CN201971923U - Crucible platform of polycrystalline silicon ingot furnace - Google Patents
Crucible platform of polycrystalline silicon ingot furnace Download PDFInfo
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- CN201971923U CN201971923U CN2010206194313U CN201020619431U CN201971923U CN 201971923 U CN201971923 U CN 201971923U CN 2010206194313 U CN2010206194313 U CN 2010206194313U CN 201020619431 U CN201020619431 U CN 201020619431U CN 201971923 U CN201971923 U CN 201971923U
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- crucible
- platform
- crucible platform
- bowl configurations
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Abstract
The utility model discloses a crucible platform of a polycrystalline silicon ingot furnace. The bottom of the crucible platform is a concave pit structure; the concave pit structure is spherical-crown-shaped, and the front section view of the concave pit structure along the center is circular-arc-shaped; or the concave pit structure is a concave pit with a spherical crown profile consisting of discretized steps, and the front section view of the concave pit structure along the center is a curve with a circular-arc-shaped profile consisting of the discretized steps; and due to the arrangement of the concave pit structure, the thickness of the crucible platform increases gradually from the center of the concave pit structure to the edge of the concave pit structure. Due to the adoption of the crucible platform, the condition of unbalance between the central temperature and the peripheral temperature of the crucible platform can be effectively restrained, the temperature error between the edge and the center of the crucible platform can be kept within 2 DEG C in an entire crystal growing process, an equivalent surface at the bottom of a crucible is a plane, a solid-liquid interface can be effectively kept horizontal during crystal growing, and vertically growing columnar crystals can be formed during polycrystalline ingot casting.
Description
Technical field
The utility model relates to metallurgy method solar-grade polysilicon preparing technical field, particularly a kind of crucible platform of polycrystalline silicon ingot or purifying furnace.
Background technology
Along with petering out of the energy, the application prospect of photovoltaic generation is more and more wide.And in the photovoltaic application, polycrystal silicon cell has progressively replaced monocrystalline silicon battery, becomes the main flow of photovoltaic cell.Polycrystal silicon cell is that the silicon raw material is carried out ingot casting earlier, and then butt and microsection manufacture.The polycrystalline silicon ingot casting process is very important to the influence of polysilicon electric property.
In the crystallisation process of polysilicon, owing to will reduce dislocation and impurity as far as possible, therefore wish that crystal grain is the bigger the better, preferably grow up to the thick column crystal of crystal grain, this crystallization requirement with the common metal structured material is just the opposite.Because the PN junction of solar battery sheet preferably along [111] crystal orientation, therefore, wishes that column crystal is vertical more good more.For this reason, ingot casting process and the technology to polysilicon has proposed corresponding requirement.
The ingot casting process of polycrystalline silicon used for solar battery is as follows, the silicon material is put into crucible melts, under liquid state the insulation for some time after, manage to make crucible bottom at first to cool off, after reaching the fusing point of silicon, silicon melt begins crystallization, and forms the solid-liquid interface of level near crucible bottom.Cooling is continued in the bottom then, move on the solid-liquid interface, on the speed of moving be the speed of growth of silicon crystal, when solid-liquid interface moves on to silicon liquid top, the just whole crystallizations of the silicon liquid in the whole crucible finish like this.Therefore, the ingot casting process reality of polycrystalline silicon used for solar battery also is the process of a directional freeze.
Guarantee the vertical of the column pattern of polysilicon grain and the direction of growth, promptly must keep the level of solid-liquid interface.If solid-liquid interface can not keep horizontality, then the crystalline lateral growth must appear.In the promptly existing polycrystalline silicon ingot or purifying furnace of existing unmelted polycrystalline silicon directional solidification furnace (DSS), normally adopt crucible to descend or mode that thermal insulator rises realizes being lowered the temperature gradually by bottom to top, such structure, heating member must be placed on crucible around, type of heating is a side heat.The crucible platform of existing polycrystalline silicon ingot or purifying furnace is that top surface and lower surface all are the uniform structures of planar thickness, and crucible is positioned on the described crucible platform.Side heat body and thermal insulator along crucible shaft when moving up, the heat of silicon melt is simultaneously downwards and transmits to the side in the crucible.When heat transmits, arrive the crucible platform, when the crucible land thickness is even downwards, produce uniformly transfer heat, at this moment, produce gradient owing to the lateral radiative transfer of crucible causes the temperature of ingot casting margin and center, core temperature height and at the bottom of the lip temperature forms to recessed solid-liquid interface.Adopt the polycrystalline silicon ingot casting of the crucible platform formation of existing polycrystalline silicon ingot or purifying furnace can occur more crystalline lateral growth at last.
The utility model content
Technical problem to be solved in the utility model provides a kind of crucible platform of polycrystalline silicon ingot or purifying furnace, under the side heat mode, can suppress crucible platform center and the unbalanced situation of peripheral temperature effectively, the isothermal surface that guarantees crucible bottom is the plane, thereby the solid-liquid interface can guarantee crystal growth effectively the time is level and can forms orthotropic column crystal when guaranteeing polycrystalline silicon ingot casting.
It is two dimensional structure that the utility model provides the top of the crucible platform of polycrystalline silicon ingot or purifying furnace, crucible is positioned on the top surface of described crucible platform, heating member and thermal insulator are positioned over around the side of described crucible, described crucible platform bottom is a bowl configurations, the bottom centre that is centered close to described crucible platform of described bowl configurations, the bottom margin of the edge of described bowl configurations and the described crucible platform segment distance of being separated by, the thickness of described crucible platform increases gradually from the edge of the past described bowl configurations in center of described bowl configurations, the increased value gradually of described crucible land thickness satisfies the downward rate of heat release make described crucible bottom successively decreases and can offset the side direction rate of heat release of the described crucible bottom that past edge increases progressively from the center from the center toward edge, makes the interior silicon liquid solid-liquid interface maintenance level when ingot casting of described crucible.
Further be improved to, the bottom margin of described crucible platform and the edge of described bowl configurations all are that the edge of square or the bottom margin of described crucible platform and described bowl configurations all be a circle, described bowl configurations be one spherical, described bowl configurations be a circular arc along the center elevation cross-sectional view; Described bowl configurations has following size relationship: D=k
1L, R=k
1 2L
2/ 8k
2H+k
1H/2, the foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations or circular diameter, L is described crucible platform is formed or circular diameter, top that H is described crucible platform and thickness, the k at bottom margin place
1Be constant, the k relevant between 0～1 with the crystalline growth velocity of thermal conductivity described crucible platform and setting
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.
Further be improved to k
1Value be 0.5～0.9; k
2Value be 0.2～0.9.
Further be improved to k
1Value be 0.6～0.7; k
2Value be 0.5～0.8.
Further be improved to, the bottom margin of described crucible platform and the edge of described bowl configurations all are that the edge of square or the bottom margin of described crucible platform and described bowl configurations all be a circle, described bowl configurations be a pit of forming by the discretize step, described bowl configurations with spherical profile be a curve of forming by the discretize step along the center elevation cross-sectional view with circular arc profile; Described bowl configurations has following size relationship: D=k
1L, R=k
1 2L
2/ 8k
2H+k
1H/2, the foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations or circular diameter, L is described crucible platform is formed or circular diameter, top that H is described crucible platform and thickness, the k at bottom margin place
1Be constant, the k relevant between 0～1 with the crystalline growth velocity of thermal conductivity described crucible platform and setting
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.
Further be improved to k
1Value be 0.5～0.9; k
2Value be 0.2～0.9.
Further be improved to k
1Value be 0.6～0.7; k
2Value be 0.5～0.8.
Further be improved to, the quantity of the discretize step of described bowl configurations is more than 5.
Crucible platform of the present utility model can effectively suppress platform center and the unbalanced situation of peripheral temperature, in whole crystal growing process, the temperature error of margin and center that can keep crucible bottom is in 2 ℃, the isothermal surface that has guaranteed crucible bottom is the plane, therefore, solid-liquid interface when having guaranteed crystal growth effectively is a level, thereby can form orthotropic column crystal when guaranteeing polycrystalline silicon ingot casting.
Description of drawings
Below in conjunction with the drawings and specific embodiments the utility model is described in further detail:
Fig. 1 be the utility model embodiment one or two crucible platforms along the center elevation cross-sectional view;
Fig. 2 is the upward view of the utility model embodiment one crucible platform;
Fig. 3 is the upward view of the utility model embodiment two crucible platforms;
Fig. 4 be the utility model embodiment three or four crucible platforms along the center elevation cross-sectional view;
Fig. 5 is the upward view of the utility model embodiment three crucible platforms;
Fig. 6 is the upward view of the utility model embodiment four crucible platforms.
Embodiment
As shown in Figure 1, be the utility model embodiment one or two crucible platforms along the center elevation cross-sectional view; Be the upward view of the utility model embodiment one crucible platform as shown in Figure 2; Be the upward view of the utility model embodiment two crucible platforms as shown in Figure 3.The top of the crucible platform of the utility model embodiment one or two polycrystalline silicon ingot or purifying furnace is a two dimensional structure, crucible is positioned on the top surface of described crucible platform, heating member and thermal insulator are positioned over around the side of described crucible, described crucible platform bottom is a bowl configurations, the bottom margin of the edge of the bottom centre that is centered close to described crucible platform of described bowl configurations, described bowl configurations and the described crucible platform segment distance of being separated by; As shown in Figure 2, the edge of the bottom margin of the described crucible platform of the utility model embodiment one and described bowl configurations all is a square; As shown in Figure 3, the edge of the bottom margin of the described crucible platform of the utility model embodiment two and described bowl configurations all is circular; As shown in Figure 1, the described bowl configurations of the utility model embodiment one or two described crucible platform be one spherical, described bowl configurations be a circular arc along the center elevation cross-sectional view; Described bowl configurations have following size relationship a: D=k
1L, R=k
1 2L
2/ 8k
2H+k
1H/2, the foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations among the utility model embodiment one, L is described crucible platform is formed, D is the diameter of the circle formed of the diameter of the circle formed of the edge of described bowl configurations, bottom margin that L is described crucible platform among the utility model embodiment two, H is the thickness at the top and the bottom margin place of described crucible platform among the utility model embodiment one or two, k among the utility model embodiment one or two
1Be the relevant constant of crystalline growth velocity between 0～1 and thermal conductivity described crucible platform and setting, k among the utility model embodiment one or two
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.k
1Preferred values be 0.5～0.9, optimal selection is 0.6～0.7; k
2Preferred values be 0.2～0.9, optimal selection is 0.5～0.8.Edge toward described bowl configurations increases the thickness that described bowl configurations makes described crucible platform gradually from the center of described bowl configurations, and the increased value gradually of described crucible land thickness satisfies the downward rate of heat release make described crucible bottom successively decreases and can offset the side direction rate of heat release of the described crucible bottom that past edge increases progressively from the center from the center toward edge, makes the interior silicon liquid solid-liquid interface maintenance level when ingot casting of described crucible.
As shown in Figure 4, be the utility model embodiment three or four crucible platforms along the center elevation cross-sectional view; Fig. 5 is the upward view of the utility model embodiment three crucible platforms; Fig. 6 is the upward view of the utility model embodiment four crucible platforms.The utility model embodiment three or four and the utility model embodiment one or two difference be described bowl configurations be a pit of forming by the discretize step, described bowl configurations with spherical profile be a curve of forming by the discretize step along the center elevation cross-sectional view with circular arc profile.As shown in Figure 5, the edge of the bottom margin of the described crucible platform of the utility model embodiment three and described bowl configurations all is a square; As shown in Figure 6, the edge of the bottom margin of the described crucible platform of the utility model embodiment four and described bowl configurations all is circular.The described bowl configurations of the utility model embodiment three or four crucible platform have following size relationship a: D=k
1L, R=k
1 2L
2/ 8k
2H+k
1H/2, the foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations among the utility model embodiment three, L is described crucible platform is formed, D is the diameter of the circle formed of the diameter of the circle formed of the edge of described bowl configurations, bottom margin that L is described crucible platform among the utility model embodiment four, H is the thickness at the top and the bottom margin place of described crucible platform among the utility model embodiment three or four, k among the utility model embodiment three or four
1Be the relevant constant of crystalline growth velocity between 0～1 and thermal conductivity described crucible platform and setting, k among the utility model embodiment three or four
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.k
1Preferred values be 0.5～0.9, optimal selection is 0.6～0.7; k
2Preferred values be 0.2～0.9, optimal selection is 0.5～0.8.The quantity of the discretize step of bowl configurations described in the utility model embodiment three or four is more than 5.Edge toward described bowl configurations increases the thickness that described bowl configurations makes described crucible platform gradually from the center of described bowl configurations, and the increased value gradually of described crucible land thickness satisfies the downward rate of heat release make described crucible bottom successively decreases and can offset the side direction rate of heat release of the described crucible bottom that past edge increases progressively from the center from the center toward edge, makes the interior silicon liquid solid-liquid interface maintenance level when ingot casting of described crucible.
A better embodiment of the utility model embodiment three crucible platforms is that the value of each parameter is respectively: L=960 centimetre, and H=160 centimetre, k
1=0.618, k
2=0.618, and calculating can get D=593 centimetre, R=494 centimetre respectively.Add man-hour, carry out discretize processing, get 6 steps, promptly the quantity of the discretize step of described bowl configurations is 6.
It is as follows to adopt the utility model embodiment three better embodiment crucible platforms to carry out the growth method of polycrystalline silicon ingot casting, places the peripheral length of side and be 870 centimetres square crucible on the top surface of described crucible platform, in adorn 450 kilograms of polycrystalline silicon materials; Heating, after the fusing of silicon material, the beginning crystallization; The side heat body of described polycrystalline silicon ingot or purifying furnace and thermal insulator are moved up with per hour 10 millimeters～20 millimeters speed, and simultaneously, the temperature of the central point of a crucible bottom and 240 centimetres of distance centers, 400 centimeters was measured at every interval in four hours.Thermometric adopts infrared thermometer.In order to carry out infrared measurement of temperature, be drilled with thermometer hole in crucible platform bottom, so that infrared thermometer can measure the temperature of crucible bottom different positions from the bottom.
Concrete measuring result is as shown in table 1, as can be seen from Table 1, adopt the described crucible platform of the utility model embodiment three better embodiment, suppressed the unbalanced situation of crucible bottom platform center and peripheral temperature effectively, in whole crystal growing process, the temperature error of margin and center that can keep crucible bottom is in 2 ℃, the isothermal surface that has guaranteed crucible bottom is the plane, therefore, solid-liquid interface when having guaranteed crystal growth effectively is a level, thereby can form orthotropic column crystal when guaranteeing polycrystalline silicon ingot casting, adopt the longitudinal profile of the polycrystalline silicon ingot casting of the utility model embodiment three better embodiment crucible platforms formation to compare with the polycrystalline silicon ingot casting that prior art forms, the polycrystalline silicon ingot casting that the utility model embodiment three better embodiment crucible platforms form can significantly reduce the crystalline lateral growth, forms column crystal preferably.
Table 1
A better embodiment of the utility model embodiment four crucible platforms is that the value of each parameter is respectively: L=1060 centimetre, and H=180 centimetre, k
1=0.66, k
2=0.7, and calculating can get D=699 centimetre, R=4545 centimetre respectively.Add man-hour, carry out discretize processing, get 8 steps, promptly the quantity of the discretize step of described bowl configurations is 8.
It is as follows to adopt the utility model embodiment four better embodiment crucible platforms to carry out the growth method of polycrystalline silicon ingot casting, places the peripheral length of side and be 900 centimetres circular crucible on the top surface of described crucible platform, in adorn 560 kilograms of polycrystalline silicon materials; Heating, after the fusing of silicon material, the beginning crystallization; The side heat body of described polycrystalline silicon ingot or purifying furnace and thermal insulator are moved up with per hour 10 millimeters～20 millimeters speed, and simultaneously, the temperature of the central point of a crucible bottom and 240 centimetres of distance centers, 480 centimeters was measured at every interval in four hours.Thermometric adopts infrared thermometer.In order to carry out infrared measurement of temperature, be drilled with thermometer hole in crucible platform bottom, so that infrared thermometer can measure the temperature of crucible bottom different positions from the bottom.Concrete measuring result is as shown in table 2:
Table 2
As can be seen from Table 2, adopt the described crucible platform of the utility model embodiment four better embodiment, suppressed the unbalanced situation of crucible platform center and peripheral temperature effectively, in whole crystal growing process, the temperature error of margin and center that can keep crucible bottom is in 2 ℃, and the isothermal surface that has guaranteed crucible bottom is the plane, therefore, solid-liquid interface when having guaranteed crystal growth effectively is a level, thereby can form orthotropic column crystal when guaranteeing polycrystalline silicon ingot casting.
More than by specific embodiment the utility model is had been described in detail, formation is to restriction of the present utility model but these are not.Under the situation that does not break away from the utility model principle, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection domain of the present utility model.
Claims (8)
1. the crucible platform of a polycrystalline silicon ingot or purifying furnace, the top of crucible platform is a two dimensional structure, crucible is positioned on the top surface of described crucible platform, heating member and thermal insulator are positioned over around the side of described crucible, it is characterized in that: described crucible platform bottom is a bowl configurations, the bottom centre that is centered close to described crucible platform of described bowl configurations, the bottom margin of the edge of described bowl configurations and the described crucible platform segment distance of being separated by, the thickness of described crucible platform increases gradually from the edge of the past described bowl configurations in center of described bowl configurations, the increased value gradually of described crucible land thickness satisfies the downward rate of heat release make described crucible bottom successively decreases and can offset the side direction rate of heat release of the described crucible bottom that past edge increases progressively from the center from the center toward edge, makes the interior silicon liquid solid-liquid interface maintenance level when ingot casting of described crucible.
2. the crucible platform of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that: the bottom margin of described crucible platform and the edge of described bowl configurations all are that the edge of square or the bottom margin of described crucible platform and described bowl configurations all be a circle, described bowl configurations be one spherical, described bowl configurations be a circular arc along the center elevation cross-sectional view; Described bowl configurations has following size relationship: D=k
1L,
The foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations or circular diameter, L is described crucible platform is formed or circular diameter, top that H is described crucible platform and thickness, the k at bottom margin place
1Be constant, the k relevant between 0～1 with the crystalline growth velocity of thermal conductivity described crucible platform and setting
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.
3. as the crucible platform of polycrystalline silicon ingot or purifying furnace as described in the claim 2, it is characterized in that: k
1Value be 0.5～0.9; k
2Value be 0.2～0.9.
4. as the crucible platform of polycrystalline silicon ingot or purifying furnace as described in the claim 2, it is characterized in that: k
1Value be 0.6～0.7; k
2Value be 0.5～0.8.
5. the crucible platform of polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterized in that: the bottom margin of described crucible platform and the edge of described bowl configurations all are that the edge of square or the bottom margin of described crucible platform and described bowl configurations all be a circle, described bowl configurations be a pit of forming by the discretize step, described bowl configurations with spherical profile be a curve of forming by the discretize step along the center elevation cross-sectional view with circular arc profile; Described bowl configurations has following size relationship: D=k
1L,
The foursquare length of side that the bottom margin that wherein D is the foursquare length of side formed of the edge of described bowl configurations or circular diameter, L is described crucible platform is formed or circular diameter, top that H is described crucible platform and thickness, the k at bottom margin place
1Be constant, the k relevant between 0～1 with the crystalline growth velocity of thermal conductivity described crucible platform and setting
2Be the relevant constant of the relative size with described crucible platform and described crucible between 0～1, R is described domed radius.
6. as the crucible platform of polycrystalline silicon ingot or purifying furnace as described in the claim 5, it is characterized in that: k
1Value be 0.5～0.9; k
2Value be 0.2～0.9.
7. as the crucible platform of polycrystalline silicon ingot or purifying furnace as described in the claim 5, it is characterized in that: k
1Value be 0.6～0.7; k
2Value be 0.5～0.8.
8. as the crucible platform of polycrystalline silicon ingot or purifying furnace as described in the claim 5, it is characterized in that: the quantity of the discretize step of described bowl configurations is more than 5.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206194313U CN201971923U (en) | 2010-11-23 | 2010-11-23 | Crucible platform of polycrystalline silicon ingot furnace |
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| CN2010206194313U CN201971923U (en) | 2010-11-23 | 2010-11-23 | Crucible platform of polycrystalline silicon ingot furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477581A (en) * | 2010-11-23 | 2012-05-30 | 上海普罗新能源有限公司 | Crucible platform for polycrystalline silicon ingot casting furnace |
| CN110923803A (en) * | 2019-12-25 | 2020-03-27 | 南京晶升能源设备有限公司 | Semiconductor silicon material consumable material growth furnace and silicon material preparation method |
-
2010
- 2010-11-23 CN CN2010206194313U patent/CN201971923U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477581A (en) * | 2010-11-23 | 2012-05-30 | 上海普罗新能源有限公司 | Crucible platform for polycrystalline silicon ingot casting furnace |
| CN110923803A (en) * | 2019-12-25 | 2020-03-27 | 南京晶升能源设备有限公司 | Semiconductor silicon material consumable material growth furnace and silicon material preparation method |
| CN110923803B (en) * | 2019-12-25 | 2023-11-10 | 南京晶升装备股份有限公司 | Semiconductor silicon material consumable growth furnace and silicon material preparation method |
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Granted publication date: 20110914 Termination date: 20131123 |