CN110341061A - A kind of cutting method and application of single crystal seed - Google Patents

A kind of cutting method and application of single crystal seed Download PDF

Info

Publication number
CN110341061A
CN110341061A CN201910722774.8A CN201910722774A CN110341061A CN 110341061 A CN110341061 A CN 110341061A CN 201910722774 A CN201910722774 A CN 201910722774A CN 110341061 A CN110341061 A CN 110341061A
Authority
CN
China
Prior art keywords
cutting
monocrystal rod
cutting pattern
monocrystal
graphics template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910722774.8A
Other languages
Chinese (zh)
Inventor
胡润光
何亮
李建敏
付志斌
邹贵付
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saiwei Ldk Solar Energy High Technology (xinyu) Co Ltd
LDK Solar Co Ltd
Original Assignee
Saiwei Ldk Solar Energy High Technology (xinyu) Co Ltd
LDK Solar Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saiwei Ldk Solar Energy High Technology (xinyu) Co Ltd, LDK Solar Co Ltd filed Critical Saiwei Ldk Solar Energy High Technology (xinyu) Co Ltd
Priority to CN201910722774.8A priority Critical patent/CN110341061A/en
Publication of CN110341061A publication Critical patent/CN110341061A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

Abstract

The present invention provides a kind of cutting methods of single crystal seed, the following steps are included: preparation or offer monocrystal rod, four crest lines of face two-by-two are provided on the periphery wall of the monocrystal rod along its length, the crest line is formed with datum mark on the end face of the monocrystal rod;Graphics template is made, the graphics template is equipped with cutting pattern and positioning identifier, then the graphics template is pasted on a side end face of the monocrystal rod, wherein the positioning identifier and the benchmark point alignment;The two neighboring datum mark forms a reference line, and the straight line and the reference line where at least one side of the cutting pattern are equipped with the predetermined angle of acute angle size;The graphics template is cut, and retains the cutting pattern on the end surface, then the monocrystal rod is fixed in crystal holder, the edge along the cutting pattern after then cutting by preset thickness, obtains single crystal seed to the monocrystal rod evolution.The present invention also provides the applications of the single crystal seed.

Description

A kind of cutting method and application of single crystal seed
Technical field
The present invention relates to photovoltaic silicon wafer production technical fields, and in particular to a kind of cutting method and application of single crystal seed.
Background technique
In photovoltaic industry, most enterprises have been typically chosen seed crystal ingot casting technology production silicon ingot, by crucible bottom It is laid with seed crystal to be pulled crystal, advantageously reduces silicon ingot crystal dislocation, promote Ingot quality and production efficiency.Wherein, monocrystalline silicon or It is higher to the crystal orientation requirement of seed crystal during the ingot casting of quasi-monocrystalline silicon, it needs to select specific direction pair according to the case where crystal Monocrystal rod is cut, to obtain the single crystal seed for meeting crystal orientation angle requirement.However, the cutting side of existing single crystal seed In method, process is tedious, cost is also higher, and there are crystal orientation deviations to be difficult to control for major part, and deviation is big, cutting profile low precision, Cut the problems such as yield rate is low.
Summary of the invention
In view of this, the present invention provides a kind of cutting method of single crystal seed and application, the cutting of the single crystal seed Method is easy to operate, at low cost, and work efficiency is high, can greatly improve the accuracy of evolution angle.
In a first aspect, the present invention provides a kind of cutting methods of single crystal seed, comprising the following steps:
Preparation provides monocrystal rod, is provided with four of face two-by-two on the periphery wall of the monocrystal rod along its length Crest line, the crest line are formed with datum mark on the end face of the monocrystal rod;
Graphics template is made, the graphics template is equipped with cutting pattern and positioning identifier, then by the graphics template It is pasted on a side end face of the monocrystal rod, wherein the positioning identifier and the benchmark point alignment;The two neighboring base A reference line is formed on schedule, and the straight line and the reference line where at least one side of the cutting pattern are equipped with acute angle size Predetermined angle;
The graphics template is cut, and retains the cutting pattern on the end surface, then fixes the monocrystal rod In crystal holder, the edge along the cutting pattern after then cutting by preset thickness, obtains monocrystalline to the monocrystal rod evolution Seed crystal.
In the present invention, four crest lines of the monocrystal rod are the growth crest line of monocrystal rod.
Optionally, the manufacturing process of the graphics template specifically includes: by computer graphics tool, first drawing one just Rectangular, the diagonal line for extending the square obtains positioning identifier;Then centered on cornerwise intersection point, by described pre- If angle clockwise or counterclockwise, then adjusts the length and width dimensions of the square to the square, cutting drawing is formed After case, is printed by actual size, obtain graphics template.
In the present invention, the graphics template is customized according to actual size, predefines the positioning mark in graphics template The size of pattern is known and cuts, after then drawing by computer graphics tools such as CAD by actual size, by the practical ruler of 1:1 The printing of little progress row.
In the present invention, due to the square two diagonal lines altogether containing four port, the diagonal line is prolonged respectively When long, four elongated segment leads are formed;The positioning identifier is made of the four elongated segments lead;And the four elongated segments lead point Four ports of the positioning identifier are not corresponded to.It is described when the graphics template being pasted on the end face of the monocrystal rod Four ports of positioning identifier are aligned or are overlapped one by one with the datum mark.
When preferentially, on the end face that the graphics template is pasted onto the monocrystal rod, the four of the positioning identifier A port is overlapped with the datum mark.
In the present invention, the monocrystal rod be can be, but not limited to as cylindrical silicon single crystal rod;The shape of the monocrystalline plane rod end Shape can be, but not limited to as circle.
Optionally, the predetermined angle includes 0.5-60 °.
Optionally, the predetermined angle includes 1-45 °.
Further, optionally, the predetermined angle can be adjusted according to the demand of actual production;For example, described Predetermined angle can be 0.5 °, 1 °, 2 °, 3 °, 5 °, 10 °, 15 °, 20 °, 30 °, 35 °, 40 °, 45 °, 50 ° or 60 °.Institute of the present invention Predetermined angle is stated, the needs for meeting a variety of crystal orientation angle cuttings may be implemented.Predetermined angle of the present invention be for perpendicular to The angle changing of the crystal orientation of the monocrystalline plane rod end.
In the present invention, by being rotated both clockwise and counterclockwise, it can be achieved that the variation of predetermined angle on a large scale, meets practical To the requirement of the larger change range of angle in production process.
Optionally, the material of the graphics template includes plastics or papery.For example, can be, but not limited to as transparent plastic paper Or different blank sheet of paper.In the present invention, the graphics template shape of design can be printed upon in corresponding material by printing device, be obtained Graphics template.
Optionally, the graphics template is pasted onto a side end face of the monocrystal rod by viscous glutinous agent.Optionally, described Viscous glutinous agent includes AB glue.
In the present invention, the size of the graphics template is less than the size of the end face of the monocrystal rod.The cutting pattern Size is similarly less than the size of the end face of the monocrystal rod.Before cut to monocrystal rod, in advance to monocrystal rod Face size is measured, to accurately design and produce graphics template.
Optionally, the shape of the cutting pattern includes square or rectangular.
Preferably, the shape of the cutting pattern includes square.
Optionally, it is described by the monocrystal rod be fixed on the process in crystal holder include: will retain it is described cutting pattern it is more A monocrystal rod is regularly arranged in the crystal holder, wherein in the adjacent monocrystal rod, two sides of the cutting pattern Place in the same horizontal line, is then fixed the monocrystal rod.
Optionally, in the adjacent monocrystal rod, the method for two side edges of the cutting pattern in the same horizontal line It include: to be fixed on one end of a filament on the end face of one monocrystal rod, then along the cutting drawing in the monocrystal rod One side of case extends, and makes the same side of the cutting pattern on the adjacent monocrystalline plane rod end and the filament It is overlapped, is then fixed on the other end of the filament on the end face of the adjacent monocrystal rod.
Optionally, will retain it is described cutting pattern multiple monocrystal rod matrix arrangements in the crystal holder, production or Using grid lines excavation machine, evolution is synchronized to the monocrystal rod of matrix arrangement.By to multiple matrix arrangements Monocrystal rod is synchronous to carry out evolution, can greatly promote cutting efficiency, further decrease production cost.
Optionally, the crystal holder is properly termed as metal tray, work plate etc..It can be between the monocrystal rod and the crystal holder But it is not limited by the second viscous glutinous agent to fix.Optionally, the described second viscous glutinous agent includes hot melt adhesive or foamed glue.The foamed glue Slow fixation may be implemented, by the way that first the second viscous glutinous agent is coated in monocrystal rod or in crystal holder, then further described in adjusting The position of monocrystal rod makes the alignment of the cutting pattern on the two neighboring monocrystalline plane rod end, at this point, the foamed glue can It is completely fixed with realizing;It then, can be successively regularly arranged by multiple monocrystal rods according to same operation.
In the present invention, the mechanical device single using expensive and cutting crystal orientation angle and shape compared to tradition, In the cutting method of single crystal seed of the present invention, equipment price is cheap, the simpler convenience of cutting step;And institute of the present invention The angular deviation for stating method evolution is small, greatly improves single crystal seed angle precision, provides quality assurance to class monocrystalline industrialization.
Second aspect, the present invention also provides the monocrystalline that cutting method described according to a first aspect of the present invention in one obtains Application of the seed crystal in silicon ingot ingot casting field.
For example, the crystal orientation angle for the single crystal seed that cutting method described in first aspect of the present invention obtains is accurate, partially Difference is small, and the crystal orientation angle and cross sectional shape of single crystal seed can be adjusted according to actual needs.It is obtained by the cutting method To single crystal seed can be very good the preparation applied to monocrystal silicon, and the crystal dislocation that can substantially improve monocrystal silicon is existing As promoting the volume recovery and quality of monocrystal silicon.The monocrystal silicon can also improve the performance of photovoltaic cell to a certain extent.
The beneficial effect comprise that
(1) cutting method of single crystal seed provided by the invention, operating process is simple and convenient, makes graphics template, can be with The single crystal seed of different crystal orientations angle and correspondingly-shaped is prepared based on actual production demand, is set without the cutting of complex and expensive Standby, crystal orientation angular deviation is small, cuts high yield rate, substantially reduces the cost of entire technique.
(2) the crystal orientation angle of single crystal seed made from the cutting method of single crystal seed provided by the invention is accurate, and deviation is small, And the crystal orientation angle and cross sectional shape of single crystal seed can be adjusted according to actual needs;It participates in preparing by the single crystal seed Silicon silicon wafer yields greatly improve.
Advantages of the present invention will be illustrated partially in the following description, and a part is apparent according to specification , or can implementation through the embodiment of the present invention and know.
Detailed description of the invention
Fig. 1 is the process flow chart of the cutting method for the single crystal seed that one embodiment of the invention provides;
Fig. 2 is the structural schematic diagram of the cutting for the single crystal seed that one embodiment of the invention provides;
Fig. 3 is a production schematic diagram of the graphics template that one embodiment of the invention provides;
Fig. 4 is another production schematic diagram for the graphics template that one embodiment of the invention provides;
Fig. 5 is another production schematic diagram for the graphics template that one embodiment of the invention provides;
Fig. 6 is another production schematic diagram for the graphics template that one embodiment of the invention provides;
Fig. 7 is another production schematic diagram for the graphics template that one embodiment of the invention provides;
Fig. 8 is the structural schematic diagram of the regular array for the single crystal seed that one embodiment of the invention provides;
Fig. 9 is that the structure of the grid excavation machine cutting line for the cutting for single crystal seed that one embodiment of the invention provides is shown It is intended to.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below with reference to Attached drawing and preferred embodiment, invention is further described in detail.It should be appreciated that specific embodiment described herein is only used To explain the present invention, it is not used in the restriction present invention.
Please also refer to attached drawing 1, the present invention provides a kind of cutting methods of single crystal seed, comprising the following steps:
S01, preparation provide monocrystal rod, are provided with face two-by-two on the periphery wall of the monocrystal rod along its length Four crest lines, the crest line are formed with datum mark on the end face of the monocrystal rod;
S02, production graphics template, the graphics template is equipped with cutting pattern and positioning identifier, then by the figure Template is pasted on a side end face of the monocrystal rod, wherein the positioning identifier and the benchmark point alignment;Two neighboring institute It states datum mark and forms a reference line, the straight line and the reference line where at least one side of the cutting pattern are equipped with acute angle The predetermined angle of size;
S03, the graphics template is cut, and retains the cutting pattern on the end surface, then by the monocrystal rod It is fixed in crystal holder, the edge along the cutting pattern after then cutting by preset thickness, obtains the monocrystal rod evolution Single crystal seed.
Specifically, referring to fig. 2, graphics template 20 is pasted on the end face 11 of the monocrystal rod 10, the monocrystal rod 10 Four crest lines 12 of face two-by-two are provided on periphery wall along its length;The crest line 12 is in the end face of the monocrystal rod 10 Datum mark 13 is formed on 11;Contain cutting pattern 21 and positioning identifier 22, the positioning identifier 22 in the graphics template 20 It is aligned with four crest lines 12 of the monocrystal rod 10.The two neighboring datum mark 13 forms a reference line 14, the cutting drawing The extended line of one side of case and the reference line 14 are equipped with the predetermined angle α of acute angle size.
In the present invention, another side of the cutting pattern and the angle of the reference line can also be the preset angle Spend the complementary angles of α.
In embodiment of the present invention, together referring to Fig. 3-Fig. 6, the manufacturing process of the graphics template 20 is specifically included: logical Computer graphics tool is crossed, a square 23 is first drawn, the diagonal line 24 for extending the square obtains positioning identifier 22, so Afterwards centered on the intersection point of the diagonal line 24, by predetermined angle α to described square 23 clockwise or counterclockwise;Then Square 23 length and width dimensions are adjusted, cutting pattern 21 is formed.
In embodiment of the present invention, when extending the square diagonal line 24, to described square 23 clockwise or inverse times After needle rotates predetermined angle α, diagonal line 24 can be deleted, retains prolongation, i.e. positioning identifier 22, or the fine tuning positioning mark The length for knowing 22, can be aligned or be overlapped with the datum mark 13 to meet it.
Further, it after to described square 23 clockwise or counterclockwise predetermined angle α, can also adjust described The length and width dimensions of square 23, form it into the cutting pattern 21 ' of rectangle or other shapes, together referring to fig. 4 and Fig. 7.
It, can be to the figure when the graphics template 20 is securely pasted onto monocrystal rod 10 in embodiment of the present invention Shape template 20 is cut, and the cutting pattern 21 is only retained.Wherein, 20 energy of graphics template should be kept as far as possible in paste process It crosses on the end face 11 for being laid in the monocrystal rod 10.
In embodiment of the present invention, multiple monocrystal rods can be subjected to evolution simultaneously, by the way that institute will be retained on multiple end faces The monocrystal rod for stating cutting pattern is regularly arranged in the crystal holder, then makes the institute on the two neighboring monocrystalline plane rod end Then the two sides alignment for stating cutting pattern carries out evolution operation simultaneously referring to Fig. 8.It can greatly improve by this way The producing efficiency of the single crystal seed.
It, can also be by making or using grid lines in the cutting method of the single crystal seed in embodiment of the present invention Excavation machine participates in Fig. 9, to the monocrystal rod of matrix arrangement, while carrying out evolution operation.Wherein, the grid lines excavation machine The length and width dimensions of each grid 31 in 30 can be adjusted according to actual demand.
In embodiment of the present invention, the grid lines excavation machine 30 can be prepared, and can also be changed by the prior art Into obtaining.Multiple monocrystal rods that the grid lines excavation machine 30 can arrange to matrix are cut simultaneously, can further be mentioned Rise the cutting efficiency of the cutting method.
It, can be to the progress of 4 × 4,2 × 2 or 3 × 3 consistent monocrystal rod battle array of height in the embodiment of the invention Synchronous evolution operation.Further, implementing monocrystal rod can be according to the array arrangement of M × N, wherein M is greater than or equal to N, M, N For the positive integer of 2-10.
When multiple monocrystal rods are cut simultaneously, described be derived to a monocrystal rod is made with a batch of generate, The crystal orientation angle between a monocrystal rod and height dimension are as all theory tends to.Therefore, at the same to multiple monocrystal rods into When row cutting, cutting efficiency can be greatly promoted, production cost is further decreased under the premise of meeting single crystal seed quality.
In embodiment of the present invention, when the height of the monocrystal rod is higher, the cutting method through the single crystal seed is cut After cutting, the single crystal seed of prism-shaped can be obtained, then can further the single crystal seed to the prism-shaped in its length side To being cut, to obtain the single crystal seed block of height (or thickness) composite demand.
The cutting method of single crystal seed provided by the invention, operating process is simple and convenient, can be based on actual production demand The single crystal seed of different crystal orientations angle is prepared, without the cutting equipment of complex and expensive, crystal orientation angular deviation is small, cuts finished product Rate is high, and the cost of entire technique is low.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.

Claims (10)

1. a kind of cutting method of single crystal seed, which comprises the following steps:
Preparation provides monocrystal rod, is provided with four ribs of face two-by-two on the periphery wall of the monocrystal rod along its length Line, the crest line are formed with datum mark on the end face of the monocrystal rod;
Graphics template is made, the graphics template is equipped with cutting pattern and positioning identifier, then pastes the graphics template On a side end face of the monocrystal rod, wherein the positioning identifier and the benchmark point alignment;The two neighboring datum mark A reference line is formed, the straight line where at least one side of the cutting pattern is equipped with the pre- of acute angle size with the reference line If angle;
The graphics template is cut, and retains the cutting pattern on the end surface, the monocrystal rod is then fixed on crystalline substance In support, the edge along the cutting pattern after then cutting by preset thickness, obtains single crystal seed to the monocrystal rod evolution.
2. cutting method according to claim 1, which is characterized in that the manufacturing process of the graphics template specifically includes: By computer graphics tool, a square is first drawn, the diagonal line for extending the square obtains positioning identifier;Then with Centered on cornerwise intersection point, by the predetermined angle to it is described square clockwise or counterclockwise, then adjust The length and width dimensions of the square are printed by actual size after forming cutting pattern, obtain graphics template.
3. cutting method according to claim 1 or 2, which is characterized in that the predetermined angle includes 0.5-60 °.
4. cutting method according to claim 1 or 2, which is characterized in that the material of the graphics template include plastics or Papery.
5. cutting method according to claim 1, which is characterized in that the graphics template is pasted onto institute by viscous glutinous agent State a side end face of monocrystal rod.
6. cutting method according to claim 1, which is characterized in that the shape of the cutting pattern includes square or length It is rectangular.
7. manufacturing method according to claim 1, which is characterized in that the mistake being fixed on the monocrystal rod in crystal holder Journey include: will retain it is described cutting pattern multiple monocrystal rods it is regularly arranged in the crystal holder, wherein the adjacent list In crystal bar, two side edges of the cutting pattern in the same horizontal line, are then fixed the monocrystal rod.
8. production method according to claim 7, which is characterized in that make in the adjacent monocrystal rod, the cutting pattern Two side edges method in the same horizontal line include: that one end of a filament is fixed on to the end face of a monocrystal rod On, extend then along a side of the cutting pattern in the monocrystal rod, makes on the adjacent monocrystalline plane rod end The same side of the cutting pattern is overlapped with the filament, then the other end of the filament is fixed on to the adjacent list On the end face of crystal bar.
9. production method according to claim 7, which is characterized in that multiple monocrystalline of the cutting pattern will be retained Stick matrix arrangement is in the crystal holder, production or the monocrystal rod progress using grid lines excavation machine, to matrix arrangement Synchronous evolution.
10. single crystal seed the answering in silicon ingot ingot casting field that cutting method described in -9 any one obtains according to claim 1 With.
CN201910722774.8A 2019-08-06 2019-08-06 A kind of cutting method and application of single crystal seed Pending CN110341061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910722774.8A CN110341061A (en) 2019-08-06 2019-08-06 A kind of cutting method and application of single crystal seed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910722774.8A CN110341061A (en) 2019-08-06 2019-08-06 A kind of cutting method and application of single crystal seed

Publications (1)

Publication Number Publication Date
CN110341061A true CN110341061A (en) 2019-10-18

Family

ID=68184080

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910722774.8A Pending CN110341061A (en) 2019-08-06 2019-08-06 A kind of cutting method and application of single crystal seed

Country Status (1)

Country Link
CN (1) CN110341061A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111267248A (en) * 2020-03-12 2020-06-12 常州时创能源股份有限公司 Preparation method of non-100 crystal orientation monocrystalline silicon wafer
CN114179235A (en) * 2021-12-20 2022-03-15 常州时创能源股份有限公司 Preparation process of <110> monotectic silicon wafer
CN114193640A (en) * 2021-12-20 2022-03-18 常州时创能源股份有限公司 Preparation method of <100> monotectic silicon wafer
CN114248355A (en) * 2021-12-15 2022-03-29 江西新余新材料科技研究院 Method for judging lateral crystal orientation deflection angle of monocrystalline silicon piece

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4029974A1 (en) * 1990-09-21 1992-03-26 Siemens Ag Piezoelectric elements are cut from wafer - by using diamond coated saw and sawing through wafer thickness in 3 patterns of parallel lines to give regular hexagonal elements
US5893308A (en) * 1994-05-19 1999-04-13 Tokyo Seimitsu Co., Ltd. Method of positioning work piece and system therefor
CN103952754A (en) * 2014-04-21 2014-07-30 江西赛维Ldk太阳能高科技有限公司 Monocrystal-like silicon ingot preparation method and methods for preparing monocrystal-like silicon wafers by cutting monocrystal-like silicon ingot
CN207351335U (en) * 2017-09-19 2018-05-11 晶科能源有限公司 A kind of device of definite monocrystalline pole cut point
CN109760219A (en) * 2019-03-12 2019-05-17 赛维Ldk太阳能高科技(新余)有限公司 A kind of silico briquette head-tail minimizing technology and removal device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4029974A1 (en) * 1990-09-21 1992-03-26 Siemens Ag Piezoelectric elements are cut from wafer - by using diamond coated saw and sawing through wafer thickness in 3 patterns of parallel lines to give regular hexagonal elements
US5893308A (en) * 1994-05-19 1999-04-13 Tokyo Seimitsu Co., Ltd. Method of positioning work piece and system therefor
CN103952754A (en) * 2014-04-21 2014-07-30 江西赛维Ldk太阳能高科技有限公司 Monocrystal-like silicon ingot preparation method and methods for preparing monocrystal-like silicon wafers by cutting monocrystal-like silicon ingot
CN207351335U (en) * 2017-09-19 2018-05-11 晶科能源有限公司 A kind of device of definite monocrystalline pole cut point
CN109760219A (en) * 2019-03-12 2019-05-17 赛维Ldk太阳能高科技(新余)有限公司 A kind of silico briquette head-tail minimizing technology and removal device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111267248A (en) * 2020-03-12 2020-06-12 常州时创能源股份有限公司 Preparation method of non-100 crystal orientation monocrystalline silicon wafer
CN114248355A (en) * 2021-12-15 2022-03-29 江西新余新材料科技研究院 Method for judging lateral crystal orientation deflection angle of monocrystalline silicon piece
CN114179235A (en) * 2021-12-20 2022-03-15 常州时创能源股份有限公司 Preparation process of <110> monotectic silicon wafer
CN114193640A (en) * 2021-12-20 2022-03-18 常州时创能源股份有限公司 Preparation method of <100> monotectic silicon wafer

Similar Documents

Publication Publication Date Title
CN110341061A (en) A kind of cutting method and application of single crystal seed
CN106808681B (en) A method of improving increasing material manufacturing element precision
KR102583010B1 (en) Manufacturing method and application of single crystal silicon wafer
CN111361027B (en) Silicon rod cutting process
US10131999B2 (en) Method for producing a silicon ingot having symmetrical grain boundaries
CN111251483A (en) Silicon rod cutting method
US20230361238A1 (en) Method for manufacturing monocrystalline silicon wafer containing arced side, method for manufacturing monocrystalline silicon cell, and photovoltaic module
CN211334094U (en) Jig for cutting and positioning silicon single crystal rod
CN1201915C (en) Method for accurate-oriented cutting crystals
CN107268069A (en) Method for laying seed crystal and method for producing pseudo-single crystal ingot
US20150308011A1 (en) Methods for producing rectangular seeds for ingot growth
CN112144103B (en) Preparation method of cast single crystal seed crystal
WO2021180248A1 (en) Preparation method for single crystal silicon wafer having non-100 crystal orientation
JP2013258243A (en) Manufacturing method and manufacturing device of compound semiconductor substrate
CN114193640A (en) Preparation method of &lt;100&gt; monotectic silicon wafer
CN111485287A (en) Method for recycling monocrystalline silicon seed crystal, cast monocrystalline silicon piece and preparation method thereof
CN113787638B (en) Crystal bar processing method for determining three-dimensional space relation of crystal bar
US6929693B2 (en) Single crystals, method for making single crystals by growth in solution and uses
CN114619578A (en) Silicon rod processing method, silicon wafer, battery and battery assembly
US20140137395A1 (en) Systems and Methods for Producing Seed Bricks
CN110216510A (en) A kind of processing method of the micro structure array based on on-line measurement
CN101924013B (en) Method for increasing photo-etching alignment precision after extension
CN103537794B (en) Sample does the method that one-dimensional precise translation realizes two-dimensional laser SLS crystallization
CN111002494B (en) Orientation method and device for sapphire ingot processing by heat exchange method
CN211339734U (en) Seed crystal layer structure for crystalline silicon ingot

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191018

RJ01 Rejection of invention patent application after publication