CN201990760U - Lifting device of flow guide cylinder in single crystal furnace - Google Patents
Lifting device of flow guide cylinder in single crystal furnace Download PDFInfo
- Publication number
- CN201990760U CN201990760U CN2010205571923U CN201020557192U CN201990760U CN 201990760 U CN201990760 U CN 201990760U CN 2010205571923 U CN2010205571923 U CN 2010205571923U CN 201020557192 U CN201020557192 U CN 201020557192U CN 201990760 U CN201990760 U CN 201990760U
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- flow guide
- guide cylinder
- silicon
- furnace
- guide shell
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Abstract
The utility model relates to a lifting device of a flow guide cylinder in a single crystal furnace. Three hanging hooks are arranged on the flow guide cylinder, a lifting hook with three lifting buttons is utilized, and the upper portion of the lifting hook is formed into seed crystal sizes and is provided with a pin hole. In use, the lift hook is installed at the position of a counter weight lower port for assembling seed crystals, and the pin is inserted. After loading materials, the flow guide cylinder is firstly arranged in the middle of a lower furnace drum which is provided with a support, an upper furnace drum and a furnace cover are moved to above the lower furnace drum, the counter weight is drooped to the position of the flow guide cylinder, the lifting buttons are respectively connected with the lifting hooks, then the counter weight is lifted, the flow guide cylinder is broken away from the lower furnace drum, the support is removed, and an upper furnace cover and the upper furnace drum are covered (the flow guide cylinder cannot contact materials). When silicon materials are added into the furnace, the silicon materials are solid. When the silicon materials are stacked in the furnace, a plurality of interspaces are formed. The density of silicon solids is different from the density of silicon liquids, therefore after the silicon materials are heated to melt, the volume of silicon liquids are just about half of the volume of silicon solids. At that moment, the flow guide cylinder is drooped and the flow guide cylinder is in matched connection with a thermal protection cover, thus a next operation process can be processed.
Description
Affiliated technical field:
The utility model relates to a kind of utility appliance that is used to make the solar energy level silicon single crystal body, particularly relates to a kind of utility appliance that is used for straight pulling silicon single crystal furnace
The utility model relates to a kind of heat-preserving equipment that is used for straight pulling silicon single crystal furnace, particularly relates to a kind of insulation cover edges of boards mouth of single crystal growing furnace.
Background technology:
The major part of silicon single-crystal is with cutting krousky (Czochralski) manufactured.In this method, polysilicon is put into quartz crucible, heat fused then, will melt silicon and lower the temperature slightly, give certain condensate depression, the silicon single crystal of a particular crystal orientation (seed crystal) is contacted with melt silicon, and the speed that temperature by adjusting melt and seed crystal upwards promote is got rid of when growing up to aimed dia after the dislocation seed crystal necking down, improve pulling speed, make the permanent growth in thickness of single crystal.In the last stage of process of growth, the interior silicon melt not completely dissolve as yet of crucible this moment, by the heat supplied that increases the crystalline pulling speed and regulate crystal diameter is reduced to form a tail shape cone gradually to crucible, when whole enough hour of the point of cone, crystal will break away from melt, thereby finishes the crystalline process of growth.The diameter silicon monocrystalline roughly is divided into so several stages during fabrication: the dress polycrystal, find time, growth, equal diameter growth, afterbody crystal growth, the crystal of unmelted polycrystalline silicon, crystalline substance and shoulder cool off.In the process of dress polycrystal and since when loading the excessive height of material or down between insulation cover and the quartz crucible distance too near, cause guide shell when placing, to contact with material in the crucible, can't normally settle graphite piece, influence ordinary production.
Summary of the invention:
The utility model utilizes one three suspension hooks of withholding are arranged with three hooks are installed on the guide shell, and the seed crystal thickness is made on suspension hook top, and is provided with lock-joint.During use suspension hook is installed on the weight end opening seed crystal place is installed, plug pin.After charged, earlier guide shell is put in (stove tube middle position) on the following stove tube that is provided with bracing frame, upper furnace tube, bell are moved to down stove tube top, weight falls to the guide shell place, to withhold respectively with hook and be connected, the back rises weight, makes the following stove tube of guide shell disengaging, remove bracing frame, cover bell and upper furnace tube (noticing that guide shell can not touch material) respectively.Because the silicon material is a solid state when adding in the stove, be stacked on and have a lot of spaces in the stove, and because the solid and the density of liquid difference of silicon, the silicon material melts after heating, when only feeding intake when becoming liquid state about half of volume, at this moment fall guide shell, guide shell and insulation cover plate are connected, can carry out next step operation sequence.Utilization of the present utility model increases the distance between the silicon material in guide shell and the stove, and comparable existing single crystal growing furnace is added the silicon material about 10%, has improved the charging capacity of every heat, has the advantages that also reduced production cost when increasing output.Solved because solid and the density of liquid difference of silicon, and be stacked on and have a lot of spaces in the crucible, the silicon material thawing of heating back, the shortcoming when only feeding intake when becoming liquid state about half of volume.
The lifting device of guide shell in the designed single crystal growing furnace of the utility model, mainly comprise body of heater, body of heater is provided with the insulation cover plate, is connected with guide shell on the insulation cover plate, guide shell is connected with insulation cover plate clearance fit, is connected with the lifting device that moves up and down guide shell on the guide shell.Described lifting device be on the guide shell hook and weight on suspension hook.This apparatus structure is simple, but good result of use is arranged, when reinforced, promote guide shell by lifting device, increase the distance between the silicon material in guide shell and the stove, thereby comparable existing single crystal growing furnace is added the silicon material about 10%, because the silicon material is a solid state when adding in the stove, be stacked on and have a lot of spaces in the stove, and the silicon material melts after heating, when only feeding intake when becoming liquid state about half of volume, at this moment fall guide shell, guide shell and insulation cover plate are connected, can carry out next step operation sequence.This thermal field of single crystal furnace charging device has improved the charging capacity of every heat, has the advantages that also reduced production cost when increasing output.
The utility model increases the distance between the silicon material in guide shell and the stove, and comparable existing single crystal growing furnace is added the silicon material about 10%, has improved the charging capacity of every heat, has the advantages that also reduced production cost when increasing output.
Description of drawings:
Below in conjunction with drawings and Examples the utility model is further specified.
Accompanying drawing 1 is the main sectional view of the utility model structural representation;
Accompanying drawing 2 is stainless steel suspension rod plan view and vertical views of the utility model suspension hook;
Accompanying drawing 3 is stainless steel arm plan view and vertical views of the utility model suspension hook.
Accompanying drawing 4 is the utility model hook plan view and vertical view
Accompanying drawing 5 is the utility model hook nut plan view and vertical view
Accompanying drawing 6 is the utility model hook screw plan view and vertical view
1 is stay-warm case in the accompanying drawing, the 2nd, and following insulation cover plate, 2-1 is a groove, the 3rd, guide shell, the 4th, inner wall of quartz crucible, the 5th, the plumbago crucible outside, the 6th, crystal bar.
Embodiment:
Present embodiment mainly comprises stay-warm case (1), and following insulation cover plate (2) equals a stay-warm case outer radius design downward groove (2-1) being incubated cover plate down, will go up stay-warm case (1) and entangle, and interface is tight.In the brilliant process of crystal bar (6) one-tenth, air communication is crossed guide shell (3), and along inner wall of quartz crucible (4) upwards, a part is along under plumbago crucible (5) lateral, and is downward along last stay-warm case (1) inwall behind insulation cover (2) lower surface under the part process behind the process liquid level.It is tighter to descend insulation cover plate (2) to connect with last stay-warm case (1) like this, and oxide compound can't overflow, and has improved air flow line, improves heat insulation effect, reduces the pollution of oxide compound.
Claims (3)
1. the lifting device of guide shell in the single crystal growing furnace, form by body of heater etc., it is characterized in that body of heater is provided with the insulation cover plate, be connected with guide shell on the insulation cover plate, guide shell is connected with insulation cover plate clearance fit, is connected with the lifting device that moves up and down guide shell on the guide shell; Three hooks are installed.
2. the lifting device of guide shell in the single crystal growing furnace according to claim 1, it is characterized in that described lifting device be on the guide shell hook and weight on suspension hook.
3. the lifting device of guide shell in the single crystal growing furnace according to claim 1 is characterized in that suspension hook top makes the seed crystal thickness, and is provided with lock-joint.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205571923U CN201990760U (en) | 2010-10-09 | 2010-10-09 | Lifting device of flow guide cylinder in single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205571923U CN201990760U (en) | 2010-10-09 | 2010-10-09 | Lifting device of flow guide cylinder in single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201990760U true CN201990760U (en) | 2011-09-28 |
Family
ID=44667254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205571923U Expired - Fee Related CN201990760U (en) | 2010-10-09 | 2010-10-09 | Lifting device of flow guide cylinder in single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201990760U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
| CN112301418A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Thermal field structure suitable for increasing feeding amount of large-size single crystal |
-
2010
- 2010-10-09 CN CN2010205571923U patent/CN201990760U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112301418A (en) * | 2019-07-31 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Thermal field structure suitable for increasing feeding amount of large-size single crystal |
| CN112301418B (en) * | 2019-07-31 | 2023-06-16 | 内蒙古中环光伏材料有限公司 | Thermal field structure suitable for large-size single crystal to increase feeding amount |
| CN110923810A (en) * | 2019-12-11 | 2020-03-27 | 包头美科硅能源有限公司 | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110928 Termination date: 20121009 |