CN202450183U - Secondary feeder for single crystal furnace - Google Patents
Secondary feeder for single crystal furnace Download PDFInfo
- Publication number
- CN202450183U CN202450183U CN2011204572961U CN201120457296U CN202450183U CN 202450183 U CN202450183 U CN 202450183U CN 2011204572961 U CN2011204572961 U CN 2011204572961U CN 201120457296 U CN201120457296 U CN 201120457296U CN 202450183 U CN202450183 U CN 202450183U
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- Prior art keywords
- single crystal
- casing drum
- crystal growing
- growing furnace
- ring flange
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Abstract
A secondary feeder for a single crystal furnace comprises a feeding drum, a flange is arranged at one end of the feeding drum, a feeding inlet is arranged on the flange, the other end of the feeding drum is in a taper shape, a movable center rod is arranged at the center of the flange, one end of the center rod is connected with an inserting head, the other end of the center rod is connected with a tapered hammer, the bottom of the hammer and the tapered bottom of the feeding drum are closed, the diameter of the tapered bottom of the feeding drum is smaller than that of tapered bottom of the hammer, the feeding inlet of the single crystal furnace is provided with a baffle ring, and the flange is placed on the baffle ring. According to the secondary feeder, utilization rate of a quartz crucible (phi 22 inch) is greatly improved, energy, argon and time are saved, and cost is reduced.
Description
Technical field
The utility model relates to a kind of single crystal growing furnace secondary charging device.
Background technology
Leading product as the photovoltaic industry; Crystal silicon solar energy battery has occupied 90% of the market share; Wherein the transformation efficiency of single crystal silicon solar cell is higher, thus large diameter silicon monocrystal rod (e.g.: Φ 8 inch) market demand is very big, but its production cost is higher.For example, in the Czochralski method mono-crystal furnace thermal field structure, owing to receive the restriction of graphite heater height and plumbago crucible lower limit; If want quartz crucible (Φ 22 inch; The quartz crucible same specification that occurs in the back literary composition) single dress silicon material amount surpasses 110kg, is not easy to realize, so the monocrystalline that draws out is shorter; Output is lower, thereby production cost is higher.
The utility model content
Its purpose of the utility model just is to provide a kind of single crystal growing furnace secondary charging device, has improved the utilization ratio of quartz crucible (Φ 22 inch) widely, has the characteristics of saves energy, argon gas and time, thereby has reduced cost.
The technical scheme that realizes above-mentioned purpose and take comprises casing drum, and casing drum one end is provided with ring flange; Ring flange is provided with dog-house, and the casing drum the other end is taper, and described ring flange center is provided with movably centibar; Centibar one end connects insert head, and the other end connects the taper weight, and described weight bottom is closed with the casing drum conical lower portion; Casing drum tapered bottom diameter is less than weight tapered bottom diameter, and the single crystal growing furnace charging opening is provided with baffle ring, and described ring flange places on the baffle ring.
Compared with prior art, the beneficial effect of the utility model is, owing to utilize again feeding device to increase the utilization ratio that charging capacity can improve quartz crucible greatly, saves energy, argon gas and time, thus cost reduced.
Description of drawings
Below in conjunction with accompanying drawing the utility model is done further to detail.
Fig. 1 is this apparatus structure synoptic diagram.
Embodiment
This device comprises casing drum 3, and is as shown in Figure 1, and casing drum 3 one ends are provided with ring flange 2; Ring flange 2 is provided with dog-house, and casing drum 3 the other ends are taper, and described ring flange 2 centers are provided with movably centibar 4; Centibar 4 one ends connect insert head 1, and the other end connects taper weight 5, and described weight 5 bottoms and casing drum 3 conical lower portion are closed; Casing drum 3 tapered bottom diameters are less than weight 5 tapered bottom diameters, and the single crystal growing furnace charging opening is provided with baffle ring, and described ring flange 2 places on the baffle ring.
Be provided with sleeve pipe 7 outside the described centibar 4, sleeve pipe 7 one ends are provided with set collar 6, and set collar 6 connects casing drums 3 through pole 8.
On the centibar 4 between insert head 1 and the ring flange 2, be provided with pin.
Described sleeve pipe 7 is provided with support bar 9 and connects casing drum 3.
Described dog-house is provided with 2-4.
1 charging
Put on the PE gloves before the charging with ethanol (C
2H
5OH) carefully clean the inside and outside surface and the taper weight of feeding device, then that it is vertical, (4 circular holes evenly drop into the 20 ~ 30kg of diameter≤20mm) from the device top ready particle again.
2. go into stove
With the seed crystal shape interconnecting piece of the upper end of the feeding device again seed chuck of packing into, insert the fixing feeding device again of molybdenum pin, with ethanol clear outer surface and taper weight bottom, pin that brilliant liter is fast to be risen button and make it slowly get into secondary furnace chamber, closing, secondary furnace chamber is found time, air guide.
3 feed intake
Treat that silicon material bottom fusing in the quartz crucible collapses behind the material, open crucible and change rotating speed 0.5r/min.
Observation has or not hangs the limit, has then not rise the crucible position, does not have the crucible position of then rising and makes bottom and the fusing of middle part silicon material faster (high-temperature zone is at the middle part of graphite heater).It is not molten that the bath surface center keeps a panel region, and power is reduced to 40 ~ 50KW, crucible potential drop to lower limit.Feeding device again begins to descend; When its flange by the baffle ring at the thin neck of stove tube place (need spot welding) when blocking (like Fig. 2) continue to descend; This moment, the taper weight separated with barrel, and the silicon material slides from crack at once and falls into (like Fig. 3) in the crucible, treated after the complete landing of silicon material at once that again feeding device rises to secondary furnace chamber; This moment volume power to change material power (90 ~ 100KW), close flap valve and fill out secondary furnace chamber and take out feeding device again.If having part silicon material still to rest in the barrel when reinforced does not fall, promotes wirerope immediately it is mentioned a segment distance, fall.Utilize baffle ring pier twice, with vibrations silicon material.As still do not fall, just rising in the secondary furnace chamber, take out the cooling back.As in the barrel during residual a little silicon material, disclose down the silicon material with stainless steel bar after, just continue again reinforced operation as also feeding in raw material.
4 change material and crystal pulling
Behind the silicon material fine melt, power is dropped to seeding power, treat to carry out the crystal pulling operation behind the temperature-stable.
5 experimental results
We do too much stove experiment with aforesaid method, and following table is an experimental data.
Can know by experimental data:
Average charge is 139.76kg, and average yield rate is 85.89%, and total cost is: 8.35+5.37=13.72 yuan/sheet, also low with the high yield gained total cost of budget: 14.32-13.72=0.6 unit/sheet.Therefore, obvious: under the prerequisite that keeps as possible than high yield, charge is many more, and cost is low more.
6 conclusions
In sum, utilize again feeding device to increase the utilization ratio that charging capacity can improve quartz crucible greatly, saves energy, argon gas and time, thus reduced cost.Therefore, the widespread use of feeding device improves production capacity and reduces cost significant silicon single-crystal again.
Claims (5)
1. a single crystal growing furnace secondary charging device is characterized in that, comprises casing drum (3); Casing drum (3) one ends are provided with ring flange (2), and ring flange (2) is provided with dog-house, and casing drum (3) the other end is taper; Described ring flange (2) center is provided with movably centibar (4), and centibar (4) one ends connect insert head (1), and the other end connects taper weight (5); Described weight (5) bottom is closed with casing drum (3) conical lower portion; Casing drum (3) tapered bottom diameter is less than weight (5) tapered bottom diameter, and the single crystal growing furnace charging opening is provided with baffle ring, and described ring flange (2) places on the baffle ring.
2. the described a kind of single crystal growing furnace secondary charging device of root a tree name claim 1 is characterized in that, described centibar (4) is outer to be provided with sleeve pipe (7), and sleeve pipe (7) one ends are provided with set collar (6), and set collar (6) connects casing drum (3) through pole (8).
3. root a tree name claim 1 or 2 described a kind of single crystal growing furnace secondary charging devices is characterized in that, on the centibar (4) between insert head (1) and the ring flange (2), are provided with pin.
4. root a tree name claim 1 or 2 described a kind of single crystal growing furnace secondary charging devices is characterized in that described sleeve pipe (7) is provided with support bar (9) and connects casing drum (3).
5. the described a kind of single crystal growing furnace secondary charging device of root a tree name claim 1 is characterized in that, described dog-house is provided with 2-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204572961U CN202450183U (en) | 2011-11-17 | 2011-11-17 | Secondary feeder for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204572961U CN202450183U (en) | 2011-11-17 | 2011-11-17 | Secondary feeder for single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202450183U true CN202450183U (en) | 2012-09-26 |
Family
ID=46866063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204572961U Expired - Fee Related CN202450183U (en) | 2011-11-17 | 2011-11-17 | Secondary feeder for single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202450183U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
| CN107653488A (en) * | 2017-08-22 | 2018-02-02 | 东海县奥博石英制品有限公司 | A kind of quartzy casing drum that charging is repeated for single crystal growing furnace |
| CN115467020A (en) * | 2022-08-22 | 2022-12-13 | 包头美科硅能源有限公司 | Feeding method for effectively inhibiting silicon jumping caused by silicon splashing of particles |
| CN115467013A (en) * | 2022-08-22 | 2022-12-13 | 包头美科硅能源有限公司 | Method for increasing feeding amount of granular silicon in crystal pulling production |
-
2011
- 2011-11-17 CN CN2011204572961U patent/CN202450183U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420806A (en) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | Single crystal furnace secondary charging system and charging method thereof |
| CN105420806B (en) * | 2015-12-25 | 2018-04-03 | 安徽华芯半导体有限公司 | A kind of single crystal growing furnace secondary charging system |
| CN107653488A (en) * | 2017-08-22 | 2018-02-02 | 东海县奥博石英制品有限公司 | A kind of quartzy casing drum that charging is repeated for single crystal growing furnace |
| CN115467020A (en) * | 2022-08-22 | 2022-12-13 | 包头美科硅能源有限公司 | Feeding method for effectively inhibiting silicon jumping caused by silicon splashing of particles |
| CN115467013A (en) * | 2022-08-22 | 2022-12-13 | 包头美科硅能源有限公司 | Method for increasing feeding amount of granular silicon in crystal pulling production |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120926 Termination date: 20201117 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |