CN102975302B - Silicon block cutting fixing structure, silicon block cutting method and silicon wafer - Google Patents
Silicon block cutting fixing structure, silicon block cutting method and silicon wafer Download PDFInfo
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- CN102975302B CN102975302B CN201210520117.3A CN201210520117A CN102975302B CN 102975302 B CN102975302 B CN 102975302B CN 201210520117 A CN201210520117 A CN 201210520117A CN 102975302 B CN102975302 B CN 102975302B
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- silico briquette
- support portion
- bonding strip
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Abstract
The invention provides a silicon block cutting fixing structure, a silicon block cutting method and a silicon wafer. The silicon block cutting fixing structure comprises a support part, a plurality of bonding strips and a silicon block, wherein the bonding strips are mutually isolated and arranged on the upper surface of the support part, and the silicon block is fixedly arranged on the support part through the bonding strips. The silicon block is fixedly arranged on the support part by utilizing the bonding strips, wherein the area of each bonding strip is less than the bottom area of the silicon block, so that the area of silica gel used by the bonding strips and the probability of edge breakage which occurs on the bottom end of the silicon block are effectively reduced, the workload for removing the bonding strips from the silicon wafer after cutting is reduced, and the working efficiency is increased.
Description
Technical field
The present invention relates to field of photovoltaic technology, in particular to a kind of silico briquette cutting fixed structure, method for cutting silicon block and silicon chip.
Background technology
Photovoltaic generation is the technology utilizing semi-conducting material photovoltaic effect principle directly solar radiant energy to be converted to electric energy.Crystalline silicon blocks is the main material making photovoltaic solar cell.Silico briquette cutting is the upstream key technology that electronics industry main raw material(s) silico briquette (wafer) is produced, and the quality of cutting and scale directly have influence on the subsequent production of whole industrial chain.In the electronics industry, the demand of silico briquette is mainly manifested in the semiconductor industry such as solar energy power generating and integrated circuit.
The common method of silico briquette cutting:
Silico briquette processing process is generally through stages such as crystal growth, cut-out, broken side, external diameter barreling, chamfering, grinding, bonding, section, cleaning, packagings.Photovoltaic generation and developing rapidly of semicon industry are had higher requirement to the processing of silico briquette in recent years: on the one hand in order to reduce manufacturing cost, silico briquette trend ever-larger diameters; Require that silico briquette has high flatness precision and minimum surface roughness on the other hand.But because silicon materials have the features such as crisp, hard, diameter increases the buckling deformation caused in processing, and machining accuracy not easily ensures; Thickness increases, chip thickness thinningly causes that material removal amount is large, degradation under efficiency.
Silico briquette section is as the critical process of silico briquette processing process, and its working (machining) efficiency and crudy are directly connected to the overall situation that whole silico briquette is produced.At present, silico briquette is cut into slices the multi-wire slicing (bonded-abrasive scroll saw be in fact a kind of cut with linear cutter) of the free abrasive particle of more employing.Multi-wire slicing technology is the Novel silicon block cutting technique emerged in recent years, and it drives carborundum abrasive to carry out attrition process by wire and cuts silico briquette.Compare with the cutting of traditional inner circle, multi-wire slicing have that cutting efficiency is high, spillage of material is little, cost reduces, surface quality of silicon block is high, can cutting large size material, facilitate the features such as following process.
As shown in Figure 1, glass plate 3 ' is first bonded on the pallet 1 ' of equipment by AB silica gel by prior art, then silica gel is used to bond on glass plate 3 ' by silico briquette 5 ', by the solidification of a period of time, bonding reach certain intensity after, silico briquette 5 ' can be put into equipment, by workbench, pallet 1 ' be clamped, like this, silico briquette 5 ' is fixed.Silico briquette 5 ' under this fixed form is in cutting process, bottom due to silico briquette 5 ' has large-area silica gel to remain, when steel wire cutter bottom, have silica gel and silico briquette 5 ' and produce to be shifted and twist, cause silico briquette 5 ' to occur collapsing the risk on limit in bottom, simultaneously, due to the size of existing glass plate 3 ' and the wide of silico briquette 5 ', need to consume a large amount of silica gel, not only increased the consumption of silica gel and glass plate 3 ', remove pallet silica gel after also giving cutting to make troubles, reduce operating efficiency.
Summary of the invention
The present invention aims to provide the cutting of a kind of silico briquette fixed structure, method for cutting silicon block and silicon chip, effectively reduces the probability that silicon chip collapses limit, fragment.
To achieve these goals, according to an aspect of the present invention, provide a kind of silico briquette cutting fixed structure, comprising: support portion; Multiple bonding strip, bonding strip is arranged on the upper surface of support portion mutually isolatedly; Silico briquette, is fixed on support portion by bonding strip.
Further, above-mentioned bonding strip is arranged on support portion equally spacedly.
Further, above-mentioned support portion comprise mutually isolated and with bonding strip support bar one to one, bonding strip is arranged on support bar.
Further, extending longitudinally along silico briquette of above-mentioned bonding strip.
Further, the outward flange extended longitudinally of above-mentioned support portion is positioned at the segment distance place, outer peripheral inner side one extended longitudinally of silico briquette 5.
Further, an above-mentioned segment distance is between 0.2 ~ 2mm.
Further, the longitudinal edge of the close silico briquette of above-mentioned support portion has chamfering.
Further, above-mentioned silico briquette cutting fixed structure also comprises: pallet, and support portion is arranged on pallet; Layer of silica gel, layer of silica gel is arranged between support portion and pallet and is fixed on pallet support portion.
According to a further aspect in the invention, provide a kind of method for cutting silicon block, method for cutting silicon block comprises: S1, adopt mutually isolated multiple bonding strips to be fixed on support portion by silico briquette; S2, laterally silico briquette is cut into silicon chip along silico briquette.
Further, be also included in above-mentioned steps S1 on support portion and apply the process that adhesive glue forms bonding strip equally spacedly.
Further, above-mentioned support portion comprise mutually isolated and with bonding strip support bar one to one, step S1 is also included in and support bar applies the process that adhesive glue forms bonding strip.
Further, extending longitudinally along silico briquette of above-mentioned bonding strip.
According to another aspect of the invention, provide a kind of silicon chip, this silicon chip is the silicon chip adopting above-mentioned method for cutting silicon block cutting to obtain.
Apply technical scheme of the present invention, silico briquette is fixed on support portion by the multiple bonding strips utilizing area to be less than the floor space of silico briquette, effectively reduce the probability that limit appears collapsing in the area of bonding strip used silica gel and silico briquette bottom, and the bonding strip workload removed after reducing cutting on silicon chip, improves operating efficiency.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the front view of the silico briquette cutting fixed structure according to prior art;
Fig. 2 shows the front view of the silico briquette cutting fixed structure according to a kind of preferred embodiment of the present invention; And
Fig. 3 illustrates the perspective view of the silico briquette cutting fixed structure shown in Fig. 2.
Detailed description of the invention
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
As shown in Figures 2 and 3, in the typical embodiment of one of the present invention, provide a kind of silico briquette cutting fixed structure, comprise support portion 3, multiple bonding strip 4 and silico briquette 5; Bonding strip 4 is arranged on the upper surface of support portion 3 mutually isolatedly; Silico briquette 5 is fixed on support portion 3 by bonding strip 4.
There is the silico briquette cutting fixed structure of said structure, silico briquette 5 is fixed on support portion 3 by the multiple bonding strips 4 utilizing area to be less than the floor space of silico briquette 5, effectively reduce the probability that limit appears collapsing in the area of bonding strip 4 used silica gel and silico briquette 5 bottom, and bonding strip 4 workload removed after reducing cutting on silicon chip, improves operating efficiency.Above-mentioned support portion 3 can adopt sand blasting glass conventional at present to make.
Occur that discontinuity causes the danger of collapsing limit in order to remain on the position not arranging bonding strip 3 in cutting process owing to lacking support, preferred bonding strip 4 is arranged on support portion 3 equally spacedly.
In a kind of preferred embodiment of the present invention, in order to reduce the consumption of support portion 3 in silico briquette cutting fixed structure, further minimizing cost, preferred support portion 3 comprise mutually isolated and with bonding strip 4 support bar one to one, bonding strip 4 is arranged on support bar.
Adopt above-mentioned silico briquette to cut fixed structure, every megawatt can save silica gel 9300g, amounts to RMB 2325 yuan; Save glass consumption 2/5ths, amount to 1529.85 yuan, two add up to 3854.85 yuan.Calculate by the annual 2.5GW of production, direct material expense 963.71 ten thousand yuan can be saved every year.Be not only the saving of cost, degumming process technique is simple especially, and the raising of efficiency and the minimizing of energy resource consumption, also can reduce environmental pollution simultaneously, produces huge social benefit.
In order to adapt to the direction that the conventional longitudinal direction along silico briquette is cut better, extending longitudinally along support portion 3 of preferred above-mentioned bonding strip 4.
In another kind of preferred embodiment of the present invention, the outward flange extended longitudinally of above-mentioned support portion 3 is positioned at the segment distance place, outer peripheral inner side one extended longitudinally of silico briquette 5.
The outward flange of the outward flange and silico briquette 5 that are positioned at support portion 3 is left a segment distance, when boning silico briquette 5 and support portion 3, the unnecessary adhesive glue of the part of bonding strip 4 can be made to overflow to the outside of support portion 3, and can not be bonded in too much on silico briquette 5, the cleaning of cutting the silicon chip of rear formation to silico briquette 5 brings difficulty.
While realization avoids too much silica gel residual, in order to ensure the fastness that silico briquette bonds, preferably an above-mentioned segment distance is between 0.2 ~ 2mm.
As shown in Figure 2, the longitudinal edge of the close silico briquette 5 of support portion 3 has chamfering.
When on support portion 3, setting has the edge of chamfering, the outward flange of support portion 3 can be made concordant with the outward flange of silico briquette 5 or be arranged on the outer peripheral inner side of support portion 3, no matter be that above any one set-up mode all can make the unnecessary adhesive glue of the part of bonding strip 4 overflow to the outside of support portion 3, and can not be bonded in too much on silico briquette 5, the cleaning of cutting the silicon chip of rear formation for silico briquette 5 brings difficulty.
As shown in Figures 2 and 3, above-mentioned silico briquette cutting fixed structure also comprises: pallet 1 and layer of silica gel 2, and support portion 3 is arranged on pallet 1; Layer of silica gel 2 is arranged between support portion 3 and pallet 1 and is fixed on pallet 1 support portion 3.Adopt conventional silica gel can realize good bonding between the support portion 3 of above-mentioned silico briquette cutting fixed structure and pallet 1.
In the typical embodiment of another kind of the present invention, additionally provide a kind of method for cutting silicon block, this method for cutting silicon block comprises: S1, adopt mutually isolated multiple bonding strips 4 to be fixed on support portion 3 by silico briquette 5; S2, laterally silico briquette 5 is cut into silicon chip along silico briquette 5.
Above-mentioned silico briquette cutting fixed structure is adopted to fix silico briquette, decrease the area for the bonding strip 4 of bond silico briquette 5 and support portion 3 in cutting process, therefore conventional cutting technique can be adopted to cut along the longitudinal direction of silico briquette, decrease the occurrence probability that silicon chip collapses limit simultaneously, improve the finished product yield of silicon chip; And decrease the cleaning that cleaning is bonded in the bonding strip 4 on silicon chip, improve the operating efficiency of silico briquette cutting.
In another preferred embodiment of the present invention, be also included in above-mentioned steps S1 on support portion 3 and apply the process that adhesive glue forms bonding strip 4 equally spacedly.Efficiently avoid the position that bonding strip 4 is not set in cutting process and occur that discontinuity causes the danger of collapsing limit owing to lacking support,
In another preferred embodiment of the present invention, above-mentioned support portion 3 comprise mutually isolated and with bonding strip 4 support bar one to one, step S1 is also included in and support bar applies the process that adhesive glue forms bonding strip 4.Bonding strip 4 is arranged on the support bar of isolation mutually, greatly reduces the consumption of adhesive glue, saved silico briquette cutting cost.
In order to adapt to the cut direction of silico briquette better and each silicon chip for being formed be securely fixed on support portion 3 as far as possible, extending longitudinally along silico briquette 5 of preferred bonding strip 4.
In another typical embodiment of the present invention, additionally provide a kind of silicon chip, silicon chip is adopt above-mentioned method for cutting silicon block to cut the silicon chip obtained.The side table rate that collapses of the silicon chip in this embodiment decreases, and qualification rate rises.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a silico briquette cutting fixed structure, is characterized in that, comprising:
Support portion (3);
Multiple bonding strip (4), described bonding strip (4) is arranged on the upper surface of described support portion (3) mutually isolatedly;
Silico briquette (5), is fixed on described support portion (3) by described bonding strip (4), wherein,
Described bonding strip (4) is arranged on described support portion (3) equally spacedly, described support portion (3) comprise mutually isolated and with described bonding strip (4) support bar one to one, described bonding strip (4) is arranged on described support bar, described bonding strip (4) is extending longitudinally along described silico briquette (5)
The outward flange extended longitudinally of described support portion (3) is positioned at the segment distance place, outer peripheral inner side one extended longitudinally of described silico briquette (5), a described segment distance is between 0.2 ~ 2mm, and the longitudinal edge of the close described silico briquette (5) of described support portion (3) has chamfering;
Described silico briquette cutting fixed structure also comprises:
Pallet (1), described support portion (3) are arranged on described pallet (1);
Layer of silica gel (2), described layer of silica gel (2) is arranged between described support portion (3) and described pallet (1) and described support portion (3) is fixed on described pallet (1).
2. a method for cutting silicon block, is characterized in that, described method for cutting silicon block comprises:
Described silico briquette (5) is fixed on support portion (3) by S1, the mutually isolated multiple bonding strips (4) adopting silico briquette according to claim 1 to cut fixed structure;
S2, laterally described silico briquette (5) is cut into silicon chip along described silico briquette (5), wherein,
Described support portion (3) comprise mutually isolated and with described bonding strip (4) support bar one to one, described step S1 is also included on support bar and applies the process that adhesive glue forms described bonding strip (4).
3. a silicon chip, is characterized in that, described silicon chip is adopt method for cutting silicon block according to claim 2 to cut the silicon chip obtained.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210520117.3A CN102975302B (en) | 2012-12-05 | 2012-12-05 | Silicon block cutting fixing structure, silicon block cutting method and silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210520117.3A CN102975302B (en) | 2012-12-05 | 2012-12-05 | Silicon block cutting fixing structure, silicon block cutting method and silicon wafer |
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| CN102975302A CN102975302A (en) | 2013-03-20 |
| CN102975302B true CN102975302B (en) | 2015-04-22 |
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| CN109184138B (en) * | 2018-11-08 | 2024-01-23 | 浙江世友木业有限公司 | Self-adhesive solid wood floor and production method thereof |
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| CN201970408U (en) * | 2010-11-25 | 2011-09-14 | 浙江昱辉阳光能源有限公司 | Cutting clamp for crystal silicon block |
| CN102514109A (en) * | 2011-12-30 | 2012-06-27 | 上海硅酸盐研究所中试基地 | Fixed and aligned cutting method of silicon carbide crystal |
| CN102744799A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Crystal bar bonding method |
| CN202556603U (en) * | 2012-05-23 | 2012-11-28 | 浙江锦锋光伏科技有限公司 | To-be-cut silicon bar |
| CN202952407U (en) * | 2012-12-05 | 2013-05-29 | 英利能源（中国）有限公司 | Silicon block cutting and fixing structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS61276344A (en) * | 1985-05-31 | 1986-12-06 | Toshiba Corp | Dicing tape |
| JP2010097976A (en) * | 2008-10-14 | 2010-04-30 | Katsuyo Tawara | Method of cutting out silicon block |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951381A (en) * | 1988-10-03 | 1990-08-28 | Alps Electric Co., Ltd. | Method of manufacturing a magnetic head slider |
| CN201970408U (en) * | 2010-11-25 | 2011-09-14 | 浙江昱辉阳光能源有限公司 | Cutting clamp for crystal silicon block |
| CN102514109A (en) * | 2011-12-30 | 2012-06-27 | 上海硅酸盐研究所中试基地 | Fixed and aligned cutting method of silicon carbide crystal |
| CN202556603U (en) * | 2012-05-23 | 2012-11-28 | 浙江锦锋光伏科技有限公司 | To-be-cut silicon bar |
| CN102744799A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Crystal bar bonding method |
| CN202952407U (en) * | 2012-12-05 | 2013-05-29 | 英利能源（中国）有限公司 | Silicon block cutting and fixing structure |
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