CN202826102U

CN202826102U - Diamond wire with non-cut surface

Info

Publication number: CN202826102U
Application number: CN 201220451262
Authority: CN
Inventors: 吴豪
Original assignee: Individual
Current assignee: Individual
Priority date: 2012-09-06
Filing date: 2012-09-06
Publication date: 2013-03-27
Anticipated expiration: 2022-09-06

Abstract

The utility model relates to cutting of hard brittle materials, in particular to a cutting tool of the hard brittle materials. A diamond wire with a non-cut surface comprises a diamond wire and is characterized in that one end of the diamond wire is fixedly provided with diamond grains to form a cutting surface contacting and cutting materials to be cut, and the other end of the diamond wire is not fixedly provided with the diamond grains to form the non-cut surface. During the cutting of the hard brittle materials, the diamond wire can only contact and cut the materials to be cut when the diamond wire is close to one side of a cutting area. And therefore the non-cut surface on which the diamond wire and the materials to be cut are not contacted can not be provided with the diamond grains. As major cost of the diamond wire mainly comes from high cost of the diamond grains, the diamond wire with the non-cut surface is capable of ensuring ordinary operation of the cutting and reducing production cost of the diamond wire.

Description

Be provided with the diamond wire of non-cut surface

Technical field

The utility model relates to the cutting of hard brittle material, is specifically related to hard brittle material cutting instrument.

Background technology

Silicon materials are widely used in semiconductor and field of solar energy, and the silicon materials section is the important step during semiconductor manufacturing and crystal silicon solar batteries are produced.The problems such as traditional mortar cutting technique exists efficient low, and the processed finished products cutting damage is serious.Comparatively speaking, the diamond wire cutting technique can be enhanced productivity greatly, avoid simultaneously using carborundum and the polyethylene glycol cutting liquid of high energy consumption, be conducive to set up environmentally friendly silicon chip production and processing condition and reduce cost, thereby become the new developing direction of microtomy.

Because silicon materials have hard fragility at normal temperatures, and silicon wafer thickness usually less (less than 200 microns), so silicon chip is easy to fragmentation.Especially silicon chip will be held and transmit in follow-up battery processing technology, thereby the stress that clamping device produces at silicon chip can cause the expansion of silicon chip internal fissure to cause breaking of whole silicon chip.Therefore, reduce the productive rate that damage in the silicon chip and crackle can the Effective Raise solar cells.

Damage and crackle in the silicon chip mainly produce in slicing processes.Although silicon chip will be through being etched with the damage layer of eliminating the surface after the cutting, residual crackle remains the immediate cause that causes the silicon chip breakage.There are some researches show, the crack number of silicon chip edge and density are all greater than other zones.In view of the material impact of line cutting process to the silicon chip mechanical strength, it is very important that optimal design diamond wire structure and machining condition just seem.

The utility model content

The purpose of this utility model is, a kind of diamond wire that is provided with non-cut surface is provided, to optimize the structure of diamond wire.

The technical problem that the utility model solves can realize by the following technical solutions:

Be provided with the diamond wire of non-cut surface, comprise a steel wire, it is characterized in that, a side of described steel wire is the fixed diamond abrasive particle not, consists of non-cut surface; Opposite side is fixed with diamond abrasive grain, consists of a cut surface that contacts and cut with material to be cut.

In the process of crisp hard material cutting, diamond wire only just might contact and cut with material to be cut in the side near cutting zone, therefore, on diamond wire and the non-contacting non-cut surface of material to be cut diamond abrasive grain can be set.Because the important cost of diamond wire comes from expensive diamond abrasive grain, this design can guarantee to reduce the diamond wire cost of manufacture when cutting is normally carried out.

Described steel wire diameter is the 100-150 micron.Like this, be conducive to control the size and shape of the diamond abrasive grain on the steel wire.When being used for the crystalline silicon cutting, because the width in cutting chamber has determined the loss situation of silicon material in the working angles, so in order to reduce the loss of silicon material, described steel wire diameter is the 100-120 micron.

The utility model can be used for crystalline silicon section, squaring silicon bar, sapphire slices, carborundum cutting etc.

Described diamond abrasive grain can be bonded on the described steel wire, and described diamond abrasive grain also can be embedded on the described steel wire, and described diamond abrasive grain can also be plated on the described steel wire.

Mind-set both sides direction in described cut surface, the size of described diamond abrasive grain diminishes gradually, and sharpness reduces gradually.

Its cutting power of adamantine size and size impact has also determined the ability that causes silicon base to damage simultaneously.Diamond abrasive grain is of a size of the 10-35 micron.The diamond abrasive grain that is positioned at the center is of a size of the 25-35 micron, has sharp cutting edge.Be positioned at outermost diamond abrasive grain and be of a size of the 9-11 micron, preferred 10 microns, and without sharp corner angle.

Described steel wire is divided into two parts, and the surface area that is fixed with the cut surface of diamond abrasive grain equals the surface area of non-cut surface.

Description of drawings

Fig. 1 is the cross sectional representation of cutting cavity segment in the cutting process;

Fig. 2 is the primary structure schematic diagram of diced system of the present utility model.

The specific embodiment

For technological means, creation characteristic that the utility model is realized, reach purpose with effect is easy to understand, below in conjunction with the further elaboration the utility model of concrete diagram.

Referring to Fig. 1 and Fig. 2, be provided with the diamond wire 1 of non-cut surface, comprise a steel wire 11, a side of steel wire 11 is fixed with diamond abrasive grain 12, consists of a cut surface that contacts and cut with material to be cut; Opposite side is fixed diamond abrasive particle 12 not, consists of non-cut surface.

Steel wire 11 makes diamond abrasive grain 12 be fixed in a side of steel wire 11 by plating, resin bonding and/or the mode of inlaying.

In the process of crisp hard material cutting, diamond wire only just might contact and cut with material to be cut in the side near cutting zone, among the figure, diamond wire only just might contact and cut with crystal silicon substrate 3 in the side near cutting zone, therefore, on diamond wire and the non-contacting non-cut surface of material to be cut, diamond abrasive grain 12 can be set.Because the important cost of diamond wire comes from expensive diamond abrasive grain 12, this design can guarantee to reduce the diamond wire cost of manufacture when cutting is normally carried out.

When being used for the crystalline silicon cutting, because the width in cutting chamber has determined the loss situation of silicon material in the working angles, so in order to reduce the loss of silicon material, steel wire 11 diameters are the 100-120 micron.If cutting other materials or at other working angles, for example squaring silicon bar and sapphire slices, steel wire 11 diameters can correspondingly increase, thereby make the distribution of size and shape on steel wire 11 of diamond abrasive grain 12 can easierly be controlled.

The shape of diamond abrasive grain 12 also has a direct impact cutting power.Sharp keen abrasive particle namely has the abrasive particle of wedge angle (little profile radius) and/or little profile angle, can more easily cause the silicon materials brittle fracture and produce micro-crack.To two side directions, the size of diamond abrasive grain 12 diminishes gradually from the cut surface center, and sharpness reduces gradually.

Fig. 1, steel wire 11 is divided into two parts, and the surface area that is fixed with the cut surface of diamond abrasive grain 12 equals the surface area of non-cut surface.At the cut surface that diamond wire contacts with crystal silicon substrate 3, the layout of diamond abrasive grain 12 adopts following strategy.Suppose that α is as angular vertex take the diamond wire center of circle, the angle of diamond wire surf zone and diamond wire direction of feed, α by 0 ° to 90 ° process that increases to both sides in, the size of diamond wire surface diamond abrasive particle 12 diminishes gradually, shape is by sharply becoming gradually round and smooth.

The α that concentrates at cutting behavior adopts sharp keen abrasive particle to accelerate to cut the silicon base material near 0 ° zone.There are some researches show, mellow and full abrasive particle can reduce the generation of brittle fracture, thereby silicon materials are removed by plastic deformation (being similar to the retrospective distortion of metal material), thereby has reduced the generation of damage and crackle.Use mellow and full abrasive particle at α near 90 ° zone, can effectively reduce silicon chip finished surface crackle.

Its cutting power of the size of diamond abrasive grain 12 and size impact has also determined the ability that causes silicon base to damage simultaneously.Diamond abrasive grain 12 is of a size of the 10-35 micron.The diamond abrasive grain 12 that is positioned at the center is of a size of the 25-35 micron, has sharp cutting edge.Be positioned at outermost diamond abrasive grain 12 and be of a size of the 9-11 micron, preferred 10 microns, and without sharp corner angle.

Among Fig. 1, the zone in α=90 °, the silicon base that is cut will become the surface of finished product silicon chip.Therefore, use the little abrasive particle of size at α near 90 ° zone, can effectively reduce the damage of finished product silicon chip.Simultaneously, also having determined the width in whole cutting chamber in diamond abrasive grain 12 sizes of α=90 ° near zone, also is the loss of silicon material in the slicing processes.The use of small size abrasive particle can effectively reduce the loss of silicon material.

The size and shape of diamond abrasive grain 12 need to carry out strict differentiation.In the silicon slicing processes, in the zone of α near 90 °, the abrasive particle size can between the 25-35 micron, need to have sharp cutting edge; And in the zone of α near 90 °, the abrasive particle size should be about 10 microns, and without sharp corner angle.Whole steel wire 11 surfaces of mosaic diamond abrasive particle 12 that need are divided into several zones (3 or 5), prepare diamond abrasive grain 12 and inlay according to the aforesaid subregion that requires.

With reference to Fig. 2, employing is provided with the diced system of the diamond wire of non-cut surface, comprise a diamond wire diced system main body, diamond wire diced system main body comprises wire wheels, supplies bobbin 22, spool 21, cutting feeder, cutting feeder is provided with cutting fluid for mouth 25, diamond wire is on the wire wheels, and diamond wire adopts the diamond wire 1 that is provided with non-cut surface;

Be provided with the diamond wire of non-cut surface, comprise a steel wire 11, a side of steel wire 11 is fixed with diamond abrasive grain 12, consists of a cut surface that contacts and cut with material to be cut; Opposite side is fixed diamond abrasive particle 12 not, consists of non-cut surface;

The cut surface of diamond wire is outside the wire wheels, and non-cut surface and guide roller winding are touched.

Diamond wire diced system main body is crystalline silicon section diamond wire diced system main body, the crystalline silicon section comprises also that with diamond wire diced system main body one is used for the silicon rod feed system of the direction of feed of control silicon rod, silicon rod 24 directions of feed of silicon rod feed system are by two, one is from top to bottom, another is from bottom to top, two simultaneously feedings of direction of feed.

The wire wheels comprise four guide rollers 23, and diamond wire is looped around four guide roller 23 outsides.

In use, for reducing the silicon materials brittle fracture, increase it by the ability of plastic working, when the 5-10 millimeter that is positioned at the silicon rod two ends is cut, the cutting feed speed is lower than normal speed, and cutting fluid viscosity is higher than normal viscosity, and rushes the lubricating fluid that is added with weak hydrogen bond in cutting fluid.

Above demonstration and described basic principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; that describes in above-described embodiment and the specification just illustrates principle of the present utility model; under the prerequisite that does not break away from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is defined by appending claims and equivalent thereof.

Claims

1. be provided with the diamond wire of non-cut surface, comprise a steel wire, it is characterized in that, a side of described steel wire is the fixed diamond abrasive particle not, consists of non-cut surface; Opposite side is fixed with diamond abrasive grain, consists of a cut surface that contacts and cut with material to be cut.

2. the diamond wire that is provided with non-cut surface according to claim 1 is characterized in that, described steel wire diameter is the 100-150 micron.

3. the diamond wire that is provided with non-cut surface according to claim 2 is characterized in that, described steel wire diameter is the 100-120 micron.

4. the diamond wire that is provided with non-cut surface according to claim 1 is characterized in that, mind-set both sides direction in described cut surface, and the size of described diamond abrasive grain diminishes gradually, and sharpness reduces gradually.

5. the diamond wire that is provided with non-cut surface according to claim 4 is characterized in that, diamond abrasive grain is of a size of the 10-35 micron.

6. the diamond wire that is provided with non-cut surface according to claim 5 is characterized in that, the diamond abrasive grain that is positioned at the center is of a size of the 25-35 micron, is positioned at outermost diamond abrasive grain and is of a size of the 9-11 micron.

7. the diamond wire that is provided with non-cut surface according to claim 6 is characterized in that, is positioned at outermost diamond abrasive grain and is of a size of 10 microns.

8. the described diamond wire that is provided with non-cut surface of any one is characterized in that according to claim 1-7, and described steel wire is divided into two parts, and the surface area that is fixed with the cut surface of diamond abrasive grain equals the surface area of non-cut surface.

9. the diamond wire that is provided with non-cut surface according to claim 8 is characterized in that, described diamond abrasive grain is bonded on the described steel wire.

10. the diamond wire that is provided with non-cut surface according to claim 8 is characterized in that, described diamond abrasive grain is embedded on the described steel wire.