CN205011860U - A ceramic crucible for polycrystal ingot casting - Google Patents
A ceramic crucible for polycrystal ingot casting Download PDFInfo
- Publication number
- CN205011860U CN205011860U CN201520685126.7U CN201520685126U CN205011860U CN 205011860 U CN205011860 U CN 205011860U CN 201520685126 U CN201520685126 U CN 201520685126U CN 205011860 U CN205011860 U CN 205011860U
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- silicon
- crucible
- lateral wall
- grain
- ceramic crucible
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Abstract
The utility model relates to a ceramic crucible for polycrystal ingot casting, including the bottom of a boiler and lateral wall, it has the one deck grained layer evenly to inlay on the upper surface in the bottom of a boiler and the internal surface of lateral wall, and the grained layer includes the compound granule of a plurality of silicon grain or silicon. The utility model discloses an inlay the one deck grained layer on the bottom of a boiler of crucible and lateral wall, the grained layer is the compound granule of a plurality of silicon grain or silicon, consequently can be to the appearance channeling conduct of silicon crystal in the bottom of a boiler, and the lateral wall also can guide the growth of crystalline grain simultaneously for the crystalline grain of transversely producing from the crucible lateral wall possess lower defect density, reduces the disorder of lateral wall grain shape, and obtains more high -quality polycrystalline silicon ingot, improves the efficiency that the battery was made to the silicon bulk periphery.
Description
Technical field
The utility model relates to a kind of ceramic crucible, particularly a kind of ceramic crucible for polycrystalline cast ingot.
Background technology
The continuous exhaustion of Nonrenewable energy resources makes renewable energy source be paid close attention to widely, especially receives publicity especially with sun power, and the utilization of sun power becomes the main force of renewable resources utilization.
The method of current polycrystalline cast ingot technology many employings directional solidification growth, in order to obtain the silicon ingot of low defect, many employings are along the columnar crystal structure of direction of growth proper alignment, at the initial stage that ingot casting grows in order to reduce the distribution of defect, use and reduce the mode that grain size increases the length of crystal boundary, stress relief enters crystal boundary and reduces the generation of defect, reach the later stage improve make after battery efficiency.
Certain effect can be obtained by increasing little granular layer in crucible bottom, but at present due to the impact by thermal field factor, in process of growth, the temperature of crucible wall declines very fast, the silicon liquid of melting starts forming core at crucible wall and occurs the crystal grain of transverse growth thus, by can reduce the phenomena process laterally generating crystal grain to the optimization of thermal field, but crucible wall transverse growth crystal grain cannot be avoided completely.
Summary of the invention
Technical problem to be solved in the utility model is for the deficiencies in the prior art, provide a kind of rational in infrastructure, can reduce by the ceramic crucible for polycrystalline cast ingot of the defect of sidewall transverse growth.
Technical problem to be solved in the utility model is realized by following technical scheme; the utility model is a kind of ceramic crucible for polycrystalline cast ingot; be characterized in: comprise the bottom of a pan and sidewall; the upper surface in the described the bottom of a pan and the internal surface of sidewall are evenly inlaid with one deck granular layer, and granular layer comprises the compound particle of several silicon grains or silicon.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described in the ceramic crucible of polycrystalline cast ingot: the wall thickness of described sidewall increases 5-8mm from top to bottom gradually.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described in the ceramic crucible of polycrystalline cast ingot: the purity of the compound particle of described silicon grain or silicon is greater than 4N.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described in the ceramic crucible of polycrystalline cast ingot: the thickness of described granular layer is 0.1-3mm.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described in the ceramic crucible of polycrystalline cast ingot: the particle diameter of the compound particle of described silicon grain or silicon is 60 μm ~ 2mm.
Compared with prior art; the utility model by inlaying one deck granular layer on the bottom of a pan and sidewall of crucible; granular layer is the compound particle of several silicon grains or silicon; therefore can guide the pattern of silicon crystal in the bottom of a pan; sidewall also can guide the growth of crystal grain simultaneously; the crystal grain laterally produced from crucible wall is made to have lower defect concentration; reduce the disorder of sidewall grain shape; and obtain the polycrystal silicon ingot of the high-quality of more high-quality, improve the efficiency that silicon ingot peripheral portion makes battery.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present utility model.
Embodiment
Referring to accompanying drawing, further describe concrete technical scheme of the present utility model, so that those skilled in the art understands the present invention further, and do not form the restriction to its right.
Embodiment 1, with reference to Fig. 1, a kind of ceramic crucible for polycrystalline cast ingot, comprises the bottom of a pan 3 and sidewall 1, and the upper surface in the described the bottom of a pan 3 and the internal surface of sidewall 1 are evenly inlaid with one deck granular layer 2, and granular layer 2 comprises the compound particle of several silicon grains or silicon.The wall thickness of described sidewall 1 increases 5-8mm from top to bottom gradually.The purity of the compound particle of described silicon grain or silicon is greater than 4N.The thickness of described granular layer 2 is 0.1-3mm.The particle diameter of the compound particle of described silicon grain or silicon is 60 μm ~ 2mm.
Embodiment 2, a kind of ceramic crucible for polycrystalline cast ingot, after ceramic crucible idiosome carries out high temperature sintering, make finished product, size is selected to be the silicon-carbide particle of 100 μm, the purity of silicon-carbide particle is 6N, by using vitrified bond, the silicon-carbide particle selected above is brushed uniformly on sidewall 1 internal surface of crucible and the upper surface in the bottom of a pan 3, granular layer 2 comparatively crucible plane protrudes 2mm, treat that silicon-carbide particle is firmly bonded on crucible wall 1 and the bottom of a pan 3, form granular layer 2, use after above crucible is sprayed normally.Sidewall 1 and the bottom of a pan 3 granular layer can growths preferentially, make sidewall 1 and the bottom of a pan 3 preferred growth crystal grain out have lower defect concentration, improve silicon chip quality.
Embodiment 3, a kind of ceramic crucible for polycrystalline cast ingot, not yet sinter at ceramic crucible idiosome, before making finished product, size is selected to be the silica dioxide granule of 80 μm, the purity of silicon-dioxide is 7N, the silica dioxide granule selected above is brushed uniformly on the internal surface of the sidewall 1 of crucible idiosome and on the upper surface in the bottom of a pan 3, granular layer 2 comparatively crucible plane protrudes 1.5mm, treat that silica dioxide granule is firmly pasted onto on crucible wall 1 and the bottom of a pan 3, above crucible is being carried out sinter molding, granular layer 2 is formed at sidewall 1 and the bottom of a pan 3, crucible after shaping carries out normal spraying coating process and uses.The granular layer 2 in sidewall 1 and the bottom of a pan 3 can growth preferentially, makes sidewall 1 and the bottom of a pan 3 preferred growth crystal grain out have lower defect concentration, improves silicon chip quality.
Embodiment 4, a kind of ceramic crucible for polycrystalline cast ingot, after ceramic crucible idiosome carries out high temperature sintering, make finished product, select size to be the silicon grain of 70 μm, the purity of silicon grain is 5N, by using binding agent, brushed by the silicon grain selected above on the internal surface of the sidewall 1 of crucible and on the upper surface in the bottom of a pan 3 uniformly, granular layer 2 comparatively crucible plane protrudes 3mm, treat that silicon grain is firmly pasted onto on ceramic crucible sidewall 1 and the bottom of a pan 3, form granular layer 2 at sidewall 1 and the bottom of a pan 3.Use after above crucible is carried out normal spraying coating process.Sidewall 1 and the bottom of a pan 3 granular layer 2 can growths preferentially, make sidewall 1 and the bottom of a pan 3 preferred growth crystal grain out have lower defect concentration, improve silicon chip quality.
Claims (4)
1. the ceramic crucible for polycrystalline cast ingot; it is characterized in that: comprise the bottom of a pan and sidewall; the upper surface in the described the bottom of a pan and the internal surface of sidewall are evenly inlaid with one deck granular layer; granular layer comprises the compound particle of several silicon grains or silicon, and the wall thickness of described sidewall increases 5-8mm from top to bottom gradually.
2. the ceramic crucible for polycrystalline cast ingot according to claim 1, is characterized in that: the purity of the compound particle of described silicon grain or silicon is greater than 4N.
3. the ceramic crucible for polycrystalline cast ingot according to claim 1, is characterized in that: the thickness of described granular layer is 0.1-3mm.
4. the ceramic crucible for polycrystalline cast ingot according to claim 1, is characterized in that: the particle diameter of the compound particle of described silicon grain or silicon is 60 μm ~ 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520685126.7U CN205011860U (en) | 2015-09-07 | 2015-09-07 | A ceramic crucible for polycrystal ingot casting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520685126.7U CN205011860U (en) | 2015-09-07 | 2015-09-07 | A ceramic crucible for polycrystal ingot casting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205011860U true CN205011860U (en) | 2016-02-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520685126.7U Expired - Fee Related CN205011860U (en) | 2015-09-07 | 2015-09-07 | A ceramic crucible for polycrystal ingot casting |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205011860U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| CN107699946A (en) * | 2017-11-20 | 2018-02-16 | 江苏高照新能源发展有限公司 | A kind of polycrystalline cast ingot feature G8 silica crucibles and preparation method thereof |
-
2015
- 2015-09-07 CN CN201520685126.7U patent/CN205011860U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| CN107699946A (en) * | 2017-11-20 | 2018-02-16 | 江苏高照新能源发展有限公司 | A kind of polycrystalline cast ingot feature G8 silica crucibles and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20190907 |
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| CF01 | Termination of patent right due to non-payment of annual fee |