of the sliced battery pieces with the chamfers can be realized, the space utilization rate of the photovoltaic module 30 is improved, and the power of the photovoltaic module 30 is improved.
It should be understood that the two right-angled triangular sliced battery pieces 31 are attached to each other in a broad sense, and may be completely attached to each other or attached to each other with a certain distance between the two oblique sides.
The embodiment of the invention also provides a photovoltaic module 30. Fig. 9 shows a schematic structural diagram of a photovoltaic module. As shown in fig. 9, the photovoltaic module 30 includes at least one pair of sliced cells, each pair of sliced cells includes sliced cells: and cutting the battery piece 31 into a right-angled triangle along the diagonal line of the first pair of sharp corners and the diagonal line of the second pair of sharp corners of the battery piece. The hypotenuses of the two right-angled triangular sliced cells 31 contained in each pair of sliced cells are attached together. At this time, each pair of the right-angled triangular sliced cells 31 is spliced into the same shape as the photovoltaic module 30. It is understood that the number of the right-angled triangular sliced battery pieces 31 is 2n, and n is an integer greater than 0. At this time, the right-angled triangular sliced battery pieces 31 are paired, so that the situation that the single right-angled triangular sliced battery pieces 31 cannot be spliced is avoided.
In specific implementation, the plurality of right-angled triangular sliced battery pieces 31 can be electrically connected by welding with solder strips or bonding with conductive adhesive to form a battery string set. In the battery string set, a plurality of right-angled triangular sliced battery pieces 31 are spliced in pairs and arrayed. The electrically connected cell string is subjected to lamination, framing, junction box mounting, curing, testing, and the like to form the photovoltaic module 30.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A method for manufacturing a silicon wafer is characterized in that,
providing a round silicon rod;
cutting the round silicon rod along a quadrilateral preset cutting path to obtain a quadrilateral silicon rod; the quadrilateral pre-set cutting path comprises a first set of opposing corners and a second set of opposing corners, wherein the first set of opposing corners inscribes the cross-section of the circular silicon rod and the second set of opposing corners is located outside the cross-section of the circular silicon rod;
slicing the quadrilateral silicon rod to obtain a quadrilateral silicon wafer with two opposite arc surface chamfers;
the quadrilateral preset cutting path is in a diamond shape, the angle of each sharp angle included by the first set of opposite corners is greater than 90 degrees and less than or equal to 120 degrees, and the angle of each sharp angle included by the second set of opposite corners is greater than or equal to 60 degrees and less than 90 degrees.
2. The method for producing silicon wafers as claimed in claim 1, wherein after the round silicon rod is sliced along the quadrangular predetermined slicing path and before the quadrangular silicon rod is sliced, the method further comprises: and carrying out leveling treatment on the quadrilateral silicon rod.
3. The method for manufacturing a silicon wafer according to claim 2, wherein the flattening treatment is a grinding treatment or a cutting treatment.
4. A battery piece is characterized in that the battery piece is made of a quadrilateral silicon piece, and the quadrilateral silicon piece is made of the silicon piece manufacturing method according to any one of claims 1 to 3; the battery piece is provided with a first pair of sharp corners which are opposite angles to each other and a second pair of sharp corners which are opposite angles to each other, and each sharp corner included in the second pair of sharp corners is provided with a chamfer angle.
5. The battery piece of claim 4, wherein the battery piece has a blank area through the battery piece, and wherein the diagonal of the first pair of sharp corners and/or the diagonal of the second pair of sharp corners are located in the blank area.
6. The battery piece according to claim 4 or 5, wherein the battery piece is provided with thin grid lines, and the linear direction of the thin grid lines intersects with any one side edge of the quadrilateral silicon piece; and/or the presence of a gas in the gas,
the linear direction of the main grid line of the cell is intersected with any side edge of the quadrilateral silicon wafer.
7. The cell of claim 6, wherein the cell has a linear direction of the fine grid lines parallel to a diagonal of the first pair of sharp corners; the linear direction of the main grid line of the battery piece is parallel to the diagonal line of the second diagonal angle; or the like, or, alternatively,
the linear direction of the thin grid lines of the battery piece is parallel to the diagonal line of the second pair of sharp corners, and the linear direction of the main grid lines of the battery piece is parallel to the diagonal line of the first pair of sharp corners.
8. The battery sheet according to claim 4 or 5,
after the battery piece is cut along the diagonal line of the first diagonal angle and the diagonal line of the second diagonal angle of the battery piece, the battery piece is cut into four right-angled triangular sliced battery pieces, and each right-angled triangular sliced battery piece has an acute angle with a chamfer.
9. A photovoltaic module comprising at least one pair of sliced cells, each pair of sliced cells comprising: a right-angled triangular sliced cell piece cut along a diagonal of a first pair of sharp corners and a diagonal of a second pair of sharp corners of the cell piece according to any one of claims 4 to 8; the bevel edges of the two right-angled triangular battery pieces contained in each pair of sliced battery pieces are attached together.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1922472A (en) * | 2004-02-20 | 2007-02-28 | 可再生能源公司 | Establishing correspondence and traceability between wafers and solar cells |
| CN101241939A (en) * | 2008-03-21 | 2008-08-13 | 常州有则科技有限公司 | Ultra-thin solar silicon slice and its cutting technology |
| JP2008235604A (en) * | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | Solar cell manufacturing method and the solar cell |
| CN102049818A (en) * | 2009-10-28 | 2011-05-11 | 上海日进机床有限公司 | Cutting method for crystalline silicon ingot |
| CN108364999A (en) * | 2018-01-29 | 2018-08-03 | 泰州隆基乐叶光伏科技有限公司 | A kind of monocrystalline mixes gallium silicon chip and preparation method thereof and solar cell |
| CN110085703A (en) * | 2019-04-24 | 2019-08-02 | 西安交通大学 | A kind of dicing method and joining method of regular hexagonal solar cell piece |
| CN111341865A (en) * | 2018-11-30 | 2020-06-26 | 泰州隆基乐叶光伏科技有限公司 | Solar silicon wafer, solar cell module and manufacturing method thereof |
-
2020
- 2020-08-31 CN CN202010896362.9A patent/CN112071952B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1922472A (en) * | 2004-02-20 | 2007-02-28 | 可再生能源公司 | Establishing correspondence and traceability between wafers and solar cells |
| JP2008235604A (en) * | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | Solar cell manufacturing method and the solar cell |
| CN101241939A (en) * | 2008-03-21 | 2008-08-13 | 常州有则科技有限公司 | Ultra-thin solar silicon slice and its cutting technology |
| CN102049818A (en) * | 2009-10-28 | 2011-05-11 | 上海日进机床有限公司 | Cutting method for crystalline silicon ingot |
| CN108364999A (en) * | 2018-01-29 | 2018-08-03 | 泰州隆基乐叶光伏科技有限公司 | A kind of monocrystalline mixes gallium silicon chip and preparation method thereof and solar cell |
| CN111341865A (en) * | 2018-11-30 | 2020-06-26 | 泰州隆基乐叶光伏科技有限公司 | Solar silicon wafer, solar cell module and manufacturing method thereof |
| CN110085703A (en) * | 2019-04-24 | 2019-08-02 | 西安交通大学 | A kind of dicing method and joining method of regular hexagonal solar cell piece |
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